CN104460157A - 阵列基板及显示装置 - Google Patents

阵列基板及显示装置 Download PDF

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CN104460157A
CN104460157A CN201410799551.9A CN201410799551A CN104460157A CN 104460157 A CN104460157 A CN 104460157A CN 201410799551 A CN201410799551 A CN 201410799551A CN 104460157 A CN104460157 A CN 104460157A
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display device
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CN104460157B (zh
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占伟
申智渊
杜海波
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TCL Huaxing Photoelectric Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to PCT/CN2015/071060 priority patent/WO2016095313A1/zh
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    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
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Abstract

本发明公开了一种阵列基板及显示装置，属于显示技术领域，解决了现有的in-cell技术中，阵列基板的制造过程过于复杂的技术问题。该阵列基板包括若干个像素单元，每个像素单元中设置有TFT，TFT的LTPS下方设置有遮光层；阵列基板还包括若干公共电极和若干寻址线；公共电极用于为相应的像素单元提供公共电压，也用于产生触控信号；寻址线与相应的公共电极连接，且寻址线与遮光层位于同一图层。本发明可用于手机、平板电脑等电子设备。

Description

阵列基板及显示装置
技术领域
本发明涉及显示技术领域，具体地说，涉及一种阵列基板及显示装置。
背景技术
随着显示技术的发展，液晶显示器已经成为最为常见的显示装置。
另一方面，随着智能电子产品的普及，电容式触控屏也被广泛的应用于手机、平板电脑等各种电子产品中。目前较为多见的电容式触控屏有OGS(One glasssolution)、on-cell和in-cell三种技术。其中，in-cell技术由于其制作工艺上的优势，相比OGS技术和on-cell技术，具有更加轻薄、透光性更好、结构更加稳定等优点。
本发明人在实现本发明的过程中发现，现有技术至少存在以下技术问题：采用in-cell技术的液晶显示器中，至少需要增设寻址线及相应的绝缘层等结构。在阵列基板的制造过程中，需要增加至少一次构图工艺(Photo Engraving Process，简称PEP)，因此现有技术存在阵列基板的制造过程过于复杂的技术问题。
发明内容
本发明的目的在于提供一种阵列基板及显示装置，以解决现有的in-cell技术中，阵列基板的制造过程过于复杂的技术问题。
本发明提供一种阵列基板，包括若干个像素单元，每个所述像素单元中设置有薄膜晶体管(Thin Film Transistor，简称TFT)，所述薄膜晶体管的低温多晶硅(Low Temperature Poly-Silicon，简称LTPS)下方设置有遮光层；
所述阵列基板还包括若干公共电极和若干寻址线；
所述公共电极用于为相应的像素单元提供公共电压，也用于产生触控信号；
所述寻址线与相应的公共电极连接，且所述寻址线与所述遮光层位于同一图层。
进一步的是，所述寻址线的侧边设置有凸出部，所述公共电极与所述寻址线的凸出部连接。
进一步的是，该阵列基板还包括若干扫描线和若干数据线。
优选的是，所述寻址线位于所述数据线的正下方。
或者，所述寻址线位于所述扫描线的正下方。
优选的是，所述寻址线为金属材料。
进一步的是，所述薄膜晶体管为顶栅型薄膜晶体管。
优选的是，一个所述公共电极对应一个或多个所述像素单元。
本发明还提供一种显示装置，包括彩膜基板和上述的阵列基板。
进一步的是，所述显示装置为边缘场开关型(Fringe Field Switching，简称FFS)液晶显示器。
本发明带来了以下有益效果：一般采用LTPS的薄膜晶体管大多是顶栅型薄膜晶体管，为了防止薄膜晶体管的沟道区域在受到背光源的光照情况下出现光生电流的问题，通常会在LTPS下方设置遮光层(Light Shielding Layer)。
本发明提供的阵列基板中，将用于传输触控信号的寻址线与用于遮光的遮光层设置在同一图层。在阵列基板的制造过程中，寻址线和遮光层可以在同一次构图工艺中同步形成，从而不需要单独为了形成寻址线增加构图工艺的次数，简化了阵列基板的制造过程。
本发明的其它特征和优点将在随后的说明书中阐述，并且，部分地从说明书中变得显而易见，或者通过实施本发明而了解。本发明的目的和其他优点可通过在说明书、权利要求书以及附图中所特别指出的结构来实现和获得。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要的附图做简单的介绍：
图1是本发明实施例提供的阵列基板的平面示意图；
图2是图1中沿A-A线的剖面示意图；
图3是本发明实施例提供的阵列基板的另一种实施方式的平面示意图。
具体实施方式
以下将结合附图及实施例来详细说明本发明的实施方式，借此对本发明如何应用技术手段来解决技术问题，并达成技术效果的实现过程能充分理解并据以实施。需要说明的是，只要不构成冲突，本发明中的各个实施例以及各实施例中的各个特征可以相互结合，所形成的技术方案均在本发明的保护范围之内。
如图1和图2所示，本发明实施例提供一种阵列基板，该阵列基板中包括若干个像素单元，每个像素单元中设置有薄膜晶体管1及像素电极2。
本实施例中的薄膜晶体管为采用LTPS的顶栅型薄膜晶体管。栅极101位于LTPS 102上方，且栅极101与LTPS 102之间设置有绝缘层32。栅极101上方设置有绝缘层33，源极103和漏极104设置于绝缘层33上，并且源极103和漏极104通过过孔41与LTPS 102连接。像素电极2与漏极104之间通过贯穿绝缘层34、35的过孔42连接。
LTPS 102下方还设置有遮光层51，遮光层51与LTPS 102之间设置有绝缘层31。遮光层51用于为LTPS 102遮光，防止薄膜晶体管的沟道区域在受到背光源的光照情况下出现光生电流的问题。
本发明实施例提供的阵列基板中还包括若干公共电极6和若干寻址线52，寻址线52与相应的公共电极6之间通过贯穿绝缘层31、32、33、34的过孔43连接。
该阵列基板在应用中可采用显示与触控分时扫描：在显示图像时，公共电极6为相应的像素单元提供公共电压，使公共电极6与像素电极2之间形成电场，并且一个公共电极6可以对应一个或多个像素单元；在触控扫描时，公共电极6作为触控传感器，用于产生触控信号。
本实施例中，寻址线52与遮光层51位于同一图层。寻址线52和遮光层51优选为金属材料，从而既能保证遮光层51的遮光效果，又能保证寻址线52传输触控信号时的可靠性。
寻址线52与遮光层51位于同一图层，所以在本发明实施例提供的阵列基板的制造过程中，寻址线52和遮光层51可以在同一次构图工艺中同步形成，从而不需要单独为了形成寻址线52增加构图工艺的次数，简化了阵列基板的制造过程。
另外，由于本实施例相比于现有技术减少了构图工艺的次数，因此也使阵列基板成品的表面更加平坦，降低了由此造成斑纹(mura)的风险，从而提高了产品的良品率。
本发明实施例提供的阵列基板中还包括若干扫描线7和若干数据线8。作为一个优选方案，寻址线52位于数据线8的正下方，使寻址线52的正投影与数据线8基本重合。当然，寻址线52与数据线8的宽度可以稍有不同。这样可以使寻址线52和数据线8被彩膜基板上的同一条黑矩阵遮挡，而不会因为寻址线52影响液晶显示器整体的开口率。
如图3所示，在本发明实施例提供的阵列基板的另一种实施方式中，寻址线52位于扫描线7的正下方，使寻址线52的正投影与扫描线7基本重合。当然，寻址线52与扫描线7的宽度也可以稍有不同。在此种实施方式中，可以使寻址线52和扫描线7被彩膜基板上的同一条黑矩阵遮挡，而不会因为寻址线52影响液晶显示器整体的开口率。
进一步的是，寻址线52的侧边设置有凸出部53，过孔43设置于凸出部53处，使公共电极6与寻址线52的凸出部53连接。应当说明的是，虽然凸出部53延伸在寻址线52的主体之外，并且占用了像素单元的开口区域，但是由于凸出部53的面积非常小，而且数量也很少，所以几乎不会影响液晶显示器整体的开口率。
本发明实施例还提供一种显示装置，可以是手机、平板电脑等具有触控功能的显示装置，并且采用in-cell技术实现触控电路。该显示装置包括彩膜基板和上述本发明实施例提供的阵列基板。
该显示装置优选为边缘场开关型(Fringe Field Switching，简称FFS)液晶显示器。其核心技术特性描述为：通过同一平面内狭缝状像素电极电极边缘所产生的电场，使狭缝状电极间以及电极正上方的所有取向液晶分子都能够产生平面旋转，从而提高了液晶层的透光效率。FFS技术可以提高液晶显示器的画面品质，具有高分辨率、高透过率、低功耗、宽视角、高开口率、低色差、无挤压水波纹等优点。
本发明实施例提供的显示装置与上述本发明实施例提供的阵列基板，具有相同的技术特征，所以也能解决相同的技术问题，达到相同的技术效果。
虽然本发明所公开的实施方式如上，但所述的内容只是为了便于理解本发明而采用的实施方式，并非用以限定本发明。任何本发明所属技术领域内的技术人员，在不脱离本发明所公开的精神和范围的前提下，可以在实施的形式上及细节上作任何的修改与变化，但本发明的专利保护范围，仍须以所附的权利要求书所界定的范围为准。

Claims (10)

1.一种阵列基板，包括若干个像素单元，每个所述像素单元中设置有薄膜晶体管，所述薄膜晶体管的低温多晶硅下方设置有遮光层；
所述阵列基板还包括若干公共电极和若干寻址线；
所述公共电极用于为相应的像素单元提供公共电压，也用于产生触控信号；
所述寻址线与相应的公共电极连接，且所述寻址线与所述遮光层位于同一图层。
2.如权利要求1所述的阵列基板，其特征在于，所述寻址线的侧边设置有凸出部，所述公共电极与所述寻址线的凸出部连接。
3.如权利要求1所述的阵列基板，其特征在于，还包括若干扫描线和若干数据线。
4.如权利要求3所述的阵列基板，其特征在于，所述寻址线位于所述数据线的正下方。
5.如权利要求3所述的阵列基板，其特征在于，所述寻址线位于所述扫描线的正下方。
6.如权利要求1所述的阵列基板，其特征在于，所述寻址线为金属材料。
7.如权利要求1所述的阵列基板，其特征在于，所述薄膜晶体管为顶栅型薄膜晶体管。
8.如权利要求1所述的阵列基板，其特征在于，一个所述公共电极对应一个或多个所述像素单元。
9.一种显示装置，包括彩膜基板和如权利要求1至8任一项所述的阵列基板。
10.如权利要求9所述的显示装置，其特征在于，所述显示装置为边缘场开关型液晶显示器。
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