CN101819362B - Tft-lcd阵列基板制造方法 - Google Patents
Tft-lcd阵列基板制造方法 Download PDFInfo
- Publication number
- CN101819362B CN101819362B CN 200910078642 CN200910078642A CN101819362B CN 101819362 B CN101819362 B CN 101819362B CN 200910078642 CN200910078642 CN 200910078642 CN 200910078642 A CN200910078642 A CN 200910078642A CN 101819362 B CN101819362 B CN 101819362B
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- Prior art keywords
- photoresist
- tft
- pixel electrode
- metallic film
- data line
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- 238000000034 method Methods 0.000 title claims abstract description 52
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 239000010409 thin film Substances 0.000 title abstract description 15
- 239000004973 liquid crystal related substance Substances 0.000 title abstract 2
- 239000000203 mixture Substances 0.000 claims abstract description 93
- 238000002161 passivation Methods 0.000 claims abstract description 42
- 238000000151 deposition Methods 0.000 claims abstract description 15
- 229920002120 photoresistant polymer Polymers 0.000 claims description 146
- 238000005516 engineering process Methods 0.000 claims description 102
- 230000004888 barrier function Effects 0.000 claims description 64
- 238000005530 etching Methods 0.000 claims description 34
- 239000004065 semiconductor Substances 0.000 claims description 27
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 17
- 238000002207 thermal evaporation Methods 0.000 claims description 17
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- 239000010408 film Substances 0.000 abstract description 110
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- 229910052751 metal Inorganic materials 0.000 abstract description 15
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- 239000012528 membrane Substances 0.000 description 18
- 238000010586 diagram Methods 0.000 description 16
- 230000002950 deficient Effects 0.000 description 7
- 239000007788 liquid Substances 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 230000035939 shock Effects 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200910078642 CN101819362B (zh) | 2009-02-27 | 2009-02-27 | Tft-lcd阵列基板制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200910078642 CN101819362B (zh) | 2009-02-27 | 2009-02-27 | Tft-lcd阵列基板制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101819362A CN101819362A (zh) | 2010-09-01 |
CN101819362B true CN101819362B (zh) | 2011-12-28 |
Family
ID=42654511
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 200910078642 Expired - Fee Related CN101819362B (zh) | 2009-02-27 | 2009-02-27 | Tft-lcd阵列基板制造方法 |
Country Status (1)
Country | Link |
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CN (1) | CN101819362B (zh) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102468243B (zh) * | 2010-11-11 | 2014-06-11 | 北京京东方光电科技有限公司 | Tft阵列基板、制造方法及液晶显示装置 |
CN103226272B (zh) * | 2013-04-16 | 2015-07-22 | 合肥京东方光电科技有限公司 | 一种阵列基板及其制备方法、显示装置 |
CN103346159B (zh) * | 2013-06-28 | 2016-08-31 | 北京京东方光电科技有限公司 | 一种阵列基板及其制造方法、显示装置 |
CN104157609B (zh) | 2014-08-20 | 2017-11-10 | 深圳市华星光电技术有限公司 | Tft基板的制作方法及其结构 |
CN104808381A (zh) * | 2015-04-28 | 2015-07-29 | 厦门天马微电子有限公司 | 显示面板及显示装置 |
KR20170115133A (ko) * | 2016-04-04 | 2017-10-17 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
WO2018082003A1 (en) * | 2016-11-04 | 2018-05-11 | Boe Technology Group Co., Ltd. | Display substrate, liquid crystal display panel and fabricating method thereof, and liquid crystal display apparatus |
CN106646975A (zh) * | 2017-01-03 | 2017-05-10 | 京东方科技集团股份有限公司 | 一种显示面板、显示装置及显示面板的制作方法 |
WO2019041337A1 (en) | 2017-09-04 | 2019-03-07 | Boe Technology Group Co., Ltd. | DISPLAY SUBSTRATE AND DISPLAY APPARATUS |
US10720454B2 (en) | 2018-06-05 | 2020-07-21 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Manufacturing method for array substrate and liquid crystal display device |
CN108803168B (zh) * | 2018-06-05 | 2020-03-31 | 深圳市华星光电半导体显示技术有限公司 | 一种阵列基板及其制作方法、液晶显示装置 |
CN110806653A (zh) * | 2019-10-29 | 2020-02-18 | 深圳市华星光电半导体显示技术有限公司 | 液晶显示面板及液晶显示装置 |
CN111061105A (zh) * | 2019-12-31 | 2020-04-24 | 深圳市华星光电半导体显示技术有限公司 | 一种显示面板及其显示装置 |
CN112130416B (zh) * | 2020-10-19 | 2024-02-13 | 北京京东方技术开发有限公司 | 一种光刻材料、显示基板及其制作方法、显示面板 |
CN114908317A (zh) * | 2022-06-29 | 2022-08-16 | 芜湖长信科技股份有限公司 | 一种tft-lcd金属边框处理工艺 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1677206A (zh) * | 2004-03-30 | 2005-10-05 | Lg.菲利浦Lcd株式会社 | 液晶显示器件 |
CN1963602A (zh) * | 2005-11-09 | 2007-05-16 | Lg.菲利浦Lcd株式会社 | 液晶显示器件及其驱动方法 |
CN101126874A (zh) * | 2006-08-16 | 2008-02-20 | 三星电子株式会社 | 具有浮动电极的液晶显示面板 |
CN101149542A (zh) * | 2006-09-22 | 2008-03-26 | 北京京东方光电科技有限公司 | 一种彩膜在薄膜晶体管之上的液晶显示器件及其制造方法 |
-
2009
- 2009-02-27 CN CN 200910078642 patent/CN101819362B/zh not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1677206A (zh) * | 2004-03-30 | 2005-10-05 | Lg.菲利浦Lcd株式会社 | 液晶显示器件 |
CN1963602A (zh) * | 2005-11-09 | 2007-05-16 | Lg.菲利浦Lcd株式会社 | 液晶显示器件及其驱动方法 |
CN101126874A (zh) * | 2006-08-16 | 2008-02-20 | 三星电子株式会社 | 具有浮动电极的液晶显示面板 |
CN101149542A (zh) * | 2006-09-22 | 2008-03-26 | 北京京东方光电科技有限公司 | 一种彩膜在薄膜晶体管之上的液晶显示器件及其制造方法 |
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Publication number | Publication date |
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CN101819362A (zh) | 2010-09-01 |
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Owner name: JINGDONGFANG SCIENCE AND TECHNOLOGY GROUP CO., LTD Free format text: FORMER OWNER: BEIJING BOE PHOTOELECTRICITY SCIENCE + TECHNOLOGY CO., LTD. Effective date: 20141202 Owner name: BEIJING BOE PHOTOELECTRICITY SCIENCE + TECHNOLOGY Effective date: 20141202 |
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Free format text: CORRECT: ADDRESS; FROM: 100176 DAXING, BEIJING TO: 100015 CHAOYANG, BEIJING |
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Effective date of registration: 20141202 Address after: 100015 Jiuxianqiao Road, Beijing, No. 10, No. Patentee after: BOE Technology Group Co., Ltd. Patentee after: Beijing BOE Photoelectricity Science & Technology Co., Ltd. Address before: 100176 Beijing economic and Technological Development Zone, West Central Road, No. 8 Patentee before: Beijing BOE Photoelectricity Science & Technology Co., Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111228 Termination date: 20210227 |