CN101687716A - 制造敷金属构件的方法、相关构件以及在敷金属过程中用于放置构件的支架 - Google Patents
制造敷金属构件的方法、相关构件以及在敷金属过程中用于放置构件的支架 Download PDFInfo
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Abstract
如果在具有用陶瓷制成的本体的构件中要在该本体上同时在至少两个相对和/或相邻的侧面上实施敷金属,则此本体的堆叠是很困难的。按本发明,用于敷金属的金属以膏或箔或片的形式敷设在陶瓷体的用于敷金属的表面上,在金属与陶瓷材料接合之前,先把至少一个构件放置在支架上并从而构成堆垛,此支架事先至少在支架体的一侧在用于贴靠到所述至少一个构件上的表面上设有分隔层。在敷金属之后将所述至少一个构件从支架上取下。
Description
技术领域
本发明涉及一种用于制造至少一个具有陶瓷体的构件的方法,此陶瓷体在其表面的至少一个区域中覆有敷金属;本发明还涉及一种按这种方法制成的构件;本发明还涉及一种在敷金属过程中用于放置该构件的支架。
背景技术
从DE 10 2004 056 879 A1中已知一种用于制造板状的、双面敷金属的铜瓷基板的方法。在直接覆铜法(Direct CopperBonding-Verfahren)中,待敷金属的陶瓷体的至少一个金属层位于支架的陶瓷分隔层上,构件堆叠在此支架上。
发明内容
本发明的目的是,介绍一种方法,陶瓷构件的至少一个本体借助此方法能够同时在至少两个相对和/或相邻的侧面上得到敷金属。
在方法方面,此目的借助权利要求1的特征得以实现;在设备方面,该目的借助权利要求32的特征得以实现;并且该目的通过按权利要求46所述的构件得以实现。在从属的权利要求中介绍了本发明的有利构造方案。
在按本发明的用于制造至少一个具有陶瓷体的构件的方法中,此陶瓷体应当在至少两个相对和/或相邻的侧面上覆有敷金属,其中立体地构造陶瓷体,将用于敷金属的金属以膏或箔或片的形式敷设在陶瓷体的用于敷金属的表面上。
在金属与陶瓷材料接合之前把构件放置在支架上。此支架的支架体至少在与所述至少一个构件的用于敷金属的表面贴靠的表面上覆有分隔层。对于立体构造的陶瓷体而言,此方法可同时对至少两个相对和/或相邻的表面进行敷金属。
构件和支架构成堆垛。为了对多个陶瓷体同时进行敷金属,可把多个堆垛相叠成堆垛装置。堆垛装置由至少两个堆垛构成。在堆垛装置中相叠的陶瓷体之间分别***了一个起隔板作用的支架,此支架具有两侧的分隔层,因此支架的分隔层和陶瓷体的覆有敷金属的表面是彼此重叠的。
在将堆垛相叠地放置后,为敷金属而实施热处理。优选的方法是直接覆铜法(DCB法)或活性金属钎焊法(AMB法)。在敷金属之后将构件从支架上取下。
为了放置构件应用了支架,它的支架体由莫来石、ZrO2、Al2O3、AIN、Si3N4、SiC制成或由至少两种上述成份的混合物制成。此支架具有很高的抗热性并且足够稳定,因而也可以实现具有多个构件的堆垛。
为了放置构件,还可应用支架,它的支架体由耐高温的金属如合金钢、钼、钛、钨制成,或由至少两种上述成份的混合物或合金制成。支架在此也具有很高的抗热性并且足够稳定,因而也可以实现具有多个构件的堆垛。
支架体上的分隔层作为多孔层由莫来石、Al2O3、TiO2、ZrO2、MgO、CaO、CaCO3制成,或由至少两种上述成份的混合物制成,或由在制造过程中应用了这些成份的材料制成。
分隔层以≤20mm的厚度并以≥10%的多孔度(孔隙体积与固体材料体积的比例)敷设在支架体上。有利的是,所提到的材料不与用于敷金属的金属接合。通过分隔层的厚度和多孔度确保了在热负荷时分隔层不会破裂或剥落。
支架体以0.2mm至30mm的厚度制成。制造在与构件的大小和质量相一致的情况下进行,因此可确保稳定性,尤其确保在堆叠多个构件时的稳定性。
通过使用支架来避免敷金属表面的不平或敷金属的扭曲,对于此支架而言,与理想的平坦表面的偏差小于支架长度的0.4%并且/或者小于支架宽度的0.2%。
为了形成分隔层,支架的支架体的至少一侧的表面上覆有合成物(Masse),此合成物在液态或含水的基体中含有至少一种粉末形式的分隔层材料。在对构成分隔层的覆层进行敷设后,把此覆层加热到高于100℃的温度以实现干燥和/或去除接合介质。
把构成分隔层的覆层即设有此覆层的支架加热到高于150℃但低于分隔层的材料的烧结温度的温度。
此分隔层由粒度≤70μm的粉末状材料构成。因此确保了,敷金属的表面是相应光滑的。
支架体的材料的热膨胀系数可与构件的热膨胀系数相同或不同地选取。支架体的材料的热膨胀系数可与具有敷金属的构件的热膨胀系数不同,并可比放置的构件的陶瓷材料的热膨胀系数大或小近似10%地选取。
支架体的材料应该具有数量级约为6.7×10-6/K的热膨胀系数。
敷金属可例如由纯的或技术等级方面的钨、银、金、铜、铂、钯、镍、铝或钢构成,或由至少两种不同金属的混合物构成。敷金属例如也可额外或单独地由反应焊料、软焊料或硬焊料构成。
敷金属优选利用铜板或铜箔按已知的DCB方法来进行。
在至少一个堆垛的顶面上可放置加重体,此加重体的本体可由支架的材料构成,其中此本体在处于敷金属上的表面上设有分隔层。因此,尤其在由多个堆垛相叠构成的堆垛装置中会有这样的压力施加在用于敷金属的片材或箔层上,使得这些堆垛以完全的接触贴靠在陶瓷体的有待敷金属的表面上,因此在敷金属时不会出现不足之处。
为了构成堆垛装置,堆垛可分别相叠并在支架之间放置间隔保持器。因此可相叠地放置任意多个堆垛。
此外,通过支架的这种结构性构造,还可对堆垛进行不同的布置,堆垛甚至可在堆垛装置之内相互分开。
为了同时地按不同的方法例如按DCB方法和AMB方法进行敷金属,可把至少两个堆垛分别安放在一个至少局部由支架限界的空间内。此空间由放在各支架上的板或其它的支架封闭。由于堆垛在空间上被分隔开来,所以可同时在一个堆垛装置中实施不同的方法。
对于钵状、盆状或沟槽状的支架而言,多个堆垛可相互堆成一个堆垛装置,其中支架的各个底面位于下方支架的侧壁上并且将钵、盆或沟槽用位于其内的构件盖住。因此有利的是,支架同时构成反应腔,敷金属在此反应腔中进行。
通过堆垛的这种布置和/或支架的这种构造性结构及其布置方案,热处理及惰性气体的加载可分别与各个堆垛相匹配。
支架体的表面和/或支架体上的分隔层可在全面地或局部面地或以就此的组合的方式构造。此结构可由间隔的凹槽或凹陷或沟槽构成,也能以格栅状的形状形成,分隔层、放置面通过它被分成面积较小的区域。因此减小了放置面,因而也减小了与分隔层的接触。因此可影响用于敷金属的气体的进入以及构件的加热和冷却。
构件的本体由陶瓷材料构成,它可在它的组成成份方面来与所需的性能如绝缘性、局部放电稳定性和热稳定性协调。
陶瓷材料包括主要成份和辅助成分,主要成分是50.1Gew-%至100Gew-%的ZrO2/HfO2或50.1Gew-%至100Gew-%的Al2O3或50.1Gew-%至100Gew-%的AIN或50.1Gew-%至100Gew-%的Si3N4或50.1Gew-%至100Gew-%的BeO或50.1Gew-%至100Gew-%的SiC或在所给份额范围内任意组合的至少两种主要成份的组合物,辅助成分由≤49.9Gew-%份额的在至少一个氧化阶段中的元素Ca、Sr、Si、Mg、B、Y、Sc、Ce、Cu、Zn、Pb和/或复合物单独地形成或者在所给份额范围内以任意组合的方式形成。此主要成份和辅助成份在去除≤3Gew-%的污物的情况下能以任意组合的方式相互组合成100Gew-%的总成分。
由于可达到的热负荷能力和良好的敷金属性,这种组成的材料尤其适合制造构件。
依照敷金属层的功能,敷金属层以0.05mm至2mm的厚度敷设。在此,敷金属层的厚度与构件的高度的比例可设定为小于2。
敷金属层也可以不同的厚度敷设。因此依照敷金属层的功能,例如可在构件的陶瓷体的一个侧面上敷上不同于在相对面和/或相邻面上的厚度。
构件在二维投影中成像的最小尺寸最少大于80μm×80μm。不在二维投影中成像的最小高度大于80μm。
由陶瓷构成的构件的本体优选是热沉器。热沉器理解成一种本体,此本体上具有电子或电气零件或线路,此本体这样成型,即它把在零件或线路中产生的热量传导出来,从而不会出现对零件或线路有害的过热。陶瓷体由这样一种材料构成,此材料是不导电的或几乎不导电的,并具有良好的传热性。
陶瓷体是一体的并具有热量排出或引导元件,用于保护电气零件或线路。陶瓷体优选是电路板,而这些零件是可用加热或冷却介质来加载的钻孔、通道、肋和/或缺口。此介质可以是液态或气态的。陶瓷体和它的冷却元件优选由至少一个陶瓷元件构成,或由不同的陶瓷材料的复合物构成。
附图说明
借助实施例详细地阐述了本发明。其中:
图1示出由两个堆垛和加重体构成的堆垛装置;
图2示出由具有板状支架的两个堆垛构成的堆垛装置;
图3示出由具有沟槽状支架的两个堆垛构成的堆垛装置;以及
图4示出由两个堆垛构成的堆垛装置,这两个堆垛具有槽状支架和造型不同的构件。
具体实施方式
图1示出了按本发明的堆垛装置。首先把支架2放在此处未示出的炉子的托架装置1中,此炉子是用于实施敷金属的,此支架2在其支架体3的表面上配备了分隔层4。此支架2是角形的,因此它可容纳角形的构件5,即容纳立体构造的陶瓷体6,此陶瓷体6在其顶面和底面上应当设有敷金属7。敷金属7在角形陶瓷体6的每个侧翼上相互对称地、平面状地设置在顶面和底面上。
支架2与位于它上面的构件5构成了堆垛8。
在此构件5上放着另一支架2,它的支架体3在顶面和地面上都覆有分隔层4。此支架具有分隔板的作用。它作为分隔板把两个彼此重叠设置的构件分隔开来。在后的构件5具有与在前的构件5相同的结构并连同其支架2也同样构成了堆垛8。
这两个相互重叠的堆垛8构成了堆垛装置9。
在最上面的堆垛8上具有加重体10,它的本体11可由支架的材料构成。此本体11在贴靠在处于下方的构件5的敷金属7上的表面上设有分隔层4。加重体10的作用是,用于敷金属的箔或片以充分地接触贴靠在陶瓷体6的有待敷金属的表面上。
在图2中示出了堆垛装置的另一实施例,此堆垛装置用于实现敷金属。用相同的附图标记来表示与前述实施例相一致的特征。支架2位于此处未示出的、用于实施敷金属的炉子中,此支架2在此是板状的。支架体3在其表面上具有分隔层4。具有E形陶瓷体6的构件5位于此支架2上,该陶瓷体是热沉器。此陶瓷体6以其扁平的侧面位于支架上。这个侧面在它的整个面上都具有敷金属7。陶瓷体6的规定的散热片12在它们的端面上也同样具有敷金属7。
在上面描述的堆垛8上还放置着另一具有相同结构的堆垛8。放置在下方支架12上的间隔保持器13支承着上方的堆垛。间隔保持器13可由与支架2相同的陶瓷材料制成。上方堆垛通过盖板14遮盖。这两个相叠的堆垛8构成堆垛装置9。
如同所示的一样,上方堆垛8的陶瓷体6的得到敷金属的表面与下方陶瓷体的敷金属的表面不是一致的。此堆垛装置实现了形状相同的陶瓷体同时在不同的表面上得到敷金属。
在图3中,在堆垛装置9中上、下堆垛8的有待敷金属的构件5与按图2的实施例所述的相应堆垛的构件是相同的。只有支架2的形状与前述实施例不同。该支架2是沟槽状的,也就是说代替间隔保持器,支架自己以其侧壁和设置于侧壁上的底部构成各个反应腔。支架的底部用分隔层4覆盖。
通过支架2和间隔保持器13或通过例如以钵、盆或沟槽为形式的支架可对各个腔室进行限界,敷金属在这些腔室中进行。这些得到限界的空腔甚至可以实现在每个空腔中有区别地设定为敷金属所需的方法参数。
堆垛装置甚至可以实现在同一个工作流程中对不同形状的构件进行敷金属。借助按图4的实施例中的堆垛装置9示出了这一点。与图3的实施例相应,支架2在此也是沟槽状的。下方堆垛8与按图3的下方堆垛8相似。但与图3不同的是,分隔层4在此被如此构造,从而它通过间隔的凹陷断开。因此敷金属7的层不是全面地位于分隔层4上。在设置在它上面的堆垛8中,构件5具有完全不同的形状。在支架2中具有两个构件5,它们的陶瓷体6具有U形形状。陶瓷体6分别以一个侧翼位于分隔层4上并分别在侧翼的外侧设有敷金属7。
Claims (47)
1.用于制造至少一个具有陶瓷体的构件的方法,所述陶瓷体在其表面的至少一个区域中覆有敷金属,其特征在于,立体地构造所述陶瓷体,把用于敷金属的金属以膏或箔或片的形式敷设在所述陶瓷体的用于敷金属的表面上,在金属与陶瓷材料接合之前把至少一个构件放置在支架上并从而构成堆垛,所述支架的支架体事先至少在用于贴靠到所述至少一个构件上的表面上设有分隔层,在敷金属之后把所述至少一个构件从所述支架上取下。
2.按权利要求1所述的方法,其特征在于,在对多个构件进行敷金属时将所述构件分别放置在支架上并从而分别构成堆垛,所述堆垛被如此相叠地放置,从而构成具有至少两个堆垛的堆垛装置,然后对所述堆垛装置的构件进行敷金属。
3.按权利要求1或2所述的方法,其特征在于,为了放置所述构件而应用了具有由莫来石、ZrO2、Al2O3、AIN、Si3N4、SiC或由至少两种上述成份的混合物制成的支架体的支架。
4.按权利要求1或2所述的方法,其特征在于,为了放置所述构件而应用了具有由耐高温的金属如合金钢、钼、钛、钨或由至少两种上述成份的混合物或合金制成的支架体的支架。
5.按前述权利要求中任一项所述的方法,其特征在于,所述支架体上的分隔层作为多孔层由莫来石、Al2O3、TiO2、ZrO2、MgO、CaO、CaCO3或至少两种上述材料的混合物或由在制造过程中应用了这些成份的材料制成。
6.按前述权利要求中任一项所述的方法,其特征在于,所述分隔层以≤20mm的厚度敷设。
7.按前述权利要求中任一项所述的方法,其特征在于,所述分隔层以≥10%的多孔度(孔隙体积与固体材料体积的比例)制成。
8.按前述权利要求中任一项所述的方法,其特征在于,所述支架的支架体以0.2mm至30mm的厚度制成。
9.按前述权利要求中任一项所述的方法,其特征在于使用了一种支架,对于该支架而言,与理想的平坦表面的偏差小于支架长度的0.4%并且/或者小于支架宽度的0.2%。
10.按前述权利要求中任一项所述的方法,其特征在于,为了在所述支架的表面上形成分隔层,支架体的至少用于贴靠到构件上的表面被敷设了合成物,所述合成物在液态或含水的基体中含有至少一种粉末形式的分隔层材料。
11.按前述权利要求中任一项所述的方法,其特征在于,在敷设了构成所述分隔层的覆层之后将该覆层加热到高于100℃的温度以实现干燥和/或去除接合介质。
12.按前述权利要求中任一项所述的方法,其特征在于,把构成所述分隔层的覆层或者说设有该覆层的支架加热到高于150℃但低于所述分隔层的材料的烧结温度的温度。
13.按前述权利要求中任一项所述的方法,其特征在于,所述分隔层由粒度≤70μm的粉末状材料构成。
14.按前述权利要求中任一项所述的方法,其特征在于,至少一个支架体的材料的热膨胀系数与至少一个构件的热膨胀系数相同或不同地选取。
15.按前述权利要求中任一项所述的方法,其特征在于,构成所述支架的支架体的材料以如下的热膨胀系数制成,即该热膨胀系数与具有敷金属的构件的热膨胀系数不同并比放置的构件的陶瓷材料的热膨胀系数大或小近似10%。
16.按前述权利要求中任一项所述的方法,其特征在于,所述支架的支架体的材料以数量级约为6.7x10-6/K的热膨胀系数制成。
17.按前述权利要求中任一项所述的方法,其特征在于,所述敷金属优选利用纯的或技术等级方面的、由钨、银、金、铜、铂、钯、镍、铝或钢构成的金属进行,或利用至少两种不同金属的混合物进行,并且/或者额外或单独地利用反应焊料、软焊料或硬焊料进行。
18.按权利要求17所述的方法,其特征在于,所述敷金属利用铜板或铜箔按DCB方法进行。
19.按前述权利要求中任一项所述的方法,其特征在于,在所述堆垛装置中相叠的陶瓷体之间分别***一个起分隔板作用的、具有两侧的分隔层的支架,从而所述支架的分隔层和所述陶瓷体的具有已敷设的金属的用于敷金属的表面相互重叠。
20.按前述权利要求中任一项所述的方法,其特征在于,为了由相互叠加设置的堆垛形成堆垛装置,在支架之间安置间隔保持器。
21.按前述权利要求中任一项所述的方法,其特征在于,至少一个堆垛被安放在一个至少局部由所述支架限界的空间内,此空间由放置在所述堆垛装置上的板封闭。
22.按前述权利要求中任一项所述的方法,其特征在于,由多个堆垛钵状、盆状或沟槽状的支架相互堆叠成一个堆垛装置,其中支架的各个底面位于下方支架的侧壁上地将钵、盆或沟槽利用构件盖住。
23.按前述权利要求中任一项所述的方法,其特征在于,在至少一个堆垛的顶面上放置加重体,所述加重体的本体可由所述支架的材料构成,其中所述本体在处于敷金属上的表面上设有分隔层。
24.按前述权利要求中任一项所述的方法,其特征在于,为了同时地按不同的方法进行敷金属,把至少两个堆垛分别安放在一个至少局部由支架限界的空间内,其中此空间由放置在各堆垛上的板或其它的支架封闭。
25.按前述权利要求中任一项所述的方法,其特征在于,所述支架体的表面和/或所述支架体上的分隔层全面地或局部面地或以就此的组合的方式构造。
26.按前述权利要求中任一项所述的方法,其特征在于,所述陶瓷材料包括主要成份和至少一种辅助成份,所述主要成份是50.1Gew-%至100Gew-%的ZrO2/HfO2或50.1Gew-%至100Gew-%的Al2O3或50.1Gew-%至100Gew-%的AIN或50.1Gew-%至100Gew-%的Si3N4或50.1Gew-%至100Gew-%的BeO或50.1Gew-%至100Gew-%的SiC或在所给份额范围内任意组合的至少两种所述主要成份的组合物,所述辅助成份由≤49.9Gew-%份额的在至少一个氧化阶段中的元素Ca、Sr、Si、Mg、B、Y、Sc、Ce、Cu、Zn、Pb和/或复合物单独地形成或者在所给份额范围内以任意组合的方式形成,并且所述主要成份和所述辅助成份在去除≤3Gew-%份额的污物的情况下以任意组合的方式相互组合成100Gew-%的总成分。
27.按前述权利要求中任一项所述的方法,其特征在于,构件在二维投影中成像的最小尺寸最少大于80μmx80μm。
28.按前述权利要求中任一项所述的方法,其特征在于,不在二维投影中成像的最小高度大于80μm。
29.按前述权利要求中任一项所述的方法,其特征在于,敷金属的层在至少一个堆垛中以0.05mm至2mm的厚度敷设。
30.按前述权利要求中任一项所述的方法,其特征在于,在至少一个堆垛中,敷金属的层的厚度与构件的高度的比例被设定成小于2。
31.按前述权利要求中任一项所述的方法,其特征在于,至少一个堆垛的敷金属的层按照不同的厚度敷设。
32.用于用在至少一个具有陶瓷体(6)的构件(5)的制造中的支架,所述陶瓷体(6)在至少两个相对的侧面上覆有敷金属(7),其特征在于,所述支架(2)至少在支架体(3)一侧在表面上覆有分隔层(14),所述分隔层(14)贴靠在所述至少一个构件(5)的、用于敷金属(7)的表面上,并且所述构件(5)立体地构造。
33.按权利要求32所述的支架,其特征在于,所述支架体(3)的材料由莫来石、ZrO2、Al2O3、AIN、Si3N4、SiC或由至少两种上述成份的混合物构成。
34.按权利要求32或33所述的支架,其特征在于,所述支架体(3)上的分隔层(4)由莫来石、Al2O3、TiO2、ZrO2、MgO、CaO、CaCO3构成或由分隔层(4)的至少两种不同的材料的混合物构成或由在制造过程中应用了这些成份的材料构成。
35.按前述权利要求中任一项所述的支架,其特征在于,所述支架(2)的支架体(3)具有0.2mm至30mm的厚度。
36.按前述权利要求中任一项所述的支架,其特征在于,与支架(2)的理想的平坦表面的偏差小于支架长度的0.4%并且/或者小于支架宽度的0.2%。
37.按前述权利要求中任一项所述的支架,其特征在于,所述分隔层(4)具有≤20mm的厚度。
38.按前述权利要求中任一项所述的支架,其特征在于,构成所述分隔层(4)的颗粒具有≤70μm的尺寸。
39.按前述权利要求中任一项所述的支架,其特征在于,所述分隔层(4)在整个厚度范围内连续地具有≥10%的多孔度(孔隙体积与固体材料体积的比例)。
40.按前述权利要求中任一项所述的支架,其特征在于,所述分隔层(4)具有至少两个厚度相同或不同的区域。
41.按前述权利要求中任一项所述的支架,其特征在于,在所述支架体(3)呈钵状、盆状或沟槽状时,至少底部在内部具有分隔层(4)。
42.按前述权利要求中任一项所述的支架,其特征在于,在所述支架体(3)呈钵状、盆状或沟槽状时,侧壁在内部并且/底部在内部和/或外部具有分隔层(4)。
43.按前述权利要求中任一项所述的支架,其特征在于,所述支架体(3)的表面和/或所述支架体上的分隔层(4)全面地或局部面地或以就此的组合的方式构造(15)。
44.按前述权利要求中任一项所述的支架,其特征在于,构成所述支架体(3)的材料具有热膨胀系数,该热膨胀系数与具有敷金属(7)的构件(5)的热膨胀系数不同并比所述构件(5)的陶瓷材料的热膨胀系数大或小近似10%。
45.按前述权利要求中任一项所述的支架,其特征在于,所述支架体(3)的材料具有数量级约为6.7x10-6/K的热膨胀系数。
46.具有陶瓷体(6)的构件,所述陶瓷体在其表面的至少一个区域中覆有敷金属(7),其特征在于,所述陶瓷体立体地构造(12),陶瓷材料包含主要成份和辅助成份,所述主要成份是50.1Gew-%至100Gew-%的ZrO2/HfO2或50.1Gew-%至100Gew-%的Al2O3或50.1Gew-%至100Gew-%的AIN或50.1Gew-%至100Gew-%的Si3N4或50.1Gew-%至100Gew-%的BeO或50.1Gew-%至100Gew-%的SiC或在所给份额范围内任意组合的至少两种所述主要成份的组合物,所述辅助成份由≤49.9Gew-%份额的在至少一个氧化阶段中的元素Ca、Sr、Si、Mg、B、Y、Sc、Ce、Cu、Zn、Pb和/或复合物单独地形成或者在所给份额范围内以任意组合的方式形成,并且所述主要成份和所述辅助成份在去除≤3Gew-%份额的污物的情况下以任意组合的方式相互组合成100Gew-%的总成分。
47.按权利要求46所述的构件,其特征在于,所述陶瓷体(6)设有散热片(12)并作为热沉器构成。
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DE102007019630 | 2007-04-24 | ||
DE102007019630.1 | 2007-04-24 | ||
PCT/EP2008/054628 WO2008128947A1 (de) | 2007-04-24 | 2008-04-17 | Verfahren zur herstellung eines metallisierten bauteils, bauteil sowie einen träger zur auflage des bauteils bei der metallisierung |
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CN101687716B CN101687716B (zh) | 2013-11-13 |
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US (1) | US20100132932A1 (zh) |
EP (1) | EP2142490A1 (zh) |
JP (1) | JP5496081B2 (zh) |
KR (1) | KR101476313B1 (zh) |
CN (1) | CN101687716B (zh) |
DE (1) | DE102008001224A1 (zh) |
WO (1) | WO2008128947A1 (zh) |
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WO2007142273A1 (ja) * | 2006-06-08 | 2007-12-13 | International Business Machines Corporation | 高熱伝導で柔軟なシート |
DE102009015520A1 (de) * | 2009-04-02 | 2010-10-07 | Electrovac Ag | Metall-Keramik-Substrat |
DE102009025033A1 (de) | 2009-06-10 | 2010-12-16 | Behr Gmbh & Co. Kg | Thermoelektrische Vorrichtung und Verfahren zum Herstellen einer thermoelektrischen Vorrichtung |
DE102012102611B4 (de) * | 2012-02-15 | 2017-07-27 | Rogers Germany Gmbh | Metall-Keramik-Substrat sowie Verfahren zum Herstellen eines Metall-Keramik-Substrates |
EP3127600A4 (en) * | 2014-03-31 | 2017-04-12 | FUJIFILM Corporation | Gas separation composite and method for manufacturing same |
DE102014215377B4 (de) | 2014-08-05 | 2019-11-07 | Heraeus Deutschland GmbH & Co. KG | Verfahren zum Herstellen von doppelseitig metallisierten Keramik-Substraten |
DE102014224588B4 (de) * | 2014-12-02 | 2019-08-01 | Heraeus Deutschland GmbH & Co. KG | Verfahren zum Herstellen eines plattenförmigen metallisierten Keramik-Substrats, Träger zum Herstellen des Substrats und Verwendung des Trägers |
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US4129243A (en) * | 1975-07-30 | 1978-12-12 | General Electric Company | Double side cooled, pressure mounted semiconductor package and process for the manufacture thereof |
US4258783A (en) * | 1977-11-01 | 1981-03-31 | Borg-Warner Corporation | Boiling heat transfer surface, method of preparing same and method of boiling |
US4182412A (en) * | 1978-01-09 | 1980-01-08 | Uop Inc. | Finned heat transfer tube with porous boiling surface and method for producing same |
US4359086A (en) * | 1981-05-18 | 1982-11-16 | The Trane Company | Heat exchange surface with porous coating and subsurface cavities |
JPS58145437A (ja) * | 1982-02-24 | 1983-08-30 | 株式会社アイジー技術研究所 | 建築用断熱板の製造方法 |
JPS58223678A (ja) * | 1982-06-16 | 1983-12-26 | 株式会社日立製作所 | 金属化層を有するSiC焼結体とその製法 |
JP2548602B2 (ja) * | 1988-04-12 | 1996-10-30 | 株式会社日立製作所 | 半導体実装モジュール |
JPH0437662A (ja) * | 1990-06-01 | 1992-02-07 | Murata Mfg Co Ltd | セラミック基板と金属板の接合構造 |
US5794684A (en) * | 1996-11-08 | 1998-08-18 | Jacoby; John | Stacked fin heat sink construction and method of manufacturing the same |
JPH10284808A (ja) * | 1997-04-08 | 1998-10-23 | Denki Kagaku Kogyo Kk | 回路基板 |
JPH10286932A (ja) * | 1997-04-14 | 1998-10-27 | Dainippon Printing Co Ltd | 耐摩耗性化粧材 |
US20020000128A1 (en) * | 1999-10-15 | 2002-01-03 | Mark D. Williams | Fracture detection coating system |
DE10165107B3 (de) * | 2000-09-20 | 2015-06-18 | Hitachi Metals, Ltd. | Substrat mit Siliciumnitrid-Sinterkörper und Leiterplatte |
DE10152490A1 (de) * | 2000-11-06 | 2002-05-08 | Ceramtec Ag | Außenelektroden an piezokeramischen Vielschichtaktoren |
JP2004186665A (ja) * | 2002-10-09 | 2004-07-02 | Murata Mfg Co Ltd | 多層構造部品およびその製造方法 |
US20050126766A1 (en) * | 2003-09-16 | 2005-06-16 | Koila,Inc. | Nanostructure augmentation of surfaces for enhanced thermal transfer with improved contact |
DE102004056879B4 (de) * | 2004-10-27 | 2008-12-04 | Curamik Electronics Gmbh | Verfahren zum Herstellen eines Metall-Keramik-Substrates |
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2008
- 2008-04-17 KR KR1020097024477A patent/KR101476313B1/ko not_active IP Right Cessation
- 2008-04-17 CN CN2008800216051A patent/CN101687716B/zh not_active Expired - Fee Related
- 2008-04-17 EP EP08736301A patent/EP2142490A1/de not_active Withdrawn
- 2008-04-17 JP JP2010504632A patent/JP5496081B2/ja not_active Expired - Fee Related
- 2008-04-17 DE DE200810001224 patent/DE102008001224A1/de not_active Withdrawn
- 2008-04-17 WO PCT/EP2008/054628 patent/WO2008128947A1/de active Application Filing
- 2008-04-17 US US12/596,895 patent/US20100132932A1/en not_active Abandoned
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JP2010524736A (ja) | 2010-07-22 |
KR20100021417A (ko) | 2010-02-24 |
WO2008128947A1 (de) | 2008-10-30 |
EP2142490A1 (de) | 2010-01-13 |
CN101687716B (zh) | 2013-11-13 |
KR101476313B1 (ko) | 2014-12-24 |
DE102008001224A1 (de) | 2008-10-30 |
US20100132932A1 (en) | 2010-06-03 |
JP5496081B2 (ja) | 2014-05-21 |
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