CN101663759A - 具有改进的欧姆接触的电子器件 - Google Patents
具有改进的欧姆接触的电子器件 Download PDFInfo
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- CN101663759A CN101663759A CN200880010641A CN200880010641A CN101663759A CN 101663759 A CN101663759 A CN 101663759A CN 200880010641 A CN200880010641 A CN 200880010641A CN 200880010641 A CN200880010641 A CN 200880010641A CN 101663759 A CN101663759 A CN 101663759A
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- Prior art keywords
- metal
- barrier layer
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- lamination
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- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 7
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- 239000003574 free electron Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/452—Ohmic electrodes on AIII-BV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
Claims (25)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0754186A FR2914500B1 (fr) | 2007-03-30 | 2007-03-30 | Dispositif electronique a contact ohmique ameliore |
FR0754186 | 2007-03-30 | ||
PCT/IB2008/000788 WO2008120094A2 (en) | 2007-03-30 | 2008-03-25 | Electronic device with improved ohmic contact |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101663759A true CN101663759A (zh) | 2010-03-03 |
CN101663759B CN101663759B (zh) | 2011-09-14 |
Family
ID=38474161
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008800106418A Active CN101663759B (zh) | 2007-03-30 | 2008-03-25 | 具有改进的欧姆接触的电子器件及制造方法 |
Country Status (7)
Country | Link |
---|---|
US (2) | US7968390B2 (zh) |
EP (1) | EP2143142A2 (zh) |
JP (1) | JP2010524202A (zh) |
KR (1) | KR20090128393A (zh) |
CN (1) | CN101663759B (zh) |
FR (1) | FR2914500B1 (zh) |
WO (1) | WO2008120094A2 (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102201441A (zh) * | 2010-03-26 | 2011-09-28 | 三垦电气株式会社 | 半导体装置 |
CN102820331A (zh) * | 2011-06-10 | 2012-12-12 | 财团法人交大思源基金会 | 适用于铜制程的半导体装置 |
CN103094334A (zh) * | 2011-10-27 | 2013-05-08 | 三星电子株式会社 | 电极结构、氮化镓基半导体器件及其制造方法 |
CN104465746A (zh) * | 2014-09-28 | 2015-03-25 | 苏州能讯高能半导体有限公司 | 一种hemt器件及其制造方法 |
CN106158926A (zh) * | 2015-05-12 | 2016-11-23 | 台达电子工业股份有限公司 | 半导体装置及其制作方法 |
WO2019037116A1 (zh) * | 2017-08-25 | 2019-02-28 | 苏州晶湛半导体有限公司 | p型半导体的制造方法、增强型器件及其制造方法 |
Families Citing this family (40)
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US7915643B2 (en) | 2007-09-17 | 2011-03-29 | Transphorm Inc. | Enhancement mode gallium nitride power devices |
US8519438B2 (en) | 2008-04-23 | 2013-08-27 | Transphorm Inc. | Enhancement mode III-N HEMTs |
US8289065B2 (en) | 2008-09-23 | 2012-10-16 | Transphorm Inc. | Inductive load power switching circuits |
JP5453786B2 (ja) * | 2008-12-02 | 2014-03-26 | 日本電気株式会社 | ヘテロ接合電界効果トランジスタおよびその製造方法 |
US7898004B2 (en) | 2008-12-10 | 2011-03-01 | Transphorm Inc. | Semiconductor heterostructure diodes |
US8742459B2 (en) | 2009-05-14 | 2014-06-03 | Transphorm Inc. | High voltage III-nitride semiconductor devices |
US8390000B2 (en) | 2009-08-28 | 2013-03-05 | Transphorm Inc. | Semiconductor devices with field plates |
JP2011054809A (ja) * | 2009-09-03 | 2011-03-17 | Mitsubishi Electric Corp | 窒化物半導体装置およびその製造方法 |
US8389977B2 (en) | 2009-12-10 | 2013-03-05 | Transphorm Inc. | Reverse side engineered III-nitride devices |
US8742460B2 (en) | 2010-12-15 | 2014-06-03 | Transphorm Inc. | Transistors with isolation regions |
US8643062B2 (en) | 2011-02-02 | 2014-02-04 | Transphorm Inc. | III-N device structures and methods |
US8716141B2 (en) | 2011-03-04 | 2014-05-06 | Transphorm Inc. | Electrode configurations for semiconductor devices |
US8772842B2 (en) | 2011-03-04 | 2014-07-08 | Transphorm, Inc. | Semiconductor diodes with low reverse bias currents |
US8901604B2 (en) | 2011-09-06 | 2014-12-02 | Transphorm Inc. | Semiconductor devices with guard rings |
US9257547B2 (en) | 2011-09-13 | 2016-02-09 | Transphorm Inc. | III-N device structures having a non-insulating substrate |
US8598937B2 (en) | 2011-10-07 | 2013-12-03 | Transphorm Inc. | High power semiconductor electronic components with increased reliability |
US8569799B2 (en) * | 2011-12-20 | 2013-10-29 | Infineon Technologies Austria Ag | III-V semiconductor devices with buried contacts |
KR101883842B1 (ko) | 2011-12-26 | 2018-08-01 | 엘지이노텍 주식회사 | 발광소자 및 이를 포함하는 조명시스템 |
US9165766B2 (en) | 2012-02-03 | 2015-10-20 | Transphorm Inc. | Buffer layer structures suited for III-nitride devices with foreign substrates |
JP5750382B2 (ja) * | 2012-02-15 | 2015-07-22 | シャープ株式会社 | 窒化物半導体装置 |
US9093366B2 (en) | 2012-04-09 | 2015-07-28 | Transphorm Inc. | N-polar III-nitride transistors |
US9184275B2 (en) | 2012-06-27 | 2015-11-10 | Transphorm Inc. | Semiconductor devices with integrated hole collectors |
US8803246B2 (en) | 2012-07-16 | 2014-08-12 | Transphorm Inc. | Semiconductor electronic components with integrated current limiters |
JP6522521B2 (ja) | 2013-02-15 | 2019-05-29 | トランスフォーム インコーポレーテッド | 半導体デバイスの電極及びその製造方法 |
US9087718B2 (en) | 2013-03-13 | 2015-07-21 | Transphorm Inc. | Enhancement-mode III-nitride devices |
US9245993B2 (en) | 2013-03-15 | 2016-01-26 | Transphorm Inc. | Carbon doping semiconductor devices |
US9443938B2 (en) | 2013-07-19 | 2016-09-13 | Transphorm Inc. | III-nitride transistor including a p-type depleting layer |
JP6135487B2 (ja) * | 2013-12-09 | 2017-05-31 | 富士通株式会社 | 半導体装置及び半導体装置の製造方法 |
US9318593B2 (en) | 2014-07-21 | 2016-04-19 | Transphorm Inc. | Forming enhancement mode III-nitride devices |
US9536967B2 (en) | 2014-12-16 | 2017-01-03 | Transphorm Inc. | Recessed ohmic contacts in a III-N device |
US9536966B2 (en) | 2014-12-16 | 2017-01-03 | Transphorm Inc. | Gate structures for III-N devices |
US20170069723A1 (en) * | 2015-09-08 | 2017-03-09 | M/A-Com Technology Solutions Holdings, Inc. | Iii-nitride semiconductor structures comprising multiple spatially patterned implanted species |
JP6888013B2 (ja) | 2016-01-15 | 2021-06-16 | トランスフォーム テクノロジー,インコーポレーテッド | AL(1−x)Si(x)Oゲート絶縁体を有するエンハンスメントモードIII族窒化物デバイス |
WO2017210323A1 (en) | 2016-05-31 | 2017-12-07 | Transphorm Inc. | Iii-nitride devices including a graded depleting layer |
US10096550B2 (en) | 2017-02-21 | 2018-10-09 | Raytheon Company | Nitride structure having gold-free contact and methods for forming such structures |
US10224285B2 (en) | 2017-02-21 | 2019-03-05 | Raytheon Company | Nitride structure having gold-free contact and methods for forming such structures |
JP2021120966A (ja) * | 2018-04-27 | 2021-08-19 | ソニーセミコンダクタソリューションズ株式会社 | スイッチングトランジスタ及び半導体モジュール |
WO2020092002A1 (en) * | 2018-10-30 | 2020-05-07 | Applied Materials, Inc. | Methods for etching a structure for semiconductor applications |
CN111128709A (zh) * | 2020-01-15 | 2020-05-08 | 桂林理工大学 | 基于Cu的GaN HEMT无金欧姆接触电极的制备方法 |
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2007
- 2007-03-30 FR FR0754186A patent/FR2914500B1/fr active Active
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2008
- 2008-03-25 KR KR1020097017720A patent/KR20090128393A/ko not_active Application Discontinuation
- 2008-03-25 JP JP2010500381A patent/JP2010524202A/ja not_active Withdrawn
- 2008-03-25 EP EP08719403A patent/EP2143142A2/en not_active Withdrawn
- 2008-03-25 WO PCT/IB2008/000788 patent/WO2008120094A2/en active Application Filing
- 2008-03-25 CN CN2008800106418A patent/CN101663759B/zh active Active
-
2009
- 2009-09-22 US US12/564,119 patent/US7968390B2/en active Active
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2011
- 2011-05-16 US US13/108,944 patent/US8253170B2/en active Active
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102201441A (zh) * | 2010-03-26 | 2011-09-28 | 三垦电气株式会社 | 半导体装置 |
CN102201441B (zh) * | 2010-03-26 | 2014-06-18 | 三垦电气株式会社 | 半导体装置 |
CN102820331A (zh) * | 2011-06-10 | 2012-12-12 | 财团法人交大思源基金会 | 适用于铜制程的半导体装置 |
CN103094334A (zh) * | 2011-10-27 | 2013-05-08 | 三星电子株式会社 | 电极结构、氮化镓基半导体器件及其制造方法 |
CN104465746A (zh) * | 2014-09-28 | 2015-03-25 | 苏州能讯高能半导体有限公司 | 一种hemt器件及其制造方法 |
CN106158926A (zh) * | 2015-05-12 | 2016-11-23 | 台达电子工业股份有限公司 | 半导体装置及其制作方法 |
CN106158926B (zh) * | 2015-05-12 | 2019-05-07 | 台达电子工业股份有限公司 | 半导体装置及其制作方法 |
WO2019037116A1 (zh) * | 2017-08-25 | 2019-02-28 | 苏州晶湛半导体有限公司 | p型半导体的制造方法、增强型器件及其制造方法 |
US10916445B2 (en) | 2017-08-25 | 2021-02-09 | Enkris Semiconductor, Inc. | Method for preparing a p-type semiconductor layer, enhanced device and method for manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
KR20090128393A (ko) | 2009-12-15 |
JP2010524202A (ja) | 2010-07-15 |
WO2008120094A2 (en) | 2008-10-09 |
FR2914500A1 (fr) | 2008-10-03 |
US20110215380A1 (en) | 2011-09-08 |
CN101663759B (zh) | 2011-09-14 |
EP2143142A2 (en) | 2010-01-13 |
US7968390B2 (en) | 2011-06-28 |
US20100038682A1 (en) | 2010-02-18 |
US8253170B2 (en) | 2012-08-28 |
WO2008120094A3 (en) | 2008-12-04 |
FR2914500B1 (fr) | 2009-11-20 |
WO2008120094A9 (en) | 2009-09-17 |
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