CN101657393A - 压电陶瓷组合物和压电器件 - Google Patents
压电陶瓷组合物和压电器件 Download PDFInfo
- Publication number
- CN101657393A CN101657393A CN200880012051A CN200880012051A CN101657393A CN 101657393 A CN101657393 A CN 101657393A CN 200880012051 A CN200880012051 A CN 200880012051A CN 200880012051 A CN200880012051 A CN 200880012051A CN 101657393 A CN101657393 A CN 101657393A
- Authority
- CN
- China
- Prior art keywords
- ceramic composition
- piezoelectric ceramic
- piezoelectric
- nbt
- sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 134
- 239000000919 ceramic Substances 0.000 title claims abstract description 125
- 150000001875 compounds Chemical class 0.000 claims abstract description 42
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 34
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims abstract description 32
- 239000013078 crystal Substances 0.000 claims abstract description 7
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 6
- 239000002075 main ingredient Substances 0.000 claims description 13
- 229910052684 Cerium Inorganic materials 0.000 claims description 5
- 229910052779 Neodymium Inorganic materials 0.000 claims description 5
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 5
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 5
- 229910052746 lanthanum Inorganic materials 0.000 claims description 5
- 230000000737 periodic effect Effects 0.000 claims description 5
- 229910052747 lanthanoid Inorganic materials 0.000 abstract 2
- 150000002602 lanthanoids Chemical class 0.000 abstract 2
- 239000000463 material Substances 0.000 description 27
- 239000010936 titanium Substances 0.000 description 23
- 239000000843 powder Substances 0.000 description 19
- 239000002994 raw material Substances 0.000 description 16
- 238000004458 analytical method Methods 0.000 description 12
- 238000002441 X-ray diffraction Methods 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 9
- 239000012535 impurity Substances 0.000 description 9
- 238000004876 x-ray fluorescence Methods 0.000 description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 239000002002 slurry Substances 0.000 description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000007669 thermal treatment Methods 0.000 description 4
- 238000005303 weighing Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 230000006735 deficit Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 239000012467 final product Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000010298 pulverizing process Methods 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000008186 active pharmaceutical agent Substances 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 229910000416 bismuth oxide Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 2
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 229910000311 lanthanide oxide Inorganic materials 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000011812 mixed powder Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- MMKQUGHLEMYQSG-UHFFFAOYSA-N oxygen(2-);praseodymium(3+) Chemical compound [O-2].[O-2].[O-2].[Pr+3].[Pr+3] MMKQUGHLEMYQSG-UHFFFAOYSA-N 0.000 description 2
- UZLYXNNZYFBAQO-UHFFFAOYSA-N oxygen(2-);ytterbium(3+) Chemical compound [O-2].[O-2].[O-2].[Yb+3].[Yb+3] UZLYXNNZYFBAQO-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 229910000029 sodium carbonate Inorganic materials 0.000 description 2
- 235000017550 sodium carbonate Nutrition 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- XUKUURHRXDUEBC-SXOMAYOGSA-N (3s,5r)-7-[2-(4-fluorophenyl)-3-phenyl-4-(phenylcarbamoyl)-5-propan-2-ylpyrrol-1-yl]-3,5-dihydroxyheptanoic acid Chemical compound C=1C=CC=CC=1C1=C(C=2C=CC(F)=CC=2)N(CC[C@@H](O)C[C@H](O)CC(O)=O)C(C(C)C)=C1C(=O)NC1=CC=CC=C1 XUKUURHRXDUEBC-SXOMAYOGSA-N 0.000 description 1
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- DHKHKXVYLBGOIT-UHFFFAOYSA-N acetaldehyde Diethyl Acetal Natural products CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 1
- 125000002777 acetyl group Chemical class [H]C([H])([H])C(*)=O 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 150000001621 bismuth Chemical class 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- 238000004939 coking Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005474 detonation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000004846 x-ray emission Methods 0.000 description 1
- 229910003454 ytterbium oxide Inorganic materials 0.000 description 1
- 229940075624 ytterbium oxide Drugs 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
- C04B35/475—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on bismuth titanates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/09—Forming piezoelectric or electrostrictive materials
- H10N30/093—Forming inorganic materials
- H10N30/097—Forming inorganic materials by sintering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8561—Bismuth-based oxides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3201—Alkali metal oxides or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3213—Strontium oxides or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3215—Barium oxides or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3217—Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
- C04B2235/3225—Yttrium oxide or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
- C04B2235/3227—Lanthanum oxide or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
- C04B2235/3229—Cerium oxides or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/327—Iron group oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3275—Cobalt oxides, cobaltates or cobaltites or oxide forming salts thereof, e.g. bismuth cobaltate, zinc cobaltite
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3284—Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3418—Silicon oxide, silicic acids, or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
公开主要由含有Na、Bi、Co和Ln(镧系元素)的铋层状化合物组成的压电陶瓷组合物。还公开主要由含有Na、Bi、Ti、Co和Ln(镧系元素)并且具有由Na0.5Bi4.5Ti4O15表示的结晶相的化合物组成的压电陶瓷组合物。所述压电陶瓷组合物的特征在于,原子比满足以下关系:0<Ln/(Na+Bi+Ln)≤0.04。
Description
技术领域
本发明涉及压电陶瓷组合物和使用其的压电器件。
背景技术
目前实际使用的大部分压电陶瓷材料包含铅,以钛酸铅(PT)和锆钛酸铅(PZT)为代表。然而,含铅压电陶瓷材料引起对它们铅组分环境影响的关注。此外,含铅压电陶瓷材料具有居里点(居里温度)约200至500℃,并且在高于或等于居里点的温度下失去它们的压电性,以致难以将含铅压电陶瓷材料用于操作温度通常为500℃以上的压电陶瓷传感器。存在对于在500℃以上可用的具有更小环境影响且不损失压电性的无铅压电陶瓷的需求。
作为此类无铅压电陶瓷,已知铋层状结构铁电材料Na0.5Bi4.5Ti4O15(NBT)。(参见专利文献1和2以及非专利文献1和2。)期望铋层状结构铁电材料NBT作为在高温条件下可用的无铅压电陶瓷,这是因为以下事实:铋层状结构铁电材料NBT的居里点为约670℃,其高于PT和PZT材料的居里点。
专利文献1:日本特开专利公开No.S50-67492
专利文献2:日本特开专利公开No.H11-29356
非专利文献1:“Piezoelectricity in Ceramics of FerroelectricBismuth compound with Layer Structure”,S.Ikegami and I.Ueda,Japanese Journal of Applied Physics,13(1974),p.1572-1577非专利文献2:“Grain-Oriented and Mn-Doped(NaBi)(1-x)/2CaxBi4Ti4O15 Ceramics for Piezo-and PyrosensorMaterials”,T.Takenaka and K.Sakata,Sensor and Materials,1(1988),p.35-46
铋层状结构铁电材料Na0.5Bi4.5Ti4O15(NBT)具有高的居里点和高的耐热性,但是具有低的压电畸变常数(d33)和低的机械品质因数(Qm)。难以将铋层状结构铁电材料Na0.5Bi4.5Ti4O15(NBT)用于共振器和传感器,因为共振器和传感器要求高的压电畸变常数和高的机械品质因数。尽管已知像铋层状结构铁电材料NBT等的各向异性结晶材料的压电畸变常数能够通过将材料取向为特定结晶方向来改进,但是此类晶体取向技术要求热压处理等,以致材料的生产方法变得复杂,从而导致生产成本增加。
发明内容
已进行本发明以解决以上问题。本发明的目的在于提供压电陶瓷组合物,所述压电陶瓷组合物包含铋层状结构化合物作为主要组分,其显示良好的压电性、显著高的压电畸变常数和高的机械品质因数,并能够易于生产。本发明的目的还在于提供使用所述压电陶瓷组合物的压电器件。
根据本发明的第一方面,提供包括含有Na、Bi、Co和Ln(镧系元素)的铋层状结构化合物作为主要组分的压电陶瓷组合物,其中所述压电陶瓷组合物具有原子比为0<Ln/(Na+Bi+Ln)≤0.04。
根据本发明的第二方面,提供包括含有Na、Bi、Ti、Co和Ln(镧系元素)并具有Na0.5Bi4.5Ti4O15型晶体结构的化合物作为主要组分的压电陶瓷组合物,其中所述压电陶瓷组合物具有原子比为0<Ln/(Na+Bi+Ln)≤0.04。
优选以上压电陶瓷组合物实质上不含元素周期表的第2族元素。进一步优选以上压电陶瓷组合物包含La、Ce、Pr、Nd和Yb的至少之一作为Ln。
根据本发明的另一方面,提供压电器件,其包含在任一以上压电陶瓷组合物上设置的不同极性的电极。
附图说明
图1为根据本发明的一个实施方案的压电器件的透视图。
图2A为示出比较例的压电陶瓷组合物的X-射线衍射观察结果的图表。
图2B为示出实施例的压电陶瓷组合物的X-射线衍射观察结果的图表。
具体实施方式
以下将详细描述本发明。
本发明提供压电陶瓷组合物,所述压电陶瓷组合物含有铋层状结构化合物(特别地,铋层状结构铁电化合物Na0.5Bi4.5Ti4O15(NBT))作为主要组分,并且即使没有晶体取向,通过组成范围控制也获得高的压电畸变常数和高的机械品质因数。
更具体地,根据本发明第一实施方案的压电陶瓷组合物包括含有Na、Bi、Co和Ln(镧系元素)的铋层状结构化合物作为主要组分,其特征在于具有原子比为0<Ln/(Na+Bi+Ln)≤0.04。通过将Co添加至含Na和Bi的铋层状结构化合物的组成中,可以防止在生产压电陶瓷组合物期间杂质相与铋层状结构化合物一起生成,由此提高铋层状结构化合物的生成比率。也可以在铋层状结构化合物的晶体结构中产生畸变,并增大压电陶瓷组合物的压电畸变常数。此外,可以通过添加Ln(镧系元素)增大压电陶瓷组合物的机械品质因数。压电陶瓷组合物的机械品质因数增大的原因推测为:压电陶瓷组合物的矫顽场(coercive field)随着Ln的添加而降低,以使压电陶瓷组合物充分极化。
此外,根据本发明第二实施方案的压电陶瓷组合物包括含有Na、Bi、Ti、Co和Ln(镧系元素)并具有Na0.5Bi4.5Ti4O15型晶体结构的化合物作为主要组分,其特征在于具有原子比为0<Ln/(Na+Bi+Ln)≤0.04。通过将Co添加至铋层状结构铁电NBT化合物(Na0.5Bi4.5Ti4O15型晶体结构的化合物)的组成中,可以防止在生产压电陶瓷组合物期间杂质相与NBT化合物一起生成,由此提高NBT化合物的生成比率。也可以在NBT化合物晶体结构中产生畸变,并增大压电陶瓷组合物的压电畸变常数。进一步可以通过添加Ln(镧系元素)增大压电陶瓷组合物的机械品质因数。压电陶瓷组合物的机械品质因数增大的原因推测为:压电陶瓷组合物的矫顽场随着Ln的添加而降低,以使压电陶瓷组合物充分极化。
在仅由不含Co元素的铋层状结构铁电NBT材料形成压电陶瓷组合物的情况下,Bi4Ti3O12(BiT)的杂质相与NBT材料一起生成,以致引起NBT材料的生成比率和压电陶瓷组合物的压电畸变常数降低。在将Co元素添加至NBT材料而形成压电陶瓷组合物的情况下,不仅杂质BiT相的生成比率降低,而且由于在NBT材料的晶体结构中畸变的发生,导致压电陶瓷组合物的压电畸变常数增大。
在仅由不含Ln元素的铋层状结构铁电NBT化合物形成压电陶瓷组合物的情况下,即,在原子比Ln/(Na+Bi+Ln)为0的情况下,因为压电陶瓷组合物的高矫顽场,所以其不可能被极化。这导致压电陶瓷组合物的机械品质因数低。随着在铋层状结构铁电NBT化合物中的Ln的含量比增加,压电陶瓷组合物的矫顽场降低,使得在NBT化合物的晶体结构中发生畸变。然而,当原子比Ln/(Na+Bi+Ln)超过0.04时,NBT化合物的晶体结构变得不稳定,以致压电陶瓷组合物的压电畸变常数降低至低于20pC/N。由于烧结性劣化,导致压电陶瓷组合物还变得难以烧结。此处,当压电陶瓷组合物仅由NBT化合物形成时,压电陶瓷组合物的压电常数为约13pC/N。
因此,根据本发明第一和第二实施方案的压电陶瓷组合物(下文中仅称为本发明的压电陶瓷组合物)以以下方式来控制:Na、Bi和Ln元素的原子比落入0<Ln/(Na+Bi+Ln)≤0.04的范围内,以获得高的压电常数和高的机械品质因数。优选Na、Bi和Ln元素的原子比落入0<Ln/(Na+Bi+Ln)≤0.01的范围内,以获得比Co元素添加至NBT材料所形成的压电陶瓷组合物的压电畸变常数更高的压电畸变常数。
优选本发明的各压电陶瓷组合物包含La、Ce、Pr、Nd和Yb的至少之一作为Ln(镧系元素)。添加La、Ce、Pr、Nd和Yb的至少之一而不是其它Ln元素可使得进一步改进机械品质因数。更优选本发明的各压电陶瓷组合物包含La作为Ln,以进一步改进机械品质因数。
此外,优选本发明的各压电陶瓷组合物实质上不合元素周期表的第2族元素(即,碱土金属元素)。当压电陶瓷组合物含有第2族元素时,压电陶瓷组合物在高温条件下的压电畸变常数的劣化度可能增大。换言之,当压电陶瓷组合物实质上不含第2族元素时,压电陶瓷组合物在高温条件下的压电畸变常数的劣化能够限定至低程度。注意,在本说明书中,当压电陶瓷组合物实质上不含第2族元素时,第2族元素通过X-射线荧光分析(XRF)是检测不到的。
本发明还提供压电器件,其具有在任一以上本发明的压电陶瓷组合物上设置的不同极性的多个电极。作为压电器件的一个实例,将圆盘形压电器件200示于图1中。压电器件200具有压电陶瓷组合物的圆盘形体100(烧结体)和通过在压电陶瓷组合物体100两侧上施涂并烘焙导电性糊剂(conductive paste)而形成的导体层301和302(作为正电极和负电极)。
通过组成分析如ICP发射分析或X-射线荧光分析,能够判断压电陶瓷组合物是否落入以上规定的组成范围内。压电陶瓷组合物的X-射线荧光分析通过例如以下来进行:形成压电陶瓷组合物的烧结体,使用X-射线荧光光谱分析该烧结体并测定压电陶瓷组合物的金属构成元素Na、Bi、(Ti、)Co和Ln之间的含量比,以检验Na、Co和Ln元素的原子比是否落入0<Ln/(Na+Bi+Ln)≤0.04的范围内。压电陶瓷组合物的ICP发射分析通过例如以下来进行:使压电陶瓷组合物进行高压硫酸分解并使用ICP发射光谱分析所得分解产物。此处注意:当铋层状结构化合物为压电陶瓷组合物的主要组分时,铋层状结构化合物以最大量包含在压电陶瓷组合物中。当通过X-射线荧光分析观察到铋层状结构化合物的构成元素处于最高浓度时,由此能够判断出铋层状结构化合物作为主要组分。
接着,将给出关于本发明的压电陶瓷组合物和压电器件的生产方法的说明。
首先,制备碳酸钠、氧化铋、氧化钛、氧化钴和镧系元素氧化物(氧化镧、氧化铈、氧化镨、氧化钕和氧化镱等)的粉末作为用于铋层状结构铁电NBT化合物的金属构成元素Na、Bi、Ti、Co和Ln(镧系元素)的原料。原料粉末不是必需以以上形式制备,并能够可选择地以任何其它形式如氧化物、碳酸盐和碳氢酸盐来制备。使用的原料粉末为实质上不含有作为杂质的第2族元素的那些。
将原料粉末以作为最终产物的压电陶瓷组合物满足本发明组成范围的方式称量,添加至分散剂如乙醇中,然后通过例如球磨机进行湿法共混并粉碎。干燥如此获得的浆料以生产原料粉末混合物。
将原料粉末混合物例如在空气中在600至1100℃下煅烧10至300分钟。将煅烧的粉末混合物与有机粘结剂如聚乙烯醇或聚乙烯醇缩丁醛和分散剂如醇或醚共混,并通过例如球磨机进行湿法粉碎。干燥如此获得的浆料以生产粒状粉末材料。
将粒状粉末材料成型为期望形状的成型体。对于成型体的形状没有特别限定。该成型体能够根据需要适当地选择形状如圆盘形。该成型方法优选通过例如以下方式来进行:在约30MPa下单轴成型,接着在约150MPa下冷等静压加工(CIP)。将所得成型体例如在1050至1250℃下烧结1至10小时。
在如此获得的烧结体上通过例如以下方式形成正电极和负电极:当烧结体为圆盘形时,使该烧结体的相对的主表面进行表面研磨,通过丝网印刷等将导电性糊剂施涂至烧结体的主表面,并适当地烘焙施涂的导电性糊剂层。
作为导电性糊剂,能够使用包含导电性组分、玻璃料(glassfrit)和有机介质的那些。导电性组分的实例为贵金属如银、金、钯和铂及其合金的粉末以及这些贵金属粉末的两种以上的混合物。除了这些贵金属粉末之外,能够使用金属如铜和镍及其合金的粉末以及其混合粉末。玻璃料的实例为包含SiO2、Al2O3、ZnO和TiO2的那些。有机介质的实例为通常用于此种糊剂的那些,如醇和醚。
在其上已形成电极的烧结体随后通过在室温至约200℃下在绝缘油例如硅油中施加约3至20kV/mm的直流电压10至100分钟来极化。由此,完成该压电陶瓷组合物。压电陶瓷组合物能够通过保留其上的电极或通过从其表面去除电极来使用。
如上所述,本发明的压电陶瓷组合物包含铋层状结构化合物(特别地,铋层状结构铁电化合物Na0.5Bi4.5Ti4O15(NBT))作为主要组分,该铋层状结构化合物为一种具有更少环境影响和高耐热性但趋于显示相对低的压电畸变常数和机械品质因数的无铅压电陶瓷材料。然而,通过添加Co和Ln(镧系元素),即使没有晶体取向,本发明的压电陶瓷组合物也能够获得高的压电畸变常数和高的机械品质因数,同时保持高耐热性。这使得可以赋予压电陶瓷组合物以高耐热性和良好的压电性。
这样高耐热性和良好压电性的压电陶瓷组合物适用于各种压电器件如共振器、压电振子、致动器(actuator)、燃烧压力传感器、爆震传感器、超声波马达和压电陀螺仪传感器。
将通过参考以下实施例更详细地描述本发明。然而,应注意以下实施例仅为说明性的,并不试图将本发明限定于此。
[实验例1]
使用碳酸钠(Na2CO3)、氧化铋(Bi2O3)、氧化钛(TiO2)、氧化钴(CoO)和镧系元素氧化物(氧化镧(La2O3)、氧化铈(Ce2O3)、氧化镨(Pr2O3)、氧化钕(Nd2O3)、氧化镱(Yb2O3))的原料粉末,制备各种原料粉末混合物。在各实施例中,以形成0.967(Bi0.5Na0.48Bi4Ti4O15)-0.033CoO(其中0<Ln/(Na+Bi+Ln)≤0.04)的压电陶瓷组合物作为最终产物的方式称量原料粉末。在比较例中,以形成以下四种组合物的形式称量原料。
(1)Bi0.5Na0.5Bi4Ti4O15
(2)0.967(Bi0.5Na0.48Bi4Ti4O15)-0.033CoO
(3)Bi0.5Na0.48Bi4Ti4O15,其中La/(Na+Bi+La)=0.002
(4)Bi0.5Na0.48Bi4Ti4O15,其中La/(Na+Bi+La)=0.04
将各原料粉末混合物与乙醇共混并通过球磨机进行湿法粉碎15小时。将所得浆料放入容器中,在热水中加热,并干燥以生产原料混合粉末。将粉碎的原料在800℃下煅烧120分钟,与有机粘结剂和乙醇共混,并通过球磨机进行湿法粉碎15小时。将如此获得的浆料放入容器中以在热水中加热,并干燥以生产粒状粉末材料。
将粒状粉末材料通过在30MPa下单轴成型而成型为直径20mm和厚度3mm的圆盘形。将圆盘形成型体在150MPa下进行冷等静压加工(CIP),然后在1150℃下烧结120分钟。
随后,将该烧结体相对的主表面进行表面研磨。将由包含SiO2、Al2O3、ZnO和TiO2的玻璃料、银粉和作为有机介质的二甘醇一丁醚乙酸酯组成的银浆施涂至烧结体的主表面,并在700℃下烘焙20分钟,由此生产在圆盘形陶瓷体上形成银电极的圆盘形器件。将圆盘形器件通过在绝缘油中在150℃下施加9kV/mm的直流电压30分钟来极化。以这种方式,样品1至14的压电陶瓷器件(压电陶瓷组合物)设置有银电极。
压电器件的压电畸变常数(d33)和机械品质因数(Qm)根据EMAS-6100,使用阻抗分析仪(型号“4194A”,购自Hewlett-Packard Co.),在将压电器件静置在20℃恒温浴中的条件下测量。
为了确定压电陶瓷组合物的组成范围和结晶相,制备与用于生产压电器件的那些相同的烧结体并进行X-射线荧光分析以及通过X射线衍射的结晶相鉴定。使用“ZSX100e”(商品名,购自Rigaku Co.)进行X-射线荧光分析。使用“RU-200T”(商品名,购自Rigaku Co.)进行X-射线衍射观察。
图2示出显示样品1和3的X-射线衍射观察结果的图表。表1示出压电陶瓷组合物的X-射线荧光分析结果(原子比)和压电器件的压电畸变常数(d33)和机械品质因数(Qm)。此外,表2示出样品2、3、7、9、10和12的矫顽场值。
表1
样品编号 | 组成 | Ln元素 | Ln/(Ln+Na+Bi) | Qm | d33(pC/N) |
1* | NBT | - | 0 | 1000 | 12.9 |
2* | NBT-Co | - | 0 | 1500 | 30.0 |
3 | NBT-Co-Ln | La | 0.01 | 7000 | 32.1 |
4 | NBT-Co-Ln | La | 0.02 | 4700 | 27.3 |
5 | NBT-Co-Ln | La | 0.03 | 8000 | 23.0 |
6 | NBT-Co-Ln | La | 0.04 | 6000 | 22.0 |
7 | NBT-Co-Ln | Ce | 0.01 | 4600 | 34.5 |
8 | NBT-Co-Ln | Ce | 0.02 | 4000 | 27.7 |
9 | NBT-Co-Ln | Pr | 0.01 | 4200 | 32.0 |
10 | NB T-Co-Ln | Nd | 0.01 | 2600 | 31.5 |
11 | NBT-Co-Ln | Nd | 0.02 | 4300 | 27.2 |
12 | NBT-Co-Ln | Yb | 0.01 | 4000 | 31.3 |
13* | NBT-Ln | La | 0.002 | 2000 | 13.0 |
14* | NBT-Ln | La | 0.04 | 3000 | 15.0 |
*在本发明的范围之外
表2
样品编号 | Ln元素 | Ln/(Ln+Na+Bi) | Qm | 矫顽场(kV/mm) |
2* | - | 0 | 1500 | 5.5 |
3 | La | 0.01 | 7000 | 4.5 |
7 | Ce | 0.01 | 4600 | 4.5 |
9 | Pr | 0.01 | 4200 | 4.2 |
10 | Nd | 0.01 | 2600 | 3.8 |
12 | Yb | 0.01 | 4000 | 4.0 |
*在本发明的范围之外
如在图2的X-射线衍射观察结果中所见,在样品1(实施例)和样品3(比较例)两者中获得铋层状结构铁电NBT化合物。通过X-射线衍射观察确定在其它样品中也获得NBT化合物。通过另外的X-射线衍射观察确定样品1至14的各压电陶瓷组合物不具有晶体取向。
然而,如在图2的X-射线衍射观察结果中所见,BiT杂质相在样品1、13和14(比较例)的无Co压电陶瓷组合物中生成。此外,如表1所示,样品1、13和14的无Co压电陶瓷组合物具有压电畸变常数为15(pC/N)以下。另一方面,在样品2(比较例)和样品3至12的含Co压电陶瓷组合物中,抑制BiT杂质相的生成;如图2和表1所示,样品2至12的含Co压电陶瓷组合物具有压电畸变常数为20(pC/N)以上。
如表1所示,样品3至12(实施例)和样品13和14(比较例)的含Ln压电陶瓷组合物具有机械品质因数为2000以上。此外,如表3所见,压电陶瓷组合物的矫顽场通过添加Ln而降低。此处推测:因为矫顽场降低而使样品3至12(实施例)与样品13和14(比较例)中的压电陶瓷组合物充分极化,所以机械品质因数增大。
总之,落入本发明范围内的样品3至12的压电陶瓷组合物具有良好的压电性例如压电畸变常数为20(pC/N)以上和机械品质因数为2000以上。特别地,与仅添加Co元素的样品2中相比,压电畸变常数在Na、Bi和Ln元素的原子比在0<Ln/(Na+Bi+Ln)≤0.01范围内的样品3、7、9、10和12中更高。推测:因为通过添加Co而使杂质相(BiT)的生成受到限制,从而增加NBT化合物的生成比率,所以压电畸变常数增大,同时,通过添加Ln而在NB T化合物的晶体结构中发生畸变。此外,与以相同原子比将其它Ln元素添加至压电陶瓷组合物中的样品7、9、10和12相比,机械品质因数在将La元素作为Ln添加至压电陶瓷组合物的样品3中更高。
在600℃下热处理1小时之后,测量样品3至12的压电畸变常数和机械品质因数,以检测热处理对压电畸变常数和机械品质因数的影响。样品3至12的每一样品在热处理之前和之后的压电畸变常数几乎不变化。即,在本发明的压电陶瓷组合物和压电器件的样品中保持NBT化合物的高耐热性。
通过以上结果显示:当将预定量的Co和Ln(镧系元素)作为必要组分添加至铋层状结构铁电NBT材料时,可以兼具高的压电畸变常数和高的机械品质因数。
[实验例2]
测试实验例1的样品3的压电器件(压电陶瓷组合物)和对应于其中将第2族元素Ba和Sr添加至样品3的组成的那些的样品15和16的压电器件(压电陶瓷组合物)的居里温度(Tc)和在600℃下热处理1小时下的压电畸变常数的劣化度。
更具体地,用于样品3的原料粉末与实验例1的那些相同。在样品15和16中,以形成以下组合物作为最终产物的方式称量原料。
(1)0.967(Bi0.5Na0.48)Bi4Ti4O15-0.033CoO,其中La/(Na+Bi+La)=0.01,并且(Bi0.5Na0.48)由25摩尔%的Ba置换
(2)0.967(Bi0.5Na0.48)Bi4Ti4O15-0.033CoO,其中La/(Na+Bi+La)=0.01,并且(Bi0.5Na0.48)由25摩尔%的Sr置换
使用这些原料粉末混合物,以与实验例1相同的方式生产压电器件。
使用阻抗分析仪(型号“4194A”,购自Hewlett-Packard Co.)和电炉测量压电器件的居里温度Tc。以与实验例1相同的方式测量压电器件的初始压电畸变常数。将各样品在600℃下在空气中进行热试验1小时。其后,在将压电器件分别静置在20℃恒温浴中的条件下以相同的方式再次测量压电器件的压电畸变常数。将测量结果示于表3中。此外,样品15和16的压电陶瓷组合物分别通过X-射线荧光分析来分析并发现包含Ba和Sr组分。
表3
*在本发明的范围之外
如表3所示,Tc在添加第二族元素Ba和Sr的样品15和16(比较例)中处于低于600℃的低水平。在热试验下,样品3(实施例)的压电陶瓷组合物(压电器件)的压电畸变常数在实际使用中不导致任何问题的范围内轻度劣化。相比之下,样品15和16(比较例)的压电畸变常数在热试验下显著劣化。
通过以上结果显示:当将预定量的Co和Ln(镧系元素)作为必要组分添加至实质上不含第2族元素的铋层状结构铁电NBT材料时,可以将压电畸变常数的劣化度限定至低水平。
尽管已参考以上具体实施方案描述本发明,但本发明不限于这些示例性实施方案。本领域熟练技术人员将根据以上教导想到上述实施方案的各种改进和变化。例如,本发明压电陶瓷组合物可以含有痕量杂质,只要该杂质不降低压电陶瓷组合物的压电畸变常数和机械品质因数即可。压电器件不限于将多个电极设置在压电陶瓷组合物圆盘形体(烧结体)两侧上的以上形式,而是能够例如通过以下方式来生产:形成压电陶瓷组合物的方形体并将多个电极设置在方形压电陶瓷组合物体上,或者通过将多个不同极性的电极设置在压电陶瓷组合物的一侧上。
1.(修改后)一种压电陶瓷组合物,其包括含有Na、Bi、Co和Ln(镧系元素)的铋层状结构化合物作为主要组分,其中所述压电陶瓷组合物具有原子比为0<Ln/(Na+Bi+Ln)≤0.04并且实质上不含元素周期表的第2族元素。
2.(修改后)一种压电陶瓷组合物,其包括含有Na、Bi、Ti、Co和Ln(镧系元素)并且具有Na0.5Bi4.5Ti4O15型晶体结构的化合物作为主要组分,其中所述压电陶瓷组合物具有原子比为0<Ln/(Na+Bi+Ln)≤0.04并且实质上不含元素周期表的第2族元素。
3.(删除)
4.(修改后)根据权利要求1或2所述的压电陶瓷组合物,其中所述Ln为La、Ce、Pr、Nd和Yb的至少一种。
5.(修改后)一种压电器件,其包含:
根据权利要求1、2和4任一项所述的压电陶瓷组合物;和
设置在所述压电陶瓷组合物上的不同极性的多个电极。
Claims (5)
1.一种压电陶瓷组合物,其包括含有Na、Bi、Co和Ln(镧系元素)的铋层状结构化合物作为主要组分,其中所述压电陶瓷组合物具有原子比为0<Ln/(Na+Bi+Ln)≤0.04。
2.一种压电陶瓷组合物,其包括含有Na、Bi、Ti、Co和Ln(镧系元素)并且具有Na0.5Bi4.5Ti4O15型晶体结构的化合物作为主要组分,其中所述压电陶瓷组合物具有原子比为0<Ln/(Na+Bi+Ln)≤0.04。
3.根据权利要求1或2所述的压电陶瓷组合物,其中所述压电陶瓷组合物实质上不含元素周期表的第2族元素。
4.根据权利要求1至3任一项所述的压电陶瓷组合物,其中所述Ln为La、Ce、Pr、Nd和Yb的至少一种。
5.一种压电器件,其包含:
根据权利要求1至4任一项所述的压电陶瓷组合物;和
设置在所述压电陶瓷组合物上的不同极性的电极。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007110049 | 2007-04-19 | ||
JP110049/2007 | 2007-04-19 | ||
PCT/JP2008/057536 WO2008130011A1 (ja) | 2007-04-19 | 2008-04-17 | 圧電磁器組成物及び圧電素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101657393A true CN101657393A (zh) | 2010-02-24 |
CN101657393B CN101657393B (zh) | 2012-07-18 |
Family
ID=39875538
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008800120519A Expired - Fee Related CN101657393B (zh) | 2007-04-19 | 2008-04-17 | 压电陶瓷组合物和压电器件 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8502435B2 (zh) |
EP (1) | EP2138473B1 (zh) |
JP (1) | JP5537931B2 (zh) |
KR (1) | KR101393190B1 (zh) |
CN (1) | CN101657393B (zh) |
BR (1) | BRPI0809213B1 (zh) |
WO (1) | WO2008130011A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102205719A (zh) * | 2010-03-12 | 2011-10-05 | 精工爱普生株式会社 | 液体喷射头、液体喷射装置和压电元件以及压电材料 |
WO2017181912A1 (zh) * | 2016-04-22 | 2017-10-26 | 西人马(厦门)科技有限公司 | 无铅压电陶瓷材料和无铅压电元件 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2261191B1 (en) * | 2008-03-18 | 2018-06-13 | Kyocera Corporation | Piezoelectric ceramic, and piezoelectric elementing using the same |
JP5526945B2 (ja) * | 2010-03-31 | 2014-06-18 | Tdk株式会社 | 圧電組成物、圧電磁器、振動子、及び超音波モータ |
US20130093290A1 (en) * | 2011-10-17 | 2013-04-18 | U.S. Government As Represented By The Secretary Of The Army | Stylo-Epitaxial Piezoelectric and Ferroelectric Devices and Method of Manufacturing |
US10266936B2 (en) | 2011-10-17 | 2019-04-23 | The United States Of America As Represented By The Secretary Of The Army | Process for making lead zirconate titanate (PZT) layers and/or platinum electrodes and products thereof |
US9761785B2 (en) * | 2011-10-17 | 2017-09-12 | The United States Of America As Represented By The Secretary Of The Army | Stylo-epitaxial piezoelectric and ferroelectric devices and method of manufacturing |
CN102855959B (zh) * | 2012-09-13 | 2015-07-08 | 上海交通大学 | 一种SrTiO3压敏电阻器用表层银浆及其制备方法 |
CN117602927A (zh) * | 2023-12-01 | 2024-02-27 | 山东利恩斯智能科技有限公司 | 陶瓷材料及其制备方法和应用 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5652465B2 (zh) | 1973-10-19 | 1981-12-12 | ||
US4900702A (en) * | 1987-10-27 | 1990-02-13 | Nippon Ferrite, Ltd. | Dielectric ceramic composition |
JP3244027B2 (ja) * | 1997-07-09 | 2002-01-07 | 株式会社村田製作所 | 圧電磁器組成物 |
US6231779B1 (en) * | 1997-10-20 | 2001-05-15 | Massachusetts Institute Of Technology | Piezoelectric actuators and method of making same |
US20020036282A1 (en) * | 1998-10-19 | 2002-03-28 | Yet-Ming Chiang | Electromechanical actuators |
JPH11217262A (ja) | 1998-01-30 | 1999-08-10 | Tokin Corp | 圧電磁器組成物 |
TW432731B (en) * | 1998-12-01 | 2001-05-01 | Murata Manufacturing Co | Multilayer piezoelectric part |
EP1375448A3 (en) * | 2000-02-08 | 2004-01-28 | TDK Corporation | Piezoelectric ceramics |
JP3367929B2 (ja) | 2000-02-08 | 2003-01-20 | ティーディーケイ株式会社 | 圧電セラミックス |
JP2001302343A (ja) * | 2000-04-19 | 2001-10-31 | Tokin Corp | 圧電磁器組成物 |
US6731049B2 (en) * | 2000-09-20 | 2004-05-04 | Ngk Insulators, Ltd. | Piezoelectric element and process for production thereof |
JP3506113B2 (ja) * | 2000-11-07 | 2004-03-15 | 株式会社村田製作所 | 電子部品 |
JP4260410B2 (ja) * | 2001-05-10 | 2009-04-30 | Tdk株式会社 | 圧電セラミックス |
CN1267356C (zh) * | 2002-01-21 | 2006-08-02 | 北京化工大学 | 制备钛酸钡粉体的方法 |
JP2004077304A (ja) * | 2002-08-19 | 2004-03-11 | Ngk Spark Plug Co Ltd | 圧電素子及びこれを用いたノッキングセンサ |
JP4706479B2 (ja) * | 2003-01-21 | 2011-06-22 | Tdk株式会社 | 薄膜容量素子用組成物、高誘電率絶縁膜、薄膜容量素子、薄膜積層コンデンサおよび薄膜容量素子の製造方法 |
US20060237760A1 (en) * | 2003-02-27 | 2006-10-26 | Tdk Corporation | Thin-film capacitative element and electronic circuit and electronic equipment including the same |
CN100335415C (zh) | 2003-02-28 | 2007-09-05 | 新加坡纳米材料科技有限公司 | 一种制备各种晶态钙钛矿类化合物粉体的方法 |
JP2006169032A (ja) * | 2004-12-15 | 2006-06-29 | Ngk Spark Plug Co Ltd | 圧電磁器組成物および圧電素子 |
-
2008
- 2008-04-17 JP JP2009510858A patent/JP5537931B2/ja not_active Expired - Fee Related
- 2008-04-17 BR BRPI0809213A patent/BRPI0809213B1/pt not_active IP Right Cessation
- 2008-04-17 EP EP08740598.1A patent/EP2138473B1/en not_active Not-in-force
- 2008-04-17 WO PCT/JP2008/057536 patent/WO2008130011A1/ja active Application Filing
- 2008-04-17 US US12/596,117 patent/US8502435B2/en active Active
- 2008-04-17 CN CN2008800120519A patent/CN101657393B/zh not_active Expired - Fee Related
- 2008-04-17 KR KR1020097024088A patent/KR101393190B1/ko active IP Right Grant
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102205719A (zh) * | 2010-03-12 | 2011-10-05 | 精工爱普生株式会社 | 液体喷射头、液体喷射装置和压电元件以及压电材料 |
US9147829B2 (en) | 2010-03-12 | 2015-09-29 | Seiko Epson Corporation | Liquid ejection head |
WO2017181912A1 (zh) * | 2016-04-22 | 2017-10-26 | 西人马(厦门)科技有限公司 | 无铅压电陶瓷材料和无铅压电元件 |
Also Published As
Publication number | Publication date |
---|---|
EP2138473A1 (en) | 2009-12-30 |
CN101657393B (zh) | 2012-07-18 |
JPWO2008130011A1 (ja) | 2010-07-22 |
US8502435B2 (en) | 2013-08-06 |
KR101393190B1 (ko) | 2014-05-08 |
EP2138473A4 (en) | 2013-03-13 |
JP5537931B2 (ja) | 2014-07-02 |
KR20100017131A (ko) | 2010-02-16 |
BRPI0809213B1 (pt) | 2018-10-16 |
EP2138473B1 (en) | 2015-06-24 |
US20100133959A1 (en) | 2010-06-03 |
WO2008130011A1 (ja) | 2008-10-30 |
BRPI0809213A2 (pt) | 2014-09-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101657393B (zh) | 压电陶瓷组合物和压电器件 | |
EP1876155B1 (en) | Piezoelectric porcelain composition and piezoelectric ceramic electronic component | |
EP2295389B1 (en) | Piezoelectric ceramic composition and piezoelectric element made by using the same | |
EP2431343B1 (en) | Piezoelectric ceramic, method for producing same, and piezoelectric device | |
US7498725B2 (en) | Piezoelectric ceramic composition and laminated piezoelectric element | |
EP3370271B1 (en) | Piezoelectric composition and piezoelectric device | |
US7507347B2 (en) | Piezoelectric ceramic composition and laminated piezoelectric element | |
EP3367453A1 (en) | Piezoelectric composition and piezoelectric device | |
CN103172374A (zh) | 压电陶瓷和压电元件 | |
JP4927378B2 (ja) | 圧電磁器組成物および圧電素子 | |
US7808161B2 (en) | Piezoelectric ceramic composition and piezoelectric device | |
WO2004106264A1 (ja) | 圧電磁器組成物及びこれを用いた圧電素子 | |
JP4247936B2 (ja) | 圧電体磁器組成物 | |
JP4260410B2 (ja) | 圧電セラミックス | |
JP2002348173A (ja) | 圧電セラミック材料とその製造方法 | |
JP2006169032A (ja) | 圧電磁器組成物および圧電素子 | |
JP2002284574A (ja) | 圧電セラミックスの製造方法 | |
JP2001048641A (ja) | 圧電磁器組成物 | |
JP4141052B2 (ja) | 圧電磁器組成物 | |
JP2004077304A (ja) | 圧電素子及びこれを用いたノッキングセンサ | |
JP2002356369A (ja) | 圧電セラミックス | |
JP2001294486A (ja) | 圧電セラミックス | |
JP2002284573A (ja) | 圧電セラミックスの製造方法 | |
JP2000022235A (ja) | 圧電磁器組成物 | |
JP2001192266A (ja) | 圧電体磁器組成物 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120718 |
|
CF01 | Termination of patent right due to non-payment of annual fee |