CN117602927A - 陶瓷材料及其制备方法和应用 - Google Patents
陶瓷材料及其制备方法和应用 Download PDFInfo
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- 229910010293 ceramic material Inorganic materials 0.000 title claims abstract description 95
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 28
- 239000000203 mixture Substances 0.000 claims abstract description 23
- 238000000498 ball milling Methods 0.000 claims abstract description 19
- 238000005245 sintering Methods 0.000 claims abstract description 15
- 238000000462 isostatic pressing Methods 0.000 claims abstract description 13
- 238000001035 drying Methods 0.000 claims abstract description 10
- 238000007599 discharging Methods 0.000 claims abstract description 8
- 239000003292 glue Substances 0.000 claims abstract description 8
- 238000009461 vacuum packaging Methods 0.000 claims abstract description 6
- 238000002156 mixing Methods 0.000 claims abstract description 4
- 239000000919 ceramic Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 12
- 229920002545 silicone oil Polymers 0.000 claims description 9
- 230000010287 polarization Effects 0.000 claims description 8
- 239000011230 binding agent Substances 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 claims description 3
- 210000001161 mammalian embryo Anatomy 0.000 claims description 2
- 239000011734 sodium Substances 0.000 description 27
- 230000000052 comparative effect Effects 0.000 description 20
- 239000004372 Polyvinyl alcohol Substances 0.000 description 19
- 229920002451 polyvinyl alcohol Polymers 0.000 description 19
- 230000008878 coupling Effects 0.000 description 16
- 238000010168 coupling process Methods 0.000 description 16
- 238000005859 coupling reaction Methods 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical group CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 6
- 238000001238 wet grinding Methods 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 229910052797 bismuth Inorganic materials 0.000 description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 4
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 4
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 230000000630 rising effect Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 230000007123 defense Effects 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 229910000154 gallium phosphate Inorganic materials 0.000 description 2
- LWFNJDOYCSNXDO-UHFFFAOYSA-K gallium;phosphate Chemical compound [Ga+3].[O-]P([O-])([O-])=O LWFNJDOYCSNXDO-UHFFFAOYSA-K 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- 244000137852 Petrea volubilis Species 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- FSAJRXGMUISOIW-UHFFFAOYSA-N bismuth sodium Chemical compound [Na].[Bi] FSAJRXGMUISOIW-UHFFFAOYSA-N 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 229910001923 silver oxide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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Abstract
本发明公开了一种陶瓷材料及其制备方法和应用,所述陶瓷材料的结构通式为Na0.5Bi4.5Ti4‑xCexO15,陶瓷材料的制备方法包括:将Na源、Bi源、Ti源和Ce源混合,得到混合料,将混合料球磨至混合均匀,干燥,于750~800℃预烧结2~4h,得到预烧结材料;将预烧结材料球磨至混合均匀,干燥,造粒,真空封装,温等静压,得到生胚柱;将生胚柱排胶处理,于1000~1300℃烧结3~5h,得到陶瓷材料。由陶瓷材料制备得到高温压电陶瓷材料。本发明的高温压电陶瓷材料在保证居里温度不下降的同时提高了压电常数,降低了介电损耗;本发明的高温压电陶瓷材料的高温电阻率可达108Ω·㎝,相比于Na0.5Bi4.5Ti4O15陶瓷材料,在相同温度下提高了两个量级。
Description
技术领域
本发明属于压电陶瓷技术领域,具体来说涉及一种陶瓷材料及其制备方法和应用。
背景技术
高温压电材料作为一类不可或缺的功能陶瓷材料,被广泛的应用于航空航天、军事兵器、能源电力、船舶交通以及核电行业、国防军工、地质勘探等特殊环境工作领域;在一些特殊环境下,如:对飞机发动机、导弹飞行设备、核反应堆等运行状态监测的加速度传感器,其核心元件就是高温压电材料,这些都表明高温压电材料有着举重若轻的地位。目前国内应用最广泛的高温压电材料主要是有石英(SiO2),其具有较高的机械品质因数和电阻率,且稳定性能好,但是缺陷是石英在高于570℃时其晶体结构会发生相变,而且机电耦合系数Kp和压电常数也会降低,压电性能在高温下不稳定,这些限制了石英在高温领域内的应用。铌酸锂(LiNbO3)具有良好的机械品质因数和电阻率,虽然居里温度高达1150℃,但是其机电耦合系数Kp随温度的变化太大,极其不稳定,除此之外在高温下铌酸锂会发生分解,这些都限制了其在高温领域的应用。磷酸镓(GaPO4)虽然具有较高的机械品质因数和电阻率,但是在温度高于970℃时会发生相变导致机械品质因数大幅度下降,无法在高温下稳定使用。氮化铝(AlN)虽然在高温下(500℃)具有良好的压电性能,但是却难以培养出高质量大体积的晶体。综上所述,单晶有着良好的优异性能,但是也存在着各自的缺陷,因此需要寻找可以替代单晶的压电材料,即压电陶瓷。
随着航空航天、国防军工等工业的进一步飞速发展,需要的压电器件往往要求工作温度在450℃以上,在高温下不仅具有足够的压电常数,且要求介电损耗低,压电性能稳定,对于传感器而言更是要求其在高温下(500℃及以上)电阻率高达106量级以上,因此有必要寻求一种居里温度高、压电性能稳定以及电阻率高的压电材料。
钙钛矿结构压电陶瓷具有较好的电学稳定性和较高的压电性能,特别是锆钛酸铅Pb(Zr,Ti)O3陶瓷(PZT),但是含铅压电陶瓷对环境污染严重,而且PZT的居里温度Tc仅在380℃左右,最高的稳定工作温度不高于250℃,无法满足高温压电陶瓷实际的服役环境温度。
钨青铜结构压电陶瓷,例如PbNb2O6(PN)基压电陶瓷,具有高于PZT的居里温度(Tc~550℃),但是该材料制备困难,在烧结过程中晶体结构会发生相变,从而导致其致密度低、且表面形貌存在明显裂纹,也不适合高温应用。
铋层状结构压电陶瓷,如Bi4Ti3O12、CaBi4Ti4O5等。它由钙钛矿层和铋氧层按照一定的规律排列成特定的结构。铋层状结构压电陶瓷的特点是居里温度高、低老化率、高介电击穿强度和较高的机械品质因数等特点,且比一些传统的压电陶瓷在高温下具有更高的电阻率,压电性能稳定。铋层状结构压电陶瓷是目前极具发展前途的一类高温压电材料,也是当前国际上高温压电振动传感器中压电陶瓷材料的首选解决方案。铋层状结构压电陶瓷中的Na0.5Bi4.5Ti4O15陶瓷材料的居里温度可达到650℃,压电常数d33约15pC/N,介电损耗tanδ≥0.4%,电阻率为106量级,但是这对于实际应用来说,压电常数太低,且损耗也是偏高的,其压电常数的温漂,即压电常数随温度的变化也是偏大。因此,如何在不牺牲Na0.5Bi4.5Ti4O15陶瓷材料的居里温度的同时,提高其压电常数、降低介电损耗和升高电阻率是关键性问题。
发明内容
针对现有技术的不足,本发明的目的在于提供一种陶瓷材料,该陶瓷材料利用稀土元素Ce元素对钛酸铋钠(Na0.5Bi4.5Ti4O15)陶瓷材料进行掺杂改性。
本发明的另一目的在于提供上述陶瓷材料的制备方法。
本发明的另一目的在于提供一种制备高温压电陶瓷材料的方法,该方法由所述陶瓷材料制备得到高温压电陶瓷材料,在不降低其居里温度的同时提高其压电性能。
本发明的另一目的在于提供上述方法获得的高温压电陶瓷材料。
本发明的目的是通过下述技术方案予以实现的。
一种陶瓷材料,其结构通式为Na0.5Bi4.5Ti4-xCexO15,其中,0.3≤x≤0.6。
在上述技术方案中,0.35≤x≤0.5,优选为0.35<x≤0.45。
上述陶瓷材料的制备方法,包括以下步骤:
步骤1,将Na源、Bi源、Ti源和Ce源混合,得到混合料,将所述混合料球磨至混合均匀,干燥,于750~800℃预烧结2~4h,得到预烧结材料,其中,按物质的量份数计,所述Na源中Na、Bi源中Bi、Ti源中Ti和Ce源中Ce的比为0.5:4.5:(4~x):x;
在步骤1中,所述Na源为Na2CO3,Bi源为Bi2O3,Ti源为TiO2,Ce源为Ce2O3。
在步骤1中,所述预烧结于空气环境中进行。
步骤2,将所述预烧结材料球磨至混合均匀,干燥,造粒,真空封装,温等静压,得到生胚柱;
在步骤2中,所述造粒为将所述预烧结材料和粘合剂混合,按质量份数计,粘合剂和混合料的比为(2~5):1。
在上述技术方案中,所述粘合剂为聚乙烯醇(PVA)水溶液,所述聚乙烯醇(PVA)水溶液为聚乙烯醇(PVA)和水的混合物,按质量份数计,聚乙烯醇(PVA)水溶液中水和聚乙烯醇的比为(15~20):1。
在步骤2中,所述真空封装为于2~4MPa压力下压柱封装。
在步骤2中,所述温等静压的压力为30~50MPa,所述温等静压的保压时间为10~20s,所述温等静压的温度为25~40℃。
在上述技术方案中,所述温等静压的升压速率为2~3MPa/s。
在步骤1和步骤2中,所述球磨采用湿磨,湿磨的介质为无水乙醇,按质量份数计,无水乙醇和混合料的比为(0.5~1):1。
在步骤1和步骤2中,所述球磨的球料比为(3~5):1。
在步骤1和步骤2中,所述干燥的温度为70~80℃,干燥的时间为7~8h。
在步骤1和步骤2中,所述球磨的转速为300~400r/min,球磨的时间为8~12h。
在步骤2中,生胚柱的厚度为10~13mm、直径为9~10mm。
步骤3,将所述生胚柱排胶处理,于1000~1300℃烧结3~5h,得到陶瓷材料。
在步骤3中,排胶处理的温度为550~650℃,排胶处理的时间为0.5~2h。
在步骤3中,升温至550~650℃的升温速率为3~5℃/min。
在步骤3中,升温至1000~1300℃的升温速率为3~5℃/min。
制备高温压电陶瓷材料的方法,包括:将所述陶瓷材料先后依次进行涂覆电极(被电极)、电极烧结(烧电极)、硅油中高压极化,得到高温压电陶瓷材料。
在上述技术方案中,所述电极烧结为于800~850℃保温10~40min。
在上述技术方案中,所述硅油中高压极化为于150~200℃的硅油中以10~12kV/mm的极化电压极化30~40min。
在上述技术方案中,涂覆的所述电极为高温银浆。
上述陶瓷材料在压电陶瓷中的应用。
与现有技术相比,本发明的有益效果如下:
1.本发明的高温压电陶瓷材料选择稀土元素Ce元素取代Ti元素,并控制Ce元素的掺杂量,相比于Na0.5Bi4.5Ti4O15陶瓷材料,本发明在保证居里温度不下降的同时提高了压电常数,降低了介电损耗。本发明高温压电陶瓷材料的居里温度最高可达659℃,压电常数高达30pC/N,介电损耗最低可以达到0.156%,具有优异的高温稳定性;
2.本发明高温压电陶瓷材料在室温至600℃时,压电常数温漂微小,能够在500℃下长期稳定运行;本发明高温压电陶瓷材料在室温至600℃时,介电损耗随温度的变化趋势低;
3.本发明高温压电陶瓷材料的高温电阻率可达108Ω·㎝(500℃),相比于Na0.5Bi4.5Ti4O15陶瓷材料,在相同温度下提高了两个量级,在高温领域有着巨大的应用前景;
4.本发明的制备方法简单,成本低廉,适合大批量工业生产。
附图说明
图1为实施例1~9制备所得高温压电陶瓷材料的XRD衍射图谱;
图2为(a)实施例2、(b)实施例5、(c)实施例8、(d)实施例9制备所得高温压电陶瓷材料的SEM扫描电镜图;
图3为实施例2~9制备所得高温压电陶瓷材料的介电损耗随温度的变化图;
图4为实施例5制备所得高温压电陶瓷材料的居里温度图;
图5为对比例2制备所得压电陶瓷材料的居里温度图;
图6为实施例1~9所得高温压电陶瓷材料的压电常数随温度的变化图;
图7为对比例1~4中压电陶瓷材料的压电常数随温度的变化图;
图8为实施例1~9制备所得高温压电陶瓷材料和对比例1~4制备所得压电陶瓷材料在500℃下的电阻率;
图9为对比例1~4中压电陶瓷材料的介电损耗随温度的变化图。
具体实施方式
下面结合具体实施例进一步说明本发明的技术方案。
下述实施例中,Na源为Na2CO3,Bi源为Bi2O3,Ti源为TiO2,Ce源为Ce2O3。Na2CO3、Bi2O3、TiO2和Ce2O3均为分析纯。
高温银浆:西安宏兴星电子浆料科技股份有限公司,型号C-1002。
下述压电常数、介电常数、介电损耗、机电耦合系数和机械品质因数若非特殊说明,均为室温20~25℃检测获得。
实施例1~9
一种制备高温压电陶瓷材料的方法,包括:
将陶瓷材料切成厚度为0.6mm的陶瓷片,将陶瓷片的双面均采用600目砂纸进行抛光,抛光后将陶瓷片双面涂覆高温银浆(即被电极),于800℃保温20min以进行电极烧结(即烧电极),电极烧结后在A4纸上进行抛光磨去表面氧化银,得到高温压电陶瓷材料前体,将高温压电陶瓷材料前体于硅油中高压极化,得到高温压电陶瓷材料,其中,硅油中高压极化为于180℃的硅油中以12kV/mm(极化电压/高温压电陶瓷材料前体的厚度)的极化电压(直流电压)极化40min。
上述陶瓷材料的制备方法,包括以下步骤:
步骤1,将Na源、Bi源、Ti源和Ce源混合,得到混合料,将混合料球磨(球磨采用湿磨,湿磨的介质为无水乙醇,按质量份数计,本步骤中球磨所采用无水乙醇和混合料的比为1:1,球磨的转速为400r/min,球磨的时间为8h,球磨的球料比为4:1)至混合均匀,于75℃干燥8h,在空气环境下,于800℃预烧结3h,得到预烧结材料,其中,按物质的量份数计,Na源中Na、Bi源中Bi、Ti源中Ti和Ce源中Ce的比为0.5:4.5:(4~x):x,x的值如表1所示;
表1
步骤2,将预烧结材料球磨(球磨采用湿磨,湿磨的介质为无水乙醇,按质量份数计,本步骤中球磨所采用无水乙醇和混合料的比为1:1,球磨的转速为400r/min,球磨的时间为8h,球磨的球料比为4:1)至混合均匀,于75℃干燥8h,造粒,使用干压型压片机在3MPa压力下压柱封装(真空封装),以40MPa的压力温等静压10s(温等静压的升压速率为3MPa/s,温等静压的温度为40℃),得到厚度为13mm、直径为10mm的生胚柱,其中,造粒为将预烧结材料和粘合剂混合进行造粒,按质量份数计,粘合剂和混合料的比为4:1,粘合剂为聚乙烯醇(PVA)水溶液,聚乙烯醇(PVA)水溶液为聚乙烯醇(PVA)和水的混合物,按质量份数计,聚乙烯醇(PVA)水溶液中水和聚乙烯醇(PVA)的比为18:1;
步骤3,将生胚柱于650℃排胶处理2h(升温速率为4℃/min),排出粘合剂,同时可以使陶瓷材料具有一定的硬度;再于1200℃烧结3h(升温速率为4℃/min),得到陶瓷材料。
实施例1制备所得高温压电陶瓷材料的压电常数d33=15pC/N,介电常数ε=153,介电损耗tanδ=0.45%,机电耦合系数kp=2.1%,机械品质因数Qm=3316,500℃时,电阻率ρ=5.6×106Ω●㎝。
实施例2制备所得高温压电陶瓷材料的压电常数d33=20.0pC/N,介电常数ε=158.07,介电损耗tanδ=0.26%,机电耦合系数kp=6.4%,机械品质因数Qm=2123,500℃时,电阻率ρ=6.8×107Ω●㎝。
实施例3制备所得高温压电陶瓷材料的压电常数d33=27.6pC/N,介电常数ε=150.1,介电损耗tanδ=0.25%,机电耦合系数kp=6.7%,机械品质因数Qm=2120,500℃时,电阻率ρ=7.5×107Ω●㎝。
实施例4制备所得高温压电陶瓷材料的压电常数d33=28.8pC/N, 介电常数ε=145 ,介电损耗tanδ=0.20%,机电耦合系数kp=7.0%,机械品质因数Qm=2012,500℃时,电阻率ρ=8.56×107Ω●㎝。
实施例5制备所得高温压电陶瓷材料的压电常数d33=30pC/N, 介电常数ε=140 ,介电损耗tanδ=0.156%,机电耦合系数kp= 7.2%,机械品质因数Qm=1879,500℃时,电阻率ρ=1.23×108Ω●㎝。
实施例6制备所得高温压电陶瓷材料的压电常数d33=29pC/N, 介电常数ε=143 ,介电损耗tanδ=0.18%,机电耦合系数kp= 7.0%,机械品质因数Qm=1982,500℃时,电阻率ρ=9.2×107Ω●㎝。
实施例7制备所得高温压电陶瓷材料的压电常数d33=28pC/N, 介电常数ε=143 ,介电损耗tanδ=0.19%,机电耦合系数kp= 6.95%,机械品质因数Qm=1982,500℃时,电阻率ρ=8.0×107Ω●㎝。
实施例8制备所得高温压电陶瓷材料的压电常数d33=27 pC/N, 介电常数ε=148,介电损耗tanδ=0.20%,机电耦合系数kp=6.87%,机械品质因数Qm=2458,500℃时,电阻率ρ=7.9×107Ω●㎝。
实施例9制备所得高温压电陶瓷材料的压电常数d33=24 pC/N, 介电常数ε=150,介电损耗tanδ=0.24%,机电耦合系数kp=6.2%,机械品质因数Qm=2826,500℃时,电阻率ρ=7.1×107Ω●㎝。
实施例2、5、8、9制备所得高温压电陶瓷材料的SEM扫描电镜图片如图2所示,实施例1~9制备所得高温压电陶瓷材料的XRD衍射图谱如图1所示,实施例2~9制备所得高温压电陶瓷材料的介电损耗随温度的变化如图3所示(温度变化范围:室温~600℃),实施例1~9制备所得高温压电陶瓷材料的压电常数随温度的变化如图6所示。
实施例5制备所得高温压电陶瓷材料的居里温度如图4所示。
实施例1~9制备所得高温压电陶瓷材料的居里温度(Tc)如表2所示。
表2
对比例1
一种压电陶瓷材料的制备方法,与实施例1中“制备高温压电陶瓷材料的方法”基本相同,唯一不同之处在于:混合料,本对比例中混合料为Na源、Bi源、Ti源和Ce源,按物质的量份数计, Na源中Na、Bi源中Bi、Ti源中Ti和Ce源中Ce的比为0.5:4.5:4:0.2。
本对比例制备所得压电陶瓷材料的压电常数d33=16pC/N,介电常数ε=150,介电损耗tanδ=0.35%,居里温度Tc=660℃,机电耦合系数kp= 2.2%,机械品质因数Qm=3310,500℃时,电阻率ρ=1.2×107Ω●㎝。
对比例2
一种压电陶瓷材料的制备方法,与实施例1中“制备高温压电陶瓷材料的方法”基本相同,唯一不同之处在于:混合料,本对比例中混合料为Na源、Bi源、Ti源和Ce源,按物质的量份数计, Na源中Na、Bi源中Bi、Ti源中Ti和Ce源中Ce的比为0.5:4.5:4:0.4。
本对比例所得压电陶瓷材料的压电常数d33=27pC/N,介电常数ε=157,介电损耗tanδ=0.2%,居里温度Tc=658℃,机电耦合系数kp=5.3%,机械品质因数Qm=1702,500℃时,电阻率ρ=7.8×107Ω●㎝。
对比例3
一种压电陶瓷材料的制备方法,与实施例1中“制备高温压电陶瓷材料的方法”基本相同,唯一不同之处在于:混合料,本对比例中混合料为Na源、Bi源、Ti源和Ce源,按物质的量份数计, Na源中Na、Bi源中Bi、Ti源中Ti和Ce源中Ce的比为0.5:4.5:4:0.6。
本对比例所得压电陶瓷材料的压电常数d33=25C/N,介电常数ε=148,介电损耗tanδ=0.16%,居里温度Tc=650℃,机电耦合系数kp=6.4%,机械品质因数Qm=1480,500℃时,电阻率ρ=5.4×107Ω●㎝。
对比例4
一种压电陶瓷材料的制备方法,与实施例1中“制备高温压电陶瓷材料的方法”基本相同,唯一不同之处在于:混合料,本对比例中混合料为Na源、Bi源、Ti源和Ce源,按物质的量份数计, Na源中Na、Bi源中Bi、Ti源中Ti和Ce源中Ce的比为0.5:4.5:4:0.8。
本对比例所得压电陶瓷材料的压电常数d33=22pC/N,介电常数ε=156,介电损耗tanδ=0.28%,居里温度Tc=648℃,机电耦合系数kp=6.2%,机械品质因数Qm=2100,500℃时,电阻率ρ=3.5×107Ω●㎝。
对比例1~4制备所得压电陶瓷材料的压电常数随温度的变化如图7所示,实施例1~9制备所得高温压电陶瓷材料和对比例1~4制备所得压电陶瓷材料的电阻率如图8所示。
对比例2制备所得压电陶瓷材料的居里温度如图5所示。
图9为对比例1~4中压电陶瓷材料的介电损耗随温度的变化图。
以上对本发明做了示例性的描述,应该说明的是,在不脱离本发明的核心的情况下,任何简单的变形、修改或者其他本领域技术人员能够不花费创造性劳动的等同替换均落入本发明的保护范围。
Claims (10)
1.一种陶瓷材料,其特征在于,其结构通式为Na0.5Bi4.5Ti4-xCexO15,其中,0.3≤x≤0.6。
2.根据权利要求1所述的陶瓷材料,其特征在于,0.35≤x≤0.5。
3.如权利要求1所述陶瓷材料的制备方法,其特征在于,包括以下步骤:
步骤1,将Na源、Bi源、Ti源和Ce源混合,得到混合料,将所述混合料球磨至混合均匀,干燥,于750~800℃预烧结2~4h,得到预烧结材料,其中,按物质的量份数计,所述Na源中Na、Bi源中Bi、Ti源中Ti和Ce源中Ce的比为0.5:4.5:(4~x):x;
步骤2,将所述预烧结材料球磨至混合均匀,干燥,造粒,真空封装,温等静压,得到生胚柱;
步骤3,将所述生胚柱排胶处理,于1000~1300℃烧结3~5h,得到陶瓷材料。
4.根据权利要求3所述的制备方法,其特征在于,在步骤2中,所述造粒为将所述预烧结材料和粘合剂混合,按质量份数计,粘合剂和混合料的比为(2~5):1。
5.根据权利要求3所述的制备方法,其特征在于,在步骤2中,所述真空封装为于2~4MPa压力下压柱封装。
6.根据权利要求3所述的制备方法,其特征在于,在步骤2中,所述温等静压的压力为30~50MPa,所述温等静压的保压时间为10~20s,所述温等静压的温度为25~40℃。
7.根据权利要求3所述的制备方法,其特征在于,在步骤3中,排胶处理的温度为550~650℃,排胶处理的时间为0.5~2h。
8.一种制备高温压电陶瓷材料的方法,其特征在于,包括:将权利要求1所述陶瓷材料先后依次进行涂覆电极、电极烧结、硅油中高压极化,得到高温压电陶瓷材料。
9.根据权利要求8所述的方法,其特征在于,所述电极烧结为于800~850℃保温10~40min;所述硅油中高压极化为于150~200℃的硅油中以10~12kV/mm的极化电压极化30~40min。
10.如权利要求1所述的陶瓷材料在压电陶瓷中的应用。
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