CN1015941B - 按反射方式使用的显示装置 - Google Patents
按反射方式使用的显示装置Info
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- CN1015941B CN1015941B CN88104511A CN88104511A CN1015941B CN 1015941 B CN1015941 B CN 1015941B CN 88104511 A CN88104511 A CN 88104511A CN 88104511 A CN88104511 A CN 88104511A CN 1015941 B CN1015941 B CN 1015941B
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Abstract
一种依据在一些薄层中介电各向异性的液晶显示装置(1),故反射后两个光状态之间的有效光程长度差是1/2λ。使用配备有驱动元件(12)的半导体主体作反射基底(6),用反射层(24)完全涂敷上述驱动元件(12)。
Description
本发明涉及一种按反射方式使用的显示装置,它包括一层液晶材料,该液晶材料位于至少具有一个透明的第一控制电极的第一透明支撑板和用隔板将其隔开的一个第二支撑板之间,它还包括具有一个或多个开关元件的至少一个半导体主体,用于驱动按行和列排列的象素阵列,该主体还具有可分别被电驱动的图象电极,所说的图象电极至少在开关元件区域基本上完全复盖了该半导体主体。
从美国专利No.4,239,346可以了解到前一段中所描述的这种类型的一种显示装置。但在这种装置中所用的效应(动态散布)是缓慢的。
本发明的一个目的是提供一种在第一段中描述的这种类型的显示装置,它即具有足够高密度的象素,又能足够快地显示迅速变化的图象。
本发明的另一个目的是要提供一种显示装置,在此装置中能以可再现方式得到灰色标度。
为此,按照本发明的显示装置的特征在于,通过加在图象电极上的电压该液晶材料层可在两种状态之间变换,所说的显示装置根据所施加的电压可在第一状态和第二状态之间的连续减少或连续增加的反射值的一个范围内变化,其中在第一状态下液晶材料的分子具有第一取向,在第二状态下液晶的分子具有第二取向,第二取向基本上垂直于第一取向,反射后两个状态之间的有效光路长度差的差值对于中心波长为λ0的一个入射光速来说基本上是1/2λ0,在两种状态中
的一种状态下反射的光量最大,而在另一种状态下反射的光量最小。
本发明所依据的原则就是,为了获得良好的操作结果应该把有效光程差限制在大致为1/2λ0。这就是说,必须减少液晶材料层的厚度,从而转换时间可减少到几个毫秒。
当使用具有负介电各向异性的材料时,无电压状态下液晶分子的取向基本上垂直于支撑板。基本上垂直入射的光不会受到二次折射,並且根据偏光镜的使用情况,上述基本上垂直入射的光在反射后或者能通过去或者不能穿过去。
光的二次折射和该倾斜角有关,故从一个固定的门限电压开始要产生二次折射。如果该门限电压增加,二次折射迅速增加到反射后有效光程长度差为1/2λ0的一个数值。在习惯上常用的装置中由于所用的液晶层厚度非常大,所以调整这个数值是非常重要的;再考虑到二次折射的迅速增加,这使中间状态(灰色标度)的调整非常困难。
因而,按照本发明的显示装置的一个最佳实施例的特征在于,无电压状态下液晶材料分子的取向基本上是平行于支撑板,或者是相对于支撑板的平面以小角度延伸。这就提供了良好调整灰色标度的可能性。
所以,最好为支撑板配备取向层,此取向层使液晶分子的取向基本上平行于支撑板的平面,或者平行于和支撑平面成某一角度的一个平面(倾斜的),偏光镜的偏振方向和第一支撑平面区域的分子取向成某一角度(最好是45°)。
在这样一种装置中,由于使用了具有正的介电各向异性的液晶材料,可以按可再现方式获得灰色标度。在零电压下二次折射最大,所以2d△n=1/2λ0成立,其中△n是普通光波和异常光波折射
率之差,d是液晶材料层的厚度。现在,在交叉的偏光镜和检偏器之间就得到了最大的反射。在电压增加的情况下,液晶分子朝向垂直于支撑板的轴。于是就获得一个相当平滑的电压/传输特性。
为了在该装置中得到一个反射为零的状态,则必须施加一个比较高的电压(理论上是无限高)才能使所有分子的取向都垂直于支撑板。
为避免这样,最好提供一个具有相反的二次折射的相位板,例如其相位旋转一个角度-δ。然后就可以将液晶材料层的厚度选择成:对一个指定的λ来说2d·△n=1/2λ0+2δ成立。在零电压下产生最大的传输,而在垂直于支撑板的轴和液晶分子之间的角度使二次折射产生的相位旋转为δ的情况下来实现消光。这样做所需的电压低得多。实际上,通过液晶材料的电压在0.5伏和2.5伏之间,在这个电压范围内可建立所有的灰色标度。
为此通常所选择的最大厚度d满足:
d≤ (1.2λ0)/(4Δn)
其中λ0是所用的波长。在波长高达800毫微米左右时,並且△n的值约为0.15,则该液晶层的厚度至多为2微米。
在两个支撑板上的液晶分子取向可能有一个交互的扭曲。这对显示装置的转换速度可能会产生有利的影响。
例如可借助在未提前公开的专利申请NL8701347(PHN12 145)中所描述的方法来获取期望的液晶材料层厚度一致性。一个比较容易制造的实施方案的特征是,给一个支撑板提供隔板,而这些隔板是通过对一个均匀层进行浸蚀制得的,並且两个
支撑板是通过压力件保持在一起的。为了获得均匀分布的压力,例如可使用硅橡胶作中间材料。
为了提高反射能力,最好给第二支撑板提供一个附加的反射层(介质镜),此反射层复盖了所有象素点和(可能的)半导体材料的中间部分。将该中间半导体材料对入射光屏蔽起来则更好。
第二支撑板在象素区可以是包括半导体元件(例如非晶形硅或多晶硅的薄膜晶体管开关)的石英板或玻璃板,例如在提供介质镜和(可能的)隔板之前要对该支撑板进行偏光处理。但是为此目的最好选择一个具有驱动线路的半导体基底层。借助于驱动电路和驱动线就在第二支撑板内提供了由导电材料组成的一个额外的层(或结构)以防止来自于行和列的对图象电极的交互干扰。进而,还可以给该半导体基底提供一个导热材料层(例如一个金属层)来冷却该基底。另外,例如还可以通过在半导体基底和硅橡胶之间单另加上一块金属板来构成上述导热材料层。
如上所述,所述的显示装置特别适合于要用(彩色)投影电视的那些装置上。
下面对照附图通过实例较详细地描述本发明,其中:
图1是支撑板中的一个支撑板的部分平面示意图;
图2是从图1中的Ⅱ-Ⅱ线剖取的剖面示意图;
图3图示出依据正介电各向异性的一个液晶效应;
图4表示相关的电压/光强特性;以及
图5图示出图1、图2的装置在投影电视中的使用情况。
图1是一个平面示意图,图2是一个显示装置1的剖面示意图,显示装置1包括第一支撑板2,例如可由玻璃制成,支撑板2有一个
透明的电极3,电极3由氧化锡铟(indium tin oxide)或其它适当的材料构成,如果必要,支撑板2还有一个取向层4,它的作用可能是防止在液晶材料5和电极之间产生不期望有的反应。在第一支撑板和第二支撑板之间存在液晶材料5,例如ZLI1132(Merck),第二支撑板由半导体主体6构成,两个支撑板由隔板7隔开。用边框8将该装置封闭起来。
在本实施例中,把由例如用铝作成的反射图象电极9组成的象素阵列安排在第二支撑板(即半导体主体)上。这些图象电极可由在半导体主体6中做好的开关元件进行电驱动。例如由P型基底10组成的这个半导体主体在主表面11上包括n-MOS晶体管12,将这些晶体管的n型源极区13连到n+型区14,对于一列中的所有象素而言n+型区14是公用的,所以n+型区起到列导体的作用。将MOS晶体管12的n型漏极区15连接到n+型接触区以便实现和图象电极9的接触。
给主表面11涂敷一层绝缘材料17,例如氧化硅,它在选通电极18区域起选通氧化层的作用。通过浅离子注入将源极区13和漏极区15安排成相对于选通电极18为自记录方式。在一行中由多个象素形成的选通电极18是一个行电极19的组成部分。每一个晶体管12和相关的图象电极9可通过行电极9和列电极14分别单独驱动。为了使选通电极电绝缘,配备第二个绝缘层20。在本实施例中,在此层20上提供有一个导体结构21,它在n+型层14和行电极19的上方延伸。通过对这个导体结构施加一个固定电压(例如地电位),能防止来自列和行导体对图象电极9的交互干扰。当然,导体结构21也可以在开关元件和半导体主体的其它部分的上方延伸;当
然,它们在绝缘层17,20和23中的接触孔22区域还要包括一些凹槽,绝缘层23使导体结构21和图象电极9绝缘。为了得到平滑的镜面,在为了在接触区16和图象电极9之间实现电连接而提供接触喷涂金属粉25和接触孔22之前,可以将绝缘层22极化。为了提高反射能力,可以给整个表面都涂敷一个介电镜24。为了得到良好的冷却效果,半导体主体6的下端有一导热层26。
例如在诸如移位寄存器等控制电子学线路已经被制做在这个半导体主体中时,该半导体主体可延伸到边框8之外。
在本实施例中,图象电极的表面积约为30×30(微米)2,而实际的晶体管12的表面积例如可约为12×15(微米)2。为了提高剩余量,可以将多个晶体管(或其它开关元件)安置在图象电极9的下面。
图1和2所示的装置还包括多个隔板7。这些隔板可以在完成了介电镜24后通过用厚度例如为0.8微米的氧化镁层涂敷被抛光的半导体主体6的表面27来获得。该厚度和所用的液晶材料关系重大。通过光刻浸蚀获得这些隔板。隔板的数量可在每个象素有1和2个隔板与每10至20个象素有一个隔板之间变化,这取决于第二支撑板最终表面的表面变化。在提供氧化镁层之前,这一表面要经受液晶取向处理,例如摩擦。也可以使用相应的浸蚀步骤来同时确定出边框8。
最终的液晶层5由浸蚀出隔板的那一层的厚度确定。在本实施例中,这个厚度是0.8微米。但是按照在本实施例中所使用的依据正介电各向异性的平面型的液晶效应,这一层的厚度可能在例如0.25微米和2微米之间变化。为了得到所需的厚度均匀的液晶层5,先将液晶材料引入到半导体主体6和第一支撑板2之间,然后再使该主体
6和第一支撑板2压紧。在压力足够大的情况下,通过隔板7就得到了实际上厚度均匀的液晶层5,而不管在表面27中是否可能出现从宏观角度观察到的不均匀性。
在本实施例中是通过硅橡胶28来实现上述压紧作用的,例如通过一个或多个螺栓连接29将包括如图所示的外壳30在内的整个组合装置固定在一起,因此整个组合装置承受均匀的压力。
现在参照图3和图4较为详细地阐明所说的平面型的液晶效应和正介电各向异性的使用。将表面层4和27制备成在无电压状态下液晶的分子是指向和支撑面2,6的表面相平行的一个指定的方向。
偏光镜31的偏振方向和液晶分子的取向层(图中用取向元32示出)成45°角。借助于这种偏光镜31引入线偏振光,其偏振方向例如为33(图3a)。由于这一振动方向和液晶的取向成45°角,所以该入射的偏振波被***成两种波:普通波(其振动方向34平行于液晶的取向)和异常波(其振动方向35垂直于振动方向34)。
普通波和异常波的光程长度差在它们反射后刚离开液晶时是2d△n(d为液晶层厚度;△n为普通波和异常波折射率之差)。在如图3a所示的情况下光程长度差最大,这是因为液晶分子的取向基本上平行于支撑板(△n=△nmax)。对于选定的一个波长λ0而言,若选择一个满足公式2d△nmax=1/2λ0的厚度d,则异常的入射光束和出射光束相互之间的位相差为180°(分别用振动方向35和35′表示之)。然后将出射光的偏振方向旋转90°(在图3a中用33′表示),从而可使这束光可通过检偏器36,检偏器36的偏振方向相对于偏光镜31的偏振方向旋转了90°。在V=0时反射出最大的光量。
在图3C的情况下,液晶的取向元32垂直于两个支撑板。现在,入射的偏振光束不被***,並且保持它的偏振方向不变(2d△n=0)。这一光束不能通过检偏器36。
在图36的中间情况下,满足0<2d△n<1/2λ0。出射光束是椭圆或圆偏振的,並且或多或少地通过检偏器36,这取决于施加的电压V和取向元与支撑板之间所成的相关角度。
为了在图3C中实现全部消光,即所有的取向元全都垂直于支撑板,所需的电压极高(理论上为无限大)(图4中的曲线37)。
实际上可以通过选择一个截止电压V1(图4)来避免使用极高的电压,在这一截止电压V1的情况下还要反射一定数量的光,以便和该偏振光的一个相位旋转δ相对应。通过用相位板39来扩展图1所示的装置来获得全部消光,该相位板39例如可由人造偏振片、赛珞玢、或其它能产生相反的相位旋转-δ的适当二次折射材料组成。为了避免这一相位旋转-δ在零电压下也产生二次折射,要选择液晶层厚度使其满足d△nmax=1/4λ0+δ。实际上,这些数值达d= (1.2λ0)/(4Δn) 即足矣。通过依据相位板39的二次折射和相移δ来适当选择d,即可使两个状态之间的有效光程长度差的差值在反射之后为1/2λ0。
在V=0的情况下,取向元32相对于支撑板可能已经成一固定的角度(倾斜的)。还有,在这种情况下可选择满足 (λ0)/(4Δn) ≤d≤ (1.2λ0)/(4Δn) 的厚度d,其中△n是普通波和异常波在
V=0时的折射率的差。
在基于上述效应的反射单元内,观察到所有的中间强度值(灰色色度),其范围自全部反射至全部不反射,其电压范围从接近零伏至近似为2.5伏之间,而得到的开关时间量级为5至10毫秒。这些开关时间还可以进一步减小(到2毫秒左右),其办法是使两个支撑板上的取向交互扭曲。
图5图示出用参照图1和图2描述的装置1实施的一个投影装置。
灯40(示意图)发射出一个光束,该光束通过准直器透镜41,42后投射到一个反射镜43上,因此这束光相对于法线48被小角度反射到液晶装置1的方向。
经过一个平凸透镜44,这束光抵达半导体装置的反射电极,这些反射电极在电子学控制电路的影响下决定了该液晶的状态(或者反射,或者不反射)。该信息例如可以是用天线符号47示意表示出来的电视信号。
经反射后该光束和法线48成小角度地离开了装置1,並且经平凸透镜44和第二透镜45抵达成像平面46。成像平面46例如可以和一个投影屏幕相吻合。例如可分别在反射镜43和平凸透镜44之间以及在透镜44和45之间设置偏光镜和检偏器。
当使用所述的效应时,电压V1(在这一电压下对于不同的颜色产生了消光)的展宽非常小,故对于单色显示而言使用具有宽光谱的灯40就足够用了,而对液晶层的厚度d来说要选择一个例如和λ=0.6微米有关的平均值。
对于彩色显示,图6表示的就是对于三种组合颜色(例如兰、绿和红)中的任一种颜色的补加。光源最好发射一个光谱,中心波长为
λi(i=1,2,3),对于厚度d最好选择 (λi)/(4△n) 。
当然本发明不限于所说明的实施例,对本领域专业人员来说可能会做出几个在本发明范围内的变化。例如第二支撑板的压紧可通过其它的压力装置实现,还可能选择例如合成橡胶或其它适合的材料来代替硅橡胶。
Claims (18)
1、一种按反射方式使用的显示装置,包括一层液晶材料,该液晶材料在第一透明支撑板和第二支撑板之间,上述第一透明支撑板至少有一个透明的控制电极,上术第二支撑板被一些隔板隔开,该显示装置至少还包括一个半导体主体,该主体具有一个或多个开关元件,用于驱动按行和列排列的象素阵列,该主体还具有可分别被电驱动的图象电极,所说图象电极基本上完全复盖了至少在开关元件区域的半导体主体,其特征在于该液晶材料层通过加在图象电极上的电压可在两种状态之间变化,所述的装置依据所加电压在第一状态和第二状态之间往返移动连续减少或连续增加的反射值范围,在该第一状态下液晶分子有一个第一取向,在该第二状态下液晶分子有一个基本上垂直于该第一取向的第二取向,在两个状态之间反射后的有效光程长度差的差值对于中心波长为λO的一个入射光束而言基本上是1/2λO,在两种状态中的一种状态下反射最大的光量,在另一种状态下反射最小的光量。
2、一种如权利要求1所述的显示装置,其特征在于在零电压状态下液晶材料分子的取向基本上平行于支撑板,或者液晶材料平面和支撑板平面成一个小角度。
3、一种如权利要求2所述的显示装置,其特征在于该显示装置包括一个偏光镜和一个检偏器,其特征还在于支撑板具有取向层,它使液晶分子的取向基本上平行于支撑板或者说与支撑板成一个小的角度,其特征在于,偏光镜的偏振方向和第一支撑板区的分子取向成一个角度。
4、一种如权利要求2或3所述的装置,其特征在于,液晶分子的取向和支撑板的交角至多为15°。
5、一种如权利要求1,2或3所述的显示装置,其特征在于偏光镜的偏振方向和第一支撑板区分子的取向之间的交角大致是45°。
6、一种如权利要求3所述的显示装置,其特征在于第一支撑板上的取向相对于第二支撑板上的取向发生了扭曲。
7、一种如权利要求1,2或3所述的显示装置,其特征在于还为该显示装置配置一个由二次折射材料组成的额外层以补偿液晶层中的一定量的二次折射。
8、一种如前述权利要求1,2或3所述的显示装置,其特征在于液晶层的厚度最多为2微米。
9、一种如权利要求1,2或3所述显示装置,其特征在于为一个支撑提供通过对一个基本上均匀层进行浸蚀而得到的隔板,其特征还在于,用压力件将两个支撑板固定在一起,使液晶层得到基本上均匀的厚度。
10、一种如权利要求9所述的显示装置,其特征在于该压力件包括硅橡胶。
11、一种如权利要求1,2或3所述的显示装置,其特征在于,该显示装置在图象电极和液晶材料层之间还包括一个反射材料层。
12、一种如权利要求1,2或3所述的显示装置,其特征在于,图象电极基本上完全复盖了液晶材料区的第二支撑板。
13、一种如权利要求1,2或3所述的显示装置,其特征在于支撑板包括一个装有驱动电路的半导体基底。
14、一种如权利要求12所述的显示装置,其特征在于,至少在驱动线区,在这些驱动线和图象电极之间存在一层导电材料,该导电材料层和该图象电极以及所说的驱动线都是电绝缘的。
15、一种如权利要求13所述的显示装置,其特征在于,至少在驱动线区,在这些驱动线和图象电极之间存在一层导电材料,该导电材料层和该图象电极以及所说的驱动线都是电绝缘的。
16、一种如权利要求12所述的显示装置,其特征在于该显示装置在远离液晶材料的半导体材料侧还有一层导热材料。
17、一种如权利要求13所述的显示装置,其特征在于该显示装置在远离液晶材料的半导体材料侧还有一层导热材料。
18、一种用于投影电视的装置,其特征在于它包括至少一个光源,光源的光入射到一个如前述权利要求中任何一个所述的显示装置上,并且依据象素的光状态被反射,其特征还在于,这样调制的光经投影装置成像。
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1988
- 1988-05-04 NL NL8801164A patent/NL8801164A/nl not_active Application Discontinuation
- 1988-06-07 AT AT88201162T patent/ATE122158T1/de not_active IP Right Cessation
- 1988-06-07 EP EP88201162A patent/EP0294899B1/en not_active Expired - Lifetime
- 1988-06-07 DE DE3853698T patent/DE3853698T2/de not_active Expired - Fee Related
- 1988-06-08 CN CN88104511A patent/CN1015941B/zh not_active Expired
- 1988-06-08 US US07/204,145 patent/US4999619A/en not_active Expired - Lifetime
- 1988-06-10 KR KR1019880006969A patent/KR890000917A/ko not_active Application Discontinuation
- 1988-06-10 JP JP63141933A patent/JP2896897B2/ja not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1293641C (zh) * | 1992-12-09 | 2007-01-03 | 株式会社半导体能源研究所 | 电子电路 |
Also Published As
Publication number | Publication date |
---|---|
KR890000917A (ko) | 1989-03-17 |
EP0294899A2 (en) | 1988-12-14 |
EP0294899A3 (en) | 1990-08-22 |
EP0294899B1 (en) | 1995-05-03 |
US4999619A (en) | 1991-03-12 |
DE3853698T2 (de) | 1996-01-18 |
CN1030144A (zh) | 1989-01-04 |
JP2896897B2 (ja) | 1999-05-31 |
JPS647021A (en) | 1989-01-11 |
NL8801164A (nl) | 1989-01-02 |
ATE122158T1 (de) | 1995-05-15 |
DE3853698D1 (de) | 1995-06-08 |
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