CN101582449A - 薄膜晶体管 - Google Patents
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- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
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Abstract
本发明涉及一种薄膜晶体管,包括一源极、一漏极、一半导体层及一栅极,该漏极与该源极间隔设置,该半导体层与该源极和漏极电连接,该栅极通过一绝缘层与该半导体层、源极及漏极绝缘设置,其中,该半导体层包括至少两个沿相同方向重叠的碳纳米管薄膜,每一碳纳米管薄膜包括多个首尾相连且沿同一方向排列的碳纳米管,且至少部分碳纳米管沿源极至漏极方向排列。
Description
技术领域
本发明涉及一种薄膜晶体管,尤其涉及一种基于碳纳米管的薄膜晶体管。
背景技术
薄膜晶体管(Thin Film Transistor,TFT)是现代微电子技术中的一种关键性电子元件,目前已经被广泛的应用于平板显示器等领域。薄膜晶体管主要包括栅极、绝缘层、半导体层、源极和漏极。其中,源极和漏极间隔设置并与半导体层电连接,栅极通过绝缘层与半导体层及源极和漏极间隔绝缘设置。所述半导体层位于所述源极和漏极之间的区域形成一沟道区域。薄膜晶体管中的栅极、源极、漏极均由导电材料构成,该导电材料一般为金属或合金。当在栅极上施加一电压时,与栅极通过绝缘层间隔设置的半导体层中的沟道区域会积累载流子,当载流子积累到一定程度,与半导体层电连接的源极漏极之间将导通,从而有电流从源极流向漏极。在实际应用中,对薄膜晶体管的要求是希望得到较大的开关电流比。影响上述开关电流比的因素除薄膜晶体管的制备工艺外,薄膜晶体管半导体层中半导体材料的载流子迁移率为影响开关电流比的最重要的影响因素之一。
现有技术中,薄膜晶体管中形成半导体层的材料为非晶硅、多晶硅或有机半导体聚合物等(R.E.I.Schropp,B.Stannowski,J.K.Rath,New challengesin thin film transistor research,Journal of Non-Crystalline Solids,299-302,1304-1310(2002))。以非晶硅作为半导体层的非晶硅薄膜晶体管的制造技术较为成熟,但在非晶硅薄膜晶体管中,由于半导体层中通常含有大量的悬挂键,使得载流子的迁移率很低(一般小于1cm2V-1s-1),从而导致薄膜晶体管的响应速度较慢。以多晶硅作为半导体层的薄膜晶体管相对于以非晶硅作为半导体层的薄膜晶体管,具有较高的载流子迁移率(一般约为10cm2V-1s-1),因此响应速度也较快。但多晶硅薄膜晶体管低温制造成本较高,方法较复杂,大面积制造困难,且多晶硅薄膜晶体管的关态电流较大。相较于上述传统的无机薄膜晶体管,采用有机半导体聚合物做半导体层的有机薄膜晶体管具有成本低、制造温度低的优点,且有机薄膜晶体管具有较高的柔韧性。但由于有机半导体在常温下多为跳跃式传导,表现出较高的电阻率、较低的载流子迁移率,使得有机薄膜晶体管的响应速度较慢。
碳纳米管具有优异的力学及电学性能。并且,随着碳纳米管螺旋方式的变化,碳纳米管可呈现出金属性或半导体性。半导体性的碳纳米管具有较高的载流子迁移率(一般可达1000~1500cm2V-1s-1),是制造晶体管的理想材料。现有技术中已有报道采用半导体性碳纳米管形成的碳纳米管层作为薄膜晶体管的半导体层。现有技术中的碳纳米管层中,碳纳米管为无序排列或垂直于基底排列,形成一无序碳纳米管层或一碳纳米管阵列。然而,在上述无序碳纳米管层中,碳纳米管随机分布。载流子在上述无序碳纳米管层中的传导路径较长,不利于获得具有较高载流子迁移率的薄膜晶体管。另外,上述无序碳纳米管层为通过喷墨法形成,碳纳米管层中的碳纳米管之间通过粘结剂相互结合,因此,该碳纳米管层为一较为松散结构,柔韧性较差,不利于制造柔性薄膜晶体管。在上述碳纳米管阵列中,碳纳米管排列方向垂直于基底方向。由于碳纳米管具有较好的载流子轴向传输性能,而径向方向的传输性能较差,故垂直于基底方向排列的碳纳米管同样不利于获得具有较高载流子迁移率的薄膜晶体管。故上述两种碳纳米管的排列方式均不能有效利用碳纳米管的高载流子迁移率。因此,现有技术中采用无序碳纳米管层或碳纳米管阵列作半导体层的薄膜晶体管不利于获得具有较高载流子迁移率及较高的响应速度的薄膜晶体管,且现有技术中的薄膜晶体管的柔韧性较差。
综上所述,确有必要提供一种薄膜晶体管,该薄膜晶体管具有较高的载流子迁移率,较高的响应速度,以及较好的柔韧性。
发明内容
一种薄膜晶体管,包括一源极、一漏极、一半导体层及一栅极,该漏极与该源极间隔设置,该半导体层与该源极和漏极电连接,该栅极通过一绝缘层与该半导体层、源极及漏极绝缘设置,其中,该半导体层包括至少两个沿相同方向重叠的碳纳米管薄膜,每一碳纳米管薄膜包括多个首尾相连且沿同一方向排列的碳纳米管,且至少部分碳纳米管的排列方向沿源极至漏极方向延伸。
本技术方案实施例提供的采用至少两个沿相同方向重叠设置的碳纳米管薄膜作为半导体层的薄膜晶体管具有以下优点:其一,由于碳纳米管薄膜中的碳纳米管首尾相连且排列方向沿源极至漏极方向排列,故载流子由源极经半导体层至漏极方向传输可具有较短的传输路径,从而有利于获得具有较大的载流子迁移率的薄膜晶体管,进而有利于提高薄膜晶体管的响应速度。其二,由于采用该至少两个碳纳米管薄膜重叠设置作为半导体层,且每一碳纳米管薄膜中碳纳米管之间通过范德华力首尾相连,则碳纳米管薄膜具有较好的韧性及机械强度,可以用于制造柔性的薄膜晶体管。
附图说明
图1是本技术方案第一实施例薄膜晶体管的剖视结构示意图。
图2是本技术方案第一实施例薄膜晶体管中碳纳米管薄膜的扫描电镜照片。
图3是本技术方案第一实施例工作时的薄膜晶体管的结构示意图。
图4是本技术方案第二实施例薄膜晶体管的剖视结构示意图。
具体实施方式
以下将结合附图详细说明本技术方案实施例提供的薄膜晶体管。
请参阅图1,本技术方案第一实施例提供一种薄膜晶体管10,该薄膜晶体管10为顶栅型,其包括一半导体层140、一源极151、一漏极152、一绝缘层130及一栅极120。所述薄膜晶体管10形成在一绝缘基板110表面。
上述半导体层140设置于上述绝缘基板110表面。上述源极151及漏极152间隔设置于上述半导体层140表面。上述绝缘层130设置于上述半导体层140表面。上述栅极120设置于上述绝缘层130表面,并通过该绝缘层130与该半导体层140及源极151和漏极152绝缘设置。所述半导体层140位于所述源极151和漏极152之间的区域形成一沟道156。
所述源极151及漏极152可以间隔设置于所述半导体层140的上表面位于所述绝缘层130与半导体层140之间,此时,源极151、漏极152与栅极120设置于半导体层140的同一侧,形成一共面型薄膜晶体管10。或者,所述源极151及漏极152可以间隔设置于所述半导体层140的下表面,此时,源极151、漏极152与栅极120设置于半导体层140的不同侧,位于所述绝缘基板110与半导体层140之间,形成一交错型薄膜晶体管10。可以理解,所述源极151及漏极152的设置位置不限。只要确保上述源极151及漏极152间隔设置,并与上述半导体层140电连接,使半导体层140中至少部分碳纳米管沿源极151至漏极152方向排列即可。
所述绝缘基板110起支撑作用,其材料可选择为玻璃、石英、陶瓷、金刚石、硅片等硬性材料或塑料、树脂等柔性材料。本实施例中,所述绝缘基板110的材料为玻璃。所述绝缘基板110用于对薄膜晶体管10提供支撑。所述绝缘基板110也可选用大规模集成电路中的基板,且多个薄膜晶体管10可按照预定规律或图形集成于同一绝缘基板110上,形成薄膜晶体管面板或其它薄膜晶体管半导体器件。
所述半导体层140中包括至少两个重叠的碳纳米管薄膜,每一碳纳米管薄膜包括多个择优取向排列且首尾相连的半导体性碳纳米管,相邻的两个碳纳米管薄膜中的碳纳米管沿同一方向排列。所述碳纳米管薄膜中至少部分碳纳米管的排列方向沿源极151至漏极152方向延伸。优选地,上述碳纳米管薄膜中的碳纳米管的排列方向均沿从源极151指向漏极152的方向延伸。相邻的碳纳米管薄膜之间通过范德华力紧密结合。
请参阅图2,该碳纳米管薄膜进一步包括多个碳纳米管束片段,每个碳纳米管束片段具有大致相等的长度且每个碳纳米管束片段由多个相互平行的碳纳米管束构成,碳纳米管束片段两端通过范德华力相互连接。该碳纳米管薄膜的长度及宽度不限,可根据实际需求制备。上述半导体层140中的碳纳米管薄膜的层数不限。该碳纳米管薄膜的厚度为0.5纳米~100微米。碳纳米管薄膜中的碳纳米管可以是单壁碳纳米管或双壁碳纳米管。所述单壁碳纳米管的直径为0.5纳米~50纳米;所述双壁碳纳米管的直径为1.0纳米~50纳米。优选地,所述碳纳米管的直径小于10纳米。
上述半导体层140的长度为1微米~100微米,宽度为1微米~1毫米,厚度为0.5纳米~100微米。所述沟道156的长度为1微米~100微米,宽度为1微米~1毫米。本技术方案实施例中,所述半导体层140的长度为50微米,宽度为300微米,厚度为25纳米。所述沟道156的长度为40微米,宽度为300微米。该半导体层140包括沿源极151至漏极152方向重叠设置的5层碳纳米管薄膜。每一碳纳米管薄膜的厚度为5纳米。
所述半导体层中的碳纳米管薄膜可通过从碳纳米管阵列中直接拉取并进一步处理获得。该碳纳米管薄膜具有粘性,可以直接黏附于绝缘基板110表面。具体地,根据源极151及漏极152与半导体层140设置的相对位置不同,可以先在绝缘基板110上黏附碳纳米管薄膜,后将源极151及漏极152沿碳纳米管薄膜中碳纳米管排列方向形成于碳纳米管薄膜表面,并使源极151及漏极152间隔设置;也可先将源极151及漏极152分别间隔形成于绝缘基板110表面,再沿源极151至漏极152的方向铺设碳纳米管薄膜,覆盖该源极151及漏极152。本技术方案实施例中,所述源极151和漏极152沿碳纳米管薄膜中碳纳米管的排列方向间隔设置于碳纳米管薄膜的两端,并分别与所述碳纳米管薄膜电接触。
所述源极151、漏极152及栅极120由导电材料组成。优选地,所述源极151、漏极152及栅极120均为一层导电薄膜。该导电薄膜的厚度为0.5纳米~100微米。该导电薄膜的材料可以为金属、合金、铟锡氧化物(ITO)、锑锡氧化物(ATO)、导电银胶、导电聚合物或导电性碳纳米管等。该金属或合金材料可以为铝、铜、钨、钼、金、钛、钕、钯、铯或它们的合金。本实施例中,所述源极151、漏极152及栅极120的材料为金属钯膜,厚度为5纳米。所述金属钯与碳纳米管具有较好的润湿效果。上述源极151及漏极152之间的距离为1微米-100微米。
所述绝缘层130材料为氮化硅、氧化硅等硬性材料或苯并环丁烯(BCB)、聚酯或丙烯酸树脂等柔性材料。该绝缘层130的厚度为5纳米~100微米。本实施例中,所述绝缘层130的材料为氮化硅。可以理解,根据具体的形成工艺不同,上述绝缘层130不必完全覆盖上述源极151、漏极152及半导体层140,只要能保证半导体层140、源极151和漏极152与相对设置的栅极120绝缘即可。
请参见图3,使用时,所述源极151接地,在所述漏极152上施加一电压Vds,在所述栅极120上施一电压Vg,栅极120电压Vg在半导体层140中的沟道156区域中产生电场,并在沟道156区域靠近栅极120的表面处产生感应载流子。随着栅极电压Vg的增加,所述沟道156靠近栅极120的表面处逐渐转变为载流子积累层,当载流子积累到一定程度时,就会在源极151和漏极152之间产生电流。由于半导体性的碳纳米管具有较高的轴向载流子迁移率,且碳纳米管薄膜中的碳纳米管首尾相连并沿从源极151至漏极152的方向排列,故载流子由源极151经半导体层140至漏极152方向传输具有较短的传输路径,从而使获得的薄膜晶体管10具有较大的载流子迁移率及较高的响应速度。
由于本技术方案实施例半导体层140中的碳纳米管具有较好的半导体性,由碳纳米管组成的碳纳米管薄膜沿从源极151至漏极152的方向排列,故载流子在具有较好轴向传输性能的碳纳米管中具有较高的迁移率,故由所述碳纳米管组成的碳纳米管薄膜作为半导体层140,可以使所述薄膜晶体管10具有较大的载流子迁移率,进而提高薄膜晶体管10的响应速度。本技术方案实施例中,所述薄膜晶体管10的载流子迁移率高于10cm2/V-1s-1。开关电流比为1.0×102~1.0×106。
请参阅图4,本技术方案第二实施例提供一种薄膜晶体管20,该薄膜晶体管20为背栅型,其包括一栅极220、一绝缘层230、一半导体层240、一源极251及一漏极252。该薄膜晶体管20设置在一绝缘基板210上。
本技术方案第二实施例薄膜晶体管20的结构与第一实施例中的薄膜晶体管10的结构基本相同,其区别在于:上述栅极220设置于所述绝缘基板210表面;上述绝缘层230设置于该栅极220表面;上述半导体层240设置于该绝缘层230表面,通过绝缘层230与栅极220绝缘设置;上述源极251及漏极252间隔设置并与上述半导体层240电接触,该源极251、漏极252及半导体层240通过绝缘层230与上述栅极220电绝缘。所述半导体层240位于所述源极251和漏极252之间的区域形成一沟道256。
所述源极251及漏极252可以间隔设置于该半导体层240的上表面,此时,源极251、漏极252与栅极220设置于半导体层140的不同面,形成一逆交错型薄膜晶体管20。或者,所述源极251及漏极252可以间隔设置于该半导体层240的下表面,位于绝缘层230与半导体层240之间,此时,源极251、漏极252与栅极220设置于半导体层240的同一面,形成一逆共面型薄膜晶体管20。
本技术方案实施例提供的采用至少两个沿同一方向重叠设置的半导体性碳纳米管薄膜作为半导体层的薄膜晶体管及半导体器件具有以下优点:其一,由于碳纳米管薄膜中的碳纳米管首尾相连且排列方向沿源极至漏极方向排列,故载流子由源极经半导体层至漏极方向传输可具有较短的传输路径,从而有利于获得具有较大的载流子迁移率的薄膜晶体管,进而有利于提高薄膜晶体管的响应速度。其二,由于采用该至少两个碳纳米管薄膜重叠设置作为半导体层,且每一碳纳米管薄膜中碳纳米管之间通过范德华力首尾相连,则碳纳米管薄膜具有较好的韧性及机械强度,可以用于制造柔性的薄膜晶体管。其三,由于碳纳米管薄膜中的碳纳米管的结构在高温下不会受到影响,故由该碳纳米管薄膜组成的半导体层在高温下仍具有较高的载流子迁移率。故该薄膜晶体管可应用于高温领域。其四,由于碳纳米管具有较高的导热系数,且沿同一方向排列的碳纳米管更有利于热量沿该方向的传导,因此,所述碳纳米管薄膜可以有效地将薄膜晶体管工作时所产生的热量导出,从而有利于解决薄膜晶体管集成于大规模集成电路中的散热问题。
另外,本领域技术人员还可在本发明精神内作其它变化,当然这些依据本发明精神所作的变化,都应包含在本发明所要求保护的范围内。
Claims (16)
1.一种薄膜晶体管,包括:
一源极;
一漏极,该漏极与该源极间隔设置;
一半导体层,该半导体层与该源极和漏极电连接;以及
一栅极,该栅极通过一绝缘层与该半导体层、源极及漏极绝缘设置;
其特征在于,该半导体层包括至少两个沿相同方向重叠的碳纳米管薄膜,
每一碳纳米管薄膜包括多个首尾相连且沿同一方向排列的碳纳米管,且至
少部分碳纳米管的排列方向沿源极至漏极方向延伸。
2.如权利要求1所述的薄膜晶体管,其特征在于,所述碳纳米管为半导体性碳纳米管。
3.如权利要求1所述的薄膜晶体管,其特征在于,所述相邻两个碳纳米管薄膜之间通过范德华力紧密结合。
4.如权利要求1所述的薄膜晶体管,其特征在于,所述碳纳米管薄膜进一步包括多个碳纳米管束片段,每个碳纳米管束片段具有大致相等的长度且每个碳纳米管束片段由多个相互平行的碳纳米管束构成,碳纳米管束片段两端通过范德华力首尾相连。
5.如权利要求1所述的薄膜晶体管,其特征在于,所述碳纳米管薄膜的厚度为0.5纳米~100微米。
6.如权利要求1所述的薄膜晶体管,其特征在于,所述碳纳米管薄膜中的碳纳米管为单壁碳纳米管或双壁碳纳米管,该碳纳米管的直径小于10纳米。
7.如权利要求1所述的薄膜晶体管,其特征在于,所述绝缘层设置于所述栅极和半导体层之间。
8.如权利要求1所述的薄膜晶体管,其特征在于,所述绝缘层的材料为氮化硅、氧化硅、苯并环丁烯、聚酯或丙烯酸树脂。
9.如权利要求1所述的薄膜晶体管,其特征在于,所述源极及漏极设置于所述半导体层表面。
10.如权利要求1所述的薄膜晶体管,其特征在于,所述栅极、源极及漏极的材料为金属、合金、铟锡氧化物、锑锡氧化物、导电银胶、导电聚合物或金属性碳纳米管。
11.如权利要求10所述的薄膜晶体管,其特征在于,所述栅极、源极及漏极的材料为钯、铯、铝、铜、钨、钼、金、钛、钕或它们的合金。
12.如权利要求1所述的薄膜晶体管,其特征在于,所述薄膜晶体管设置于一绝缘基板上,其中,所述半导体层设置于该绝缘基板表面,所述源极及漏极间隔设置于所述半导体层表面,所述绝缘层设置于所述半导体层表面,所述栅极设置于所述绝缘层表面,并通过该绝缘层与该半导体层、源极和漏极电绝缘。
13.如权利要求1所述的薄膜晶体管,其特征在于,所述薄膜晶体管设置于一绝缘基板上,其中,所述栅极设置于该绝缘基板表面,所述绝缘层设置于所述栅极表面,所述半导体层设置于所述绝缘层表面,通过所述绝缘层与栅极电绝缘,所述源极及漏极间隔设置并通过绝缘层与上述栅极电绝缘。
14.如权利要求12或13所述的薄膜晶体管,其特征在于,所述绝缘基板的材料为玻璃、石英、陶瓷、金刚石、塑料或树脂。
15.如权利要求1所述的薄膜晶体管,其特征在于,所述薄膜晶体管的载流子迁移率为10~1500cm2/V-1s-1,开关电流比为1.0×102~1.0×106。
16.如权利要求1所述的薄膜晶体管,其特征在于,所述薄膜晶体管进一步包括一沟道,该沟道为所述半导体层位于所述源极和漏极之间的区域,该沟道及半导体层的长度为1微米~100微米,宽度为1微米~1毫米,厚度为0.5纳米~100微米。
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN104944409B (zh) | 2014-03-31 | 2018-03-02 | 清华大学 | 碳纳米管阵列的转移方法及碳纳米管结构的制备方法 |
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CN104973586B (zh) | 2014-04-14 | 2017-06-06 | 清华大学 | 碳纳米管膜的制备方法 |
CN104973587B (zh) | 2014-04-14 | 2017-05-17 | 清华大学 | 碳纳米管膜的制备方法 |
CN104973585B (zh) | 2014-04-14 | 2017-04-05 | 清华大学 | 碳纳米管膜的制备方法 |
CN104973584B (zh) | 2014-04-14 | 2018-03-02 | 清华大学 | 碳纳米管阵列的转移方法及碳纳米管结构的制备方法 |
CN104973583B (zh) | 2014-04-14 | 2017-04-05 | 清华大学 | 碳纳米管阵列的转移方法及碳纳米管结构的制备方法 |
CN105399044B (zh) | 2014-06-13 | 2017-07-07 | 清华大学 | 碳纳米管膜的制备方法 |
CN105271105B (zh) | 2014-06-13 | 2017-01-25 | 清华大学 | 碳纳米管阵列的转移方法及碳纳米管结构的制备方法 |
CN105329872B (zh) | 2014-06-16 | 2017-04-12 | 清华大学 | 碳纳米管阵列的转移方法及碳纳米管结构的制备方法 |
CN105197875B (zh) | 2014-06-19 | 2017-02-15 | 清华大学 | 图案化碳纳米管阵列的制备方法及碳纳米管器件 |
CN105329842B (zh) | 2014-06-18 | 2017-06-06 | 清华大学 | 碳纳米管阵列的转移方法及碳纳米管结构的制备方法 |
CN105338460B (zh) | 2014-07-21 | 2018-05-01 | 清华大学 | 热致发声装置及其制备方法 |
CN105712314B (zh) | 2014-12-05 | 2017-12-01 | 清华大学 | 碳纳米管阵列的制备方法和碳纳米管膜的制备方法 |
US9472773B1 (en) | 2015-12-09 | 2016-10-18 | International Business Machines Corporation | Stacked carbon nanotube multiple threshold device |
Family Cites Families (68)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6423583B1 (en) * | 2001-01-03 | 2002-07-23 | International Business Machines Corporation | Methodology for electrically induced selective breakdown of nanotubes |
US7084507B2 (en) * | 2001-05-02 | 2006-08-01 | Fujitsu Limited | Integrated circuit device and method of producing the same |
JP4207398B2 (ja) * | 2001-05-21 | 2009-01-14 | 富士ゼロックス株式会社 | カーボンナノチューブ構造体の配線の製造方法、並びに、カーボンナノチューブ構造体の配線およびそれを用いたカーボンナノチューブデバイス |
US6814832B2 (en) * | 2001-07-24 | 2004-11-09 | Seiko Epson Corporation | Method for transferring element, method for producing element, integrated circuit, circuit board, electro-optical device, IC card, and electronic appliance |
US6899945B2 (en) * | 2002-03-19 | 2005-05-31 | William Marsh Rice University | Entangled single-wall carbon nanotube solid material and methods for making same |
JP3842159B2 (ja) * | 2002-03-26 | 2006-11-08 | 株式会社半導体エネルギー研究所 | ドーピング装置 |
CN1282216C (zh) * | 2002-09-16 | 2006-10-25 | 清华大学 | 一种灯丝及其制备方法 |
US7051945B2 (en) * | 2002-09-30 | 2006-05-30 | Nanosys, Inc | Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites |
AU2003283973B2 (en) | 2002-09-30 | 2008-10-30 | Oned Material Llc | Large-area nanoenabled macroelectronic substrates and uses therefor |
US7135728B2 (en) * | 2002-09-30 | 2006-11-14 | Nanosys, Inc. | Large-area nanoenabled macroelectronic substrates and uses therefor |
US7067867B2 (en) * | 2002-09-30 | 2006-06-27 | Nanosys, Inc. | Large-area nonenabled macroelectronic substrates and uses therefor |
CN1703730A (zh) | 2002-09-30 | 2005-11-30 | 纳米***公司 | 使用纳米线晶体管的集成显示器 |
CN1208818C (zh) | 2002-10-16 | 2005-06-29 | 中国科学院化学研究所 | 一种阵列碳纳米管薄膜晶体管的制备方法 |
AU2003294588A1 (en) * | 2002-12-09 | 2004-06-30 | Rensselaer Polytechnic Institute | Embedded nanotube array sensor and method of making a nanotube polymer composite |
US7359888B2 (en) * | 2003-01-31 | 2008-04-15 | Hewlett-Packard Development Company, L.P. | Molecular-junction-nanowire-crossbar-based neural network |
US7150865B2 (en) * | 2003-03-31 | 2006-12-19 | Honda Giken Kogyo Kabushiki Kaisha | Method for selective enrichment of carbon nanotubes |
JP4586334B2 (ja) * | 2003-05-07 | 2010-11-24 | ソニー株式会社 | 電界効果型トランジスタ及びその製造方法 |
KR100757615B1 (ko) * | 2003-07-17 | 2007-09-10 | 마츠시타 덴끼 산교 가부시키가이샤 | 전계 효과형 트랜지스터 및 그 제조 방법 |
US20050061496A1 (en) * | 2003-09-24 | 2005-03-24 | Matabayas James Christopher | Thermal interface material with aligned carbon nanotubes |
US7399400B2 (en) * | 2003-09-30 | 2008-07-15 | Nano-Proprietary, Inc. | Nanobiosensor and carbon nanotube thin film transistors |
US6921684B2 (en) * | 2003-10-17 | 2005-07-26 | Intel Corporation | Method of sorting carbon nanotubes including protecting metallic nanotubes and removing the semiconducting nanotubes |
JP4124787B2 (ja) * | 2004-01-15 | 2008-07-23 | 松下電器産業株式会社 | 電界効果トランジスタ及びそれを用いた表示装置 |
TWI231153B (en) * | 2004-02-26 | 2005-04-11 | Toppoly Optoelectronics Corp | Organic electroluminescence display device and its fabrication method |
US7253431B2 (en) * | 2004-03-02 | 2007-08-07 | International Business Machines Corporation | Method and apparatus for solution processed doping of carbon nanotube |
US8158203B2 (en) * | 2004-05-06 | 2012-04-17 | William Marsh Rice University | Methods of attaching or grafting carbon nanotubes to silicon surfaces and composite structures derived therefrom |
US7323730B2 (en) * | 2004-07-21 | 2008-01-29 | Commissariat A L'energie Atomique | Optically-configurable nanotube or nanowire semiconductor device |
US7129097B2 (en) * | 2004-07-29 | 2006-10-31 | International Business Machines Corporation | Integrated circuit chip utilizing oriented carbon nanotube conductive layers |
JP2008511735A (ja) * | 2004-08-27 | 2008-04-17 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | 半導電性パーコレーションネットワーク |
KR101025846B1 (ko) * | 2004-09-13 | 2011-03-30 | 삼성전자주식회사 | 탄소나노튜브 채널을 포함하는 반도체 장치의 트랜지스터 |
US7285501B2 (en) * | 2004-09-17 | 2007-10-23 | Hewlett-Packard Development Company, L.P. | Method of forming a solution processed device |
CN101102838A (zh) * | 2004-11-17 | 2008-01-09 | 海珀里昂催化国际有限公司 | 由单壁碳纳米管制备催化剂载体和负载催化剂的方法 |
US20060194058A1 (en) | 2005-02-25 | 2006-08-31 | Amlani Islamshah S | Uniform single walled carbon nanotube network |
JP4636921B2 (ja) * | 2005-03-30 | 2011-02-23 | セイコーエプソン株式会社 | 表示装置の製造方法、表示装置および電子機器 |
KR100770258B1 (ko) * | 2005-04-22 | 2007-10-25 | 삼성에스디아이 주식회사 | 유기 박막트랜지스터 및 그의 제조 방법 |
US7538040B2 (en) * | 2005-06-30 | 2009-05-26 | Nantero, Inc. | Techniques for precision pattern transfer of carbon nanotubes from photo mask to wafers |
US7687841B2 (en) * | 2005-08-02 | 2010-03-30 | Micron Technology, Inc. | Scalable high performance carbon nanotube field effect transistor |
GB0516401D0 (en) * | 2005-08-09 | 2005-09-14 | Univ Cambridge Tech | Nanorod field-effect transistors |
KR100647699B1 (ko) * | 2005-08-30 | 2006-11-23 | 삼성에스디아이 주식회사 | 나노 반도체 시트, 상기 나노 반도체 시트의 제조방법,상기 나노 반도체 시트를 이용한 박막 트랜지스터의제조방법, 상기 나노 반도체 시트를 이용한 평판표시장치의 제조방법, 박막 트랜지스터, 및 평판 표시장치 |
JP2007073706A (ja) | 2005-09-06 | 2007-03-22 | Seiko Epson Corp | 配線基板、電気光学装置、電子機器、および配線基板の製造方法 |
JP2007123870A (ja) | 2005-09-29 | 2007-05-17 | Matsushita Electric Ind Co Ltd | 平板表示装置およびその製造方法 |
US20070069212A1 (en) * | 2005-09-29 | 2007-03-29 | Matsushita Electric Industrial Co., Ltd. | Flat panel display and method for manufacturing the same |
WO2007089322A2 (en) | 2005-11-23 | 2007-08-09 | William Marsh Rice University | PREPARATION OF THIN FILM TRANSISTORS (TFTs) OR RADIO FREQUENCY IDENTIFICATION (RFID) TAGS OR OTHER PRINTABLE ELECTRONICS USING INK-JET PRINTER AND CARBON NANOTUBE INKS |
CN100462301C (zh) * | 2005-12-09 | 2009-02-18 | 清华大学 | 一种碳纳米管阵列的制备方法 |
US7559653B2 (en) * | 2005-12-14 | 2009-07-14 | Eastman Kodak Company | Stereoscopic display apparatus using LCD panel |
JP4968854B2 (ja) * | 2006-02-28 | 2012-07-04 | 東洋紡績株式会社 | カーボンナノチューブ集合体、カーボンナノチューブ繊維及びカーボンナノチューブ繊維の製造方法 |
JP5029600B2 (ja) * | 2006-03-03 | 2012-09-19 | 富士通株式会社 | カーボンナノチューブを用いた電界効果トランジスタとその製造方法及びセンサ |
EP1991723A2 (en) | 2006-03-03 | 2008-11-19 | The Board Of Trustees Of The University Of Illinois | Methods of making spatially aligned nanotubes and nanotube arrays |
US20070273798A1 (en) * | 2006-05-26 | 2007-11-29 | Silverstein Barry D | High efficiency digital cinema projection system with increased etendue |
US20070273797A1 (en) * | 2006-05-26 | 2007-11-29 | Silverstein Barry D | High efficiency digital cinema projection system with increased etendue |
US7458687B2 (en) * | 2006-05-26 | 2008-12-02 | Eastman Kodak Company | High efficiency digital cinema projection system with increased etendue |
US7714386B2 (en) * | 2006-06-09 | 2010-05-11 | Northrop Grumman Systems Corporation | Carbon nanotube field effect transistor |
US20080134961A1 (en) * | 2006-11-03 | 2008-06-12 | Zhenan Bao | Single-crystal organic semiconductor materials and approaches therefor |
US20080277718A1 (en) * | 2006-11-30 | 2008-11-13 | Mihai Adrian Ionescu | 1T MEMS scalable memory cell |
JP4666270B2 (ja) | 2006-12-18 | 2011-04-06 | 日本電気株式会社 | 半導体装置及びその製造方法 |
US20080173864A1 (en) * | 2007-01-20 | 2008-07-24 | Toshiba America Research, Inc. | Carbon nanotube transistor having low fringe capacitance and low channel resistance |
US7838809B2 (en) * | 2007-02-17 | 2010-11-23 | Ludwig Lester F | Nanoelectronic differential amplifiers and related circuits having carbon nanotubes, graphene nanoribbons, or other related materials |
WO2008114564A1 (ja) * | 2007-02-21 | 2008-09-25 | Brother Kogyo Kabushiki Kaisha | 薄膜トランジスタ及び薄膜トランジスタの製造方法 |
US20080252202A1 (en) * | 2007-04-11 | 2008-10-16 | General Electric Company | Light-emitting device and article |
KR101365411B1 (ko) * | 2007-04-25 | 2014-02-20 | 엘지디스플레이 주식회사 | 박막 트랜지스터의 제조 방법과 액정표시장치의 제조 방법 |
JP2009032894A (ja) | 2007-07-26 | 2009-02-12 | Sharp Corp | 半導体装置の製造方法 |
US20100108988A1 (en) * | 2007-08-29 | 2010-05-06 | New Jersey Institute Of Technology | Nanotube-Based Structure and Method of Forming the Structure |
US8253124B2 (en) * | 2007-09-07 | 2012-08-28 | Nec Corporation | Semiconductor element |
CN101409338A (zh) * | 2007-10-10 | 2009-04-15 | 清华大学 | 锂离子电池负极,其制备方法和应用该负极的锂离子电池 |
US9963781B2 (en) * | 2007-10-29 | 2018-05-08 | Southwest Research Institute | Carbon nanotubes grown on nanostructured flake substrates and methods for production thereof |
US20090159891A1 (en) * | 2007-12-21 | 2009-06-25 | Palo Alto Research Center Incorporated | Modifying a surface in a printed transistor process |
US7612270B1 (en) * | 2008-04-09 | 2009-11-03 | International Business Machines Corporation | Nanoelectromechanical digital inverter |
US8598569B2 (en) * | 2008-04-30 | 2013-12-03 | International Business Machines Corporation | Pentacene-carbon nanotube composite, method of forming the composite, and semiconductor device including the composite |
US20090282802A1 (en) * | 2008-05-15 | 2009-11-19 | Cooper Christopher H | Carbon nanotube yarn, thread, rope, fabric and composite and methods of making the same |
-
2008
- 2008-05-14 CN CN200810067172.5A patent/CN101582449B/zh active Active
-
2009
- 2009-04-02 US US12/384,329 patent/US8101953B2/en active Active
- 2009-05-14 JP JP2009117607A patent/JP5231327B2/ja active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109920913A (zh) * | 2017-12-13 | 2019-06-21 | 北京华碳元芯电子科技有限责任公司 | 晶体管器件、制造晶体管器件的方法及集成电路 |
CN111180583A (zh) * | 2019-10-15 | 2020-05-19 | 北京元芯碳基集成电路研究院 | 晶体管及其制造方法 |
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