CN109326863B - Dual-frequency filtering power divider based on dielectric substrate integrated waveguide - Google Patents

Dual-frequency filtering power divider based on dielectric substrate integrated waveguide Download PDF

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CN109326863B
CN109326863B CN201811121310.3A CN201811121310A CN109326863B CN 109326863 B CN109326863 B CN 109326863B CN 201811121310 A CN201811121310 A CN 201811121310A CN 109326863 B CN109326863 B CN 109326863B
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CN109326863A (en
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华昌洲
陈国军
刘梦
赵启东
靳翔宇
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Dragon Totem Technology Hefei Co ltd
Saiercom Corp
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Ningbo University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/12—Coupling devices having more than two ports
    • H01P5/16—Conjugate devices, i.e. devices having at least one port decoupled from one other port
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/201—Filters for transverse electromagnetic waves
    • H01P1/203—Strip line filters

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Abstract

The invention discloses a double-frequency filtering power divider based on a dielectric substrate integrated waveguide, which comprises a dielectric substrate, a first metal layer attached to the upper surface of the dielectric substrate and a second metal layer attached to the lower surface of the dielectric substrate, wherein a first rectangular opening, a second rectangular opening and a third rectangular opening are formed in the first metal layer; the advantages are possessing filtering and power distribution function, having no compatibility problem, reducing volume of communication system, raising reliability of communication system and reducing design cost of communication system.

Description

Dual-frequency filtering power divider based on dielectric substrate integrated waveguide
Technical Field
The invention relates to a power divider, in particular to a dual-frequency filtering power divider based on a dielectric substrate integrated waveguide.
Background
The waveguide structure is an important feed structure of the microwave circuit, and the transmission stability and precision of the waveguide structure are good and bad, so that the performance of the microwave circuit and the transmission performance of an antenna are directly influenced. However, the conventional waveguide structure is a rectangular waveguide, which has many disadvantages, such as large volume, heavy weight, complex processing technology and troublesome debugging process, and the waveguide structure is often limited by cut-off frequency, which finally results in that the waveguide structure can only be used in some specific scenes, and is expensive in practical application and difficult to maintain. Therefore, since the fifties, some researchers and scholars have begun to search for alternative waveguide structures that can replace the conventional waveguide structures. In 1996, a hybrid circuit structure integrating an NRD and a planar circuit was proposed; on the basis of the above, the Wu Koco professor system of Montreal university, Canada illustrates the integration problem between planar and non-planar circuits, and analyzes the future development trend, thereby proposing a dielectric Substrate-based Waveguide structure, namely, a dielectric Substrate Integrated Waveguide (SIW). With the continuous and intensive research on the dielectric substrate integrated waveguide by researchers, the dielectric substrate integrated waveguide can completely realize the double-frequency filtering function of the traditional rectangular waveguide.
The filter is an indispensable component for controlling the signal spectrum and solving the interference problem, and is also an indispensable important component for separating out a desired frequency band in the radio frequency circuit system. Because of this very important role, filters are widely used in modern wireless communication systems. In recent years, the demand for high performance, small size, easy integration, and low cost filters has grown rapidly. The traditional filter design structure adopts microstrip lines or metal rectangular waveguides, but the traditional filter generally has larger insertion loss and lower selectivity because of large parasitic radiation loss caused by the discontinuity of the microstrip lines and the low quality factor of the microtip resonator. More importantly, the microstrip filter is very sensitive to external interference caused by radiation of other passive devices and active devices in the same substrate. And it has the disadvantages of large volume, low integration level of planar circuit, strict requirement for manufacturing precision and high manufacturing cost. Therefore, the use of the conventional filter is greatly limited. In order to overcome the disadvantages of the conventional microstrip line and metal rectangular surface wave filter, related researchers have proposed and explored a dielectric substrate integrated waveguide-based filter, which is a waveguide structure with compact structure, high selectivity and low insertion loss.
In the design of modern microwave and millimeter wave circuits, a power divider (abbreviated as a power divider) occupies an important position, and particularly in the design of microwave and millimeter wave array antennas, the performance of the array antennas is directly influenced by the quality of the power divider. In a power divider, an input signal is divided into two or more smaller power signals; the power divider has a 3dB equal power division form and an unequal power division form. The traditional power divider can be realized in the forms of T shape, Y shape and Wilkinson type, and the working bandwidth, insertion loss and power dividing ratio of the traditional power divider determine the radiation performance of the array antenna.
Filters and power splitters are essential components of current communication systems. At present, in a communication system, a filter and a power divider are separate components, which results in an increase in volume in the communication system, on the other hand, due to the independent design of the filter and the power divider, in the practical communication system application, the compatibility of the filter and the power divider needs to be jointly debugged, which requires huge manpower and material resources, and the compatibility problem of the filter and the power divider leads to the problems of signal attenuation, interference signal enhancement and the like, thereby reducing the reliability of the communication system.
Therefore, the dual-frequency filtering power divider based on the dielectric substrate integrated waveguide is designed to reduce the volume of a communication system, improve the reliability of the communication system and reduce the design cost of the communication system, and has important significance.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a dual-frequency filtering power divider based on a dielectric substrate integrated waveguide, which has the functions of filtering and power distribution at the same time, has no compatibility problem, can reduce the volume of a communication system, improves the reliability of the communication system, and reduces the design cost of the communication system.
The technical scheme adopted by the invention for solving the technical problems is as follows: a dual-frequency filtering power divider based on a dielectric substrate integrated waveguide comprises a dielectric substrate, a first metal layer and a second metal layer, wherein the first metal layer is attached to the upper surface of the dielectric substrate, the second metal layer is attached to the lower surface of the dielectric substrate, the dielectric substrate is rectangular, the length of a long edge of the dielectric substrate is recorded as L, the length of a wide edge of the dielectric substrate is recorded as D, D =0.7313L, the extending direction of the long edge of the dielectric substrate is taken as the left-right direction, the extending direction of the wide edge is taken as the front-back direction, the first metal layer is rectangular, the two long edges of the first metal layer are respectively flush with the two long edges of the dielectric substrate, the right wide edge of the first metal layer is flush with the right wide edge of the dielectric substrate, the length of the long edge of the first metal layer is 0.8387L, and a first rectangular opening which exposes the dielectric substrate is formed in the first metal layer, A second rectangular opening and a third rectangular opening, the left side of the first rectangular opening is flush with the left wide side of the first metal layer, the distance from the front side of the first rectangular opening to the front long side of the dielectric substrate is 0.1521L, the distance from the rear side of the first rectangular opening to the rear long side of the dielectric substrate is 0.4986L, the distance from the left side of the first rectangular opening to the right side of the first rectangular opening is 0.0922L, the right side of the second rectangular opening is flush with the right wide side of the dielectric substrate, the distance between the left side and the right side of the second rectangular opening is 0.1613L, the rear side of the second rectangular opening is flush with the rear long side of the dielectric substrate, the distance from the front side of the second rectangular opening to the front long side of the dielectric substrate is 0.3657L, the right side of the third rectangular opening is flush with the left side of the second rectangular opening, the distance from the rear side of the third rectangular opening to the rear long side of the medium substrate is 0.1037L, the distance from the front side of the third rectangular opening to the front long side of the medium substrate is 0.4917L, the distance from the left side of the third rectangular opening to the right wide side of the medium substrate is 0.2304L, the third rectangular opening is internally provided with a first rectangular metal block and a second rectangular metal block, the first rectangular metal block and the second rectangular metal block are attached to the surface of the medium substrate, the front side of the first rectangular metal block is flush with the front side of the third rectangular opening, the distance between the rear side of the first rectangular metal block and the front side of the first rectangular metal block is 0.0323L, and the distance between the left side of the first rectangular metal block and the left side of the third rectangular opening is 0.0184L The right side of the first rectangular metal block is flush with the right side of the third rectangular opening, the rear side of the second rectangular metal block is flush with the rear side of the third rectangular opening, the distance between the front side of the second rectangular metal block and the rear side thereof is 0.0323L, the distance between the left side of the second rectangular metal block and the left side of the third rectangular opening is 0.0184L, the right side of the second rectangular metal block is flush with the right side of the third rectangular opening, the upper surface of the dielectric substrate is further provided with an input microstrip line and a first output microstrip line, the input microstrip line is a rectangular metal foil attached to the dielectric substrate, the left side of the input microstrip line is flush with the left wide side of the dielectric substrate, and the distance between the front side of the input microstrip line and the front long side of the dielectric substrate is 0.1751L, the distance between the rear side edge of the input microstrip line and the rear long edge of the dielectric substrate is 0.5217L, the right side edge of the input microstrip line is flush with the right side edge of the first rectangular opening, the first output microstrip line is a rectangular metal foil attached to the dielectric substrate, the distance between the front side edge of the first output microstrip line and the front long edge of the dielectric substrate is 0.5424L, the distance between the rear side edge of the first output microstrip line and the rear long edge of the dielectric substrate is 0.1544L, the left side edge of the first output microstrip line is flush with the left side edge of the third rectangular opening, the right side edge of the first output microstrip line is flush with the right side edge of the second rectangular opening, the second metal layer is rectangular, and the two long edges of the second metal layer are flush with the two long edges of the dielectric substrate respectively, the two widths of the second metal layer are respectively flush with the two widths of the medium substrate, the second metal layer is provided with a fourth rectangular opening and a fifth rectangular opening which expose the medium substrate, the right side of the fourth rectangular opening is flush with the right side wide edge of the medium substrate, the distance between the left side and the right side of the fourth rectangular opening is 0.1613L, the front side of the fourth rectangular opening is flush with the front side long edge of the medium substrate, the distance between the rear side of the fourth rectangular opening and the rear side long edge of the medium substrate is 0.3657L, the right side of the fifth rectangular opening is flush with the left side of the fourth rectangular opening, the distance between the front side of the fifth rectangular opening and the front side long edge of the medium substrate is 0.1037L, and the distance between the rear side of the fifth rectangular opening and the rear side long edge of the medium substrate is 0.1037L, the distance from the left side of the fifth rectangular opening to the right side width of the dielectric substrate is 0.2304L, a third rectangular metal block and a fourth rectangular metal block are arranged in the fifth rectangular opening, the third rectangular metal block and the fourth rectangular metal block are attached to the surface of the dielectric substrate, the front side of the third rectangular metal block is flush with the front side of the fifth rectangular opening, the distance between the rear side of the third rectangular metal block and the front side thereof is 0.0323L, the distance between the left side of the third rectangular metal block and the left side of the fifth rectangular opening is 0.0184L, the right side of the third rectangular metal block is flush with the right side of the fifth rectangular opening, the rear side of the fourth rectangular metal block is flush with the rear side of the fifth rectangular opening, and the distance between the front side of the fourth rectangular metal block and the rear side thereof is 0.0323L, the distance between the left side of the fourth rectangular metal block and the left side of the fifth rectangular opening is 0.0184L, the right side of the fourth rectangular metal block is flush with the right side of the fifth rectangular opening, a second output microstrip line is further arranged on the lower surface of the dielectric substrate, the second output microstrip line is a rectangular metal foil attached to the dielectric substrate, the distance from the front side of the second output microstrip line to the long side of the front side of the dielectric substrate is 0.1544L, the distance from the rear side of the second output microstrip line to the long side of the rear side of the dielectric substrate is 0.5424L, the left side of the second output microstrip line is flush with the left side of the fifth rectangular opening, and the right side of the second output microstrip line is flush with the right side of the fourth rectangular opening; the dielectric substrate is provided with a plurality of cylindrical through holes with the same size, the radius of each cylindrical through hole is 0.0046L, the upper end face of each cylindrical through hole is arranged on the upper end face of the first metal layer, the lower end face of each cylindrical through hole is arranged on the lower end face of the second metal layer, each cylindrical through hole penetrates through the first metal layer, the dielectric substrate and the second metal layer, and each cylindrical through hole is a metalized through hole for connecting the first metal layer and the second metal layer; dividing the plurality of cylindrical through holes into sixteen groups which are respectively marked as a first group of through holes, a second group of through holes, a third group of through holes, a fourth group of through holes, a fifth group of through holes, a sixth group of through holes, a seventh group of through holes, an eighth group of through holes, a ninth group of through holes, a tenth group of through holes, an eleventh group of through holes, a twelfth group of through holes, a thirteenth group of through holes, a fourteenth group of through holes, a fifteenth group of through holes and a sixteenth group of through holes; the first group of through holes comprise 11 cylindrical through holes which are arranged at intervals from left to right, the central connecting line of the 11 cylindrical through holes in the first group of through holes is parallel to the long side of the medium substrate, the distance from the center of the leftmost cylindrical through hole in the 11 cylindrical through holes in the first group of through holes to the long side of the front side of the medium substrate is 0.0795L, the distance from the center of the leftmost cylindrical through hole in the 11 cylindrical through holes in the first group of through holes to the wide side of the left side of the medium substrate is 0.1869L, and the distance from the center of each two adjacent cylindrical through holes in the 11 cylindrical through holes in the first group of through holes is 0.0184L; the second group of through holes comprise 11 cylindrical through holes which are arranged at intervals from left to right, the central connecting line of the 11 cylindrical through holes in the second group of through holes is parallel to the long side of the medium substrate, the distance from the center of the leftmost cylindrical through hole in the 11 cylindrical through holes in the second group of through holes to the long side of the front side of the medium substrate is 0.0979L, the distance from the center of the leftmost cylindrical through hole in the 11 cylindrical through holes in the second group of through holes to the wide side of the left side of the medium substrate is 0.4078L, and the distance from the center of each two adjacent cylindrical through holes in the 11 cylindrical through holes in the second group of through holes is 0.0184L; the third group of through holes comprise 11 cylindrical through holes which are arranged at intervals from left to right, the central connecting line of the 11 cylindrical through holes in the third group of through holes is parallel to the long side of the medium substrate, the distance from the center of the leftmost cylindrical through hole in the 11 cylindrical through holes in the third group of through holes to the long side of the front side of the medium substrate is 0.0691L, the distance from the center of the leftmost cylindrical through hole in the 11 cylindrical through holes in the third group of through holes to the wide side of the left side of the medium substrate is 0.6288L, and the distance from the center of each two adjacent cylindrical through holes in the 11 cylindrical through holes in the third group of through holes is 0.0184L; the fourth group of through holes comprise 11 cylindrical through holes which are arranged at intervals from left to right, the central connecting line of the 11 cylindrical through holes in the fourth group of through holes is parallel to the long side of the medium substrate, the distance from the center of the leftmost cylindrical through hole in the 11 cylindrical through holes in the fourth group of through holes to the long side of the rear side of the medium substrate is 0.2371L, the distance from the center of the leftmost cylindrical through hole in the 11 cylindrical through holes in the fourth group of through holes to the wide side of the left side of the medium substrate is 0.1869L, and the distance from the center of each two adjacent cylindrical through holes in the 11 cylindrical through holes in the fourth group of through holes is 0.0184L; the fifth group of through holes comprise 11 cylindrical through holes which are arranged at intervals from left to right, the central connecting line of the 11 cylindrical through holes in the fifth group of through holes is parallel to the long side of the medium substrate, the distance from the center of the leftmost cylindrical through hole in the 11 cylindrical through holes in the fifth group of through holes to the long side of the rear side of the medium substrate is 0.2555L, the distance from the center of the leftmost cylindrical through hole in the 11 cylindrical through holes in the fifth group of through holes to the wide side of the left side of the medium substrate is 0.4078L, and the distance from the center of each two adjacent cylindrical through holes in the 11 cylindrical through holes in the fifth group of through holes is 0.0184L; the sixth group of through holes comprise 11 cylindrical through holes which are arranged at intervals from left to right, the central connecting line of the 11 cylindrical through holes in the sixth group of through holes is parallel to the long side of the medium substrate, the distance from the center of the leftmost cylindrical through hole in the 11 cylindrical through holes in the sixth group of through holes to the long side of the rear side of the medium substrate is 0.0691L, the distance from the center of the leftmost cylindrical through hole in the 11 cylindrical through holes in the sixth group of through holes to the wide side of the left side of the medium substrate is 0.6288L, and the distance from the center of each two adjacent cylindrical through holes in the 11 cylindrical through holes in the sixth group of through holes is 0.0184L; the seventh group of through holes comprises 3 cylindrical through holes which are arranged at intervals from left to right, the central connecting line of the 3 cylindrical through holes in the seventh group of through holes is parallel to the long side of the medium substrate, the distance from the center of the leftmost cylindrical through hole in the 3 cylindrical through holes in the seventh group of through holes to the long side of the rear side of the medium substrate is 0.3657L, the distance from the center of the leftmost cylindrical through hole in the 3 cylindrical through holes in the seventh group of through holes to the wide side of the left side of the medium substrate is 0.7719L, and the distance from the center of each two adjacent cylindrical through holes in the 3 cylindrical through holes in the seventh group of through holes is 0.0184L; the eighth group of through holes comprise 4 cylindrical through holes which are sequentially arranged from front to back at intervals, the central connecting line of the 4 cylindrical through holes in the eighth group of through holes is parallel to the wide side of the medium substrate, the distance from the center of the most front cylindrical through hole in the 4 cylindrical through holes in the eighth group of through holes to the long side of the front side of the medium substrate is 0.0853L, the distance from the center of the most front cylindrical through hole in the 4 cylindrical through holes in the eighth group of through holes to the wide side of the left side of the medium substrate is 0.1728L, and the distance from the center of each two adjacent cylindrical through holes in the 4 cylindrical through holes in the eighth group of through holes is 0.0184L; the ninth group of through holes comprise 14 cylindrical through holes which are arranged at intervals from front to back, the central connecting line of the 14 cylindrical through holes in the ninth group of through holes is parallel to the wide side of the medium substrate, the distance from the center of the most front cylindrical through hole in the 14 cylindrical through holes in the ninth group of through holes to the long side of the front side of the medium substrate is 0.2442L, the distance from the center of the most front cylindrical through hole in the 14 cylindrical through holes in the ninth group of through holes to the wide side of the left side of the medium substrate is 0.1728L, and the distance from the center of every two adjacent cylindrical through holes in the 14 cylindrical through holes in the ninth group of through holes is 0.0184L; the tenth group of through holes comprise 5 cylindrical through holes which are sequentially arranged from front to back at intervals, the central connecting line of the 5 cylindrical through holes in the tenth group of through holes is parallel to the wide edge of the medium substrate, the distance from the center of the most front cylindrical through hole in the 5 cylindrical through holes in the tenth group of through holes to the long edge of the front side of the medium substrate is 0.0795L, the distance from the center of the most front cylindrical through hole in the 5 cylindrical through holes in the tenth group of through holes to the wide edge of the left side of the medium substrate is 0.3896L, and the distance from the center of each two adjacent cylindrical through holes in the 5 cylindrical through holes in the tenth group of through holes to the center of the two adjacent cylindrical through holes is 0.0184L; the eleventh group of through holes comprise 13 cylindrical through holes which are arranged at intervals in sequence from front to back, the central connecting line of the 13 cylindrical through holes in the eleventh group of through holes is parallel to the wide side of the medium substrate, the distance from the center of the most front cylindrical through hole in the 13 cylindrical through holes in the eleventh group of through holes to the long side of the front side of the medium substrate is 0.2680L, the distance from the center of the most front cylindrical through hole in the 13 cylindrical through holes in the eleventh group of through holes to the wide side of the left side of the medium substrate is 0.3896L, and the distance from the center of each two adjacent cylindrical through holes in the 13 cylindrical through holes in the eleventh group of through holes is 0.0184L; the twelfth group of through holes comprise 14 cylindrical through holes which are arranged at intervals from front to back, the central connecting line of the 14 cylindrical through holes in the twelfth group of through holes is parallel to the wide side of the medium substrate, the distance from the center of the most front cylindrical through hole in the 14 cylindrical through holes in the twelfth group of through holes to the long side of the front side of the medium substrate is 0.0691L, the distance from the center of the most front cylindrical through hole in the 14 cylindrical through holes in the twelfth group of through holes to the wide side of the left side of the medium substrate is 0.6104L, and the distance from the center of every two adjacent cylindrical through holes in the 14 cylindrical through holes in the twelfth group of through holes is 0.0184L; the thirteenth group of through holes comprises 14 cylindrical through holes which are arranged at intervals in sequence from front to back, the central connecting line of the 14 cylindrical through holes in the thirteenth group of through holes is parallel to the wide side of the medium substrate, the distance from the center of the most front cylindrical through hole in the 14 cylindrical through holes in the thirteenth group of through holes to the long side of the front side of the medium substrate is 0.4256L, the distance from the center of the most front cylindrical through hole in the 14 cylindrical through holes in the thirteenth group of through holes to the wide side of the left side of the medium substrate is 0.6104L, and the distance from the center of each two adjacent cylindrical through holes in the 14 cylindrical through holes in the thirteenth group of through holes is 0.0184L; the fourteenth group of through holes comprises 4 cylindrical through holes which are sequentially arranged from front to back at intervals, the central connecting line of the 4 cylindrical through holes in the fourteenth group of through holes is parallel to the wide edge of the medium substrate, the distance from the center of the most front cylindrical through hole in the 4 cylindrical through holes in the fourteenth group of through holes to the long edge of the front side of the medium substrate is 0.0703L, the distance from the center of the most front cylindrical through hole in the 4 cylindrical through holes in the fourteenth group of through holes to the wide edge of the left side of the medium substrate is 0.8272L, and the distance from the center of each two adjacent cylindrical through holes in the 4 cylindrical through holes in the fourteenth group of through holes is 0.0184L; the fifteenth group of through holes comprises 17 cylindrical through holes which are arranged at intervals in sequence from front to back, the central connecting line of the 17 cylindrical through holes in the fifteenth group of through holes is parallel to the wide edge of the medium substrate, the distance from the center of the most front cylindrical through hole in the 17 cylindrical through holes in the fifteenth group of through holes to the front side long edge of the medium substrate is 0.2177L, the distance from the center of the most front cylindrical through hole in the 17 cylindrical through holes in the fifteenth group of through holes to the left side wide edge of the medium substrate is 0.8272L, and the distance from the center of each two adjacent cylindrical through holes in the 17 cylindrical through holes in the fifteenth group of through holes is 0.0184L; the sixteenth group of through holes comprises 4 cylindrical through holes which are sequentially arranged from front to back at intervals, the central connecting line of the 4 cylindrical through holes in the sixteenth group of through holes is parallel to the wide edge of the medium substrate, the distance from the center of the most front cylindrical through hole in the 4 cylindrical through holes in the sixteenth group of through holes to the long edge of the front side of the medium substrate is 0.6058L, the distance from the center of the most front cylindrical through hole in the 4 cylindrical through holes in the sixteenth group of through holes to the wide edge of the left side of the medium substrate is 0.8272L, and the central distance between every two adjacent cylindrical through holes in the 4 cylindrical through holes in the sixteenth group of through holes is 0.0184L.
The thickness of the dielectric substrate is 0.0117L, and the thickness of the first metal layer, the thickness of the second metal layer, the thickness of the first rectangular metal block, the thickness of the second rectangular metal block, the thickness of the third rectangular metal block, the thickness of the fourth rectangular metal block, the thickness of the input microstrip line, the thickness of the first output microstrip line and the thickness of the second output microstrip line are all 0.035 mm.
Compared with the prior art, the microstrip patch antenna has the advantages that the input energy of the upper stage is transmitted in the maximum efficiency through the input microstrip line, and the first group of through holes, the second group of through holes, the third group of through holes, the fourth group of through holes, the fifth group of through holes, the sixth group of through holes, the seventh group of through holes, the eighth group of through holes, the ninth group of through holes, the tenth group of through holes, the eleventh group of through holes, the twelfth group of through holes and the thirteenth group of through holes. The area surrounded by the fourteenth group of through holes, the fifteenth group of through holes and the sixteenth group of through holes on the dielectric substrate is equivalent to a band-pass filter circuit, wherein the first group of through holes, the eighth group of through holes, the ninth group of through holes, the fourth group of through holes, the tenth group of through holes and the eleventh group of through holes are matched to determine the capacitance inductance value in the band-pass filter circuit and ensure good filtering performance, the tenth group of through holes and the eleventh group of through holes are matched, the twelfth group of through holes and the thirteenth group of through holes are matched to realize the power transmission function and simultaneously realize mode conversion, ensure the occurrence of double frequency bands and the even distribution of power to the first output microstrip line and the second output microstrip line, and the length of the seventh group of through holes and the distance between the seventh group of through holes and the left side edge and the side edge of the dielectric substrate ensure that the power divider has good performance, so the invention has the functions of filtering and power division, the method has no compatibility problem, can reduce the volume of the communication system, improve the reliability of the communication system and reduce the design cost of the communication system.
Drawings
Fig. 1 is a top view of a dual-frequency filtering power divider based on a dielectric substrate integrated waveguide according to the present invention;
fig. 2 is a bottom view of a dual-band filtering power divider based on a dielectric substrate integrated waveguide according to the present invention.
FIG. 3 is a simulation graph of the S parameter of a dual-frequency filtering power divider based on a dielectric substrate integrated waveguide according to the present invention;
fig. 4 shows the voltage standing wave ratio of the dual-frequency filtering power divider based on the dielectric substrate integrated waveguide according to the present invention.
Detailed Description
The invention is described in further detail below with reference to the accompanying examples.
The first embodiment is as follows: as shown in the figure, the dual-frequency filtering power divider based on the dielectric substrate integrated waveguide comprises a dielectric substrate 1, a first metal layer 2 attached to the upper surface of the dielectric substrate 1 and a second metal layer 3 attached to the lower surface of the dielectric substrate 1, wherein the dielectric substrate 1 is rectangular, the length of the long edge of the dielectric substrate 1 is denoted as L, the length of the wide edge is denoted as D, D =0.7313L, the extending direction of the long edge of the dielectric substrate 1 is taken as the left-right direction, the extending direction of the wide edge is taken as the front-back direction, the first metal layer 2 is rectangular, the two long edges of the first metal layer 2 are respectively flush with the two long edges of the dielectric substrate 1, the right wide edge of the first metal layer 2 is flush with the right wide edge of the dielectric substrate 1, the length of the long edge of the first metal layer 2 is 0.8387L, a first rectangular opening 4, a second rectangular opening 5 and a third rectangular opening 6 which expose the dielectric substrate 1 are formed on, the left side of the first rectangular opening 4 is flush with the left wide side of the first metal layer 2, the distance from the front side of the first rectangular opening 4 to the front long side of the dielectric substrate 1 is 0.1521L, the distance from the rear side of the first rectangular opening 4 to the rear long side of the dielectric substrate 1 is 0.4986L, the distance from the left side of the first rectangular opening 4 to the right side of the first rectangular opening 4 is 0.0922L, the right side of the second rectangular opening 5 is flush with the right wide side of the dielectric substrate 1, the distance between the left side and the right side of the second rectangular opening 5 is 0.1613L, the rear side of the second rectangular opening 5 is flush with the rear long side of the dielectric substrate 1, the distance from the front side of the second rectangular opening 5 to the front long side of the dielectric substrate 1 is 0.3657L, the right side of the third rectangular opening 6 is flush with the left long side of the second rectangular opening 5, the distance from the rear side of the third rectangular opening 6 to the rear long side of the dielectric substrate 1 is 0.1037L, the distance from the front side of the third rectangular opening 6 to the long side of the front side of the dielectric substrate 1 is 0.4917L, the distance from the left side of the third rectangular opening 6 to the wide side of the right side of the dielectric substrate 1 is 0.2304L, a first rectangular metal block 7 and a second rectangular metal block 8 are arranged in the third rectangular opening 6, the first rectangular metal block 7 and the second rectangular metal block 8 are attached to the surface of the dielectric substrate 1, the front side of the first rectangular metal block 7 is flush with the front side of the third rectangular opening 6, the distance between the rear side of the first rectangular metal block 7 and the front side thereof is 0.0323L, the distance between the left side of the first rectangular metal block 7 and the left side of the third rectangular opening 6 is 0.0184L, the right side of the first rectangular metal block 7 is flush with the right side of the third rectangular opening 6, the rear side of the second rectangular metal block 8 is flush with the rear side of the third rectangular opening 6, the distance between the front side of the second rectangular metal block 8 and the rear side thereof is 0.0323L, the distance between the left side of the second rectangular metal block 8 and the left side of the third rectangular opening 6 is 0.0184L, the right side of the second rectangular metal block 8 is flush with the right side of the third rectangular opening 6, the upper surface of the dielectric substrate 1 is further provided with an input microstrip line 9 and a first output microstrip line 10, the input microstrip line 9 is a rectangular metal foil attached to the dielectric substrate 1, the left side of the input microstrip line 9 is flush with the left wide side of the dielectric substrate 1, the distance between the front side of the input microstrip line 9 and the front long side of the dielectric substrate 1 is 0.1751L, the distance between the rear side of the input microstrip line 9 and the rear long side of the dielectric substrate 1 is 0.5217L, the right side of the input microstrip line 9 is flush with the right side of the first rectangular opening 4, the first output microstrip line 10 is a rectangular metal foil attached to the dielectric substrate 1, the distance from the front side of the first output microstrip line 10 to the front long side of the dielectric substrate 1 is 0.5424L, the distance from the rear side of the first output microstrip line 10 to the rear long side of the dielectric substrate 1 is 0.1544L, the left side of the first output microstrip line 10 is flush with the left side of the third rectangular opening 6, the right side of the first output microstrip line 10 is flush with the right side of the second rectangular opening 5, the second metal layer 3 is rectangular, the two long sides of the second metal layer 3 are respectively flush with the two long sides of the dielectric substrate 1, the two widths of the second metal layer 3 are respectively flush with the two widths of the dielectric substrate 1, the second metal layer 3 is provided with a fourth rectangular opening 11 and a fifth rectangular opening 12 which expose the dielectric substrate 1, the right side of the fourth rectangular opening 11 is flush with the right wide side of the dielectric substrate 1, the distance between the left side and the right side of the fourth rectangular opening 11 is 0.1613L, the front side of the fourth rectangular opening 11 is flush with the front long side of the dielectric substrate 1, the distance from the rear side of the fourth rectangular opening 11 to the rear long side of the dielectric substrate 1 is 0.3657L, the right side of the fifth rectangular opening 12 is flush with the left side of the fourth rectangular opening 11, the distance from the front side of the fifth rectangular opening 12 to the front long side of the dielectric substrate 1 is 0.1037L, the distance from the rear side of the fifth rectangular opening 12 to the rear long side of the dielectric substrate 1 is 0.1037L, the distance from the left side of the fifth rectangular opening 12 to the right wide side of the dielectric substrate 1 is 0.2304L, the fifth rectangular opening 12 is internally provided with a third rectangular metal block 13 and a fourth rectangular metal block 14, the third rectangular metal block 13 and the fourth rectangular metal block 14 are attached to the surface of the dielectric substrate 1, the front side of the third rectangular metal block 13 is flush with the front side of the fifth rectangular opening 12, the distance between the rear side of the third rectangular metal block 13 and the front side thereof is 0.0323L, the distance between the left side of the third rectangular metal block 13 and the left side of the fifth rectangular opening 12 is 0.0184L, the right side of the third rectangular metal block 13 is flush with the right side of the fifth rectangular opening 12, the rear side of the fourth rectangular metal block 14 is flush with the rear side of the fifth rectangular opening 12, the distance between the front side of the fourth rectangular metal block 14 and the rear side thereof is 0.0323L, the distance between the left side of the fourth rectangular metal block 14 and the left side of the fifth rectangular opening 12 is 0.0184L, the right side of the fourth rectangular metal block 14 is flush with the right side of the fifth rectangular opening 12, the lower surface of the dielectric substrate 1 is further provided with a second output microstrip line 15, the second output microstrip line 15 is a rectangular metal foil attached to the dielectric substrate 1, the distance from the front side of the second output microstrip line 15 to the front side of the dielectric substrate 1 is 0.1544L, the distance from the rear side of the second output microstrip line 15 to the rear long side of the dielectric substrate 1 is 0.5424L, the left side edge of the second output microstrip line 15 is flush with the left side edge of the fifth rectangular opening 12, and the right side edge of the second output microstrip line 15 is flush with the right side edge of the fourth rectangular opening 11;
a plurality of cylindrical through holes with the same size are formed in the dielectric substrate 1, the radius of each cylindrical through hole is 0.0046L, the upper end face of each cylindrical through hole is arranged on the upper end face of the first metal layer 2, the lower end face of each cylindrical through hole is arranged on the lower end face of the second metal layer 3, each cylindrical through hole penetrates through the first metal layer 2, the dielectric substrate 1 and the second metal layer 3, and each cylindrical through hole is a metalized through hole for connecting the first metal layer 2 and the second metal layer 3; dividing the plurality of cylindrical through holes into sixteen groups, which are respectively marked as a first group of through holes 16, a second group of through holes 17, a third group of through holes 18, a fourth group of through holes 19, a fifth group of through holes 20, a sixth group of through holes 21, a seventh group of through holes 22, an eighth group of through holes 23, a ninth group of through holes 24, a tenth group of through holes 25, an eleventh group of through holes 26, a twelfth group of through holes 27, a thirteenth group of through holes 28, a fourteenth group of through holes 29, a fifteenth group of through holes 30 and a sixteenth group of through holes 31; the first group of through holes 16 comprise 11 cylindrical through holes which are arranged at intervals from left to right, the central connecting line of the 11 cylindrical through holes in the first group of through holes 16 is parallel to the long side of the dielectric substrate 1, the distance from the center of the leftmost cylindrical through hole in the 11 cylindrical through holes in the first group of through holes 16 to the long side of the front side of the dielectric substrate 1 is 0.0795L, the distance from the center of the leftmost cylindrical through hole in the 11 cylindrical through holes in the first group of through holes 16 to the wide side of the left side of the dielectric substrate 1 is 0.1869L, and the distance from the center of each two adjacent cylindrical through holes in the 11 cylindrical through holes in the first group of through holes 16 is 0.0184L; the second group of through holes 17 comprise 11 cylindrical through holes which are arranged at intervals in sequence from left to right, the central connecting line of the 11 cylindrical through holes in the second group of through holes 17 is parallel to the long side of the dielectric substrate 1, the distance from the center of the leftmost cylindrical through hole in the 11 cylindrical through holes in the second group of through holes 17 to the long side of the front side of the dielectric substrate 1 is 0.0979L, the distance from the center of the leftmost cylindrical through hole in the 11 cylindrical through holes in the second group of through holes 17 to the wide side of the left side of the dielectric substrate 1 is 0.4078L, and the distance from the center of each two adjacent cylindrical through holes in the 11 cylindrical through holes in the second group of through holes 17 is 0.0184L; the third group of through holes 18 comprise 11 cylindrical through holes which are arranged at intervals from left to right, the central connecting line of the 11 cylindrical through holes in the third group of through holes 18 is parallel to the long side of the dielectric substrate 1, the distance from the center of the leftmost cylindrical through hole in the 11 cylindrical through holes in the third group of through holes 18 to the long side of the front side of the dielectric substrate 1 is 0.0691L, the distance from the center of the leftmost cylindrical through hole in the 11 cylindrical through holes in the third group of through holes 18 to the wide side of the left side of the dielectric substrate 1 is 0.6288L, and the distance from the center of each two adjacent cylindrical through holes in the 11 cylindrical through holes in the third group of through holes 18 is 0.0184L; the fourth group of through holes 19 comprises 11 cylindrical through holes which are arranged at intervals in sequence from left to right, the central connecting line of the 11 cylindrical through holes in the fourth group of through holes 19 is parallel to the long side of the medium substrate 1, the distance from the center of the leftmost cylindrical through hole in the 11 cylindrical through holes in the fourth group of through holes 19 to the long side of the rear side of the medium substrate 1 is 0.2371L, the distance from the center of the leftmost cylindrical through hole in the 11 cylindrical through holes in the fourth group of through holes 19 to the wide side of the left side of the medium substrate 1 is 0.1869L, and the distance from the center of each two adjacent cylindrical through holes in the 11 cylindrical through holes in the fourth group of through holes 19 is 0.0184L; the fifth group of through holes 20 comprises 11 cylindrical through holes which are arranged at intervals from left to right, the central connecting line of the 11 cylindrical through holes in the fifth group of through holes 20 is parallel to the long side of the dielectric substrate 1, the distance from the center of the leftmost cylindrical through hole in the 11 cylindrical through holes in the fifth group of through holes 20 to the long side of the rear side of the dielectric substrate 1 is 0.2555L, the distance from the center of the leftmost cylindrical through hole in the 11 cylindrical through holes in the fifth group of through holes 20 to the wide side of the left side of the dielectric substrate 1 is 0.4078L, and the distance from the center of each two adjacent cylindrical through holes in the 11 cylindrical through holes in the fifth group of through holes 20 is 0.0184L; the sixth group of through holes 21 comprises 11 cylindrical through holes which are arranged at intervals in sequence from left to right, the central connecting line of the 11 cylindrical through holes in the sixth group of through holes 21 is parallel to the long side of the dielectric substrate 1, the distance from the center of the leftmost cylindrical through hole in the 11 cylindrical through holes in the sixth group of through holes 21 to the long side of the rear side of the dielectric substrate 1 is 0.0691L, the distance from the center of the leftmost cylindrical through hole in the 11 cylindrical through holes in the sixth group of through holes 21 to the wide side of the left side of the dielectric substrate 1 is 0.6288L, and the distance from the center of each two adjacent cylindrical through holes in the 11 cylindrical through holes in the sixth group of through holes 21 is 0.0184L; the seventh group of through holes 22 comprises 3 cylindrical through holes which are arranged at intervals in sequence from left to right, the central connecting line of the 3 cylindrical through holes in the seventh group of through holes 22 is parallel to the long side of the dielectric substrate 1, the distance from the center of the leftmost cylindrical through hole in the 3 cylindrical through holes in the seventh group of through holes 22 to the long side of the rear side of the dielectric substrate 1 is 0.3657L, the distance from the center of the leftmost cylindrical through hole in the 3 cylindrical through holes in the seventh group of through holes 22 to the wide side of the left side of the dielectric substrate 1 is 0.7719L, and the distance from the center of each two adjacent cylindrical through holes in the 3 cylindrical through holes in the seventh group of through holes 22 is 0.0184L; the eighth group of through holes 23 comprises 4 cylindrical through holes which are arranged at intervals in sequence from front to back, the central connecting line of the 4 cylindrical through holes in the eighth group of through holes 23 is parallel to the wide side of the dielectric substrate 1, the distance from the center of the most front cylindrical through hole in the 4 cylindrical through holes in the eighth group of through holes 23 to the long side of the front side of the dielectric substrate 1 is 0.0853L, the distance from the center of the most front cylindrical through hole in the 4 cylindrical through holes in the eighth group of through holes 23 to the wide side of the left side of the dielectric substrate 1 is 0.1728L, and the distance from the center of each two adjacent cylindrical through holes in the 4 cylindrical through holes in the eighth group of through holes 23 is 0.0184L; the ninth group of through holes 24 comprises 14 cylindrical through holes which are arranged at intervals in sequence from front to back, the central connecting line of 14 cylindrical through holes in the ninth group of through holes 24 is parallel to the wide side of the medium substrate 1, the distance from the center of the most front cylindrical through hole in the 14 cylindrical through holes in the ninth group of through holes 24 to the long side of the front side of the medium substrate 1 is 0.2442L, the distance from the center of the most front cylindrical through hole in the 14 cylindrical through holes in the ninth group of through holes 24 to the wide side of the left side of the medium substrate 1 is 0.1728L, and the distance from the center of each two adjacent cylindrical through holes in the 14 cylindrical through holes in the ninth group of through holes 24 is 0.0184L; the tenth group of through holes 25 comprises 5 cylindrical through holes arranged at intervals in sequence from front to back, the central connecting line of the 5 cylindrical through holes in the tenth group of through holes 25 is parallel to the wide side of the dielectric substrate 1, the distance from the center of the most front cylindrical through hole in the 5 cylindrical through holes in the tenth group of through holes 25 to the long side of the front side of the dielectric substrate 1 is 0.0795L, the distance from the center of the most front cylindrical through hole in the 5 cylindrical through holes in the tenth group of through holes 25 to the wide side of the left side of the dielectric substrate 1 is 0.3896L, and the distance from the center of each two adjacent cylindrical through holes in the 5 cylindrical through holes in the tenth group of through holes 25 is 0.0184L; the eleventh group of through holes 26 comprises 13 cylindrical through holes which are arranged at intervals in sequence from front to back, the central connecting line of the 13 cylindrical through holes in the eleventh group of through holes 26 is parallel to the wide side of the dielectric substrate 1, the distance from the center of the most front cylindrical through hole in the 13 cylindrical through holes in the eleventh group of through holes 26 to the long side of the front side of the dielectric substrate 1 is 0.2680L, the distance from the center of the most front cylindrical through hole in the 13 cylindrical through holes in the eleventh group of through holes 26 to the wide side of the left side of the dielectric substrate 1 is 0.3896L, and the distance from the center of each two adjacent cylindrical through holes in the 13 cylindrical through holes in the eleventh group of through holes 26 is 0.0184L; the twelfth group of through holes 27 comprises 14 cylindrical through holes which are arranged at intervals in sequence from front to back, the central connecting line of 14 cylindrical through holes in the twelfth group of through holes 27 is parallel to the wide side of the medium substrate 1, the distance from the center of the most front cylindrical through hole in the 14 cylindrical through holes in the twelfth group of through holes 27 to the long side of the front side of the medium substrate 1 is 0.0691L, the distance from the center of the most front cylindrical through hole in the 14 cylindrical through holes in the twelfth group of through holes 27 to the wide side of the left side of the medium substrate 1 is 0.6104L, and the distance from the center of each two adjacent cylindrical through holes in the 14 cylindrical through holes in the twelfth group of through holes 27 is 0.0184L; the thirteenth group of through holes 28 comprises 14 cylindrical through holes arranged at intervals in sequence from front to back, the central connecting line of 14 cylindrical through holes in the thirteenth group of through holes 28 is parallel to the wide side of the dielectric substrate 1, the distance from the center of the most forward cylindrical through hole in the 14 cylindrical through holes in the thirteenth group of through holes 28 to the long side of the front side of the dielectric substrate 1 is 0.4256L, the distance from the center of the most forward cylindrical through hole in the 14 cylindrical through holes in the thirteenth group of through holes 28 to the wide side of the left side of the dielectric substrate 1 is 0.6104L, and the distance from the center of each two adjacent cylindrical through holes in the 14 cylindrical through holes in the thirteenth group of through holes 28 is 0.0184L; the fourteenth group of through holes 29 comprises 4 cylindrical through holes which are arranged at intervals in a front-to-rear sequence, the central connecting line of the 4 cylindrical through holes in the fourteenth group of through holes 29 is parallel to the wide side of the dielectric substrate 1, the distance from the center of the most front cylindrical through hole in the 4 cylindrical through holes in the fourteenth group of through holes 29 to the long side of the front side of the dielectric substrate 1 is 0.0703L, the distance from the center of the most front cylindrical through hole in the 4 cylindrical through holes in the fourteenth group of through holes 29 to the wide side of the left side of the dielectric substrate 1 is 0.8272L, and the distance from the center of each two adjacent cylindrical through holes in the 4 cylindrical through holes in the fourteenth group of through holes 29 is 0.0184L; the fifteenth group of through holes 30 comprises 17 cylindrical through holes which are arranged at intervals in sequence from front to back, the central connecting line of the 17 cylindrical through holes in the fifteenth group of through holes 30 is parallel to the wide side of the dielectric substrate 1, the distance from the center of the most front cylindrical through hole in the 17 cylindrical through holes in the fifteenth group of through holes 30 to the long side of the front side of the dielectric substrate 1 is 0.2177L, the distance from the center of the most front cylindrical through hole in the 17 cylindrical through holes in the fifteenth group of through holes 30 to the wide side of the left side of the dielectric substrate 1 is 0.8272L, and the distance from the center of each two adjacent cylindrical through holes in the 17 cylindrical through holes in the fifteenth group of through holes 30 is 0.0184L; the sixteenth group of through holes 31 includes 4 cylindrical through holes arranged at intervals in the order from front to back, the center connecting line of the 4 cylindrical through holes in the sixteenth group of through holes 31 is parallel to the wide side of the dielectric substrate 1, the distance from the center of the most forward cylindrical through hole in the 4 cylindrical through holes in the sixteenth group of through holes 31 to the long side of the front side of the dielectric substrate 1 is 0.6058L, the distance from the center of the most forward cylindrical through hole in the 4 cylindrical through holes in the sixteenth group of through holes 31 to the wide side of the left side of the dielectric substrate 1 is 0.8272L, and the distance from the center of each two adjacent cylindrical through holes in the 4 cylindrical through holes in the sixteenth group of through holes 31 is 0.0184L.
In this embodiment, the thickness of the dielectric substrate 1 is 0.0117L, and the thickness of the first metal layer 2, the thickness of the second metal layer 3, the thickness of the first rectangular metal block 7, the thickness of the second rectangular metal block 8, the thickness of the third rectangular metal block 13, the thickness of the fourth rectangular metal block 14, the thickness of the input microstrip line 9, the thickness of the first output microstrip line 10, and the thickness of the second output microstrip line 15 are all 0.035 mm.
In this example, L =43.3 mm.
Fig. 3 shows a simulation curve of the S parameter of the dual-band filtering power divider based on the dielectric substrate integrated waveguide, and fig. 4 shows a voltage standing wave of the dual-band filtering power divider based on the dielectric substrate integrated waveguide. In fig. 3, S11 is an input reflection coefficient from the first input microstrip line to the first output microstrip line of the dual-band filtering power divider based on the dielectric substrate integrated waveguide, that is, an input return loss according to the present invention; s21 is a forward transmission coefficient, i.e., gain, from the first input microstrip line to the first output microstrip line of the dual-band filtering power divider based on the dielectric substrate integrated waveguide of the present invention; s31 is a forward transmission coefficient, i.e., gain, from the first input microstrip line to the second output microstrip line of the dual-band filtering power divider based on the dielectric substrate integrated waveguide of the present invention. Analysis of FIG. 3 reveals that: the working frequency of the dual-frequency filtering power divider based on the dielectric substrate integrated waveguide is between 5GHz and 20GHz, and as can be seen from a curve chart of S11, the return loss of the first input microstrip line is basically greater than 20dB, and the matching is good; as can be seen from the graphs of S21 and S31, the curves of S21 and S31 are almost coincident, which indicates that the power of the first output microstrip line and the power of the second output microstrip line are equal, and the power divider has good distribution characteristics for equally dividing the power divider. Analysis of FIG. 4 reveals that: in the filtering frequency band of the dual-frequency filtering power divider based on the dielectric substrate integrated waveguide, the voltage standing wave ratio VSWR is less than 1.5, the isolation degree of the first output microstrip line and the second output microstrip line is good, and the bisection characteristic of the first output microstrip line and the second output microstrip line is good.

Claims (2)

1. The double-frequency filtering power divider based on the dielectric substrate integrated waveguide is characterized by comprising a dielectric substrate, a first metal layer attached to the upper surface of the dielectric substrate and a second metal layer attached to the lower surface of the dielectric substrate, wherein the dielectric substrate is rectangular, the length of a long edge of the dielectric substrate is L, the length of a wide edge is D, D =0.7313L, the extending direction of the long edge of the dielectric substrate is taken as the left-right direction, the extending direction of the wide edge is taken as the front-back direction, the first metal layer is rectangular, the two long edges of the first metal layer are respectively flush with the two long edges of the dielectric substrate, the right wide edge of the first metal layer is flush with the right wide edge of the dielectric substrate, the length of the long edge of the first metal layer is 0.8387L, and a first rectangular opening exposing the dielectric substrate is formed in the first metal layer, A second rectangular opening and a third rectangular opening, the left side of the first rectangular opening is flush with the left wide side of the first metal layer, the distance from the front side of the first rectangular opening to the front long side of the dielectric substrate is 0.1521L, the distance from the rear side of the first rectangular opening to the rear long side of the dielectric substrate is 0.4986L, the distance from the left side of the first rectangular opening to the right side of the first rectangular opening is 0.0922L, the right side of the second rectangular opening is flush with the right wide side of the dielectric substrate, the distance between the left side and the right side of the second rectangular opening is 0.1613L, the rear side of the second rectangular opening is flush with the rear long side of the dielectric substrate, the distance from the front side of the second rectangular opening to the front long side of the dielectric substrate is 0.3657L, the right side of the third rectangular opening is flush with the left side of the second rectangular opening, the distance from the rear side of the third rectangular opening to the rear long side of the medium substrate is 0.1037L, the distance from the front side of the third rectangular opening to the front long side of the medium substrate is 0.4917L, the distance from the left side of the third rectangular opening to the right wide side of the medium substrate is 0.2304L, the third rectangular opening is internally provided with a first rectangular metal block and a second rectangular metal block, the first rectangular metal block and the second rectangular metal block are attached to the surface of the medium substrate, the front side of the first rectangular metal block is flush with the front side of the third rectangular opening, the distance between the rear side of the first rectangular metal block and the front side of the first rectangular metal block is 0.0323L, and the distance between the left side of the first rectangular metal block and the left side of the third rectangular opening is 0.0184L The right side of the first rectangular metal block is flush with the right side of the third rectangular opening, the rear side of the second rectangular metal block is flush with the rear side of the third rectangular opening, the distance between the front side of the second rectangular metal block and the rear side thereof is 0.0323L, the distance between the left side of the second rectangular metal block and the left side of the third rectangular opening is 0.0184L, the right side of the second rectangular metal block is flush with the right side of the third rectangular opening, the upper surface of the dielectric substrate is further provided with an input microstrip line and a first output microstrip line, the input microstrip line is a rectangular metal foil attached to the dielectric substrate, the left side of the input microstrip line is flush with the left wide side of the dielectric substrate, and the distance between the front side of the input microstrip line and the front long side of the dielectric substrate is 0.1751L, the distance between the rear side edge of the input microstrip line and the rear long edge of the dielectric substrate is 0.5217L, the right side edge of the input microstrip line is flush with the right side edge of the first rectangular opening, the first output microstrip line is a rectangular metal foil attached to the dielectric substrate, the distance between the front side edge of the first output microstrip line and the front long edge of the dielectric substrate is 0.5424L, the distance between the rear side edge of the first output microstrip line and the rear long edge of the dielectric substrate is 0.1544L, the left side edge of the first output microstrip line is flush with the left side edge of the third rectangular opening, the right side edge of the first output microstrip line is flush with the right side edge of the second rectangular opening, the second metal layer is rectangular, and the two long edges of the second metal layer are flush with the two long edges of the dielectric substrate respectively, the two widths of the second metal layer are respectively flush with the two widths of the medium substrate, the second metal layer is provided with a fourth rectangular opening and a fifth rectangular opening which expose the medium substrate, the right side of the fourth rectangular opening is flush with the right side wide edge of the medium substrate, the distance between the left side and the right side of the fourth rectangular opening is 0.1613L, the front side of the fourth rectangular opening is flush with the front side long edge of the medium substrate, the distance between the rear side of the fourth rectangular opening and the rear side long edge of the medium substrate is 0.3657L, the right side of the fifth rectangular opening is flush with the left side of the fourth rectangular opening, the distance between the front side of the fifth rectangular opening and the front side long edge of the medium substrate is 0.1037L, and the distance between the rear side of the fifth rectangular opening and the rear side long edge of the medium substrate is 0.1037L, the distance from the left side of the fifth rectangular opening to the right side width of the dielectric substrate is 0.2304L, a third rectangular metal block and a fourth rectangular metal block are arranged in the fifth rectangular opening, the third rectangular metal block and the fourth rectangular metal block are attached to the surface of the dielectric substrate, the front side of the third rectangular metal block is flush with the front side of the fifth rectangular opening, the distance between the rear side of the third rectangular metal block and the front side thereof is 0.0323L, the distance between the left side of the third rectangular metal block and the left side of the fifth rectangular opening is 0.0184L, the right side of the third rectangular metal block is flush with the right side of the fifth rectangular opening, the rear side of the fourth rectangular metal block is flush with the rear side of the fifth rectangular opening, and the distance between the front side of the fourth rectangular metal block and the rear side thereof is 0.0323L, the distance between the left side of the fourth rectangular metal block and the left side of the fifth rectangular opening is 0.0184L, the right side of the fourth rectangular metal block is flush with the right side of the fifth rectangular opening, a second output microstrip line is further arranged on the lower surface of the dielectric substrate, the second output microstrip line is a rectangular metal foil attached to the dielectric substrate, the distance from the front side of the second output microstrip line to the long side of the front side of the dielectric substrate is 0.1544L, the distance from the rear side of the second output microstrip line to the long side of the rear side of the dielectric substrate is 0.5424L, the left side of the second output microstrip line is flush with the left side of the fifth rectangular opening, and the right side of the second output microstrip line is flush with the right side of the fourth rectangular opening; the dielectric substrate is provided with a plurality of cylindrical through holes with the same size, the radius of each cylindrical through hole is 0.0046L, the upper end face of each cylindrical through hole is arranged on the upper end face of the first metal layer, the lower end face of each cylindrical through hole is arranged on the lower end face of the second metal layer, each cylindrical through hole penetrates through the first metal layer, the dielectric substrate and the second metal layer, and each cylindrical through hole is a metalized through hole for connecting the first metal layer and the second metal layer; dividing the plurality of cylindrical through holes into sixteen groups which are respectively marked as a first group of through holes, a second group of through holes, a third group of through holes, a fourth group of through holes, a fifth group of through holes, a sixth group of through holes, a seventh group of through holes, an eighth group of through holes, a ninth group of through holes, a tenth group of through holes, an eleventh group of through holes, a twelfth group of through holes, a thirteenth group of through holes, a fourteenth group of through holes, a fifteenth group of through holes and a sixteenth group of through holes; the first group of through holes comprise 11 cylindrical through holes which are arranged at intervals from left to right, the central connecting line of the 11 cylindrical through holes in the first group of through holes is parallel to the long side of the medium substrate, the distance from the center of the leftmost cylindrical through hole in the 11 cylindrical through holes in the first group of through holes to the long side of the front side of the medium substrate is 0.0795L, the distance from the center of the leftmost cylindrical through hole in the 11 cylindrical through holes in the first group of through holes to the wide side of the left side of the medium substrate is 0.1869L, and the distance from the center of each two adjacent cylindrical through holes in the 11 cylindrical through holes in the first group of through holes is 0.0184L; the second group of through holes comprise 11 cylindrical through holes which are arranged at intervals from left to right, the central connecting line of the 11 cylindrical through holes in the second group of through holes is parallel to the long side of the medium substrate, the distance from the center of the leftmost cylindrical through hole in the 11 cylindrical through holes in the second group of through holes to the long side of the front side of the medium substrate is 0.0979L, the distance from the center of the leftmost cylindrical through hole in the 11 cylindrical through holes in the second group of through holes to the wide side of the left side of the medium substrate is 0.4078L, and the distance from the center of each two adjacent cylindrical through holes in the 11 cylindrical through holes in the second group of through holes is 0.0184L; the third group of through holes comprise 11 cylindrical through holes which are arranged at intervals from left to right, the central connecting line of the 11 cylindrical through holes in the third group of through holes is parallel to the long side of the medium substrate, the distance from the center of the leftmost cylindrical through hole in the 11 cylindrical through holes in the third group of through holes to the long side of the front side of the medium substrate is 0.0691L, the distance from the center of the leftmost cylindrical through hole in the 11 cylindrical through holes in the third group of through holes to the wide side of the left side of the medium substrate is 0.6288L, and the distance from the center of each two adjacent cylindrical through holes in the 11 cylindrical through holes in the third group of through holes is 0.0184L; the fourth group of through holes comprise 11 cylindrical through holes which are arranged at intervals from left to right, the central connecting line of the 11 cylindrical through holes in the fourth group of through holes is parallel to the long side of the medium substrate, the distance from the center of the leftmost cylindrical through hole in the 11 cylindrical through holes in the fourth group of through holes to the long side of the rear side of the medium substrate is 0.2371L, the distance from the center of the leftmost cylindrical through hole in the 11 cylindrical through holes in the fourth group of through holes to the wide side of the left side of the medium substrate is 0.1869L, and the distance from the center of each two adjacent cylindrical through holes in the 11 cylindrical through holes in the fourth group of through holes is 0.0184L; the fifth group of through holes comprise 11 cylindrical through holes which are arranged at intervals from left to right, the central connecting line of the 11 cylindrical through holes in the fifth group of through holes is parallel to the long side of the medium substrate, the distance from the center of the leftmost cylindrical through hole in the 11 cylindrical through holes in the fifth group of through holes to the long side of the rear side of the medium substrate is 0.2555L, the distance from the center of the leftmost cylindrical through hole in the 11 cylindrical through holes in the fifth group of through holes to the wide side of the left side of the medium substrate is 0.4078L, and the distance from the center of each two adjacent cylindrical through holes in the 11 cylindrical through holes in the fifth group of through holes is 0.0184L; the sixth group of through holes comprise 11 cylindrical through holes which are arranged at intervals from left to right, the central connecting line of the 11 cylindrical through holes in the sixth group of through holes is parallel to the long side of the medium substrate, the distance from the center of the leftmost cylindrical through hole in the 11 cylindrical through holes in the sixth group of through holes to the long side of the rear side of the medium substrate is 0.0691L, the distance from the center of the leftmost cylindrical through hole in the 11 cylindrical through holes in the sixth group of through holes to the wide side of the left side of the medium substrate is 0.6288L, and the distance from the center of each two adjacent cylindrical through holes in the 11 cylindrical through holes in the sixth group of through holes is 0.0184L; the seventh group of through holes comprises 3 cylindrical through holes which are arranged at intervals from left to right, the central connecting line of the 3 cylindrical through holes in the seventh group of through holes is parallel to the long side of the medium substrate, the distance from the center of the leftmost cylindrical through hole in the 3 cylindrical through holes in the seventh group of through holes to the long side of the rear side of the medium substrate is 0.3657L, the distance from the center of the leftmost cylindrical through hole in the 3 cylindrical through holes in the seventh group of through holes to the wide side of the left side of the medium substrate is 0.7719L, and the distance from the center of each two adjacent cylindrical through holes in the 3 cylindrical through holes in the seventh group of through holes is 0.0184L; the eighth group of through holes comprise 4 cylindrical through holes which are sequentially arranged from front to back at intervals, the central connecting line of the 4 cylindrical through holes in the eighth group of through holes is parallel to the wide side of the medium substrate, the distance from the center of the most front cylindrical through hole in the 4 cylindrical through holes in the eighth group of through holes to the long side of the front side of the medium substrate is 0.0853L, the distance from the center of the most front cylindrical through hole in the 4 cylindrical through holes in the eighth group of through holes to the wide side of the left side of the medium substrate is 0.1728L, and the distance from the center of each two adjacent cylindrical through holes in the 4 cylindrical through holes in the eighth group of through holes is 0.0184L; the ninth group of through holes comprise 14 cylindrical through holes which are arranged at intervals from front to back, the central connecting line of the 14 cylindrical through holes in the ninth group of through holes is parallel to the wide side of the medium substrate, the distance from the center of the most front cylindrical through hole in the 14 cylindrical through holes in the ninth group of through holes to the long side of the front side of the medium substrate is 0.2442L, the distance from the center of the most front cylindrical through hole in the 14 cylindrical through holes in the ninth group of through holes to the wide side of the left side of the medium substrate is 0.1728L, and the distance from the center of every two adjacent cylindrical through holes in the 14 cylindrical through holes in the ninth group of through holes is 0.0184L; the tenth group of through holes comprise 5 cylindrical through holes which are sequentially arranged from front to back at intervals, the central connecting line of the 5 cylindrical through holes in the tenth group of through holes is parallel to the wide edge of the medium substrate, the distance from the center of the most front cylindrical through hole in the 5 cylindrical through holes in the tenth group of through holes to the long edge of the front side of the medium substrate is 0.0795L, the distance from the center of the most front cylindrical through hole in the 5 cylindrical through holes in the tenth group of through holes to the wide edge of the left side of the medium substrate is 0.3896L, and the distance from the center of each two adjacent cylindrical through holes in the 5 cylindrical through holes in the tenth group of through holes to the center of the two adjacent cylindrical through holes is 0.0184L; the eleventh group of through holes comprise 13 cylindrical through holes which are arranged at intervals in sequence from front to back, the central connecting line of the 13 cylindrical through holes in the eleventh group of through holes is parallel to the wide side of the medium substrate, the distance from the center of the most front cylindrical through hole in the 13 cylindrical through holes in the eleventh group of through holes to the long side of the front side of the medium substrate is 0.2680L, the distance from the center of the most front cylindrical through hole in the 13 cylindrical through holes in the eleventh group of through holes to the wide side of the left side of the medium substrate is 0.3896L, and the distance from the center of each two adjacent cylindrical through holes in the 13 cylindrical through holes in the eleventh group of through holes is 0.0184L; the twelfth group of through holes comprise 14 cylindrical through holes which are arranged at intervals from front to back, the central connecting line of the 14 cylindrical through holes in the twelfth group of through holes is parallel to the wide side of the medium substrate, the distance from the center of the most front cylindrical through hole in the 14 cylindrical through holes in the twelfth group of through holes to the long side of the front side of the medium substrate is 0.0691L, the distance from the center of the most front cylindrical through hole in the 14 cylindrical through holes in the twelfth group of through holes to the wide side of the left side of the medium substrate is 0.6104L, and the distance from the center of every two adjacent cylindrical through holes in the 14 cylindrical through holes in the twelfth group of through holes is 0.0184L; the thirteenth group of through holes comprises 14 cylindrical through holes which are arranged at intervals in sequence from front to back, the central connecting line of the 14 cylindrical through holes in the thirteenth group of through holes is parallel to the wide side of the medium substrate, the distance from the center of the most front cylindrical through hole in the 14 cylindrical through holes in the thirteenth group of through holes to the long side of the front side of the medium substrate is 0.4256L, the distance from the center of the most front cylindrical through hole in the 14 cylindrical through holes in the thirteenth group of through holes to the wide side of the left side of the medium substrate is 0.6104L, and the distance from the center of each two adjacent cylindrical through holes in the 14 cylindrical through holes in the thirteenth group of through holes is 0.0184L; the fourteenth group of through holes comprises 4 cylindrical through holes which are sequentially arranged from front to back at intervals, the central connecting line of the 4 cylindrical through holes in the fourteenth group of through holes is parallel to the wide edge of the medium substrate, the distance from the center of the most front cylindrical through hole in the 4 cylindrical through holes in the fourteenth group of through holes to the long edge of the front side of the medium substrate is 0.0703L, the distance from the center of the most front cylindrical through hole in the 4 cylindrical through holes in the fourteenth group of through holes to the wide edge of the left side of the medium substrate is 0.8272L, and the distance from the center of each two adjacent cylindrical through holes in the 4 cylindrical through holes in the fourteenth group of through holes is 0.0184L; the fifteenth group of through holes comprises 17 cylindrical through holes which are arranged at intervals in sequence from front to back, the central connecting line of the 17 cylindrical through holes in the fifteenth group of through holes is parallel to the wide edge of the medium substrate, the distance from the center of the most front cylindrical through hole in the 17 cylindrical through holes in the fifteenth group of through holes to the front side long edge of the medium substrate is 0.2177L, the distance from the center of the most front cylindrical through hole in the 17 cylindrical through holes in the fifteenth group of through holes to the left side wide edge of the medium substrate is 0.8272L, and the distance from the center of each two adjacent cylindrical through holes in the 17 cylindrical through holes in the fifteenth group of through holes is 0.0184L; the sixteenth group of through holes comprises 4 cylindrical through holes which are sequentially arranged from front to back at intervals, the central connecting line of the 4 cylindrical through holes in the sixteenth group of through holes is parallel to the wide edge of the medium substrate, the distance from the center of the most front cylindrical through hole in the 4 cylindrical through holes in the sixteenth group of through holes to the long edge of the front side of the medium substrate is 0.6058L, the distance from the center of the most front cylindrical through hole in the 4 cylindrical through holes in the sixteenth group of through holes to the wide edge of the left side of the medium substrate is 0.8272L, and the central distance between every two adjacent cylindrical through holes in the 4 cylindrical through holes in the sixteenth group of through holes is 0.0184L.
2. The dual-band filtering power divider based on the dielectric substrate integrated waveguide of claim 1, wherein the thickness of the dielectric substrate is 0.0117L, and the thickness of the first metal layer, the thickness of the second metal layer, the thickness of the first rectangular metal block, the thickness of the second rectangular metal block, the thickness of the third rectangular metal block, the thickness of the fourth rectangular metal block, the thickness of the input microstrip line, the thickness of the first output microstrip line, and the thickness of the second output microstrip line are all 0.035 mm.
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