CN106374179A - Via-hole-loaded half-mode substrate integrated waveguide power divider - Google Patents

Via-hole-loaded half-mode substrate integrated waveguide power divider Download PDF

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Publication number
CN106374179A
CN106374179A CN201610839270.0A CN201610839270A CN106374179A CN 106374179 A CN106374179 A CN 106374179A CN 201610839270 A CN201610839270 A CN 201610839270A CN 106374179 A CN106374179 A CN 106374179A
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China
Prior art keywords
waveguide
power divider
transmission line
half module
distribution
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CN201610839270.0A
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CN106374179B (en
Inventor
林澍
毕延迪
毛宇
王竣
刘璐
刘冠君
杜天尧
赵志华
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Harbin Institute of Technology
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Harbin Institute of Technology
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00Coupling devices of the waveguide type
    • H01P5/12Coupling devices having more than two ports

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  • Variable-Direction Aerials And Aerial Arrays (AREA)
  • Non-Reversible Transmitting Devices (AREA)

Abstract

The invention provides a via-hole-loaded half-mode substrate integrated waveguide power divider. The power divider adopts a two-sided printed circuit board structure, and the two sides are in mirror symmetry; and the power divider comprises an input transmission line part, a full-mode waveguide transmission part, a full-mode waveguide allocation part, a half-mode waveguide transmission part and an output transmission line part. According to the power divider, by introducing the via hole loading in a proper position, impedance matching is improved while port reflection is reduced; and in addition, a full-mode waveguide structure in the output port is improved into a half-mode waveguide structure, so that the purpose of reducing dimension is achieved.

Description

The half module substrate integrated wave guide power divider that a kind of via loads
Technical field
The present invention relates to the power divider in a kind of design for microwave and millimeter wave assembly with system, more particularly, to one Plant the half module substrate integrated wave guide power divider that via loads.
Background technology
Microwave and millimeter wave power splitter has obtained substantial amounts of application in the feeder line of microwave and millimeter wave antenna and millimeter wave instrument, It is one of feeder system critical component, and particularly in microwave&millimeter-wave IC, the feed of aerial array needs Use low-loss, wide band power splitter.Conventional microstrip power divider its characteristic on mid frequency is ideal, but one There is frequency deviation in denier, the performance of whole power splitter all can be deteriorated, thus affecting the performance of whole system.Using substrate integration wave-guide skill Art can produce high q value, low-loss, wide band power divider, and reduces processing cost and technology difficulty, and in this base Half module substrate integrated wave guide structure on plinth more can its half little volume so as to being more suitable for microwave and millimeter wave assembly and being The design of system.
Substrate integration wave-guide (substrate integrated waveguide, siw) is a kind of real on dielectric substrate Now guided wave structure formed similar to metal rectangular waveguide characteristic, because this structure has Low emissivity, filter with low insertion loss, miniaturization, easily The advantages of integrated, become the focus of research, be also widely used in the middle of the design of microwave passive component.By means of printing electricity Road technique, the low cost batch production of the high performance microwave passive device based on medium integrated waveguide is possibly realized.
The present invention proposes the half module substrate integrated wave guide power divider that a kind of via loads, and test result shows, should Power divider can realize relatively stable constant power distribution output, this power splitter in the working frequency range of 7.86-9.06ghz Can be widely used in the middle of the communication system in the range of respective frequencies.
Content of the invention
It is an object of the invention to overcoming shortcoming and the deficiency of prior art, there is provided the half-module chip that a kind of via loads Integrated waveguide power allotter, realizes relatively stable constant power distribution output.
The purpose of the present invention is achieved through the following technical solutions: the half module substrate integrated wave guide power that a kind of via loads divides Orchestration, described power divider is double-sided printed-circuit board structure, two sides specular, including input transmission line portions, Quan Mo Waveguide part, full mould waveguide distribution portion, half module waveguide part and output transmission line portions;
Described input transmission line portions are located at top section, are made up of rectangle and isosceles trapezoid gradual change balance microstrip line;
Described full mould waveguide part is the rectangular waveguide positioned at epimere, and this rectangular waveguide contains both sides metallization via Array;
Described full mould waveguide distribution portion is two rectangular waveguides positioned at middle epimere, containing both sides metallization arrays of vias With three distribution vias, described three distribution vias are to distribute via one, distribution via two and distribution via three;
Described half module waveguide part is located at stage casing, by four half module waveguides containing only side metallization arrays of vias Composition arranged in parallel;
Described output transmission line portions are located at hypomere, by the balance micro-strip of the rectangle of right-angled trapezium gradual change, rectangle and bending Line forms.
Further, described distribution via one and distribution via three are symmetrical with regard to dielectric substrate broadside centrage, point Join the underface that via two is located at dielectric substrate broadside centrage.
Further, dielectric substrate thickness is 1.6mm, and relative dielectric constant is 4.4.
Further, the dielectric substrate width w of described power divider is 40mm, and dielectric substrate length l is 67.4mm, defeated Enter transmission line rectangle balance microstrip line width wiFor 2mm, input transmission line trapezoidal balance microstrip line base width ws is 3.2mm, Half module transmission waveguide width woFor 1.75mm, full mould transmission waveguide length ainFor 13.6mm, half module transmission waveguide spacing gap is 2mm, full mould distribution waveguide and long back gauge w of substrateg1For 2.5mm, half module transmission waveguide and long back gauge w of substrateg2For 1.5mm, Output transmission line right-angled trapezium balance microstrip line base width ws1For 2.5mm, input transmission line rectangle balance microstrip line length l1 For 5mm, input transmission line trapezoidal balance microstrip line length l2For 4.5mm, full mould transmission waveguide transmission segment length l3For 3.8mm, entirely Mould distributes waveguide segment length l4For 19.6mm, half module transmission waveguide length l5For 18mm, export transmission line rectangle balance microstrip line long Degree l6For 12mm, distribute via one and full mould distributes lateral separation k of waveguide sidewalls1For 4.85mm, distribute via one and divide with full mould Join the fore-and-aft distance t of waveguide sidewalls1For 4mm, distribute via two and full mould distributes the fore-and-aft distance t of waveguide sidewalls2For 4.8mm, divide Join via Radius r1For 0.25mm, distribute via two radius r2For 0.15mm.
The power divider based on half module substrate integrated wave guide structure for the present invention mainly passes through basic waveguide y type knot Cascaded, to improve impedance matching and to reduce port reflection by introducing via in position and loading, and by delivery outlet Full mould waveguiding structure is improved to half module waveguiding structure, to reach the purpose of size reduction with this.
Brief description
The mock-up of the half module substrate integrated wave guide power divider that Fig. 1: via loads;
The structure chart of the half module substrate integrated wave guide power divider that Fig. 2: via loads;
Fig. 3: the s parameters simulation result of half module siw quartering power divider;
Fig. 4: half module siw quartering power divider experimental result;
Specific embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete Ground description is it is clear that described embodiment is only a part of embodiment of the present invention, rather than whole embodiments.Based on this Embodiment in invention, the every other reality that those of ordinary skill in the art are obtained under the premise of not making creative work Apply example, broadly fall into the scope of protection of the invention.
The half module substrate integrated wave guide power divider loading in conjunction with Fig. 1, a kind of via of present invention protection, described power divides Orchestration is double-sided printed-circuit board structure, two sides specular, includes input transmission line portions, full mould waveguide part, entirely Mould waveguide distribution portion, half module waveguide part and output transmission line portions;
Described input transmission line portions are located at top section, are made up of rectangle and isosceles trapezoid gradual change balance microstrip line;
Described full mould waveguide part is the rectangular waveguide positioned at epimere, and this rectangular waveguide contains both sides metallization via Array;
Described full mould waveguide distribution portion is two rectangular waveguides positioned at middle epimere, containing both sides metallization arrays of vias With three distribution vias, described three distribution vias are to distribute via one, distribution via two and distribution via three;
Described half module waveguide part is located at stage casing, by four half module waveguides containing only side metallization arrays of vias Composition arranged in parallel;
Described output transmission line portions are located at hypomere, by the balance micro-strip of the rectangle of right-angled trapezium gradual change, rectangle and bending Line forms.
Described distribution via one and distribution via three are symmetrical with regard to dielectric substrate broadside centrage, distribute via two Underface in dielectric substrate broadside centrage.Described dielectric substrate thickness is 1.6mm, and relative dielectric constant is 4.4.
A kind of structure chart of the half module substrate integrated wave guide power divider loading in conjunction with Fig. 2, via, described power distribution The dielectric substrate width w of device is 40mm, and dielectric substrate length l is 67.4mm, inputs transmission line rectangle balance microstrip line width wi For 2mm, input transmission line trapezoidal balance microstrip line base width ws is 3.2mm, half module transmission waveguide width woFor 1.75mm, entirely Mould transmission waveguide length ainFor 13.6mm, half module transmission waveguide spacing gap is 2mm, and full mould distributes waveguide and the long back gauge of substrate wg1For 2.5mm, half module transmission waveguide and long back gauge w of substrateg2For 1.5mm, export transmission line right-angled trapezium balance microstrip line bottom Hem width degree ws1For 2.5mm, input transmission line rectangle balance microstrip line length l1For 5mm, input the trapezoidal balance microstrip line of transmission line Length l2For 4.5mm, full mould transmission waveguide transmission segment length l3For 3.8mm, full mould distribution waveguide segment length l4For 19.6mm, half Mould transmission waveguide length l5For 18mm, export transmission line rectangle balance microstrip line length l6For 12mm, distribute via one and divide with full mould Join lateral separation k of waveguide sidewalls1For 4.85mm, distribute via one and full mould distributes the fore-and-aft distance t of waveguide sidewalls1For 4mm, Distribution via two and full mould distribute the fore-and-aft distance t of waveguide sidewalls2For 4.8mm, distribute via Radius r1For 0.25mm, distribute Via two radius r2For 0.15mm.Referring specifically to table 1.
The structural parameters (unit: mm) of the half module substrate integrated wave guide power divider that table 1 via loads
In conjunction with Fig. 3 and Fig. 4, Fig. 3 gives the s parameters simulation of the half module substrate integrated wave guide power divider of via loading As a result, it can be seen that designed power divider is in the working frequency range of 7.79-9.86ghz | s11| < -10db, Match condition in band is good, it can be seen that the output port of this power divider has compares in above-mentioned working frequency range Stable power distribution output: transmission coefficient | s21|, | s51| stablize between -6.94~-8.48db in band;Transmission coefficient | s31|, | s41| in band, partition coefficient is stablized between -6.37~-7.42db, and passband fluctuation is less.It is right that whole power splitter adopts Claim structure, transmission coefficient | s21| with | s51| curve essentially coincides, transmission coefficient | s31| with | s41| curve essentially coincides, whole work( Rate allotter is functional.Fig. 4 gives the s parameter testing knot of the half module substrate integrated wave guide power divider of via loading Really, it can be seen that in the working frequency range of 7.86-9.06ghz, the power distribution of output port is relatively stable, The port 2 (port 1 is input port) counting from left to right from Fig. 2 is i.e. | s21| fluctuate between -8.38~-10.42db;Port 3 I.e. | s31| fluctuate between -8.19~-10.23db;Port 4 is | s41| fluctuate between -8.23~-10.18db;Port 5 is | s51| Fluctuate between -7.98~-10.02db.
The half module substrate integrated wave guide power divider above a kind of via provided by the present invention being loaded has been carried out in detail Thin introduce, specific case used herein is set forth to the principle of the present invention and embodiment, the saying of above example Bright it is only intended to help and understands the method for the present invention and its core concept;Simultaneously for one of ordinary skill in the art, foundation The thought of the present invention, all will change in specific embodiments and applications, and in sum, this specification content is not It is interpreted as limitation of the present invention.

Claims (4)

1. the half module substrate integrated wave guide power divider that a kind of via loads, described power divider is double-sided printed-circuit board Structure, two sides specular it is characterised in that: include input transmission line portions, full mould waveguide part, full mould waveguide distribution Partly, half module waveguide part and output transmission line portions;
Described input transmission line portions are located at top section, are made up of rectangle and isosceles trapezoid gradual change balance microstrip line;
Described full mould waveguide part is the rectangular waveguide positioned at epimere, and this rectangular waveguide contains both sides metallization via battle array Row;
Described full mould waveguide distribution portion is two rectangular waveguides positioned at middle epimere, containing both sides metallization arrays of vias and three Individual distribution via, described three distribution vias are distribution via one, distribution via two and distribute via three;
Described half module waveguide part is located at stage casing, and the half module waveguide being contained only metallization arrays of vias in side by four is parallel Rearrange;
Described output transmission line portions are located at hypomere, by the balance microstrip line group of the rectangle of right-angled trapezium gradual change, rectangle and bending Become.
2. power divider according to claim 1 it is characterised in that described distribution via one and distribution via three with regard to Dielectric substrate broadside centrage is symmetrical, and distribution via two is located at the underface of dielectric substrate broadside centrage.
3., it is characterised in that dielectric substrate thickness is 1.6mm, dielectric relatively is normal for power divider according to claim 2 Number is 4.4.
4., it is characterised in that dielectric substrate width w is 40mm, dielectric substrate is long for power divider according to claim 1 Degree l is 67.4mm, inputs transmission line rectangle balance microstrip line width wiFor 2mm, input transmission line trapezoidal balance microstrip line base Width ws is 3.2mm, half module transmission waveguide width woFor 1.75mm, full mould transmission waveguide length ainFor 13.6mm, half module transmission Waveguide spacing gap is 2mm, and full mould distributes waveguide and long back gauge w of substrateg1For 2.5mm, half module transmission waveguide and the long back gauge of substrate From wg2For 1.5mm, export transmission line right-angled trapezium balance microstrip line base width ws1For 2.5mm, input transmission line rectangle balance Micro-strip line length l1For 5mm, input transmission line trapezoidal balance microstrip line length l2For 4.5mm, full mould transmission waveguide transmission segment length l3For 3.8mm, full mould distribution waveguide segment length l4For 19.6mm, half module transmission waveguide length l5For 18mm, export transmission line rectangle Balance microstrip line length l6For 12mm, distribute via one and full mould distributes lateral separation k of waveguide sidewalls1For 4.85mm, distributed The full mould of Kong Yiyu distributes the fore-and-aft distance t of waveguide sidewalls1For 4mm, distribute via two and full mould distribute waveguide sidewalls longitudinally away from From t2For 4.8mm, distribute via Radius r1For 0.25mm, distribute via two radius r2For 0.15mm.
CN201610839270.0A 2016-09-21 2016-09-21 A kind of half module substrate integrated wave guide power divider of via hole load Active CN106374179B (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110661072A (en) * 2019-11-04 2020-01-07 中国电子科技集团公司第三十六研究所 Ka-band waveguide power divider
CN112563711A (en) * 2020-11-23 2021-03-26 杭州电子科技大学 Rectangular patch-half-mode substrate integrated waveguide hybrid 90-degree directional coupler
CN113871829A (en) * 2021-09-27 2021-12-31 上海交通大学 Half-mode and ridge-added coaxial substrate integrated waveguide interconnection device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2796136Y (en) * 2005-05-30 2006-07-12 东南大学 Substrate integrated waveguide broad band multiple path power distributor
CN201117818Y (en) * 2007-11-12 2008-09-17 杭州电子科技大学 H surface sectoral horn antenna embodying filter function
CN105826643A (en) * 2016-04-26 2016-08-03 南京邮电大学 Half-mode substrate integrated waveguide-based compact six-port circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2796136Y (en) * 2005-05-30 2006-07-12 东南大学 Substrate integrated waveguide broad band multiple path power distributor
CN201117818Y (en) * 2007-11-12 2008-09-17 杭州电子科技大学 H surface sectoral horn antenna embodying filter function
CN105826643A (en) * 2016-04-26 2016-08-03 南京邮电大学 Half-mode substrate integrated waveguide-based compact six-port circuit

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110661072A (en) * 2019-11-04 2020-01-07 中国电子科技集团公司第三十六研究所 Ka-band waveguide power divider
CN112563711A (en) * 2020-11-23 2021-03-26 杭州电子科技大学 Rectangular patch-half-mode substrate integrated waveguide hybrid 90-degree directional coupler
CN112563711B (en) * 2020-11-23 2021-07-27 杭州电子科技大学 Rectangular patch-half-mode substrate integrated waveguide hybrid 90-degree directional coupler
CN113871829A (en) * 2021-09-27 2021-12-31 上海交通大学 Half-mode and ridge-added coaxial substrate integrated waveguide interconnection device

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