CN101473442B - 半绝缘外延的碳化硅及相关的宽带隙晶体管 - Google Patents
半绝缘外延的碳化硅及相关的宽带隙晶体管 Download PDFInfo
- Publication number
- CN101473442B CN101473442B CN200780022925.4A CN200780022925A CN101473442B CN 101473442 B CN101473442 B CN 101473442B CN 200780022925 A CN200780022925 A CN 200780022925A CN 101473442 B CN101473442 B CN 101473442B
- Authority
- CN
- China
- Prior art keywords
- epitaxial loayer
- boron
- substrate
- zone
- injection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 73
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 56
- 238000000407 epitaxy Methods 0.000 title claims description 27
- 229910052796 boron Inorganic materials 0.000 claims abstract description 151
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 142
- 239000000758 substrate Substances 0.000 claims abstract description 99
- 238000000034 method Methods 0.000 claims abstract description 36
- -1 boron ions Chemical class 0.000 claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 claims abstract description 6
- 238000002347 injection Methods 0.000 claims description 34
- 239000007924 injection Substances 0.000 claims description 34
- 239000000463 material Substances 0.000 claims description 25
- 238000009792 diffusion process Methods 0.000 claims description 24
- 238000009413 insulation Methods 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 23
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 238000010849 ion bombardment Methods 0.000 claims description 7
- 230000007547 defect Effects 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 230000005669 field effect Effects 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 3
- 238000004377 microelectronic Methods 0.000 claims description 3
- 238000011049 filling Methods 0.000 claims description 2
- 238000002955 isolation Methods 0.000 claims description 2
- 239000002019 doping agent Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Images
Classifications
-
- Y02B70/1483—
Landscapes
- Recrystallisation Techniques (AREA)
- Thyristors (AREA)
Abstract
Description
Claims (26)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US80513906P | 2006-06-19 | 2006-06-19 | |
US60/805,139 | 2006-06-19 | ||
US11/764,593 | 2007-06-18 | ||
US11/764,593 US7821015B2 (en) | 2006-06-19 | 2007-06-18 | Silicon carbide and related wide-bandgap transistors on semi insulating epitaxy |
PCT/US2007/071549 WO2007149849A1 (en) | 2006-06-19 | 2007-06-19 | Silicon carbide and related wide-bandgap transistors on semi insulating epitaxy |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2012101529494A Division CN102723360A (zh) | 2006-06-19 | 2007-06-19 | 半绝缘外延的碳化硅及相关的宽带隙晶体管 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101473442A CN101473442A (zh) | 2009-07-01 |
CN101473442B true CN101473442B (zh) | 2012-07-04 |
Family
ID=40829573
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200780022905.7A Expired - Fee Related CN101473451B (zh) | 2006-06-19 | 2007-06-19 | 光控碳化硅和相关的宽带隙晶体管以及可控硅元件 |
CN200780022925.4A Expired - Fee Related CN101473442B (zh) | 2006-06-19 | 2007-06-19 | 半绝缘外延的碳化硅及相关的宽带隙晶体管 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200780022905.7A Expired - Fee Related CN101473451B (zh) | 2006-06-19 | 2007-06-19 | 光控碳化硅和相关的宽带隙晶体管以及可控硅元件 |
Country Status (1)
Country | Link |
---|---|
CN (2) | CN101473451B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9412854B2 (en) * | 2010-10-20 | 2016-08-09 | Infineon Technologies Austria Ag | IGBT module and a circuit |
CN102176467B (zh) * | 2011-03-29 | 2016-03-23 | 上海华虹宏力半导体制造有限公司 | 沟槽式金属氧化物半导体场效应晶体管 |
CN106130524B (zh) * | 2016-06-14 | 2019-08-23 | 圣邦微电子(北京)股份有限公司 | 自适应振铃淬灭栅极驱动电路和驱动器 |
CN114361287B (zh) * | 2022-01-04 | 2024-02-23 | 中国工程物理研究院流体物理研究所 | 一种用于高温环境的硅基光触发多门极半导体开关芯片 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1304546A (zh) * | 1998-06-08 | 2001-07-18 | 克里公司 | 通过受控退火制造碳化硅功率器件的方法 |
CN1507506A (zh) * | 2001-05-11 | 2004-06-23 | ���﹫˾ | 用于高击穿电压半导体器件的高阻碳化硅衬底 |
CN1695253A (zh) * | 2001-05-25 | 2005-11-09 | 克里公司 | 不具有钒控制的半绝缘碳化硅 |
CN1706048A (zh) * | 2001-10-24 | 2005-12-07 | 克里公司 | 德尔塔掺杂的碳化硅金属半导体场效应晶体管及其制造方法 |
US7009209B2 (en) * | 2001-01-03 | 2006-03-07 | Mississippi State University Research And Technology Corporation (Rtc) | Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, high-power applications |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5226974B2 (zh) * | 1973-02-14 | 1977-07-18 | ||
US4825061A (en) * | 1987-08-07 | 1989-04-25 | Center For Innovative Technology | Optically controlled bulk semiconductor switch not requiring radiation to sustain conduction |
USH1717H (en) * | 1995-11-16 | 1998-04-07 | The United States Of America As Represented By The Secretary Of The Navy | Bistable photoconductive switches particularly suited for frequency-agile, radio-frequency sources |
EP1428248B1 (en) * | 2001-07-12 | 2011-11-23 | Mississippi State University | Method of making transistor topologies in silicon carbide through the use of selective epitaxy |
-
2007
- 2007-06-19 CN CN200780022905.7A patent/CN101473451B/zh not_active Expired - Fee Related
- 2007-06-19 CN CN200780022925.4A patent/CN101473442B/zh not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1304546A (zh) * | 1998-06-08 | 2001-07-18 | 克里公司 | 通过受控退火制造碳化硅功率器件的方法 |
US7009209B2 (en) * | 2001-01-03 | 2006-03-07 | Mississippi State University Research And Technology Corporation (Rtc) | Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, high-power applications |
CN1507506A (zh) * | 2001-05-11 | 2004-06-23 | ���﹫˾ | 用于高击穿电压半导体器件的高阻碳化硅衬底 |
CN1695253A (zh) * | 2001-05-25 | 2005-11-09 | 克里公司 | 不具有钒控制的半绝缘碳化硅 |
CN1706048A (zh) * | 2001-10-24 | 2005-12-07 | 克里公司 | 德尔塔掺杂的碳化硅金属半导体场效应晶体管及其制造方法 |
Non-Patent Citations (1)
Title |
---|
同上. |
Also Published As
Publication number | Publication date |
---|---|
CN101473451A (zh) | 2009-07-01 |
CN101473451B (zh) | 2011-07-27 |
CN101473442A (zh) | 2009-07-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102723360A (zh) | 半绝缘外延的碳化硅及相关的宽带隙晶体管 | |
KR100429869B1 (ko) | 매몰 실리콘 저머늄층을 갖는 cmos 집적회로 소자 및기판과 그의 제조방법 | |
US6633066B1 (en) | CMOS integrated circuit devices and substrates having unstrained silicon active layers | |
US7285475B2 (en) | Integrated circuit having a device wafer with a diffused doped backside layer | |
CN103782386A (zh) | 具有集成栅极电阻器和二极管接法mosfet的功率mosfet | |
US20110198689A1 (en) | Semiconductor devices containing trench mosfets with superjunctions | |
JP2004064063A (ja) | 高電圧縦型dmosトランジスタ及びその製造方法 | |
US4127860A (en) | Integrated circuit mesa bipolar device on insulating substrate incorporating Schottky barrier contact | |
JP5319918B2 (ja) | 高電圧半導体装置に対して用いられるウエハーを形成する方法及び高電圧半導体装置に対して用いられるウエハー | |
US20190288111A1 (en) | Semiconductor device, comprising an insulated gate field effect transistor connected in series with a field effect transistor | |
CN101473442B (zh) | 半绝缘外延的碳化硅及相关的宽带隙晶体管 | |
US10665703B2 (en) | Silicon carbide transistor | |
CN103794559A (zh) | 一种半导体器件及其制备方法 | |
US20080283967A1 (en) | Semiconductor device | |
US20130075747A1 (en) | Esd protection using low leakage zener diodes formed with microwave radiation | |
JP2004186620A (ja) | 半導体装置の製造方法 | |
KR100523053B1 (ko) | 실리콘게르마늄 이종접합바이폴라소자가 내장된 지능형전력소자 및 그 제조 방법 | |
CA2361752C (en) | A lateral field effect transistor of sic, a method for production thereof and a use of such a transistor | |
JP2001189321A (ja) | 横型ヘテロバイポーラトランジスタ及びその製造方法 | |
EP0890183B1 (en) | A FIELD EFFECT TRANSISTOR OF SiC AND A METHOD FOR PRODUCTION THEREOF |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SS SC IP LLC Free format text: FORMER OWNER: SEMISOUTH LAB INC. Effective date: 20111209 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20111209 Address after: Mississippi Applicant after: SS SC IP Limited company Address before: Mississippi Applicant before: Semisouth Lab Inc. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: PI CORP. Free format text: FORMER OWNER: SS SC Effective date: 20131016 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20131016 Address after: American California Patentee after: PI Corp. Address before: Mississippi Patentee before: SS SC IP Limited company |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120704 Termination date: 20160619 |
|
CF01 | Termination of patent right due to non-payment of annual fee |