CN108461441B - Bearing device and process chamber - Google Patents
Bearing device and process chamber Download PDFInfo
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- CN108461441B CN108461441B CN201710086745.8A CN201710086745A CN108461441B CN 108461441 B CN108461441 B CN 108461441B CN 201710086745 A CN201710086745 A CN 201710086745A CN 108461441 B CN108461441 B CN 108461441B
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- central body
- central
- annular edge
- thermal conductivity
- groove
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
Abstract
The invention provides a bearing device which is used for bearing and fixing a processed workpiece, and comprises a conductive layer and an insulating layer superposed on the conductive layer, wherein the insulating layer comprises a central body, an annular edge body and a groove body; a concave part is arranged on the upper surface of the central body and used for placing a groove body; the groove body is provided with a gas groove used for being connected with a gas source; the annular edge body is arranged around the side wall of the central body; the annular rim body has a thermal conductivity less than a thermal conductivity of the central body and/or the central body has a thermal conductivity less than a thermal conductivity of the trough body. The invention also provides a process chamber comprising the bearing device. The bearing device and the process chamber can improve the temperature uniformity of the processed workpiece, thereby improving the process uniformity (such as etching uniformity).
Description
Technical Field
The invention belongs to the technical field of semiconductor processing, and particularly relates to a bearing device and a process chamber.
Background
In Integrated Circuit (IC) manufacturing processes, particularly in plasma Etching (ETCH), Physical Vapor Deposition (PVD), Chemical Vapor Deposition (CVD), etc., a carrier device such as an electrostatic Chuck (ESC) is often used to fix, support and transport a workpiece (Wafer) to be processed and to realize temperature control, so as to avoid moving or dislocation during the process. The electrostatic chuck adopts an electrostatic attraction mode to fix a processed workpiece, and comprises two types of Coulomb and Johnson-Rahbek, and has the following advantages compared with other fixing modes: firstly, irreparable damage to a processed workpiece caused by mechanical reasons can be avoided; secondly, the effective processing area of the processed workpiece can be increased; thirdly, particle pollution caused by mechanical collision can be reduced; fourthly, the heat conduction between the electrostatic chuck and the processed workpiece is forceful; fifthly, the fatal defect of vacuum chuck fixed mode has been overcome, can use in high vacuum reaction chamber.
The process uniformity is an important factor in evaluating the quality of the process, and an important factor related to the process uniformity is the temperature of the workpiece being processed. In order to control the temperature of the workpiece to be processed, referring to fig. 1 a-1 c, an annular gas groove 2 is formed in the upper surface of the electrostatic chuck 1, and the annular gas groove 2 is connected to a gas source for delivering gas to conduct heat between the workpiece to be processed and the electrostatic chuck 1, and the temperature of the workpiece to be processed is controlled by adjusting the gas pressure; and, the upper surface of the electrostatic chuck 1 includes an annular edge region 3 and a central region 4, the annular edge region 3 being for sealing fixation with the lower surface of the workpiece to be processed when the workpiece to be processed is placed on the upper surface of the electrostatic chuck 1.
In practical application, the annular edge region 3 has a higher thermal conductivity than the central region 4, because the annular edge region 3 is in closer contact with the workpiece to be machined than the central region 4, and the width of the annular edge region 3 is generally about 5mm and is relatively wide to ensure a better sealing effect; in addition, since the region where the annular gas groove 2 is located is not in contact with the workpiece to be machined with respect to the central region 4, and the width of the annular gas groove 2 is generally about 2mm and the depth thereof is about 50 μm, the thermal conductivity of the region where the annular gas groove 2 is located is lower than that of the central region 4.
Based on the above analysis, it can be seen that: the thermal conductivity of the annular edge region 3 is greater than that of the central region 4, and the thermal conductivity of the central region 4 is greater than that of the region where the annular gas groove 2 is located, so that the conventional bearing device can cause poor temperature uniformity of a bearing workpiece to be processed, and poor process uniformity.
Disclosure of Invention
The invention aims to solve the technical problems in the prior art and provides a bearing device and a process chamber, which can improve the temperature uniformity of a processed workpiece, thereby improving the process uniformity (such as etching uniformity).
In order to solve one of the above technical problems, the present invention provides a carrying device for carrying and fixing a workpiece to be processed, the carrying device includes a conductive layer and an insulating layer stacked on the conductive layer, the insulating layer includes a central body, an annular edge body and a groove body; a concave part is arranged on the upper surface of the central body and used for placing the groove body; the groove body is provided with a gas groove used for being connected with a gas source; the annular edge body is arranged around the side wall of the central body; the annular rim body has a thermal conductivity less than a thermal conductivity of the central body and/or the central body has a thermal conductivity less than a thermal conductivity of the trough body.
Preferably, the peripheral edge of said central body is recessed to form a step; the annular edge body is arranged on the step.
Preferably, said central body is made of Al2O3Is made of ceramics.
Preferably, the annular edge body adopts CrO2Ceramics or Y2O3Is made of ceramics.
Preferably, the groove body is made of AlN ceramic.
The invention also provides a process chamber, wherein a bearing device is arranged in the process chamber and used for bearing and fixing the processed workpiece, and the bearing device adopts the bearing device provided by the invention.
In addition, the invention also provides a preparation method of the bearing device, and the preparation of the insulating layer comprises the following steps:
preparing the central body by adopting a sintering mode;
preparing the annular edge body by adopting a spraying mode, and arranging the annular edge body around the side wall of the central body;
the groove body is prepared by adopting a spraying mode and is arranged in the concave part of the central body.
Preferably, the method further comprises the following steps:
and the roughness of the upper surface of the annular edge body is smaller than that of the upper surface of the central body by adopting a grinding mode.
Preferably, when the carrier device is the carrier device of claim 2, the step of preparing the central body by sintering includes:
the central body having a step is prepared by direct sintering, or
Sintering a central body base for preparing the central body, and preparing the central body with the step by adopting a removing process.
Preferably, said central body is made of Al2O3Preparing ceramic; the annular edge body adopts CrO2Ceramics or Y2O3Preparing ceramic; the groove body is made of AlN ceramic.
The invention has the following beneficial effects:
according to the carrying device provided by the invention, the problem that the thermal conductivity of the annular edge area is greater than that of the central area in the prior art can be compensated by the aid of the fact that the thermal conductivity of the annular edge body is smaller than that of the central body, namely, the annular edge body with poor thermal conductivity is arranged in the annular edge area with better thermal conductivity, and the central body with better thermal conductivity is arranged in the central area with poor thermal conductivity; and/or, be less than the heat conductivity of groove body with the help of the heat conductivity of centerbody, namely, set up the centerbody that the heat conductivity is not good in the better central zone of heat conductivity, set up the better groove body of heat conductivity in the poor gaseous recess zone of annular of heat conductivity, consequently, can compensate the problem that has the regional heat conductivity of central zone to be greater than the regional heat conductivity of gaseous recess of annular among the prior art. Therefore, the bearing device provided by the invention can improve the uniformity of the thermal conductivity in the radial direction, so that the temperature uniformity of the processed workpiece in the radial direction can be improved, and the process uniformity (such as etching uniformity) can be improved.
The process chamber provided by the invention adopts the bearing device provided by the invention, so that the process uniformity can be improved.
Drawings
FIG. 1a is a top view of a conventional electrostatic chuck;
FIG. 1b is a partial cross-sectional view of the edge of a prior art electrostatic chuck;
FIG. 1c is a partial cross-sectional view of a prior art electrostatic chuck in the vicinity of an annular gas groove;
FIG. 2 is a longitudinal cross-sectional view of a carrier according to an embodiment of the present invention;
FIG. 3 is a cross-sectional view of a carrier according to an embodiment of the present invention;
FIG. 4 is an enlarged view of a portion of area A of FIG. 2;
fig. 5 is a partial enlarged view of the region B in fig. 2.
Prior art reference numerals include: 1, an electrostatic chuck; 2, an annular gas groove; 3, an annular edge region; 4, a central region;
the reference numerals of the present invention include: 10, an insulating layer; 101, a central body; 102, an annular rim body; 103, a groove body; 20, a conductive layer; 201, a cooling channel; 1031, gas grooves.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the carrying device and the process chamber provided by the present invention are described in detail below with reference to the accompanying drawings.
Example 1
FIG. 2 is a longitudinal cross-sectional view of a carrier according to an embodiment of the present invention; FIG. 3 is a cross-sectional view of a carrier according to an embodiment of the present invention; FIG. 4 is an enlarged view of a portion of area A of FIG. 2; fig. 5 is a partial enlarged view of the region B in fig. 2. Referring to fig. 2 to 5, a carrier device according to an embodiment of the present invention includes a conductive layer 20 and an insulating layer 10 stacked on the conductive layer 20, wherein the insulating layer 10 includes a central body 101, an annular edge body 102 and a recessed body 103. Wherein, a concave part is arranged on the upper surface of the central body 101 for placing the groove body 103; the housing 103 is provided with a gas recess 1031 for connection to a gas source (not shown) for delivering gas between the wafer workpiece and the insulating layer 10 for heat exchange therebetween, wherein the gas source can be, but is not limited to, a helium (He) source, and the temperature of the wafer workpiece can be controlled by controlling the pressure of the gas.
An annular rim body 102 is disposed around the sidewall of the central body 101; the upper surface of the annular edge body 102 is hermetically fixed with the workpiece to be processed.
The thermal conductivity of the annular edge body 102 is less than that of the central body 101, i.e. the annular edge body with poor thermal conductivity is arranged in the annular edge region with better thermal conductivity, and the central body with better thermal conductivity is arranged in the central region with poorer thermal conductivity, so that the problem that the thermal conductivity of the annular edge region is greater than that of the central region in the prior art can be compensated, and the thermal conductivities of the two regions are closer.
And/or, the thermal conductivity of the central body 101 is less than the thermal conductivity of the groove body 103, that is, the central body with poor thermal conductivity is arranged in the central area with better thermal conductivity, and the groove body with better thermal conductivity is arranged in the annular gas groove area with poorer thermal conductivity, so that the problem that the thermal conductivity of the central area is greater than that of the annular gas groove area in the prior art can be compensated, and the thermal conductivities of the two areas are closer.
In summary, the carrying device provided in the embodiments of the present invention can improve the uniformity of the thermal conductivity in the radial direction, so as to improve the temperature uniformity in the radial direction of the workpiece to be processed, thereby improving the process uniformity (e.g., etching uniformity).
In this embodiment, preferably, the roughness of the upper surface of the annular edge body 102 is less than that of the central body 101, that is, the upper surface of the central body 101 is rough, and the upper surface of the annular edge body 102 is smooth, so that firstly, the contact area between the central body 101 and the workpiece to be processed can be reduced, which is beneficial to the diffusion of gas and reduces the proportion of contact heat conduction in the whole heat transfer; secondly, the contact area between the annular edge body 102 with a smooth upper surface and the workpiece to be processed is large, thereby being beneficial to sealing between the annular edge body and the workpiece to be processed.
Specifically, in the present embodiment, the insulating layer 10 further embeds a dc electrode 30 for connecting with a dc power supply, so as to fix the workpiece by electrostatic adsorption. That is, the insulating layer 10 fixes the workpiece to be processed by electrostatic adsorption. However, the present invention is not limited to this, and in practical applications, the workpiece may be mechanically fixed.
In this embodiment, the conductive layer 20 is preferably adapted to be coupled to an rf power source to apply an rf bias voltage by which bias energy is provided to the plasma particles in the chamber to pull the ions toward the workpiece being processed.
Further preferably, cooling channels 201 are provided within the conductive layer 20; the cooling passage 201 is adapted to be connected to a cooling medium source (not shown) so that the cooling medium supplied from the cooling medium source flows through the cooling passage 201 for heat exchange, thereby removing heat generated during the process. In particular, the source of cooling medium may be, but is not limited to, a source of cooling water for providing cooling water.
In the present embodiment, also in particular, the peripheral edge of the central body 101 is recessed with a step; the annular edge body 102 is disposed on the step. In this case, the annular edge body 102 may be formed by, but not limited to, spraying on the step.
In particular, the central body 101 may be, but is not limited to, machined by means of sintering. More specifically, the central body 101 may be directly sintered, or may be machined into an integral structure, and then a material removing manner is adopted to remove a portion of the material to form the step.
Specifically, the annular edge body 102 and the groove body 103 can be formed by, but not limited to, spraying in the recess.
Specifically, the central body 101 is made of Al2O3The ceramic is made, not only the cost is low, but also the preparation into the required shape is convenient.
Specifically, the annular edge body 102 is made of CrO2Made of ceramics or Y2O3The ceramic is made, so that the cost is low, and the ceramic is conveniently formed by adopting a spraying mode.
Specifically, the groove body 103 is made of AlN (aluminum nitride) ceramic, which is not only low in cost, but also convenient to form by spraying.
Wherein, CrO2Ceramic and Y2O3The thermal conductivity of the ceramic is less than that of Al2O3The thermal conductivity of the ceramic; al (Al)2O3The thermal conductivity of the ceramic is less than that of the AlN ceramic, and the requirements that the thermal conductivity of the annular edge body 102 is less than that of the center body 101 and that of the center body 101 is less than that of the groove body 103 are satisfied as described above.
Specifically, the shape of the groove body 103 is a circular ring and is arranged around the circumference of the central body 101, so that the conveying to other parts is facilitated, and the temperature uniformity of the processed workpiece is facilitated. However, the present invention is not limited to this, and in practical use, the specific shape of the groove body 103 is not limited in the present invention.
Example 2
The embodiment of the present invention further provides a process chamber, wherein a carrying device is disposed in the process chamber, and is used for carrying and fixing a workpiece to be processed, and the carrying device provided in embodiment 1 of the present invention is adopted as the carrying device.
In particular, the process chamber includes, but is not limited to, an etch chamber.
The process chamber provided by the embodiment of the invention can improve the process uniformity by adopting the bearing device provided by the embodiment 1 of the invention.
Example 3
An embodiment of the present invention further provides a method for manufacturing the carrier device provided in embodiment 1, where the manufacturing of the insulating layer includes the following steps:
the central body is prepared by sintering.
And preparing the annular edge body by adopting a spraying mode, and enabling the annular edge body to surround the side wall of the central body.
The groove body is prepared by adopting a spraying mode and is arranged in the concave part of the central body.
The preparation method of the bearing device provided by the embodiment of the invention has the advantages of simple preparation process and easiness in operation.
Preferably, the method further comprises the following steps: and the roughness of the upper surface of the annular edge body is smaller than that of the upper surface of the central body by adopting a grinding mode.
Specifically, when the central body 101 of the carrier device is recessed with a step at its circumferential edge, the step of preparing the central body by sintering includes:
the central body having a step is prepared by direct sintering, or
Sintering a central body base body for preparing the central body, and preparing the central body with steps by adopting a removing process.
Preferably, Al is used for the central body2O3Preparing ceramic; the annular edge body adopts CrO2Ceramics or Y2O3Preparing ceramic; the groove body is made of AlN ceramics, so that the cost is low and the preparation is convenient.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various changes and modifications can be made therein without departing from the spirit and scope of the invention, and these changes and modifications are to be considered as within the scope of the invention.
Claims (10)
1. A bearing device is used for bearing and fixing a workpiece to be processed and comprises a conductive layer and an insulating layer superposed on the conductive layer, and is characterized in that the insulating layer comprises a central body, an annular edge body and a groove body;
a concave part is arranged on the upper surface of the central body and used for placing the groove body;
the groove body is provided with a gas groove used for being connected with a gas source;
the annular edge body is arranged around the side wall of the central body;
the annular rim body has a thermal conductivity less than a thermal conductivity of the central body, and the central body has a thermal conductivity less than a thermal conductivity of the trough body.
2. The carrier device of claim 1 wherein the central body is recessed at a peripheral edge thereof with a step;
the annular edge body is arranged on the step.
3. The carrier in accordance with claim 1 wherein the central body is Al2O3Is made of ceramics.
4. The carrier device as claimed in claim 3, wherein the annular rim body is formed of CrO2Ceramics or Y2O3Is made of ceramics.
5. The load bearing device of claim 3 or 4, wherein the pocket body is made of AlN ceramic.
6. A process chamber, wherein a bearing device is arranged in the process chamber and used for bearing and fixing a workpiece to be processed, and the bearing device is the bearing device of any one of claims 1-5.
7. A method for manufacturing a carrier device according to any of claims 1-5, wherein the insulating layer is manufactured by the steps of:
preparing the central body by adopting a sintering mode;
preparing the annular edge body by adopting a spraying mode, and arranging the annular edge body around the side wall of the central body;
the groove body is prepared by adopting a spraying mode and is arranged in the concave part of the central body.
8. The method of manufacturing a carrier according to claim 7, further comprising:
and the roughness of the upper surface of the annular edge body is smaller than that of the upper surface of the central body by adopting a grinding mode.
9. The method of claim 7, wherein when the carrier is the carrier of claim 2, the step of preparing the central body by sintering comprises:
the central body having a step is prepared by direct sintering, or
Sintering a central body base for preparing the central body, and preparing the central body with the step by adopting a removing process.
10. The method of claim 7, wherein the central body is made of Al2O3Preparing ceramic; the annular edge body adopts CrO2Ceramics or Y2O3Preparing ceramic; the groove body is made of AlN ceramic.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710086745.8A CN108461441B (en) | 2017-02-17 | 2017-02-17 | Bearing device and process chamber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710086745.8A CN108461441B (en) | 2017-02-17 | 2017-02-17 | Bearing device and process chamber |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108461441A CN108461441A (en) | 2018-08-28 |
| CN108461441B true CN108461441B (en) | 2021-05-07 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710086745.8A Active CN108461441B (en) | 2017-02-17 | 2017-02-17 | Bearing device and process chamber |
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| Country | Link |
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| CN (1) | CN108461441B (en) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7718007B2 (en) * | 2005-03-17 | 2010-05-18 | Tokyo Electron Limited | Substrate supporting member and substrate processing apparatus |
| CN202332816U (en) * | 2011-11-23 | 2012-07-11 | 中微半导体设备(上海)有限公司 | Electrostatic chuck forming subareas by different materials |
| CN105514016B (en) * | 2014-09-23 | 2019-10-29 | 北京北方华创微电子装备有限公司 | Bogey and semiconductor processing equipment |
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| CN108461441A (en) | 2018-08-28 |
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