CN101410670B - 光电头灯、用于生产光电头灯的方法和发光二极管芯片 - Google Patents
光电头灯、用于生产光电头灯的方法和发光二极管芯片 Download PDFInfo
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- CN101410670B CN101410670B CN2007800115361A CN200780011536A CN101410670B CN 101410670 B CN101410670 B CN 101410670B CN 2007800115361 A CN2007800115361 A CN 2007800115361A CN 200780011536 A CN200780011536 A CN 200780011536A CN 101410670 B CN101410670 B CN 101410670B
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Abstract
本发明公开一种发出电磁辐射的光电头灯。所述光电头灯具有一个发光二极管芯片,所述发光二极管芯片具有至少两个空间发光区域;或者所述光电头灯具有至少两个发光二极管芯片,每个发光二极管芯片具有至少一个空间发光区域。所述头灯特别适合于机动车辆的前头灯。所述发光区域在与其相关联的主扩展平面的平面图内具有不同的形状,具有不同的大小并且/或者不是矩形,并且被不同地定位。特别优选的是,可以彼此独立地驱动发光区域。此外,本发明还公开了用于生产光电头灯的多种方法。
Description
技术领域
本发明涉及一种光电头灯,其包括至少一个发光二极管芯片,所述发光二极管芯片发出电磁辐射。本发明还涉及一种用于生产这种类型的光电头灯的方法,并且涉及用于这种类型的光电头灯的发光二极管芯片。
本专利申请要求德国专利申请102006015117.8的优先权,其公开内容通过引用被包含于此。
背景技术
例如在WO2004/088200内描述了一种光电头灯。所述头灯具有多个头灯元件,每个具有至少一个发光二极管芯片、与所述发光二极管芯片相关联的主光学元件和头灯输出元件。所述头灯输出元件被以下述方式以两组布置:它们的布置对应于头灯的期望的发光特性。所述两组头灯元件可以彼此独立地工作。
发明内容
本发明的目的是提供一种在背景技术部分所描述的类型的光电头灯的替代品,通过其可以实现预定的发光特征。而且,本发明还提供一种用于生产这种类型的光电头灯的方法和用于这种类型的光电头灯的发光二极管芯片。
通过按照独立权利要求所述的光电头灯、方法和发光二极管芯片来实现这个目的。各自的从属权利要求涉及所述头灯、所述方法和所述发光二极管芯片的有益扩展形式和优选配置。
在技术领域部分所描述的类型的头灯被提供,所述头灯具有一个发光二极管芯片,所述发光二极管芯片具有至少两个空间发光区域;或者所述头灯具有至少两个发光二极管芯片,每个发光二极管芯片具有至少一个空间发光区域。所述发光区域的至少部分区域彼此横向相间。即,所述发光区域不横向重叠或者不横向完全重叠。所述发光区域在与其相关联的主扩展平面的平面图内具有不同的形状,具有不同的大小并且/或者不是矩形,并且被不同地定位。特别优选的是,可以彼此独立地驱动发光区域。
有益地,所述发光区域的主扩展平面大致彼此平行。使用不同形状、或者不同大小和/或不是矩形或者被不同地定位的多个不同的发光区域,能够以精确的方式来实现用于多种应用领域的头灯的不同的期望发光特性。所述头灯最好用作机动车辆的前头灯,或者是诸如视频投影机的投影应用的照明单元的聚光灯。
可以使用头灯来有益地实现各种头灯功能。在用于机动车辆的前头灯的情况下,例如有高速公路灯、城市灯、国道灯和转弯灯,可以通过发光区域的对应的互连和驱动来实现。
以下述方式来有益地选择发光区域的形状、大小和/或方位:一个或多个发光区域一起产生大致对应于期望的头灯光锥的横截面形状的形状。在此和以下,头灯光锥表示任意形状的体积,通过其头灯光发光,其中,不包括其中亮度比在与头灯相同距离处的最大亮度低一个数量级的区域。应当明白,发光特性表示头灯光锥的一个或多个属性,诸如在不同的立体角的光强、亮/暗过渡或者横截面形状。横截面形状表示头灯光锥在与头灯的主发射方向垂直的平面内的横截面的形状。
按照一个有益的实施例,在主扩展平面的平面图内的发光区域的至少一个的形状不是矩形的。所述发光区域具有沿着线的边界,特别是相对于彼此偏斜的边界。
按照一个特别优选的实施例,在主扩展平面的平面图内的发光区域的至少一个的形状具有锐角或者钝角的转角。作为补充或者替换,在主扩展平面的平面图内的发光区域的至少一个的形状具有拥有优角的弯曲部分。“弯曲部分”不必然被理解为尖的转角。而是,所述弯曲部分也可以例如是圆形的。
优选的是,在主扩展平面的平面图内的发光区域的至少一个的形状没有对称轴。对于这种类型的发光区域,有可能特别地实现具有不对称的横截面和/或不对称的发光分布的头灯光锥。
作为得当的方式,相邻的发光区域在横向上彼此具有较小的距离。有益地,所述距离小于或者等于100微米,优选地小于或者等于50微米,特别优选地小于或者等于20微米。对于这样的小距离,有可能实现具有特别地均匀的发光分布的头灯光锥。在另一个实施例内,所述发光区域在横向上部分地重叠。
按照一个特定的有益实施例,所述一个或多个发光二极管芯片被布置在载体上,并且与所述载体一起被覆盖电绝缘层。在所述绝缘层上形成了电导体轨道结构,其中,所述发光区域每个具有至少一个连接到所述导体轨道结构的电连接片。特别地,所述电连接片电传导地连接到所述导体轨道结构。优选的是,所述连接片另外也机械地连接到所述导体轨道结构。
在原理上,可以任意地构造或者构建所述导体轨道结构;在一个个案内,其也可以特别地由无结构的导电层构成。优选的是,所述导体轨道结构包括多个导体轨道,其可以或者彼此连接,或者作为补充或者替代地彼此电绝缘。
用于一个或多个发光二极管芯片的导电接触连接和互连的、以这种方式形成的导体轨道结构对于头灯应用特别有益。结果,不仅使得头灯能够精确地实现不同的发光特性,而且也可以被合算地导电安装和互连,并且也可以配置非常接近所述发光区域的光学元件。具体地,光学元件可以比在一个或多个发光二极管芯片通过一条或多条焊线的被电接触连接的情况下更接近发光区域。
所述头灯有益地具有至少一个光学元件。优选的是,至少一个光学元件与每个发光二极管芯片相关联;特别优选的是,多个或者全部发光区域一起与一个光学元件相关联。所述光学元件用于形成具有最大光束强度和最小发散度的光束锥体。
优选的是,一个光学元件与多个发光二极管芯片一起相关联。与专用光学元件与每一个发光二极管芯片相关联的情况相比较,这例如具有简化安装的优点。
特别有益的是,如果光学元件的光输入尽可能地接近发光二极管芯片,有益地可能特别适宜于指定的无导线接触连接,因为与通过焊线的接触连接相比较,所述无导线接触连接可以体现为具有特别小的高度。作为得当的方式,通过与发光二极管芯片尽可能接近的光学元件来减少光从光学元件发出的立体角,光束锥体的横截面面积在此仍然很小。这特别在下述情况下是必要的,当最高的可能辐射强度意欲被投射到最小的可能区域上,就像头灯应用或者投影装置的情况那样。
按照一个特定的有益实施例,除了一个或多个发光二极管芯片之外,在所述载体上布置电子部件,所述部件具有至少一个电连接片,所述电连接片经由导体轨道结构而导电地连接。优选的是,所述部件的连接片经由所述导体轨道结构而导电地连接到所述发光区域的至少一个连接片。所述电子部件相对于所述一个或多个发光二极管芯片具有不同类型。具有不同类型表示所述部件在功能和/或结构特征上不同,在这种情况下,它们可以具体实现不同的目的,在它们的工作模式上基于不同的物理效应,具有不同形状的电连接片或者可以以不同的方式被安装。
在一个特别得当的实施例内,所述电子部件是无源部件和/或集成电路。其优选地适合于SMD安装(表面可安装器件的安装)。作为补充或者替代,所述部件适合于包括使用焊线的安装。在头灯内,这种类型的部件可以至少部分地基于导体轨道结构而不是通过焊料或者通过焊线来有益地导电连接。
在所述光电头灯内,原理上有可能将作为在传统的头灯内的载体的构成部分的导体轨道部分地或者完全地替换为被施加到绝缘层的导体轨道结构。这首先允许了部件和发光二极管芯片的电安装,其在技术上实现简单,其次允许了使用合算的载体。
有益的是,至少一个发光区域的电连接片经由所述导体轨道结构而导电地连接到载体的连接区域。
有益地,所述绝缘层特别地包括发光转换材料。通过所述发光转换材料,可以将要由所述部件发出的第一波长范围内的电磁辐射转换为第二波长范围内的电磁辐射。举例而言,可以以这种方式将蓝色辐射部分地转换为黄色辐射。在给定蓝色和黄色辐射的适当强度比率的情况下,可以以这种方式来产生白光。在这种类型的发光转换的情况下,如果绝缘层直接地毗连用于耦合出辐射的发光区域的那个表面,则在效率上是特别有益的。
在一个得当的实施例内,所述一个或多个发光二极管芯片被安装在被施加在载体上的芯片载体上。通过使用独立的芯片载体,可以例如在给定材料的适当选择的情况下,实现发光二极管芯片的特别良好的散热。所述芯片载体也可以是发光二极管部件的壳体,其中,有益地不需要将发光二极管芯片在所述芯片壳体上完全地电安装。而是,有可能仅仅在通过导体轨道结构而在载体上施加芯片载体后导电地连接所述发光二极管芯片。
提供一种用于生产发出电磁辐射的光电头灯的方法。所述方法包括:提供一种载体和至少一个发光二极管芯片,其中,所述发光二极管芯片具有至少两个发光区域,所述两个发光区域在与其相关联的主扩展平面的平面图内具有不同的形状、具有不同的大小和/或在相同类型的形状的情况下被不同地定位。每个所述发光区域具有至少一个电连接片。所述发光区域最好彼此独立地被驱动。
所述发光二极管芯片被施加在载体上。其后,向所述发光二极管芯片和所述载体施加绝缘层。在另一个方法步骤内,在绝缘层内形成多个切出部分,以便露出所述发光区域的至少一个相应的电连接片。以下述方式在绝缘层上施加导电材料:其连接到电连接片,以便形成电导体轨道结构。
作为得当的方式,以层的形式来施加所述导电材料。根据实施例和要实现的导体轨道结构的形状,所述层可以随后被得当地构造,结果是具体上,也可能产生彼此电绝缘的导体轨道结构的导体轨道。
提供另一种用于生产发出电磁辐射的光电头灯的方法,其中,靠着所述载体提供了至少两个发光二极管芯片。所述发光二极管芯片每个具有至少一个发光区域,所述发光区域具有至少一个电连接片。所述发光区域在与其相关联的主扩展平面的平面图内,具有不同的形状,具有不同的大小和/或不是矩形,并且被不同地定位。
其他的方法步骤包括:在载体上施加所述发光二极管芯片;向所述发光二极管芯片和所述载体施加绝缘层;在所述绝缘层内形成切出部分,以露出所述发光区域的至少一个相应的电连接片;以导电材料连接到所述电连接片的方式来向所述绝缘层施加所述导电材料,以便形成电导体轨道结构。可以以上述的方式来具体实现所述导体轨道结构。
在所述方法的一个优选实施例内,在施加绝缘层之前,至少一个电子部件被提供并且被施加在载体上。以所述电子部件也部分地或者完全地被覆盖的方式来施加所述绝缘层。而且,这个实施例的其他方法步骤包括:在所述绝缘层内形成切出部分,以便露出所述部件的电连接片;以导电材料连接到所述部件的电连接片的方式,向所述绝缘层施加导电材料,以便形成电导体轨道结构。
特别有益的是,一起并且基本上同时地生产多个头灯。具体地,可以以一系列批处理来执行施加绝缘层、形成切出部分和施加导电材料的步骤。可以在这些批处理内并行地处理多个光电头灯,这是对于使用单独的处理的合算的替代方式,所述单独的处理例如为在使用焊线焊接的情况下所需要的处理。而且,当使用批处理时,也可以将必要的操作安装所需的资金耗费保持为低。
可以针对不同的产品灵活地设计所述批处理。原理上,有可能在一条生产线上生产不同的产品。可以在相互不同的方法的参数改变后连续地或者并行地如此进行。所述方法可以特别地用于导电接触连接和来自不同装置类型的部件的连接。
有益地,施加绝缘层包括施加预制层。作为补充或者替代,施加绝缘层有益地包括:通过印刷、喷射或者旋涂而施加绝缘层的材料。通过这些手段,可以在技术上以简单和合算的方式来实现施加绝缘层。
在所述方法的一种特别优选的变化形式内,为了施加绝缘层,首先,向所述发光二极管芯片和载体施加先驱层。例如通过溶胶凝胶方法、通过汽相沉积或者通过悬浮液的旋涂来如此进行。执行第一热处理,其适合于从所述先驱层去除有机成分。对所述材料随后进行第二热处理,其适合于硬化所述先驱层。具体地,可以通过这种方法来产生薄和均匀的玻璃层。
最好通过包括激光处理的方法步骤来产生在绝缘层内的切出部分。在这种情况下,使用激光辐射在要产生切出部分的区域内去除绝缘层。在激光处理期间,可以精确地设置和直接地产生切出部分的大小、形状和深度。
施加导电材料有益地包括:通过PVD方法来施加金属层,并且通过电沉积来加强所述金属层。适当的PVD方法例如是溅射。
作为替代方式,也可以使用印刷方法、特别是丝网印刷方法来施加导电材料。而且,也可以使用喷射或者旋涂方法来产生导电材料。
提供一种发出电磁辐射的发光二极管芯片。所述发光二极管芯片具有至少两个发光区域,所述发光区域可以彼此独立地被驱动,并且在与其相关联的主扩展平面的平面图内,具有不同的形状,具有不同的大小并且/或者在相同类型的形状的情况下被不同地定位。所述发光二极管特别有益地适合于在光电头灯内应用。
按照所述发光二极管芯片的一个特别有益的实施例,所述至少一个发光区域的形状在所述主扩展平面的平面图内不是矩形的,具有拥有锐角或者钝角的转角,具有拥有优角的弯曲部分,并且/或者没有对称轴。
通过下面结合附图所述的示例实施例,所述头灯、所述方法和发光二极管芯片的其他优点、优选实施例和便利将更加清楚。
附图说明
在附图内:
图1示出了按照第一示例实施例的发光二极管芯片的示意平面图;
图2示出了按照第二示例实施例的发光二极管芯片的示意平面图;
图3示出了按照第三示例实施例的发光二极管芯片的示意平面图;
图4示出了在图1内图解的发光二极管芯片的示意平面图;
图5示出了从按照第一示例实施例的光电头灯选取的部分的示意平面图;
图6示出了从按照第二示例实施例的光电头灯选取的部分的示意平面图;
图7示出了从按照第三示例实施例的光电头灯选取的部分的示意平面图;
图8-13示出了按照第一示例实施例的方法、用于生产在图5内图解的头灯的不同方法阶段的示意剖视图;
图14示出了按照第二示例实施例的方法、用于生产在图5内图解的头灯的方法阶段的示意剖视图;
图15-21示出了第三示例实施例的用于生产在图6内图解的光电头灯的方法的不同方法阶段的示意剖视图。
具体实施方式
在所述示例实施例和附图内,相同或者相同作用的部分在每种情况下被提供相同的附图标号。所图解的元件以及在元件彼此之间的关系应当看作不必然是真实按照比例的。而是,使用夸大的大小来图解在附图内的一些细节,以便提供更好地理解。
在附图1内图解的发光二极管芯片具有第一发光区域21、第二发光区域22和第三发光区域23。所述发光区域被布置在公共载体基底24上。
第一发光区域21和第三发光区域23在所图解的其主扩展平面的平面图内具有五边形形状。第一发光区域21的五边形形状具有三个直角和两个钝角α、β。第三发光区域23同样包括三个直角,但是其还具有优角γ和锐角δ。“发光区域的形状的角”用于表示所述形状的轮廓的两条相邻的局部直线相对于彼此定位的角度,所述角是在所述形状内被测量的,如图1内所示。
优角γ例如在185°和205°(包含两者)之间。优选的是,优角γ大约是195°。
第二发光区域22具有四边形形状,其包括两个直角、一个锐角和一个钝角。其被布置在第一发光区域21和第三发光区域23之间。
在它们的整体布置内,三个发光区域21、22和23形成大致矩形的、特别是正方形的形状。彼此面对的发光区域21、22、23的外侧边大致彼此平行。所述发光区域可以彼此独立地工作。
图4图解了在沿着图1内所示的虚线的剖面上的示意剖面图。可以在这个剖面图内看出,发光区域21、23通过发光二极管层210、230来形成。发光二极管层210、230例如是半导体层序列,其具有适合于当施加电流时发出电磁辐射的有源区域。
所述发光二极管层例如基于氮化物复合物半导体材料,并且适合于从蓝色和/或紫外线光谱发出电磁辐射。氮化物复合物半导体材料是包含氮的复合物半导体材料,诸如来自InxAlyGa1-x-yN系的材料,其中,0≤x≤1,0≤y≤1并且x+y≤1。所述发光二极管层具有例如由氮化物复合物半导体材料构成的至少一个半导体层。
所述发光二极管层可以包含例如传统的pn结、双异质结构、单量子阱结构(SQW结构)或者多量子阱结构(MQW结构)。这样的架构是本领域内的技术人员公知的,因此在此不进一步详细说明。在US5,831,277和US5,684,309内描述了这样的MQW结构的示例,在这些发明中的公开内容通过引用被包含于此。
发光二极管层210、230被施加在基底24上。其可以是生长基底,在其上发光二极管层以半导体层序列的形式生长。作为替代方式,基底24也可以是载体基底,在其上发光二极管层210、230在它们形成后被施加。
在这种情况下,可以例如在发光二极管层210、230和基底24之间布置反射器,所述反射器反射在发光二极管层210、230内产生的电磁辐射。举例而言,可以在这种情况下包含金属或者电介质的镜面。优选的是,所述反射器包括电介质层和在所述电介质层上施加的金属层,其中,所述电介质层与发光二极管层210、230相邻(未示出)。
发光二极管层210、230彼此相间。结果,可以保持独立地驱动它们的发光区域21、23。可以以任何其他方式来实现不同的发光区域的相互独立的可驱动性。也可以例如发光区域沿着与其相关联的主扩展平面而部分地彼此重叠,即,所述发光区域不必被布置在物理上彼此分离的区域内。
可以例如通过电流壁垒(barrier)来实现部分重叠的发光区域,所述电流壁垒仅仅部分地防止电流——例如在第一发光区域内被施加——流过与第二发光区域相关联的发光二极管层的区域。在激发第二发光区域后,一个或多个电流壁垒也对应地部分屏蔽电流。总体而言,可以以这种方式来实现两个不同的、但是部分相互重叠的发光区域。
在图2内图解的发光二极管芯片具有第一发光区域21和两个第二发光区域22。第一发光区域21具有三角形形状,其具有一个直角和两个锐角α、β。所述两个第二发光区域22具有长矩形形状。它们以下述方式并排被布置:它们的两个长边彼此平行,并且彼此面对。第一发光区域21以下述方式相对于所述两个第二发光区域22被布置:通过发光区域的整体布置来形成具有优角γ的五边形形状。可以象在图1内图解的发光二极管芯片的第三发光区域的优角那样配置所述优角γ。
在图3内图解的发光二极管芯片具有5个发光区域21、22,其具有相同类型的形状。三个第一发光区域21的形状具有第一方向,并且两个第二发光区域22的形状具有第二方向,其中,所述第一方向相对于与发光区域的主扩展平面平行的第二方向旋转180°。
所述发光区域全部具有三角形形状,其具有一个直角和两个锐角。所述发光区域的整体布置再一次产生具有优角γ的五边形形状,可以像在前述示例内所述的优角γ那样配置所述优角γ。
在图1-3内所述的发光二极管芯片良好地适用于机动车辆前头灯的头灯模块。对于这种类型的前头灯,在许多国家内规定了不对称的发光特性,其中,所发出的头灯光锥具有拥有优角的不对称的横截面。
在图5内图解的光电头灯具有光电部件50和无源部件100。这些不同类型的电子部件被布置在载体10上。可以在图13的剖面图内看出,部件50、100和载体10被电绝缘层3覆盖。电导体轨道结构14被形成在绝缘层3上。光电部件50和无源部件100具有连接到导体轨道结构14的电连接片7、6、106。
光电部件50具有芯片载体20,其具有电连接片7。在电连接片7的部分上施加发光二极管芯片1。所述芯片在远离所述芯片载体20的电连接片7的一侧上具有三个发光区域21、22、23,其中每个具有电连接片6。这些电连接片6和未被发光二极管芯片1覆盖的电连接片7的那个部分形成光电部件50的相应的电连接片。
无源部件100例如是电阻器、变阻器或者电容器。其电连接片106之一经由导体轨道结构14的电导体轨道导电地连接到发光二极管芯片1的第三发光区域23的电连接片6。第二电连接片106同样导电地连接到导体轨道结构14的导体轨道,但是这个导体轨道不直接地引向光电部件50的连接片,而是与后者远离。
第一发光区域21和第二发光区域22的连接片6以及光电部件50的在芯片载体20上形成的电连接片7也导电地连接到导体轨道结构14的导体轨道。所述电连接片6、7、106最好全部导电地和机械直接地连接到导体轨道结构14。
可以例如使用没有电导体轨道或者电连接片的载体10来生产在图5内图解的头灯。头灯的所有电导体轨道有益地例如被形成为在绝缘层3上的导体轨道结构14的一部分。
作为替代方式,也可以将在绝缘层3上形成的导体轨道结构14与对应的载体10的导体轨道和/或连接片组合,即,所述部件的电互连包括导体轨道结构14和载体10的导体轨道和/或连接片。在图6内图解了这种类型的头灯的示例。
在图6内图解的头灯具有载体10,其具有电连接片7,在其上施加了第一发光二极管芯片1和第二发光二极管芯片2。第一发光二极管芯片1具有单个发光区域,所述发光区域在其主扩展平面的平面图内具有矩形形状。第二发光二极管芯片2具有单个发光区域,其在其主扩展平面的平面图内具有三角形形状。发光二极管芯片之间的距离例如大约是20微米。
发光二极管芯片1、2的面向电连接片7的侧面导电地连接到连接片7。远离电连接片7的发光二极管芯片1、2的侧面每个具有电连接片6,其导电地连接到导体轨道结构14的导体轨道。第一发光二极管芯片1的连接片6经由所述导体轨道结构导电地连接到载体10的电连接区域8。
导体轨道结构14的另一个导体轨道将电连接片7连接到同样位于载体10上的无源部件100的连接片106。无源部件100具有两个电连接片106,其中,第二电连接片也导电地连接到导体轨道结构14的导体轨道。
有可能导体轨道结构14例如没有将头灯的部件的电连接片彼此直接地导电连接的导体轨道。
多个发光二极管芯片最好可以用于如从图5和6所示的头灯选取的部分的情况下。举例而言,包含4到10个发光二极管芯片(包含两者)。作为替代方式,所述头灯具有例如4到10个光电部件(包含两者),每个包含至少一个发光二极管芯片1。
在这种类型的头灯内,所述无源部件用于例如稳定被施加到光电部件的电压。变阻器被方便地用于这个目的。作为补充或者替代方式,可以获得相对于光电部件50不同类型的电子部件来用于任何目的,诸如用于在头灯内形成适当的电子驱动电路。这也特别包含使用集成电路形成的逻辑电路。举例而言,可以在载体10上布置逻辑芯片和/或存储器芯片,并且将其导电地连接到导体轨道结构14。
在图7内图解了来自具有集成电路200的示例头灯的选取部分。集成电路200具有例如外壳,并且适合于被以类似于SMD部件的方式安装和连接。作为补充或者替代,也可以使用没有外壳的集成电路(“裸芯”)。这样的裸芯一般通过粘合剂粘接或者焊接而被机械地安装,并且通过丝焊处理而被导电地连接。而且,也可以使用适合于通过块安装而连接的集成电路。
在图7内图解的头灯的情况下,这种类型的集成电路200被施加在载体10上,并且使用在绝缘层3上施加的导体轨道结构14而导电地连接。举例而言,集成电路200的所有的电连接片206直接导电地连接到导体轨道结构14的导体轨道。
具有第一和第二非矩形发光区域21、22的第一发光二极管芯片1被施加在载体10上。所述第一发光区域21是三角形的,并且第二发光区域是四边形的。它们每个具有电连接片6。与载体10上的芯片一起并排布置了用于发光二极管芯片的电连接的另外的连接片7。所述电连接6、7经由导体轨道结构的导体轨道而导电地连接到集成电路200的连接片。
为了清楚,在图5、6和7内未示出绝缘层。其被布置在导体轨道结构14和在所述附图内图解的其他元件之间,其中,所述绝缘层在要接触连接的连接片的区域内具有用于镀通孔的切出部分。通过下面参照图8-21描述的用于生产头灯的示例方法来说明这个构造。
图8-13包含用于生产在图5内图解的头灯的示例方法的不同方法阶段的示意剖面图。在图13内图解的剖面图是沿着在图5内所述的虚线的部分的图示。在图8-12内图解的剖面图是在所述示例方法的在前方法阶段期间的对应部分的图示。
图8图解了提供载体10的方法步骤。所述载体10具有例如平板的形状。作为替代方式,所述载体也可以具有结构且不平坦。其包含例如瓷材料、塑料和/或金属,或者基本上由这些材料之一构成。举例而言,所述载体由氮化铝构成。
不同类型的至少两种光电部件50、100被施加到载体10,参见图9。这些部件被方便地固定到载体10。虽然所述部件到载体10的导电链接不是必要的,但是在所述部件和载体10之间的具有高导热率的连接是有益的。部件50、100例如通过粘结剂和/或通过焊料而连接到载体10。但是,原理上,也可以无需这种连接。
所述部件之一是光电部件50,其包括芯片载体20、在芯片载体20上施加的电连接层7和在电连接层7上施加的发光二极管芯片1。
发光二极管芯片1在其面向电连接层7的外部区域上具有例如通过焊接(未示出)而导电地或者机械地连接到电连接层7的电连接片。在远离电连接层7的一侧上,发光二极管芯片1具有电连接片6。所述连接片6例如由接触层或者接触层序列形成,所述接触层或者接触层序列被施加到发光二极管芯片1的发光二极管层上,并且例如通过光刻而被构造。
芯片载体20包括瓷、金属和塑料材料的至少之一,或者由这些材料之一构成。举例而言,其由氮化铝构成。
无源部件100与光电部件50相隔一定距离地被施加在载体10上。所述部件具有以下述方式形成的两个电连接片106:部件100适合于SMD安装。SMD表示“表面可安装器件”。SMD安装应当被理解为表示通常是SMD部件的安装,其一般包括向安装区域施加所述部件,并且在安装区域内将所述部件的电连接片焊接到连接片。
在图10内图解的方法阶段内,向电部件50、100和向载体10施加绝缘层3。优选的是,通过喷射或者旋涂聚合物溶液来施加所述绝缘层3。而且,例如,印刷方法,特别是丝网印刷也可以有益地用于施加绝缘层3。
在图11内图解的方法步骤内,在绝缘层3内产生一个第一切出部分11和两个第二切出部分12,通过所述第一切出部分11暴露发光二极管芯片1的电连接片6的部分区域,通过第二切出部分12在每种情况下暴露无源部件100的电连接片106的部分区域。例如通过光刻处理或者通过激光加工来产生切出部分11、12,优选的是激光加工。
其后,以导电材料连接到电连接片6、106的方式来向绝缘层施加导电材料。作为得当的方式,以导电材料填充切出部分11、12并且覆盖绝缘层3的方式来施加。其被施加来形成电导体轨道结构14,如图12所示。
所述导电材料包括例如至少一种金属,或者由其构成。例如以金属层的形式来施加。这是例如通过汽相沉积或者溅射而进行的。随后结构化金属层,其例如是通过光刻而进行的。
作为替代,首先,向绝缘层3的整个区域上例如施加具有100纳米厚度的较薄的金属层。在被提供来用于形成导体轨道结构14的区域内,选择性地以电解加强,并且随后蚀刻所述金属层直到去除了未被加强的区域。例如通过向所述金属层施加光刻胶层来进行,其中,通过光刻,在被提供用于导体轨道结构14的区域内(未示出)产生切出部分。
在光刻胶层的切出部分的区域内,通过电解沉积来加强先前施加的金属层。以下述方式来有益地如此进行:在电解加强层内的金属层比预先在整个区域上施加的金属层厚的多。举例而言,在电解加强区域内的金属层的厚度可以是几个微米。其后,去除光刻胶层,并且执行蚀刻处理,其具体去除了在没有被电解加强的区域内的金属层。相反,在所述电解加强的区域内,金属层因为其较大的厚度而仅仅部分地被去除,结果是它保持在这些区域内以形成电导体轨道结构14。
作为另一个替代方式,也可以将所述电导体轨道结构直接地以结构化的形式施加到绝缘层3。可以例如使用印刷方法、特别是使用丝网印刷法来进行。
作为对于金属的替代,有益地使用例如透明的导电材料,其特别地对于由发光二极管芯片1发出的电磁辐射透明。具体地,诸如氧化铟锡(ITO)的透明导电氧化物(TCO)适用于作为这种类型的导电透明材料。作为替代,例如使用透明的导电塑料层。优选的是,通过汽相沉积、印刷、喷射或者旋涂来施加所述导电透明材料。
在形成所述电导体轨道结构14后,参见图12,在另一个可选的方法步骤内,可以向所述导体轨道结构施加电绝缘覆盖层15,参见图13。绝缘覆盖层15最好是塑料层,例如抗蚀剂层。其特别地覆盖导体轨道结构14,以便产生无电势的表面。
在图14内图解了上面参照图10所述的施加绝缘层3的一种替代变化形式。在这种情况下,在向载体10施加之前预制电绝缘层。举例而言,以柔性膜的形式来提供它,其随后被施加到所述部件和载体10。可以使用粘结剂通过例如层叠或者粘结剂粘接来施加所述膜。对于其余部分,可以以如上所述的方式来执行所述方法。
下文参照图15-18图解的方法的示例实施例的描述说明了施加绝缘层3的另一种替代变化形式。
与上面参考图8-14描述的方法相反,提供了具有两个连接区域7、8的载体10。所述电连接区域7、8彼此电绝缘。通过例如金属层来形成它们,所述金属层被施加在载体10的基体上。所述载体10可以例如是PCB(印刷电路板),特别是MCPCB。
发光二极管芯片1被施加到第一连接区域7上,并且导电地连接到连接区域7,例如通过下述方式来进行:通过经由焊料或者导电粘结剂焊接或者粘结剂粘接而施加所述发光二极管芯片的面向所述连接区域的那个区域。在其与连接区域7远离的一侧,发光二极管芯片1具有电连接片6。发光二极管芯片1是被施加在载体10上的光电部件的一个示例。
作为替代方式,所述光电部件也可以具有外壳,其中,发光二极管芯片1如果适合的话与在图6内图解的发光二极管芯片2一起被安装,并且如果适合的话,也被封装。所述外壳可以适合于例如SMD安装。
图15-21对应于在生产头灯的不同方法阶段期间沿着图6所示虚线的、在图6内图解的头灯的剖面图示。在图21中所示的剖面图对应于通过完成的头灯的剖面的图示。
包含有机和无机构成物的先驱层9被施加到载体10和其上施加的部件上,参见图16。例如通过溶胶凝胶方法、通过汽相沉积、溅射、喷射或者通过悬浮液的旋涂来施加所述先驱层。
所述先驱层随后进行第一热处理。在这种情况下,其例如在最好大约200摄氏度到400摄氏度的温度T1下被置于中性或者略含氧气的空气内达到大约四个小时到八个小时。举例而言,纯氮空气或者具有低氧气部分压力的中性空气适合于这个目的。在第一热处理期间,先驱层9的有机构成物被去除,如在图17内的箭头18所示。
随后,所得到的层通过第二热处理来硬化,如在图18内的示意性图示,以便产生绝缘层3。所述第二热处理包括烧结,其在最好大约300摄氏度到500摄氏度的温度T2下被进行大约四个小时到五个小时。最好在还原空气(reducing atmosphere)或者氧化的空气内执行所述第二热处理。具体地可以通过这种方法来产生玻璃层。
如此产生的绝缘层3随后被提供切出部分11、12,以便露出电连接片6的部分区域或者载体的电连接区域8,参见图19。其后,向绝缘层3施加用于形成导体轨道结构14的导电材料,参见图20。其后,可选地,向电导体轨道结构14施加绝缘覆盖层15,如图21所示。
可以以与绝缘层3的产生类似的方式来产生覆盖层15。其可以具体包括玻璃或者由玻璃构成。在这种情况下,上面参考图16-18描述的方法步骤最好第一次被执行以便产生绝缘层3,并且在施加导体轨道结构14后被重复,以便形成覆盖层15。
通过多次重复施加电绝缘层和导电层,也可以实现多层的导体轨道结构。这在下述情况下特别有益:如果要在受限的空间内实现多个电子部件的复杂互连。
在所述的方法和光电头灯内,绝缘层和/或绝缘覆盖层可以包括发光转换材料,后者被提供为例如粉末形式的至少一种荧光体。适当的发光转换材料例如是用于LED应用的所有已知转换剂。
适合于作为转换剂的这样的荧光体和荧光体化合物的示例是:
-例如在DE10036940和其中所述的现有技术内公开的氯硅酸盐(chlorosilicate);
-例如在WO2000/33390和其中所述的现有技术内公开的正硅酸盐、硫化物、硫代金属酸盐(thiometal)、以及钒酸盐;
-例如在US6,616,862和其中所述的现有技术内公开的铝酸盐、氧化物、卤磷酸盐(halophosphate);
-例如在DE10147040和其中所述的现有技术内公开的氮化物、氧氮化硅(sione)和塞龙(sialone);以及
-例如在US2004-062699和其中所述的现有技术内公开的稀土金刚砂,诸如YAG:Ce和碱土金属元素。
通过基于示例实施例而说明本发明,但是本发明不限于所述示例实施例。而是,本发明涵盖任何新的特征和特征的组合,其特别包括在专利权利要求内所述特征的任何组合,即使在专利权利要求或者示例实施例内未明确地指定这个特征或者这个组合本身。
Claims (18)
1.一种发出电磁辐射的光电头灯,其特征在于
所述光电头灯包含发光二极管芯片,所述发光二极管芯片具有至少两个发光区域,其中能够彼此独立地驱动所述发光区域,并且所述发光区域在与其相关联的主扩展平面的平面图内具有不同的形状,具有不同的大小并且/或者不是矩形,并且被不同地定位,其中所述至少两个发光区域彼此相间。
2.根据权利要求1的头灯,其特征在于
在所述主扩展平面的平面图内,所述发光区域的至少之一的形状不是矩形的。
3.根据前述权利要求的任何一个的头灯,其特征在于
在所述主扩展平面的平面图内的发光区域的至少一个的形状具有锐角或者钝角的转角。
4.根据权利要求1或2的头灯,其特征在于
在所述主扩展平面的平面图内的发光区域的至少一个的形状具有拥有优角的弯曲部分。
5.根据权利要求1或2的头灯,其特征在于
在所述主扩展平面的平面图内的发光区域的至少一个的形状没有对称轴。
6.根据权利要求1或2的头灯,其特征在于
相邻的发光区域彼此具有小于或者等于100微米的距离。
7.根据权利要求1或2的头灯,其特征在于
一个或多个所述发光二极管芯片被布置在载体上,并且与所述载体一起被覆盖电绝缘层,在所述电绝缘层上形成了电导体轨道结构,其中,所述发光区域每个具有至少一个连接到所述导体轨道结构的电连接片。
8.根据权利要求7的头灯,其特征在于
除了一个或多个所述发光二极管芯片之外,在所述载体上布置电子部件,所述部件具有至少一个电连接片,所述电连接片经由所述导体轨道结构而导电地连接到所述发光区域的至少一个连接片。
9.按照权利要求8的头灯,其特征在于
所述电子部件是无源部件和/或集成电路。
10.按照权利要求8的头灯,其特征在于
所述电子部件适合于SMD安装。
11.根据权利要求7的头灯,其特征在于
至少一个发光区域的连接片经由所述导体轨道结构而导电地连接到所述载体的连接区域。
12.根据权利要求7的头灯,其特征在于
所述绝缘层包含发光转换材料。
13.根据权利要求7的头灯,其特征在于
一个或多个所述发光二极管芯片被安装在被施加在所述载体上的芯片载体上。
14.根据权利要求1的头灯,其特征在于
所述发光区域通过半导体层序列来形成,其中所述半导体层序列分别具有适于发出电磁辐射的有源区域。
15.一种用于生产发出电磁辐射的光电头灯的方法,包括步骤:
-提供载体和至少一个发光二极管芯片,所述发光二极管芯片具有至少两个发光区域,能够彼此独立地驱动所述发光区域,并且所述发光区域在与其相关联的主扩展平面的平面图内具有不同的形状、具有不同的大小和/或在相同类型的形状的情况下被不同地定位,其中,每个所述发光区域具有至少一个电连接片,以及其中所述发光区域彼此相间,
-在所述载体上施加所述发光二极管芯片,
-向所述发光二极管芯片和所述载体施加绝缘层,
-在绝缘层内形成多个切出部分,以便露出所述发光区域的至少一个相应的电连接片,
-以下述方式在所述绝缘层上施加导电材料:其连接到所述电连接片,以便形成电导体轨道结构。
16.根据权利要求15的方法,还包括步骤:
-在施加所述绝缘层之前,向所述载体施加至少一个电子部件,
-以也覆盖所述电子部件的方式施加所述绝缘层,
-在所述绝缘层内形成多个切出部分,以便露出所述部件的电连接片;
-以导电材料连接到所述部件的电连接片的方式,向所述绝缘层施加导电材料,以便形成电导体轨道结构。
17.一种发出电磁辐射的发光二极管芯片,其特征在于
其具有至少两个发光区域,所述发光区域可以彼此独立地被驱动,并且在与其相关联的主扩展平面的平面图内,具有不同的形状,具有不同的大小并且/或者在相同类型的形状的情况下被不同地定位,其中所述发光区域彼此相间。
18.根据权利要求17的发光二极管芯片,其特征在于
所述至少一个发光区域的形状在所述主扩展平面的平面图内不是矩形的,具有拥有锐角或者钝角的转角,具有拥有优角的弯曲部分,并且/或者没有对称轴。
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CN2007800115361A Expired - Fee Related CN101410670B (zh) | 2006-03-31 | 2007-03-20 | 光电头灯、用于生产光电头灯的方法和发光二极管芯片 |
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US (2) | US8267561B2 (zh) |
EP (1) | EP2002176B1 (zh) |
JP (1) | JP2009531839A (zh) |
KR (1) | KR101314367B1 (zh) |
CN (1) | CN101410670B (zh) |
DE (1) | DE102006015117A1 (zh) |
TW (1) | TWI378554B (zh) |
WO (1) | WO2007115523A1 (zh) |
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DE102007046337A1 (de) | 2007-09-27 | 2009-04-02 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip, optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements |
JP2009218452A (ja) * | 2008-03-11 | 2009-09-24 | Harison Toshiba Lighting Corp | 発光デバイス及び灯具 |
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DE102008054218A1 (de) | 2008-10-31 | 2010-05-06 | Osram Opto Semiconductors Gmbh | Lumineszenzdiodenchip |
KR102136181B1 (ko) * | 2009-10-01 | 2020-07-22 | 루미너스 디바이시즈, 아이엔씨. | 발광 장치 |
US9324691B2 (en) * | 2009-10-20 | 2016-04-26 | Epistar Corporation | Optoelectronic device |
TW201115779A (en) * | 2009-10-26 | 2011-05-01 | Gio Optoelectronics Corp | Light emitting apparatus |
TWI466284B (zh) * | 2010-07-02 | 2014-12-21 | Epistar Corp | 光電元件 |
DE102010044560A1 (de) | 2010-09-07 | 2012-03-08 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements |
CN103563074B (zh) * | 2011-04-04 | 2018-09-14 | 陶瓷技术有限责任公司 | 具有Al冷却体的陶瓷印刷电路板 |
DE102011102032A1 (de) * | 2011-05-19 | 2012-11-22 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleitermodul und Display mit einer Mehrzahl derartiger Module |
DE102013001285A1 (de) * | 2013-01-25 | 2014-07-31 | GM Global Technology Operations LLC (n. d. Ges. d. Staates Delaware) | Kraftfahrzeugscheinwerfer |
KR102003001B1 (ko) * | 2013-03-13 | 2019-07-23 | 엘지이노텍 주식회사 | 발광 모듈 |
JP6191409B2 (ja) * | 2013-11-15 | 2017-09-06 | 日亜化学工業株式会社 | 発光素子 |
FR3030995A1 (fr) * | 2014-12-23 | 2016-06-24 | Aledia | Source de lumiere electroluminescente a parametre de luminance ajuste ou ajustable en luminance et procede d'ajustement d'un parametre de luminance de la source de lumiere electroluminescente |
DE102015104886A1 (de) * | 2015-03-30 | 2016-10-06 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip, optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
US10211188B2 (en) * | 2016-12-01 | 2019-02-19 | Cheng Chang TransFlexDisplay Corp. | Method for making an LED module and module made thereof |
JP6384578B2 (ja) * | 2017-08-04 | 2018-09-05 | 日亜化学工業株式会社 | 発光素子 |
JP7152688B2 (ja) * | 2019-07-17 | 2022-10-13 | 日亜化学工業株式会社 | 発光装置 |
DE102019220378A1 (de) * | 2019-12-20 | 2021-06-24 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterbauelement und verfahren zu dessen herstellung |
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Also Published As
Publication number | Publication date |
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TW200746410A (en) | 2007-12-16 |
WO2007115523A1 (de) | 2007-10-18 |
TWI378554B (en) | 2012-12-01 |
US8267561B2 (en) | 2012-09-18 |
US20120301982A1 (en) | 2012-11-29 |
US20090180294A1 (en) | 2009-07-16 |
EP2002176A1 (de) | 2008-12-17 |
KR101314367B1 (ko) | 2013-10-04 |
EP2002176B1 (de) | 2020-04-29 |
DE102006015117A1 (de) | 2007-10-04 |
CN101410670A (zh) | 2009-04-15 |
US8814406B2 (en) | 2014-08-26 |
JP2009531839A (ja) | 2009-09-03 |
KR20080106938A (ko) | 2008-12-09 |
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