CN101375400A - 保护栅极沟槽式金属氧化物半导体场效应晶体管组件及其制造方法 - Google Patents
保护栅极沟槽式金属氧化物半导体场效应晶体管组件及其制造方法 Download PDFInfo
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- CN101375400A CN101375400A CNA2007800036459A CN200780003645A CN101375400A CN 101375400 A CN101375400 A CN 101375400A CN A2007800036459 A CNA2007800036459 A CN A2007800036459A CN 200780003645 A CN200780003645 A CN 200780003645A CN 101375400 A CN101375400 A CN 101375400A
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (55)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/356,944 US7633119B2 (en) | 2006-02-17 | 2006-02-17 | Shielded gate trench (SGT) MOSFET devices and manufacturing processes |
US11/356,944 | 2006-02-17 | ||
PCT/US2007/004234 WO2007098076A2 (en) | 2006-02-17 | 2007-02-17 | Shielded gate trench (sgt) mosfet devices and manufacturing processes |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101375400A true CN101375400A (zh) | 2009-02-25 |
CN101375400B CN101375400B (zh) | 2010-07-14 |
Family
ID=38427318
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007800036459A Active CN101375400B (zh) | 2006-02-17 | 2007-02-17 | 保护栅极沟槽式金属氧化物半导体场效应晶体管组件及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (3) | US7633119B2 (zh) |
CN (1) | CN101375400B (zh) |
TW (3) | TWI446541B (zh) |
WO (1) | WO2007098076A2 (zh) |
Cited By (13)
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CN101997033A (zh) * | 2009-08-14 | 2011-03-30 | 万国半导体股份有限公司 | 屏蔽栅极沟道金属氧化物半导体场效应管器件及其制备方法 |
CN102194699A (zh) * | 2010-03-11 | 2011-09-21 | 万国半导体股份有限公司 | 带有改良型源极传感布局的屏蔽栅极沟槽mos |
CN102623501A (zh) * | 2011-01-28 | 2012-08-01 | 万国半导体股份有限公司 | 带有增强型源极-金属接头的屏蔽栅极沟槽金属氧化物半导体场效应管 |
CN103094321A (zh) * | 2011-11-01 | 2013-05-08 | 万国半导体股份有限公司 | 二维屏蔽栅晶体管器件及其制备方法 |
CN104347424A (zh) * | 2013-08-09 | 2015-02-11 | 英飞凌科技股份有限公司 | 具有单元沟槽结构和接触点的半导体器件及其制造方法 |
CN104425569A (zh) * | 2013-09-11 | 2015-03-18 | 英飞凌科技股份有限公司 | 半导体器件、结型场效应晶体管和垂直场效应晶体管 |
CN104916699A (zh) * | 2012-03-02 | 2015-09-16 | 万国半导体股份有限公司 | 用于在沟槽功率mosfet中优化端接设计的不对称多晶硅栅极的制备方法 |
US9653568B2 (en) | 2013-09-13 | 2017-05-16 | Infineon Technologies Ag | Method of manufacturing an insulated gate bipolar transistor with mesa sections between cell trench structures |
US9711641B2 (en) | 2013-11-27 | 2017-07-18 | Infineon Technologies Ag | Semiconductor device with cell trench structures and a contact structure |
CN107611179A (zh) * | 2017-10-24 | 2018-01-19 | 贵州芯长征科技有限公司 | 降低栅源电容的屏蔽栅mosfet结构及其制备方法 |
CN107658342A (zh) * | 2017-10-24 | 2018-02-02 | 贵州芯长征科技有限公司 | 非对称的屏蔽栅mosfet结构及其制备方法 |
US10249721B2 (en) | 2013-04-04 | 2019-04-02 | Infineon Technologies Austria Ag | Semiconductor device including a gate trench and a source trench |
CN111223930A (zh) * | 2018-11-26 | 2020-06-02 | 深圳尚阳通科技有限公司 | 屏蔽栅沟槽mosfet |
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US20100013009A1 (en) * | 2007-12-14 | 2010-01-21 | James Pan | Structure and Method for Forming Trench Gate Transistors with Low Gate Resistance |
US8003522B2 (en) * | 2007-12-19 | 2011-08-23 | Fairchild Semiconductor Corporation | Method for forming trenches with wide upper portion and narrow lower portion |
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US7936011B2 (en) | 2011-05-03 |
TW201242031A (en) | 2012-10-16 |
CN101375400B (zh) | 2010-07-14 |
US8431989B2 (en) | 2013-04-30 |
TWI398000B (zh) | 2013-06-01 |
TW200733392A (en) | 2007-09-01 |
TWI446540B (zh) | 2014-07-21 |
TWI446541B (zh) | 2014-07-21 |
TW201244106A (en) | 2012-11-01 |
US20070194374A1 (en) | 2007-08-23 |
US20100090276A1 (en) | 2010-04-15 |
US20110204440A1 (en) | 2011-08-25 |
WO2007098076A3 (en) | 2008-05-08 |
US7633119B2 (en) | 2009-12-15 |
WO2007098076A2 (en) | 2007-08-30 |
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