CN101351887B - 晶体管的制造 - Google Patents
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Abstract
一种例如高电子迁移率晶体管的晶体管的制造方法,每一个晶体管包括在共用衬底之上的多个外延层,该方法包括:(a)在多个外延层的第一表面上形成多个源极接点;(b)在第一表面上形成至少一个漏极接点;(c)在第一表面上形成至少一个栅极接点;(d)在栅极接点、源极接点和漏极接点之上和之间形成至少一个绝缘层;(e)在至少一个绝缘层的至少一部分上形成导电层,以连接源极接点;以及(f)在导电层之上形成至少一个热沉层。
Description
技术领域
本发明涉及晶体管制造,且特别涉及,但非排他地涉及一种氮化镓高电子迁移率晶体管(“HEMT”)的制造以及由此制造的晶体管。
背景技术
近年来,已经推出了HEMT器件。它们使得在超过100W/晶片时还具有高功率成为可能;从-1到40GHz的高频成为可能;且能够在高于600℃的温度进行操作。这就产生了许多热量,因为不是所有器件都可以承受这样的温度,所以散热变得重要,且HEMT器件可以同许多其他器件一起使用。
发明内容
依照第一优选方面,提供一种制造晶体管的方法,每一个晶体管包括衬底上的多个外延层,方法包括:
在多个外延层的第一表面上形成多个源极接点;
在第一表面上形成至少一个漏极接点;
在第一表面上形成至少一个栅极接点;
在栅极接点、源极接点和漏极接点之上和之间形成至少一个绝缘层,以使栅极接点、源极接点和漏极接点绝缘;
在至少一个绝缘层的至少一部分并在其穿过其形成导电层,用于连接源极接点;
以及
在导电层上形成至少一个热沉层。
依照第二优选方面,提供一种包括晶体管的装置,每一个晶体管包括:
具有第一表面的多个外延层;
全部在第一表面上的多个源极接点、至少一个漏极接点和至少一个栅极接点;
在栅极接点、源极接点和漏极接点之上和之间的至少一个绝缘层,以使栅极接点、源极接点和漏极接点绝缘;
在至少一个绝缘层的至少一部分上并穿过其的形成导电层,用于连接源极接点;以及
在导电层上的至少一个热沉层。
晶体管可以是高电子迁移率晶体管。多个外延层可以包括一氮化镓层、一铝氮化镓层、一n+铝氮化镓层和一最终氮化镓层。第一表面可以在最终氮化镓层之上。导电层可以通过在至少一个绝缘层中的过孔连接多个源极接点。该至少一个绝缘层可以是导热且电绝缘的。
一个相对厚的导热金属层可以形成在导电层之上。形成相对厚的层之前,在导电层上形成至少一个籽晶层。
可以通过分别生成并接着填充穿过衬底和外延层直至漏极接点、栅极接点和导电层的过孔来形成漏、栅和源连接。
可选择地,可以移除衬底并通过分别生成并接着填充穿过外延层直至漏极接点、栅极接点和导电层的过孔来形成漏、栅和源连接。这种情况下,可以应用另一导热但电绝缘的材料的层替代衬底。
附图说明
为了使本发明可以被充分理解且容易地产生经济效果,现用仅为本发明优选实施例的非限制性实例进行描述,参考附图进行说明。
附图中:
图1是器件处于制造工艺第一步的示意图;
图2是器件处于制造工艺第二步的示意图;
图3是器件处于制造工艺第三步的示意图;
图4是器件处于制造工艺第四步的示意图;
图5是器件处于制造工艺第五步的示意图;
图6是器件处于制造工艺第六步的示意图;
图7是器件处于制造工艺第七步的示意图;
图8是器件处于制造工艺第八步的示意图;
图9是器件处于制造工艺第九步的示意图;
图10是器件处于制造工艺第十步的示意图;
图11是器件处于制造工艺第十一步的示意图;
图12是器件处于制造工艺第十二步的示意图;
图13是器件处于制造工艺第十三步的示意图;
图14是沿图13上的箭头14-14的线并在该方向上的完整截面图;
图15是器件处于制造工艺第十四步的示意图;
图16是沿图15上的箭头16-16的线并在该方向上的完整截面图;
图17是器件处于制造工艺第十五步的示意图;
图18是器件处于制造工艺第十六步的示意图;
图19是沿图18上的箭头19-19的线并在该方向上的完整截面图;
图20是器件处于制造工艺第十七步的示意图;
图21是器件处于制造工艺最后一步的示意图;以及
图22是器件处于制造工艺另一可选的最后一步的示意图。
具体实施方式
图1示出在制造开始时的结构。蓝宝石衬底1上具有缓冲层2,且外延层3在缓冲层2上。外延层3包括GaN层4、AlGaN层5和n+AlGaN层6、以及最终GaN层7。
之后,在最终GaN层表面上形成源极接点8和漏极接点9(图2),每个晶体管都存在源极接点8和漏极接点9。之后,在每一个源极接点8和每一个漏极接点9之间形成栅极接点10(图3)。这样,当激发每一个栅极10时,电流将从一个源极8流至位于源极接点8两侧的两个漏极9。
如图4中所示,之后,施加一个电绝缘层以电绝缘接点8、9、10,同时又能够导热,该电绝缘层例如是AlN的钝化层11。该层11最好是导热的。在钝化层11上应用抗蚀剂(图5),并且形成穿过钝化层11直至源极接点8的过孔12,并移除抗蚀剂。由导电导热金属构成的另一层13施加到钝化层11上,该层13也填充过孔12。其连接源极接点8(图6)。这样,所有接点8、9和10都在一个平面内。
如图7所示,至少另一层14施加到传导金属层13上且钝化层11不被传导金属层13覆盖。该另一层14是一籽晶层。
籽晶层14可以是多层-例如,三个不同的金属层。第一籽晶层应与导电层13粘合良好,且可以是铬或钛。继该层之后是第二层和第三层,可以分别为钽和铜。其他材料可以用于所有籽晶层。第二籽晶层可作为扩散阻挡层,防止位于其顶部(例如,第三籽晶层)的铜或其他材料扩散进外延层3。第三籽晶层作为后续电镀的籽晶层。
如图所示,有两层15、16,层15作为扩散阻挡层且另一层16为籽晶层。
这些籽晶层的热膨胀系数可以与GaN的热膨胀系数3.17不同。同时,接触层13的热膨胀系数可以与GaN的热膨胀系数不同(它们分别是14.2和13.4),它们相对薄(几个纳米)且不会对下面的GaN外延层形成严重的应力问题。但是,之后增加的电镀铜可达几百微米的厚度,并因此引起严重的应力问题。故这些籽晶层可以用来缓冲应力。通过以种或多种实现:
通过具有足够的柔性来吸收应力,
通过具有足够的内部滑动特性来吸收应力,
通过具有足够的刚性承受应力,以及
通过具有逐渐变化的热膨胀系数。
在逐渐变化的热膨胀系数的情况下,第一层的热膨胀系数最好小于第二层的热膨胀系数,且第二层的热膨胀系数最好小于第三层的热膨胀系数等等。例如,所示的第一层15可以是热膨胀系数为6.3的钽,且第二层16可以是热膨胀系数为16.5的铜。这样,热膨胀系数从钝化层13逐渐变化到外部的铜层18。另外可选择的是而具有不同的膨胀系数,以在相关温度下,一个金属层扩展的同时另一个收缩。
如果外部的铜层18直接施加到接触层13和钝化层11,则它们的热膨胀率的差异会导致裂化、分离和/或故障。通过沉积多个不同材料的籽晶层,特别是彼此具有不同热膨胀系数的金属,热膨胀的应力通过籽晶层分散,结果降低了裂化、分离和/或故障的可能性。如果存在一个(多个)中间层,则该一个(多个)中间层的膨胀系数应当介于层15和16的膨胀系数之间,且应当从第一层15的热膨胀系数逐渐变化到最后一层16的热膨胀系数。也可以没有中间层,或可以根据任何需要或期望设置中间层的层数(一层、两层、三层等等)。
由于具有例如铜的相对厚的金属的图案化镀层18将用作新衬底和/或热沉,因此通过标准光刻将一个图案化的厚抗蚀剂17施加到籽晶层15(图8),以及在厚抗蚀剂17之间和其上电镀剩余的金属18以形成单金属支撑层18(图9)。
之后,依照例如Kelly[M.K.Kelly,O.Ambacher,R.Dimitrov,R.Handschuh和M.Stutzmann,phys.stat.sol.(a)159,R3(1997)]所描述的公知技术,实施蓝宝石衬底1的移除或剥离(图10和11)。还可以通过抛光或湿法刻蚀移除衬底1。其暴露GaN层4最下面的表面19。最好在外延层3完整时实施剥离衬底,以改善移除质量和结构强度。通过在移除时保持外延层3的完整,保证了外延层3的电学和机械特性。
移除原始衬底1之后,厚电镀金属18能够用作如下一个或多个:新的机械支撑;且在操作半导体器件期间能够用作如下一个或多个:热沉、散热器和连接层。由于最终GaN层7相对薄,所以产生于活性层3中的热量更容易能够传导到厚的层18。且,每一个层11、13和14都是热传导性的。
一个(多个)籽晶层14可以是电绝缘层,但必须是优良的热导体,例如AlN。
厚的层18产生一个寄生电容,其减缓操作速度。通过增加层18和外延层3之间的距离,可以降低寄生电容。
将抗蚀剂层施加到GaN层4的当前暴露表面19,且实施刻蚀以形成至少一个穿过外延层13直至漏极接点9的过孔20(图12)。之后填充过孔20(图13)以形成漏极连接21。图14示出漏极连接20、源极接点8和栅极接点10的示意图。
形成一个穿过外延层3直至栅极接点10的单独过孔22(图15),且填充过孔22以形成栅极连接23。
图16示出栅极接触23以及漏极接触20和源极接点8的示意图。
图17和18示出用于形成源极连接8的相似工艺。形成一个穿过外延层3直至源极连接层13的过孔24,且填充过孔24以形成源极连接25。
图19示出源极连接25的示意图。
接着实施刻蚀(图20)以形成穿过外延层3、钝化层11和导电层13直到暴露出厚抗蚀剂17端部的缺口26。之后,为了管芯切割而移除厚抗蚀剂17。
这留下了连接20、23和25,故器件可以被电连接。另外可选择地,如图22所示,图17和18的工艺可以避免如前所述的管芯切割。之后,源极接点层13的电连接将在26的任一面或两面。
如果需要,可以在适当的位置剥离衬底1并通过如激光来钻孔以使连接20、23和25得以形成。另外可选择地,并如图21所示,可以添加另一热传导但电绝缘材料(例如AlN)的层27代替衬底1。
这样,HEMT器件可以与相对厚的金属层18一起使用,该金属层18作为如下一个或多个:器件的接点、热沉、热扩散器和物理支撑物。钝化层11、导电层13、籽晶层14和相对厚的层18的综合效果是,它们都是传导性的,所以它们组合起来,将热量从外延层3传导开,并将它们组合作为热沉。
虽然已经在前述描述中描述了本发明的优选实施例,但是本领域技术人员可以理解的是,在不背离本发明的情况下,有关设计或构造细节可以进行多种变化或改进。
Claims (30)
1.一种制造晶体管的方法,每一个晶体管包括在共用衬底上的多个外延层,该方法包括:
在多个外延层的第一表面上形成多个源极接点;
在第一表面上形成至少一个漏极接点;
在第一表面上形成至少一个栅极接点;
在栅极接点、源极接点和漏极接点之上和之间形成至少一个绝缘材料层,以绝缘栅极接点、源极接点和漏极接点;
在至少一个绝缘层的至少一部分上并穿过其形成导电层,用于连接源极接点;
在导电层上形成至少一个籽晶层;以及
电镀至少一个籽晶层,以形成至少一个热沉层。
2.如权利要求1所述的方法,其中晶体管是高电子迁移率晶体管,多个外延层包括氮化镓层、氮化铝镓层、n+氮化铝镓层和最终氮化镓层,第一表面在该最终氮化镓层之上;至少一个绝缘材料层是电绝缘的但是热传导的;导电层通过在至少一个绝缘层中的过孔连接多个源极接点。
3.如权利要求1或权利要求2所述的方法,其中,至少一个热沉层是形成于籽晶层层之上的由传导金属构成的相对厚的层。
4.如权利要求1所述的方法,其中,籽晶层包括多个籽晶层,其中多个籽晶层中的第一籽晶层施加到导电层,该第一籽晶层为具有第一热膨胀系数的材料;且第二籽晶层形成于第一籽晶层之上,该第二籽晶层为具有第二热膨胀系数的材料,该第二热膨胀系数大于该第一热膨胀系数。
5.如权利要求4所述的方法,其中第一籽晶层和第二籽晶层中的一个是扩散阻挡层,用于提供施加至其的层的扩散阻挡以防止扩散进外延层。
6.如权利要求3所述的方法,其中,该相对厚的层用作由支撑结构、热沉、散热器构成的组中选择的至少一种,并用作连接器。
7.如权利要求1所述的方法,其中,通过生成并接着填充穿过共用衬底和多个外延层直至导电层的至少一个过孔来形成源极连接。
8.如权利要求1所述的方法,其中,通过生成并接着填充穿过共用衬底和多个外延层直至至少一个漏极接点的至少一个过孔来形成漏极连接。
9.如权利要求1所述的方法,其中,通过生成并接着填充穿过共用衬底和多个外延层直至至少一个栅极接点的至少一个过孔来形成栅极连接。
10.如权利要求1所述的方法,进一步包括在形成至少一个热沉层之后移除衬底;以及形成由电绝缘且热传导材料构成的另一层来替代衬底。
11.如权利要求10所述的方法,其中,通过形成并接着填充穿过多个外延层直至导电层的至少一个过孔来形成源极连接。
12.如权利要求10所述的方法,其中,通过生成并接着填充穿过多个外延层直至至少一个漏极接点的至少一个过孔来形成漏极连接。
13.如权利要求10所述的方法,其中,通过生成并接着填充穿过多个外延层直至至少一个栅极接点的至少一个过孔来形成栅极连接。
14.如权利要求1所述的方法,其中实施图案化电镀,以形成至少一个热沉层。
15.一种包括晶体管的装置,每一个晶体管包括:
(a)具有第一表面的多个外延层;
(b)多个源极接点、至少一个漏极接点和至少一个栅极接点,它们都在第一表面上;
(c)在源极接点、至少一个漏极接点和至少一个栅极接点之上和之间的至少一个绝缘层,以绝缘栅极接点、源极接点和漏极接点;
(d)在至少一个绝缘层的至少一部分上并穿过其的导电层,用于连接源极接点;以及
(f)电镀在导电层上的籽晶层上的至少一个热沉层。
16.如权利要求15所述的装置,其中,至少一个热沉层位于籽晶层以及至少一个绝缘层的没有覆盖导电层的位置上。
17.如权利要求16所述的装置,其中,该至少一个绝缘层是电绝缘和热传导的。
18.如权利要求15至17任一项所述的装置,其中,多个外延层包括氮化镓层、氮化铝镓层、n+氮化铝镓层和最终氮化镓层,第一表面在该最终氮化镓层之上。
19.如权利要求15所述的装置,其中,导电层通过在至少一个绝缘层中的过孔连接多个源极接点。
20.如权利要求16所述的装置,其中,至少一个热沉层是在导电层之上的由传导金属构成的一个相对厚的层。
21.如权利要求15所述的装置,其中,籽晶层包括多个籽晶层,其中多个籽晶层中的第一籽晶层在导电层上,该第一籽晶层为具有第一热膨胀系数的材料;且第二籽晶层形成于第一籽晶层之上,该第二籽晶层为具有第二热膨胀系数的材料,该第二热膨胀系数大于该第一热膨胀系数。
22.如权利要求21所述的装置,其中,第一籽晶层和第二籽晶层的一个是扩散阻挡,用于提供施加至其的层的扩散阻挡以防止扩散进外延层。
23.如权利要求20所述的装置,其中,该相对厚的层用作由支撑结构、热沉、散热器和连接器构成的组中选择的至少一种。
24.如权利要求15所述的装置,其中多个外延层位于共用衬底上并且进一步包括穿过共用衬底和多个外延层直至导电层的源极连接。
25.如权利要求15所述的装置,其中多个外延层位于共用衬底上并且进一步包括穿过共用衬底和多个外延层直至至少一个漏极接点的漏极连接。
26.如权利要求15所述的装置,其中多个外延层位于共用衬底上并且进一步包括穿过共用衬底和多个外延层直至至少一个栅极接点的栅极连接。
27.如权利要求20所述的装置,进一步包括穿过多个外延层直至导电层的源极连接。
28.如权利要求20所述的装置,进一步包括穿过多个外延层直至至少一个漏极接点的漏极连接。
29.如权利要求20所述的装置,进一步包括穿过多个外延层直至至少一个栅极接点的栅极连接。
30.如权利要求15所述的装置,其中,该晶体管是高电子迁移率晶体管。
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CN101351887A (zh) | 2009-01-21 |
SG131803A1 (en) | 2007-05-28 |
KR20080074892A (ko) | 2008-08-13 |
EP1949442A1 (en) | 2008-07-30 |
US8067269B2 (en) | 2011-11-29 |
JP2009513014A (ja) | 2009-03-26 |
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EP1949442A4 (en) | 2011-03-09 |
US20080224173A1 (en) | 2008-09-18 |
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