CN101292325B - 旋转卡盘 - Google Patents

旋转卡盘 Download PDF

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CN101292325B
CN101292325B CN2006800385830A CN200680038583A CN101292325B CN 101292325 B CN101292325 B CN 101292325B CN 2006800385830 A CN2006800385830 A CN 2006800385830A CN 200680038583 A CN200680038583 A CN 200680038583A CN 101292325 B CN101292325 B CN 101292325B
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权五珍
裴正龙
崔贞烈
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Semes Co Ltd
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Abstract

本发明涉及一种在旋转基底的同时进行如清洗处理和蚀刻处理等处理过程中所使用的旋转卡盘。该旋转卡盘包括旋转头,所述旋转头上放置有基底;驱动部件,所述驱动部件被配置为使旋转头转动;以及安装在所述旋转头上的固定支架,在对应于所述基底的平台区的位置,所述固定支架包括与所述基底的平台区的平台面相接触的接触表面,以防止所述平台区引起的涡流。由于固定支架与基底平台区形状相同,由平台区引起的气流不平衡可被抑制,从而可以将蚀刻剂均匀地注射到基底背面。

Description

旋转卡盘
技术领域
本发明涉及用于制造半导体器件的装置,更具体地说,本发明涉及在旋转基底的同时进行如清洗处理和蚀刻处理等处理过程中所使用的旋转卡盘。
背景技术
多层薄膜形成于半导体基底上以用于制备半导体器件。通常,在多层薄膜的形成过程中有必要采用蚀刻处理。由于沉积在半导体基底背面的薄膜在随后的处理中会成为外物,因此借助于单晶片蚀刻装置也对半导体基底的背面进行蚀刻处理,以去除所述外物。
在对半导体基底的背面进行蚀刻处理时所使用的传统旋转卡盘中,由旋转马达所产生的旋转力借助于传送带传送到围绕通孔轴的主轴,以使旋转头旋转。蚀刻剂通过安装在旋转头上的背部喷嘴被注入在半导体基底的背面,从而对半导体基底的背面进行蚀刻。
尽管传统的单晶片蚀刻装置在蚀刻带有凹陷(notch)的基底时没有问题出现,但是当传统的单晶片蚀刻装置在蚀刻带有平台区的基底(通常为200毫米的基底)时就会出现一些问题。这些问题如下:(1)由于基底平台区造成的气流不平衡导致基底背面的蚀刻均匀性降低;以及(2)从背部喷嘴流出的蚀刻剂从基底平台区渗透到形成有图案的顶面中,从而使毗邻平台区的图案受损。
发明内容
本发明的一个示例性实施例中提供一种用于降低气流不平衡的旋转卡盘。
本发明的另一个示例性实施例中提供一种用于增强基底背面的蚀刻均匀性的旋转卡盘。
本发明的另一个示例性实施例中提供一种旋转卡盘,其用于防止从背部喷嘴流出的蚀刻剂渗透到形成有图案的基底顶面中。
在一个示例性实施例中,所述旋转卡盘可包括可旋转的旋转头,所述旋转头上放置有基底;驱动单元,其被配置为使旋转头转动;主轴,其被配置为连接所述驱动单元和所述旋转头;以及固定支架,其安装在所述旋转头上,在对应于所述基底的平台区的位置,所述固定支架包括与所述基底的平台区的平台面相接触的接触平面,以防止所述平台区引起的涡流。
在一个示例性实施例中,所述旋转卡盘可包括可旋转的旋转头,所述旋转头上放置有基底,所述基底具有带多个平台面的边缘;驱动单元,其被配置为使所述旋转头转动;主轴,其被配置为连接所述驱动单元和所述旋转头;以及安装在所述旋转头的上边缘上的多个固定支架,以补足所述基底的形状,其中,多个固定支架中的每个包括板,该板具有与所述基底的平台面相接触的接触平面。
根据本发明,旋转卡盘包括与基底平台区具有相同形状的固定支架,用以防止由平台区引起的气流不平衡。于是,蚀刻剂被均匀地注射到基底的背面来增强背面蚀刻的均匀度,尤其用以防止注射到基底背面的蚀刻剂从平台区渗透到形成有图案的基底顶面中。
附图说明
图1图示了带有根据本发明的用于旋转基底的旋转卡盘的单晶片蚀刻装置;
图2和图3分别是图1所示旋转卡盘的俯视平面图和截面视图;
图4图示了带有根据本发明的用于旋转LCD基底的旋转卡盘的单晶片蚀刻装置;
图5是图4所示旋转卡盘的俯视平面图;
图6和图7分别是图示固定支架的行进过程的主要部件的放大图,。
具体实施方式
图1图示了根据本发明的一个实施例的旋转卡盘100,图2和图3分别是旋转卡盘100的俯视平面图和截面视图。
参照图1,旋转卡盘100可应用于蚀刻基底W的背面的单晶片蚀刻装置200。由于单晶片蚀刻装置200用酸性溶液(以下称为蚀刻剂)去除形成于基底表面上的预定层,容器210设置在旋转卡盘100周围以保护周边部件。在容器210周围可提供有多个部件(未示出),以用于蚀刻由容器210内的旋转卡盘100所固定的基底。
根据单晶片蚀刻装置200,在使用旋转卡盘100旋转基底的同时,对基底背面进行蚀刻处理。
下面将参照图1至图3,更详尽地描述旋转卡盘100的结构。
旋转卡盘100包括旋转头110,旋转头110上放置有基底W。旋转头110的顶面112的边缘处安装有多个卡销120。卡销120以一定间隔隔开并向上凸出。多个支撑销114安装在卡销120的内侧。与卡销120类似,支撑销114以一定间隔隔开并向上凸出。支撑销114用于支撑基底W的背面W1,并且卡销120用于防止基底W受离心力的作用而从旋转头110上脱离。基底W由卡销120固定,同时受旋转头110上的支撑销114的支撑,卡销120是安装于旋转头110上的固定元件。借助于卡销120的离心旋转操作,基底W的后表面边缘以及侧面被固定或不固定。
旋转头110与主轴130相连接,主轴130是用于将驱动单元的旋转马达140所产生的旋转力传送到旋转头110的空心轴。背部喷嘴单元150包括供应管152以及喷嘴154。供应管152是蚀刻剂通过主轴130空心部分的通道,喷嘴154安装在旋转头110的顶面中心。喷嘴154与供应管152相连接并暴露于旋转头110的中心部分,用于将蚀刻剂注入到基底背面W1上以蚀刻背面W1。供应管152可以是一种预定的管,也可以是由主轴130的内部所限定的空心管状空间。通过旋转基底W,经由喷嘴154注入到背面W1的中心部分的蚀刻剂可以很容易地注射到基底W的边缘。
固定支架160是构成根据本发明的旋转卡盘100的元件中最重要的一个。固定支架160安装在旋转头110上以防止由旋转的基底W的平台区W2产生的涡流(vortex),固定支架160设置于与平台区W2相对应的位置,并包括板162以及基座164,基座164用于从旋转头110的顶面112支撑板162。板162包括接触面162a以及曲面162b,接触面162a与平台区W2的平台面W2a相接触,曲面162b与基底W具有相同的圆周并与平台区W2形状相同。板162与基底W厚度相同。板162由基座164支撑,使其从旋转头110的顶面112与基底W具有相同高度。板162的形状随着置于旋转头110上的基底W的平台区W2的形状与尺寸而改变。如上配置的固定支架160安装在置于旋转头110上的基底W的平台区W2处,使基底W形成完好的圆形。
当基底W置于旋转头110上时,固定支架160设置于基底W的平台区W2处,从而使基底W形成完好的圆形。于是,当基底W高速旋转时,旋转卡盘100a能够抑制基底W的背面(或顶面)W1和旋转头110的顶面112之间湍流的生成,并能防止基底W的背面W1处的气流失衡。
具体地说,经由背部喷嘴单元150的喷嘴154注射到基底W的背面W1上的蚀刻剂从背面W1的中心部分扩散到边缘。通常,扩散到平台区周围的蚀刻剂会向上流向基底W的顶面。然而,根据本发明的固定支架160被配置为防止蚀刻剂流向基底顶面。应当注意的是,此基底是带有平台区的半导体基底。
图4图示了一个单晶片蚀刻装置200a,其具有根据本发明的一个改进实施例的用于旋转LCD基底的旋转卡盘100a。图5为图4所示旋转卡盘100a的俯视图,图6和图7分别是图示固定支架的行进过程的主要元件的放大视图。
参照图4和图5,旋转卡盘100a可用于单晶片蚀刻装置200a,用于蚀刻带有四个平台区的LCD基底S的表面。然而,本发明可以适用于任何使用液态或气态处理流体来处理LCD基底的装置(例如,化学涂敷装置,显影装置等)。尽管在优选实施例中描述了旋转蚀刻中所使用的单晶片蚀刻装置,但该实施例并不限用于蚀刻装置。
单晶片蚀刻装置200a与如上所述的单晶片蚀刻装置200具有相同的结构和功能。但在该改进实施例中,处理对象是矩形平板的LCD基底S。因此,在旋转卡盘100a上设置有四个固定支架160。
LCD基底S由安装在旋转头110的顶面112上的支撑销114来支撑,被支撑的LCD基底S通过安装在旋转头110的边缘处的四个固定支架160固定。如图6和图7所示,LCD基底S的多个边缘平台面S1可以通过固定支架160的来回行进而被固定或者不被固定。多个固定支架160通过柱状驱动单元180而来回行进。
多个固定支架160,作为本发明中最重要的部件,其安装在旋转头110的上边缘处,以用于抑制由旋转的LCD基底S的平台面S1产生的涡流。这些固定支架160分别设置在与LCD基底S的多个平台面S1相对应的位置。固定支架160的板162包括接触表面162a以及曲面162b,接触表面162a与LCD基底S的平台面S1相接触。而且,固定支架160的板162的形状可以互补地使LCD基底S的形状形成完好的圆形。固定支架160的板162与LCD基底S有相同的厚度,并由基座164支撑,以使其从旋转头110的顶面112与LCD基底S具有相同的高度。板162的形状随着置于旋转头110上的LCD基底S的平台面S1的形状与尺寸而改变。如上配置的多个固定支架160设置在置于旋转头110上的LCD基底S的平台面S1处,以使LCD基底S形成完好的圆形。
当LCD基底S置于旋转头110上时,多个固定支架160设置于LCD基底S的平台区S1处,从而使LCD基底S形成完好的圆形。于是,当LCD基底S高速旋转时,旋转卡盘100a能够抑制LCD基底S的背面(或顶面)W1和旋转头110的顶面112之间湍流的生成,并且能防止LCD基底S的背面W1处的气流失衡。
应当注意的是,所述LCD基底S可以是用于平板显示器的矩形板基底,所述平板显示器例如是等离子显示板(PDP),场致发射显示器(FED)以及有机发光器件(OLED)。
尽管结合附图所示的本发明的实施例描述了本发明,但本发明不限于此。对本领域技术人员显而易见的是,在不脱离本发明的范围和精神的情况下,可以对本发明做出各种替代、修改和变化。
本发明适用于在支撑以及旋转基底的同时所进行的各种基底处理。

Claims (6)

1.一种旋转卡盘,其包括:
可旋转的旋转头,其上放置有基底;
驱动单元,其被配置为使所述旋转头旋转;
主轴,其被配置为连接所述驱动单元和所述旋转头;以及
固定支架,其安装在所述旋转头的边缘处并设置于与所述基底的平台区相对应的位置;所述固定支架包括板以及基座,所述基座用于从所述旋转头的顶面支撑所述板,所述板包括接触面以及曲面,所述接触面与所述平台区的平台面相接触,所述曲面与所述基底具有相同的圆周并与所述平台区形状相同;所述板与所述基底具有相同厚度,所述板由所述基座支撑,以使得所述板从所述旋转头的顶面与所述基底具有相同的高度;所述板的形状随着置于所述旋转头上的所述基底的平台区的形状与尺寸而改变,所述固定支架安装在置于所述旋转头上的所述基底的平台区处,使得所述基底形成完好的圆形,以防止所述平台区引起的涡流。
2.根据权利要求1所述的旋转卡盘,其中,所述旋转卡盘还包括安装于所述旋转头的上边缘处的固定元件,以用来固定所述基底的下边缘和侧面。
3.根据权利要求2所述的旋转卡盘,其中,所述旋转卡盘还包括可旋转地安装于所述主轴内部的背部喷嘴单元,以用于向所述基底的背面注射化学物质。
4.一种旋转卡盘,其包括:
可旋转的旋转头,其上放置有基底,所述基底具有带有多个平台面的边缘;
驱动单元,其被配置为使所述旋转头旋转;
主轴,其被配置为连接所述驱动单元和所述旋转头;以及
多个固定支架,其安装在所述旋转头的边缘处并分别设置于与所述基底的所述多个平台面相对应的位置;所述多个固定支架的每一个包括板以及基座,所述基座用于从所述旋转头的顶面支撑所述板,所述板包括接触面以及曲面,所述接触面与所述平台面相接触;所述板与所述基底具有相同厚度,所述板由所述基座支撑,以使得所述板从所述旋转头的顶面与所述基底具有相同高度;所述板的形状随着置于所述旋转头上的所述基底的平台面的形状与尺寸而改变;所述多个固定支架安装在置于所述旋转头上的所述基底的所述多个平台面处,所述板的所述曲面使得所述基底形成完好的圆形。
5.根据权利要求4所述的旋转卡盘,还包括:
背部喷嘴单元,其可旋转地安装于所述主轴的内部,以向所述基底的背面注射化学物质。
6.根据权利要求4所述的旋转卡盘,其中,所述基底是用于等离子显示器(PDP)、液晶显示器(LCD)、场致发射显示器(FED)以及有机发光器件(OLED)的矩形板基底。
CN2006800385830A 2005-10-26 2006-10-26 旋转卡盘 Active CN101292325B (zh)

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