CN101283493A - 高输出红色半导体激光器 - Google Patents
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Abstract
本发明提供一种高输出红色半导体激光器,其改善散热特性抑制激光器元件的温度上升,无需增大元件的散热面积。该发明在倾斜n-GaAs衬底(2)上层叠有n-AlGaInP包层(3)、AlGaInP光导层(4)、MQW有源层(5)、AlGaInP光导层(6)、p-AlGaInP第1包层(7)、AlGaInP蚀刻停止层(8)、n-AlGaInP阻挡层(11)、p-AlGaAs第2包层(9)、p-GaAs接触层(10)、p电极(12),在n-GaAs衬底(2)的背面形成有n电极(1)。由于第2包层(9)把热传导率良好的AlGaAs作为其成分,因此可以提高激光器元件的散热特性。
Description
技术领域
本发明涉及在DVD等应用的高输出红色半导体激光器。
背景技术
随着记录型DVD市场的成熟,由于DVD以高倍速度写入,因此波长650nm频带的AlGaInP类红色半导体激光器就需要超过250mW的高输出。
该红色半导体激光器的一般结构示于图4,具有n-GaAs衬底32和在其上成长的半导体层叠结构。该半导体层叠结构从衬底侧开始依次由n-AlGaInP包层33、MQW有源层34、p-AlGaInP第1包层35、p-GaInP蚀刻停止层36、n-GaAs阻挡层(ブロツク層)37、p-AlGaInP第2包层38、p-GaInP缓冲层39、p-GaAs盖层40构成。另外,在n-GaAs衬底32的下面形成有n电极31,在p-GaAs盖层40的上面形成有p电极41。
图4的红色半导体激光器具有脊部埋入结构,其由第2包层38和缓冲层39形成带状的脊部A,在该脊部A的两侧配置n-GaAs阻挡层37,用p-GaAs盖层40覆盖p-GaInP缓冲层39和n-GaAs阻挡层37。
根据脊部A的折射率和在脊侧面配置的n-GaAs阻挡层37的折射率之差,在水平方向封入光。电流不在成为反偏置的n-GaAs阻挡层37及其下部流通,而在带状的脊部A流通。
另外,如果直接接合p-GaAs盖层40和p-AlGaInP第2包层38,由于带隙差大,对作为p侧区域的载流子的空穴,在接合界面旁边形成大的壁垒,阻止空穴的使之不流通,使电流难以流通。为了防止这种现象,在p-GaAs盖层40和p-AlGaInP第2包层38之间,夹着带隙成为两者中间的p-GaInP缓冲层39,降低在接合界面形成的壁垒,使空穴易于流通。
如果在p电极41和n电极31之间通电,电流则因作为电流阻挡层的n-GaAs阻挡层变狭窄,可以从相当于脊部A的下部位置的MQW有源层34的中央部得到发光。然而,如果想要得到超过250mW的高输出,就需要增大动作电流,随之,由各层的电阻产生的焦耳热也增加,从激光器元件内部产生的热量增多。
为了防止因从激光器元件内部产生的热量导致温度上升,在对半导体激光器元件进行模块化时,如图5所示,在由光学玻璃窗52、引线管脚51等构成的封装上安装散热片54,在该散热片54上安装激光器元件53,从而冷却激光器元件53。
专利文献1:日本特开平9-205249号公报
在上述现有的红色半导体激光器中,因焦耳热增加,从激光器元件内部产生的热量增多时,由于作为基体材料的AlGaInP的热传导率不良,特别是热量容易蓄留在元件内部,导致激光器元件的温度过度地上升,因此发光效率下降,或者导致最大输出的下降。另外,如图5所示,即使通过散热片冷却激光器元件,如果激光器元件的散热特性不良,由于冷却有限,因此存在不能充分冷却的问题。
于是,作为促进激光器元件散热的方法,提出了增大激光器元件的表面面积而增加散热量的方案。一般地,为了改善激光器元件的温度特性,有必要减小激光器元件内部的电流密度,而且增加谐振器长度,因此要增大激光器元件的散热面积,需要进一步增加激光器元件的谐振器方向(轴向)的长度。
但是,如果采用如上所述方案,激光器元件就变得相当大,其价格也变得非常昂贵。另外,如图5所示,安装激光器元件的封装大小,通常按照一定的大小生产,如果制作比该封装大小长且大的激光器元件,就存在不能安装的问题。
发明内容
本发明是为解决上述的课题而创造的方案,其所要解决的技术问题是,提供一种通过改善散热特性抑制温度上升,无需增大元件的散热面积的高输出红色半导体激光器。
为了达到上述目的,方面1所述的发明是一种AlGaInP类的高输出红色半导体激光器,其在n型半导体衬底上,至少依次具有n型包层、有源层及p型包层,在有源层的上部具有含有所述p型包层的带状的脊部,其特征在于,用含有AlGaAs的半导体形成构成所述脊部的半导体层的一部分。
另外,方面2所述的发明是:如方面1所述的、特征为用含有AlGaAs的半导体形成所述p型包层的高输出红色半导体激光器。
另外,方面3所述的发明是:如方面1所述的、特征为所述p型包层通过在中间形成的蚀刻停止层分成有脊部的第2p型包层和不含有脊部的第1p型包层的高输出红色半导体激光器。
另外,方面4所述的发明是:如方面3所述的、特征为用含有AlGaAs的半导体形成所述第2p型包层的高输出红色半导体激光器。
另外,方面5所述的发明是:如方面4所述的、特征为用含有AlGaAs的半导体形成所述第1p型包层的高输出红色半导体激光器。
另外,方面6所述的发明是:如方面1至5中任一项所述的、特征为用含有AlGaAs的半导体形成所述n型包层的高输出红色半导体激光器。
根据本发明,由于可以通过含有良好热传导率的AlGaAs的半导体,形成构成脊部的半导体层的一部分例如p型包层,因此在激光器元件内部产生的热容易传导至p电极侧,并且来自p电极的热的辐射容易进行,所以可以防止温度的过度上升。
另外,由于通过用含有热传导率良好的AlGaAs的半导体构成包层,可以改善散热特性,因此无需增大激光器元件的散热面积。
附图说明
图1是表示本发明的高输出红色半导体激光器的剖面结构的图;
图2是表示本发明的高输出红色半导体激光器的其他剖面结构的图;
图3是表示本发明的高输出红色半导体激光器的其他剖面结构的图;
图4是表示以往的红色半导体激光器的剖面结构的图;
图5是安装半导体激光器元件的封装结构的图。
附图标记说明
1 n电极
2 n-GaAs衬底
3 n-AlGaInP包层
4 AlGaInP光导层
5 MQW有源层
6 AlGaInP光导层
7 p-AlGaInP第1包层
8 AlGaInP蚀刻停止层
9 p-AlGaAs第2包层
10 p-GaAs接触层
11 n-AlGaInP阻挡层
12 p电极
31 n-AlGaAs包层
71 p-AlGaAs第1包层
具体实施方式
下面,参照附图对本发明的一实施例进行说明。图1表示根据本发明的高输出红色半导体激光器的剖面结构。
在倾斜n-GaAs衬底2上层叠有n-AlGaInP包层3、AlGaInP光导层4、MQW有源层5、AlGaInP光导层6、p-AlGaInP第1包层7、AlGaInP蚀刻停止层8、n-AlGaInP阻挡层11、p-AlGaAs第2包层9、p-GaAs接触层10和p电极12,在n-GaAs衬底2的背面侧形成有n电极1。n-GaAs衬底2采用其晶体取向为从(001)倾斜10~15度的衬底。
MQW有源层5由3层GaInP阱层和2层非掺杂的(Al0.5Ga0.5)0.5In0.5P势垒层(バリア層)形成。n-AlGaInP包层3由掺杂n型杂质Si的(Al0.7Ga0.3)0.5In0.5P构成,AlGaInP光导层4和AlGaInP光导层6由非掺杂的(Al0.5Ga0.5)0.5In0.5P构成,p-AlGaInP第1包层7由掺杂p型杂质Zn的(Al0.7Ga0.3)0.5In0.5P构成,AlGaInP蚀刻停止层8是采用3层掺杂p型杂质Zn的无应变的(Al0.1Ga0.9)0.5In0.5P和2层掺杂p型杂质Zn的(Al0.4Ga0.6)0.5In0.5P并交替层叠的层,p-AlGaAs第2包层9由掺杂p型杂质Zn的Al0.5GaAs构成,p-GaAs接触层10由掺杂p型杂质Zn的GaAs构成,n-AlGaInP阻挡层11由掺杂n型杂质Si的(Al0.8Ga0.2)0.5In0.5P构成。P电极12采用Ti和Au的多层金属膜,n电极1则采用Au、Ge、Ni的合金层和Ti和Au的多层金属膜。
MQW有源层5是从两侧用AlGaInP光导层4、6夹着而构成的。这些光导层是为了在垂直方向封入光而形成的层,可以根据光导层的组成、厚度控制垂直扩展角度。如果减弱该垂直方向的光的封入,则发光点在垂直方向扩大,射出光束的垂直扩展角度(FFP的层叠方向的大小)降低。
如图1所示的高输出红色半导体激光器,具有用p-AlGaAs第2包层9和p-GaAs接触层10形成带状的脊部B、用n-AlGaInP阻挡层11覆盖该脊部B的两侧的脊部埋入结构。电流不在成为反偏置的n-AlGaInP阻挡层11及其下部流通,而在带状的脊部B流通。
制造方法利用已知的MOCVD法或光刻技术等按照如下步骤进行。另外,各层的合适的膜厚随着半导体材料的组成比例等而变化,但是在本实施例中,各层的膜厚根据所述的各层的组成比例如下形成。
在n-GaAs衬底2上,通过利用MOCVD法(有机金属化学气相成长法)的第1次结晶成长,依次形成2.5μm厚的n-AlGaInP包层3、5nm厚的AlGaInP光导层4、MQW有源层5、10nm厚的AlGaInP光导层6、0.24μm厚的p-AlGaInP第1包层7、AlGaInP蚀刻停止层8、1.25μm厚的p-AlGaAs第2包层9、0.2μm厚的p-GaAs接触层10,得到双异质结构的晶片。另外,MQW有源层5是具有3层6nm厚的阱层、2层4nm厚的势垒层的多重量子阱结构;蚀刻停止层8是具有3层2nm厚的无应变的(Al0.1Ga0.9)0.5In0.5P、2层5nm厚的(Al0.4Ga0.6)0.5In0.5P的多层结构。
其次,将带状的SiO2作为掩模,通过干式蚀刻将p-GaAs接触层10和p-AlGaAs第2包层9进行蚀刻形成脊部B。再其次,利用盐酸或稀硫酸和双氧水进行湿式蚀刻,直至达到蚀刻停止层8进行蚀刻。通过蚀刻停止层8,脊蚀刻自动停止,可以良好地控制形成脊。
然后,将晶片回送到MOCVD装置内,通过第2次的结晶成长形成n-AlGaInP阻挡层11。然后,通过HF处理去除SiO2掩模。最后,通过研磨、抛光,使晶片薄化至100μm左右,并且通过真空蒸镀法形成n电极1和p电极12。
如果在p电极12和n电极1之间一通电,就发生振荡,激光继续产生,但是,由于电阻等的关系,特别是在p侧的层或MQW有源层5产生大量的焦耳热。产生的这些热量虽然在扩散,但是由于第2包层9将含有热传导率良好的AlGaAs作为其成分,因此热量迅速向第2包层9传导、到达p-GaAs接触层10。由于p-GaAs接触层10薄,因此热量立即扩散到p电极12,从p电极12进行散热。因为AlGaAs的热传导率达AlGaInP热传导率的约2倍,所以与如图4所示的红色半导体激光器比较,热可以迅速扩散。这样通过将AlGaAs作为成分的半导体形成构成脊部B的半导体层的一部分,可以改善散热特性,防止激光器元件的温度过度地上升。
然而,AlGaAs混晶系列中,通过降低Al成分,可以更加提高热传导率(低热阻化),但是另一方面,由于包层的带隙能减少,不能阻挡少数载流子的流出,因此如本实施例所述,包层在40%~70%,优选在50%~60%范围构成Al0.5GaAs和Al组成。在本实施例中,Al成分为50%。
图2表示在图1的结构中用p-AlGaAs第1包层71代替p-AlGaInP第1包层7的结构。第1包层71与第2包层9同样,由掺杂p型杂质Zn的Al0.5GaAs构成。如上所述,由于AlGaAs的热传导率高,因此在MQW有源层5或p侧的层产生的焦耳热迅速向p-AlGaAs第1包层71传导,进而也在p-AlGaAs第2包层9中迅速扩散传导到p电极侧12,所以散热特性得到改善。另外,为了提高散热特性,优选降低脊部B的高度H,缩小热的扩散距离。优选降低高度H,对于图1和图3的结构同样适用。
图3表示在图2的结构中用n-AlGaAs包层31代替n-AlGaInP包层3的结构。包层31由掺杂n型杂质Si的Al0.5GaAs构成。包层31通过由将热传导率良好的AlGaAs作为成分的半导体构成,也可以使在n侧的层产生的焦耳热有效地进行散热,且在n侧的层产生的热,迅速向n-AlGaAs包层31传导,容易扩散至p电极12或n电极1侧,散热特性得到改善。
另外,在实施例中所述的各层的膜厚并不限于此。例如,n型包层3、31的膜厚约为1~3μm,n侧光导层4的膜厚为5~30nm,MQW有源层5的阱层的膜厚约为3~9nm,MQW有源层5的势垒层的膜厚约为3~9nm,p侧光导层6的膜厚为5~30nm,p型第1包层7、71的膜厚为0.2~0.4μm,蚀刻停止层8的无应变的(Al0.1Ga0.9)0.5In0.5P层的膜厚约为1~5nm,蚀刻停止层8的(Al0.4Ga0.6)0.5In0.5P层的膜厚约为3~10nm,p型第2包层9的膜厚在0.5~2μm范围,进一步优选为0.8~1.5μm,p型接触层10的膜厚为0.2~0.8μm。
Claims (6)
1.一种高输出红色半导体激光器,其是AlGaInP类的高输出红色半导体激光器,其在n型半导体衬底上至少依次具有n型包层、有源层和p型包层,并且在有源层的上部具有含有所述p型包层的带状的脊部,其特征在于,
用含有AlGaAs的半导体形成构成所述脊部的半导体层的一部分。
2.如权利要求1所述的高输出红色半导体激光器,其特征在于,用含有AlGaAs的半导体形成所述p型包层。
3.如权利要求1所述的高输出红色半导体激光器,其特征在于,所述p型包层通过在中间形成的蚀刻停止层分离为有脊部的第2p型包层和不含有脊部的第1p型包层。
4.如权利要求3所述的高输出红色半导体激光器,其特征在于,用含有AlGaAs的半导体形成所述第2p型包层。
5.如权利要求4所述的高输出红色半导体激光器,其特征在于,用含有AlGaAs的半导体形成所述第1p型包层。
6.如权利要求1至5中任一项所述的高输出红色半导体激光器,其特征在于,用含有AlGaAs的半导体形成所述n型包层。
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EP (1) | EP1923973A4 (zh) |
JP (1) | JP2007049088A (zh) |
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CN106300012A (zh) * | 2016-09-19 | 2017-01-04 | 山东华光光电子股份有限公司 | 一种含有高选择性腐蚀阻挡层的808nm半导体激光器 |
CN112260060A (zh) * | 2020-12-22 | 2021-01-22 | 武汉敏芯半导体股份有限公司 | 一种分布式反馈激光器 |
CN115166893A (zh) * | 2022-08-02 | 2022-10-11 | 苏州国顺激光技术有限公司 | 一种用于激光器件的环形纤芯光纤 |
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JP2893827B2 (ja) * | 1990-03-27 | 1999-05-24 | ソニー株式会社 | 半導体レーザ |
JPH04199589A (ja) * | 1990-11-28 | 1992-07-20 | Mitsubishi Electric Corp | 可視光面発光レーザ装置 |
EP0540799A1 (en) * | 1991-11-04 | 1993-05-12 | International Business Machines Corporation | Improved AlGaInP diodes emitting visible light |
US5811839A (en) * | 1994-09-01 | 1998-09-22 | Mitsubishi Chemical Corporation | Semiconductor light-emitting devices |
JP2929990B2 (ja) | 1996-01-26 | 1999-08-03 | 日本電気株式会社 | 半導体レーザ |
JPH1075012A (ja) * | 1996-06-27 | 1998-03-17 | Mitsubishi Electric Corp | 半導体レーザ装置,及びその製造方法 |
US5898721A (en) * | 1997-02-14 | 1999-04-27 | Opto Power Corporation | InGaAsP/AlGaAs/GaAs hetero structure diode laser containing indium |
JP3761130B2 (ja) * | 1998-02-04 | 2006-03-29 | 三井化学株式会社 | 面発光レーザ装置 |
JP3889896B2 (ja) * | 1999-04-07 | 2007-03-07 | 三菱化学株式会社 | 半導体発光装置 |
JP2001060741A (ja) * | 1999-08-20 | 2001-03-06 | Nec Corp | 半導体発光素子およびその製造方法 |
JP4865186B2 (ja) * | 2002-01-17 | 2012-02-01 | パナソニック株式会社 | Iii−v族化合物半導体装置及びその製造方法 |
US6841409B2 (en) * | 2002-01-17 | 2005-01-11 | Matsushita Electric Industrial Co., Ltd. | Group III-V compound semiconductor and group III-V compound semiconductor device using the same |
KR20060038057A (ko) * | 2004-10-29 | 2006-05-03 | 삼성전기주식회사 | 반도체 레이저 소자 및 그 제조 방법 |
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CN106300012A (zh) * | 2016-09-19 | 2017-01-04 | 山东华光光电子股份有限公司 | 一种含有高选择性腐蚀阻挡层的808nm半导体激光器 |
CN112260060A (zh) * | 2020-12-22 | 2021-01-22 | 武汉敏芯半导体股份有限公司 | 一种分布式反馈激光器 |
CN112260060B (zh) * | 2020-12-22 | 2021-03-09 | 武汉敏芯半导体股份有限公司 | 一种分布式反馈激光器 |
CN115166893A (zh) * | 2022-08-02 | 2022-10-11 | 苏州国顺激光技术有限公司 | 一种用于激光器件的环形纤芯光纤 |
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KR20080061357A (ko) | 2008-07-02 |
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TW200715676A (en) | 2007-04-16 |
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JP2007049088A (ja) | 2007-02-22 |
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