CN101257019B - 沿着半导体芯片的长边具有细长静电保护元件的半导体器件 - Google Patents
沿着半导体芯片的长边具有细长静电保护元件的半导体器件 Download PDFInfo
- Publication number
- CN101257019B CN101257019B CN2008100812653A CN200810081265A CN101257019B CN 101257019 B CN101257019 B CN 101257019B CN 2008100812653 A CN2008100812653 A CN 2008100812653A CN 200810081265 A CN200810081265 A CN 200810081265A CN 101257019 B CN101257019 B CN 101257019B
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- zone
- diffusion
- output circuit
- long limit
- protection element
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- 239000004065 semiconductor Substances 0.000 title claims description 57
- 238000009792 diffusion process Methods 0.000 claims description 69
- 230000002093 peripheral effect Effects 0.000 claims 1
- 238000003466 welding Methods 0.000 claims 1
- 230000003068 static effect Effects 0.000 description 21
- 238000009826 distribution Methods 0.000 description 19
- 239000010410 layer Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000004744 fabric Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (14)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007046382 | 2007-02-27 | ||
JP2007-046382 | 2007-02-27 | ||
JP2007046382A JP5131814B2 (ja) | 2007-02-27 | 2007-02-27 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101257019A CN101257019A (zh) | 2008-09-03 |
CN101257019B true CN101257019B (zh) | 2011-05-11 |
Family
ID=39714881
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008100812653A Expired - Fee Related CN101257019B (zh) | 2007-02-27 | 2008-02-26 | 沿着半导体芯片的长边具有细长静电保护元件的半导体器件 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8072033B2 (zh) |
JP (1) | JP5131814B2 (zh) |
KR (1) | KR101009305B1 (zh) |
CN (1) | CN101257019B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5503208B2 (ja) | 2009-07-24 | 2014-05-28 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
KR102441202B1 (ko) * | 2017-11-17 | 2022-09-06 | 주식회사 엘엑스세미콘 | 드라이브 ic와 이를 포함한 표시장치 |
KR102563847B1 (ko) * | 2018-07-19 | 2023-08-04 | 주식회사 엘엑스세미콘 | 소스 드라이버 집적 회로와 그 제조방법 및 그를 포함한 표시장치 |
CN113097182B (zh) * | 2020-01-08 | 2022-04-12 | 长鑫存储技术有限公司 | 半导体封装结构 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3967295A (en) * | 1975-04-03 | 1976-06-29 | Rca Corporation | Input transient protection for integrated circuit element |
US4757363A (en) * | 1984-09-14 | 1988-07-12 | Harris Corporation | ESD protection network for IGFET circuits with SCR prevention guard rings |
US5406513A (en) * | 1993-02-05 | 1995-04-11 | The University Of New Mexico | Mechanism for preventing radiation induced latch-up in CMOS integrated circuits |
JP3075892B2 (ja) * | 1993-07-09 | 2000-08-14 | 株式会社東芝 | 半導体装置 |
KR960015900A (ko) * | 1994-10-06 | 1996-05-22 | 반도체 장치 및 그 제조방법 | |
US5828110A (en) * | 1995-06-05 | 1998-10-27 | Advanced Micro Devices, Inc. | Latchup-proof I/O circuit implementation |
KR100334969B1 (ko) * | 1999-12-17 | 2002-05-04 | 박종섭 | Esd 회로의 입/출력 패드 구조 |
KR100312385B1 (ko) * | 1999-12-29 | 2001-11-03 | 박종섭 | 플래쉬 메모리 소자의 정전기 방전 보호 회로 |
US20010043449A1 (en) * | 2000-05-15 | 2001-11-22 | Nec Corporation | ESD protection apparatus and method for fabricating the same |
JP4803866B2 (ja) * | 2000-07-31 | 2011-10-26 | ローム株式会社 | 半導体装置 |
TW502459B (en) * | 2001-01-03 | 2002-09-11 | Taiwan Semiconductor Mfg | Diode structure with high electrostatic discharge protection and electrostatic discharge protection circuit design of the diode |
US6888248B2 (en) * | 2003-03-26 | 2005-05-03 | Taiwan Semiconductor Manufacturing Co., Ltd | Extended length metal line for improved ESD performance |
JP2004327525A (ja) * | 2003-04-22 | 2004-11-18 | Matsushita Electric Ind Co Ltd | 半導体集積回路装置 |
KR100532463B1 (ko) | 2003-08-27 | 2005-12-01 | 삼성전자주식회사 | 정전기 보호 소자와 파워 클램프로 구성된 입출력 정전기방전 보호 셀을 구비하는 집적 회로 장치 |
JP2005109163A (ja) * | 2003-09-30 | 2005-04-21 | Nec Electronics Corp | 半導体素子 |
TWI234425B (en) | 2004-03-03 | 2005-06-11 | Toppoly Optoelectronics Corp | Electrostatic discharge protection method for display and device thereof |
JP4312696B2 (ja) * | 2004-10-18 | 2009-08-12 | Necエレクトロニクス株式会社 | 半導体集積装置 |
US7446990B2 (en) * | 2005-02-11 | 2008-11-04 | Freescale Semiconductor, Inc. | I/O cell ESD system |
JP4951902B2 (ja) * | 2005-06-30 | 2012-06-13 | セイコーエプソン株式会社 | 集積回路装置及び電子機器 |
JP4010332B2 (ja) * | 2005-06-30 | 2007-11-21 | セイコーエプソン株式会社 | 集積回路装置及び電子機器 |
JP4186970B2 (ja) | 2005-06-30 | 2008-11-26 | セイコーエプソン株式会社 | 集積回路装置及び電子機器 |
JP2007067012A (ja) * | 2005-08-29 | 2007-03-15 | Matsushita Electric Ind Co Ltd | 半導体装置 |
KR101194040B1 (ko) * | 2005-11-22 | 2012-10-24 | 페어차일드코리아반도체 주식회사 | 트랜지스터에 프리휠링 다이오드가 구현된 고집적회로 |
-
2007
- 2007-02-27 JP JP2007046382A patent/JP5131814B2/ja not_active Expired - Fee Related
-
2008
- 2008-02-04 US US12/068,188 patent/US8072033B2/en not_active Expired - Fee Related
- 2008-02-26 CN CN2008100812653A patent/CN101257019B/zh not_active Expired - Fee Related
- 2008-02-27 KR KR1020080017819A patent/KR101009305B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CN101257019A (zh) | 2008-09-03 |
US8072033B2 (en) | 2011-12-06 |
KR101009305B1 (ko) | 2011-01-18 |
KR20080079626A (ko) | 2008-09-01 |
JP5131814B2 (ja) | 2013-01-30 |
JP2008210995A (ja) | 2008-09-11 |
US20080203435A1 (en) | 2008-08-28 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: HU'NAN QIU ZEYOU PATENT STRATEGIC PLANNING CO., LT Free format text: FORMER OWNER: QIU ZEYOU Effective date: 20101101 |
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C41 | Transfer of patent application or patent right or utility model | ||
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Free format text: CORRECT: ADDRESS; FROM: 410011 28/F, SHUNTIANCHENG, NO.59, SECTION 2 OF FURONG MIDDLE ROAD, CHANGSHA CITY, HU'NAN PROVINCE TO: 410205 JUXING INDUSTRY BASE, NO.8, LUJING ROAD, CHANGSHA HIGH-TECH. DEVELOPMENT ZONE, YUELU DISTRICT, CHANGSHA CITY, HU'NAN PROVINCE |
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TA01 | Transfer of patent application right |
Effective date of registration: 20101108 Address after: Kanagawa, Japan Applicant after: Renesas Electronics Corporation Address before: Kanagawa, Japan Applicant before: NEC Corp. |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CP02 | Change in the address of a patent holder | ||
CP02 | Change in the address of a patent holder |
Address after: Tokyo, Japan Patentee after: Renesas Electronics Corporation Address before: Kanagawa, Japan Patentee before: Renesas Electronics Corporation |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110511 Termination date: 20190226 |