CN113463052B - Ultrasonic cleaning high-efficiency heat dissipation type magnetron sputtering cathode - Google Patents

Ultrasonic cleaning high-efficiency heat dissipation type magnetron sputtering cathode Download PDF

Info

Publication number
CN113463052B
CN113463052B CN202110756278.1A CN202110756278A CN113463052B CN 113463052 B CN113463052 B CN 113463052B CN 202110756278 A CN202110756278 A CN 202110756278A CN 113463052 B CN113463052 B CN 113463052B
Authority
CN
China
Prior art keywords
cooling
heat
assembly
magnetron sputtering
magnets
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202110756278.1A
Other languages
Chinese (zh)
Other versions
CN113463052A (en
Inventor
肖舒
吴熠
李嘉坤
孙泽润
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
South China University of Technology SCUT
Original Assignee
South China University of Technology SCUT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by South China University of Technology SCUT filed Critical South China University of Technology SCUT
Priority to CN202110756278.1A priority Critical patent/CN113463052B/en
Publication of CN113463052A publication Critical patent/CN113463052A/en
Application granted granted Critical
Publication of CN113463052B publication Critical patent/CN113463052B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering

Abstract

An ultrasonic cleaning high-efficiency heat dissipation type magnetron sputtering cathode comprises a mounting assembly and a shielding cover arranged on the mounting assembly, wherein a target material assembly, an ultrasonic cleaning cooling assembly, a magnetic assembly and a magnetic short circuit assembly are sequentially mounted in the shielding cover from top to bottom; the ultrasonic cleaning and cooling assembly comprises a cooling element, a heat conducting element and a plurality of ultrasonic vibrators arranged on the outer side wall of the cooling element; the top of the cooling element is concave inwards to form a cooling flow channel for a cooling medium to pass through, and the bottom of the heat conducting element is provided with a plurality of heat conducting columns which protrude outwards and extend into the cooling flow channel. In addition, scale produced in the cooling flow channel and particles on the surface of the target can be automatically cleaned through the ultrasonic vibrator, so that the cooling efficiency is improved, the target ignition is reduced, and the speed and the quality of a deposited coating are improved.

Description

Ultrasonic cleaning high-efficiency heat dissipation type magnetron sputtering cathode
Technical Field
The invention relates to the technical field of plasma material surface treatment, in particular to an ultrasonic cleaning high-efficiency heat dissipation type magnetron sputtering cathode.
Background
The flexible OLED display technology has the characteristics of flexibility, high response speed, high color gamut and wide viewing angle, and has great advantages in picture quality, power consumption and cost compared with the conventional display technology, so that the flexible OLED display technology replaces the conventional display technology on a large scale and is applied to the fields of televisions, mobile phones, flat panel displays and the like.
At present, an encapsulation Mask (CVD Mask) is mainly adopted on the surface of the OLED flexible display screen, and the barrier insulation and corrosion resistance characteristics of the OLED flexible display screen are improved by a surface coating method, that is, an aluminum oxide coating is prepared on the surface by a magnetron sputtering method.
In the existing magnetron sputtering mode, a sputtering cathode is generally in a rectangular plane structure, but the existing sputtering cathode has poor heat dissipation effect in the sputtering process, so that the temperature of the surface of a target material is high, and the high-power density sputtering of the target material is difficult to realize due to the fact that the temperature of a base material is too fast caused by heat radiation; after the magnetron sputtering cathode is used for a long time, scale is easily formed in a cooling water channel of the magnetron sputtering cathode, and heat dissipation is further influenced; in addition, oxide particles are easily generated on the surface of the target material during the reactive sputtering process, which causes the target material to be ignited, and makes the discharge unstable.
Disclosure of Invention
Based on the above, the invention aims to provide an ultrasonic cleaning high-efficiency heat dissipation type magnetron sputtering cathode which can remove water scales and oxide particles on the surface of a target material, improve the heat dissipation effect and enable discharge to be more stable.
An ultrasonic cleaning high-efficiency heat dissipation type magnetron sputtering cathode comprises a mounting assembly fixed in a vacuum cavity and a shielding case arranged on the mounting assembly, wherein a target material assembly, an ultrasonic cleaning cooling assembly, a magnetic assembly and a magnetic short circuit assembly are sequentially mounted in the shielding case from top to bottom, the magnetic short circuit assembly is fixed on the mounting assembly, and the top of the target material assembly penetrates through the top of the shielding case;
the ultrasonic cleaning and cooling assembly comprises a cooling element and a heat conducting element which are connected with each other, and a plurality of ultrasonic vibrators arranged on the outer side wall of the cooling element, the top of the heat conducting element is attached to the bottom of the target assembly, and the cooling element is arranged on the top of the magnetic short circuit assembly;
the top of the cooling element is concave inwards to form a cooling flow channel for a cooling medium to pass through, and the bottom of the heat conducting element is provided with a plurality of heat conducting columns which protrude outwards and extend into the cooling flow channel.
Compared with the prior art, the heat of the target assembly is quickly led out to the heat conducting column through the heat conducting element, the cooling medium in the cooling flow channel is quickly subjected to heat exchange with the heat in the heat conducting column, and therefore the heat dissipation effect is improved.
Further, the depth of the cooling flow channel is equal to the length of the heat conduction column.
Furthermore, a heat dissipation flow channel is arranged on the heat conduction column and is positioned on the outer wall of the heat conduction column or penetrates through the side wall of the heat conduction column.
Furthermore, the cooling flow channel is a rectangular groove, one end of the bottom of the rectangular groove is provided with a liquid inlet, and the other end of the bottom of the rectangular groove is provided with a liquid outlet;
the heat conduction columns are distributed in an array mode, and the diameter of each heat conduction column is 0.5-3 mm.
Further, the cooling element and the heat conducting element are both made of copper or aluminum.
Further, the target assembly comprises a sputtering target attached to the top surface of the heat conducting element, a first fixing plate for fixing the heat conducting element on the cooling element, and a second fixing plate for fixing the sputtering target on the first fixing plate.
Further, magnetic component is including locating the mount at magnetism short circuit component top inlays and locates the mount middle part just is the first group magnet of linear arrangement, centers on the second group magnet that the mount all around edge set up, and will the fixed limiting plate of first group magnet and second group magnet.
Further, the cross section of each magnet in the first group of magnets is isosceles trapezoid;
the cross section of a single magnet in the second group of magnets is a right trapezoid, and the inclined plane of the right trapezoid is the top surface and is obliquely arranged from outside to inside.
Furthermore, the magnetic short-circuit assembly comprises a magnetic short-circuit fixing plate arranged on the mounting assembly and a magnetic short-circuit element arranged on the magnetic short-circuit fixing plate;
the first set of magnets and the second set of magnets are mounted on the magnetic shorting element;
the periphery of the cooling element is fixed on the top of the magnetic short circuit fixing plate.
Furthermore, the mounting assembly comprises a mounting plate fixed in the vacuum cavity, a base arranged at the bottom of the mounting plate, and an insulating pad arranged on the base;
the insulating pad is connected with the magnetic short circuit fixing plate;
the insulating pad is connected with the base through an insulating screw.
Drawings
FIG. 1 is a schematic structural diagram of an ultrasonic cleaning high-efficiency heat dissipation magnetron sputtering cathode in the invention;
FIG. 2 is an exploded view of the ultrasonic cleaning high efficiency heat dissipation magnetron sputtering cathode of FIG. 1;
FIG. 3 is a spectrum test chart of an alumina coating prepared by the ultrasonic cleaning high-efficiency heat dissipation magnetron sputtering cathode of the invention;
FIG. 4 is a graph showing the relationship between the sputtering power of the sputtering target and the deposition rate of the alumina coating in the process of preparing the alumina coating by using the ultrasonic cleaning high-efficiency heat dissipation type magnetron sputtering cathode.
Description of the main element symbols:
mounting assembly 10 Mounting assembly 10
Base seat 102 Insulating pad 103
Insulating screw 104 Shielding case 11
Target material assembly 12 Sputtering target material 121
First fixing plate 122 Second fixing plate 123
Ultrasonic cleaning and cooling assembly 13 Cooling element 131
Cooling flow passage 1311 Ultrasonic vibrator 1312
Heat conducting element 132 Magnetic assembly 14
Fixing frame 141 First group of magnets 142
Second group of magnets 143 Limiting plate 144
Magnetic short-circuit assembly 15 Magnetic short circuit fixing plate 151
Magnetic short-circuit element 152
The following detailed description will further illustrate the invention in conjunction with the above-described figures.
Detailed Description
To facilitate an understanding of the invention, the invention will now be described more fully hereinafter with reference to the accompanying drawings. Several embodiments of the invention are presented in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It will be understood that when an element is referred to as being "secured to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and the like as used herein are for illustrative purposes only.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
Referring to fig. 1 and fig. 2, an ultrasonic cleaning high-efficiency heat dissipation type magnetron sputtering cathode provided in an embodiment of the present invention includes a mounting assembly 10 fixed in a vacuum chamber, and a shielding case 11 disposed on the mounting assembly 10, a target assembly 12, an ultrasonic cleaning cooling assembly 13, a magnetic assembly 14, and a magnetic short-circuit assembly 15 are sequentially mounted in the shielding case 11 from top to bottom, the magnetic short-circuit assembly 15 is fixed on the mounting assembly 10, and the top of the target assembly 12 penetrates through the top of the shielding case 11;
the ultrasonic cleaning and cooling assembly 13 comprises a cooling element 131, a heat conducting element 132 and a plurality of ultrasonic vibrators 1312 arranged on the outer side wall of the cooling element 131, wherein the top of the heat conducting element 132 is attached to the bottom of the target assembly 12, and the cooling element 131 is arranged on the top of the magnetic short-circuit assembly 15;
the top of the cooling element 131 is recessed to form a cooling channel 1311 for passing a cooling medium, and the bottom of the heat conducting element 132 is provided with a plurality of heat conducting columns (not shown) protruding outward and extending into the cooling channel 1311.
In the present invention, the cooling element 131 and the heat conducting element 132 are both made of copper or aluminum, and the cooling medium is oil or water. The vacuum chamber and the shield 11 are simultaneously grounded (i.e. anodic), and the cathode electrode is connected to the cooling element 131 by copper bolts, which conduct electricity to the target assembly 12 through the heat conducting element 132. In the magnetron sputtering process, the heat conducting element 132 rapidly guides the heat of the target assembly 12 out of the heat conducting column, and the cooling medium in the cooling flow channel 1311 rapidly exchanges heat with the heat in the heat conducting column, so that the heat dissipation effect is improved.
In a preferred embodiment of the present invention, the depth of the cooling channel 1311 is equal to the length of the heat conduction column, so as to increase the contact area between the heat conduction column and the cooling medium, thereby improving the heat dissipation effect.
In another preferred embodiment of the present invention, the heat conducting pillar is provided with a heat dissipating channel, and the heat dissipating channel is located on an outer wall of the heat conducting pillar or penetrates through a sidewall of the heat conducting pillar, so as to further increase a contact area between the heat conducting pillar and a cooling medium, and improve a heat dissipating effect.
Referring to fig. 2, the cooling channel 1311 is a rectangular groove, one end of the bottom of the rectangular groove is provided with a liquid inlet hole, and the other end of the bottom of the rectangular groove is provided with a liquid outlet hole, and the cooling medium enters from the liquid inlet hole and is discharged from the liquid outlet hole after exchanging heat with the heat conducting element 132 and the heat conducting column.
Preferably, in the invention, the plurality of heat conduction columns are distributed in an array, and the diameter of each heat conduction column is 0.5-3 mm.
Referring to fig. 2, the target assembly 12 includes a sputtering target 121 attached to the top surface of the heat conducting element 132, a first fixing plate 122 for fixing the heat conducting element 132 to the cooling element 131, and a second fixing plate 123 for fixing the sputtering target 121 to the first fixing plate 122.
Specifically, the cross section of the sputtering target 121 is T-shaped, and the top of the sputtering target 121 protrudes from the upper surface of the second fixing plate 123.
It should be noted that, the first fixing plate 122 and the second fixing plate 123 adopt sus304, and specifically, the heat of the sputtering target 121 is quickly conducted to the heat conducting element 132 by the adhering arrangement of the heat conducting element 132 and the sputtering target 121.
Referring to fig. 2, the magnetic assembly 14 includes a fixing frame 141 disposed at the top of the magnetic short circuit assembly 15, a first set of magnets 142 embedded in the middle of the fixing frame 141 and arranged linearly, a second set of magnets 143 disposed around the periphery of the fixing frame 141, and a limiting plate 144 for fixing the first set of magnets 142 and the second set of magnets 143.
In the present invention, the first and second groups of magnets 142 and 143 are preferably neodymium iron boron magnets. The fixing frame 141 is made of non-magnetic material (aluminum, etc.), and is mainly used for restraining the repulsive force of the first group of magnets 142 and the second group of magnets 143 in the circumferential direction, and the position limiting plate 144 is used for restraining the vertical positions of the first group of magnets 142 and the second group of magnets 143.
In a preferred embodiment of the present invention, the cross section of each magnet in the first set of magnets 142 is an isosceles trapezoid;
the cross section of each magnet in the second group of magnets 143 is a right trapezoid, and the inclined surface of the right trapezoid is the top surface and is inclined from the outside to the inside.
It should be noted that, compared with the conventional rectangular magnet, the magnet distribution manner in the present embodiment can obtain a stronger target surface transverse magnetic field and an inward-inclined unbalanced magnetic field, so that the utilization rate of the sputtering target 121 is higher.
Preferably, the width of the top surface of the individual magnet in the first set of magnets 142 is 12mm, and the thickness of the individual magnet in the second set of magnets 143 is 11 mm.
Referring to fig. 2, the magnetic short circuit assembly 15 includes a magnetic short circuit fixing plate 151 disposed on the mounting assembly 10, and a magnetic short circuit element 152 disposed on the magnetic short circuit fixing plate 151;
the first set of magnets 142 and the second set of magnets 143 are mounted on the magnetic shorting member 152;
the periphery of the cooling element 131 is fixed on the top of the magnetic short fixing plate 151.
Specifically, the magnetic short circuit fixing plate 151 is made of sus304 stainless steel or aluminum, and the magnetic short circuit element 152 is made of sus420 or soft iron and other magnetic conductive materials.
Referring to fig. 2, the mounting assembly 10 includes a mounting plate 101 fixed in a vacuum chamber, a base 102 disposed at the bottom of the mounting plate 101, and an insulating pad 103 disposed on the base 102;
the insulating pad 103 is connected with the magnetic short circuit fixing plate 151;
the insulating pad 103 is connected to the base 102 by an insulating screw 104.
It should be noted that, in order to reduce the weight, the mounting plate 101 and the base 102 are made of aluminum plates. The insulating pad 103 and the insulating screw 104 are made of polytetrafluoroethylene materials.
Specifically, the preparation of the aluminum oxide coating by using the ultrasonic cleaning high-efficiency heat dissipation type magnetron sputtering cathode of the invention is taken as an example for explanation, that is, the sputtering target 121 is an aluminum target.
Referring to fig. 3, as the sputtering power density is gradually increased, the ionization rates of metal aluminum atoms and oxygen atoms (Al II and O II in the mark frame are Al ions and O ions) are gradually increased, and the increase of the ionization rates helps to increase the density of the alumina coating, and simultaneously, the transmittance and the breakdown resistance are increased, thereby enhancing the performance of the alumina coating.
Referring to FIG. 4, the deposition rate of alumina is increased with the increasing sputtering power density, which is generally 5W/cm when preparing alumina coating with the conventional sputtering cathode2The deposition rate is only 5nm/min, and the comparison shows that the sputtering cathode can effectively improve the sputtering efficiency and provide possibility for efficiently producing the aluminum oxide coating.
In summary, in the present invention, the heat of the target assembly 12 is quickly conducted out to the heat-conducting column through the heat-conducting element 143, and the cooling medium in the cooling channel 1311 quickly exchanges heat with the heat in the heat-conducting column, so as to improve the heat dissipation effect. The scale generated in the cooling flow channel 1311 can be automatically cleaned through the ultrasonic vibrator 1312, so that the heat dissipation efficiency and the service life are improved, oxide particles on the surface of the target are cleaned, discharge ignition is reduced, and the sputtering stability is improved. In addition, by the magnetic field distribution mode in the present invention, a stronger target surface transverse magnetic field and an inward-inclined unbalanced magnetic field can be obtained, so that the utilization rate of the sputtering target 121 is higher.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the present invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.

Claims (10)

1. The utility model provides a clean high-efficient heat dissipation type magnetron sputtering negative pole of supersound, is including being fixed in the installation component in the vacuum cavity, and locates shield cover on the installation component, its characterized in that: a target material assembly, an ultrasonic cleaning and cooling assembly, a magnetic assembly and a magnetic short circuit assembly are sequentially arranged in the shielding case from top to bottom, the magnetic short circuit assembly is fixed on the mounting assembly, and the top of the target material assembly penetrates through the top of the shielding case;
the ultrasonic cleaning and cooling assembly comprises a cooling element and a heat conducting element which are connected with each other, and a plurality of ultrasonic vibrators arranged on the outer side wall of the cooling element, the top of the heat conducting element is attached to the bottom of the target assembly, and the cooling element is arranged on the top of the magnetic short circuit assembly;
the top of the cooling element is concave inwards to form a cooling flow channel for a cooling medium to pass through, and the bottom of the heat conducting element is provided with a plurality of heat conducting columns which protrude outwards and extend into the cooling flow channel.
2. The ultrasonically cleaned high efficiency heat dissipating magnetron sputtering cathode as claimed in claim 1, wherein the depth of the cooling channel is equal to the length of the heat conducting pillar.
3. The ultrasonically cleaned and efficiently heat-dissipating magnetron sputtering cathode according to claim 1, wherein the heat-conducting pillar is provided with a heat-dissipating flow channel, and the heat-dissipating flow channel is located on an outer wall of the heat-conducting pillar or penetrates through a side wall of the heat-conducting pillar.
4. The ultrasonic-cleaning high-efficiency heat-dissipation magnetron sputtering cathode as claimed in claim 1, wherein the cooling flow channel is a rectangular groove, one end of the bottom of the rectangular groove is provided with a liquid inlet, and the other end of the bottom of the rectangular groove is provided with a liquid outlet;
the heat conduction columns are distributed in an array mode, and the diameter of each heat conduction column is 0.5-3 mm.
5. The ultrasonically cleaned high efficiency heat dissipating magnetron sputtering cathode of claim 1 wherein the cooling element and the thermally conductive element are both made of copper or aluminum.
6. The ultrasonically cleaned high efficiency heat dissipating magnetron sputtering cathode of claim 1, wherein the target assembly comprises a sputtering target attached to a top surface of the heat conducting element, a first fixing plate for fixing the heat conducting element to the cooling element, and a second fixing plate for fixing the sputtering target to the first fixing plate.
7. The ultrasonic cleaning high-efficiency heat dissipation magnetron sputtering cathode according to claim 1, wherein the magnetic assembly comprises a fixing frame arranged at the top of the magnetic short circuit assembly, a first group of magnets which are embedded in the middle of the fixing frame and arranged linearly, a second group of magnets which are arranged around the periphery of the fixing frame, and a limiting plate which fixes the first group of magnets and the second group of magnets.
8. The ultrasonically cleaned high efficiency heat dissipating magnetron sputtering cathode according to claim 7, wherein the cross section of a single magnet in the first set of magnets is isosceles trapezoid;
the cross section of a single magnet in the second group of magnets is a right trapezoid, and the inclined plane of the right trapezoid is the top surface and is obliquely arranged from outside to inside.
9. The ultrasonically cleaned high-efficiency heat-dissipating magnetron sputtering cathode according to claim 7, wherein the magnetic short-circuit assembly comprises a magnetic short-circuit fixing plate arranged on the mounting assembly and a magnetic short-circuit element arranged on the magnetic short-circuit fixing plate;
the first set of magnets and the second set of magnets are mounted on the magnetic shorting element;
the periphery of the cooling element is fixed on the top of the magnetic short circuit fixing plate.
10. The ultrasonically cleaned high-efficiency heat-dissipating magnetron sputtering cathode according to claim 9, wherein the mounting assembly comprises a mounting plate fixed in a vacuum chamber, a base arranged at the bottom of the mounting plate, and an insulating pad arranged on the base;
the insulating pad is connected with the magnetic short circuit fixing plate;
the insulating pad is connected with the base through an insulating screw.
CN202110756278.1A 2021-07-05 2021-07-05 Ultrasonic cleaning high-efficiency heat dissipation type magnetron sputtering cathode Active CN113463052B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110756278.1A CN113463052B (en) 2021-07-05 2021-07-05 Ultrasonic cleaning high-efficiency heat dissipation type magnetron sputtering cathode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110756278.1A CN113463052B (en) 2021-07-05 2021-07-05 Ultrasonic cleaning high-efficiency heat dissipation type magnetron sputtering cathode

Publications (2)

Publication Number Publication Date
CN113463052A CN113463052A (en) 2021-10-01
CN113463052B true CN113463052B (en) 2022-06-21

Family

ID=77877962

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110756278.1A Active CN113463052B (en) 2021-07-05 2021-07-05 Ultrasonic cleaning high-efficiency heat dissipation type magnetron sputtering cathode

Country Status (1)

Country Link
CN (1) CN113463052B (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101250687A (en) * 2008-03-26 2008-08-27 合肥工业大学 Rectangle plane magnetron sputtering cathode
CN203768448U (en) * 2013-12-24 2014-08-13 上海子创镀膜技术有限公司 Novel planar cathode for vacuum magnetron sputtering
CN108431926A (en) * 2015-11-12 2018-08-21 霍尼韦尔国际公司 Sputtering target backer board assembly with cooling structure
CN110344009A (en) * 2018-04-04 2019-10-18 长鑫存储技术有限公司 Magnetic control sputtering system and magnetron sputtering apparatus with magnetization chilled water unit

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8123107B2 (en) * 2004-05-25 2012-02-28 Praxair S.T. Technology, Inc. Method for forming sputter target assemblies
CN204474752U (en) * 2015-03-17 2015-07-15 海南汉能薄膜太阳能有限公司 A kind of magnetron sputtering equipment and cathode targets assembly thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101250687A (en) * 2008-03-26 2008-08-27 合肥工业大学 Rectangle plane magnetron sputtering cathode
CN203768448U (en) * 2013-12-24 2014-08-13 上海子创镀膜技术有限公司 Novel planar cathode for vacuum magnetron sputtering
CN108431926A (en) * 2015-11-12 2018-08-21 霍尼韦尔国际公司 Sputtering target backer board assembly with cooling structure
CN110344009A (en) * 2018-04-04 2019-10-18 长鑫存储技术有限公司 Magnetic control sputtering system and magnetron sputtering apparatus with magnetization chilled water unit

Also Published As

Publication number Publication date
CN113463052A (en) 2021-10-01

Similar Documents

Publication Publication Date Title
KR101321085B1 (en) Controllable target cooling
KR101826843B1 (en) Inductive plasma source with metallic shower head using b-field concentrator
CN101250687A (en) Rectangle plane magnetron sputtering cathode
CN101775588B (en) Rectangular target with high target utilization ratio
CN113463052B (en) Ultrasonic cleaning high-efficiency heat dissipation type magnetron sputtering cathode
CN1245534C (en) Non-magentic shielding type ferromagnetic target as sputter cathode
CN116501149A (en) Server chip immersed liquid cooling heat dissipation device integrated with electrohydrodynamic pump
CN204281851U (en) A kind of medium frequency magnetron sputtering plated film negative electrode
CN106399958B (en) A kind of rectangle magnetic controlled sputtering target for metal coating
CN105600754A (en) Water body ground electrode ozone generator and ozone system
CN208791742U (en) A kind of ion-clearing electrodes applied to vertical silicon wafer magnetron sputtering coater
CN210868596U (en) Heat dissipation device for power cabinet
CN209119077U (en) A kind of ion wind radiator
CN112738967A (en) Large-area dielectric barrier plasma discharge electrode plate combination
CN113659234A (en) Air-cooled high-rate charging and discharging battery pack
CN201162042Y (en) Rectangle plane magnetron sputtering cathode
CN218756003U (en) Magnetron sputtering coating machine capable of rapidly cooling
CN104894523A (en) High-power magnetron sputtering target
CN111867337A (en) Heat sink device
CN213280447U (en) Heat dissipation assembly for electrical control cabinet
CN104532199A (en) Cathode for medium-frequency magnetron sputtering coating
CN101764056A (en) Novel plasma shower set
CN220224308U (en) Water return device and magnetron sputtering equipment
CN216378366U (en) Anode water cooling mechanism for connecting planar cathode
TW201910542A (en) Manufacturing method of electromagnet assembly

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant