CN101242691A - Light emitting device - Google Patents
Light emitting device Download PDFInfo
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- CN101242691A CN101242691A CNA2008100058083A CN200810005808A CN101242691A CN 101242691 A CN101242691 A CN 101242691A CN A2008100058083 A CNA2008100058083 A CN A2008100058083A CN 200810005808 A CN200810005808 A CN 200810005808A CN 101242691 A CN101242691 A CN 101242691A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/824—Cathodes combined with auxiliary electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
A light emitting device includes a substrate, a light emitting elements that have a first electrode, a second electrode and a light emitting layer, an element layer, an auxiliary electrode that is electrically connected to the second electrode, and an insulating layer. The second electrode is commonly provided for the light emitting elements. The insulating layer has a portion arranged in a lower layer under the second electrode and the auxiliary electrode. The auxiliary electrode is formed partly in a peripheral region of the light emitting device. In the peripheral region, an end portion of the second electrode is located on an inner side along a plane of the substrate than an end portion of the auxiliary electrode and located on an outer side than an end portion of the insulating layer.
Description
Technical field
The present invention relates to a kind of light-emitting device that has utilized light-emitting components such as organic EL (Electroluminescence) element.
Background technology
Known have a kind of effective coverage on substrate to be arranged with a plurality of light-emitting components, and dispose the light-emitting device of various wirings etc. in the neighboring area that surrounds the effective coverage.Each light-emitting component has the luminescent layer that the luminescent materials such as organic EL Material by clamping between first electrode and second electrode form.In most cases, this second electrode is the public electrode of the public setting of a plurality of relatively light-emitting components, and is arranged on whole above-mentioned effective coverage.But the resistance that has because of electrode self can cause producing the voltage reduction in the face of electrode, and the feasible current potential of supplying with to generating element causes the brightness of light-emitting component to have deviation because of the position because of deviation takes place the position on the substrate.Therefore, be provided with and the auxiliary electrode that forms and be electrically connected by the low material of resistance ratio public electrode in the past, reduced common electrode resistance (for example patent documentation 1) with public electrode.
[patent documentation 1] spy opens the 2002-352963 communique
Yet auxiliary electrode is for example formed by light-proofness parts such as aluminium mostly.Therefore, wish mode, auxiliary electrode is formed zone by the gap of light-emitting component, preferably utilize high-precision position registration mechanism to form according to the emergent light that does not block self-emission device.Relative with it, public electrode can be formed by the material of photopermeability, and similarly is formed on the zone that covers effective regional integration.Thus, compare the error of tolerable position alignment with auxiliary electrode.Therefore, than auxiliary electrode, the position alignment error of public electrode becomes problem.Thereby, wish on substrate, fully to guarantee the width (so-called " margo frontalis zone (window frame region) ") of neighboring area that so that can absorb the error of public electrode, but this has hindered the miniaturization of device.
In addition, be used for the luminous circuit elements of controlling such as transistor, be configured in the lower floor of public electrode and auxiliary electrode light-emitting component.Therefore, between public electrode and auxiliary electrode, insulating barrier is set, makes the insulation of public electrode and auxiliary electrode and circuit element.Yet, when insulating barrier contains ladder, might in electrode, produce broken string or be full of cracks in the top section that overlaps with this ladder.Increase owing to produced the resistance value of the local electrode of broken string or be full of cracks, so it is remarkable that the brightness disproportionation of light-emitting component becomes.
Summary of the invention
The present invention proposes in view of above-mentioned actual conditions, and its purpose is, a kind of margo frontalis zone that not only can dwindle light-emitting device is provided, and can suppress the light-emitting device of the brightness disproportionation of light-emitting component.
In order to solve above-mentioned problem, first light-emitting device of the present invention has effective coverage of having arranged a plurality of light-emitting components and the neighboring area that surrounds this effective coverage on substrate, described each light-emitting component has and is positioned at first electrode and second electrode luminescent layer between the two, described second electrode needle is to the public setting of described a plurality of light-emitting components, this light-emitting device has and has disposed the element layer that is used for the luminous circuit element of controlling of described light-emitting component, and described light-emitting device has: the auxiliary electrode that is electrically connected with described second electrode; And insulating barrier, it has the upper strata that is configured in described element layer, and is configured in the part that described relatively second electrode and described auxiliary electrode more rely on the position of lower floor, is used to make the insulation of described second electrode and described auxiliary electrode and described circuit element; Described second electrode covers described effective coverage, and give prominence to and be formed uniformly to described neighboring area, described auxiliary electrode passes through the gap of described a plurality of light-emitting components in described effective coverage, be formed in the part of described neighboring area, in described neighboring area, the end of described second electrode is positioned at described relatively auxiliary electrode in the face of described substrate end more relies on inboard position, and the end that is positioned at described relatively insulating barrier more relies on the position in the outside.
In light-emitting device of the present invention, the end that the end of auxiliary electrode is configured in relative public electrode more relies on the position in the outside.And auxiliary electrode forms the gap area by light-emitting component in the effective coverage.Therefore, preferably use high-precision position registration mechanism to form auxiliary electrode.Relative with it, because the public electrode unification is formed on the zone that covers effective regional integration, so when forming public electrode, position alignment precision does not require the degree as auxiliary electrode.That is, form with the error more minimum under the most situation of auxiliary electrode than common electrical.Therefore, according to the present invention, the formation that more relies on the position in the outside with end that the end that makes public electrode is positioned at relative auxiliary electrode is compared, and can dwindle the margo frontalis zone according to the error of auxiliary electrode, thus miniaturization that can implement device.And, can constitute the auxiliary electrode formation lower than second electrode resistance.Especially preferred auxiliary electrode is formed by the low material of resistance ratio second electrode.
And in first light-emitting device of the present invention, the end that the end of public electrode is configured in relative insulating barrier more relies on the position in the outside.Though the end superposed part with insulating barrier in the auxiliary electrode produces broken string or be full of cracks because of ladder easily, but because the end of public electrode extends to form the position that the position of relative generation be full of cracks more relies on the outside, so, even if in auxiliary electrode, produced under the situation of broken string or be full of cracks, also can suppress the increase of resistance value.The brightness disproportionation that therefore, can suppress light-emitting component.And insulating barrier is formed by the material of poisture-penetrabilitys such as acrylic acid mostly.Under this situation, moisture can be invaded from the outside via insulating barrier, might cause the deterioration of luminescent layer.Yet in the present invention, the end that is configured in relative insulating barrier by the end that makes public electrode more relies on the position in the outside, can prevent that moisture from entering into insulating barrier, therefore, can suppress the deterioration of light-emitting component.Thereby, can suppress light-emitting component and reduce because of the brightness that deterioration causes.
In the optimal way of the present invention, in described neighboring area, be equipped with the second electrode power line that is used for supplying with current potential to described second electrode, described auxiliary electrode have not with the described second electrode superposed part in the part of joining with power line with described second electrode.Therefore, have only auxiliary electrode to overlap with power line, can supply with current potential to second electrode via this superposed part with second electrode.On the other hand, because the influence of the ladder of insulating barrier can produce broken string or be full of cracks in auxiliary electrode, might make resistance value increase.Under this situation, the voltage reduction of supplying with to public electrode can become remarkable.Yet, in the present invention, because the end of public electrode is configured in the position that the end of relative insulating barrier more relies on the outside, so, more side-prominent with power line than the place that broken string or be full of cracks take place easily in the auxiliary electrode ladder superposed part of the end of insulating barrier (that is, with) to second electrode.Therefore, even, also can supply with from the current potential of second electrode to other parts of public electrode and auxiliary electrode with power line because of the ladder of the end of insulating barrier has produced in auxiliary electrode under the situation of broken string or be full of cracks.Thereby, can suppress the brightness disproportionation of light-emitting component.
In aforesaid way, preferred described second electrode is configured in the position that relies on lower floor than described auxiliary electrode.According to this mode, because second electrode can not be subjected to the influence that the ladder because of auxiliary electrode causes, so, can suppress the possibility that broken string or be full of cracks take place second electrode.
And each of preferred described second electrode and described auxiliary electrode has the part of joining with power line with described second electrode.According to this mode, because except auxiliary electrode, second electrode also has the part of joining with power line with second electrode, so, can reduce from second electrode with the resistance of power line, can suppress to cause the brightness disproportionation of light-emitting component because of the reduction of voltage to second electrode.
In other optimal ways of the present invention, be equipped with the second electrode power line that is used for supplying with to described second electrode current potential in described neighboring area, described auxiliary electrode has part top and that described second electrode joins and following and described second electrode joins with power line.Because except auxiliary electrode, second electrode also has and second electrode power line superposed part, so, can reduce from second electrode with the resistance of power line to second electrode, can suppress to cause the brightness disproportionation of light-emitting component because of the reduction of voltage.
And then, second light-emitting device of the present invention has effective coverage of having arranged a plurality of light-emitting components and the neighboring area that surrounds this effective coverage on substrate, this light-emitting device possesses: with each a plurality of first electrode that are provided with accordingly of described a plurality of light-emitting components; Second electrode at the public setting of described a plurality of light-emitting components; Luminescent layer between described a plurality of first electrodes and described second electrode; The auxiliary electrode that is electrically connected with described second electrode; Dispose the element layer that is used for the luminous circuit element of controlling of described light-emitting component; And be used to make the insulating barrier that insulate between described second electrode or described auxiliary electrode and the described element layer; Described insulating barrier is set at the first area of at least a portion that comprises described effective coverage integral body and described neighboring area, described second electrode overlaps with described first area in the integral body of described effective coverage, in described neighboring area, be arranged on described relatively first area at the outstanding second area of first direction, described auxiliary electrode is provided in the gap of passing through described a plurality of light-emitting components in the described effective coverage, and, be provided in the outstanding side in the described relatively first area of described second area in the described neighboring area, inboard by described first area, with be the outside of described first area and be the area inside of described second area, up to the outside of described second area.
Among the present invention, a side is given prominence in the first area that is relatively set with insulating barrier at the second area that is provided with public electrode, and auxiliary electrode is configured to extend to the outside of second area.And auxiliary electrode forms in the effective coverage gap area by light-emitting component.Therefore, owing to used high-precision position registration mechanism in the formation with respect to auxiliary electrode, public electrode similarly forms in the zone that covers effective regional integration, so position alignment precision does not need the degree as auxiliary electrode when forming public electrode.Thereby, make that the error ratio common electrical of auxiliary electrode is minimum, according to the present invention, the structure that more relies on the position in the outside with end that end with public electrode is configured in relative auxiliary electrode is compared, can dwindle the margo frontalis zone according to the error of auxiliary electrode, miniaturization that can implement device.
And, though the end superposed part with insulating barrier in the auxiliary electrode produces broken string or be full of cracks because of ladder easily, but in the light-emitting device of the present invention, than the outstanding side in first area, the end of public electrode extends to form than the generation broken string of auxiliary electrode or the position of be full of cracks and relies on the outside at second area.Therefore, even if in auxiliary electrode, produced under the situation of broken string or be full of cracks, also can suppress the increase of resistance value.The brightness disproportionation that therefore, can suppress light-emitting component.And insulating barrier is formed by the material of poisture-penetrabilitys such as acrylic acid mostly.Under this situation, moisture can be invaded from the outside via insulating barrier, might cause the deterioration of luminescent layer.Yet in the present invention, the end that is configured in relative insulating barrier by the end that makes public electrode more relies on the position in the outside, can prevent that moisture from entering into insulating barrier, therefore, can suppress the deterioration of light-emitting component.Thereby, can suppress light-emitting component and reduce because of the brightness that deterioration causes.
In the optimal way of above-mentioned second light-emitting component, described a plurality of light-emitting component is arranged in rectangular, described auxiliary electrode has: according to the gap by described a plurality of light-emitting components and from the inboard of described effective coverage up to the mode in the outside, be arranged to a plurality of absolute electrodes of striated along described first direction.Preferred described auxiliary electrode also has in described neighboring area the interconnective connection electrode of described a plurality of absolute electrodes.Under this situation, the mode that can overlap with described connection electrode according to the end of the described first direction of described insulating barrier disposes described connection electrode.
In other optimal ways of above-mentioned second light-emitting device, described a plurality of light-emitting component is arranged in rectangular, described auxiliary electrode is the gap by described a plurality of light-emitting components, and according to from the inboard of described effective coverage to the mode in the outside of described second area, be arranged to a plurality of absolute electrodes of striated along described first direction.
And, in any one mode of above-mentioned second light-emitting device, second electrode that is preferred for supplying with current potential to described second electrode is arranged in the described neighboring area according to the mode of intersecting with described first direction with power line, and described second electrode usefulness power line is electrically connected with described auxiliary electrode.Under this situation, described second electrode also can be arranged on the outside of described first area with power line.
And the present invention also provides a kind of electronic equipment with first or second light-emitting device of above-mentioned any one mode.According to this electronic equipment, can realize above-mentioned any one effect.
Description of drawings
Fig. 1 (A) is the approximate vertical view of a part of the formation of the related light-emitting device of expression first execution mode of the present invention, (B) is the vertical view that is illustrated in after (A) state and then has formed the state of auxiliary electrode and pixel electrode.
Fig. 2 is the circuit diagram of detailed structure of the image element circuit of this device of expression.
Fig. 3 is the partial enlarged drawing of Fig. 1 (B).
Fig. 4 is the part sectioned view of this device.
Fig. 5 is the local simple profile of this device.
Fig. 6 is the figure that has produced the appearance of be full of cracks in the auxiliary electrode of this device of expression.
Fig. 7 is the part sectioned view of the related light-emitting device of the variation of first execution mode.
Fig. 8 is the local simple profile of the related light-emitting device of second execution mode of the present invention.
Fig. 9 is the part sectioned view of the related light-emitting device of the 3rd execution mode of the present invention.
Figure 10 is the local simple profile of this device.
Figure 11 is the local simple profile of the related light-emitting device of the 4th execution mode of the present invention.
Figure 12 is the local simple profile of the related light-emitting device of variation of the present invention.
Figure 13 is the local simple profile of the related light-emitting device of variation of the present invention.
Figure 14 is layout (lay-out) summary of the related light-emitting device of variation of the present invention.
Figure 15 is the layout summary of the related light-emitting device of variation of the present invention.
Figure 16 is the stereogram of formation that the portable personal computer of light-emitting device has been adopted in expression.
Figure 17 is the stereogram of formation that the mobile phone of light-emitting device has been used in expression.
Figure 18 is the stereogram of formation that the portable information terminal of light-emitting device has been used in expression.
Among the figure: 1; 1A; 1B; 1E; 1F; 2A; 2B; 3A; 3B; 4A; the 4B-light-emitting device, 10-substrate, 70-light-emitting component; 34-circuit protection film, 35-second interlayer dielectric (dielectric film), 37-next door; the 37a-peristome; 65-moisture resistance inserts, 72-public electrode (second electrode), 74-light emitting functional layer; 76-pixel electrode (first electrode); the 80-diaphragm seal, 90-seal (seal), 100A; 100B-scan line drive circuit (peripheral circuit); the 110-counter substrate; the 111-scan line, 112-data wire, 113-power supply supply line; the 120-pre-charge circuit; the 140-second electrode power line, 150-auxiliary electrode, 150c; the 150e-absolute electrode; the 150d-connection electrode; 200; 200A; the 200B-data line drive circuit, A-effective coverage, B-neighboring area; C; the F-zone; E1～E5-end, G-signal input terminal, P-unit circuit.
Embodiment
Below, with reference to accompanying drawing embodiments of the present invention are described.Wherein, the size with reality is suitably different in the accompanying drawings to make the dimension scale of each one.
＜A-1: first execution mode 〉
Fig. 1 (A) is the approximate vertical view of a part of the formation of the related light-emitting device 1 of expression first execution mode of the present invention, and Fig. 1 (B) is the vertical view that has further formed the state of auxiliary electrode 150 and pixel electrode 76 after the state of Fig. 1 (A).Shown in Fig. 1 (A), this light-emitting device 1 possesses substrate 10 and flexible base, board 20.End at substrate 10 is formed with splicing ear, and the splicing ear that forms on this splicing ear and the flexible base, board 20 is called as ACF (anisotropic conductive film: the film like binding agent of conducting particles anisotropic conductive film) and crimping is fixed by containing.And flexible base, board 20 is provided with data line drive circuit 200, and it supplies with various supply voltages via flexible base, board 200 to each substrate 20.
In the A of effective coverage, be formed with multi-strip scanning line 111 and many data wires 112, near their each crossing, be provided with a plurality of unit circuits (image element circuit) P.Unit circuit P comprises OLED (organic light emitting diode) element, receives power supply from electric current supplying wire 113.Many electric current supplying wire 113 is connected with power line 130 with first electrode.
Fig. 2 is the circuit diagram of detailed construction of the unit circuit P of expression light-emitting device 1.Constituent parts circuit P comprises: n channel transistor 68, p channel transistor 60, capacity cell 69 and light-emitting component (OLED element) 70.The source electrode of P channel transistor 60 is connected with electric current supplying wire 113, and in addition, its drain electrode is connected with the anode of light-emitting component 70.And, between the source of transistor 60 electrode and gate electrode, be provided with capacity cell 69.The gate electrode of n channel transistor 68 is connected with scan line 111, and its source electrode is connected with data wire 112, and its drain electrode is connected with the gate electrode of transistor 60.
For unit circuit P, if scan line drive circuit 100A and 100B have selected and this unit circuit P corresponding scanning line 111, then transistor 68 conductings make the data-signal of supplying with via data wire 112 remain on inner capacity cell 69.Then, transistor 60 is supplied with the electric current corresponding with the level of data-signal to light-emitting component 70.Thus, light-emitting component 70 will be luminous with the brightness corresponding with the level of data-signal.
In addition, shown in Fig. 1 (A), be formed with second electrode power line 140 of コ word shape in the peripheral part side (that is, between the periphery and neighboring area B of substrate or substrate 10) of neighboring area B.As described later, second electrode is negative electrode (second electrode) supply line voltage (Vss in this example: wiring earth level) that are used for to light-emitting component with power line 140.In addition, can replace second electrode is configured to コ word shape (that is, along three limits of substrate 20) with power line 140, and make it become the state that is provided with along opposed two limits of substrate 10.That is, in illustrated embodiment, can second electrode power line 140 be set along each scan drive circuit 100A and 100B.
Light-emitting component 70 has the light emitting functional layer (comprising luminescent layer) 74 (with reference to Fig. 4) that is clamped between pixel electrode 76 (anode) and the public electrode 72 (negative electrode).Public electrode 72 is formed on the zone (second area) of the part of effective coverage A integral body and neighboring area B shown in Fig. 1 (B).And, connect the public electrode 72 and second electrode and form in the B of neighboring area with the auxiliary electrode 150 of power line 140 and cover peripheral circuit.Auxiliary electrode 150 comprises: be arranged on the 150a of first of the auxiliary electrode among the A of effective coverage and be arranged on the second portion 150b of the auxiliary electrode among the B of neighboring area.According to the 150a of first and pixel electrode 76 discontiguous mode in the A of effective coverage of auxiliary electrode 150, the 150a of first of auxiliary electrode 150 is formed lattice-shaped.That is, in the gap of light-emitting component 70, dispose the 150a of first of auxiliary electrode 150.The auxiliary electrode that is mentioned in this specification is meant: coincide with public electrode 72 and electrical connection with it, make the conductor of the resistance reduction of public electrode 72.For clearly, in Fig. 3, amplify a part of having represented Fig. 1 (B).
The light-emitting device 1 of present embodiment constitutes with the luminous form of napex, penetrates by public electrode 72 backs from the light of light emitting functional layer 74.Public electrode 72 is formed by transparent material.Therefore, common electrode 72 and on business not to neighboring area B shading.On the other hand, because above-mentioned auxiliary electrode 150 has adopted the metal with conductivity and light-proofness, so, can come shading by auxiliary electrode 150.Thus, can suppress light incides peripheral circuit and produces photoelectric current.In addition, auxiliary electrode 150 can form by same operation with the pixel electrode 76 of effective coverage A.Therefore, do not need to take for neighboring area B being added the special operation of light-proofness.
Fig. 4 represents the part sectioned view of light-emitting device 1.Among this figure, in the A of effective coverage, be formed with light-emitting component 70, on the other hand, in the B of neighboring area, be formed with scan line drive circuit 100A as peripheral circuit.Among this figure, the exit facet that penetrates light will be made as above the light-emitting device 1.As shown in the drawing, on substrate 10, be formed with substrate protective layer 31, be formed with transistor 40,50 and 60 thereon.Transistor 40 is the n channel-type, and transistor 50 and 60 is the p channel-type.Transistor the 40, the 50th, the part of scan line drive circuit 100A, transistor 60 is parts of unit circuit P with light-emitting component 70.
In transistor 50 and 60,, form drain region 50a and 60a and source region 50c and 60c via gate electrode 52 and the 62 pairs of silicon layers 501 and 601 doped with II I family elements.Here, the zone that is not doped III family element becomes channel region 50b and 60b.Wherein, can in the gate electrode 42,52 and 62 that forms transistor 40,50 and 60, form scan line 111.
First interlayer insulating film 33 is formed on the upper strata of gate insulation layer 32 according to the mode of covering grid electrode 42,52 and 62.The material of first interlayer insulating film 33 can adopt silica etc.And source electrode 41,51 and 63, leakage/source electrode 43, drain electrode 61 are connected with silicon layer 401,501 and 601 via the contact hole that spreads all over gate insulation layer 32 and 33 perforates of first interlayer insulating film.And, can form second electrode power line 140, data wire 112 and electric current supplying wire 113 by same operation with these electrodes.These electrodes and second electrode are formed by the materials such as aluminium with conductivity with power line 140 etc.
Circuit protection film 34 is arranged on the upper strata of first interlayer insulating film 33 with the mode of power line 140 according to the source of covering electrode 41,51 and 63, leakage/source electrode 43, drain electrode 61, second electrode.Circuit protection film 34 is for example formed by the low material of gas permeation rates such as silicon nitride or silicon oxynitride.In addition, these silicon nitrides or silicon oxynitride can make non-crystalline material, also can contain hydrogen.Can prevent to break away from hydrogen by circuit protection film 34 from transistor 40,50 and 60.In addition, can also be below source electrode or drain electrode formation circuit protection film 34.
Second interlayer dielectric 35 is arranged on the upper strata of circuit protection film 34.Here, second interlayer dielectric 35 is set at source electrode 41,51,63, leakage/source electrode 43, drain electrode 61, second electrode with between power line 140 and pixel electrode described later 76, auxiliary electrode 150 or the public electrode 72, plays the effect that these parts are insulated.At this moment, set thickness according to the mode that does not produce delay to scan line and holding wire signal supplied.In addition, preferred second interlayer dielectric 35 makes concavo-convex little below opposed of the top concavo-convex ratio opposite with circuit protection film 34 and circuit protection film 34.That is,, can adopt second interlayer dielectric 35 in order to make the concavo-convex planarization that produces because of transistor 40,50,60 scan lines 111, data wire 112, electric current supplying wire 113 etc.This second interlayer dielectric 35 is set at the zone (first area) of at least a portion that comprises effective coverage A integral body and neighboring area B.Above-mentioned second area (being formed with the zone of public electrode 72) is to overlap with the first area in the A integral body of effective coverage, the relative outstanding zone of lateral direction in 10 of substrates more, first area in the B of neighboring area.Specifically, in the present embodiment, dispose second electrode with the right and left of power line 140 and at least three avris of top in the four edges of substrate 10, the relative first area of the second area more lateral direction in 10 of substrates is outstanding.
The material of second interlayer dielectric 35 for example can adopt the high-molecular organic material of acrylic acid series, polyimides system.Under this situation, can in organic resin, mix the photosensitive material that composition is used, similarly carry out composition by exposure with the photoelectricity resist.Perhaps, (chemical vapor deposition:CVD) forms second interlayer dielectric 35 by inorganic material such as silica, silicon oxynitrides by CVD (Chemical Vapor Deposition) method, and makes planarization above it based on etching etc.Form under the situation of film by CVD (Chemical Vapor Deposition) method in inorganic material, this thickness is below the 1 μ m, and it is roughly the same, therefore, owing to be subjected to the concavo-convex influence of lower floor easily, form organic resin by coating with respect to top, so, its thickness can be increased to about 2～3 μ m, and owing to be not vulnerable to the concavo-convex influence of lower floor above it, so inorganic material is suitable as the material of second interlayer dielectric 35.If especially allow to a certain degree concavo-convex, then second interlayer dielectric 35 can adopt inorganic material such as silica, silicon oxynitride.
On second interlayer dielectric 35, in the A of effective coverage, form in the 150a of first of pixel electrode 76 (first electrode) and auxiliary electrode, in the B of neighboring area, form the second portion 150b of auxiliary electrode.Be that pixel electrode 76 and auxiliary electrode 150 utilize same material to form simultaneously in one deck.The pixel electrode 76 of present embodiment is the anode of light-emitting component 70, separates forming by each light-emitting component 70, and is connected with the drain electrode 61 of transistor 60 via the contact hole that connects second interlayer dielectric 35 and circuit protection film 34.In addition, for for the material of the pixel electrode 76 of anode, the preferred big material of work content for example preferably adopts nickel, gold, platinum etc. or their alloy.Because these materials have reflectivity, so, will reflect towards public electrode 72 by the light that light emitting functional layer 74 is sent.Under this situation, auxiliary electrode 150 is also formed by these materials.
In addition, pixel electrode 76 can be contain by work content high as ITO (indium tin oxide), IZO (indium zinc oxide) or ZnO
2The ground floor that such oxidation electric conducting material constitutes with photopermeability, conductivity; With by reflective metal, the second layer that for example constitutes by aluminium, and the structure of ground floor is set in the light emitting functional layer side.Under this situation, auxiliary electrode 150 can have ground floor and second layer both sides, also can have any one deck in the two.
Then, form next door 37.Next door 37 has peristome 37a by forming the profile edge that covers each pixel electrode 76.Therefore, the integral body of each of peristome 37a all overlaps with pixel electrode 76, and in the stage before forming light emitting functional layer 74, pixel electrode 76 exposes by peristome 37a.Next door 37 be used to make pixel electrode 76 and the public electrode 72 (second electrode) that forms afterwards between or a plurality of pixel electrode 76 insulate each other.By next door 37 is set, can independently control each pixel electrode 76, can make a plurality of light-emitting components luminous respectively with the brightness of regulation.That is, the 37 pairs of a plurality of light-emitting components in next door are divided.For example, acrylic acid or polyimides etc. are the insulating properties materials in next door 37.Under this situation, can mix photosensitive material, and similarly carry out composition by exposure with photoresist for composition.Form contact hole CH in the next door 37 simultaneously.In the A of effective coverage, the 150a of first of auxiliary electrode 150 is connected with public electrode 72 described later by this contact hole CH.In addition, the layer identical with next door 37 is not set on the second portion 150b of the auxiliary electrode in the B of neighboring area 150.
Then, on pixel electrode 76, form the light emitting functional layer 74 that comprises luminescent layer at least.Luminescent layer can use organic EL material.Organic EL material can be low molecular material, also can be macromolecular material.As other layers that constitute light emitting functional layer 74, also can comprise part or all of hole injection layer, hole transporting layer, electron supplying layer, electron injecting layer, hole blocking layer and electronic barrier layer.
Then, form public electrode 72 (second electrode) according to the mode that spreads all over effective coverage A and neighboring area B covering auxiliary electrode 150 and light emitting functional layer 74.Public electrode 72 is transparent, comes light transmission public electrode 72 mode of upside in figure of self-emission device 70 to penetrate.Owing to the public electrode 72 of present embodiment is brought into play function as the negative electrode of all light-emitting components 70, so public electrode 72 is formed by the low material of work content, so that inject electronics easily.For example, adopt aluminium, calcium, magnesium or lithium etc. or their alloy.In addition, preferably this alloy adopts low material of work content and the material that can make this material settling outization.For example, be preferably magnesium and silver-colored alloy.These metal or alloy are being used under the situation of public electrode 72, as long as reduce thickness in order to obtain light transmission.
And public electrode 72 (second electrode) can be to comprise the ground floor that is made of low material of the low material of above-mentioned work content or work content and the material that makes this material settling outization and by as ITO (indiumtin oxide), IZO (indium zinc oxide) or ZnO
2The second layer that such oxidation electric conducting material constitutes with photopermeability, conductivity, and the structure of ground floor is set in the light emitting functional layer side.ITO, IZO or ZnO
2Such oxidation electric conducting material is fine and close material, and its gas permeation rate is low.If form public electrode 72 by such material; then because public electrode 72 spreads all over effective coverage A and neighboring area B forms; so, can protect the unit circuit P of effective coverage A and the peripheral circuit of neighboring area B not influenced by extraneous gas, can suppress their deterioration.Like this, if public electrode 72 (second electrode) is the structure that comprises the above-mentioned second layer, then owing to compare with the material that constitutes ground floor, its photopermeability, conductivity are outstanding, so, the source impedance of public electrode 72 not only can be significantly reduced, the efficient of getting light can also be improved from light emitting functional layer.And, comprise the ground floor that constitutes by low material of work content and the material that makes this material settling outization and the second layer that constitutes by above-mentioned oxidation electric conducting material by public electrode 72 (second electrode), can prevent the reaction of the ground floor and the second layer, cause the situation of electron injection efficiency deterioration.
In addition, can before forming public electrode 72, form contact hole CH in the next door 37.In the A of effective coverage, the 150a of first of auxiliary electrode is connected with public electrode 72 via this contact hole CH.By in the A of effective coverage, public electrode 72 being connected with the 150a of first (with reference to Fig. 1 (B)) of the auxiliary electrode that forms lattice-shaped, can significantly reduce the source impedance of public electrode 72.And, because the second portion 150b of auxiliary electrode do not cover by next door 37 in the B of neighboring area, so, contact with 72 of the area and the public electrodes of broadness, therefore, can reduce connection resistance.Thereby, can reduce source impedance significantly.
Then, form diaphragm seal 80 according to the mode that covers public electrode 72 and auxiliary electrode 150.Diaphragm seal 80 for example can adopt the low inorganic material of gas permeation rate such as the good silicon oxynitride of transparency height, moisture resistance, silica.Sealing film 80 covers the regional integration of peripheral circuit (scan line drive circuit 100A, 100B and pre-charge circuit 120 with transistor 40,50).Wherein, do not form diaphragm seal 80 at the external end edge of substrate 10, this external end edge place is formed with seal 90 on circuit protection film 34, and its top engages with transparent sealing substrate (counter substrate) 110.Seal 90 for example can be a binding agent, also can engage the liner (spacer) that is used to keep counter substrate 110 by binding agent.
Fig. 5 is the simple profile of the zone C among Fig. 4.That is, be the scan line drive circuit among the relative neighboring area B a part, be the profile of end that transistor 40,50 more relies on the outside.For the purpose of simplifying the description, in Fig. 5 with substrate protective layer 31 shown in Figure 4, gate insulation layer 32, first interlayer insulating film 33, circuit protection film 34 and by the transistor 40,50 of these layers clamping and each electrode of 60, the unified element layer 30 that is expressed as.Upper layer part in this element layer 30 is formed with second electrode power line 140, and as mentioned above, second electrode is brought into play function with the top conduct of power line 140 with the contact area of upper electrode.Except element layer 30 and second electrode usefulness power line 140, second interlayer dielectric 35, auxiliary electrode 150, public electrode 72, diaphragm seal 80, seal 90 and counter substrate 110 have also been represented among Fig. 4.Below, with reference to this figure the relative position relation of each layer is elaborated.
In addition, as mentioned above, the concavo-convex planarization that second interlayer dielectric 35 is used to make transistor AND gate wiring of being configured in lower floor etc. to be produced.And, because the insulating properties high-molecular organic material that second interlayer dielectric 35 by acrylic acid series, polyimides is etc. forms, so, also have the function of circuit elements such as transistor 40,50,60 insulation of configuration in electrodes such as making anode 76, public electrode 72, auxiliary electrode 150 and the element layer 30.That is, as making each electrode bring into play function with the insulating barrier of the circuit element insulation that is used for light-emitting component luminous controlled.
As shown in Figure 5, be positioned at relative second electrode and more rely on inboard position containing end E1 that the upper strata of second electrode with the element layer 30 of power line 140 be formed with second interlayer dielectric, 35, the second interlayer dielectrics 35 with the medial extremity E3 of the contact area of power line 140.On second interlayer dielectric 35 and element layer 30 above in be insulated in the zone and contact area of the end E1 of layer and end E3 clamping, form the second portion 150b (following simply be called " auxiliary electrode 150 ") of auxiliary electrode 150.Thus, auxiliary electrode 150 joins with power line 140 with second electrode and overlaps, and is electrically connected with power line 140 with second electrode.In illustrated example, though the end E4 of auxiliary electrode 150 is consistent with the end in the outside of contact area, also not necessarily need unanimity, as long as forming, auxiliary electrode 150 covers contact area.That is, the end E4 of the auxiliary electrode end that can be positioned at the outside of relative contact area more relies on the position in the outside.
In addition, in this manual, the relative position when " inboard ", " outside " expression is benchmark with the end E5 of substrate 10 in the real estate.Therefore, in the above description, the distance of " end E1 (summary) relies on the inboard than end E2 " expression end E1 and the end E5 of substrate 10 is than end E2 and the distance of holding E5.
On auxiliary electrode 150, be formed with public electrode 72.The end E1 that the end E2 of public electrode 72 is positioned at relative second interlayer dielectric 35 more relies on the position in the outside.On the other hand, the end E4 of the relative auxiliary electrode 150 of end E2 of public electrode 72 more relies on inboard position.And relative second electrode of end E2 more relies on inboard position with the end E3 of the inboard of power line 140.In other words, auxiliary electrode 150 has the part that overlaps with power line 140 with second electrode and be electrically connected (hold E3 and hold between 4) in the part that does not form public electrode 72 (opposite end E2 more rely on the outside).In addition, as mentioned above, auxiliary electrode 150 forms simultaneously with pixel electrode 76, then, after having formed next door 37, light emitting functional layer 74 in order, forms public electrode 72 according to the mode that covers next door 37 and light emitting functional layer 74.
As mentioned above, auxiliary electrode 150 can adopt the metal with conductivity and light-proofness.Therefore, according to the mode that auxiliary electrode 150 in the A of effective coverage and pixel electrode 76 do not overlap, form the 150a of first of auxiliary electrode 150 with lattice-shaped.That is, in the A of effective coverage,, only in the gap of light-emitting component 70, dispose the 150a of first of auxiliary electrode 150 according to the mode of the emergent light that does not interdict self-emission device 70.Because light-emitting component 70 is mutually with small arranged spaced, so expectation utilizes high-precision correcting mechanism to form auxiliary electrode 150.Relative with it, because public electrode 72 forms by transparent material, so, in the A of effective coverage, similarly form this public electrode 72 according to the mode of covering luminous element 70 in the A of effective coverage.Therefore, public electrode 72 can utilize the low correcting mechanism of correcting mechanism precision that adopts than the formation of auxiliary electrode 150 to form.Yet, utilizing the low correcting mechanism of precision to form under the situation of public electrode 72, the position of the end E2 of public electrode 72 might change.
Here, the scope of the site error of the end E2 of public electrode 72 is made as t1, the scope of the site error of the end E4 of auxiliary electrode 150 is made as t2.When auxiliary electrode 150 being adopted the higher correcting mechanism of precision, t1＞t2.In addition, when auxiliary electrode and public electrode 72 both sides are adopted the single correcting mechanism of the needed precision degree of the formation with auxiliary electrode 150, roughly become t1=t2.Therefore, make the error t2 possibility bigger of auxiliary electrode 150 reduce than the error of public electrode 72, even if hypothesis becomes t1＜t2 in the latter case, owing to adopted high-precision correcting mechanism, so the error of t1 can not become problem fully.Therefore, in the present embodiment, the end E2 that constitutes the relative public electrode 72 of end E4 of auxiliary electrode 150 is positioned at the outside.Constitute according to this, the error of considering auxiliary electrode 150 be that maximum position E4max (when the position of end E4 during near the end E5 side of substrate 10) to the distance of holding E5, can determine the width (i.e. " margo frontalis zone ") of neighboring area B in the end E5 of substrate 10 side.Thus, compare when more relying on the position in the outside, can dwindle the margo frontalis zone with allowing end E4 that the end E2 of the public electrode 72 of mistake more is configured in the auxiliary electrode 150 that compares.That is the precision that can reduce the correcting mechanism that the formation of public electrode 72 adopts influence that the width in margo frontalis zone is caused.In addition, preferably more rely on inboard mode at the position E4max of the end E5 of substrate 10 side maximum, the reference position (position when not having error) of decision end E2 and end E4 in the end E5 of substrate 10 side for the error of the maximum relative auxiliary electrode 150 of position E2max according to the error of public electrode 72.
In addition, in above formation, auxiliary electrode 150 forms the end E1 that covers second interlayer dielectric 35.Therefore, in auxiliary electrode 150, produce broken string or be full of cracks because of the ladder of end E1 part sometimes.Fig. 6 is illustrated in the appearance that has produced be full of cracks in the auxiliary electrode 150.As shown in Figure 6, in the end E1 superposed part of the auxiliary electrode 150 and second interlayer dielectric 35, auxiliary electrode 150 has produced be full of cracks I.Resistance value at the local electrode that has produced be full of cracks I can increase, and might produce the brightness disproportionation of light-emitting component 70.Yet in the light-emitting device 1 of present embodiment, as shown in Figure 6, the end E2 of public electrode 72 is positioned at the position that opposite end E1 more relies on the outside.Promptly, use in the zone of power line 140 and auxiliary electrode 150 superposed part (between end E1 and the end E2) because public electrode 72 has at more close second electrode of I that chaps relatively, so, even if under the situation that auxiliary electrode 150 breaks fully because of be full of cracks I, also the current potential of being supplied with power line 140 by second electrode can be offered public electrode 72.And, under the situation that the resistance value of auxiliary electrode 150 increases because of be full of cracks I, because electric current flows through via public electrode 72, so can suppress the reduction of voltage.The brightness disproportionation that therefore, can suppress light-emitting component 70.
And, owing to second interlayer dielectric, 35 materials by poisture-penetrabilitys such as acrylic acid constitute, so moisture can enter via second interlayer dielectric 35, might produce the deterioration of luminescent material.Therefore, in the present embodiment, the end E1 that the end E2 of public electrode 72 is configured in relative second interlayer dielectric 35 more relies on the position in the outside.Thus, can prevent that moisture from entering from end E1, can suppress the deterioration of light-emitting component.Thereby, can suppress to cause that because of the deterioration of the luminescent layer of light emitting functional layer 74 brightness of luminous source electrode 70 reduces.
＜A-2: the variation of first execution mode 〉
In the above-described embodiment, the formation when forming auxiliary electrode 150 and pixel electrode 76 simultaneously is illustrated, but also can be forms auxiliary electrode 150 with the operation that has formed after the next door 37 simultaneously with pixel electrode 76.
Fig. 7 is the part sectioned view of the light-emitting device 1A of this variation.As shown in Figure 7, in light-emitting device 1A, be formed with auxiliary electrode 150 (150a, 150b) according to the mode that covers second interlayer dielectric 35 and next door 37.In the above-described embodiment as shown in Figure 4, auxiliary electrode 150 has the part that forms on second interlayer dielectric 35 and next door 37.To this, in part, form auxiliary electrode 150 on the next door 37 in this variation with next door 37.Here, the next door 37 and second interlayer dielectric 35 are same, as making public electrode 72 and auxiliary electrode 150 bring into play function with the insulating barrier of transistor 40,50,60 insulation.And same with above-mentioned first execution mode, the end E4 of auxiliary electrode 150 overlaps with power line 140 with second electrode, and the end E4 of the relative auxiliary electrode 150 of end E2 of public electrode 72 more relies on the inboard, and is formed on the outside of the end E1 of second interlayer dielectric 35.
The summary of the manufacturing process of light-emitting device 1A is as described below.After forming second interlayer dielectric 35, form pixel electrode 76 on the upper strata of second interlayer dielectric 35.Then, form next door 37, and the surface except peristome 37a on second interlayer dielectric 35 and next door 37 forms auxiliary electrode 150 on the upper strata of pixel electrode 76.Then, the space (that is peristome 37a) on the pixel electrode 76 of being delimited by next door 37 forms light emitting functional layer 74.In addition, also can after forming light emitting functional layer 74, form auxiliary electrode 150 conversely.And then, spread all over effective coverage A and neighboring area B forms transparent public electrode 72.Then, on public electrode 72, form diaphragm seal 80.But, not forming diaphragm seal 80 at the external end edge of substrate 10, this external end edge is in circuit and protects joint seal 90 on the expansion film 34, and engages transparent sealing substrate 110 at an upper portion thereof.
If after having formed auxiliary electrode 150, form light emitting functional layer 74, even then owing to do not form light emitting functional layer 74 in the moment that forms auxiliary electrode 150, so, even if the formation of auxiliary electrode 150 has adopted photoetching process also needn't worry to make light emitting functional layer 74 deteriorations.Therefore, can form the pattern of auxiliary electrode 150 by photoetching process, thereby, can be with the precision formation auxiliary electrode 150 same with wirings such as transistor 40,50,60 and scan lines 111.On the other hand, if after having formed light emitting functional layer 74, form auxiliary electrode 150, then has the advantage that can under the situation that auxiliary electrode 150 can not polluted by luminescent material, connect auxiliary electrode 150 and public electrode 72.
And, in this variation, owing to formed public electrode 72 on the upper strata of auxiliary electrode 150, so, even if form the auxiliary electrode 150 thicker than public electrode 72, can be to public electrode 72 stress applications yet.Therefore, can suppress to make public electrode 72 distortion because of stress from the upper strata.
In addition, auxiliary electrode 150 can utilize and public electrode 72 identical materials, and auxiliary electrode 150 can also utilize the high material of resistance ratio public electrode 72.Under this situation, thick by the Film Thickness Ratio public electrode 72 that makes auxiliary electrode 150, can make the resistance of resistance ratio public electrode 72 of auxiliary electrode 150 low.
＜B: second execution mode 〉
Then, the related light-emitting device 1B of second execution mode of the present invention is described.Light-emitting device 1B more relies on the position in the outside with the end E3 of the inboard of power line 14 except the end E2 of public electrode 72 is positioned at relative second electrode, and is same with the light-emitting device 1 (Fig. 4) or the light-emitting device 1A (Fig. 7) of first execution mode.Therefore, suitably omit this explanation.
Fig. 8 represents the local simple profile of light-emitting device 1B.As shown in Figure 8, same with above-mentioned first execution mode in light-emitting device 1B, the end E2 of public electrode 72 is formed on relative second interlayer dielectric 35 in the face of substrate 10 end E1 more relies on the position in the outside, and the end E4 of auxiliary electrode 150 more relies on the inboard relatively.Therefore, can access the effect same with above-mentioned execution mode.
And in light-emitting device 1B, the end E2 of public electrode 72 is positioned at relative second electrode more relies on the outside with the end E3 of the inboard of power line 140 position.Second electrode all is electrically connected via auxiliary electrode 150 in first and second execution mode with power line 140 and public electrode 72.But in the first embodiment, public electrode 72 more relies on inboard place at relative second electrode with the end E3 of the inboard of power line 140 and joins with auxiliary electrode 150, and in second execution mode, also joins with auxiliary electrode 150 with holding between the E2 at end E3.Therefore, can reduce, compare, can suppress to cause the brightness disproportionation of light-emitting component 70 because of the reduction of voltage with the formation of above-mentioned first execution mode from the resistance of public electrode 72 to second electrodes with power line 140.
＜C: the 3rd execution mode 〉
Then, the related light-emitting device of the 3rd execution mode of the present invention is described.Fig. 9 is the part sectioned view of the light-emitting device 2A of present embodiment.As shown in Figure 9, auxiliary electrode 150 forms according to the mode that contacts on public electrode 70, and forms diaphragm seal 80 according to the mode that covers auxiliary electrode 150 and public electrode 72.Light-emitting device 2A is except public electrode 72 is formed on the lower floor of auxiliary electrode 150, and is same with the light-emitting device 1A (Fig. 7) of the variation of first execution mode.Therefore, suitably omit its explanation.
Same with above-mentioned light-emitting device 1A, in the part that has next door 37, the upper strata of next door 37 forms auxiliary electrode 150 in the present embodiment.Therefore, the next door 37 and second interlayer dielectric 35 are same, play a role as the insulating barrier that public electrode 72 and auxiliary electrode 150 are separated from transistor 40,50,60.
The summary of the manufacturing process of light-emitting component 2A is as described below.After having formed second interlayer dielectric 35, form pixel electrode 76 on the upper strata of second interlayer dielectric 35.Then, form next door 37, and the space (that is peristome 37a) on the pixel electrode 76 of being delimited by next door 37 forms light emitting functional layer 74 on the upper strata of pixel electrode 76.And then, spread all over effective coverage A and neighboring area B and form public electrode 72 with light transmission.Then, the zone except the upper strata of peristome 37a on public electrode 72 forms auxiliary electrode 150, and forms diaphragm seal 80.But, not forming diaphragm seal 80 at the external end edge of substrate 10, this external end edge is in and engages seal 90 on the circuit protection film 34, and engages transparent sealing substrate 110 at an upper portion thereof.
The simple profile of regional F in Figure 10 presentation graphs 9.As Fig. 9 and shown in Figure 10, among the light-emitting device 2A, the outside in the face that relatively more relies on substrate 10 as the transistor 40,50 of the part of scan line drive circuit 100, the end E2 of public electrode 72 form relatively the end E1 of second interlayer dielectric 35 more rely on the outside, relatively the end E4 of auxiliary electrode 150 more relies on the inboard.Therefore, can obtain and the identical effect of above-mentioned first execution mode.
And, because public electrode 72 is formed on the lower floor of auxiliary electrode 150, so, compare with the formation of above-mentioned second execution mode, can reduce the influence because of the ladder of auxiliary electrode 150 produces broken string or chaps in public electrode 72 possibility.Therefore, can suppress that voltages in the common electrode on business 72 reduce and the brightness disproportionation that causes light-emitting component 70.
＜D: the 4th execution mode 〉
Then, the related light-emitting device 2B of the 4th execution mode of the present invention is described.In light-emitting device 2B, public electrode 72 is formed on the lower floor of auxiliary electrode 150, and the end E2 of public electrode 72 is positioned at relative second electrode more relies on the outside with the end E3 of the inboard of power line 140 position.Wherein, light-emitting device 2A light-emitting device 2A with the 3rd execution mode except above-mentioned situation is identical.Therefore, suitably omit its explanation.
Figure 11 represents the local simple profile of light-emitting device 2B.As shown in figure 11, same with above-mentioned first execution mode, the end E2 of public electrode 72 in the face of substrate 10, form relatively the end E1 of second interlayer dielectric 35 more rely on the outside, relatively the end E4 of auxiliary electrode 150 more relies on the inboard.Therefore, can obtain the effect same with first execution mode.
And in light-emitting device 2B, public electrode 72 is formed on the lower floor of auxiliary electrode 150, and the end E2 of public electrode 72 is positioned at relative second electrode more relies on the outside with the end E3 of the inboard of power line 140 position.Therefore, can reduce the possibility that in public electrode 72, produces broken string or be full of cracks because of the influence of the ladder of auxiliary electrode 150.In addition, because public electrode 72 has and second electrode power line 140 superposed part, so auxiliary electrode 150 and public electrode 72 both sides are in the contact area electrical connection of second electrode with power line 140.Therefore, can suppress to cause the brightness disproportionation of light-emitting component 70 because of the reduction of voltage.
＜E: variation 〉
(1) in above-mentioned first～the 4th execution mode; by cover the upper strata of public electrode 72 or auxiliary electrode 150 by diaphragm seal 80; protection comprises that element layer 30, second electrode are not subjected to the influence of extraneous gas with the layer structure of power line 140, second interlayer dielectric 35, public electrode 72, auxiliary electrode 150, but can save diaphragm seal 80 yet.
Figure 12 represents the simple profile of the light-emitting device 1E of this variation.As shown in figure 12, diaphragm seal 80 is not set among the light-emitting component 1E, protects by the layer structure that forms on seal 90 and 110 pairs of substrates 10 of counter substrate.In addition, can be used for the drier (omitting diagram) of adsorption moisture or self imbed drier in the configuration of the inboard of counter substrate 110 in counter substrate 110.In addition, can also substitute counter substrate 110 and seal 90 and adopt hermetically sealed can.
Figure 13 represents the simple profile of other light-emitting devices 1F of this variation.As shown in figure 13, by between the layer structure that forms on counter substrate 110 and the substrate 10, filling moisture resistance inserts 65, prevent that layer structure is subjected to the influence of extraneous gas among the light-emitting device 1F.The preferred material that adopts photopermeability, low moisture absorption is as moisture resistance inserts 65, and can utilize epoxy system or carbamate is binding agent etc.
(2) in above-mentioned first～the 4th execution mode, second electrode is illustrated with power line 140 forms the コ font in the B of neighboring area mode, but is not limited to this, can also carry out suitable distortion.
Figure 14 and Figure 15 are used for the figure that the summary layout to each light-emitting device of present embodiment describes.In these figure, give identical symbol to the part identical, and suitably omit its explanation with above-mentioned execution mode.
Shown in Figure 14 (A), in light-emitting device 3A, dispose second electrode with power line 140 along each edge part on the opposed both sides of substrate 10.And at configuration signal input terminal G in the zone on a limit on residue both sides, the inboard in 10 of the substrates of this signal input terminal G disposes first electrode with power line 130.At second electrode with the inboard of power line 140 respectively along effective coverage A configuration scan line drive circuit 100A and 100B, with power line 140 power supplies, and give control signal by second electrode from the outside via signal input terminal G.In addition, in the inboard of first electrode, dispose data line drive circuit 200 along effective coverage A with power line 130.Data line drive circuit 200 by first electrode with power line 130 power supply in, obtain control signal via signal input terminal G, and give to each data wire from the outside.
In this example, second interlayer dielectric 35 forms whole and first electrode that covers effective coverage A, scan line drive circuit 100A, 100B, data line drive circuit 200 and uses the part of power line 130 (in illustrated embodiment, when the limit that will be provided with signal input terminal G is made as long side direction, be the whole of the part of extending at long side direction and with the direction of long side direction quadrature a part towards the part of bottom's extension of substrate 10).And, public electrode 72 covers the whole of effective coverage A and scan line drive circuit 100A, 100B, be equipped with second electrode and more rely on the outside with the end of relative second interlayer dielectric 35 of end about its of power line 140 1 sides, and, form and be positioned at second electrode and overlap with power line 140 with the inboard of power line 140 or with second electrode.On the other hand, in the end of public electrode 72, the end of following avris (signal input terminal G side) is positioned at the outside of effective coverage A and in the inboard of data line drive circuit 200, and the end that the end of last avris is positioned at relative second interlayer dielectric 35 more relies on the position in the outside.In addition, using under the situation of power line 140 with the power line 130 and second electrode by different layer formation first electrodes, can be same with other limit, the end that makes the end of public electrode 72 be positioned at the following avris of relative second interlayer dielectric 35 more relies on the position in the outside and covers second interlayer dielectric 35 fully.That is, in this variation, the second area that is formed with public electrode 72 at least the right and left side of substrate 10 and on avris more outstanding than the first area that is formed with second interlayer dielectric 35.
Auxiliary electrode forms the striated absolute electrode 150c of the direction identical with the limit that is equipped with signal input terminal G as long limit.Specifically, absolute electrode 150c passes through the gap of light-emitting component 70 in the A of effective coverage, inboard by the first area in the B of neighboring area, be the outside of first area and be the area inside of second area, the outside up to second area, and extend to the zone that overlaps with power line 140 with second electrode, be electrically connected with power line 140 with second electrode.That is, the end of relative second interlayer dielectric 35 of its end more relies on the outside, and is positioned at the position that relies on the outside than the end of public electrode 72.According to this variation, also can obtain the effect same with the respective embodiments described above.
Then, shown in Figure 14 (B), light-emitting device 3B forms and the same formation of light-emitting device 3A except the position counter-rotating of scan line drive circuit and data line drive circuit.That is, in light-emitting device 3B, along effective coverage A configuration, data line drive circuit 200A, 200B are configured among the neighboring area B of each left side of substrate 10 and the right side scan line drive circuit 100 in the B of the neighboring area of the following avris of substrate 10.Second electrode is with power line 140 opposed two limits (the right and left) configuration along substrate 10 in the outside of each data line drive circuit 200A, 200B, absolute electrode 150c forms and will be made as the striated on long limit with the direction of power line 140 quadratures (that is, direction) identical with the limit that is equipped with signal input terminal G with second electrode.3A is same with light-emitting device, each end about absolute electrode 150c form the end that is positioned at relative second interlayer dielectric 35 more rely on the outside and relatively public electrode 72 more rely on the position in the outside, overlap with power line 140 with second electrode and join.Therefore, according to light-emitting device 3B, also can access the effect same with above-mentioned execution mode.
In addition, among any one of light-emitting device 3A and 3B, all can be shown in the right side of Figure 14 (A), a plurality of absolute electrode 150c that absolute electrode 150c has a striated be formed at neighboring area B and be connected the connection electrode 150d of a plurality of absolute electrode 150c.Under this situation, connection electrode 150d has with the inboard superposed part of first area with by being the outside of first area and being the part of the area inside of second area up to the outside of second area, and forms with second electrode and overlap with power line 140.That is, connection electrode 150d not only overlaps with power line 140 with second electrode, and is configured to the end of second interlayer dielectric 35 and the end of public electrode 72 overlaps with connection electrode 150d.
Figure 15 (A) reaches (B) other layouts of expression light-emitting device.Shown in Figure 15 (A), the lower limb along substrate 10 in light-emitting device 4A disposes signal input terminal G, and side is equipped with second electrode power line 140 with コ word shape within it.And, be equipped with first electrode with power line 130 with the inboard of power line 140 with コ word shape at second electrode, and between this first electrode is with power line 130 and effective coverage A, be equipped with data line drive circuit 200.Scan line drive circuit 100A, 100B are provided in respectively along the zone of the left and right sides Ge Bian of effective coverage A.
As shown in the figure, second interlayer dielectric 35 forms the part (when the limit that in illustrated embodiment will be equipped with signal input terminal G be made as long side direction, along the part of long side direction extension) of whole and first electrode of covering effective coverage A integral body, scan line drive circuit 100A, 100B, data line drive circuit 200 with power line 130.Public electrode 72 forms and covers the part roughly the same with second interlayer dielectric 35, and covers second interlayer dielectric 35 fully.That is, all avris in its rectangular area, the end of public electrode 72 are positioned at the position that relative second interlayer dielectric 35 more relies on the outside in the face of substrate 10.Therefore, in this variation, at all avris of substrate 10, the lateral direction of first area in the face of substrate 10 that the second area that is formed with public electrode 72 is formed with second interlayer dielectric 35 relatively is outstanding.
As shown in the figure, to form with the direction parallel with scan line drive circuit 100A, 100B be the striated absolute electrode 150e that extend on long limit to auxiliary electrode.The end of the absolute electrode 150e of substrate 10 lower end side forms to overlap with power line 140 with second electrode and joins.In addition, in this example, absolute electrode 150e intersects with power line 130 with first electrode, but, absolute electrode 150e is not formed join and only join with power line 140 with power line 130 with second electrode with first electrode by forming first electrode with different layers with power line 130 and second electrode power line 140.Equally, though public electrode 72 overlaps with power line 130 with first electrode, public electrode 72 is not electrically contacted with power line 130 with first electrode by forming first electrode power line 130 and second electrode power line 140 with different layers, can constituting.On the other hand, the end of the absolute electrode 150e of substrate 10 upper end side relies on the outside than the end (first area) of second interlayer dielectric 35, and the end (second area) that is positioned at relative public electrode 72 more relies on the position in the outside.Therefore, according to light-emitting device 4A, also can obtain the effect same with the respective embodiments described above.
Then, shown in Figure 15 (B), light-emitting device 4B forms and the same formation of light-emitting device 4A except with scan line drive circuit and data line drive circuit out of position.That is, among the light-emitting device 4B, in the neighboring area B of 10 times avris of substrate, dispose scan line drive circuit 100, in the neighboring area B of each left side of substrate 10 and the right side, dispose data line drive circuit 200A, 200B along effective coverage A.Second electrode is configured to relative signal input terminal G in substrate 10 lower end side with コ word shape with power line 140 and more relies on the inboard, and it is the striated on long limit that absolute electrode 150e forms with the direction parallel with data line drive circuit 200A, 200B.4A is same with light-emitting device, and each end up and down of absolute electrode 150e relies on the outside than the end of second interlayer dielectric 35, and is positioned at the position that relies on the outside than the end of public electrode 72, and forms the lower end and overlap with power line 140 with second electrode and join.Therefore, according to light-emitting device 4B, also can obtain the effect same with above-mentioned execution mode.
Shown in Figure 14 (A), Figure 14 (B), Figure 15 (A) and Figure 15 (B), in the B of neighboring area, absolute electrode 150c, 150e are extending with striated with the direction that the bearing of trend of power line 140 intersects with second electrode.That is, in Fig. 1～Fig. 3, auxiliary electrode 150 also extends at the bearing of trend of second electrode usefulness power line 140, but the direction that also can only intersect at the bearing of trend with second electrode usefulness power line 140 is extended.In other words, auxiliary electrode 150 not necessarily must form parallel with the bearing of trend of power line 140 with second electrode, intersects with power line 140 as long as form with second electrode.
＜F: electronic equipment 〉
Then, the electronic equipment that has utilized light-emitting device of the present invention is described.Figure 16～Figure 18 has represented the form of the light-emitting device that above any one mode is related as the electronic equipment of display unit.
Figure 16 is the stereogram of formation that the portable personal computer of light-emitting device has been adopted in expression.Personal computer 2000 possesses: show light-emitting device 1,1A, 1B, 1E, 1F, 2A, 2B, 3A, 3B, 4A, the 4B of various images and be provided with the main part 2010 of mains switch 2001 and keyboard 2002.Because light-emitting device 1,1A, 1B, 1E, 1F, 2A, 2B, 3A, 3B, 4A, 4B use organic light-emitting diode element as light-emitting component 70, so, but display view angle is broad and the picture that is easy to watch.
Figure 17 is the stereogram of formation that the mobile phone of light-emitting device has been used in expression.Mobile phone 3000 possesses a plurality of action buttons 3001 and scroll button 3002 and shows light-emitting device 1,1A, 1B, 1E, 1F, 2A, 2B, 3A, 3B, 4A, the 4B of various images.By operation scroll button 3002, can make the picture rolling that is shown in light-emitting device 1,1A, 1B, 1E, 1F, 2A, 2B, 3A, 3B, 4A, 4B.
Figure 18 is the stereogram of formation that the portable information terminal (PDA:Personal DigitalAssistants) of light-emitting device has been used in expression.Information portable terminal device 4000 possesses: a plurality of action buttons 4001 and mains switch 4002 and show light-emitting device 1,1A, 1B, 1E, 1F, 2A, 2B, 3A, 3B, 4A, the 4B of various images.If operating power switch 4002, then various information such as address list or schedule can be shown in light-emitting device 1,1A, 1B, 1E, 1F, 2A, 2B, 3A, 3B, 4A, 4B.
In addition, as the electronic equipment of having used light-emitting device of the present invention, except the equipment of Figure 16～shown in Figure 180, also can enumerate: digital still camera, TV, video camera, vehicle navigation apparatus, beep-pager, electronic notebook, Electronic Paper (electronic paper), computer, word processor, work station, video telephone, POS terminal, printer, scanner, photocopier, video player, possess the equipment of touch-screen etc.And the purposes of light-emitting device of the present invention is not limited to image and shows.For example in image processing systems such as optical-write-in mode printer or electronic copier, can use the shaven head (write head) that photoreceptor is exposed according to the image that should be formed at, and light-emitting device of the present invention can be used as this shaven head and use with paper.
Claims (13)
1, a kind of light-emitting device, on substrate, have effective coverage of having arranged a plurality of light-emitting components and the neighboring area that surrounds this effective coverage, described each light-emitting component has and is positioned at first electrode and second electrode luminescent layer between the two, described second electrode needle is to the public setting of described a plurality of light-emitting components, this light-emitting device has and has disposed the element layer that is used for the luminous circuit element of controlling of described light-emitting component
Described light-emitting device has:
The auxiliary electrode that is electrically connected with described second electrode; With
Insulating barrier, it has the upper strata that is configured in described element layer, and is configured in the part that described relatively second electrode and described auxiliary electrode more rely on the position of lower floor, is used to make the insulation of described second electrode and described auxiliary electrode and described circuit element;
Described second electrode covers described effective coverage, and gives prominence to and be formed uniformly to described neighboring area,
Described auxiliary electrode by the gap of described a plurality of light-emitting components, is formed in the part of described neighboring area in described effective coverage,
In described neighboring area, the end of described second electrode is positioned at described relatively auxiliary electrode in the face of described substrate end more relies on inboard position, and the end that is positioned at described relatively insulating barrier more relies on the position in the outside.
2, light-emitting device according to claim 1 is characterized in that,
In described neighboring area, be equipped with the second electrode power line that is used for supplying with current potential to described second electrode,
Described auxiliary electrode have not with the described second electrode superposed part in the part of joining with power line with described second electrode.
3, light-emitting device according to claim 1 and 2 is characterized in that,
Described second electrode is configured in the position that described relatively auxiliary electrode more relies on lower floor.
4, light-emitting device according to claim 3 is characterized in that,
Each of described second electrode and described auxiliary electrode has the part of joining with power line with described second electrode.
5, light-emitting device according to claim 1 is characterized in that,
In described neighboring area, be equipped with the second electrode power line that is used for supplying with current potential to described second electrode,
Described auxiliary electrode has part top and that second electrode joins and following and described second electrode joins with power line.
6, a kind of light-emitting device has effective coverage of having arranged a plurality of light-emitting components and the neighboring area that surrounds this effective coverage on substrate, this light-emitting device possesses:
Each a plurality of first electrode that are provided with accordingly with described a plurality of light-emitting components;
Second electrode at the public setting of described a plurality of light-emitting components;
Luminescent layer between described a plurality of first electrodes and described second electrode;
The auxiliary electrode that is electrically connected with described second electrode;
Dispose the element layer that is used for the luminous circuit element of controlling of described light-emitting component; With
Be used to make the insulating barrier that insulate between described second electrode or described auxiliary electrode and the described element layer;
Described insulating barrier is set at the first area of at least a portion that comprises described effective coverage integral body and described neighboring area,
Described second electrode overlaps with described first area in the integral body of described effective coverage, is arranged on described relatively first area at the outstanding second area of first direction in described neighboring area,
Described auxiliary electrode is provided in the gap of passing through described a plurality of light-emitting components in the described effective coverage, and, be provided in the outstanding side in the described relatively first area of described second area in the described neighboring area, inboard by described first area and be the outside of described first area and be the area inside of described second area is up to the outside of described second area.
7, light-emitting device according to claim 6 is characterized in that,
Described a plurality of light-emitting component is arranged in rectangular,
Described auxiliary electrode has: according to the gap by described a plurality of light-emitting components and from the inboard of described effective coverage up to the mode in the outside, be arranged to a plurality of absolute electrodes of striated along described first direction.
8, light-emitting device according to claim 7 is characterized in that,
Described auxiliary electrode also has in described neighboring area the interconnective connection electrode of described a plurality of absolute electrodes.
9, light-emitting device according to claim 8 is characterized in that,
The mode that overlaps with described connection electrode according to the end of the described first direction of described insulating barrier disposes described connection electrode.
10, light-emitting device according to claim 6 is characterized in that,
Described a plurality of light-emitting component is arranged in rectangular,
Described auxiliary electrode be according to the gap by described a plurality of light-emitting components and from the inboard of described effective coverage up to the mode in the outside of described second area, be arranged to a plurality of absolute electrodes of striated along described first direction.
11, according to each described light-emitting device in the claim 6～10, it is characterized in that,
Be used for supplying with the second electrode power line of current potential, be set in the described neighboring area according to the mode of intersecting with described first direction to described second electrode,
Described second electrode is electrically connected with described auxiliary electrode with power line.
12, light-emitting device according to claim 11 is characterized in that,
Described second electrode is set at the outside of described first area with power line.
13, a kind of electronic equipment has the described light-emitting device of claim 1～12.
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| Application Number | Priority Date | Filing Date | Title |
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| JP2007028842 | 2007-02-08 | ||
| JP2007-028842 | 2007-02-08 | ||
| JP2007028842 | 2007-02-08 | ||
| JP2007319269A JP5401784B2 (en) | 2007-02-08 | 2007-12-11 | Light emitting device |
| JP2007-319269 | 2007-12-11 | ||
| JP2007319269 | 2007-12-11 |
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| CN101242691A true CN101242691A (en) | 2008-08-13 |
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| CN2008100058083A Active CN101242691B (en) | 2007-02-08 | 2008-02-05 | Light emitting device |
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| JP (1) | JP5401784B2 (en) |
| KR (1) | KR101469767B1 (en) |
| CN (1) | CN101242691B (en) |
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Also Published As
| Publication number | Publication date |
|---|---|
| JP2008216975A (en) | 2008-09-18 |
| JP5401784B2 (en) | 2014-01-29 |
| CN101242691B (en) | 2011-06-15 |
| KR101469767B1 (en) | 2014-12-05 |
| TW200906219A (en) | 2009-02-01 |
| TWI455643B (en) | 2014-10-01 |
| KR20080074738A (en) | 2008-08-13 |
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