JP2002352963A - Display device - Google Patents
Display deviceInfo
- Publication number
- JP2002352963A JP2002352963A JP2001153327A JP2001153327A JP2002352963A JP 2002352963 A JP2002352963 A JP 2002352963A JP 2001153327 A JP2001153327 A JP 2001153327A JP 2001153327 A JP2001153327 A JP 2001153327A JP 2002352963 A JP2002352963 A JP 2002352963A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- light
- film
- display device
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000011651 chromium Substances 0.000 claims description 20
- 229910052804 chromium Inorganic materials 0.000 claims description 19
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 17
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 12
- 229910000423 chromium oxide Inorganic materials 0.000 claims description 12
- 239000011347 resin Substances 0.000 claims description 12
- 229920005989 resin Polymers 0.000 claims description 12
- 239000004020 conductor Substances 0.000 claims description 9
- 239000010408 film Substances 0.000 description 106
- 239000010410 layer Substances 0.000 description 89
- 229920001721 polyimide Polymers 0.000 description 20
- 238000000034 method Methods 0.000 description 17
- 238000004519 manufacturing process Methods 0.000 description 12
- 239000011159 matrix material Substances 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 11
- 239000011229 interlayer Substances 0.000 description 10
- 239000002356 single layer Substances 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 230000031700 light absorption Effects 0.000 description 6
- 239000010409 thin film Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 3
- 238000007738 vacuum evaporation Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910007541 Zn O Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 150000001844 chromium Chemical class 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- -1 8-quinolinol aluminum Chemical compound 0.000 description 1
- 101100321669 Fagopyrum esculentum FA02 gene Proteins 0.000 description 1
- 229910019015 Mg-Ag Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- IAQWMWUKBQPOIY-UHFFFAOYSA-N chromium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Cr+4] IAQWMWUKBQPOIY-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- ADUFDSSCDCLUFT-UHFFFAOYSA-N n-[4-(4-aminophenyl)phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC(N)=CC=C1C1=CC=C(N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 ADUFDSSCDCLUFT-UHFFFAOYSA-N 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
Classifications
-
- H01L51/5281—
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は表示装置に関し、特
には画素間に補助電極を設けてなる表示装置に関する。The present invention relates to a display device, and more particularly to a display device having an auxiliary electrode provided between pixels.
【０００２】[0002]
【従来の技術】自発光型の素子（以下、発光素子と記
す）である有機エレクトロルミネッセンス(electrolumi
nescence：以下ＥＬと記す）素子は、カソード電極また
はアノード電極となる下部電極と上部電極との間に、有
機発光層を含む有機ＥＬ膜を挟持してなり、低電圧直流
駆動による高輝度発光が可能な発光素子として注目され
ている。2. Description of the Related Art Organic light-emitting devices (hereinafter referred to as light-emitting devices) are known as organic electroluminescent devices.
The device has an organic EL film including an organic light emitting layer interposed between a lower electrode serving as a cathode electrode or an anode electrode and an upper electrode, and emits high-luminance light by low-voltage DC driving. It is attracting attention as a possible light emitting element.
【０００３】このような発光素子を用いた表示装置（す
なわち有機ＥＬディスプレイ）において、例えば各画素
に薄膜トランジスタが設けられたアクティブマトリック
ス型の表示装置では、基板上に形成された薄膜トランジ
スタを覆う状態で層間絶縁膜が設けられ、この層間絶縁
膜上の各画素部に発光素子が設けられている。ところ
で、このアクティブマトリックス型の表示装置において
発光素子の開口率を確保するためには、発光素子で発生
させた発光光を基板と反対側の上部電極側から取り出
す、いわゆる上面光取り出し構造（以下、上面発光型と
記す）として構成することが有効になる。In a display device using such a light emitting element (ie, an organic EL display), for example, in an active matrix type display device in which a thin film transistor is provided in each pixel, an interlayer is provided so as to cover the thin film transistor formed on the substrate. An insulating film is provided, and a light emitting element is provided in each pixel portion on the interlayer insulating film. By the way, in order to secure the aperture ratio of the light emitting element in the active matrix type display device, a so-called top light extraction structure (hereinafter, referred to as a light extraction structure) in which light emitted from the light emitting element is extracted from the upper electrode side opposite to the substrate. It will be effective to configure as a top emission type.
【０００４】ここで、上面発光型の表示装置では、光透
過性材料によって上部電極が形成されることになるが、
このような材料は抵抗値が大きいため上部電極内におい
て電圧勾配が発生して電圧降下が生じ易い。そこで、各
発光素子が設けられた画素間に、上部電極に接続させる
状態で補助電極を設け、これによって発光強度の低下を
抑えている。Here, in a top emission type display device, an upper electrode is formed of a light transmitting material.
Since such a material has a large resistance value, a voltage gradient is generated in the upper electrode and a voltage drop is likely to occur. Therefore, an auxiliary electrode is provided between the pixels provided with the respective light emitting elements in a state of being connected to the upper electrode, thereby suppressing a decrease in light emission intensity.
【０００５】[0005]
【発明が解決しようとする課題】ところが、上述した構
成の表示装置のように、補助配線を設けた表示装置にお
いては、この補助配線が上部電極を透過して表示面側か
ら見えることになる。通常、補助電極は、アルミニウム
のような低抵抗材料で形成されており、外光反射が大き
い。このため、上部電極側からの外光が補助配線で反射
し、表示装置のコントラストを低下させる要因になって
いる。However, in a display device provided with auxiliary wirings, such as the display device having the above-described structure, the auxiliary wirings pass through the upper electrode and can be seen from the display surface side. Usually, the auxiliary electrode is formed of a low-resistance material such as aluminum, and has a large external light reflection. For this reason, external light from the upper electrode side is reflected by the auxiliary wiring, which causes a reduction in the contrast of the display device.
【０００６】[0006]
【課題を解決するための手段】そこで本発明は、第１電
極と光透過性材料からなる第２電極との間に発光層を挟
持した状態で基板上に配列された発光素子と、第２電極
に接続された状態でこれらの発光素子間に配置された補
助電極とを備えた表示装置において、補助電極の表面に
光吸収層を設けたことを特徴としている。SUMMARY OF THE INVENTION Accordingly, the present invention provides a light emitting element arranged on a substrate with a light emitting layer sandwiched between a first electrode and a second electrode made of a light transmitting material. In a display device including an auxiliary electrode disposed between these light emitting elements while being connected to the electrode, a light absorbing layer is provided on a surface of the auxiliary electrode.
【０００７】このような構成の表示装置においては、光
透過性材料からなる第２電極側から発光層側に入射され
る外光のうち、発光素子間に入射される外光は、補助配
線の表面に設けられた光吸収層によって吸収される。し
たがって、発光層で生じた発光光を光透過性材料からな
る第２電極側から取り出して表示する際に、発光素子間
に設けられた補助配線での外光反射によるコントラスト
の低下が防止される。In the display device having such a configuration, of the external light incident on the light emitting layer side from the second electrode side made of the light transmissive material, the external light incident between the light emitting elements is used for the auxiliary wiring. It is absorbed by the light absorbing layer provided on the surface. Therefore, when the light emitted from the light emitting layer is taken out from the second electrode side made of a light transmitting material and displayed, a decrease in contrast due to reflection of external light on the auxiliary wiring provided between the light emitting elements is prevented. .
【０００８】[0008]
【発明の実施の形態】以下、本発明の表示装置の実施の
形態を図面に基づいて説明する。尚ここでは、発光素子
として有機ＥＬ素子を配列形成してなるアクティブマト
リックス方式の上面発光型表示装置を例示して実施形態
の説明を行う。しかし、本発明は、発光素子として有機
ＥＬ素子を用いたものに限定されることはなく、例えば
無機電界発光素子のような自発光型の発光素子を用いた
表示装置に広く適用可能である。また、アクティブマト
リックス方式に限定されることもなく、単純マトリック
ス方式の表示装置にも適用可能である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the display device of the present invention will be described with reference to the drawings. Here, the embodiment will be described by exemplifying an active matrix type top emission display device in which organic EL elements are arranged and formed as light emitting elements. However, the present invention is not limited to a device using an organic EL element as a light emitting element, and is widely applicable to a display device using a self-luminous light emitting element such as an inorganic electroluminescent element. Further, the present invention is not limited to the active matrix type, and can be applied to a display device of a simple matrix type.
【０００９】表示装置の構成 図１は、本実施形態における表示装置の構成を説明する
ための断面図である。この図に示す表示装置は、例えば
ガラス基板からなる基板１上の各画素に対応させて、薄
膜トランジスタ（thin film transistor：以下ＴＦＴと
記す）２が配列形成されている。尚、ここで例示した表
示装置は上面発光型であるため、基板１は光透過性を有
する材料である必要はなく、ガラス基板以外の他の基板
（例えばシリコン基板等）を用いても良く、この基板の
表面層に駆動用のトランジスタを配列形成しても良い。[0009] Configuration FIG. 1 of the display device is a cross-sectional view for explaining a structure of a display device in this embodiment. In the display device shown in this figure, thin film transistors (hereinafter, referred to as TFTs) 2 are arranged and formed in correspondence with each pixel on a substrate 1 made of, for example, a glass substrate. Since the display device exemplified here is a top emission type, the substrate 1 does not need to be made of a material having a light transmitting property, and a substrate other than a glass substrate (for example, a silicon substrate) may be used. Driving transistors may be arranged and formed on the surface layer of the substrate.
【００１０】また基板１上には、ＴＦＴ２を覆う状態で
絶縁膜３が設けられ、この絶縁膜３に形成した接続孔
（図示省略）を介してＴＦＴ２に接続させた配線４が、
絶縁膜３上に設けられている。An insulating film 3 is provided on the substrate 1 so as to cover the TFT 2, and a wiring 4 connected to the TFT 2 through a connection hole (not shown) formed in the insulating film 3 is provided.
It is provided on the insulating film 3.
【００１１】この絶縁膜３上には、配線４を覆う状態で
層間絶縁膜５が表面平坦に形成されている。この層間絶
縁膜５には、配線４に達する接続孔６が設けられてい
る。そして、この接続孔６を介して配線４に接続された
第１電極７が、層間絶縁膜５上に各画素に対応させてパ
ターン形成されている。この第１電極７は、例えば発光
素子の陽極として用いられるもので、Ａｕ（金）、Ｐｔ
（プラチナ）、Ｃｒ（クロム）に代表されるような仕事
関数の高い材料を用いて構成されていることとする。
尚、この第１電極７は、陰極として用いられても良く、
この場合にはこの第１電極７は、仕事関数の低い導電性
材料を用いて構成されることとする。On the insulating film 3, an interlayer insulating film 5 is formed so as to cover the wiring 4 so as to have a flat surface. The interlayer insulating film 5 is provided with a connection hole 6 reaching the wiring 4. A first electrode 7 connected to the wiring 4 via the connection hole 6 is formed on the interlayer insulating film 5 in a pattern corresponding to each pixel. The first electrode 7 is used, for example, as an anode of a light emitting element, and is made of Au (gold), Pt
(Platinum) and a material having a high work function such as Cr (chromium).
Note that the first electrode 7 may be used as a cathode,
In this case, the first electrode 7 is formed using a conductive material having a low work function.
【００１２】また、層間絶縁膜５上には、第１電極７の
周縁を覆う状態で絶縁層８が設けられている。この絶縁
膜８は、例えば酸化シリコン（ＳｉＯ2）などからな
り、第１電極７の表面のみを露出させるようにパターニ
ングされた開口部８ａを備えている。尚、この開口部８
ａがこの表示装置における発光素子部分となる。An insulating layer 8 is provided on the interlayer insulating film 5 so as to cover the periphery of the first electrode 7. The insulating film 8 is made of, for example, silicon oxide (SiO 2 ), and has an opening 8 a patterned so as to expose only the surface of the first electrode 7. In addition, this opening 8
a is a light emitting element portion in this display device.
【００１３】この絶縁膜８上には、アルミニウム（Ａ
ｌ）や銀（Ａｇ）のような導電性の高い材料からなる補
助電極９が設けられている。この補助電極９は、次に説
明する第２電極の導電性を補助するためのもので、絶縁
膜８上に設けられたことによって第１電極７との間の絶
縁性が保たれていることとする。On the insulating film 8, aluminum (A)
An auxiliary electrode 9 made of a highly conductive material such as l) or silver (Ag) is provided. The auxiliary electrode 9 is to assist the conductivity of the second electrode described below, and the insulating property between the auxiliary electrode 9 and the first electrode 7 is maintained by being provided on the insulating film 8. And
【００１４】そして特に、補助配線９の表面には、絶縁
膜８の開口部８ａを狭めることのないように、補助配線
９を覆う状態で光吸収層１０が設けられている。この光
吸収層１０は、絶縁膜８上に設けられた補助電極９の少
なくとも上部表面を覆う状態で設けられ、より好ましく
は図示したように補助電極９の露出表面を完全に覆う状
態で設けられていることとする。In particular, a light absorbing layer 10 is provided on the surface of the auxiliary wiring 9 so as to cover the auxiliary wiring 9 so as not to narrow the opening 8 a of the insulating film 8. The light absorbing layer 10 is provided so as to cover at least the upper surface of the auxiliary electrode 9 provided on the insulating film 8, and is more preferably provided so as to completely cover the exposed surface of the auxiliary electrode 9 as illustrated. And that.
【００１５】このような光吸収層１０は、導電性材料や
樹脂材料を用いて構成されていることとする。The light absorbing layer 10 is made of a conductive material or a resin material.
【００１６】導電性材料を用いて構成された光吸収層１
０としては、酸化クロム（ＣｒＯ2）膜を用いた構成を
例示することができる。この場合、酸化クロム膜を単層
で用いても良く、さらに好ましくは酸化クロム膜の下地
としてクロム膜を配置し、クロム膜と酸化クロム膜との
２層構造としても良い。この場合の一例として、クロム
膜５０ｎｍ、酸化クロム膜１５０ｎｍに設定される。Light absorbing layer 1 made of conductive material
As 0, a configuration using a chromium oxide (CrO 2 ) film can be exemplified. In this case, a chromium oxide film may be used as a single layer, and more preferably, a chromium film is provided as a base of the chromium oxide film, and a two-layer structure of a chromium film and a chromium oxide film may be used. In this case, as an example, the chromium film is set to 50 nm and the chromium oxide film is set to 150 nm.
【００１７】このような導電性材料を用いて光吸収層１
０を構成した場合、この光吸収層１０も、補助電極９の
一部を構成するものとなる。また、光吸収層１０の構成
をクロム膜とその上部の酸化クロム膜との２層構造にし
た場合には、酸化クロム単層の場合よりもさらに高い光
吸収効果を得ることができる。The light absorbing layer 1 made of such a conductive material
When 0 is formed, the light absorption layer 10 also forms a part of the auxiliary electrode 9. When the light absorbing layer 10 has a two-layer structure of a chromium film and a chromium oxide film thereabove, a higher light absorbing effect can be obtained than in the case of a single layer of chromium oxide.
【００１８】また、樹脂材料を用いて構成された光吸収
層１０としては、感光性ポリイミド膜を用いた構成を例
示することができる。この場合、例えば黒色顔料を分散
させた感光性ポリイミド膜を単層で用いても良く、さら
に好ましくは感光性ポリイミド膜の下地としてクロム膜
を配置し、クロム膜と感光性ポリイミド膜との２層構造
としても良い。この場合の一例として、クロム膜５０ｎ
ｍ、感光性ポリイミド膜２．０μｍに設定される。この
ように、光吸収層１０の構成をクロム膜とその上部の樹
脂材料層との２層構造にした場合には、樹脂材料層単層
の場合よりもさらに高い光吸収効果を得ることができ
る。As the light absorbing layer 10 made of a resin material, a structure using a photosensitive polyimide film can be exemplified. In this case, for example, a photosensitive polyimide film in which a black pigment is dispersed may be used as a single layer, and more preferably, a chromium film is arranged as a base of the photosensitive polyimide film, and two layers of a chromium film and a photosensitive polyimide film are used. It is good also as a structure. As an example of this case, the chromium film 50n
m, the photosensitive polyimide film is set to 2.0 μm. As described above, when the light absorbing layer 10 has a two-layer structure of the chromium film and the resin material layer thereabove, a higher light absorbing effect can be obtained than in the case of a single resin material layer. .
【００１９】尚、光吸収層１０として樹脂材料を用いる
場合であって、この光吸収層１０によって完全に補助電
極９の露出面が覆われる場合、樹脂材料膜には、数画素
に１個所程度の割合で補助電極９に達する接続孔（図示
省略）を設け、この接続孔を介して次に説明する第２電
極と補助配線９との接続状態を確保する。この接続孔の
形成位置は、特に限定されることはないが、この表示装
置の画質に対する影響がより小さい位置とすることが好
ましい。In the case where a resin material is used as the light absorbing layer 10, and when the exposed surface of the auxiliary electrode 9 is completely covered by the light absorbing layer 10, the resin material film has about one place in several pixels. A connection hole (not shown) reaching the auxiliary electrode 9 is provided at a ratio of 2. The connection state between the second electrode and the auxiliary wiring 9 described below is secured through this connection hole. The position where the connection hole is formed is not particularly limited, but is preferably a position where the influence on the image quality of the display device is smaller.
【００２０】一方、絶縁膜８の各開口部８ａ内の第１電
極７上には、第１電極７を隙間なく覆う状態で有機ＥＬ
層１１がパターン形成されている。この有機ＥＬ層１１
は、少なくとも有機発光層を有するものであり、必要に
応じて正孔注入層や正孔輸送層などの単層または積層膜
と、電子輸送層や電子注入層などの単層または積層膜間
に、有機発光層を挟持させた層であることとする。一例
としては、陽極として設けられた第１電極７上に、正孔
注入層、正孔輸送層を順次積層し、この上部に電子輸送
層を兼ねた有機発光層を積層させた構成を示すことがで
きる。On the other hand, on the first electrode 7 in each opening 8a of the insulating film 8, the organic EL
Layer 11 is patterned. This organic EL layer 11
Has at least an organic light emitting layer, and if necessary, between a single layer or a laminated film such as a hole injection layer or a hole transport layer and a single layer or a laminated film such as an electron transport layer or an electron injection layer. And an organic light emitting layer. As an example, a configuration is shown in which a hole injection layer and a hole transport layer are sequentially laminated on the first electrode 7 provided as an anode, and an organic light emitting layer also serving as an electron transport layer is laminated thereon. Can be.
【００２１】そして、以上のように設けられた補助電極
９、光吸収層１０および有機ＥＬ層１１を覆う状態で、
第２電極１２が設けられている。この第２電極１２は、
各画素に共通の電極として、基板１上に一枚の層として
設けられていることとする。この第２電極は、第１電極
７が陽極である場合には陰極として設けられ、第１電極
７が陰極である場合には陽極として設けられる。ただ
し、この第２電極１２は、光透過性を備えていることと
する。ここでは、第２電極１２は、例えばＭｇ−Ａｇ薄
膜からなる陰極として設けられていることとする。そし
て、第１電極７と有機ＥＬ層１１と、この第２電極１２
とが順次積層された各部分が、それぞれ発光素子１３と
なる。これらの各発光素子１３には、配線４を介してそ
れぞれＴＦＴ２が接続されている。Then, in a state of covering the auxiliary electrode 9, the light absorbing layer 10 and the organic EL layer 11 provided as described above,
A second electrode 12 is provided. This second electrode 12
It is assumed that the electrode is provided as a single layer on the substrate 1 as an electrode common to each pixel. The second electrode is provided as a cathode when the first electrode 7 is an anode, and is provided as an anode when the first electrode 7 is a cathode. However, it is assumed that the second electrode 12 has optical transparency. Here, the second electrode 12 is provided as a cathode made of, for example, a Mg-Ag thin film. Then, the first electrode 7, the organic EL layer 11, and the second electrode 12
Are sequentially laminated to form the light emitting element 13. The TFT 2 is connected to each of the light emitting elements 13 via the wiring 4.
【００２２】また、この第２電極１２上には、この薄膜
状の第２電極１２を保護すると共にその導電性を確保す
るための透明導電膜１４を設けても良い。この透明導電
膜１４としては、室温成膜においても良好な導電性を示
すＩｎ−Ｚｎ−Ｏ系の透明導電性材料を好適に用いるこ
とができる。On the second electrode 12, a transparent conductive film 14 for protecting the thin-film second electrode 12 and securing its conductivity may be provided. As the transparent conductive film 14, an In—Zn—O-based transparent conductive material that exhibits good conductivity even at room temperature can be suitably used.
【００２３】尚ここでは、第２電極１２の下層に補助電
極９を設けた構成としたが、第２電極１２の上部または
透明導電膜１４の上部に補助電極９を設けた構成であっ
ても良い。このような場合であっても、補助電極９を形
成した状態においての露出表面を光吸収層１０で覆う構
成は同様である。ただしこの場合において、光吸収層１
０として樹脂材料を用いる場合であって、この光吸収層
１０によって完全に補助電極９の露出面が覆われた構成
であっても、補助電極９はその下面において透明導電膜
１４を介して第２電極１２に接続されるため、樹脂材料
膜には接続孔（図示省略）を設ける必要はない。Although the auxiliary electrode 9 is provided below the second electrode 12, the auxiliary electrode 9 is provided above the second electrode 12 or the transparent conductive film 14. good. Even in such a case, the configuration in which the exposed surface in the state where the auxiliary electrode 9 is formed is covered with the light absorbing layer 10 is the same. However, in this case, the light absorbing layer 1
In the case where a resin material is used as 0, even if the exposed surface of the auxiliary electrode 9 is completely covered with the light absorbing layer 10, the auxiliary electrode 9 is formed on the lower surface through the transparent conductive film 14 through the transparent conductive film 14. Since it is connected to the two electrodes 12, it is not necessary to provide a connection hole (not shown) in the resin material film.
【００２４】以上のような構成の表示装置においては、
各有機ＥＬ層１１で生じた発光光が、光透過性材料から
なる第２電極１２側から取り出される上面発光型とな
る。ここで、特にこの表示装置においては、アルミニウ
ムや銀などの導電性が高く、反射率が高い材料からなる
補助電極９の表面（第２電極１２側の表面）が、光吸収
層１０によって覆われている。このため、透明導電膜１
４を介して第２電極１２側から有機ＥＬ層１１側および
補助配線９側に入射した外光は、この補助配線９の表面
を覆う光吸収層１０によって吸収される。さらに、この
補助電極９の下方に配置される配線４などに外光が達す
ることを防止できる。つまり、この光吸収層１０は、発
光素子間に設けられたブラックマトリックスとして作用
することになる。したがって、有機ＥＬ層１１における
発光光を第２電極１２側から取り出して表示する際に、
発光素子１３間に設けられた補助配線９での外光反射、
さらには補助配線９の下方に配置された配線４での外光
反射が抑えられ、コントラストの良好な表示を行うこと
が可能になる。In the display device having the above configuration,
The emission light generated in each organic EL layer 11 is of a top emission type in which the light is extracted from the second electrode 12 side made of a light transmitting material. Here, in this display device, in particular, the surface (the surface on the second electrode 12 side) of the auxiliary electrode 9 made of a material having high conductivity and high reflectivity such as aluminum or silver is covered with the light absorbing layer 10. ing. Therefore, the transparent conductive film 1
External light incident on the organic EL layer 11 side and the auxiliary wiring 9 side from the second electrode 12 side via 4 is absorbed by the light absorbing layer 10 covering the surface of the auxiliary wiring 9. Furthermore, external light can be prevented from reaching the wiring 4 and the like disposed below the auxiliary electrode 9. That is, the light absorbing layer 10 functions as a black matrix provided between the light emitting elements. Therefore, when the light emitted from the organic EL layer 11 is extracted from the second electrode 12 side and displayed,
Reflection of external light on the auxiliary wiring 9 provided between the light emitting elements 13,
Further, reflection of external light on the wiring 4 disposed below the auxiliary wiring 9 is suppressed, and a display with good contrast can be performed.
【００２５】また、この表示装置においては、光吸収層
１０が直接、補助配線９を覆う状態で設けられているた
め、例えば、透明導電膜１４の上方に、さらに偏向板や
波長板を配置する場合と比較して、有機ＥＬ層１１で生
じた発光光を有効に取りだすことが可能になると共に、
補助配線９に対して外光が漏れ込むことを確実に防止す
ることができる。この結果、表示装置における輝度の向
上と消費電力の低下を達成することが可能になる。In this display device, since the light absorbing layer 10 is provided so as to directly cover the auxiliary wiring 9, for example, a polarizing plate or a wave plate is further disposed above the transparent conductive film 14. Compared with the case, the emitted light generated in the organic EL layer 11 can be effectively extracted, and
External light can be reliably prevented from leaking into the auxiliary wiring 9. As a result, it is possible to achieve an improvement in luminance and a reduction in power consumption in the display device.
【００２６】表示装置の製造方法−１ 次に、上述した表示装置の製造方法の一例を、図２，図
３および図４の断面工程図を用いて説明する。尚ここで
説明する製造方法はあくまでも一例であり、この製造方
法によって本発明の表示装置が限定されることはない。[0026] Production Method 1 of the display device Next, an example of a method of manufacturing the above-described display device will be described with reference to cross-sectional process drawing of FIG. 2, 3 and 4. The manufacturing method described here is merely an example, and the display device of the present invention is not limited by this manufacturing method.
【００２７】まず、図２（１）に示すように、基板１上
の各画素に、ＴＦＴ２を配列形成する。そして、このＴ
ＦＴ２を覆う状態で絶縁膜３を形成し、この絶縁膜３に
形成した接続孔（図示省略）を介してＴＦＴ２に接続さ
せた配線４を、絶縁膜３上に形成する。First, as shown in FIG. 2A, TFTs 2 are arrayed in each pixel on the substrate 1. And this T
An insulating film 3 is formed so as to cover the FT 2, and a wiring 4 connected to the TFT 2 via a connection hole (not shown) formed in the insulating film 3 is formed on the insulating film 3.
【００２８】次いで、図２（２）に示すように、この配
線４を覆う状態で、絶縁膜３上に層間絶縁膜５を表面平
坦に形成する。そして、この層間絶縁膜５に、配線４に
達する接続孔６を形成する。Next, as shown in FIG. 2B, an interlayer insulating film 5 is formed on the insulating film 3 to have a flat surface in a state of covering the wiring 4. Then, a connection hole 6 reaching the wiring 4 is formed in the interlayer insulating film 5.
【００２９】次に、図２（３）に示すように、層間絶縁
膜５上に第１電極７を形成する。この場合、上述したよ
うな仕事関数の高い材料からなる陽極膜を、例えばＤＣ
スパッタリング法によって２００ｎｍの膜厚で成膜す
る。成膜条件の一例としては、例えばスパッタガスとし
てＡｒ（アルゴン）を用い、成膜圧力を０．２Ｐａ、Ｄ
Ｃ出力を３００Ｗに設定する。その後、リソグラフィ技
術を用いてこの陽極膜上にレジストパターンを形成し、
これをマスクに用いて陽極膜をエッチング加工すること
で、陽極膜を高精度にパターニングしてなる第１電極７
を得る。このエッチング加工は、ウェットエッチングや
ドライエッチングによって行われる。Next, as shown in FIG. 2C, a first electrode 7 is formed on the interlayer insulating film 5. In this case, the anode film made of a material having a high work function as described above
A film is formed to a thickness of 200 nm by a sputtering method. As an example of film forming conditions, for example, Ar (argon) is used as a sputtering gas,
Set C output to 300W. After that, a resist pattern is formed on this anode film using lithography technology,
Using this as a mask, the anode film is etched to form a first electrode 7 formed by patterning the anode film with high precision.
Get. This etching is performed by wet etching or dry etching.
【００３０】次に、図２（４）に示すように、各画素に
形成された第１電極７の周縁を覆い、第１電極７の表面
のみを露出させる形状の絶縁層８を形成する。この場
合、先ず、例えばＳｉＯ2のような絶縁性材料を、スパ
ッタリングによって６００ｎｍ程度の膜厚で成膜する。
次いで、リソグラフィ技術を用いてこの膜上にレジスト
パターンを形成し、これをマスクに用いたエッチング加
工を行うことで、第１電極７を露出させる開口部８ａを
有する絶縁膜８を得る。このエッチング加工は、例えば
フッ酸とフッ化アンモニウムとの混合水溶液を用いたウ
ェットエッチングやドライエッチングによって行われ
る。Next, as shown in FIG. 2D, an insulating layer 8 is formed which covers the periphery of the first electrode 7 formed in each pixel and exposes only the surface of the first electrode 7. In this case, first, an insulating material such as SiO 2 is formed to a thickness of about 600 nm by sputtering.
Next, a resist pattern is formed on the film by using a lithography technique, and etching is performed using the resist pattern as a mask, whereby an insulating film 8 having an opening 8a exposing the first electrode 7 is obtained. This etching process is performed by, for example, wet etching or dry etching using a mixed aqueous solution of hydrofluoric acid and ammonium fluoride.
【００３１】次に、図３（１）に示すように、絶縁膜８
上に補助電極９を形成する。この場合、先ず、上述した
導電性の高い材料（例えばＡｌ）からなる導電膜を、例
えばＤＣスパッタリング法によって３００ｎｍの膜厚で
成膜する。成膜条件の一例としては、例えばスパッタガ
スとしてＡｒを用い、成膜圧力を０．２Ｐａ、ＤＣ出力
を３００Ｗに設定する。その後、リソグラフィ技術を用
いてこの導電膜上にレジストパターンを形成し、これを
マスクに用いて導電膜をエッチング加工することで、補
助電極９を得る。このエッチング加工は、例えばウェッ
トエッチングによって行われる。この際、導電性材料と
してＡｌを用いる場合には、エッチング液として例えば
大宮化成（株）製「ＡＬ−１」（商品名）が用いられ
る。Next, as shown in FIG.
An auxiliary electrode 9 is formed thereon. In this case, first, a conductive film made of the above-described highly conductive material (for example, Al) is formed to a thickness of 300 nm by, for example, a DC sputtering method. As an example of the film forming conditions, for example, Ar is used as a sputtering gas, the film forming pressure is set to 0.2 Pa, and the DC output is set to 300 W. Thereafter, a resist pattern is formed on the conductive film by using a lithography technique, and the conductive film is etched using the mask as a mask, whereby the auxiliary electrode 9 is obtained. This etching is performed by, for example, wet etching. At this time, when Al is used as the conductive material, for example, "AL-1" (trade name) manufactured by Omiya Kasei Co., Ltd. is used as the etchant.
【００３２】以上のようにして補助電極９を形成した
後、この補助電極９の露出面を覆う状態で光吸収層１０
を形成する。ここで、例えばクロム膜と酸化クロム膜と
の２層構造からなる光吸収層１０を形成する場合、先
ず、クロム膜をＤＣスパッタリング法によって５０ｎｍ
の膜厚で成膜する。成膜条件の一例としては、例えばス
パッタガスとしてＡｒを用い、成膜圧力を０．２Ｐａ、
ＤＣ出力を３００Ｗに設定する。その後、このクロム膜
上に、酸化クロム膜をＤＣスパッタリング法によって１
５０ｎｍの膜厚で成膜する。成膜条件の一例としては、
例えばスパッタガスにＡｒ：Ｏ2＝１：１分圧としたガ
スを用い、成膜圧力を０．３Ｐａ、ＤＣ出力を３００Ｗ
に設定する。After the auxiliary electrode 9 is formed as described above, the light absorbing layer 10 is formed so as to cover the exposed surface of the auxiliary electrode 9.
To form Here, when forming the light absorption layer 10 having a two-layer structure of, for example, a chromium film and a chromium oxide film, first, the chromium film is formed to a thickness of 50 nm by DC sputtering.
Is formed with a film thickness of As an example of the film forming conditions, for example, Ar is used as a sputtering gas, the film forming pressure is 0.2 Pa,
Set DC output to 300W. Thereafter, a chromium oxide film was formed on the chromium film by DC sputtering.
The film is formed with a thickness of 50 nm. As an example of the film forming conditions,
For example, a gas having a partial pressure of Ar: O 2 = 1: 1 is used as a sputtering gas, a film forming pressure is 0.3 Pa, and a DC output is 300 W.
Set to.
【００３３】次いで、リソグラフィ技術を用いてこの酸
化クロム膜上にレジストパターンを形成し、これをマス
クに用いて酸化クロム膜およびクロム膜をエッチング加
工することで、補助電極９の露出面を覆う光吸収層１０
を得る。このエッチング加工は、ウェットエッチングや
ドライエッチングによって行われる。エッチング液とし
て例えば三洋化成工業（株）製「ＥＴＣＨ−１」（商品
名）が用いられる。Next, a resist pattern is formed on the chromium oxide film by using a lithography technique, and the chromium oxide film and the chromium film are etched by using the resist pattern as a mask. Absorption layer 10
Get. This etching is performed by wet etching or dry etching. For example, “ETCH-1” (trade name) manufactured by Sanyo Chemical Industries, Ltd. is used as an etchant.
【００３４】尚、補助電極９の上部のみに光吸収層１０
を設けた構成とする場合には、補助電極材料と光吸収層
材料とを成膜した後、同一のレジストパターンをマスク
に用いてこれらの材料膜をパターンエッチングすること
で、補助電極９と光吸収層１０とのを形成する。このよ
うにした場合、マスクの作製工程を増加させることなく
光吸収層１０を形成することができる。The light absorbing layer 10 is provided only above the auxiliary electrode 9.
In the case where the auxiliary electrode 9 and the light absorbing layer material are formed, the auxiliary electrode 9 and the light absorbing layer are formed by pattern-etching these material films using the same resist pattern as a mask. The absorption layer 10 is formed. In such a case, the light absorption layer 10 can be formed without increasing the number of mask manufacturing steps.
【００３５】次に、図３（２）に示すように、第１電極
７上に、発光層を有する有機ＥＬ層１１を形成する。こ
こでは、真空蒸着装置を用いた成膜を行う。この場合、
基板１上に蒸着マスクＡを載置し、この蒸着マスクＡ上
からの真空蒸着により、次のような手順で有機ＥＬ層１
１を形成する。この際、第１電極７の露出表面のみに正
確に有機ＥＬ層１１をパターン形成することは困難であ
る。このため、絶縁膜８の縁に有機ＥＬ層１１が重な
り、第１電極７の露出表面が確実に有機ＥＬ層１１で覆
われるように、蒸着マスクＡを設計することとする。Next, as shown in FIG. 3B, an organic EL layer 11 having a light emitting layer is formed on the first electrode 7. Here, film formation is performed using a vacuum evaporation apparatus. in this case,
A vapor deposition mask A is placed on the substrate 1, and the organic EL layer 1 is formed by vacuum vapor deposition from the vapor deposition mask A in the following procedure.
Form one. At this time, it is difficult to accurately pattern the organic EL layer 11 only on the exposed surface of the first electrode 7. For this reason, the vapor deposition mask A is designed so that the organic EL layer 11 overlaps the edge of the insulating film 8 and the exposed surface of the first electrode 7 is surely covered with the organic EL layer 11.
【００３６】そしてまず、第１電極７上に、正孔注入層
として４，４’，４”−トリス（３−メチルフェニルフ
ェニルアミノ）トリフェニルアミン（ＭＴＤＡＴＡ）を
３０ｎｍの膜厚で形成し、次いで正孔輸送層としてビス
（Ｎ−ナフチル）−Ｎ−フェニルベンジジン（α−ＮＰ
Ｄ）を２０ｎｍの膜厚で形成し、さらに電子輸送性発光
層として８キノリノールアルミニウム錯体（Ａｌｑ３）
を５０ｎｍの膜厚で形成する。この際、真空蒸着装置の
各抵抗加熱用のボートに、例えば各層材料０．２ｇづつ
を充填する。そして、真空処理室内を１．０×１０-4
Ｐａまで減圧した後、各ボートに順次電圧を印加して加
熱し、連続成膜を行う。First, 4,4 ′, 4 ″ -tris (3-methylphenylphenylamino) triphenylamine (MTDATA) is formed on the first electrode 7 as a hole injection layer to a thickness of 30 nm. Next, bis (N-naphthyl) -N-phenylbenzidine (α-NP) was used as a hole transport layer.
D) is formed to a thickness of 20 nm, and an 8-quinolinol aluminum complex (Alq3) is further formed as an electron transporting light emitting layer.
Is formed with a thickness of 50 nm. At this time, each resistance heating boat of the vacuum evaporation apparatus is filled with, for example, 0.2 g of each layer material. Then, 1.0 × 10 −4 in the vacuum processing chamber.
After the pressure is reduced to Pa, a voltage is sequentially applied to each boat to heat the boat, and a continuous film is formed.
【００３７】以上の後、図４（１）に示すように、基板
１上から蒸着マスク（Ａ）を取り除き、有機ＥＬ層１
１、光吸収層１０で覆われた補助電極９などを覆う状態
で、基板１上の全面に第２電極１２を形成する。ここで
は、マグネシウム−銀からなる第２電極１２を１０ｎｍ
の膜厚で形成することとする。この際、真空蒸着装置を
用い、各抵抗加熱用のボートにマグネシウムを０．１
ｇ、銀を０．４ｇ充填し、真空処理室内を１．０×１０
-4 Ｐａまで減圧した後、各ボートに電圧を印加して加
熱して成膜を行う。これにより、マグネシウムと銀との
成膜速度比を９：１とした成膜を行う。After the above, as shown in FIG. 4A, the deposition mask (A) is removed from the substrate 1 and the organic EL layer 1 is removed.
1. A second electrode 12 is formed on the entire surface of the substrate 1 so as to cover the auxiliary electrode 9 and the like covered with the light absorbing layer 10. Here, the second electrode 12 made of magnesium-silver is 10 nm thick.
It is to be formed with a film thickness of. At this time, using a vacuum evaporation apparatus, 0.1 mg of magnesium was added to each resistance heating boat.
g, 0.4 g of silver, and 1.0 × 10
After reducing the pressure to -4 Pa, a voltage is applied to each boat and heated to form a film. As a result, a film is formed at a film forming speed ratio of 9: 1 between magnesium and silver.
【００３８】次に、図４（２）に示すように、第２電極
１２上の全面に、透明導電膜１４を形成する。この場
合、例えばＤＣスパッタリングによって、室温成膜にお
いて良好な導電性を示すＩｎ−Ｚｎ−Ｏ系の透明導電膜
１４を２００ｎｍの膜厚で形成する。成膜条件の一例と
しては、スパッタガスとしてアルゴンと酸素の混合ガス
（体積比Ａｒ：Ｏ2＝１０００：５）を用い、成膜雰囲
気圧力０．３Ｐａ、ＤＣ出力４０Ｗに設定される。Next, as shown in FIG. 4B, a transparent conductive film 14 is formed on the entire surface of the second electrode 12. In this case, an In-Zn-O-based transparent conductive film 14 having good conductivity at room temperature is formed to a thickness of 200 nm by, for example, DC sputtering. As an example of film forming conditions, a mixed gas of argon and oxygen (volume ratio: Ar: O 2 = 1000: 5) is used as a sputtering gas, and the film forming atmosphere pressure is set to 0.3 Pa and the DC output is set to 40 W.
【００３９】以上のようにして、図１を用いて説明した
表示装置が得られる。また、この透明導電膜１４上に
は、必要に応じて光透過性材料からなる封止膜を設けた
り、さらに光透過性材料からなる対向基板が貼り合わせ
られることとする。As described above, the display device described with reference to FIG. 1 is obtained. In addition, a sealing film made of a light-transmitting material is provided on the transparent conductive film 14 as needed, and a counter substrate made of a light-transmitting material is attached to the sealing film.
【００４０】表示装置の製造方法−２ 次に、図１を用いて説明した表示装置において、光吸収
層１０に樹脂材料膜を用いた場合の製造方法を説明す
る。尚、ここでは、光吸収層１０の成膜工程のみを、図
３（１）を用いて説明するが、その他の手順は製造方法
−１と同様であることとする。Next, a method of manufacturing the display device described with reference to FIG. 1 using a resin material film for the light absorbing layer 10 will be described. Here, only the film forming process of the light absorption layer 10 will be described with reference to FIG. 3A, but the other procedures are the same as those in the manufacturing method-1.
【００４１】ここでは先ず、補助電極９を形成した後、
補助電極９および第１電極７を覆う状態で、基板１上に
ポジ型の感光性ポリイミド膜を成膜する。この感光性ポ
リイミド膜は、例えば黒色顔料が分散されていることと
する。この際、例えば、基板１の回転数を３２００ｒｐ
ｍ程度に設定したスピンコート法による塗布成膜を行
う。そして、成膜後直ちにホットプレート上にて９０
℃、１０分間のプリベーク（露光前ベーク）を行う。
尚、露光前ベーク後における膜厚が、例えば２．４μｍ
程度になるように塗布膜厚が設定されることとする。Here, first, after the auxiliary electrode 9 is formed,
A positive photosensitive polyimide film is formed on the substrate 1 so as to cover the auxiliary electrode 9 and the first electrode 7. This photosensitive polyimide film has, for example, a black pigment dispersed therein. At this time, for example, the rotation speed of the substrate 1 is set to 3200 rpm.
A coating film is formed by a spin coating method set to about m. Immediately after film formation, 90
Pre-bake (pre-exposure bake) is performed at 10 ° C. for 10 minutes.
The film thickness after baking before exposure is, for example, 2.4 μm.
It is assumed that the coating thickness is set so as to be about the same.
【００４２】次に、この感光性ポリイミド膜に対してパ
ターン露光を行う。この際、少なくとも第１電極７上の
全面に対して露光光を照射し、補助電極９上には露光光
が照射されないようにパターン露光を行う。ただし、数
画素に対して１個所の割合で補助電極９上にも露光光を
照射する。Next, pattern exposure is performed on the photosensitive polyimide film. At this time, at least the entire surface of the first electrode 7 is irradiated with exposure light, and the pattern exposure is performed so that the auxiliary electrode 9 is not irradiated with exposure light. However, the exposure light is also applied to the auxiliary electrode 9 at a rate of one for several pixels.
【００４３】以上の後、例えば回転式スプレー洗浄装置
を用いた現像処理を行うことで、未露光部に感光性ポリ
イミド膜を残して露光部の感光性ポリイミド膜を除去す
る。この際、現像液には、ＴＭＡＨ（tetramethylammon
ium hydroxide）の２．３８％水溶液（例えば東京応化
製ＮＭＤ−３）を用い、３分間の現像処理を行うことと
する。これにより、補助電極９を覆うと共に複数画素に
１つの割合で補助電極９に達する接続孔（図示省略）を
備えた光吸収層１０が形成される。この光吸収層１０
は、感光性ポリイミド膜単層で構成される。After the above, the photosensitive polyimide film in the exposed portion is removed while the photosensitive polyimide film is left in the unexposed portion by performing a developing process using, for example, a rotary spray cleaning device. At this time, TMAH (tetramethylammon
Development processing is performed for 3 minutes using a 2.38% aqueous solution of sodium hydroxide (for example, NMD-3 manufactured by Tokyo Ohka). As a result, a light absorbing layer 10 that covers the auxiliary electrode 9 and has a connection hole (not shown) that reaches the auxiliary electrode 9 at a rate of one in a plurality of pixels is formed. This light absorbing layer 10
Is composed of a single layer of a photosensitive polyimide film.
【００４４】次いで、感光性ポリイミド膜のポリイミド
を環化させるため、本焼成をクリーンベーク炉にて行っ
た。この本焼成は窒素雰囲気中で行われることとし、１
７０℃で６０分、その後３５０℃で３０分の２段階の焼
成を行う。尚、露光前ベークにおける感光性ポリイミド
の膜厚が、２．４μｍ程度であった場合、本焼成後にお
ける感光性ポリイミド膜の膜厚は、２．０μｍ程度にな
る。Next, in order to cyclize the polyimide of the photosensitive polyimide film, the main baking was performed in a clean baking furnace. This firing is performed in a nitrogen atmosphere.
Two-stage baking is performed at 70 ° C. for 60 minutes and then at 350 ° C. for 30 minutes. When the thickness of the photosensitive polyimide in the pre-exposure bake is about 2.4 μm, the thickness of the photosensitive polyimide film after the main baking is about 2.0 μm.
【００４５】尚、感光性ポリイミド膜の下地としてクロ
ム膜を設けた光吸収層１０を形成する場合、補助電極９
を覆う状態でクロム膜をパターン形成した後、上述した
手順によって感光性ポリイミド膜をパターン形成する。
または、補助電極材料を成膜した後クロム膜を成膜し、
これらの材料膜を同一のレジストパターンをマスクに用
いてパターンエッチングした後、上述した手順によって
感光性ポリイミド膜をパターン形成しても良い。この場
合、補助電極９の上部のみがクロム膜と感光性ポリイミ
ド膜との積層膜からなり、補助電極９の側面部分が感光
性ポリイミド膜の単層からなる光吸収層１０が形成され
ることになる。When forming the light absorbing layer 10 provided with a chromium film as a base of the photosensitive polyimide film, the auxiliary electrode 9
After patterning a chromium film in a state of covering the substrate, a photosensitive polyimide film is patterned by the above-described procedure.
Alternatively, a chromium film is formed after forming the auxiliary electrode material,
After pattern etching of these material films using the same resist pattern as a mask, a photosensitive polyimide film may be patterned by the above-described procedure. In this case, only the upper part of the auxiliary electrode 9 is formed of a laminated film of a chromium film and a photosensitive polyimide film, and the side part of the auxiliary electrode 9 is formed as a light absorbing layer 10 of a single layer of a photosensitive polyimide film. Become.
【００４６】以上のような手順であっても、図１を用い
て説明した表示装置が得られる。また、この透明導電膜
１４上には、必要に応じて光透過性材料からなる封止膜
を設けたり、さらに光透過性材料からなる対向基板が貼
り合わせられることとする。Even with the above procedure, the display device described with reference to FIG. 1 can be obtained. In addition, a sealing film made of a light-transmitting material is provided on the transparent conductive film 14 as needed, and a counter substrate made of a light-transmitting material is attached to the sealing film.
【００４７】尚、以上の説明においては、本発明をアク
ティブマトリックス型の表示装置に適用した場合を説明
した。しかし本発明の表示装置は、光透過性材料からな
る第２電極に補助電極が接続された表示装置であれば、
単純マトリックス型の表示装置にも適用可能である。こ
の場合であっても、第２電極によって構成される発光素
子間の補助電極の表面に、上述したと同様の光吸収層を
設けることで同様の効果を得ることができる。In the above description, the case where the present invention is applied to an active matrix type display device has been described. However, the display device of the present invention is a display device in which an auxiliary electrode is connected to a second electrode made of a light transmitting material.
The present invention is also applicable to a simple matrix type display device. Even in this case, the same effect can be obtained by providing the same light absorbing layer as described above on the surface of the auxiliary electrode between the light emitting elements constituted by the second electrodes.
【００４８】また、本発明を適用した単純マトリックス
型の表示装置の製造は、従来の補助配線を備えた単純マ
トリックス型の表示装置の製造工程に、図３（１）を用
いて説明した光吸収層の形成工程を加えれば良い。Further, the manufacturing of a simple matrix type display device to which the present invention is applied is similar to the conventional manufacturing process of a simple matrix type display device provided with auxiliary wiring, except that the light absorption described with reference to FIG. A layer forming step may be added.
【００４９】さらに、単純マトリックス型の表示装置で
ある場合、光透過性材料からなる第２電極が発光層より
も基板側に設けられ、発光層で生じた発光光が第２電極
を介して基板側から取り出される透過型であっても、こ
の第２電極に接続された補助電極が設けられた構成であ
れば、この補助電極の第２電極の基板側に向かう表面に
光吸収層を設けることで、同程度の効果を得ることがで
きる。Further, in the case of a display device of a simple matrix type, a second electrode made of a light-transmitting material is provided on the substrate side with respect to the light emitting layer, and light generated in the light emitting layer is transmitted through the second electrode to the substrate. Even if it is a transmission type that is taken out from the side, if the auxiliary electrode connected to the second electrode is provided, a light absorbing layer may be provided on the surface of the auxiliary electrode facing the substrate side. Thus, the same effect can be obtained.
【００５０】[0050]
【発明の効果】以上説明したように本発明の表示装置に
よれば、光透過性材料からなる第２電極側から発光層側
に入射される外光を吸収するための光吸収層を、この第
２電極に接続された補助電極の表面に設けたことで、発
光層で生じた発光光を光透過性材料からなる第２電極側
から取り出して表示する際に、発光素子間に設けられた
補助配線での外光反射を防止することができる。したが
って、発光素子間に補助配線を設けた表示装置における
コントラスト向上を図ることが可能になる。As described above, according to the display device of the present invention, the light absorbing layer for absorbing external light incident on the light emitting layer side from the second electrode side made of a light transmitting material is provided with this light absorbing layer. By providing on the surface of the auxiliary electrode connected to the second electrode, it is provided between the light emitting elements when the light emitted from the light emitting layer is taken out from the second electrode side made of a light transmitting material and displayed. External light reflection on the auxiliary wiring can be prevented. Therefore, it is possible to improve the contrast in the display device in which the auxiliary wiring is provided between the light emitting elements.
【図１】本発明の表示装置の一構成例を示す概略断面図
である。FIG. 1 is a schematic sectional view showing a configuration example of a display device of the present invention.
【図２】図１の表示装置の製造手順を説明するための断
面工程図（その１）である。FIG. 2 is a cross-sectional process diagram (part 1) for describing the procedure for manufacturing the display device of FIG.
【図３】図１の表示装置の製造手順を説明するための断
面工程図（その２）である。FIG. 3 is a sectional process view (part 2) for explaining the manufacturing procedure of the display device in FIG. 1;
【図４】図１の表示装置の製造手順を説明するための断
面工程図（その３）である。FIG. 4 is a sectional process view (part 3) for explaining the manufacturing procedure of the display device in FIG. 1;
１…基板、２…ＴＦＴ、５…層間絶縁膜、７…第１電
極、９…補助電極、１０…光吸収層、１１…有機ＥＬ層
（発光層）、１２…第２電極、１３…発光素子DESCRIPTION OF SYMBOLS 1 ... Substrate, 2 ... TFT, 5 ... Interlayer insulating film, 7 ... First electrode, 9 ... Auxiliary electrode, 10 ... Light absorption layer, 11 ... Organic EL layer (light emitting layer), 12 ... Second electrode, 13 ... Light emission element
フロントページの続き Ｆターム(参考） 3K007 AB05 AB17 BA06 CA01 CB01 CB03 CB04 DA01 DB03 EB00 5C094 AA04 AA06 BA03 BA27 CA19 DA13 DB04 EA04 EA05 EA10 EB02 ED12 FA01 FA02 FB01 FB02 FB12 FB15 GB10 Continued on the front page F term (reference) 3K007 AB05 AB17 BA06 CA01 CB01 CB03 CB04 DA01 DB03 EB00 5C094 AA04 AA06 BA03 BA27 CA19 DA13 DB04 EA04 EA05 EA10 EB02 ED12 FA01 FA02 FB01 FB02 FB12 FB15 GB10
Claims (8)
極との間に発光層を挟持した状態で基板上に配列された
発光素子と、前記第２電極に接続された状態で前記発光
素子間に配置された補助電極とを備えた表示装置におい
て、 前記補助電極の表面が、光吸収層で覆われていることを
特徴とする表示装置。A light-emitting element arranged on a substrate with a light-emitting layer sandwiched between a first electrode and a second electrode made of a light-transmitting material; and a light-emitting element connected to the second electrode. A display device comprising: an auxiliary electrode disposed between light-emitting elements, wherein a surface of the auxiliary electrode is covered with a light absorbing layer.
表示装置。2. The display device according to claim 1, wherein the light absorbing layer is made of a conductive material.
とする表示装置。3. The display device according to claim 1, wherein a chromium oxide film is used as the light absorbing layer.
ム膜を用いたことを特徴とする表示装置。4. The display device according to claim 3, wherein the light absorbing layer uses a chromium film as a base layer of the chromium oxide film.
する表示装置。5. The display device according to claim 1, wherein a resin material film is used as the light absorbing layer.
膜を用いたことを特徴とする表示装置。6. The display device according to claim 5, wherein the light absorbing layer uses a chromium film as a base layer of the resin material film.
れた接続孔において接続されていることを特徴とする表
示装置。7. The display device according to claim 5, wherein the second electrode and the auxiliary electrode are connected through a connection hole formed in the resin material film.
に接続する状態で設けられていることを特徴とする表示
装置。8. The display device according to claim 1, wherein the first electrode is provided so as to be connected to a transistor formed on the substrate.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001153327A JP2002352963A (en) | 2001-05-23 | 2001-05-23 | Display device |
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|---|---|
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