CN101242692B - Light emitting device - Google Patents

Light emitting device Download PDF

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Publication number
CN101242692B
CN101242692B CN2008100058115A CN200810005811A CN101242692B CN 101242692 B CN101242692 B CN 101242692B CN 2008100058115 A CN2008100058115 A CN 2008100058115A CN 200810005811 A CN200810005811 A CN 200810005811A CN 101242692 B CN101242692 B CN 101242692B
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electrode
light
auxiliary electrode
emitting device
effective coverage
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CN101242692A (en
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洼田岳彦
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Lumitec Display Technology Co ltd
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Seiko Epson Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/824—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

A light emitting device (1) is provided, wherein a second layer insulating film (35), an auxiliary electrode (150), and a common electrode (72) are orderly cascaded on an element layer (30). An end (E4) of the auxiliary electrode (150) is formed on the position more outside of the surface of a substrate (10) of an end (E1) of the common electrode (72). The end (E1) of the common electrode (72) is formed on the position more inside of the end (E2) of the second layer insulating film (35). The auxiliary electrode (150) has a portion electrically connected and superposed with an power line providing the second electrode for the common electrode (72), which reduces a forehead edge region of the light emitting device and inhibits brightness derivation of the light emitting device.

Description

Light-emitting device
Technical field
The present invention relates to use the light-emitting device of light-emitting components such as organic EL (Electroluminescence) element.
Background technology
Known a kind of light-emitting device, its effective coverage on substrate disposes a plurality of light-emitting components, disposes various distributions etc. in the neighboring area around the effective coverage.Each light-emitting component has the luminescent layer that is clipped between first electrode and second electrode, forms with luminescent materials such as organic EL Materials.Under most occasions, this second electrode is common at a plurality of light-emitting components and public electrode that be provided with is provided with across described effective coverage.But the impedance that has owing to electrode self makes that generation voltage descends in electrode surface, and the current potential that supplies to light-emitting component may produce because of the position on substrate is different and disperse, so the brightness of light-emitting component may produce discrete because of the position difference.So, all the time, be provided with use than the more low-impedance material of public electrode form and and the auxiliary electrode that is electrically connected of public electrode, reduce the impedance (for example, patent documentation 1) of public electrode thus.
Patent documentation 1: the spy opens the 2002-352963 communique
But auxiliary electrode for example in most cases forms with the light-proofness member of aluminium etc.Therefore, ideal is that the mode with the gap area by light-emitting component forms, so that the light that comes self-emission device to penetrate can not be blocked, it is desirable to adopt high-precision position registration mechanism and forms.Relative therewith, public electrode forms with the material of photopermeability, and the zones whole with covering the effective coverage form equally.Thus and auxiliary electrode relatively, the error during the allowable position is aimed at.Thus, compare with auxiliary electrode, the position alignment error of public electrode becomes problem.Therefore, it is desirable to fully guarantee in the mode of the error that can absorb public electrode the width (so-called " margo frontalis zone ") in substrate upper periphery zone, this point has become the obstruction of equipment miniaturization.
In addition, the luminous circuit components such as transistor that are used to control light-emitting component are disposed at the lower floor of public electrode and auxiliary electrode.Therefore, between public electrode and auxiliary electrode, be provided with insulation course, so that public electrode and auxiliary electrode insulate from circuit component.But, when insulation course contains step, on electrode, may produce broken string or be full of cracks in top section with this step coincidence.Because the resistance value at the position electrode that produces broken string and be full of cracks increases, so the uneven luminance of light-emitting component is more obvious.
Summary of the invention
The present invention proposes in view of above-mentioned thing, with the light-emitting device of the uneven luminance that a kind of margo frontalis zone that can dwindle light-emitting device is provided and can suppresses light-emitting component as solving problem.
For solving above-mentioned problem, first light-emitting device of the present invention, on substrate, have effective coverage that is arranged with a plurality of light-emitting components and the neighboring area that centers on this effective coverage, described each light-emitting component has first electrode, second electrode and is positioned between the two luminescent layer, the described a plurality of light-emitting components of described second electrode pair commonly are provided with, also have and dispose the element layer that is used to control the luminous circuit component of described light-emitting component, wherein, have: auxiliary electrode, it is electrically connected with described second electrode; Insulation course, it is disposed at the upper strata of described element layer, and has the part that is disposed at than described second electrode and the more close lower floor of described auxiliary electrode, be used for described second electrode and described auxiliary electrode are insulated from described circuit component, described second electrode, cover described effective coverage, expose and formation similarly in described neighboring area, described auxiliary electrode, pass through the gap of described a plurality of light-emitting components in described effective coverage, be formed at the part of described neighboring area, in described neighboring area, become maximum position than the site error of the described auxiliary electrode distolateral mode that becomes maximum more close inboard, position at described substrate with the site error of described second electrode described substrate distolateral, the position that does not have error of setting the end of the end of described second electrode and described auxiliary electrode is the reference position.
In light-emitting device of the present invention, the end of auxiliary electrode is disposed at the position more in the outer part, end than public electrode.In addition, auxiliary electrode forms in the mode of the gap area by light-emitting component in the effective coverage.Therefore, it is desirable to adopt high-precision position registration mechanism and form.In contrast, public electrode is similarly covering the whole zone formation in effective coverage, so when forming public electrode, and do not require the position alignment precision that auxiliary electrode is such.That is, in most cases auxiliary electrode forms with the error littler than public electrode.Thus,, be disposed at than the end formation more in the outer part of auxiliary cathode with end and compare, can dwindle the margo frontalis zone, miniaturization that can implement device corresponding to the error of auxiliary electrode with public electrode according to the present invention.And auxiliary electrode constitutes in the low mode of its impedance ratio second electrode.Especially, preferably use than the more low-impedance material of second electrode and form.
In addition, in light-emitting device of the present invention, the end of public electrode is disposed at than position more in the inner part, insulation course end.Insulation course for example is a circuit step planarization film, and is in order to make the convex-concave planarization of lower floor, thicker mostly and form film.Thus, the insulation course end becomes big step.In contrast, public electrode is many to be formed with fragile materials, and forms than unfertile land, therefore, because the influence of the step of insulation course end produces broken string or be full of cracks sometimes on public electrode.But in the present invention, the end of public electrode is disposed at the position more in the inner part, end than insulation course, therefore can prevent the broken string or the be full of cracks of public electrode.Thus, the increase of broken string and the resistance value that causes of be full of cracks can be prevented trouble before it happens.The uneven luminance that therefore, can suppress light-emitting component.In suitable manner of the present invention, the described second electrode preferred disposition is in the lower floor of described auxiliary electrode.According to this mode, can protect second area to avoid outer gas influence.
In addition, second light-emitting device of the present invention has the effective coverage that is arranged with a plurality of light-emitting components and around the neighboring area of this effective coverage, wherein, possesses on substrate: a plurality of first electrodes, and it is corresponding with each of described a plurality of light-emitting components and be provided with; Second electrode, it commonly is provided with described a plurality of light-emitting components; Luminescent layer, it is between between described a plurality of first electrodes and described second electrode; Auxiliary electrode, it is electrically connected with described second electrode; Element layer, it disposes the luminous circuit component that is used to control described light-emitting component; Insulation course, it makes between described second electrode or described auxiliary electrode and the described element layer and insulate, described second electrode is arranged at the first area of at least a portion that comprises all and described neighboring area, described effective coverage, the described first area of all neutralizations overlaps described insulation course in described effective coverage, be arranged at the second area that more extends than described first area to first direction in described neighboring area, described auxiliary electrode, mode in described effective coverage with the gap by described a plurality of light-emitting components is provided with, and in described neighboring area, with by the inboard of described first area with as the outside of described first area and as the area inside of described second area, the mode that arrives the outside of described second area is provided with.
In above-mentioned second light-emitting device, auxiliary electrode is arranged at than zone more in the outer part, the first area that public electrode is set.Thus, the end of auxiliary electrode is disposed at the position more in the outer part than the end of public electrode.In addition, auxiliary electrode forms in the mode of the gap area by light-emitting component in the effective coverage, adopts high-precision position registration mechanism in the formation of auxiliary electrode.In contrast, public electrode similarly forms in covering whole zone, effective coverage, therefore, when public electrode forms, and does not require the position alignment precision that auxiliary electrode is such.Thus, the error ratio public electrode of auxiliary electrode littler, therefore, according to the present invention, be disposed at than the end formation more in the outer part of auxiliary cathode with end and compare, can dwindle the margo frontalis zone, miniaturization that can implement device according to the error of auxiliary electrode with public electrode.
In addition, in the second above-mentioned light-emitting device, the first area that is provided with public electrode is disposed at than the second area that insulation course is set position more in the inner part.Thus, in insulation course end and public electrode superposed part, the increase of the resistance value that the broken string in the public electrode and be full of cracks can be caused prevents trouble before it happens.The uneven luminance that therefore, can suppress light-emitting component.
In the suitable manner of above-mentioned second light-emitting device, described a plurality of light-emitting component is arranged in rectangular, described auxiliary electrode, have by described a plurality of light-emitting components the gap and to be arranged to a plurality of individual electrode of striated along first direction from the mode in inboard to the outside of described effective coverage.Preferably, described auxiliary electrode also has in described neighboring area that the interconnective connection electrode of described a plurality of individual electrode is also passable.In this case, to dispose described connection electrode also passable for the mode that overlaps with the end and the described connection electrode of the described first direction of described insulation course.
In other embodiment of above-mentioned second light-emitting device, described a plurality of light-emitting component is arranged in rectangular, described auxiliary electrode, be with the gap by described a plurality of light-emitting components and from the mode in inboard to the outside of described second area of described effective coverage, be arranged to a plurality of individual electrode of strip along first direction.
In addition, about above-mentioned second light-emitting device, in above-mentioned arbitrary mode, second electrode that is used to supply with described second electrode potential is arranged at described neighboring area with power lead in the mode of reporting to the leadship after accomplishing a task with described first direction, and described second electrode is electrically connected with power lead and described auxiliary electrode.In this case, preferably, described second electrode also can be arranged at the outside of described first area with power lead.
In addition, have the electronic equipment of first or second light-emitting device of above-mentioned arbitrary mode, the present invention also can hold.According to this electronic equipment, can reach above-mentioned each effect.
Description of drawings
Fig. 1 (A) is the general view of a part of the formation of the related light-emitting device of expression the 1st embodiment of the present invention, (B) is to be illustrated in the planimetric map that has further formed the state of auxiliary electrode and pixel electrode behind the state of (A).
Fig. 2 is the detail circuits figure of the image element circuit of this device of expression.
Fig. 3 is the enlarged drawing of the part of Fig. 1 (B).
Fig. 4 is the fragmentary cross-sectional view of this device.
Fig. 5 is the simple sectional view of the part of this device.
Fig. 6 is illustrated in the figure that produces the appearance of be full of cracks in the comparative example on public electrode.
The fragmentary cross-sectional view of the light-emitting device that the related variation of Fig. 7 the 1st embodiment is related.
Fig. 8 is the fragmentary cross-sectional view of the related light-emitting device of the 2nd embodiment of the present invention.
Fig. 9 is the simple sectional view of the part of this device.
Figure 10 is the simple sectional view of part of the related light-emitting device of variation of the present invention.
Figure 11 is the simple sectional view of part of the related light-emitting device of variation of the present invention.
Figure 12 is the summary of the layout of the related light-emitting device of variation of the present invention.
Figure 13 is the summary of the layout of the related light-emitting device of variation of the present invention.
Figure 14 is the stereographic map of formation that the mobile personal computing machine of light-emitting device has been adopted in expression.
Figure 15 is the stereographic map of formation that the portable telephone of light-emitting device has been used in expression.
Figure 16 is the stereographic map of formation that the portable information terminal of light-emitting device has been used in expression.
Among the figure: 1; 1A; 1C; 1D; 2A; 3A; 3B; 4A; the 4B-light-emitting device, 10-substrate, 70-light-emitting component; 34-circuit protection film, 35-second interlayer dielectric (insulation course), 37-next door; the 37a-peristome, 65-moisture resistance compaction material, 72-public electrode (second electrode); the 74-light emitting functional layer, 76-pixel electrode (first electrode), 80-diaphragm seal; the 90-seal, 100A; the 100B-scan line drive circuit, the 110-counter substrate; the 111-sweep trace, 112-data line, 113-power supply supply line; the 120-pre-charge circuit; the 140-second electrode power lead, 150-auxiliary electrode, 150c; the 150e-individual electrode; the 150d-connection electrode; 200; 200A; the 200B-data line drive circuit, A-effective coverage, B-neighboring area; C; the F-zone; E1～E5-end, G～signal input terminal, P～unit circuit.
Embodiment
Below, with reference to the description of drawings embodiments of the present invention.In addition, in the accompanying drawings, the dimension scale of each one with actual have suitable different.
A-1: the 1st embodiment
Fig. 1 (A) is the general view of a part of the formation of the related light-emitting device 1 of expression the 1st embodiment of the present invention, and Fig. 1 (B) is illustrated in the planimetric map that has further formed the state of auxiliary electrode 150 and pixel electrode 76 behind the state of Fig. 1 (A).Shown in Fig. 1 (A), this light-emitting device 1 possesses substrate 10 and flexible substrate 20.End at substrate 10 is formed with splicing ear, and this splicing ear and the splicing ear that is formed at flexible substrate 20 are called as ACF (anisotropic conductive film: the cementing agent crimping of the film like of conducting particles anisotropic conductive film) is fixed by containing.In addition, flexible substrate 20 is provided with data line drive circuit 200, and in addition, various supply voltages are fed into substrate 10 by flexible substrate 20.
Substrate 10 is provided with the neighboring area B in effective coverage A and its outside (being between the periphery and effective coverage A of substrate or substrate 10).Be formed with scan line drive circuit 100A and 100B and pre-charge circuit 120 at neighboring area B.Pre-charge circuit 120 is to be used for before write activity the potential setting of data line 112 circuit for the current potential of regulation.Scan line drive circuit 100A and 100B and pre-charge circuit 120 are the peripheral circuits that are in the periphery of effective coverage A.But peripheral circuit also can contain the whether good check circuit (not shown) of inspection unit circuit P and distribution, and data line drive circuit 200 also can be the peripheral circuit that is arranged at neighboring area B.
Be formed with multi-strip scanning line 111 and many data lines 112 at effective coverage A, they the point of crossing separately near be provided with a plurality of unit circuits (image element circuit) P.Unit circuit P contains OLED (organic light emitting diode) element, accepts to give from electric current supplying wire 113.Many electric current supplying wire 113 is connected with power lead 130 with first electrode.
Fig. 2 is the detail circuits figure of the unit circuit P of expression light-emitting device 1.Constituent parts circuit P comprises: n channel transistor 68, p channel transistor 60, capacity cell 69 and light-emitting component (OLED element) 70.The source electrode of p channel transistor 60 is connected with electric current supplying wire 113, and on the other hand, its drain electrode is connected with the anode of light-emitting component 70.In addition, between the source of transistor 60 electrode and gate electrode, be provided with capacity cell 69.The gate electrode of n channel transistor 68 is connected with sweep trace 111, and its source electrode is connected with data line 112, and its drain electrode is connected with the gate electrode of transistor 60.
With regard to unit circuit P, when scan line drive circuit 100A and 100B select with this unit circuit P corresponding scanning line 111, transistor 68 conductings will remain in inner capacity cell 69 by the data-signal that data line 112 is supplied with.And, transistor 60 will with the corresponding current supply of data signal levels to light-emitting component 70.Thus, light-emitting component 70 is with luminous with the corresponding brightness of data signal levels.
In addition, shown in Fig. 1 (A), be formed with second electrode power lead 140 of Japanese " コ " word shape in the peripheral part side (being between the periphery and neighboring area B of substrate or substrate 10) of neighboring area B.Second electrode is with power lead 140, as described later for being used for negative electrode (second electrode) supply line voltage (Vss in this embodiment: distribution ground level) to light-emitting component.In addition, replace second electrode is adapted to Japanese " コ " word shape (promptly, along three limits of substrate 10) with power lead 140, also second electrode can be arranged to along the form on the both sides that substrate 10 is faced mutually with power lead 140.That is, in illustrated example, also can set along each scan line drive circuit 100A and 100B.
Light-emitting component 70 has the light emitting functional layer (containing luminescent layer) 74 (with reference to Fig. 4) that is clipped between pixel electrode 76 (anode) and public electrode 72 (negative electrode).Public electrode 72 forms the zone (first area) of a part of crossing over effective coverage A integral body and neighboring area B shown in Fig. 1 (B).In addition, the connection public electrode 72 and second electrode form in the mode that covers peripheral circuit in the B of neighboring area with the auxiliary electrode 150 of power lead 140.Auxiliary electrode 150 comprises the 150a of first of the auxiliary electrode that is arranged at effective coverage A and is arranged at the second portion 150b of the auxiliary electrode of neighboring area B.The 150a of first of auxiliary electrode 150 forms clathrate, so that the 150a of first of auxiliary electrode 150 does not contact with pixel electrode 76 in the A of effective coverage.That is the 150a of first that auxiliary electrode 150, is arranged in the gap configuration of light-emitting component 70.Said in this manual auxiliary electrode is to overlap and be electrically connected with public electrode 72, so that the conductor that the resistance of public electrode 72 reduces.In order to make clear, the part of Fig. 1 (B) is amplified and to be shown in Fig. 3.
The light-emitting device 1 that this embodiment is related constitutes with the form of top emission, penetrates by public electrode 72 from the light of light emitting functional layer 74.Public electrode 72 is formed by transparent material.Therefore, not on business common electrode 72 neighboring area B is carried out shading.On the other hand, in above-mentioned auxiliary electrode 150,, utilize the auxiliary electrode 150 can shading because used metal with electric conductivity and light-proofness.Thus, can suppress light and produce photocurrent to peripheral circuit incident.In addition, auxiliary electrode 150 can form by the pixel electrode 76 same technologies with effective coverage A.Therefore, need be for special technology to the additional light-proofness in neighboring area.
Fig. 4 represents the fragmentary cross-sectional view of light-emitting device 1.In the figure, in the A of effective coverage, be formed with light-emitting component 70, on the other hand, be formed with scan line drive circuit 100A as peripheral circuit at neighboring area B.In Fig. 4, the upper surface of light-emitting device 1 becomes the outgoing plane that penetrates light.As shown in the drawing, on substrate 10, be formed with substrate protective seam 31, be formed with transistor 40,50 and 60 thereon.Transistor 40 is that n channel-type, transistor 50 and 60 are p channel-types.Transistor the 40, the 50th, the part of scan line drive circuit 100A, transistor 60 and light-emitting component 70 are parts of unit circuit P.
Transistor 40,50 and 60 is arranged on the substrate protective seam 31 based on the monox on the surface that is formed at substrate 10.Be formed with silicon layer 401,501 and 601 on the upper strata of substrate protective seam 31.Gate insulation layer 32 is arranged at the upper strata of substrate protective seam 31 in the mode that covers silicon layer 401,501 and 601.Gate insulation layer 32 is for example formed by monox.With above the gate insulation layer 32 in the part faced mutually of silicon layer 401,501 and 601 be provided with gate electrode 42,52 and 62.In transistor 40, in silicon layer 401, mix V group element, form drain region 40c and source region 40a by gate electrode 42.At this, the zone of not mixing V group element becomes channel region 40b.
In transistor 50 and 60, via gate electrode 52 and 62, in silicon layer 501 and 601, mix iii group element, form drain region 50a and 60a and source region 50c and 60c via gate electrode 52 and 62.At this, the zone of not mixing iii group element becomes channel region 50b and 60b.In addition, in the gate electrode 42,52 and 62 that forms transistor 40,50 and 60, form sweep trace 111.
First interlayer insulating film 33 is formed at the upper strata of gate insulation layer 32 in the mode of cover gate electrode 42,52 and 62.The material of first interlayer insulating film 33 uses monox etc.In addition, source electrode 41,51 and 63, drain-source electrode 43 and drain electrode 61 are crossed over gate insulation layers 32 and first interlayer insulating film 33 and the contact hole (コ Application タ Network ト ホ one Le) by perforate is connected with silicon layer 401,501 and 601.In addition, with forming second electrode power lead 140, data line 112 and electric current supplying wire 113 with the same technology of these electrodes.These electrodes and second electrode form with the materials such as aluminium that usefulness such as power lead 140 have electric conductivity.
Circuit protection film 34 is to cover source electrode 41,51 and 63, drain-source electrode 43, drain electrode 61 and second electrode are arranged at first interlayer insulating film 33 with the mode of power lead 140 upper strata.Circuit protection film 34 is for example formed by silicon nitride and the silicon oxynitride low materials of gas permeation rate such as (stopping up of acid Gui).In addition, these silicon nitrides and silicon oxynitride also can be the noncrystalline materials, also can contain protium.Can prevent disengaging by circuit protection film 34 from the protium of transistor 40,50 and 60.In addition, also can be below source electrode and drain electrode formation circuit protection film 34.
Second interlayer dielectric 35 is arranged at the upper strata of circuit protection film 34.At this, second interlayer dielectric 35, be arranged at source electrode 41,51 and 63, drain-source electrode 43, drain electrode 61 and second electrode with between power lead 140 and pixel electrode described later 76, auxiliary electrode 150 or the public electrode 72, to play effect with they insulation.At this moment, the mode that can not delay with the signal that supplies to sweep trace and signal wire is set thickness.In addition,, be preferably, make concavo-convex with the upper surface of circuit protection film 34 opposition sides about second interlayer dielectric 35, than with circuit protection film 34 face mutually following concavo-convex littler.That is, in order to make the concavo-convex planarization that produces because of transistor 40,50,60, sweep trace 111, data line 112, electric current supplying wire 113 etc., and use second interlayer dielectric 35.This second interlayer dielectric 35 overlaps at whole effective coverage A and above-mentioned first area (forming the zone of public electrode 72), is arranged on the second area that more stretches out to first direction than the first area at neighboring area B.Specifically, in the present embodiment, in 4 limits of substrate 10, set second electrode the right and left and this at least three avris of top with power lead 140, second area than the first area to more outstanding by the lateral direction in the face of substrate 10.
In the material of second interlayer dielectric 35, for example, can use the high-molecular organic material of acrylic acid (ア Network リ Le) class, poly-(acyl) imido (Port リ イ ミ De) class.In this case, also can be mixed for the photosensitive material of patterning in organic resin, patterning is carried out in usefulness and the same exposure of photoresist.Perhaps, also can form second interlayer dielectric 35 by chemical vapor deposition method (chemical vapor deposition:CVD), and make its upper surface planarization by corroding etc. by inorganic material such as monox, silicon oxynitrides.Inorganic material, when forming film by the chemical vapor deposition method, its thickness and roughly is the same below 1 μ m, and its upper surface is subjected to concavo-convex this situation that influences of lower floor easily.Relative therewith, organic resin is owing to form by coating (コ one テ イ Application ダ), thereby its thickness can be greatly to 2～3 μ m degree, and its upper surface is difficult to be subjected to the concavo-convex influence of lower floor, so is suitable for the material of second interlayer dielectric 35.Especially, if certain degree of permission is concavo-convex, inorganic material such as monox, silicon oxynitride can be applied to second interlayer dielectric 35.As mentioned above, because second interlayer dielectric 35 so needs the regulation thickness, therefore form step sometimes in the neighboring area.
On second interlayer dielectric 35, in the A of effective coverage, form in the 150a of first of pixel electrode 76 (first electrode) and auxiliary electrode, form the second portion 150b of auxiliary electrode in the neighboring area.That is, pixel electrode 76 and auxiliary electrode 150 are at same one deck, form simultaneously with same material.Pixel electrode 76 in this embodiment is anodes of light-emitting component 70, and each light-emitting component 70 is separated from each other and forms, and is connected by connecting second interlayer dielectric 35 and the contact hole of circuit protection film 34 and the drain electrode 61 of transistor 60.In addition, be the material of pixel electrode 76 as anode, it is desirable to merit (bodyguard thing) material that function is big, for example, nickel, gold, platinum (platinum) etc. or their alloy are more suitable.Because these materials have reflectivity, therefore make the light that sends by light emitting functional layer 74 reflect towards public electrode 72.In this case, auxiliary electrode 150 is also formed by these materials.
In addition, as pixel electrode 76, its formation also can contain: the ground floor that possesses light light transmission, electric conductivity that is made of the oxidation conductive material of the high ITO of work function (indiumtin oxide), IZO (indium zinc oxide) or ZnO2 and so on; With by reflective metal, the second layer that for example constitutes by aluminium.The formation that ground floor is set at the light emitting functional layer side is also passable.In this case, auxiliary electrode 150 also can have ground floor and the second layer is two-layer, also can have the arbitrary layer in them.
Auxiliary electrode 150 forms clathrate (150a of first) in the mode in the gap by a plurality of light-emitting components 70 in the A of effective coverage, in the neighboring area, be formed with the second area of second interlayer dielectric 35, one side of more stretching out than the first area that is formed with public electrode 72 (in the present embodiment for the right and left of substrate 10 and go up avris) is to form (second portion 150b) by the inboard of first area with as the outside of first area and as the mode that the area inside of second area arrives the second area outside.Auxiliary electrode 150 is connected with power lead 140 with second electrode by the contact hole that is formed at circuit protection film 34 at neighboring area B.As shown in the figure, with on the power lead 140, do not form second interlayer dielectric 35, only on circuit protection film 34, form contact hole, the second portion 150b of auxiliary electrode 150 is directly contacted with power lead 140 with second electrode at second electrode.
Then, form next door 37.Therefore next door 37, has peristome 37a so that the outline edge of each pixel electrode 76 is formed by the mode that next door 37 covers.And each integral body of peristome 37a all overlaps with pixel electrode 76, and in the stage before forming light emitting functional layer 74, pixel electrode 76 exposes by peristome 37a.Next door 37, with pixel electrode 76 and between the public electrode 72 (second electrode) that forms thereafter or a plurality of pixel electrode 76 insulate each other.Can independently control each pixel electrode 76 by next door 37 is set, can make a plurality of light-emitting components luminous with the brightness of stipulating separately.That is, a plurality of light-emitting components are distinguished in next door 37.For example, acrylic acid or poly-imido etc. are the insulativity materials in next door 37.In this case, also can be mixed for the photosensitive material of patterning, design producing is carried out in usefulness and the same exposure of photoresist.Form contact hole CH on the next door 37 simultaneously.In the A of effective coverage, the 150a of first of auxiliary electrode 150 is connected with public electrode 72 described later by this contact hole CH.In addition, on the second portion 150b of the auxiliary electrode 150 of neighboring area B, the layer same with next door 37 is not set.
Then, on pixel electrode 76, form the light emitting functional layer 74 that contains luminescent layer at least.Luminescent layer can use organic EL material.Organic EL material can be low molecular material, also can be macromolecular material.Other layer as constituting light emitting functional layer 74 also can possess: hole input horizon, hole transfer layer, electron supplying layer, electron injecting layer, hole stop that (Block ロ Star Network) layer and electronics stop part or all of (Block ロ Star Network) layer.
Then, form public electrode 72 (second electrode) in mode across effective coverage A and neighboring area B and covering auxiliary electrode 150 and light emitting functional layer 74.Public electrode 72 has light transmission, comes the direction of light transmission public electrode 72 upside in figure of self-emission device 70 to penetrate.Owing to making this embodiment related public electrode 72 bring into play function as the negative electrode of all light-emitting components 70, so the low material of public electrode 72 usefulness work functions forms, so that electronics injects easily.For example, aluminium, calcium (カ Le シ ウ system), magnesium (マ ダ ネ シ ウ system) or lithium (リ チ ウ system) etc. and their alloy.In addition, it is desirable to the material that this alloy uses the low material of work function and can make this material settling outization.For example, the alloy of magnesium and silver is fit to.These metal or alloy are being used under the situation of public electrode 72, in order to obtain light transmission, as long as reduce thickness.
In addition, the formation of public electrode 72 (second electrode) also can be to contain: by the low material of above-mentioned work function, or by low material of work function and ground floor that the material of this material settling outization is constituted; The second layer that possesses light light transmission, electric conductivity that the such oxidation conductive material of ITO (indium tin oxide), IZO (indium zinc oxide) or ZnO2 constitutes, and ground floor is set at the light emitting functional layer side.Oxidation conductive material as ITO, IZO or ZnO2 is fine and close material, and gas permeation rate is low.If form public electrode 72 with such material; because public electrode 72 is across effective coverage A and neighboring area B and form; therefore the peripheral circuit of the unit circuit P of effective coverage A and neighboring area B is protected and avoid outer gas and influence, thereby, can suppress their deterioration.So, if public electrode 72 (second electrode) is the formation that comprises the above-mentioned second layer, owing to compare its light light transmission, excellent electric conductivity with the material that constitutes ground floor, therefore the source impedance of public electrode 72 is significantly reduced, and, can improve light output efficiency from light emitting functional layer.In addition, public electrode 72 (second electrode) is because with containing by low material of work function and ground floor that the material of this material settling outization is constituted, constitute with the second layer that constitutes by above-mentioned oxidation conductive material, therefore, the reaction of the ground floor and the second layer can be prevented, the deterioration of electron injection efficiency can be prevented.
In addition, before forming public electrode 72, be formed with contact hole CH on the next door 37.By this contact hole CH, the 150a of first of auxiliary electrode is connected with public electrode 72 in the A of effective coverage.Because public electrode 72 is connected with the 150a of first (with reference to Fig. 1 (B)) that forms cancellate auxiliary electrode in the A of effective coverage, and the source impedance of public electrode 72 is significantly reduced.In addition, the second portion 150b of auxiliary electrode covers and contacts with large tracts of land with public electrode 72 in neighboring area B next door 37 of no use, therefore can reduce the connection impedance.Therefore, source impedance is significantly reduced.
Then, form diaphragm seal 80 in the mode that covers public electrode 72 and auxiliary electrode 150.Diaphragm seal 80 can use the low inorganic material of gas permeation rate such as the good silicon oxynitride of transparency height for example, moisture resistance, monox.Sealing film 80 covers all regional of peripheral circuit (scan line drive circuit 100A, 100B and pre-charge circuit 120 with transistor 40,50).But, do not form diaphragm seal 80 at the outward flange of substrate 10, in this outer end edges, seal 90 is bonded on the circuit protection film 34, and engaging at an upper portion thereof has transparent sealing substrate (counter substrate) 110.Seal 90 for example also can be a cementing agent, also can keep the pad of counter substrate 110 to engage with cementing agent with being used to.
Fig. 5 is the simple sectional view of the zone C among Fig. 4.That is, liken sectional view among the B of neighboring area to into the end in transistor 40, the 50 more close outsides of the part of scan line drive circuit 100.Be the convenience of explanation, with substrate protective seam 31 shown in Figure 4, gate insulation layer 32, first interlayer insulating film 33, circuit protection film 34 and be clipped in the transistor 40,50 of their each interlayers and 60 each electrode are concentrated as element layer 30 and are shown among Fig. 5.Upper layer part in this element layer 30 is formed with second electrode power lead 140, and as mentioned above, second electrode is brought into play function with the upper surface conduct of power lead 140 and the contact area of upper electrode.In Fig. 4, except that element layer 30 and second electrode usefulness power lead 140, expression has second interlayer dielectric 35, auxiliary electrode 150, public electrode 72, diaphragm seal 80, seal 90 and counter substrate 110.Below, with reference to this figure, be elaborated with regard to the relative position aligned relationship of each layer.
In addition, as mentioned above, using second interlayer dielectric 35 is concavo-convex planarizations for the transistor that is disposed at lower floor and distribution etc. are produced.And, the formation such as insulativity high-molecular organic material of second interlayer dielectric, 35 usefulness acrylic compounds, poly-imido class also have the function that the electrode autogamy of anode 76, public electrode 72, auxiliary electrode 150 etc. is placed circuit components such as transistor 40,50,60 insulation in the element layer 30.That is, as making each electrode bring into play function with the insulation course of the luminous circuit component insulation that is used to control light-emitting component.
As shown in Figure 5, contain end E2 that the upper strata of second electrode with the element layer 30 of power lead 140 form second interlayer dielectric, 35, the second interlayer dielectrics 35 than second electrode with the end E3 of the inboard of the contact area of power lead 140 more in the inner part.Zone and the contact area of end E2 that is clipped in second interlayer dielectric 35 in the upper surface of the upper surface of second interlayer dielectric 35, element layer 30 and end E3 form the second portion 150b (below, only be called " auxiliary electrode ") of auxiliary electrode 150.Thus, the auxiliary electrode 150 and second electrode join with power lead 140 and overlap and power lead 140 electrical connections of second electrode.In illustrated example, the end E4 of auxiliary electrode 150 and the outboard end of contact area are consistent, and still, not necessarily consistent, auxiliary electrode 150 forms also passable in the mode that covers contact area.That is, its to constitute also can be that the end E4 of auxiliary electrode is positioned at than the more close outer fix of the outboard end of contact area.
In addition, in this manual, so-called " inboard ", " outside " expression with the end E5 of substrate 10 phase position in the real estate during as benchmark aim at and put.Thus, for example, so-called " end E1 holds E2 more in the inner part than (summary) ", the distance of the end E5 of expression end E1 and substrate 10 is than end E2 and hold the distance of E5 longer.
Formation public electrode 72 on auxiliary electrode 150.The end E1 of public electrode 72 forms in the mode that is positioned at than the end E2 position more in the inner part of second interlayer dielectric 35.In addition, the extreme E4 of auxiliary electrical constitutes in the mode that is positioned at than the position in the more close outside of end E1 of public electrode 72.In addition, as mentioned above, auxiliary electrode 150 and pixel electrode 76 form simultaneously, then, form next door 37, light emitting functional layer 74 successively after, to cover the mode of next door 37 and light emitting functional layer 74, form public electrode 72.
As mentioned above, on auxiliary electrode 150, can use metal with electric conductivity and light-proofness.Therefore, in the mode that auxiliary electrode 150 and the pixel electrode 76 of effective coverage A do not overlap, form the 150a of first of auxiliary electrode 150 with clathrate.That is,,, only in the gap of light-emitting component 70, dispose the 150a of first of auxiliary electrode 150 in the mode of the ejaculation light that do not interdict self-emission device 70 at effective coverage A.Light-emitting component 70 is mutually with small arranged spaced, therefore, it is desirable to auxiliary electrode 150 and adopts high-precision collimation (ア ラ イ Application メ Application ト) mechanisms and form.Relative therewith, public electrode 72 is formed by transparent material, and therefore, the mode with covering luminous element 70 in the A of effective coverage similarly forms in the A of effective coverage.Therefore, public electrode 72 also can adopt the low collimation mechanism of the position registration mechanism precision more used than the formation of auxiliary electrode 150 to form.But, adopt the low collimation mechanism of precision and when forming public electrode 72, the position of the end E1 of public electrode 72 may change.
At this, the scope of the site error of the end E1 of public electrode 72 is set at t1, the scope of the site error of the end E4 of auxiliary electrode 150 is set at t2.When auxiliary electrode 150 being adopted the higher detent mechanism of precision, t1＞t2.In addition, for auxiliary electrode and public electrode 72 both sides, when all using the single collimation mechanism of precision of the required degree of formation with auxiliary electrode 150, t1=t2.Thus, the error t2 of auxiliary electrode 150 is lower greater than the possibility of the error of public electrode 72, supposes in the latter case, even t1＜t2, owing to adopted high-precision collimation mechanism, the error of t1 also less is a problem.So in the present embodiment, the end E4 of auxiliary electrode 150 constitutes in the mode that is positioned at than the more close outside of end E1 of public electrode 72.According to this formation, the error that can consider auxiliary electrode 150 in the end E5 of substrate 10 side from becoming maximum position E4max (end E4 is the position when nearest with the end E5 side of substrate 10) to the distance of holding E5, and the width (that is, " margo frontalis zone ") of decision neighboring area B.Thus, compare, the margo frontalis zone can be dwindled allowing the end E1 of the public electrode 72 of mistake more to be disposed at than the situation in the more close outside of end E4 of auxiliary electrode 150.That is, can reduce the precision of the employed collimation mechanism of formation of public electrode 72 to the influence of the width in margo frontalis zone.In addition, it is desirable to, error with public electrode 72 becomes maximum position E1max in the end E5 of substrate 10 side, become the mode of the maximum more close inboard of E4max, position than the error of auxiliary electrode 150 in the end E5 of substrate 10 side, set the reference position (position when not having error) of end E1 and end E4.
Fig. 6 as a comparative example, expression public electrode 72 overlaps with the end E2 of second interlayer dielectric 35 and the state that forms.As shown in Figure 6, in this comparative example, the end E1 of public electrode 72 is configured in than the end E2 of second interlayer dielectric 35 more in the outer part.As mentioned above, second interlayer dielectric 35 forms thicker film for the convex-concave planarization that makes lower floor.Thus, the end E2 of second interlayer dielectric 35 has big step.Relative therewith, public electrode 72 for example forms with membraneous materials such as ITO.Therefore, in the formation shown in the comparative example, the influence because of the step of the end E2 of second interlayer dielectric 35 can produce be full of cracks I as shown in Figure 6 in public electrode 72.If produce be full of cracks I, then increase at be full of cracks part resistance value, the part that produces at be full of cracks I is different with the current value that the part that does not produce be full of cracks I flows through, the falling quantity of voltages difference.Therefore, in the present embodiment,, therefore can prevent the broken string and the be full of cracks of public electrode 72 because the end E1 of public electrode 72 is disposed at the end E2 position more in the inner part than second interlayer dielectric 35.Therefore, the increase of broken string and the resistance value that causes of be full of cracks can be prevented trouble before it happens.The uneven luminance that therefore, can suppress light-emitting component 70.
＜A-2: the variation that the 1st embodiment is related 〉
In the above-described embodiment, the formation when auxiliary electrode 150 and pixel electrode 76 are formed simultaneously is illustrated, and still, the pixel electrode 76 of also can getting along well forms simultaneously, and forms auxiliary electrode 150 in the operation after forming next door 37.
Fig. 7 is the fragmentary cross-sectional view of the related light-emitting device 1A of this variation.As shown in Figure 7, in light-emitting device 1A, be formed with auxiliary electrode 150 (150a, 150b) in the mode that covers second interlayer dielectric 35 and next door 37.In the above-described embodiment, as shown in Figure 4, auxiliary electrode 150 has the top part that is formed at second interlayer dielectric 35 and next door 37.Relative therewith, in this variation,, form auxiliary electrode 150 on the next door 37 in part with next door 37.At this, the next door 37 and second interlayer dielectric 35 are same, as the insulation course that public electrode 72 and auxiliary electrode 150 are separated from transistor 40,50,60 and bring into play function.In addition, same with the 1st above-mentioned embodiment, the end E4 of auxiliary electrode 150 and second electrode overlap with power lead 140, and the end E1 of public electrode 72 is than the more close inboard of end E4 of auxiliary electrode 150, and then, than the more close inboard of end E2 of second interlayer dielectric 35 and form.
The summary of the manufacturing process of light-emitting device 1A is as described below.After forming second interlayer dielectric 35, form pixel electrode 76 on the upper strata of second interlayer dielectric 35.Afterwards, form next door 37 on the upper strata of pixel electrode 76, the surface the peristome 37a on second interlayer dielectric 35 and next door 37 forms auxiliary electrode 150.Then, form light emitting functional layer 74 in the space (that is peristome 37a) of drawing on the fixed pixel electrode 76 by next door 37.In addition, otherwise, also can form light emitting functional layer 74 back formation auxiliary electrodes 150.In addition, across effective coverage A and neighboring area B and form public electrode 72 with light transmission.Afterwards, on public electrode 72, form diaphragm seal 80.But, do not form diaphragm seal 80 in the outer end edges of substrate 10, in this outer end edges, seal 90 is bonded on the circuit protection film 34, and engaging at an upper portion thereof has transparent sealing substrate 110.
If,, therefore,, also needn't worry can make light emitting functional layer 74 deteriorations even use photoetching process to form auxiliary electrode 150 owing to also do not form light emitting functional layer 74 at the time point that forms auxiliary electrode 150 forming auxiliary electrode 150 back formation light emitting functional layer 74.Thus, can form the pattern of auxiliary electrode 150 by photoetching process, thereby, can be with forming auxiliary electrode 150 with same precision such as the distribution of transistor 40,50,60 and sweep trace 111 etc.On the other hand, if, then have auxiliary electrode 150 and do not polluted by luminescent material forming light emitting functional layer 74 back formation auxiliary electrodes 150, and the advantage that auxiliary electrode 150 can be connected with public electrode 72.
In addition, in this variation, form public electrode 72 on the upper strata of auxiliary electrode 150,, also can not produce stress public electrode 72 even therefore form the auxiliary electrode 150 thicker than public electrode 72.Therefore, can suppress the distortion of the public electrode 72 that the stress from the upper strata causes.
＜B: the 2nd embodiment 〉
Below, the related light-emitting device of the 2nd embodiment of the present invention is described.Fig. 8 is the fragmentary cross-sectional view of the related light-emitting device 2A of present embodiment.As shown in Figure 8, auxiliary electrode 150 forms diaphragm seal 80 to form with carrying out the mode that face contacts above the public electrode 72 in the mode that covers auxiliary electrode 150 and public electrode 72.Light-emitting device 2A except that public electrode 72 is formed at lower floor's this point of auxiliary electrode 150 and the related light-emitting device 1A (Fig. 7) of the 1st embodiment same.Thus, its explanation is suitably omitted.
Same with above-mentioned light-emitting device 1A, in the present embodiment, form auxiliary electrode 150 on the upper strata in the close next door 37 of the part that next door 37 is arranged.Thus, the next door 37 and second interlayer dielectric 35 are same, and tool is as the insulation course performance function that public electrode 72 and auxiliary electrode 150 are separated from transistor 40,50,60.
The summary of the manufacturing process of light-emitting device 2A is as described below.After forming second interlayer dielectric 35, form pixel electrode 76 on the upper strata of second interlayer dielectric 35.Afterwards, form next door 37, form light emitting functional layer 74 in the space (that is peristome 37a) of drawing on the fixed pixel electrode 76 by next door 37 on the upper strata of pixel electrode 76.In addition, across effective coverage A and neighboring area B and form transparent public electrode 72.Afterwards, the zone the upper strata of the peristome 37a on public electrode 72 forms auxiliary electrode 150, and forms diaphragm seal 80.But, do not form diaphragm seal 80 in the outer end edges of substrate 10, in this outer end edges, seal 90 is bonded on the circuit protection film 34, and engaging at an upper portion thereof has transparent sealing substrate 110.
The simple sectional view of the part of regional F in Fig. 9 presentation graphs 8.As Fig. 8 and shown in Figure 9, in light-emitting device 2A, be the outside in the face of transistor 40, the 50 more close substrates 10 of the part of scan line drive circuit 100 likening to, the end E1 of public electrode 72 is formed at the position more in the inner part than the end E2 of second interlayer dielectric 35, and is formed at the position more in the inner part than the end E4 of auxiliary electrode 150.Thus, can obtain and the same effect of above-mentioned the 1st embodiment.
＜C: variation 〉
(1) in the above-mentioned first and the 2nd embodiment, by cover the upper strata of public electrode 72 or auxiliary electrode 150 with diaphragm seal 80, constituting to make and contain element layer 30, second electrode and avoid the layer structure of outer gas influence with the structure of power lead 140, second interlayer dielectric 35, public electrode 72, auxiliary electrode 150, still also can be the formation of omission diaphragm seal 80.
Figure 10 represents the simple sectional view of the light-emitting device IC that this variation is related.As shown in figure 10, in light-emitting device IC, diaphragm seal 80 is not set, utilizes the substrate of facing mutually with seal 90 110 to protect the layer structure that is formed on the substrate 10.In addition, be used to absorb the drying agent (diagram is omitted) of moisture in the configuration of the inboard of counter substrate 110, perhaps, it constitutes also can adopt the structure of imbedding drying agent in counter substrate 110 self.In addition, also can replace counter substrate 110 and seal 90 and use sealable tank.
Figure 11 represents the schematic drawing of another light-emitting device 1D that this variation is related.As shown in figure 11, in light-emitting device 1D, by in counter substrate 110 be formed at filling moisture resistance compaction material 65 between the layer structure of upper surface of substrate 10, protective layer structure and avoid outer gas influence.As moisture resistance compaction material 65, it is desirable to have the material of light light transmission and low moisture absorption, can use epoxies, urethanes class cementing agent etc.
(2) in above-mentioned the 1st～the 4th embodiment, second electrode is illustrated in the mode that neighboring area B forms Japanese " コ " word shape with power lead 140, still, be not limited to this, suitably distortion also can.
Each Figure 12 and Figure 13 are the figure of summary of the layout of each light-emitting device of being used to illustrate that this variation is related.In these figure, to the part attached and same symbol common with above-mentioned embodiment, this explanation is suitably omitted.
Shown in Figure 12 (A), in light-emitting device 3A, be equipped with second electrode with power lead 140 along each edge part on the both sides of facing mutually of substrate 10.In addition, be equipped with signal input terminal G in the zone on one side along the residue both sides, the inboard in the face of the substrate 10 of this signal input terminal G is equipped with first electrode with power lead 130.Dispose scan line drive circuit 100A and 100B with the inboard of power lead 140 along effective coverage A and along each effective coverage A at second electrode,, and give and control signal from the outside by signal input terminal G by power lead 140 power supplies.In addition, in the inboard of first electrode, dispose data line drive circuit 200 along effective coverage A with power lead 130.Data line drive circuit 200 one side are given electricity by first electrode with power lead 130, on the one hand via the control signal of signal input terminal G acceptance from the outside, and supply to each data line.
In this embodiment, second interlayer dielectric 35 with cover effective coverage A, scan line drive circuit 100A, 100B, and the part of whole and first electrode usefulness power lead 130 of data line drive circuit 200 (in illustrated example, when the limit that sets signal input terminal G is set at length direction, the part of extending to length direction all with the part of the part of extending towards the bottom of substrate 10 in the direction vertical with length direction) mode form.In addition, public electrode 72 covers the whole of effective coverage A and scan line drive circuit 100A, 100B, is equipped with second electrode mode to become than the more close inboard of an end of second interlayer dielectric 35 of holding about with a side of power lead 140 and forms.In addition, in the end of public electrode 72, following avris (signal input terminal G side) end is positioned at the outside of effective coverage A and the inboard of data line drive circuit 200, and the top side is positioned at the position than the more close inboard of second interlayer dielectric, 35 ends.That is, each end on four limits of public electrode 72 is positioned at the position than each more close inboard of end, limit of the correspondence of second interlayer dielectric 35.In other words, the end of second interlayer dielectric 35 is in its whole limit, and is all outstanding than the end of public electrode 72.That is, it is whole that second area covers the first area, and, all stretch out more laterally at whole avris than the first area.
Auxiliary electrode is as the individual electrode 150c of the strip that will the direction identical with the limit that is equipped with signal input terminal G be made as long limit and form.Specifically, individual electrode 150c is in the gap of effective coverage A by light-emitting component P, at neighboring area B by as the inboard of first area with as the outside of first area and arrive the outside of second area as the area inside of second area, afterwards, extend to the zone that overlaps with power lead 140 with second electrode, and be electrically connected with power lead 140 with second electrode.That is, this end is than the more close outside of the end of second interlayer dielectric 35, and, be positioned at position than the public electrode 72 more close outsides.Even utilize this variation also can obtain the effect same with the respective embodiments described above.
Below, shown in Figure 12 (B), light-emitting device 3B is except that this point is reversed in the position of scan line drive circuit and data line drive circuit and light-emitting device 3A is same formation.That is, in light-emitting device 3B, along effective coverage A configuration, data line drive circuit 200A, 200B are disposed at each left side of substrate 10 and the neighboring area B of the right side to scan line drive circuit 100 at the neighboring area of the following avris of substrate 10 B.Second electrode power lead 140, along being disposed at the outside of each data line drive circuit 200A, 200B with the both sides (the right and left) that substrate 10 is faced mutually, auxiliary electrode 150 will form strip with the vertical direction of power lead 140 (that is, direction) identical with the limit that sets signal input terminal G as length with second electrode.3A is same with light-emitting device, each end is positioned at the position than the more close outside of end of public electrode 72 about auxiliary electrode 150, and then, be positioned at position than the more close outside of second interlayer dielectric, 35 ends, form to overlap ways of connecting with power lead 140 with second electrode.Therefore, even utilize light-emitting device 3B also can obtain the effect same with above-mentioned embodiment.
In addition, in all light-emitting device 3A and 3B, also can be shown in the right side of Figure 12 (A), auxiliary electrode 150 and banded a plurality of individual electrode 150c are formed at neighboring area B, and have the connection electrode 150d that connects a plurality of individual electrode 150c.In this case, connection electrode 150d has: with the inboard superposed part of first area, by as the outside of first area and as the area inside of second area part to the outside of second area, and then to form with the mode that power lead 140 overlaps with second electrode.That is, connection electrode 150d not only overlapping with power lead 140 with second electrode, and disposes with the mode that connection electrode 150d overlaps with second interlayer dielectric, 35 ends and public electrode 72 ends.
Figure 13 (A) reaches (B) example of another layout of expression light-emitting device.Shown in Figure 13 (A), in light-emitting device 4A, be equipped with signal input terminal G along the lower limb of substrate 10, second electrode is Japanese " コ " word shape with power lead 140 and is equipped on its inboard.In addition, first electrode is Japanese " コ " word shape with power lead 130 and is equipped on the inboard of second electrode with power lead 140, and data line drive circuit 200 is equipped on this first electrode with between power lead 130 and the effective coverage A.Scan line drive circuit 100A, 100B are equipped on separately along the zone of the left and right sides Ge Bian of effective coverage A.
As shown in the figure, second interlayer dielectric 35 is all to cover effective coverage A, scan line drive circuit 100A, 100B, and data line drive circuit 200 is whole, use the part of power lead 130 (in illustrated example with first electrode, when the limit that is equipped with signal input terminal G is set at long side direction, the part of extending at long side direction) mode forms.Public electrode 72 covers and the roughly same part of second interlayer dielectric 35.And the corresponding end mode more in the inner part that becomes than second interlayer dielectric 35 with each end on four limits of public electrode 72 forms.Thus, in this variation, at whole avris of substrate 10, the second area that is formed with second interlayer dielectric 35 than the first area that is formed with public electrode 72 more the lateral direction in the face of substrate 10 stretch out.
As shown in the figure, the banded individual electrode 150e that extend as being made as long limit with scan line drive circuit 100A, 100B parallel direction of auxiliary electrode forms.The end of the individual electrode 150e of the lower end side of substrate 10 forms to overlap ways of connecting with second electrode with power lead 140.In addition, in this embodiment, the individual electrode 150e and first electrode intersect with power lead 130, but, since separately layer form first electrode with power lead 130 and second electrode with power lead 140, individual electrode 150e only connects with power lead 130 with first electrode of getting along well and second electrode forms with power lead 140 ways of connecting.Equally, the public electrode 72 and first electrode overlap with power lead 130, but, since separately layer form first electrode with power lead 130 and second electrode with power lead 140, the therefore formation that public electrode 72 and first electrode can be designed to not electrically contact with power lead 130.On the other hand, the end of the individual electrode 150e of the upper end side of substrate 10 than the end of public electrode 72 more in the outer part, and then, form in end (second area) mode more in the outer part that is positioned at than second interlayer dielectric 35.Thus, even utilize light-emitting device 4A also can obtain the effect same with the respective embodiments described above.
Below, shown in Figure 13 (B), light-emitting device 4B is except that this point is reversed in the position of scan line drive circuit and data line drive circuit and light-emitting device 4A is same formation.That is, in light-emitting device 4B, along effective coverage A configuration, data line drive circuit 200A, 200B are disposed at each left side of substrate 10 and the neighboring area B of the right side to scan line drive circuit 100 at the neighboring area of the following avris of substrate 10 B.Second electrode is becoming " コ " word shape in substrate 10 lower end side than signal input terminal G position configuration more in the inner part with power lead 140, and auxiliary electrode 150 forms the strip of the direction parallel with data line drive circuit 200A, 200B as long limit.4A is same with light-emitting device, each end up and down of auxiliary electrode 150 is positioned at the position than the more close outside of end of public electrode 72, and, be positioned at position than the more close outside of end of second interlayer dielectric 35, and the lower end forms to overlap ways of connecting with second electrode with power lead 140.Therefore, even utilize light-emitting device 4B also can obtain the effect same with above-mentioned embodiment.
Shown in Figure 12 (A), Figure 12 (B), Figure 13 (A) and Figure 13 (B), in the B of neighboring area, auxiliary distribution 150 extends into strip with respect to the bearing of trend of second electrode with power lead 140 in the direction of reporting to the leadship after accomplishing a task with it.That is, in Fig. 1 to Fig. 3, auxiliary distribution 150b also extends to the bearing of trend of second electrode with power lead 140, but only to also passable with the crisscross extension of the bearing of trend of power lead 140 with respect to second electrode.In other words, auxiliary distribution 150 and inessential using the parallel direction of bearing of trend of power lead 140 to form, to form also passable with the mode that power lead 140 intersects with second electrode with second electrode.
D: electronic equipment
Below, the electronic equipment that has used light-emitting device of the present invention is described.In Figure 14 to Figure 16, illustrate the form of the electronic equipment that the light-emitting device with above any-mode adopts as display device.
Figure 14 is the stereographic map that expression has adopted the personal computer of the movable type of light-emitting device to constitute.Personal computer 2000 possesses: show light-emitting device 1,1A, 1C, 1D, 2A, 3A, 3B, 4A, the 4B of various images, the main part 2010 of power switch 2001 and keyboard 2002 is set.Light-emitting device 1,1A, 1C, 1D, 2A, 3A, 3B, 4A, 4B use the organic light-emitting diodes transistor unit as light-emitting component 70, therefore can show angle of visibility extensively, the picture easily watched.
Figure 15 has represented to use the stereographic map of formation of the portable telephone of light-emitting device.Portable telephone 3000 possesses: a plurality of operating keys 3001 and shifting bond(s) 3002 and show light-emitting device 1,1A, 1C, 1D, 2A, 3A, 3B, 4A, the 4B of various images.By operation shifting bond(s) 3002, the picture that is shown on light-emitting device 1,1A, 1C, 1D, 2A, 3A, 3B, 4A, the 4B is moved.
Figure 16 has represented to use the stereographic map of formation of the portable information terminal (PDA:personal DigitalAssistants) of light-emitting device.Mobile information end 4000 possesses: light-emitting device 1,1A, 1C, 1D, 2A, 3A, 3B, 4A, the B of a plurality of operating keys 4001 and power switch 4002, the various images of demonstration.During operating power switch 4002, the various information of so-called address list and timetable are shown in light-emitting device 1,1A, 1C, 1D, 2A, 3A, 3B, 4A, 4B.
In addition, as the electronic equipment of using apparatus of the present invention, except the equipment of Figure 14～shown in Figure 16, also can enumerate: have the equipment of digital camera, televisor, video camera, vehicle navigation apparatus, pager, electronic notebook, Electronic Paper, desk top computer, word processor, workstation, videophone, POS terminal, printing machine, scanner, duplicating machine, video machines, touch panel etc.In addition, the purposes of light-emitting device of the present invention is not limited to the demonstration of image.For example, in the image processing system of printing machine that is called optical-write-in mode and electronic copier, used shaven head (write head), described shaven head makes the photoreceptor exposure according to the image that should form on paper, and also can use light-emitting device of the present invention as this shaven head.

Claims (10)

1. light-emitting device, on substrate, have effective coverage that is arranged with a plurality of light-emitting components and the neighboring area that centers on this effective coverage, described each light-emitting component has first electrode, second electrode and is positioned between the two luminescent layer, the described a plurality of light-emitting components of described second electrode pair commonly are provided with, also has the element layer that disposes the luminous circuit component that is used to control described light-emitting component, wherein
Have:
Auxiliary electrode, it is electrically connected with described second electrode;
Insulation course, it is disposed at the upper strata of described element layer, and has the part that is disposed at than described second electrode and the more close lower floor of described auxiliary electrode, be used for described second electrode and described auxiliary electrode are insulated from described circuit component,
Described second electrode covers described effective coverage, exposes in described neighboring area and formation similarly,
Described auxiliary electrode by the gap of described a plurality of light-emitting components, is formed at the part of described neighboring area in described effective coverage,
In described neighboring area, become maximum position than the site error of the described auxiliary electrode distolateral mode that becomes maximum more close inboard, position at described substrate with the site error of described second electrode described substrate distolateral, the position that does not have error of setting the end of the end of described second electrode and described auxiliary electrode is the reference position.
2. light-emitting device as claimed in claim 1 is characterized in that,
Described second electrode is disposed at the lower floor of described auxiliary electrode.
3. a light-emitting device has effective coverage that is arranged with a plurality of light-emitting components and the neighboring area that centers on this effective coverage on substrate, it is characterized in that,
Possess:
A plurality of first electrodes, it is corresponding with each of described a plurality of light-emitting components and be provided with;
Second electrode, it commonly is provided with described a plurality of light-emitting components;
Luminescent layer, it is between between described a plurality of first electrodes and described second electrode;
Auxiliary electrode, it is electrically connected with described second electrode;
Element layer, it disposes the luminous circuit component that is used to control described light-emitting component;
Insulation course, it makes between described second electrode or described auxiliary electrode and the described element layer and insulate,
Described second electrode is arranged at the first area of at least a portion that comprises all and described neighboring area, described effective coverage,
The described first area of all neutralizations overlaps described insulation course in described effective coverage, is arranged at the second area that more extends to the first direction as the lateral direction in the face of described substrate than described first area in described neighboring area,
Described auxiliary electrode, mode in described effective coverage with the gap by described a plurality of light-emitting components is provided with, and in described neighboring area, become maximum position than the site error of the described auxiliary electrode distolateral mode that becomes maximum more close inboard, position at described substrate with the site error of described second electrode described substrate distolateral, the position that does not have error of setting the end of the end of described second electrode and described auxiliary electrode is the reference position.
4. light-emitting device as claimed in claim 3 is characterized in that,
Described a plurality of light-emitting component is arranged in rectangular,
Described auxiliary electrode, have by described a plurality of light-emitting components the gap and to be arranged to a plurality of individual electrode of striated along described first direction from the mode in the outside of inboard to the described effective coverage of described effective coverage.
5. light-emitting device as claimed in claim 4 is characterized in that,
Described auxiliary electrode also has in described neighboring area the interconnected connection electrode of described a plurality of individual electrode.
6. light-emitting device as claimed in claim 5 is characterized in that,
With described connection electrode and the mode that the end of the described first direction of described insulation course overlaps, dispose described connection electrode.
7. light-emitting device as claimed in claim 6 is characterized in that,
Described auxiliary electrode is with the gap by described a plurality of light-emitting components and from the mode in inboard to the outside of described second area of described effective coverage, is arranged to a plurality of individual electrode of strip along described first direction.
8. as each described light-emitting device in the claim 3～7, it is characterized in that,
Be used for supplying with the second electrode power lead of current potential, be arranged at described neighboring area in mode with described first direction intersection to described second electrode,
Described second electrode is electrically connected with power lead and described auxiliary electrode.
9. light-emitting device as claimed in claim 8 is characterized in that,
Described second electrode is arranged at the outside of described first area with power lead.
10. an electronic equipment has each described light-emitting device in the claim 1～9.
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