CN101241889A - 封装的凸点下金属层结构及其制造方法 - Google Patents

封装的凸点下金属层结构及其制造方法 Download PDF

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Publication number
CN101241889A
CN101241889A CNA2008100029748A CN200810002974A CN101241889A CN 101241889 A CN101241889 A CN 101241889A CN A2008100029748 A CNA2008100029748 A CN A2008100029748A CN 200810002974 A CN200810002974 A CN 200810002974A CN 101241889 A CN101241889 A CN 101241889A
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layer
metal
dielectric layer
perforate
metal level
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S·房
W·K·杨
C·L·蔡
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Advanced Chip Engineering Technology Inc
Silicon Storage Technology Inc
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Advanced Chip Engineering Technology Inc
Silicon Storage Technology Inc
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Publication of CN101241889A publication Critical patent/CN101241889A/zh
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Abstract

用于半导体集成电路裸片的封装，包括和裸片的焊盘电连接的第一阻挡层上形成的重分配层。第二阻挡层是在所述重分配层上形成。多金属层是在第二阻挡层上形成以连接焊剂球，其中所述多金属层有延长部分，其延伸到第二开孔外在所述第二电介质层顶部上以防止来自所述焊剂球的锡渗透进入所述重分配层。

Description

封装的凸点下金属层结构及其制造方法
技术领域
[0001]本发明涉及半导体封装中的凸点下金属层(under bumpmetallurgy，UBM)结构，更具体而言，涉及UBM方案以防止锡渗透。
背景技术
[0002]当集成电路(IC)向更高的速度和更大的管脚数前进时，由于传统的引线结合技术已经接近或者甚至到达了它们的极限，所以用于实现细微间距引线结合结构的传统技术不能与由增加的IC芯片加工速度和更高的IC芯片管脚数所产生的需求同步。同样地，当前的趋势是用其它封装结构和组件，例如倒装芯片封装(flip chip package)和晶片级封装(wafer level package，WLP)，来替换引线结合结构。
[0003]一些芯片结合技术利用连接在芯片上焊盘的铜凸点(copperbump)来建立用于信号输入和输出的电连接。例如新封装方法包括BGA(ball grid array，球栅阵列式)和CSP(chip scale package，芯片尺寸封装)方法，在那里半导体芯片被安装在基板上，例如印刷电路板上。在倒装芯片结合中，凸点通常预先在半导体芯片的所述焊盘(bonding pad)上形成并且所述凸点然后和位于互连接基板上的终端相接口，随后进行例如热压结合。已知如“玻璃上芯片(chip on glass)”的安装技术作为用于采用平顶金属凸点例如铜凸点来安装驱动芯片的成本效率技术出现了。参见例如2005年6月9日出版的美国专利申请2005/0124093和2005年10月27日出版的美国专利申请2005/0236696。铜凸点可以通过在所述芯片焊盘上形成的凸点下金属层(UBM)上进行铜的电沉积方法形成。铜凸点(柱)典型地在光刻胶或其他有机树脂材料形成的掩模内形成，所述光刻胶或者其他有机树脂材料在所述芯片焊盘上限定了所述凸点形成区域。
[0004]另外在本领域中，在将裸片(die)连接到倒装晶片封装中采用焊料凸点(solder bump)是众所周知的。在这样结构中，提供了具有设置于其上的I/O焊盘或裸片焊盘的裸片。提供光聚合物钝化层以保护加工期间所述裸片免受损伤。UBM结构设置在所述芯片焊盘上，并且焊剂球设置或者形成在所述UBM结构的顶部上。本领域内众所周知，焊剂球被用来在所述裸片和印刷电路板(PCB)或其它器件之间形成电和机械连接。影响焊接缝寿命的重大因素是与所述焊接缝联合采用的所述UBM结构。但是，现有的UBM方案被设计来最优化冶金学或加工参数而不是来提高焊接缝的可靠性。在常规封装方案中，锡渗透发生。来自所述焊剂的锡将渗透通过所述UBM的结构到所述焊盘。例如如果所述UBM界面包括铜并且所述焊剂球是锡铅合金，那么锡渗透将可能发生。如果锡渗透发生，这导致所述铜金属变得易碎和更加刚性，减少了温度循环测试期间在所述封装级和板级上的可靠性。
[0005]参照图1，显示了当前技术结合结构的剖面图。在这个实施方案中，其上形成有集成电路的硅基板裸片101具有铝焊盘102。氮化硅钝化层103在硅基板101上形成。第一BCB或光引发剂(PI)电介质层104在所述钝化层103上形成。第一开孔形成在所述第一绝缘层104和钝化层103中。阻挡金属层105例如Ti/Cu，被溅射在包括在所述第一开孔内的所述第一绝缘层104上。铜106层被电镀在所述阻挡金属层105上。镍层107然后电镀在所述铜层106上。金107然后电镀在所述镍层107上。最后焊剂球109在所述金层108上形成。因为所述焊剂球109典型地包含锡，所以锡渗透入所述金属层107/106/105能发生。在温度循环期间，所述锡渗透能引起所述金属层107/106/105开裂。
[0006]参照图2，显示了当前技术另一结合结构的剖面图。在这个实施方案中，其在美国专利7,005,752被公开，类似于显示在图1中的当前技术结构，显示在图2的结构包括：其上形成有基层电路的硅基体裸片201具有铝焊盘202。氮化硅钝化层203在所述硅基板201上形成。第一BCB或光引发剂(PI)电介质层210在所述钝化层203上形成。第一开孔形成在所述第一绝缘层210和钝化层203中。阻挡金属层205例如Ti/Cu，被溅射在包括在所述第一开孔中的所述第一绝缘层210上。金属层206例如TiW/Cu，也被溅射在所述阻挡金属层205上。焊剂球207沉积在所述溅射金属层206上。显示在图2中的结构的缺点是所述溅射层206/205典型地是非常薄，并且能引起金属之间连接的问题。而且，焊剂球应力在没有任何缓冲下冲击铝焊盘。因而，在温度循环期间，金属可能开裂。
[0007]由于所述上述缺点，需要的是用于封装的新UBM结构和解决上述缺点的方法。
发明内容
[0008]用于半导体集成电路封装的金属化结构有在其上形成焊盘的半导体集成电路裸片(die)。具有第一开孔的第一电介质层在所述裸片上形成。第一金属层在所述第一开孔内和所述焊盘之上形成并且延伸在所述第一电介质层上。重分配金属层(redistributed metal layer)在所述第一开孔内和所述第一金属层上形成。多金属层在所述重分配金属层上形成，其中所述多金属层包括第一阻挡金属层，和在所述第一阻挡金属层上形成的第二金属层。多金属层的尺寸支撑着焊剂球，以防止所述焊剂球中的金属迁移进入所述重分配金属层。
[0009]本发明还涉及创造用于前述描述的半导体封装的凸点下金属层的形成方法。
附图说明
[0010]上述目标、和其它特征和本发明的优点在阅读以下详细的描述并结合附图后将变得明显，其中：
[0011]图1是当前技术的冶金学结构的一种实施方案的示意图。
[0012]图2是当前技术的冶金学结构的另一种实施方案的示意图。
[0013]图3是根据本发明裸片的铝焊盘上的凸点下金属层结构的示意图。
[0014]图4是根据本发明封装的RDL金属层上的凸点下金属层结构的示意图。
具体实施方式
[0015]本发明公开用于裸片的半导体封装的凸点下金属层结构及其制备方法。它还能应用于晶片级封装。本发明的一些示例实施方案现在将在更详细地描述。然而应当认可本发明除了那些明确被描述的以外可以在范围很宽的其它实施方案中应用，并且本发明的范围没有公开限制，除了在所附权利要求中指定的以外。
[0016]新的凸点下金属层(UBM)层在这里被公开，其是特别适合和晶片级芯片尺度封装(WLCSP)一起使用。所述UBM显著地提高了封装的寿命，并且还避免了锡渗透问题。通过在所述UBM的材料和所述焊剂材料之间提供更大的接触面积进一步提高所述焊剂接头(solderjoint)的机械性能，因此提高了所述焊剂UBM界面的完整性。在当前技术情况下，这些材料的相互扩散减少了沿所述界面焊剂疲劳的可能性。
[0017]当然，如果需要UBM结构，则可以通过适当限定所述光刻胶，可以轻微地修改这个程序。本发明的所述UBM结构的例子在图3和4中举例说明，并且理解这个实施方案存在许多变化。这些结构对于在器件上形成设计用于引线结合的焊剂凸点(这是通常需要重新分布焊盘的情况)是有用的。
[0018]参照图3，显示了根据本发明在裸片的铝焊盘上UBM结构的剖面图(明显放大的)。提供了硅基板或裸片101。钝化层103例如BPSG在硅基板101上形成。弹性电介质层104，其可以是例如材料譬如BCB、SINR(硅氧烷类聚合物)、环氧树脂、聚酰亚胺或树脂，然后被沉积，并且部分地在所述钝化层103之上。弹性电介质层104可以通过印刷、涂覆、或使用光刻工艺和蚀刻工艺来形成以去除部分弹性电介质层来创造第一开孔以暴露典型地由铝制成的所述焊盘102。接着，第一阻挡金属层105在所述第一开孔内和焊盘102上形成。为了为在以后阶段引入的所述焊剂凸点提供合适的位置和间距，重分配层(RDL)可以在第一阻挡金属层105上形成。在本发明中，所述重分配层可以包括铜或铜合金的第一层106和金或金合金的第二层107。例如，层106典型地具有层厚大约5微米-大约20微米，优选地大约8微米-大约15微米，层107典型地具有层厚大约0.05微米-大约0.5微米，优选地大约0.1微米-大约0.25微米。因为RDL层106/107比电介质层104中的所述开孔宽，所以RDL层106/107重分配应用在焊剂球113上的力，以便它不仅仅冲击焊盘102。力的重新分配释放了在温度循环测试期间的应力。
[0019]其次，弹性电介质层108被沉积，并且部分地在RDL106/107上以保护RDL106/107。弹性电介质层108可以通过印刷、涂覆、或使用光刻工艺和蚀刻工艺来形成以部分去除弹性电介质层108来创造第二开孔以暴露RDL  06/107。在这种方法中，所述UBM的形状主要由有图案的弹性电介质层108确定。可光限定的环氧树脂能任选地涂覆在晶片上以作为应力补偿层(SCL)。
[0020]供选择地，弹性电介质层108可以用作所述SCL。例如，弹性电介质层108典型地具有层厚大约10微米-大约50微米，优选地约20微米-大约35微米。在典型的实施方案中，弹性电介质层108包括材料例如BCB、SINR(硅氧烷聚合物)、环氧树脂、聚酰亚胺、树脂、稀释剂、填料或光引发剂。所述环氧树脂优选地是芳香环氧树脂例如双酚A二环氧化物或双酚F二环氧化物。有用的填料包括例如硼硅酸盐玻璃、石英、氧化硅和球状玻璃珠。有用的稀释剂包括例如，比使用的所述芳香环氧树脂有更低折射率的脂肪族环氧树脂或脂环族环氧树脂。因此，例如，如果双酚F二环氧化物被用作芳香环氧树脂，稀释剂可以是脂肪族环氧树脂例如二缩水甘油基(diglycidyl)-1，2-环己烷二羧酸酯、氧化苧烯、3，4-环氧环己烷羧酸3，4-环氧环己基甲基酯、或部分丙烯酸化的双酚F二环氧化物。而且，各种其它的聚合物也能在本发明的实践中利用。
[0021]另外，各种材料可以用于上面描述的SCL。用于此角色的一种材料或多种材料将具有用于保护所述半导体IC裸片和封装免受应力和应变的物理性质，其中所述应力和应变起源于半导体裸片100和芯片101可以连接的载体(举例来说，PCB)之间在热膨胀系数中的任何不同。所述SCL也可以作为用以焊剂球安置的掩模或模板。
[0022]而且，在一些情况下也可以理想的是所述SCL层还作为钝化层。优选地，根据本发明制造的器件中用于所述SCL层的材料是Si3N4，SiON和/或SiO2也可以使用。各种材料可以在这里描述的器件和方法中用作钝化层。钝化层用作保护所述晶片在加工期间免受损伤。所述钝化层还用于隔离所述晶片上的活性位点。优选所述钝化材料是可光限定的材料，例如苯并环丁烯(BCB)，因为这允许使用光刻技术来暴露所述裸片焊盘。其它适于用于所述钝化层的材料包括但不限于聚酰亚胺、氮化硅和氧化硅。为了作为有效的SCL，所述SCL典型必要的是具有与所述相邻裸片非常相配的热膨胀系数(CTE)。
[0023]随后，形成多层UBM结构。在典型的实施方案中，本发明的所述多层UBM结构包括阻挡晶种金属层109和多金属层。阻挡晶种金属层109可以溅射在弹性电介质层108和下层RDL 107或焊盘(在这种情况下没有RDL)上。在一种实施方案中，阻挡晶种金属层109被安置光刻工艺和蚀刻工艺以形成预定的图案。层109优选的是含钛和含铜层。例如含钛层109可以基于各种材料或合金，包括但不限于Ti、Ta、Ti-W、Ti-N或Ta-N合金。另外，阻挡晶种金属层109典型地具有层厚大约0.5微米-大约1微米，优选地大约0.6微米-大约0.8微米。换句话说，可以在这里描述的方法的实践中使用各种材料和材料的组合以促进所述UBM粘结在所述层107上。用于此目的的所述一种或多种材料也可以为行使其它功能，例如提供阻挡晶种金属层109用于用来形成所述UBM的电镀操作。
[0024]在一种实施方案中，光刻胶图案化步骤在履行电镀Cu/Ni/Au层110-112之前执行。换句话说，光刻胶图案在弹性电介质层108或阻挡晶种层109上形成。但是，如果希望，并且如果所述光刻胶层是充分的厚，那么它可以在焊剂放置和回流后再一次通过化学剥离或其它适当手段去除。在一种实施方案中，所述光刻胶图案部分地覆盖阻挡晶种金属层109，这样所述预定的UBM图案构成U形。在光刻胶限定了UBM图案后，电镀Cu/Ni/Au层110-112选择性地仅仅沉积在暴露的Ti//Cu阻挡晶种金属层109区域上。阻挡晶种金属层109和/或多层110-112具有延长的部分108a，其延伸到电介质层108中的所述开孔外和电介质层108的上表面上。延长部分108a在电介质层108上的长度是大约10微米-50微米。延长部分108a被用来防止锡从焊剂球113渗透入所述的RDL层106/107。特别地，延长部分108的长度使得它能支持焊剂球113，这样从焊剂球113来的锡不渗透或迁移通过阻挡晶种金属层109和多层110-112和进入RDL层106/107。阻挡晶种金属层109的组成使得它不允许锡从中通过。这可以通过阻挡晶种层109和多层110-112的尺寸比RDL层106/107长来实现，参见图3。在那种情况下，如果来自焊剂球113的锡渗透或迁移通过阻挡晶种层109和多层110-112的外面并进入第二电介质层108，它将不会进入或迁移进入RDL层106/107。简而言之，阻挡晶种层109和多层110-112的长度起到用以防止来自焊剂球108a的所述锡的保护罩。供选择地，如同图3显示，延长部分108a的长度使得它的大小可以容纳来自焊剂球113的锡使其不进入第二电介质层108。以此方式，虽然延长部分108a的“左”手部分不是长得足以屏蔽整个RDL层106/107，但是延长部分108a是足够长以“容纳”来自焊剂球113的锡使其不进入第二电介质层108。因而如同在权利要求中用到的，所述措辞“防止在所述焊剂球中的金属迁移进入前述重分配金属层”包含了这两个概念。108a的长度能通过所述光刻胶的所述开孔尺寸来确定。
[0025]如同上面提到的，各种材料可以用于构建这里公开提及类型的UBM结构的所述金属层。在典型的实施方案中，本发明的多层金属层结构包括三个金属层110、111和112。第一金属层110可以由铜制作。因而，第一金属层110可以通过使用铜溶液的电镀工艺来形成。例如，第一金属层110典型地具有层厚大约2微米-大约5微米，优选地大约2.5微米-大约3.5微米。纯铜是特别优选的，因为它能容易地采用已经建立完好的方法电镀到几乎任何理想的厚度。具有固有的低内部应力的铜结构能通过电镀工艺形成。相反，其它金属，例如镍，能形成第二金属层111到本发明预期的厚度，同时没有由内部应力引起的变形或结构失效的发生。
[0026]相似的，第二金属层111可以通过使用镍溶液的电镀工艺来形成。另外，第二金属层111典型地具有层厚大约2微米-大约5微米，优选地大约2.5微米-大约3.5微米。铜还容易地和普通使用的Sn-Pb焊剂在回流期间相互扩散以形成金属间区域，所述区域减少了沿着焊剂-UBM界面的断裂。而且，铜具有相对高的拉伸应变，其保证任何发生的应力断裂将发生在所述焊接缝(solder joint)的所述焊剂部分，而不是在所述裸片或UBM结构中。其次，其它金属，例如金，形成第三顶部金属层112。相似的，顶部金属层112可以通过使用金溶液的电镀工艺来形成。在典型的实施方案中，顶部金属层112典型地具有层厚大约0.1微米-大约0.5微米，优选地大约0.15微米-大约0.35微米。
[0027]除铜、镍和金之外，一定数量的其它材料可以用于构建这里公开提及类型的UBM结构。这些材料包括Ag、Cr、Sn和这些材料的各种合金，包括这些材料与铜的合金。在这里描述的所述UBM结构的一些实施方案中，所述UBM可以有多层结构。因而，例如，在一些实施方案中，这些多层的UBM包括但不局限于Ti/Cu-Cu-Ni结构或Ti/Cu-Cu-Ni-Au结构。
[0028]其次，所述光刻胶图案然后通过施加溶剂或通过其它适当手段剥离，并且阻挡晶种层109和金属层110、111和112形成所述的UBM结构。因此，UBM结构(109-112)在焊盘102上形成。如同上述提到的，所述UBM结构基本上是U形状，特别是所述UBM结构的延长部分108a(UBM覆盖区域)，并且所述延长部分108a在电介质层108上的长度是大约10微米-50微米以避免所述的锡渗透。
[0029]在这里描述的所述方法和器件中使用的所述UBM结构可以具有与此处描述的思考一致的各种形状。优选地，所述UBM具有圆形和碗状、或柱状或钉状的内部表面，其形成用于焊剂组合物的适当容器。然而，此处描述的SCL的使用用于形成各种UBM形状和尺寸。
[0030]在所述UBM结构上面安置焊接金属球113。可以使用合适的助焊剂来准备所述UBM的表面以用于焊剂施加。焊剂组合物113可以然后通过球落、丝网印刷或其它合适的方法来施加。所述焊剂组合物然后回流焊以产生焊剂凸点113。如果需要，所得结构随后可以清洗和固化。
[0031]上面描述的工艺是非常干净的并且与晶片加工兼容。在UBM结构(109-112)上放置焊剂凸点113能通过标准、众所周知的工艺完成并且因此有好的产率。既然没有熔融的焊剂挤压进入任何可能在层中存在的空隙或裂纹中，所以焊剂迁移或电失效不会发生。也没有在所述RDL和所述UBM结构之间的粘结问题。这些工艺提供低成本、高可靠性的晶片级封装。这些工艺还提供使用与晶片加工兼容并在完整晶片上进行的制造工艺形成已知的好封装的方式。
[0032]各种焊剂可以与在这里公开的所述结构或方法联合使用。有用的焊剂包括低共熔和非低共熔焊剂，并且在室温时可以是固体、液体、糊状或粉末的形式。这样的焊剂可以基于各种材料或合金，包括Sn-Pb、Sn-Pb-Ag、Sn-Ag-Cu、Sn-Ag、Sn-Cu-Ni、Sn-Sb、Sn-Pb-Ag-Sb、Sn-Pb-Sb、Sn-Bi-Ag-Cu和Sn-Cu。
[0033]如同前述图的结果指示，不是一直可以在最优化一种设计特征时不负面影响另一种设计特征。因而，例如，设计可以有非常高的焊接缝可靠性，但由于在所述UBM结构内的高应力，它可能容易发生材料失效。图3显示了一种好设计。依照此分析表明，在这里提出的所述封装预计有更长的使用寿命。它们还克服所述常规凸点设计的缺点。
[0034]到目前为止，描述了在这里公开的所述结构和方法的一些具体实施方案的细节。然而，这些方法和结构的不同特点中的一定数量的变化是可能的。下述了这些可能的一部分。如于此所描述的，提供了各种利用可光限定的聚合物以创造各种形状和尺寸UBM的方法。还提供了通过这些方法的使用能被制造的各种结构。于此公开的所述方法能够用来创造被发现能提高所述焊接缝的一些机械特征的UBM。于此公开的所述方法还能够用来创造便于在所述UBM上放置焊剂球的UBM。发现单独或组合使用这些各种特点对封装可靠性和使用寿命都有深刻、有益的影响。
[0035]参见图4，显示了根据本发明在封装的RDL迹线上的UBM结构的另一剖面图。需要注意的是它是在所述RDL迹线上的所述UBM结构的另一位置图。图4中指示的附图标记201-213和图3中给出和描述的附图标记101-113一对一直接地对应。
[0036]本发明有如下好处：高可靠性、避免锡渗透、改善SMT焊接缝(特别是LGA)和提高T/C应力释放。另外，本发明能用于常规封装和晶片级封装等。
[0037]本发明的上述描述是示例性的，并且不意欲限制。因此，可以认识到在不离开本发明的范围的情况下，可以对上面描述的实施方案做各种添加、替代和修改。相应地，本发明的范围应该参考附属权利要求来理解。

Claims (20)

1.用于半导体集成电路封装的金属化结构，包括：
具有在其上形成的焊盘的半导体集成电路裸片；
在所述裸片上的具有在其中形成的第一开孔的第一电介质层；
第一金属层，形成在所述第一开孔内和所述焊盘上并延伸在所述第一电介质层上方；
在所述第一开孔内和所述第一金属层上方形成的重分配金属层；和
在前述重分配金属层上方形成的多金属层，其中所述多金属层包括第一阻挡金属层，和在所述第一阻挡金属层上形成的第二金属层；所述多金属层具有尺寸以支持焊剂球，以防止所述焊剂球中的金属迁移进入所述重分配金属层。
2.权利要求1的结构，进一步包括在所述第一电介质层和所述重分配金属层上方的第二电介质层；所述第二电解质层具有暴露所述重分配金属层的第二开孔，其中所述多金属层沉积在所述第二开孔中并与所述重分配金属层接触，并且其中所述多金属层进一步延伸到所述第二电介质层上方。
3.权利要求1的结构，其中所述第一金属层包括钛、铜和其组合。
4.权利要求1的结构，其中所述重分配金属层包括包含铜的第一金属层和包含金的第二金属层。
5.权利要求2的结构，其中所述第一阻挡金属层在所述第二开孔内和所述重分配金属层上方形成。
6.权利要求5的结构，其中所述第一阻挡金属层包含钛、铜和它们的组合。
7.权利要求1的结构，其中所述第一电介质层是选自稀释剂、填料、光引发剂、BCB、SINR(硅氧烷类聚合物)、环氧树脂、聚酰亚胺或树脂的材料。
8.权利要求2的结构，其中所述第二电介质层是选自稀释剂、填料、光引发剂、BCB、SINR(硅氧烷类聚合物)、环氧树脂、聚酰亚胺或树脂的材料。
9.权利要求2的结构，其中所述焊剂球内的所述金属是包含锡的材料。
10.权利要求1的结构，其中所述多金属层具有延伸到所述第二开孔以外在所述第二电介质层上方的部分。
11.用于为半导体封装创建凸点下金属层的方法，包括步骤：
提供带有具有在其上形成的焊盘的裸片的基板；
在所述基板上形成第一电介质层；
去除所述第一电介质层的一部分以创建第一开孔来暴露所述焊盘；
在所述第一开孔内和所述焊盘上沉积第一金属层，所述第一金属层延伸在所述第一电介质层上方；
在所述第一开孔内和所述第一金属层上方形成重分配金属层；和
在所述重分配金属层上方形成多金属层，其中所述多金属层包括第一阻挡金属层，和在所述第一阻挡金属层上形成的第二金属层；所述多金属层具有尺寸来支持焊剂球以防止所述焊剂球中的金属迁移进入所述重分配金属层。
12.权利要求11的方法，其中所述第一金属层包含钛、铜和它们的组合。
13.权利要求12的方法，其中所述重分配金属层包括包含铜的第一金属层和包含金的第二金属层。
14.权利要求13的方法，进一步包括在形成所述重分配金属层后在所述第一电介质层上形成第二电介质层的步骤。
15.权利要求14的方法，进一步包括在形成所述第二电介质层后去除所述第二电介质层的一部分以创建第二开孔来暴露所述重分配金属层的步骤。
16.权利要求15的方法，进一步包括从所述第二开孔去除所述第二电介质层的一部分后，在所述第二开孔内和所述重分配金属层上方形成第一阻挡金属层的步骤。
17.权利要求16的方法，其中所述第一阻挡金属层包含钛、铜和它们的组合。
18.权利要求11的方法，其中所述第一电介质层是选自稀释剂、填料、光引发剂、BCB、SINR(硅氧烷类聚合物)、环氧树脂、聚酰亚胺或树脂的材料。
19.权利要求14的方法，其中所述第二电介质层是选自稀释剂、填料、光引发剂、BCB、SINR(硅氧烷类聚合物)、环氧树脂、聚酰亚胺或树脂的材料。
20.权利要求15的方法，其中所述多金属层具有延伸到所述第二开孔外在所述第二电介质层上的部分。
CNA2008100029748A 2007-01-12 2008-01-11 封装的凸点下金属层结构及其制造方法 Pending CN101241889A (zh)

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