CN101183702B - 半导体发光元件及其制造方法 - Google Patents
半导体发光元件及其制造方法 Download PDFInfo
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- CN101183702B CN101183702B CN2007101870685A CN200710187068A CN101183702B CN 101183702 B CN101183702 B CN 101183702B CN 2007101870685 A CN2007101870685 A CN 2007101870685A CN 200710187068 A CN200710187068 A CN 200710187068A CN 101183702 B CN101183702 B CN 101183702B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 196
- 238000004519 manufacturing process Methods 0.000 title claims description 30
- 239000000758 substrate Substances 0.000 claims abstract description 166
- 238000002310 reflectometry Methods 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 59
- 239000002184 metal Substances 0.000 claims description 46
- 229910052751 metal Inorganic materials 0.000 claims description 46
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- 238000003475 lamination Methods 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 24
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 229910052725 zinc Inorganic materials 0.000 claims description 19
- 229910052782 aluminium Inorganic materials 0.000 claims description 18
- 230000008569 process Effects 0.000 claims description 16
- 229910052709 silver Inorganic materials 0.000 claims description 16
- 229910052711 selenium Inorganic materials 0.000 claims description 15
- 229910052732 germanium Inorganic materials 0.000 claims description 14
- 229910052750 molybdenum Inorganic materials 0.000 claims description 14
- 229910052718 tin Inorganic materials 0.000 claims description 14
- 229910052790 beryllium Inorganic materials 0.000 claims description 13
- 229910052804 chromium Inorganic materials 0.000 claims description 13
- 229910052802 copper Inorganic materials 0.000 claims description 13
- 229910052737 gold Inorganic materials 0.000 claims description 13
- 229910052719 titanium Inorganic materials 0.000 claims description 13
- 229910052721 tungsten Inorganic materials 0.000 claims description 13
- 229910052733 gallium Inorganic materials 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 7
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 238000005253 cladding Methods 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 384
- 229910005540 GaP Inorganic materials 0.000 description 32
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 32
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 23
- 239000011247 coating layer Substances 0.000 description 20
- 230000000694 effects Effects 0.000 description 13
- 238000003466 welding Methods 0.000 description 11
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 10
- 238000000576 coating method Methods 0.000 description 10
- 239000002019 doping agent Substances 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 10
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- 238000005275 alloying Methods 0.000 description 4
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- 229910002059 quaternary alloy Inorganic materials 0.000 description 4
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
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- 229910052714 tellurium Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
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- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
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- 229910003465 moissanite Inorganic materials 0.000 description 1
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- 239000002356 single layer Substances 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (14)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP311646/06 | 2006-11-17 | ||
JP2006311646A JP5306589B2 (ja) | 2006-11-17 | 2006-11-17 | 半導体発光素子及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101183702A CN101183702A (zh) | 2008-05-21 |
CN101183702B true CN101183702B (zh) | 2010-06-09 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007101870685A Active CN101183702B (zh) | 2006-11-17 | 2007-11-19 | 半导体发光元件及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8120041B2 (zh) |
JP (1) | JP5306589B2 (zh) |
CN (1) | CN101183702B (zh) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007299846A (ja) * | 2006-04-28 | 2007-11-15 | Sharp Corp | 半導体発光素子及びその製造方法 |
US20110272727A1 (en) * | 2007-02-13 | 2011-11-10 | Epistar Corporation | Light-emitting diode and method for manufacturing the same |
TW200834969A (en) * | 2007-02-13 | 2008-08-16 | Epistar Corp | Light-emitting diode and method for manufacturing the same |
KR101449005B1 (ko) * | 2007-11-26 | 2014-10-08 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
US8299480B2 (en) * | 2008-03-10 | 2012-10-30 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and method for manufacturing same, and epitaxial wafer |
US7947991B2 (en) * | 2008-07-29 | 2011-05-24 | Huga Optotech Inc. | High efficiency lighting device |
JP2010067890A (ja) * | 2008-09-12 | 2010-03-25 | Hitachi Cable Ltd | 発光素子 |
TWI531088B (zh) | 2009-11-13 | 2016-04-21 | 首爾偉傲世有限公司 | 具有分散式布拉格反射器的發光二極體晶片 |
US8963178B2 (en) | 2009-11-13 | 2015-02-24 | Seoul Viosys Co., Ltd. | Light emitting diode chip having distributed bragg reflector and method of fabricating the same |
US9142715B2 (en) | 2010-06-24 | 2015-09-22 | Seoul Viosys Co., Ltd. | Light emitting diode |
EP2599133A2 (en) | 2010-07-28 | 2013-06-05 | Seoul Opto Device Co., Ltd. | Light emitting diode having distributed bragg reflector |
JP2012204373A (ja) * | 2011-03-23 | 2012-10-22 | Toyoda Gosei Co Ltd | 半導体発光素子 |
KR20150039475A (ko) * | 2013-10-02 | 2015-04-10 | 엘지이노텍 주식회사 | 발광소자 |
CN104022181B (zh) * | 2014-05-26 | 2016-05-18 | 武汉电信器件有限公司 | 一种光电二极管的制作方法 |
CN105322062B (zh) * | 2014-06-28 | 2017-11-17 | 山东浪潮华光光电子股份有限公司 | 一种p面带有DBR反射层的反极性AlGaInP发光二极管结构 |
KR101651923B1 (ko) * | 2014-12-31 | 2016-08-29 | 최운용 | 고전압 구동 발광소자 및 그 제조 방법 |
CN105990475B (zh) * | 2015-02-11 | 2019-03-08 | 中国科学院苏州纳米技术与纳米仿生研究所 | 光电子器件及其制作方法 |
KR102342718B1 (ko) * | 2015-04-27 | 2021-12-23 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 적색 발광소자 및 조명장치 |
CN107689409B (zh) * | 2016-08-03 | 2019-09-20 | 展晶科技(深圳)有限公司 | 发光二极管 |
WO2018139770A1 (ko) * | 2017-01-26 | 2018-08-02 | 엘지이노텍 주식회사 | 반도체 소자 및 반도체 소자 패키지 |
KR102549171B1 (ko) * | 2017-07-12 | 2023-06-30 | 삼성전자주식회사 | 발광소자 패키지 및 이를 이용한 디스플레이 장치 |
CN108172591A (zh) * | 2018-01-05 | 2018-06-15 | 广东迅扬科技股份有限公司 | 一种Micro LED彩色显示阵列结构 |
CN112310255A (zh) * | 2020-11-04 | 2021-02-02 | 山西中科潞安紫外光电科技有限公司 | 一种垂直结构深紫外发光二极管及其制备方法 |
CN114361304A (zh) * | 2021-02-20 | 2022-04-15 | 兆劲科技股份有限公司 | 一种发光元件 |
CN116525733B (zh) * | 2023-06-30 | 2023-08-29 | 江西兆驰半导体有限公司 | 一种反极性发光二极管外延片、制备方法及led |
CN118173677A (zh) * | 2024-05-14 | 2024-06-11 | 聚灿光电科技(宿迁)有限公司 | 红光垂直结构发光二极管的芯片结构及其制备方法 |
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2006
- 2006-11-17 JP JP2006311646A patent/JP5306589B2/ja active Active
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2007
- 2007-11-15 US US11/940,846 patent/US8120041B2/en active Active
- 2007-11-19 CN CN2007101870685A patent/CN101183702B/zh active Active
Patent Citations (2)
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CN1355569A (zh) * | 2000-11-27 | 2002-06-26 | 国联光电科技股份有限公司 | 发光二极体结构及其制造方法 |
CN1567603A (zh) * | 2003-07-04 | 2005-01-19 | 厦门三安电子有限公司 | 一种发光二极管外延结构 |
Also Published As
Publication number | Publication date |
---|---|
US8120041B2 (en) | 2012-02-21 |
CN101183702A (zh) | 2008-05-21 |
JP5306589B2 (ja) | 2013-10-02 |
US20080116471A1 (en) | 2008-05-22 |
JP2008130663A (ja) | 2008-06-05 |
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