CN1567603A - 一种发光二极管外延结构 - Google Patents
一种发光二极管外延结构 Download PDFInfo
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- CN1567603A CN1567603A CN 03138762 CN03138762A CN1567603A CN 1567603 A CN1567603 A CN 1567603A CN 03138762 CN03138762 CN 03138762 CN 03138762 A CN03138762 A CN 03138762A CN 1567603 A CN1567603 A CN 1567603A
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- distributed bragg
- emitting diode
- bragg reflector
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- light
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CNB031387624A CN100477298C (zh) | 2003-07-04 | 2003-07-04 | 一种发光二极管外延结构 |
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CNB031387624A CN100477298C (zh) | 2003-07-04 | 2003-07-04 | 一种发光二极管外延结构 |
Publications (2)
Publication Number | Publication Date |
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CN1567603A true CN1567603A (zh) | 2005-01-19 |
CN100477298C CN100477298C (zh) | 2009-04-08 |
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CNB031387624A Expired - Lifetime CN100477298C (zh) | 2003-07-04 | 2003-07-04 | 一种发光二极管外延结构 |
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Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101273468B (zh) * | 2005-09-27 | 2010-05-19 | 奥斯兰姆奥普托半导体有限责任公司 | 具有电流扩展层的光电子半导体器件及其制造方法 |
CN101183702B (zh) * | 2006-11-17 | 2010-06-09 | 夏普株式会社 | 半导体发光元件及其制造方法 |
CN101388430B (zh) * | 2008-10-27 | 2010-06-09 | 厦门乾照光电股份有限公司 | 一种改良电流扩展层结构的高效发光二极管及其制造方法 |
CN102208504A (zh) * | 2011-05-10 | 2011-10-05 | 北京太时芯光科技有限公司 | 一种四元发光二极管及其制备方法 |
CN102832296A (zh) * | 2011-06-16 | 2012-12-19 | 晶元光电股份有限公司 | 发光组件的制造方法 |
CN104112800A (zh) * | 2014-06-26 | 2014-10-22 | 山西飞虹微纳米光电科技有限公司 | 一种采用复合dbr提高亮度的发光二极管及其制备方法 |
WO2019054943A1 (en) * | 2017-09-15 | 2019-03-21 | Nanyang Technological University | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME |
CN110556463A (zh) * | 2018-05-30 | 2019-12-10 | 首尔伟傲世有限公司 | 具有分布布拉格反射器的发光二极管芯片 |
CN112563378A (zh) * | 2020-12-11 | 2021-03-26 | 西安立芯光电科技有限公司 | 一种氧化增光二极管制作方法 |
JP2021114594A (ja) * | 2019-08-27 | 2021-08-05 | 株式会社東芝 | 光半導体素子 |
-
2003
- 2003-07-04 CN CNB031387624A patent/CN100477298C/zh not_active Expired - Lifetime
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101273468B (zh) * | 2005-09-27 | 2010-05-19 | 奥斯兰姆奥普托半导体有限责任公司 | 具有电流扩展层的光电子半导体器件及其制造方法 |
CN101183702B (zh) * | 2006-11-17 | 2010-06-09 | 夏普株式会社 | 半导体发光元件及其制造方法 |
CN101388430B (zh) * | 2008-10-27 | 2010-06-09 | 厦门乾照光电股份有限公司 | 一种改良电流扩展层结构的高效发光二极管及其制造方法 |
CN102208504A (zh) * | 2011-05-10 | 2011-10-05 | 北京太时芯光科技有限公司 | 一种四元发光二极管及其制备方法 |
CN102832296B (zh) * | 2011-06-16 | 2015-10-28 | 晶元光电股份有限公司 | 发光组件的制造方法 |
CN102832296A (zh) * | 2011-06-16 | 2012-12-19 | 晶元光电股份有限公司 | 发光组件的制造方法 |
CN104112800A (zh) * | 2014-06-26 | 2014-10-22 | 山西飞虹微纳米光电科技有限公司 | 一种采用复合dbr提高亮度的发光二极管及其制备方法 |
WO2019054943A1 (en) * | 2017-09-15 | 2019-03-21 | Nanyang Technological University | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME |
CN110556463A (zh) * | 2018-05-30 | 2019-12-10 | 首尔伟傲世有限公司 | 具有分布布拉格反射器的发光二极管芯片 |
CN110556463B (zh) * | 2018-05-30 | 2022-06-03 | 首尔伟傲世有限公司 | 具有分布布拉格反射器的发光二极管芯片 |
JP2021114594A (ja) * | 2019-08-27 | 2021-08-05 | 株式会社東芝 | 光半導体素子 |
CN112563378A (zh) * | 2020-12-11 | 2021-03-26 | 西安立芯光电科技有限公司 | 一种氧化增光二极管制作方法 |
CN112563378B (zh) * | 2020-12-11 | 2022-02-25 | 西安立芯光电科技有限公司 | 一种氧化增光二极管制作方法 |
Also Published As
Publication number | Publication date |
---|---|
CN100477298C (zh) | 2009-04-08 |
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ASS | Succession or assignment of patent right |
Owner name: XIAMEN SAN'AN ELECTRONICS CO., LTD. Free format text: FORMER OWNER: SAN-AN ELECTRONICS CO., LTD., XIAMEN Effective date: 20071116 |
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C41 | Transfer of patent application or patent right or utility model | ||
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Effective date of registration: 20071116 Address after: 361009 Fujian city of Xiamen Province Lu Ling Road No. 1721 Applicant after: Xiamen San'an Electronics Co.,Ltd. Address before: 361009, Xiamen, Fujian City, Zhejiang Province, wing Ling Kai Kaiyuan science and Technology Park on the third floor Applicant before: Xiamen San'an Electronics Co.,Ltd. |
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ASS | Succession or assignment of patent right |
Owner name: SANAN OPTO-EELECTRICAL SCIENCE CO., LTD., XIAMEN Free format text: FORMER OWNER: XIAMEN SAN'AN ELECTRONICS CO., LTD. Effective date: 20081017 |
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Effective date of registration: 20081017 Address after: Siming District of Xiamen City, Fujian Province, Luling Road No. 1721-1725 post encoding: 361009 Applicant after: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY Co.,Ltd. Address before: Fujian province Xiamen City Luling Road No. 1721 post encoding: 361009 Applicant before: Xiamen San'an Electronics Co.,Ltd. |
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