CN101174588A - 具有电容器的半导体器件的制造方法 - Google Patents
具有电容器的半导体器件的制造方法 Download PDFInfo
- Publication number
- CN101174588A CN101174588A CNA2006101376224A CN200610137622A CN101174588A CN 101174588 A CN101174588 A CN 101174588A CN A2006101376224 A CNA2006101376224 A CN A2006101376224A CN 200610137622 A CN200610137622 A CN 200610137622A CN 101174588 A CN101174588 A CN 101174588A
- Authority
- CN
- China
- Prior art keywords
- etching
- insulating barrier
- layer
- stopping layer
- capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/48—Data lines or contacts therefor
- H10B12/485—Bit line contacts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76816—Aspects relating to the layout of the pattern or to the size of vias or trenches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
- H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/48—Data lines or contacts therefor
- H10B12/482—Bit lines
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (18)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060049007A KR100799125B1 (ko) | 2006-05-30 | 2006-05-30 | 캐패시터를 구비한 반도체 소자의 제조방법 |
KR1020060049007 | 2006-05-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101174588A true CN101174588A (zh) | 2008-05-07 |
CN100539078C CN100539078C (zh) | 2009-09-09 |
Family
ID=38790793
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006101376224A Active CN100539078C (zh) | 2006-05-30 | 2006-10-31 | 具有电容器的半导体器件的制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7396772B2 (zh) |
KR (1) | KR100799125B1 (zh) |
CN (1) | CN100539078C (zh) |
TW (1) | TWI312554B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109148681A (zh) * | 2017-06-16 | 2019-01-04 | 旺宏电子股份有限公司 | 电阻式随机存取存储器及其制造方法 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8304342B2 (en) * | 2006-10-31 | 2012-11-06 | Texas Instruments Incorporated | Sacrificial CMP etch stop layer |
JP2010287853A (ja) * | 2009-06-15 | 2010-12-24 | Elpida Memory Inc | 半導体装置及びその製造方法 |
US10867149B2 (en) | 2014-06-12 | 2020-12-15 | Verizon Media Inc. | User identification through an external device on a per touch basis on touch sensitive devices |
CN105355604B (zh) * | 2015-10-12 | 2018-04-20 | 深超光电(深圳)有限公司 | 薄膜晶体管阵列基板 |
KR20200080944A (ko) * | 2018-12-27 | 2020-07-07 | 에스케이하이닉스 주식회사 | 반도체장치 및 그 제조 방법 |
TWI745054B (zh) | 2020-08-27 | 2021-11-01 | 華邦電子股份有限公司 | 半導體元件及其製造方法 |
US20220199760A1 (en) * | 2020-12-21 | 2022-06-23 | Intel Corporation | Integrated circuit device having backend double-walled capacitors |
TWI762252B (zh) * | 2021-03-24 | 2022-04-21 | 華邦電子股份有限公司 | 記憶體結構及其製造方法 |
US11527537B2 (en) | 2021-05-03 | 2022-12-13 | Winbond Electronics Corp. | Memory structure and manufacturing method thereof |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100233559B1 (ko) * | 1996-06-21 | 1999-12-01 | 김영환 | 디램의 캐패시터 형성방법 |
JP3577195B2 (ja) * | 1997-05-15 | 2004-10-13 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
KR19990055805A (ko) * | 1997-12-27 | 1999-07-15 | 김영환 | 반도체 소자의 캐패시터 형성방법 |
KR100319560B1 (ko) * | 1999-05-03 | 2002-01-05 | 윤종용 | 물리 화학적 연마(cmp) 저지막을 사용한 커패시터 스토리지 전극 형성 방법 |
KR20010057669A (ko) * | 1999-12-23 | 2001-07-05 | 한신혁 | 적층형 캐패시터를 갖는 반도체 장치의 제조 방법 |
KR100331568B1 (ko) * | 2000-05-26 | 2002-04-06 | 윤종용 | 반도체 메모리 소자 및 그 제조방법 |
KR20020065795A (ko) * | 2001-02-07 | 2002-08-14 | 삼성전자 주식회사 | 디램 장치 및 그 형성 방법 |
JP4060572B2 (ja) * | 2001-11-06 | 2008-03-12 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
KR100532435B1 (ko) * | 2003-05-15 | 2005-11-30 | 삼성전자주식회사 | 스토리지 노드 및 저항체를 포함하는 반도체 메모리 소자및 그 제조방법 |
-
2006
- 2006-05-30 KR KR1020060049007A patent/KR100799125B1/ko not_active IP Right Cessation
- 2006-09-19 TW TW095134575A patent/TWI312554B/zh not_active IP Right Cessation
- 2006-10-17 US US11/582,638 patent/US7396772B2/en active Active
- 2006-10-31 CN CNB2006101376224A patent/CN100539078C/zh active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109148681A (zh) * | 2017-06-16 | 2019-01-04 | 旺宏电子股份有限公司 | 电阻式随机存取存储器及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20070281480A1 (en) | 2007-12-06 |
CN100539078C (zh) | 2009-09-09 |
TW200744162A (en) | 2007-12-01 |
TWI312554B (en) | 2009-07-21 |
KR20070115108A (ko) | 2007-12-05 |
KR100799125B1 (ko) | 2008-01-29 |
US7396772B2 (en) | 2008-07-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: 658868N.B. INC. Free format text: FORMER OWNER: HAIRYOKSA SEMICONDUCTOR CO., LTD. Effective date: 20120620 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20120620 Address after: new brunswick Patentee after: 658868N.B. company Address before: Gyeonggi Do Lichuan City, South Korea Patentee before: Hairyoksa Semiconductor Co., Ltd. |
|
C56 | Change in the name or address of the patentee |
Owner name: CONVERSANT INTELLECTUAL PROPERTY N.B.868 INC. Free format text: FORMER NAME: 658868N.B. INC. |
|
CP01 | Change in the name or title of a patent holder |
Address after: new brunswick Patentee after: Covenson wisdom N.B.868 company Address before: new brunswick Patentee before: 658868N.B. company |