CN101141121A - Oscillation frequency fluctuation reduced ring oscillation circuit and IC chip equipped with the circuit - Google Patents
Oscillation frequency fluctuation reduced ring oscillation circuit and IC chip equipped with the circuit Download PDFInfo
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- CN101141121A CN101141121A CNA2006101271311A CN200610127131A CN101141121A CN 101141121 A CN101141121 A CN 101141121A CN A2006101271311 A CNA2006101271311 A CN A2006101271311A CN 200610127131 A CN200610127131 A CN 200610127131A CN 101141121 A CN101141121 A CN 101141121A
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Abstract
The invention discloses a ring shape oscillating circuit that consists of a regulator that is connected between the band gap voltage and the power source access end of the inverter and is used for providing stable band gap voltage for the inverter; a power source absolute current circuit that is connected to the power source access end of the inverter and is used for converting the accessed band gap voltage so as to provide power source absolute current for the inverter; an earth absolute current circuit that is connected with the earth end of the inverter and is used for converting the accessed band gap voltage so as to provide earth absolute current for the inverter. The invention also provides an integrated circuit chip that has ring shape circuit.
Description
Technical field
The present invention relates to semiconductor integrated chip (IC), more specifically, relate to a kind of annular oscillation circuit (Ring Oscillator) that has than the stable oscillation stationary vibration frequency, and the IC chip with this annular oscillation circuit.
Background technology
Multivibrator is a kind of self-maintained circuit.Because there is not stable operating state, multivibrator is also referred to as astable circuit.Specifically, if multivibrator is in 0 state at the beginning, it will change 1 state over to automatically after 0 state stays for some time so, will change 0 state automatically over to again after 1 state stays for some time, and so go round and begin again the output square wave.Multivibrator is used for producing the square wave of certain frequency and amplitude, can be used as clock generator etc. and is applied in micro-control circuit etc.
Fig. 1 shows the circuit diagram of a kind of symmetrical expression multivibrator in the correlation technique, and it is a positive feedback oscillating circuit.
In Fig. 1, G
1And G
2Be two inverters, G
1And G
2Be two coupling capacitances, R
F1And R
F2Be two feedback resistances.As long as choose the resistance of feedback resistance rightly, just can make the quiescent point of inverter be positioned at the break over region of voltage-transfer characteristic.When powering on, the voltage v at capacitor two ends
C1And v
C2Be 0.Suppose that certain disturbance makes v
I1Small positive transition is arranged, so through a positive feedback process, v
I1Saltus step is V rapidly
OH, v
O1Saltus step is V rapidly
OL, v
I2Saltus step is V rapidly
OL, v
O2Saltus step is V rapidly
OH, circuit enters first temporary stable state.Capacitor C
1And C
2Begin charging.C
1The charging current direction identical with reference direction, v
C1Forward increases; C
2The charging current direction opposite with reference direction, v
C2Negative sense increases.Along with v
C1Forward increase v
I2From V
OLRise gradually; Along with v
C2Negative sense increase v
I1From V
OHDescend gradually.Because C
1Through R
1And R
F2Article two, branch road charges and C
2Through R
F1, so a branch road charging is C
1Charging rate is very fast, v
I2Rise to V
THThe time v
I1Also do not drop to V
THv
I2Rise to V
THMake v
O2Saltus step is V
OLIn theory, v
O2Downward saltus step V
OH-V
OL, v
I1Also with downward saltus step V
OH-V
OLConsider G
1The influence of input clamp diode, v
I1Jump to V at most
IKv
I1Drop to V
IKMake v
O1Saltus step is V
OH, this makes v again
I2From V
THSaltus step V makes progress
OH-V
OL, i.e. v
I2Become V
TH+ V
OH-V
OL, circuit enters second temporary stable state.C
1Through R
F2, a branch road reverse charging (reverse charging again of discharging in fact earlier), v
I2Descend gradually.C
2Through R
1And R
F1Article two, branch road reverse charging (reverse charging again of discharging in fact earlier), v
I1Rise gradually.v
I1The rate of climb greater than v
I2Decrease speed.Work as v
I1Rise to V
THThe time, circuit enters first temporary stable state again.After this, circuit will vibration back and forth between two temporary stable states.
Quartz crystal has superior frequency-selecting performance.Quartz crystal is introduced common multivibrator just can constitute quartz crystal multivibrator with upper frequency stability.
Fig. 2 shows the circuit diagram of a kind of quartz crystal symmetrical expression multivibrator in the correlation technique.
Common multivibrator is a kind of square-wave generator, and the back output frequency that powers on is the square wave of f.According to the Fourier analysis theory, frequency is that the square wave of f can resolve into infinite a plurality of component sine waves, the frequency of component sine waves be nf (n=1,2,3 ...), if the series resonance frequency of quartz crystal is f
0, having only frequency so is f
0Component sine waves can pass through quartz crystal (i component sine waves,
), form positive feedback, and other component sine waves can't be passed through quartz crystal.Frequency is f
0Component sine waves to be converted to frequency by inverter be f
0Square wave.Because the frequency of oscillation of quartz crystal multivibrator only depends on the parameter of quartz crystal itself, so less demanding to the circuit element beyond the quartz crystal.Its biggest advantage is that precision is very high, and the frequency of oscillation of quartz crystal symmetrical expression multivibrator depends on the intrinsic physical property of quartz crystal, so have very high frequency stability.
In the circuit of Fig. 2, adopt quartz crystal as tuned cell, although its frequency accuracy is very high, cause circuit devcie too much, increased manufacturing cost on the one hand, volume is too big on the other hand, so be unfavorable for being integrated among the IC.
Yet in actual applications, except some environmental factors, the choice criteria in clock source is usually according to four primary conditions: precision, supply power voltage, size and noise.The communication standard that accuracy requirement depends on application-specific usually and adopted.For example, high speed USB needs ± 0.25% overall clock accuracy.By contrast, the system that need not PERCOM peripheral communication may only need 5%, 10% even 20% clock source precision just can work well.For this reason, in correlation technique, proposed with crystal and ceramic resonator in the alternative most of microcontroller circuits of silicon oscillator.In order to simplify symmetrical expression multivibrator circuit structure illustrated in figures 1 and 2, a kind of asymmetric multivibrator circuit has been proposed in the correlation technique.Fig. 3 shows the circuit diagram of a kind of asymmetric multivibrator circuit in the correlation technique.
The asymmetric multivibrator is the reduced form of symmetrical expression multivibrator.This circuit has only a feedback resistance R
FWith a coupling capacitance C.Feedback resistance R
FMake G
1Quiescent point be positioned at the break over region of voltage-transfer characteristic, in other words, when static, G
1Incoming level approximate V
TH, G
1Output level also approximate V
THBecause G
1Output be exactly G
2Input, so G
2Also be forced to be operated in the break over region of voltage-transfer characteristic when static.
In order further to simplify ring oscillator circuit structure shown in Figure 3, a kind of ring oscillator circuit has been proposed in the correlation technique to be applied among the IC.Fig. 4 shows the circuit diagram of a kind of ring oscillator circuit in the correlation technique.
Ring oscillator is not a regenerative circuit, but the negative-feedback circuit with delay link, it has carried out further simplification to the asymmetric multivibrator circuit, is that the asymmetric multivibrator is the reduced form of symmetrical expression multivibrator.
Fig. 5 shows the circuit diagram according to the inverter of an embodiment of correlation technique.
As shown in Figure 5, CMOS inverter circuit 11 is respectively by PMOS transistor P
1With nmos pass transistor N
1The formation that is connected in series, above-mentioned two transistorized each grids are as input, and above-mentioned two transistorized each drain electrodes offer above-mentioned PMOS transistor P as output with power source voltage Vcc
1Source electrode, above-mentioned nmos pass transistor N
1Source electrode and earthing potential Vss end be connected.
At ring oscillator shown in Figure 4, can be made into silicon device at an easy rate, and be integrated in the middle of the IC.For the clock request of most of microcontrollers, the made silicon oscillator of the ring oscillator shown in the utilization is a kind of simply and effectively solution.
On the one hand, the silicon oscillator does not also rely on the mechanical resonance characteristic and obtains frequency of oscillation, and is based on the RC time constant of an inside.Such design makes silicon device insensitive for external mechanical influence.And different with traditional oscillators is not have exposed high-impedance node.So the silicon oscillator can bear bigger humidity and EMI influence.
On the other hand, the silicon oscillator does not need to mate meticulously timing element or strict circuit board wiring.If replace crystal or ceramic resonator with the silicon oscillator, at first can remove all elements relevant with oscillating circuit.This generally includes one to two resistance and two electric capacity (if they are not comprised in the resonator packages).And the supply power voltage typical range of microcontroller clock is 1V to 5.5V, and the typical power supply voltage range of silicon oscillator is 2.4V to 5.5V, just in time falls in this scope.The material of silicon oscillator can be identical with the material of the IC of its income, and can adopt identical manufacturing process.So the silicon ring oscillator has than crystal and ceramic resonator advantage littler and more easy to manufacture and use and with low cost.
Yet clocking noise is subjected to the influence of many factors, comprises noise, power supply noise, wiring board wiring and intrinsic (or quality factor " Q ") such as noise suppression features of oscillating element of amplifier.
Yet in the ring oscillator of correlation technique, outer member has only an electrical power by-pass electric capacity usually.
Fig. 6 shows the circuit diagram according to the ring oscillator of an embodiment of correlation technique.
Wherein, odd number CMOS inverter circuit 11 is connected in series, and is connected with capacitor 12 between each CMOS inverter circuit 11 output and ground, and the output signal of last inverter circuit 11 is fed back to the input of first inverter circuit.
The frequency of oscillation of this oscillator is by the time constant CR decision at the conducting resistance R of the capacity C of each intersegmental capacitor 12 and CMOS inverter circuit 11.
Yet, the conducting resistance R of above-mentioned CMOS inverter circuit 11 is because be subjected to the influence of the extreme situation (cornercase) of supply voltage, temperature and CMOS inverter circuit 11 to a great extent, so when the fluctuation of the extreme situation of supply voltage, temperature and CMOS inverter circuit 11 is very big, can cause the frequency of oscillation fluctuation of annular oscillation circuit very big.For example, at mains fluctuations is ± 10%, temperature is that-40 ℃ to 120 ℃, device extreme situation (corner case) are FF (Fast PMOS Fast NMOS, the quick quick NMOS of PMOS), TT (Typical PMOS Typical NMOS, the common NMOS of common PMOS) and SS (Slow PMOS Slow NMOS, PMOS NMOS at a slow speed at a slow speed), the frequency of oscillation fluctuating range of conventional ring oscillator has reached 50%.Because the frequency of oscillation fluctuating range is too big, has caused having a strong impact on its application in IC.
Therefore, people need a kind of solution that improves annular oscillation circuit frequency of oscillation stability, can solve the problem in the above-mentioned correlation technique.
Summary of the invention
The present invention aims to provide to have than the annular oscillation circuit of stable oscillation stationary vibration frequency and the IC chip with this annular oscillation circuit, can reduce the influence of mains fluctuations etc., to export stable frequency of oscillation.
According to an aspect of the present invention, a kind of annular oscillation circuit is provided, be used to produce the multi-harmonic-oscillations ripple, it comprises the odd number inverter that is connected in series, the output of last inverter is connected to the input of first inverter, this annular oscillation circuit comprise following one of at least: pressurizer, it is connected between the power access end of band gap voltage and inverter, being used for provides stable band gap voltage to inverter; And the absolute current circuit, be used for the band gap voltage that inserts is changed, to provide absolute current to inverter.
In above-mentioned annular oscillation circuit, the absolute current circuit comprise following one of at least: power supply absolute current circuit, the power access end that it is connected on inverter is used for the band gap voltage that inserts is changed, so that the power supply absolute current to be provided to inverter; And ground connection absolute current circuit, the earth terminal that it is connected on inverter is used for the band gap voltage that inserts is changed, so that the ground connection absolute current to be provided to inverter.
In above-mentioned annular oscillation circuit, inverter is a transistor circuit, is formed in the integrated circuit (IC) chip.
In above-mentioned annular oscillation circuit, inverter is the CMOS inverter circuit, comprise PMOS transistor and nmos pass transistor, above-mentioned transistorized each grid is as input, above-mentioned transistorized each drain electrode is as output, supply voltage is offered the transistorized source electrode of above-mentioned PMOS, and the source electrode of above-mentioned nmos pass transistor is connected with the earthing potential end.
In above-mentioned annular oscillation circuit, the extreme situation of inverter comprises FF, TT and SS.
In above-mentioned annular oscillation circuit, power supply absolute current circuit is a transistor circuit, is formed in the integrated circuit (IC) chip.
In above-mentioned annular oscillation circuit, power supply absolute current circuit is a MOS transistor, and its grid inserts band gap voltage as input, and it drains and is connected to the power access end of inverter as output, and its source electrode is connected to the output of pressurizer.
In above-mentioned annular oscillation circuit, the power supply absolute current is that 24 μ A are to 26 μ A.
In above-mentioned annular oscillation circuit, ground connection absolute current circuit is a transistor circuit, is formed in the integrated circuit (IC) chip.
In above-mentioned annular oscillation circuit, ground connection absolute current circuit is a MOS transistor, and its grid inserts band gap voltage as input, its source ground, and its drain electrode is connected to the earth terminal of inverter.
In above-mentioned annular oscillation circuit, the ground connection absolute current is that 24 μ A are to 26 μ A.
In above-mentioned annular oscillation circuit, pressurizer is a transistor circuit, is formed in the integrated circuit (IC) chip.
In above-mentioned annular oscillation circuit, pressurizer is a voltage stabilizing didoe.
In above-mentioned annular oscillation circuit, inverter, pressurizer, power supply absolute current circuit and ground connection absolute current circuit are transistor circuit, are formed in the same integrated circuit (IC) chip.
According to a further aspect in the invention, provide in a kind of integrated circuit (IC) chip, comprised above-mentioned annular oscillation circuit.
According to a further aspect in the invention, provide a kind of integrated circuit (IC) chip, comprised above-described any one annular oscillation circuit.
By technique scheme, the present invention has realized following technique effect:
Through various tests, at mains fluctuations is ± 2.5%, temperature is that-40 ℃ to 120 ℃, device extreme situation (corner case) are FF, TT and SS, adopt ring oscillator of the present invention frequency of oscillation fluctuating range from 50% narrow down to ± 12.5%.
Other features and advantages of the present invention will be set forth in the following description, and, partly from specification, become apparent, perhaps understand by implementing the present invention.Purpose of the present invention and other advantages can realize and obtain by specifically noted structure in the specification of being write, claims and accompanying drawing.
Description of drawings
Accompanying drawing described herein is used to provide further understanding of the present invention, constitutes the application's a part, and illustrative examples of the present invention and explanation thereof are used to explain the present invention, do not constitute improper qualification of the present invention.In the accompanying drawings:
Fig. 1 shows the circuit diagram of a kind of symmetrical expression multivibrator in the correlation technique;
Fig. 2 shows the circuit diagram of a kind of quartz crystal symmetrical expression multivibrator in the correlation technique;
Fig. 3 shows the circuit diagram of a kind of asymmetric multivibrator circuit in the correlation technique;
Fig. 4 shows the circuit diagram of a kind of ring oscillator circuit in the correlation technique;
Fig. 5 shows the circuit diagram according to the inverter of an embodiment of correlation technique;
Fig. 6 shows the circuit diagram according to the ring oscillator of an embodiment of correlation technique;
Fig. 7 shows the circuit diagram according to annular oscillation circuit of the present invention;
Fig. 8 shows the circuit diagram according to the inverter of another embodiment of correlation technique;
Fig. 9 shows the circuit diagram according to the inverter of another embodiment of correlation technique;
Figure 10 shows the circuit diagram of absolute current circuit according to an embodiment of the invention;
Figure 11 shows the circuit diagram according to the voltage stabilizing circuit of an embodiment of correlation technique; And
Figure 12 shows the frequency test curve chart of annular oscillation circuit according to an embodiment of the invention.
Embodiment
Below with reference to the accompanying drawings and in conjunction with the embodiments, describe the present invention in detail.
According to the present invention, a kind of annular oscillation circuit is provided, be used to produce the multi-harmonic-oscillations ripple, it comprises the odd number inverter that is connected in series, the output of last inverter is connected to the input of first inverter, and annular oscillation circuit is characterised in that, comprise following one of at least: pressurizer, it is connected between the power access end of band gap voltage and inverter, and being used for provides stable band gap voltage to inverter; And the absolute current circuit, be used for the band gap voltage that inserts is changed, to provide absolute current to inverter.
Alternatively, the absolute current circuit comprise following one of at least: power supply absolute current circuit, the power access end that it is connected on inverter is used for the band gap voltage that inserts is changed, so that the power supply absolute current to be provided to inverter; And ground connection absolute current circuit, the earth terminal that it is connected on inverter is used for the band gap voltage that inserts is changed, so that the ground connection absolute current to be provided to inverter.
Alternatively, inverter is a transistor circuit, is formed in the integrated circuit (IC) chip.
Alternatively, inverter is the CMOS inverter circuit, comprise PMOS transistor and nmos pass transistor, above-mentioned transistorized each grid is as input, above-mentioned transistorized each drain electrode is as output, supply voltage is offered the transistorized source electrode of above-mentioned PMOS, and the source electrode of above-mentioned nmos pass transistor is connected with the earthing potential end.
Alternatively, the extreme situation of inverter comprises FF, TT and SS.
Alternatively, power supply absolute current circuit is a transistor circuit, is formed in the integrated circuit (IC) chip.
Alternatively, power supply absolute current circuit is a MOS transistor, and its grid inserts band gap voltage as input, and it drains and is connected to the power access end of inverter as output, and its source electrode is connected to the output of pressurizer.
Alternatively, the power supply absolute current is that 24 μ A are to 26 μ A.
Alternatively, ground connection absolute current circuit is a transistor circuit, is formed in the integrated circuit (IC) chip.
Alternatively, ground connection absolute current circuit is a MOS transistor, and its grid inserts band gap voltage as input, its source ground, and its drain electrode is connected to the earth terminal of inverter.
Alternatively, the ground connection absolute current is that 24 μ A are to 26 μ A.
Alternatively, pressurizer is a transistor circuit, is formed in the integrated circuit (IC) chip.
Alternatively, pressurizer is a voltage stabilizing didoe.
Alternatively, inverter, pressurizer, power supply absolute current circuit and ground connection absolute current circuit are transistor circuit, are formed in the same integrated circuit (IC) chip.
According to the present invention, a kind of integrated circuit (IC) chip also is provided, comprise above-mentioned annular oscillation circuit.
Fig. 7 shows the circuit diagram according to annular oscillation circuit of the present invention.
Be subject to the problem of the extreme situation influence of supply voltage, temperature and CMOS inverter circuit 11 at the annular oscillation circuit of correlation technique annular oscillation circuit for example shown in Figure 5, for more stable frequency of oscillation is provided, as shown in Figure 7, the present invention proposes to provide stabilized power supply (Stable Power Supply) and absolute current (Absolute Current) to each inverter in the annular oscillation circuit.In order to provide stabilized power supply to each inverter, should before the input positive pole of inverter, insert pressurizer (regulator), be used for band gap voltage (Bandgap Voltage) is offered inverter through after the voltage stabilizing.Further, can provide absolute current, adopt the absolute current circuit to replace capacitor shown in Figure 6 to each inverter.
Specifically, annular oscillation circuit 200 according to the present invention comprises:
Further, in order to provide absolute current to each inverter, annular oscillation circuit 200 according to the present invention comprises alternatively:
Power supply absolute current circuit 26, the power access end that it is connected on inverter 22 is used for the band gap voltage that inserts is changed, and provides the power supply absolute current to inverter 22.
Alternatively, annular oscillation circuit 200 according to the present invention comprises:
Ground connection absolute current circuit 28, the earth terminal that it is connected on inverter 22 is used for the band gap voltage that inserts is changed, and provides the ground connection absolute current to inverter 22.
By aforesaid structure, each inverter in annular oscillation circuit 200 provides stable band gap voltage and power supply absolute current and ground connection absolute current, thereby has avoided the influence of the extreme situation of supply voltage, temperature and CMOS inverter circuit 11.
Should be understood that for a person skilled in the art the inverter 22 in the said structure, pressurizer 24, power supply absolute current circuit 26 and ground connection absolute current circuit 28 concrete structure separately all are known, can realize at an easy rate.In order to further specify the present invention, describe in detail according to embodiments of the invention below in conjunction with accompanying drawing.
Should be understood that Fig. 5, Fig. 8 and inverter circuit shown in Figure 9 only are used to illustrate the present invention, rather than limitation of the present invention, those skilled in the art can make various changes to this circuit at an easy rate in spiritual scope of the present invention.
Figure 10 shows the circuit diagram of absolute current circuit 300 according to an embodiment of the invention.As shown in figure 10, power supply absolute current circuit 26 and ground connection absolute current circuit 28 are made of PMOS 26 and NMOS 28 respectively, and the absolute current Ip that flows through PMOS 26 constitutes the power supply absolute current, and flows through the absolute current In formation ground connection absolute current of NMOS 28.It should be noted that the resistance 30 in this circuit is off-chip capacitive resistances, so be easy to precision is controlled in 1%; And other elements in this circuit are because be transistor all, so be easy to be integrated in the chip.
Specifically, power supply absolute current circuit is the PMOS transistor, and its grid inserts band gap voltage as input, and it drains and is connected to the power access end of the inverter 22 of oscillator as output, and its source electrode is connected to the output of pressurizer.Certainly, the present invention is not limited to the PMOS transistor.
Specifically, ground connection absolute current circuit is a nmos pass transistor, and its grid inserts band gap voltage as input, its source ground, and its drain electrode is connected to the earth terminal of the inverter 22 of oscillator.Certainly, the present invention is not with respect to nmos pass transistor.
Should be understood that absolute current circuit 300 shown in Figure 10 only is used to illustrate the present invention, rather than limitation of the present invention, those skilled in the art can make various changes to this circuit at an easy rate in spiritual scope of the present invention.
As for pressurizer 24, those skilled in the art's use-case realizations such as diode circuit of voltage regulation as shown in figure 11 at an easy rate repeat no more here.
Above-mentioned inverter 22, pressurizer 24, power supply absolute current circuit 24 and ground connection absolute current circuit 28 all can be transistor circuit, therefore can be formed in the same integrated circuit (IC) chip.
Further,, annular oscillation circuit of the present invention can be formed in the integrated circuit (IC) chip, that is, can provide the integrated circuit (IC) chip that has according to annular oscillation circuit of the present invention according to the present invention.
To specify the effect that adopts embodiments of the invention to realize below.Figure 12 shows the frequency test curve chart of annular oscillation circuit according to an embodiment of the invention.
In according to one embodiment of present invention, simulated conditions are: stabilizer output voltage (regulator output voltage): 1.94V is to 2.06V, Ip=In=24 μ A is to 26 μ A, temperature is-40 ℃ to 120 ℃, device extreme situation (corner case) is FF, TT and SS, and nominal is output as 24.6MHz.
As shown in figure 12, normal distribution is satisfied in the distribution of its output frequency, satisfies 3sigma at 21.58MHz to the distribution in the 27.63MHZ.Specifically, analog result is: under above-mentioned all situations, according to the ring oscillator of this embodiment for all chips all be 21.58MHz to 27.63MHZ, i.e. 3sigma.
For one of them chip, when temperature was-40 ℃ to 120 ℃, the ring oscillator 24.21MHz of this embodiment promptly ± 3% (fell into the 3sigma scope) to 25.61MHz.
Through various tests, at mains fluctuations is ± 2.5%, temperature is that-40 ℃ to 120 ℃, device extreme situation (corner case) are FF, TT and SS, adopt ring oscillator of the present invention frequency of oscillation fluctuating range from 50% narrow down to ± 12.5%.
The above is the preferred embodiments of the present invention only, is not limited to the present invention, and for a person skilled in the art, the present invention can have various changes and variation.Within the spirit and principles in the present invention all, any modification of being done, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (15)
1. annular oscillation circuit, be used to produce the multi-harmonic-oscillations ripple, it comprises the odd number inverter that is connected in series, and the output of last described inverter is connected to the input of first described inverter, described annular oscillation circuit is characterised in that, comprise following one of at least:
Pressurizer, it is connected between the power access end of band gap voltage and described inverter, and being used for provides stable band gap voltage to described inverter; And
The absolute current circuit is used for the band gap voltage that inserts is changed, to provide absolute current to described inverter.
2. annular oscillation circuit according to claim 1 is characterized in that, described absolute current circuit comprise following one of at least:
Power supply absolute current circuit, the power access end that it is connected on described inverter is used for the band gap voltage that inserts is changed, to provide the power supply absolute current to described inverter; And
Ground connection absolute current circuit, the earth terminal that it is connected on described inverter is used for the band gap voltage that inserts is changed, to provide the ground connection absolute current to described inverter.
3. annular oscillation circuit according to claim 1 and 2 is characterized in that inverter is a transistor circuit, is formed in the integrated circuit (IC) chip.
4. annular oscillation circuit according to claim 3, it is characterized in that, described inverter is the CMOS inverter circuit, comprise PMOS transistor and nmos pass transistor, above-mentioned transistorized each grid is as input, above-mentioned transistorized each drain electrode offers the transistorized source electrode of above-mentioned PMOS as output with supply voltage, and the source electrode of above-mentioned nmos pass transistor is connected with the earthing potential end.
5. annular oscillation circuit according to claim 3 is characterized in that the extreme situation of described inverter comprises FF, TT and SS.
6. annular oscillation circuit according to claim 2 is characterized in that, described power supply absolute current circuit is a transistor circuit, is formed in the integrated circuit (IC) chip.
7. annular oscillation circuit according to claim 6, it is characterized in that, described power supply absolute current circuit is a MOS transistor, its grid inserts band gap voltage as input, it drains and is connected to the described power access end of described inverter as output, and its source electrode is connected to the output of described pressurizer.
8. annular oscillation circuit according to claim 6 is characterized in that, described power supply absolute current is that 24 μ A are to 26 μ A.
9. annular oscillation circuit according to claim 2 is characterized in that, described ground connection absolute current circuit is a transistor circuit, is formed in the integrated circuit (IC) chip.
10. annular oscillation circuit according to claim 9 is characterized in that, described ground connection absolute current circuit is a MOS transistor, and its grid inserts band gap voltage as input, its source ground, and its drain electrode is connected to the described earth terminal of described inverter.
11. annular oscillation circuit according to claim 9 is characterized in that, described ground connection absolute current is that 24 μ A are to 26 μ A.
12. annular oscillation circuit according to claim 1 and 2 is characterized in that, described pressurizer is a transistor circuit, is formed in the integrated circuit (IC) chip.
13. annular oscillation circuit according to claim 1 and 2 is characterized in that, described pressurizer is a voltage stabilizing didoe.
14. according to each described annular oscillation circuit in the claim 1 to 14, it is characterized in that, described inverter, described pressurizer, described power supply absolute current circuit and described ground connection absolute current circuit are transistor circuit, are formed in the same integrated circuit (IC) chip.
15. an integrated circuit (IC) chip is characterized in that, comprises each described annular oscillation circuit in the claim 1 to 14.
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| CN105071774A (en) * | 2015-08-14 | 2015-11-18 | 广西师范大学 | Separate asymmetric multivibrator circuit system |
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| CN109474260A (en) * | 2019-01-11 | 2019-03-15 | 成都信息工程大学 | A kind of adjustable oscillator of number |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP3703516B2 (en) * | 1994-04-25 | 2005-10-05 | セイコーインスツル株式会社 | Oscillator circuit |
| CN100353661C (en) * | 2002-10-31 | 2007-12-05 | 上海华虹集成电路有限责任公司 | Intermediate frequency reference source |
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2006
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| CN103941178A (en) * | 2014-04-23 | 2014-07-23 | 北京大学 | Detection circuit for detecting process fluctuations in integrated circuit manufacturing process |
| CN105071774A (en) * | 2015-08-14 | 2015-11-18 | 广西师范大学 | Separate asymmetric multivibrator circuit system |
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| CN105609093B (en) * | 2015-12-23 | 2019-06-21 | 中国电子科技集团公司第五十研究所 | The swept-frequency signal generating unit and method for generation of low-power consumption high-decibel warning device |
| CN109474260A (en) * | 2019-01-11 | 2019-03-15 | 成都信息工程大学 | A kind of adjustable oscillator of number |
| CN109474260B (en) * | 2019-01-11 | 2024-05-24 | 成都信息工程大学 | Digital adjustable oscillator |
| CN110071704A (en) * | 2019-04-26 | 2019-07-30 | 成都锐成芯微科技股份有限公司 | A kind of annular RC pierce circuit |
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| Publication number | Publication date |
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| CN101141121B (en) | 2010-08-11 |
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