CN101120416A - 对非易失性电荷存储存储器单元编程的衬底电子注入技术 - Google Patents
对非易失性电荷存储存储器单元编程的衬底电子注入技术 Download PDFInfo
- Publication number
- CN101120416A CN101120416A CNA2005800440693A CN200580044069A CN101120416A CN 101120416 A CN101120416 A CN 101120416A CN A2005800440693 A CNA2005800440693 A CN A2005800440693A CN 200580044069 A CN200580044069 A CN 200580044069A CN 101120416 A CN101120416 A CN 101120416A
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- China
- Prior art keywords
- memory cell
- voltage
- memory cells
- programming
- drain region
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/12—Programming voltage switching circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Abstract
Description
Claims (17)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/021,193 | 2004-12-23 | ||
US11/021,193 US6980471B1 (en) | 2004-12-23 | 2004-12-23 | Substrate electron injection techniques for programming non-volatile charge storage memory cells |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101120416A true CN101120416A (zh) | 2008-02-06 |
CN100547687C CN100547687C (zh) | 2009-10-07 |
Family
ID=35482645
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005800440693A Active CN100547687C (zh) | 2004-12-23 | 2005-08-05 | 用于选择性地编程存储单元的方法及可再编程非易失性存储器*** |
Country Status (9)
Country | Link |
---|---|
US (3) | US6980471B1 (zh) |
EP (1) | EP1829044B1 (zh) |
JP (1) | JP4195906B2 (zh) |
KR (1) | KR101018667B1 (zh) |
CN (1) | CN100547687C (zh) |
AT (1) | ATE415687T1 (zh) |
DE (1) | DE602005011333D1 (zh) |
TW (1) | TWI391935B (zh) |
WO (1) | WO2006071282A1 (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010081310A1 (zh) * | 2008-12-30 | 2010-07-22 | 上海宏力半导体制造有限公司 | 共享字线的分栅式闪存 |
CN102298971A (zh) * | 2011-08-29 | 2011-12-28 | 南京大学 | 一种非挥发性快闪存储器高密度多值存储的操作方法 |
CN106537509A (zh) * | 2014-07-23 | 2017-03-22 | 纳姆实验有限责任公司 | 电荷存储铁电存储器混合体和擦除方案 |
CN109584921A (zh) * | 2013-10-31 | 2019-04-05 | 爱思开海力士有限公司 | 半导体存储器件及其擦除方法 |
CN109643714A (zh) * | 2016-08-31 | 2019-04-16 | 美光科技公司 | 混合式存储器装置 |
CN110808078A (zh) * | 2014-12-17 | 2020-02-18 | 慧荣科技股份有限公司 | 将数据写入一闪存单元的方法以及控制装置 |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6917544B2 (en) * | 2002-07-10 | 2005-07-12 | Saifun Semiconductors Ltd. | Multiple use memory chip |
US6980471B1 (en) * | 2004-12-23 | 2005-12-27 | Sandisk Corporation | Substrate electron injection techniques for programming non-volatile charge storage memory cells |
KR100680462B1 (ko) * | 2005-04-11 | 2007-02-08 | 주식회사 하이닉스반도체 | 비휘발성 메모리 장치 및 그것의 핫 일렉트론 프로그램디스터브 방지방법 |
US7372098B2 (en) * | 2005-06-16 | 2008-05-13 | Micron Technology, Inc. | Low power flash memory devices |
JP2007035214A (ja) * | 2005-07-29 | 2007-02-08 | Renesas Technology Corp | 不揮発性半導体記憶装置 |
US7631245B2 (en) * | 2005-09-26 | 2009-12-08 | Sandisk Il Ltd. | NAND flash memory controller exporting a NAND interface |
US8291295B2 (en) | 2005-09-26 | 2012-10-16 | Sandisk Il Ltd. | NAND flash memory controller exporting a NAND interface |
US7362610B1 (en) * | 2005-12-27 | 2008-04-22 | Actel Corporation | Programming method for non-volatile memory and non-volatile memory-based programmable logic device |
US7436708B2 (en) * | 2006-03-01 | 2008-10-14 | Micron Technology, Inc. | NAND memory device column charging |
US20080046630A1 (en) * | 2006-08-21 | 2008-02-21 | Sandisk Il Ltd. | NAND flash memory controller exporting a logical sector-based interface |
US20080046641A1 (en) * | 2006-08-21 | 2008-02-21 | Sandisk Il Ltd. | NAND flash memory controller exporting a logical sector-based interface |
US7961511B2 (en) * | 2006-09-26 | 2011-06-14 | Sandisk Corporation | Hybrid programming methods and systems for non-volatile memory storage elements |
US8189397B2 (en) * | 2008-01-08 | 2012-05-29 | Spansion Israel Ltd | Retention in NVM with top or bottom injection |
KR20090120205A (ko) * | 2008-05-19 | 2009-11-24 | 삼성전자주식회사 | 플래시 메모리 장치 및 그것의 동작 방법 |
WO2009154799A1 (en) * | 2008-06-20 | 2009-12-23 | Aplus Flash Technology, Inc. | An apparatus and method for inhibiting excess leakage current in unselected nonvolatile memory cells in an array |
JP5462461B2 (ja) * | 2008-09-30 | 2014-04-02 | 株式会社東芝 | 不揮発性半導体記憶装置及びその駆動方法 |
US8316201B2 (en) * | 2008-12-18 | 2012-11-20 | Sandisk Il Ltd. | Methods for executing a command to write data from a source location to a destination location in a memory device |
US8692310B2 (en) | 2009-02-09 | 2014-04-08 | Spansion Llc | Gate fringing effect based channel formation for semiconductor device |
JP2011023705A (ja) * | 2009-06-18 | 2011-02-03 | Toshiba Corp | 不揮発性半導体記憶装置 |
US8325529B2 (en) * | 2009-08-03 | 2012-12-04 | Sandisk Technologies Inc. | Bit-line connections for non-volatile storage |
JP5025703B2 (ja) * | 2009-09-25 | 2012-09-12 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US8443263B2 (en) * | 2009-12-30 | 2013-05-14 | Sandisk Technologies Inc. | Method and controller for performing a copy-back operation |
US8595411B2 (en) | 2009-12-30 | 2013-11-26 | Sandisk Technologies Inc. | Method and controller for performing a sequence of commands |
US8531886B2 (en) | 2010-06-10 | 2013-09-10 | Macronix International Co., Ltd. | Hot carrier programming in NAND flash |
US8947939B2 (en) | 2010-09-30 | 2015-02-03 | Macronix International Co., Ltd. | Low voltage programming in NAND flash |
US8842479B2 (en) | 2011-10-11 | 2014-09-23 | Macronix International Co., Ltd. | Low voltage programming in NAND flash with two stage source side bias |
US8942034B2 (en) | 2013-02-05 | 2015-01-27 | Qualcomm Incorporated | System and method of programming a memory cell |
US9972391B2 (en) | 2014-12-17 | 2018-05-15 | Micron Technology, Inc. | Apparatus, systems, and methods to operate a memory |
US9449707B2 (en) | 2014-12-19 | 2016-09-20 | Freescale Semiconductor, Inc. | Systems and methods to mitigate program gate disturb in split-gate flash cell arrays |
CN105428363B (zh) * | 2015-11-09 | 2017-10-27 | 中国人民解放军国防科学技术大学 | 一种电可擦除编程非挥发性存储器及操作方法 |
SG10201701689UA (en) * | 2016-03-18 | 2017-10-30 | Semiconductor Energy Lab | Semiconductor device, semiconductor wafer, and electronic device |
JP2018022543A (ja) * | 2016-08-05 | 2018-02-08 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US10896979B2 (en) * | 2017-09-28 | 2021-01-19 | International Business Machines Corporation | Compact vertical injection punch through floating gate analog memory and a manufacture thereof |
CN112201295B (zh) * | 2020-09-11 | 2021-09-17 | 中天弘宇集成电路有限责任公司 | Nand闪存编程方法 |
CN112201286B (zh) * | 2020-09-11 | 2021-06-18 | 中天弘宇集成电路有限责任公司 | 快闪存储器的编程方法 |
JP2023139826A (ja) * | 2022-03-22 | 2023-10-04 | キオクシア株式会社 | 基板及びメモリシステム |
Family Cites Families (72)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2645585B2 (ja) * | 1989-03-10 | 1997-08-25 | 工業技術院長 | 半導体不揮発性メモリ及びその書き込み方法 |
JPS4844581B1 (zh) * | 1969-03-15 | 1973-12-25 | ||
JPS5321984B2 (zh) * | 1973-07-13 | 1978-07-06 | ||
US4163985A (en) * | 1977-09-30 | 1979-08-07 | The United States Of America As Represented By The Secretary Of The Air Force | Nonvolatile punch through memory cell with buried n+ region in channel |
JPS5864068A (ja) * | 1981-10-14 | 1983-04-16 | Agency Of Ind Science & Technol | 不揮発性半導体メモリの書き込み方法 |
JPS59111370A (ja) | 1982-12-16 | 1984-06-27 | Seiko Instr & Electronics Ltd | 不揮発性半導体メモリ |
JPS59161873A (ja) * | 1983-03-07 | 1984-09-12 | Agency Of Ind Science & Technol | 半導体不揮発性メモリ |
JPS6317241A (ja) | 1986-07-08 | 1988-01-25 | Sumitomo Electric Ind Ltd | 光フアイバの製造方法及び装置 |
JPS63172471A (ja) | 1987-01-12 | 1988-07-16 | Agency Of Ind Science & Technol | 不揮発性メモリへの書き込み方法 |
US5095344A (en) | 1988-06-08 | 1992-03-10 | Eliyahou Harari | Highly compact eprom and flash eeprom devices |
US5043940A (en) | 1988-06-08 | 1991-08-27 | Eliyahou Harari | Flash EEPROM memory systems having multistate storage cells |
JP2529885B2 (ja) * | 1989-03-10 | 1996-09-04 | 工業技術院長 | 半導体メモリ及びその動作方法 |
US5070032A (en) | 1989-03-15 | 1991-12-03 | Sundisk Corporation | Method of making dense flash eeprom semiconductor memory structures |
EP0393737B1 (en) | 1989-03-31 | 1995-06-07 | Koninklijke Philips Electronics N.V. | Electrically-programmable semiconductor memories |
US5216269A (en) | 1989-03-31 | 1993-06-01 | U.S. Philips Corp. | Electrically-programmable semiconductor memories with buried injector region |
US5172338B1 (en) | 1989-04-13 | 1997-07-08 | Sandisk Corp | Multi-state eeprom read and write circuits and techniques |
EP0399261B1 (en) | 1989-05-24 | 1995-03-15 | Texas Instruments Incorporated | Band-to-band induced substrate hot electron injection |
US5343063A (en) | 1990-12-18 | 1994-08-30 | Sundisk Corporation | Dense vertical programmable read only memory cell structure and processes for making them |
US5739569A (en) * | 1991-05-15 | 1998-04-14 | Texas Instruments Incorporated | Non-volatile memory cell with oxide and nitride tunneling layers |
JPH0559955U (ja) * | 1992-01-09 | 1993-08-06 | 株式会社村田製作所 | 圧電共振器 |
US5313421A (en) | 1992-01-14 | 1994-05-17 | Sundisk Corporation | EEPROM with split gate source side injection |
US5315541A (en) | 1992-07-24 | 1994-05-24 | Sundisk Corporation | Segmented column memory array |
US5555204A (en) | 1993-06-29 | 1996-09-10 | Kabushiki Kaisha Toshiba | Non-volatile semiconductor memory device |
KR0169267B1 (ko) | 1993-09-21 | 1999-02-01 | 사토 후미오 | 불휘발성 반도체 기억장치 |
US5573449A (en) * | 1994-03-16 | 1996-11-12 | The Gleason Works | Threaded grinding wheel, method of dressing, and grinding a workpiece therewith |
US5661053A (en) | 1994-05-25 | 1997-08-26 | Sandisk Corporation | Method of making dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacers |
US5594685A (en) * | 1994-12-16 | 1997-01-14 | National Semiconductor Corporation | Method for programming a single EPROM or flash memory cell to store multiple bits of data that utilizes a punchthrough current |
US5808937A (en) * | 1994-12-16 | 1998-09-15 | National Semiconductor Corporation | Self-convergent method for programming FLASH and EEPROM memory cells that moves the threshold voltage from an erased threshold voltage range to one of a plurality of programmed threshold voltage ranges |
JPH08263992A (ja) * | 1995-03-24 | 1996-10-11 | Sharp Corp | 不揮発性半導体記憶装置の書き込み方法 |
US5691939A (en) * | 1995-12-07 | 1997-11-25 | Programmable Microelectronics Corporation | Triple poly PMOS flash memory cell |
US5706227A (en) * | 1995-12-07 | 1998-01-06 | Programmable Microelectronics Corporation | Double poly split gate PMOS flash memory cell |
US5703808A (en) * | 1996-02-21 | 1997-12-30 | Motorola, Inc. | Non-volatile memory cell and method of programming |
US5903495A (en) | 1996-03-18 | 1999-05-11 | Kabushiki Kaisha Toshiba | Semiconductor device and memory system |
US5777923A (en) * | 1996-06-17 | 1998-07-07 | Aplus Integrated Circuits, Inc. | Flash memory read/write controller |
US6381670B1 (en) * | 1997-01-07 | 2002-04-30 | Aplus Flash Technology, Inc. | Flash memory array having maximum and minimum threshold voltage detection for eliminating over-erasure problem and enhancing write operation |
US5998826A (en) * | 1996-09-05 | 1999-12-07 | Macronix International Co., Ltd. | Triple well floating gate memory and operating method with isolated channel program, preprogram and erase processes |
US6201732B1 (en) * | 1997-01-02 | 2001-03-13 | John M. Caywood | Low voltage single CMOS electrically erasable read-only memory |
US5867425A (en) * | 1997-04-11 | 1999-02-02 | Wong; Ting-Wah | Nonvolatile memory capable of using substrate hot electron injection |
US5896315A (en) * | 1997-04-11 | 1999-04-20 | Programmable Silicon Solutions | Nonvolatile memory |
US6026017A (en) * | 1997-04-11 | 2000-02-15 | Programmable Silicon Solutions | Compact nonvolatile memory |
US6345000B1 (en) * | 1997-04-16 | 2002-02-05 | Sandisk Corporation | Flash memory permitting simultaneous read/write and erase operations in a single memory array |
JP3727449B2 (ja) | 1997-09-30 | 2005-12-14 | シャープ株式会社 | 半導体ナノ結晶の製造方法 |
TW354682U (en) * | 1998-01-12 | 1999-03-11 | Worldwide Semiconductor Mfg | Fast flash and erasable RAM |
JP3883687B2 (ja) * | 1998-02-16 | 2007-02-21 | 株式会社ルネサステクノロジ | 半導体装置、メモリカード及びデータ処理システム |
US6188604B1 (en) * | 1998-03-02 | 2001-02-13 | Amic Technology, Inc. | Flash memory cell & array with improved pre-program and erase characteristics |
ATE272395T1 (de) * | 1998-05-15 | 2004-08-15 | Chugai Pharmaceutical Co Ltd | Präparationen zur kontrollierten freisetzung |
US5978269A (en) * | 1998-08-17 | 1999-11-02 | National Semiconductor Corporation | Apparatus and method for lowering the potential barrier across the source-to-well junction during the programming of non-volatile memory cells |
US6281075B1 (en) | 1999-01-27 | 2001-08-28 | Sandisk Corporation | Method of controlling of floating gate oxide growth by use of an oxygen barrier |
US6091635A (en) * | 1999-03-24 | 2000-07-18 | Worldwide Semiconductor Manufacturing Corporation | Electron injection method for substrate-hot-electron program and erase VT tightening for ETOX cell |
US6133604A (en) * | 1999-04-20 | 2000-10-17 | Taiwan Semiconductor Manufacturing Corporation | NOR array architecture and operation methods for ETOX cells capable of full EEPROM functions |
JP3629383B2 (ja) * | 1999-06-10 | 2005-03-16 | シャープ株式会社 | 不揮発性半導体記憶装置の消去方式 |
US6060742A (en) * | 1999-06-16 | 2000-05-09 | Worldwide Semiconductor Manufacturing Corporation | ETOX cell having bipolar electron injection for substrate-hot-electron program |
TW480736B (en) * | 1999-06-24 | 2002-03-21 | Taiwan Semiconductor Mfg | Program and erase method of flash memory |
JP3863330B2 (ja) | 1999-09-28 | 2006-12-27 | 株式会社東芝 | 不揮発性半導体メモリ |
KR100407572B1 (ko) * | 2001-01-10 | 2003-12-01 | 삼성전자주식회사 | 낸드형 플래쉬 메모리 장치에서의 셀 드레쉬홀드 전압의분포를 개선하는 방법 |
JP3631463B2 (ja) | 2001-12-27 | 2005-03-23 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US6620682B1 (en) * | 2001-02-27 | 2003-09-16 | Aplus Flash Technology, Inc. | Set of three level concurrent word line bias conditions for a nor type flash memory array |
US6441428B1 (en) * | 2001-03-19 | 2002-08-27 | Micron Technology, Inc. | One-sided floating-gate memory cell |
US6522580B2 (en) | 2001-06-27 | 2003-02-18 | Sandisk Corporation | Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states |
US6456528B1 (en) | 2001-09-17 | 2002-09-24 | Sandisk Corporation | Selective operation of a multi-state non-volatile memory system in a binary mode |
JP4454896B2 (ja) * | 2001-09-27 | 2010-04-21 | シャープ株式会社 | 仮想接地型不揮発性半導体記憶装置 |
US6656792B2 (en) | 2001-10-19 | 2003-12-02 | Chartered Semiconductor Manufacturing Ltd | Nanocrystal flash memory device and manufacturing method therefor |
US6925007B2 (en) | 2001-10-31 | 2005-08-02 | Sandisk Corporation | Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements |
US6771536B2 (en) | 2002-02-27 | 2004-08-03 | Sandisk Corporation | Operating techniques for reducing program and read disturbs of a non-volatile memory |
US6570787B1 (en) * | 2002-04-19 | 2003-05-27 | Advanced Micro Devices, Inc. | Programming with floating source for low power, low leakage and high density flash memory devices |
EP1376698A1 (en) * | 2002-06-25 | 2004-01-02 | STMicroelectronics S.r.l. | Electrically erasable and programable non-volatile memory cell |
US6781877B2 (en) | 2002-09-06 | 2004-08-24 | Sandisk Corporation | Techniques for reducing effects of coupling between storage elements of adjacent rows of memory cells |
US6891753B2 (en) | 2002-09-24 | 2005-05-10 | Sandisk Corporation | Highly compact non-volatile memory and method therefor with internal serial buses |
US6888755B2 (en) * | 2002-10-28 | 2005-05-03 | Sandisk Corporation | Flash memory cell arrays having dual control gates per memory cell charge storage element |
US7259984B2 (en) | 2002-11-26 | 2007-08-21 | Cornell Research Foundation, Inc. | Multibit metal nanocrystal memories and fabrication |
US7005350B2 (en) * | 2002-12-31 | 2006-02-28 | Matrix Semiconductor, Inc. | Method for fabricating programmable memory array structures incorporating series-connected transistor strings |
US6980471B1 (en) * | 2004-12-23 | 2005-12-27 | Sandisk Corporation | Substrate electron injection techniques for programming non-volatile charge storage memory cells |
-
2004
- 2004-12-23 US US11/021,193 patent/US6980471B1/en active Active
-
2005
- 2005-08-04 US US11/198,261 patent/US7230847B2/en active Active
- 2005-08-05 EP EP05802297A patent/EP1829044B1/en not_active Not-in-force
- 2005-08-05 KR KR1020077013713A patent/KR101018667B1/ko active IP Right Grant
- 2005-08-05 CN CNB2005800440693A patent/CN100547687C/zh active Active
- 2005-08-05 AT AT05802297T patent/ATE415687T1/de not_active IP Right Cessation
- 2005-08-05 WO PCT/US2005/027963 patent/WO2006071282A1/en active Application Filing
- 2005-08-05 JP JP2007548188A patent/JP4195906B2/ja not_active Expired - Fee Related
- 2005-08-05 DE DE602005011333T patent/DE602005011333D1/de not_active Expired - Fee Related
- 2005-08-12 TW TW094127565A patent/TWI391935B/zh not_active IP Right Cessation
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2007
- 2007-05-18 US US11/750,469 patent/US7443736B2/en active Active
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010081310A1 (zh) * | 2008-12-30 | 2010-07-22 | 上海宏力半导体制造有限公司 | 共享字线的分栅式闪存 |
CN102298971A (zh) * | 2011-08-29 | 2011-12-28 | 南京大学 | 一种非挥发性快闪存储器高密度多值存储的操作方法 |
CN109584921A (zh) * | 2013-10-31 | 2019-04-05 | 爱思开海力士有限公司 | 半导体存储器件及其擦除方法 |
CN109584921B (zh) * | 2013-10-31 | 2023-08-22 | 爱思开海力士有限公司 | 半导体存储器件及其擦除方法 |
CN106537509A (zh) * | 2014-07-23 | 2017-03-22 | 纳姆实验有限责任公司 | 电荷存储铁电存储器混合体和擦除方案 |
CN106537509B (zh) * | 2014-07-23 | 2019-02-26 | 纳姆实验有限责任公司 | 擦除FeFET存储器电路的方法 |
CN110808078A (zh) * | 2014-12-17 | 2020-02-18 | 慧荣科技股份有限公司 | 将数据写入一闪存单元的方法以及控制装置 |
CN110808078B (zh) * | 2014-12-17 | 2021-09-24 | 慧荣科技股份有限公司 | 将数据写入一闪存单元的方法以及控制装置 |
CN109643714A (zh) * | 2016-08-31 | 2019-04-16 | 美光科技公司 | 混合式存储器装置 |
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US7443736B2 (en) | 2008-10-28 |
WO2006071282A1 (en) | 2006-07-06 |
ATE415687T1 (de) | 2008-12-15 |
EP1829044B1 (en) | 2008-11-26 |
TW200623137A (en) | 2006-07-01 |
EP1829044A1 (en) | 2007-09-05 |
JP2008525932A (ja) | 2008-07-17 |
KR101018667B1 (ko) | 2011-03-04 |
JP4195906B2 (ja) | 2008-12-17 |
US20060139998A1 (en) | 2006-06-29 |
TWI391935B (zh) | 2013-04-01 |
CN100547687C (zh) | 2009-10-07 |
DE602005011333D1 (de) | 2009-01-08 |
KR20070108143A (ko) | 2007-11-08 |
US6980471B1 (en) | 2005-12-27 |
US7230847B2 (en) | 2007-06-12 |
US20070217264A1 (en) | 2007-09-20 |
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