CN101021442A - Inserting electrode lead-out method for micro platinum thermal resistance temperature sensor - Google Patents
Inserting electrode lead-out method for micro platinum thermal resistance temperature sensor Download PDFInfo
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- CN101021442A CN101021442A CN 200710071883 CN200710071883A CN101021442A CN 101021442 A CN101021442 A CN 101021442A CN 200710071883 CN200710071883 CN 200710071883 CN 200710071883 A CN200710071883 A CN 200710071883A CN 101021442 A CN101021442 A CN 101021442A
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Abstract
A method leads out electrode of micro-platinum thermo-resistance temperature sensor. In order to meet requirement of ultrathin body, its steps are: (1) Wash Al2O3 base plate<1>. (2) Laser notch: use laser to process <1> and open two electrode grooves <2> at 1/3 of its one end. (3) Electrode<3> embedment: embed <3> into <2> and fill slack between them with high-temperature conductive agglomerant. Heat treat the agglomerant under 700-900deg.C for 1h to fix <3> in <2>. (4) Sputter platinum film <4>. (5) Plate-making and resistance adjusting. In this invention, sensitive film surface smooth without tubercle, wiped joint of electrode can not add sensor thickness, which can realize detecting temperature information of micro-parts including slit, slip and micro-space etc. The invention realizes microminiaturization and ultrathin of platinum thermo-resistance temperature sensor. It has merits of simple technology and strong operation.
Description
Technical field
The present invention relates to a kind of electrode lead-out method.
Background technology
The measurement range of platinum resistance sensor can be from-250～640 ℃, and performance is the most stable in metal fever resistance temperature sensor, and for platinum resistance sensor, substrate is thick more, and the thermal capacity of sensor is big more, and the response time is also just slow more.And, the privileged sites in fields such as modern industry, weaponry (as, between slit, fillet, microvoid etc.) need to detect small local temperature information, and require response to be exceedingly fast.Therefore, the micro ultrathin temperature sensor is badly in need of in engineering.
It is at Al that the electrode of traditional platinum resistance sensor is drawn
2O
3Realize electrode welding by the high-temperature agglomerant sintering on the surface of Pt film on the pottery, at the pad place solder joint close with substrate thickness (about 0.55mm) must be arranged, the thickness of whole sensor is reached more than the 1.1mm, response time, also more than 30s, this kind electrode lead-out method can't satisfy the requirement of ultra-thin body.
Summary of the invention
In order to satisfy the requirement of ultra-thin body, and a kind of inserting electrode lead-out method of micro platinum thermal resistance temperature sensor is proposed.
Step of the present invention is as follows:
Step 1: clean Al
2O
3Substrate 1;
Step 2: laser grooving: adopt laser instrument processing Al
2O
3Substrate 1 is at Al
2O
3About 1/3 place of one end of substrate 1 leaves two electrode trenches 2;
Step 3: electrode 3 is imbedded: in electrode 3 embedded electrode grooves 2, fill and lead up space between electrode 3 and the electrode trenches 2 with the high-temperature electric conduction cementing agent again, thermal treatment 1h sintering high temperature conductive adhesive is fixed on electrode 3 in the electrode trenches 2 under 700～900 ℃ of temperature;
Step 4: sputter platinum film 4;
Step 5: plate-making resistance trimming.
The present invention is applicable to the thick film Al that makes with traditional ceramics technology
2O
3Substrate and electrochemical oriented growth ultrathin membrane Al
2O
3The electrode of substrate is drawn processing, makes sensitive film surface smooth, no thrust, and electrode welding point does not increase the thickness of sensor in addition, realizes between slit, fillet, microvoid etc. detecting the purpose of small local temperature information.The present invention has realized miniature, ultra-thinization of platinum resistance sensor, has characteristics such as technology is simple, workable.
Description of drawings
Fig. 1 is a FB(flow block) of the present invention; Fig. 2 is a schematic flow sheet of the present invention; Fig. 3 is an embedded electrode micro platinum thermal resistance temperature sensor structural representation.
Embodiment
Embodiment one: in conjunction with Fig. 1 and Fig. 2 present embodiment is described, the step of present embodiment is as follows:
Step 1: clean Al
2O
3Substrate 1;
Step 2: laser grooving: adopt laser instrument processing Al
2O
3Substrate 1 is at Al
2O
3About 1/3 place of one end of substrate 1 leaves two electrode trenches 2;
Step 3: electrode 3 is imbedded: in electrode 3 embedded electrode grooves 2, fill and lead up space between electrode 3 and the electrode trenches 2 with the high-temperature electric conduction cementing agent again, thermal treatment 1h sintering high temperature conductive adhesive is fixed on electrode 3 in the electrode trenches 2 under 700～900 ℃ of temperature;
Step 4: sputter platinum film 4;
Step 5: plate-making resistance trimming.
Embodiment two: present embodiment and embodiment one difference are that the high-temperature electric conduction cementing agent is the intermixture in 1: 5～1: 10 ratio of frit and platinum slurry; Other composition is identical with embodiment one with connected mode.
Embodiment three: present embodiment is described in conjunction with Fig. 3, present embodiment and embodiment one difference are that the thickness of embedded electrode micro platinum thermal resistance temperature sensor integral body is at 0.15～0.65mm, reduce the thickness of sensor integral body, reached ultra-thin requirement; Other composition is identical with embodiment one with connected mode.
Embodiment four: in conjunction with Fig. 1 and Fig. 2 present embodiment is described, present embodiment and embodiment one difference are that step is as follows:
Step 1: clean Al
2O
3Substrate 1: at first boil 10～20min with deionized water, flush away Al
2O
3Solubility pollutant on the substrate 1; Secondly under the 30khz frequency, carry out Ultrasonic Cleaning 10～20min, flush away Al with acetone
2O
3Organic pollution on the substrate 1; Under the 30khz frequency, carry out Ultrasonic Cleaning 10～20min, flush away Al with alcohol then
2O
3Organic pollution on the substrate 1; Carry out Ultrasonic Cleaning 10～20min with deionized water under the 30khz frequency afterwards, flush away remains in Al
2O
3Acetone on the substrate 1 and alcohol; Dry at last or dry Al
2O
3Substrate 1;
Step 2: laser grooving: adopt the YAG laser instrument with 1062nm wavelength laser, 1～20khz pulse frequency processing Al
2O
3Substrate 1 is at Al
2O
3About 1/3 place of one end of substrate 1 leaves two electrode trenches 2, and machining accuracy is controlled in the 20 μ m; According to electrode 3 sizes and Al
2O
3Substrate 1 thickness is adjusted laser processing parameter by change and just can be processed the electrode trenches 2 that is fit to embedded electrode 3;
Step 3: electrode 3 is imbedded;
Step 4: sputter platinum film 4: remove vacuum chamber interior dirt, attachment and sediment with dipping in spirituous gauze wiping before the plated film;
1. bleed: with Al
2O
3Substrate 1 is put into the Sample Room of many targets of JGP560C type ultrahigh vacuum sputter coating machine, shut door for vacuum chamber, open mechanical pump, vacuum chamber is slightly taken out, when treating that vacuum reaches 10Pa, opened molecular pump, carefully take out, open simultaneously mechanical pump and the molecular pump of sputtering chamber, when treating vacuum less than 0.1Pa, the baffle plate in the middle of two chambers is shut;
2. backwash cleans Al
2O
3Substrate 1: with Al
2O
3Substrate 1 is as target, allows argon ion bombardment Al
2O
3Substrate 1 is to remove Al
2O
3The dust on substrate 1 surface and the gas of absorption etc., and make Al
2O
3There is very high activity on substrate 1 surface, is beneficial to platinum film 4 and Al
2O
3The combination of substrate 1; Treat that Sample Room vacuum reaches 3 * 10
-4During Pa, pass into argon gas, the flow of argon gas is about 20, and the bleeding regulating valve reaches about required pressure 3Pa Sample Room, under the power of 80w sample is carried out backwash with the method for rf magnetron sputtering and cleans at least 20min; Because Al
2O
3The cleannes on substrate 1 surface can be directly connected to the performance of the combination interface between film and substrate, also can affect the uniformity of plated film simultaneously.In order to improve the cleannes of substrate surface, backwash to clean Al
2O
3Substrate 1;
3. baking: the vacuum tightness at vacuum chamber reaches 5 * 10
-5During Pa, at high temperature toast vacuum chamber, the gas of absorption be extracted out as far as possible and gone.Baking temperature is selected 150 ℃, toasts two hours;
4. plated film: the baffle plate in the middle of two Room is opened the Al that backwash in the Sample Room is cleaned
2O
3Substrate 1 is sent to sputtering chamber by transmitting bar, closes overhead gage; The vacuum tightness for the treatment of sputtering chamber reaches 2 * 10
-5During Pa, feed argon gas, argon flow amount is about 22, same bleeding regulating valve reaches about required pressure 3Pa the operating room, adopt the method for magnetically controlled DC sputtering, keeping under the constant situation of vacuum tightness and argon pressure, carry out plated film by changing sputtering power and sputtering time, plated film adopts the platinum target, purity is 99.95%, the size Φ 60 * 2.5mm of target, target densification, surfacing is bright and clean, defectives such as inner nothing is loose, shrinkage cavity;
5. closing machine: after plated film finishes, turn off gas, shielding power supply, turn off molecular pump and mechanical pump;
6. inflate pickup: baffle plate is opened, in vacuum chamber, inflated, take out Al
2O
3Substrate 1;
The wall of vacuum chamber and other part in the vacuum chamber may contain adsorbed gas, aqueous vapor and carbon dioxide, and owing to the bombardment effect of electronics in the aura and ion, these gases may disengage again; Therefore, all surfaces that may contact aura all must suitably be cooled off in deposition process, in order to make it reach thermal balance in the first few minutes of deposit, so in the process that vacuumizes, cooling water is circulating in the vacuum chamber always;
Step 5: plate-making resistance trimming: adopt the YAG laser instrument with the laser resistor trimming instrument of 531nm wavelength laser, the 1～20khz pulse frequency Al at the good platinum film 4 of sputter
2O
3The resistance trimming of making a plate on the substrate 1, machining accuracy is controlled in the 20 μ m; Other composition is identical with the specific embodiment one with connected mode.
Claims (7)
1, the inserting electrode lead-out method of micro platinum thermal resistance temperature sensor is characterized in that the inserting electrode lead-out method step of micro platinum thermal resistance temperature sensor is as follows:
Step 1: clean Al
2O
3Substrate (1);
Step 2: laser grooving: adopt laser instrument processing Al
2O
3Substrate (1) is at Al
2O
3About 1/3 place of one end of substrate (1) leaves two electrode trenches (2);
Step 3: electrode (3) is imbedded: in electrode (3) embedded electrode groove (2), fill and lead up space between electrode (3) and the electrode trenches (2) with the high-temperature electric conduction cementing agent again, thermal treatment 1h sintering high temperature conductive adhesive under 700～900 ℃ of temperature is fixed on electrode (3) in the electrode trenches (2);
Step 4: sputter platinum film (4);
Step 5: plate-making resistance trimming.
2, the inserting electrode lead-out method of micro platinum thermal resistance temperature sensor according to claim 1 is characterized in that the high-temperature electric conduction cementing agent is the intermixture in 1: 5～1: 10 ratio of frit and platinum slurry.
3, the inserting electrode lead-out method of micro platinum thermal resistance temperature sensor according to claim 1, the thickness that it is characterized in that inserting electrode micro platinum thermal resistance temperature sensor integral body is at 0.15～0.65mm.
4, the inserting electrode lead-out method of micro platinum thermal resistance temperature sensor according to claim 1 is characterized in that at first boiling 10～20min with deionized water in the step 1 flush away Al
2O
3Solubility pollutant on the substrate (1); Secondly under the 30khz frequency, carry out Ultrasonic Cleaning 10～20min, flush away Al with acetone
2O
3Organic pollution on the substrate (1); Under the 30khz frequency, carry out Ultrasonic Cleaning 10～20min, flush away Al with alcohol then
2O
3Organic pollution on the substrate (1); Carry out Ultrasonic Cleaning 10～20min with deionized water under the 30khz frequency afterwards, flush away remains in Al
2O
3Acetone and alcohol on the substrate (1); Dry at last or dry Al
2O
3Substrate (1).
5, the inserting electrode lead-out method of micro platinum thermal resistance temperature sensor according to claim 1 is characterized in that adopting in the step 2 laser instrument with 1062nm wavelength laser, 1～20khz pulse frequency processing Al
2O
3Substrate (1) is at Al
2O
3About 1/3 place of one end of substrate (1) leaves two electrode trenches (2), and machining accuracy is controlled in the 20 μ m.
6, the inserting electrode lead-out method of micro platinum thermal resistance temperature sensor according to claim 1 is characterized in that step 4 is as follows:
Remove vacuum chamber interior dirt, attachment and sediment with dipping in spirituous gauze wiping before the plated film;
1. bleed: with Al
2O
3Substrate (1) is put into the Sample Room of many targets of ultrahigh vacuum sputter coating machine, shut door for vacuum chamber, open mechanical pump, vacuum chamber is slightly taken out, when treating that vacuum reaches 10Pa, opened molecular pump, carefully take out, open simultaneously mechanical pump and the molecular pump of sputtering chamber, when treating vacuum less than 0.1Pa, the baffle plate in the middle of two chambers is shut;
2. backwash cleans Al
2O
3Substrate (1): with Al
2O
3Substrate (1) is as target, allows argon ion bombardment Al
2O
3Substrate (1) is to remove Al
2O
3The dust on substrate (1) surface and the gas of absorption etc., and make Al
2O
3There is very high activity on substrate (1) surface, treats that Sample Room vacuum reaches 3 * 10
-4During Pa, pass into argon gas, the flow of argon gas is about 20, and the bleeding regulating valve reaches about required pressure 3Pa Sample Room, under the power of 80w sample is carried out backwash with the method for rf magnetron sputtering and cleans at least 20min;
3. baking: the vacuum tightness at vacuum chamber reaches 5 * 10
-5During Pa, at high temperature toast vacuum chamber, the gas of absorption be extracted out as far as possible and gone; Baking temperature is selected 150 ℃, toasts two hours;
4. plated film: the baffle plate in the middle of two Room is opened the Al that backwash in the Sample Room is cleaned
2O
3Substrate (1) is sent to sputtering chamber by transmitting bar, closes overhead gage; The vacuum tightness for the treatment of sputtering chamber reaches 2 * 10
-5During Pa, feed argon gas, argon flow amount is about 22, same bleeding regulating valve reaches about required pressure 3Pa the operating room, adopts the method for magnetically controlled DC sputtering, is keeping under the constant situation of vacuum tightness and argon pressure, carry out plated film by changing sputtering power and sputtering time, plated film adopts the platinum target, and purity is 99.95%, the size Φ 60 * 2.5mm of target;
5. closing machine: after plated film finishes, turn off gas, shielding power supply, turn off molecular pump and mechanical pump;
6. inflate pickup: baffle plate is opened, in vacuum chamber, inflated, take out Al
2O
3Substrate (1);
In the process that vacuumizes, cooling water is circulating in the vacuum chamber always.
7, the inserting electrode lead-out method of micro platinum thermal resistance temperature sensor according to claim 1 is characterized in that in the step 5 adopting laser instrument with the laser resistor trimming instrument of 531nm wavelength laser, the 1～20khz pulse frequency Al at the good platinum film of sputter (4)
2O
3The resistance trimming of making a plate on the substrate (1), machining accuracy is controlled in the 20 μ m.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100718835A CN100504326C (en) | 2007-03-14 | 2007-03-14 | Inserting electrode lead-out method for micro platinum thermal resistance temperature sensor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100718835A CN100504326C (en) | 2007-03-14 | 2007-03-14 | Inserting electrode lead-out method for micro platinum thermal resistance temperature sensor |
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| Publication Number | Publication Date |
|---|---|
| CN101021442A true CN101021442A (en) | 2007-08-22 |
| CN100504326C CN100504326C (en) | 2009-06-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2007100718835A Expired - Fee Related CN100504326C (en) | 2007-03-14 | 2007-03-14 | Inserting electrode lead-out method for micro platinum thermal resistance temperature sensor |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102607732A (en) * | 2012-03-20 | 2012-07-25 | 哈尔滨工程大学 | Preparation method of film temperature sensor for liquid floated gyroscope |
| CN103876737A (en) * | 2014-04-08 | 2014-06-25 | 青岛柏恩鸿泰电子科技有限公司 | Dry soft electrode based on direct-current magnetron sputtering technology and manufacturing process thereof |
| CN104374886A (en) * | 2014-12-17 | 2015-02-25 | 哈尔滨理工大学 | B-cemented semiconductor-heating temperature and humidity self-compensation integrated gas sensor |
| CN106370318A (en) * | 2016-11-23 | 2017-02-01 | 合肥舒实工贸有限公司 | Thermistor temperature sensor |
| CN106556473A (en) * | 2016-11-23 | 2017-04-05 | 合肥舒实工贸有限公司 | Thermistor temperature sensor |
| CN106556474A (en) * | 2016-11-23 | 2017-04-05 | 合肥舒实工贸有限公司 | Thermistor temperature sensor |
| CN106644144A (en) * | 2016-11-23 | 2017-05-10 | 合肥舒实工贸有限公司 | Thermistor-included temperature sensor |
| CN107681178A (en) * | 2017-08-24 | 2018-02-09 | 上海交通大学 | The detecting system of detection fuel cell pile internal temperature field change and preparation in real time |
| CN111742203A (en) * | 2018-03-15 | 2020-10-02 | 贺利氏先进传感器技术有限公司 | Temperature sensor element |
| CN112362178A (en) * | 2019-06-26 | 2021-02-12 | 兴勤（宜昌）电子有限公司 | Double-sided automatic welding equipment for glass packaging temperature sensor |
| CN114459624A (en) * | 2022-01-24 | 2022-05-10 | 清华大学 | Embedded film thermocouple and preparation method thereof |
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- 2007-03-14 CN CNB2007100718835A patent/CN100504326C/en not_active Expired - Fee Related
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102607732A (en) * | 2012-03-20 | 2012-07-25 | 哈尔滨工程大学 | Preparation method of film temperature sensor for liquid floated gyroscope |
| CN102607732B (en) * | 2012-03-20 | 2013-08-28 | 哈尔滨工程大学 | Preparation method of film temperature sensor for liquid floated gyroscope |
| CN103876737A (en) * | 2014-04-08 | 2014-06-25 | 青岛柏恩鸿泰电子科技有限公司 | Dry soft electrode based on direct-current magnetron sputtering technology and manufacturing process thereof |
| CN103876737B (en) * | 2014-04-08 | 2016-03-02 | 青岛柏恩鸿泰电子科技有限公司 | Based on dry type soft electrode and the preparation technology thereof of magnetically controlled DC sputtering technology |
| CN104374886A (en) * | 2014-12-17 | 2015-02-25 | 哈尔滨理工大学 | B-cemented semiconductor-heating temperature and humidity self-compensation integrated gas sensor |
| CN106556473A (en) * | 2016-11-23 | 2017-04-05 | 合肥舒实工贸有限公司 | Thermistor temperature sensor |
| CN106370318A (en) * | 2016-11-23 | 2017-02-01 | 合肥舒实工贸有限公司 | Thermistor temperature sensor |
| CN106556474A (en) * | 2016-11-23 | 2017-04-05 | 合肥舒实工贸有限公司 | Thermistor temperature sensor |
| CN106644144A (en) * | 2016-11-23 | 2017-05-10 | 合肥舒实工贸有限公司 | Thermistor-included temperature sensor |
| CN107681178A (en) * | 2017-08-24 | 2018-02-09 | 上海交通大学 | The detecting system of detection fuel cell pile internal temperature field change and preparation in real time |
| CN111742203A (en) * | 2018-03-15 | 2020-10-02 | 贺利氏先进传感器技术有限公司 | Temperature sensor element |
| CN111742203B (en) * | 2018-03-15 | 2023-03-10 | 贺利氏先进传感器技术有限公司 | Temperature sensor element |
| CN112362178A (en) * | 2019-06-26 | 2021-02-12 | 兴勤（宜昌）电子有限公司 | Double-sided automatic welding equipment for glass packaging temperature sensor |
| CN114459624A (en) * | 2022-01-24 | 2022-05-10 | 清华大学 | Embedded film thermocouple and preparation method thereof |
| CN114459624B (en) * | 2022-01-24 | 2023-05-16 | 清华大学 | Built-in film thermocouple and preparation method thereof |
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| CN100504326C (en) | 2009-06-24 |
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Assignee: Harbin Railway Bureau Industry Corporation, Qigihar power equipment factory Assignor: Harbin University of Science and Technology Contract fulfillment period: 2009.6.25 to 2015.6.25 contract change Contract record no.: 2009230000038 Denomination of invention: Inserting electrode lead-out method for micro platinum thermal resistance temperature sensor Granted publication date: 20090624 License type: Exclusive license Record date: 20091026 |
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Free format text: EXCLUSIVE LICENSE; TIME LIMIT OF IMPLEMENTING CONTACT: 2009.6.25 TO 2015.6.25; CHANGE OF CONTRACT Name of requester: HARBIN RAILWAY BUREAU INDUSTRY CORPORATION QIQIHAR Effective date: 20091026 |
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