CN100499138C - 一种tft lcd阵列基板结构及其制造方法 - Google Patents
一种tft lcd阵列基板结构及其制造方法 Download PDFInfo
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- CN100499138C CN100499138C CNB2006101498842A CN200610149884A CN100499138C CN 100499138 C CN100499138 C CN 100499138C CN B2006101498842 A CNB2006101498842 A CN B2006101498842A CN 200610149884 A CN200610149884 A CN 200610149884A CN 100499138 C CN100499138 C CN 100499138C
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
Abstract
Description
Claims (17)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2006101498842A CN100499138C (zh) | 2006-10-27 | 2006-10-27 | 一种tft lcd阵列基板结构及其制造方法 |
US11/926,303 US7714949B2 (en) | 2006-10-27 | 2007-10-29 | TFT LCD array substrate and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2006101498842A CN100499138C (zh) | 2006-10-27 | 2006-10-27 | 一种tft lcd阵列基板结构及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1945840A CN1945840A (zh) | 2007-04-11 |
CN100499138C true CN100499138C (zh) | 2009-06-10 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CNB2006101498842A Active CN100499138C (zh) | 2006-10-27 | 2006-10-27 | 一种tft lcd阵列基板结构及其制造方法 |
Country Status (2)
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US (1) | US7714949B2 (zh) |
CN (1) | CN100499138C (zh) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7952099B2 (en) | 2006-04-21 | 2011-05-31 | Beijing Boe Optoelectronics Technology Co., Ltd. | Thin film transistor liquid crystal display array substrate |
CN100483232C (zh) | 2006-05-23 | 2009-04-29 | 北京京东方光电科技有限公司 | 一种tft lcd阵列基板结构及其制造方法 |
KR100846974B1 (ko) | 2006-06-23 | 2008-07-17 | 베이징 보에 옵토일렉트로닉스 테크놀로지 컴퍼니 리미티드 | Tft lcd 어레이 기판 및 그 제조 방법 |
JP4740203B2 (ja) | 2006-08-04 | 2011-08-03 | 北京京東方光電科技有限公司 | 薄膜トランジスタlcd画素ユニットおよびその製造方法 |
KR100867866B1 (ko) | 2006-09-11 | 2008-11-07 | 베이징 보에 옵토일렉트로닉스 테크놀로지 컴퍼니 리미티드 | Tft-lcd 어레이 기판 및 그 제조 방법 |
CN100461432C (zh) | 2006-11-03 | 2009-02-11 | 北京京东方光电科技有限公司 | 一种薄膜晶体管沟道结构 |
CN100423082C (zh) | 2006-11-03 | 2008-10-01 | 北京京东方光电科技有限公司 | 一种平板显示器***内接口单元 |
KR100917654B1 (ko) | 2006-11-10 | 2009-09-17 | 베이징 보에 옵토일렉트로닉스 테크놀로지 컴퍼니 리미티드 | 박막트랜지스터 액정 디스플레이 화소 구조 및 그 제조방법 |
CN100442132C (zh) | 2006-11-17 | 2008-12-10 | 北京京东方光电科技有限公司 | 一种tft lcd阵列基板结构及其制造方法 |
US9052550B2 (en) | 2006-11-29 | 2015-06-09 | Beijing Boe Optoelectronics Technology Co., Ltd | Thin film transistor liquid crystal display |
CN100432770C (zh) * | 2006-11-29 | 2008-11-12 | 北京京东方光电科技有限公司 | 一种液晶显示器装置 |
CN100462795C (zh) | 2006-11-29 | 2009-02-18 | 北京京东方光电科技有限公司 | 取向液和隔垫物的制备方法 |
CN100524781C (zh) | 2006-12-13 | 2009-08-05 | 北京京东方光电科技有限公司 | 一种薄膜晶体管液晶显示器像素结构及其制造方法 |
CN1996133A (zh) | 2006-12-13 | 2007-07-11 | 京东方科技集团股份有限公司 | 一种薄膜晶体管液晶显示器及其制造方法 |
CN100461433C (zh) | 2007-01-04 | 2009-02-11 | 北京京东方光电科技有限公司 | 一种tft阵列结构及其制造方法 |
CN101424794B (zh) * | 2007-11-02 | 2010-12-22 | 上海中航光电子有限公司 | 液晶显示装置及其修复方法 |
CN101561604B (zh) | 2008-04-17 | 2011-07-06 | 北京京东方光电科技有限公司 | 薄膜晶体管液晶显示器阵列基板结构及制造方法 |
KR101273913B1 (ko) * | 2008-09-19 | 2013-06-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
CN101750813B (zh) * | 2008-12-12 | 2011-08-24 | 北京京东方光电科技有限公司 | 液晶显示器及其控制方法 |
CN101819363B (zh) * | 2009-02-27 | 2011-12-28 | 北京京东方光电科技有限公司 | Tft-lcd阵列基板及其制造方法 |
CN102156359B (zh) * | 2010-06-13 | 2014-05-07 | 京东方科技集团股份有限公司 | 阵列基板、液晶面板和液晶显示器及驱动方法 |
TWI470808B (zh) | 2011-12-28 | 2015-01-21 | Au Optronics Corp | 半導體元件及其製作方法 |
CN102629059B (zh) * | 2012-01-31 | 2015-05-27 | 京东方科技集团股份有限公司 | 阵列基板及制造方法、液晶面板和液晶显示器 |
KR101859483B1 (ko) * | 2012-03-06 | 2018-06-27 | 엘지디스플레이 주식회사 | 입체 영상 표시 장치 및 그 제조 방법 |
US20130335662A1 (en) * | 2012-06-18 | 2013-12-19 | Tsunglung Chang | Hotspot Repair Method for LCD Panel and LCD Panel after Hotspot Repair |
CN103367165A (zh) * | 2013-07-01 | 2013-10-23 | 北京京东方光电科技有限公司 | 薄膜晶体管及其制作方法、阵列基板及显示器 |
CN103529604A (zh) * | 2013-10-28 | 2014-01-22 | 合肥京东方光电科技有限公司 | 像素结构及其制造方法、阵列基板和液晶显示面板 |
CN104570530A (zh) * | 2015-02-02 | 2015-04-29 | 京东方科技集团股份有限公司 | 一种双栅线阵列基板和显示装置 |
CN104880852B (zh) | 2015-06-16 | 2019-02-15 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法、显示面板和显示装置 |
CN105161504B (zh) * | 2015-09-22 | 2019-01-04 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示装置 |
KR102485374B1 (ko) * | 2015-12-31 | 2023-01-04 | 엘지디스플레이 주식회사 | 디스플레이 장치 |
CN105974659B (zh) * | 2016-07-29 | 2020-07-07 | 上海中航光电子有限公司 | 阵列基板及显示面板 |
KR102596126B1 (ko) * | 2016-10-19 | 2023-10-31 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조방법 |
CN107402486B (zh) * | 2017-08-31 | 2020-06-30 | 京东方科技集团股份有限公司 | 阵列基板及其驱动方法、显示装置 |
CN107643605B (zh) * | 2017-10-20 | 2020-09-29 | 张家港康得新光电材料有限公司 | 基板组件、2d/3d可切换显示面板及显示装置 |
CN109031814B (zh) * | 2018-09-06 | 2021-06-18 | Tcl华星光电技术有限公司 | 液晶显示器及其阵列基板 |
CN112349205B (zh) * | 2020-10-26 | 2022-09-27 | 京东方科技集团股份有限公司 | 一种阵列基板及其维修方法和显示面板 |
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KR100920923B1 (ko) * | 2002-12-31 | 2009-10-12 | 엘지디스플레이 주식회사 | 횡전계방식 액정표시장치용 어레이기판과 그 제조방법 |
CN1567074A (zh) | 2003-06-20 | 2005-01-19 | 友达光电股份有限公司 | 具有遮光结构的平面显示器及其制造方法 |
CN100442132C (zh) * | 2006-11-17 | 2008-12-10 | 北京京东方光电科技有限公司 | 一种tft lcd阵列基板结构及其制造方法 |
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2006
- 2006-10-27 CN CNB2006101498842A patent/CN100499138C/zh active Active
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2007
- 2007-10-29 US US11/926,303 patent/US7714949B2/en active Active
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Publication number | Publication date |
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CN1945840A (zh) | 2007-04-11 |
US7714949B2 (en) | 2010-05-11 |
US20080100766A1 (en) | 2008-05-01 |
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Effective date of registration: 20071019 Address after: 100176 No. 8 West Central Road, Beijing economic and Technological Development Zone Applicant after: Beijing BOE Photoelectricity Science & Technology Co., Ltd. Co-applicant after: BOE Technology Group Co., Ltd. Address before: 100016 No. 10, Jiuxianqiao Road, Beijing, Chaoyang District Applicant before: BOE Technology Group Co., Ltd. |
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