CN100492246C - Method and structure of forming reference voltage - Google Patents
Method and structure of forming reference voltage Download PDFInfo
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- CN100492246C CN100492246C CNB038141604A CN03814160A CN100492246C CN 100492246 C CN100492246 C CN 100492246C CN B038141604 A CNB038141604 A CN B038141604A CN 03814160 A CN03814160 A CN 03814160A CN 100492246 C CN100492246 C CN 100492246C
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
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Abstract
A selected bandgap reference of a voltage generator is operated at a duty cycle that is less than one hundred per cent. The seclectable bandgap reference has at a high current consumption when enabled and a low current consumption when disabled. The output voltage of the selectable bandgap reference is stored on a storage element when the selectable bandgap reference is enabled. A high impedance amplifier receives the stored voltage and generates the reference voltage.
Description
Technical field
The present invention relates generally to electronic equipment, more specifically, relate to the method that forms semiconductor devices and structure.
Background technology
In the past, semicon industry utilizes the whole bag of tricks and structure to form bandgap regulator.Usually, these bandgap regulator are utilized the basis of the bipolar transistor of two different sizes as bandgap regulator.Usually, resistance is connected in series between the emitter and power supply than the megacryst pipe.The voltage that is added on the resistance and is amplified by resistance ratio is as the part of stable bandgap voltage reference.In some applications, wish to have lower power consumption, therefore, bandgap regulator is operated in low current condition, and for example, electric current is less than two (2) microamperes.Under low current condition, the offset voltage that produces at amp.in is used as the ohmically voltage of amplification.These offset voltages cause coarse reference voltage.Usually, these skews cause positive and negative at least (4%) 4 percent error.
In these low current condition, the leakage current of device occupies bigger number percent with respect to the electric current that flows through bipolar transistor, and has increased the inexactness of reference voltage.These leakage currents cause the extra inexactness of one of about percentage or two (1%-2%) usually.
In addition, the low current operation has also reduced the Power Supply Rejection Ratio (PSRR) of these bandgap regulator.Under low current condition, the limit of the PSRR of bandgap regulator moves to lower frequency, causes the bigger output voltage of noise.
Another problem is to form the required area of these existing bandgap regulator.For minimizing power dissipation, have to increase the size of resistance, thereby increase the cost of bandgap regulator.
Therefore, be desirable to provide a kind of under low current, work in case realize low-power consumption, precision greater than plus or minus (4%) 4 percent, minimize leakage current influence, have the Power Supply Rejection Ratio of improvement and do not adopt the bandgap regulator of the bigger resistance value that consumes a large amount of areas.
Summary of the invention
According to an aspect of the present invention, a kind of method that forms pedestal generator is provided, comprise: band-gap circuit is formed to be enabled during the cycle very first time have the reference voltage of a value with generation, and the response cycle very first time and memory device is connected to band-gap circuit and the value of reference voltage is stored on the memory device; Band-gap circuit formed during second time cycle be under an embargo; And pedestal generator formed second time cycle of response and disconnect so that do not receive reference voltage with memory device, comprise described value being remained on the memory device in forming pedestal generator during second time cycle.
According to another aspect of the invention, provide a kind of method that produces reference voltage, comprising: first interim of work period of band-gap reference circuit make bandgap reference circuit with receive working current and with it response produce reference voltage with first value; Response first is connected to memory element with band-gap reference circuit and storage first value on memory element at interval; With forbid band-gap reference circuit in second interim of work period in case do not receive working current and with it response suppress to produce reference voltage, comprise that response second disconnects memory element and band-gap reference circuit and maintenance first value on memory element at interval.Wherein, first of the work period at interval less than a hundred per cent.
According to another aspect of the invention, provide a kind of reference voltage device, comprising: but output, first input and the second selection reference amplifier of importing had; First reference transistor with first electric current current-carrying electrode, but the first electric current current-carrying electrode of this first reference transistor is connected to by first and second resistance that are connected in series from selection reference amplifier received current, but wherein first input that is connected to become the selection reference amplifier of second resistance that is connected in series provides voltage; Second reference transistor with first electric current current-carrying electrode, but the first electric current current-carrying electrode of this second reference transistor is connected to by the 3rd resistance that is connected in series from selection reference amplifier received current, but wherein second input that is connected to become the selection reference amplifier of the 3rd resistance that is connected in series provides voltage; But and be connected to and provide timing signal optionally to enable and to forbid the timing circuit of selection reference amplifier.
Description of drawings
Fig. 1 schematically shows the embodiment according to the part of bandgap reference generator of the present invention;
Fig. 2 schematically shows the part according to the alternate embodiment of the part of the bandgap reference generator of Fig. 1 of the present invention;
Fig. 3 schematically shows the part according to another alternate embodiment of the part of the bandgap reference generator of Fig. 1 of the present invention;
Fig. 4 schematically shows the embodiment according to the part of the bandgap reference generator of Fig. 1 of the present invention; And
Fig. 5 schematically shows the planimetric map of the amplification of semiconductor device according to the invention.
For simple and clearly explanation, element in the drawings need not be in proportion, and identical reference number is represented components identical in different figure.In addition, omitted the introduction and the details of known steps and element, with simplified illustration.As used here, the meaning of electric current current-carrying electrode is to transmit the element of the device of the electric current that passes through device, for example, the emitter of the source electrode of MOS transistor or drain electrode or bipolar transistor or collector, the meaning of control electrode is to control the element of the device of the electric current that flows through device, for example, the base stage of the grid of MOS transistor or bipolar transistor.
Embodiment
Fig. 1 schematically shows low-power consumption and produces the part of embodiment of the pedestal generator 10 of accurate reference voltage in benchmark output 15.Generator 10 comprises by the selectable band-gap reference 11 of generator 10 to operate less than the dutycycle of a hundred per cent (100%).The dutycycle that generator 10 is determined with the timing circuit 12 of generator 10 optionally enables and disables reference 11.Form benchmark 11, when benchmark 11 is enabled, produce band gap output voltage in output 21.Benchmark 11 also comprise enable to import 19, reference cell 33, selectable benchmark amplifier 36, reference comparator 37, disable transistor 39, phase inverter 38 and effectively output 22 of voltage.When enabling benchmark 11, formed benchmark 11 is worked under current state and high power consumption state, and when forbidding or do not enable benchmark 11, benchmark 11 is a low-power consumption.Benchmark 11 is worked under current state and have been eliminated the influence of low current biasing and help to provide accurate reference voltage in output 15 when enabling, and operation benchmark 11 has reduced the power consumption of generator 10 under low duty ratio.Usually, when benchmark 11 enabled, benchmark 11 had at least 30 microamperes current drain.Amplifier 36 enables to import on 35 from importing 19 reception timing signal or enable signals amplifier 36.When enabling to import 35 when low, forbid amplifier 36, and, enable amplifier 36 when importing 35 when being high.As known in the field, amplifier has and is the transistorized current source of amplifier internal bias.Forbid or enable selectable amplifier 36 by the current source of forbidding respectively or enable amplifier 36 inside.Forbid that current source prevents amplifier 36 operation and provides electric current except that leakage current for any load of the output that is connected to amplifier 36.
In a preferred embodiment, formed reference cell 33 comprises first reference transistor 32 and second reference transistor 34.Transistor 32 is connected to output 21 by the resistance 27 and 28 that is connected in series.Tie point in resistance 27 and 28 forms node 29.Transistor 34 is connected to output 21 by the resistance 31 that is connected in series.Between resistance 31 and transistor 34, be connected to form node 30.As known in the field, formed transistor 32 and 34 is of different sizes, and transistor 32 is greater than transistor 34, as represented with transistor symbol.It will be understood by those of skill in the art that unit 33 is the reduced representation of bandgap cell, and unit 33 comprises other known elements of band-gap reference.
When the enable signal of input on 19 uprises, amplifier 36 allow for transistor 32 and 34 and corresponding resistance 27,28 and 31 electric current is provided.High enable signal in input 19 is disable transistor 39 also, is beneficial to electric current and flows out from the output of amplifier 36.When the electric current from amplifier 36 flows through transistor 32 and 24, and flow through resistance 27,28 and at 31 o'clock, on resistance 28, form the voltage of the base-emitter voltage difference that is substantially equal to transistor 32 and 34.The so-called Δ Vbe of this voltage voltage.Benchmark amplifier 36 compensates the voltage of nodes 29 and 30, allows amplifier 36 to amplify Δ Vbe voltages, so that form band gap output voltage in output 21.The voltage that forms on node 30 is the builtin voltage that is called Vbe voltage.Reference comparator 37 is value and the Vbe voltage on node 30 or the value of builtin voltage of band gap output voltage relatively, so that form control signal or voltage useful signals in output 22.The voltage useful signal is represented poor between output voltage and the builtin voltage.The anti-phase input of formed comparer 37 has offset voltage, can proper operation when forbidding amplifier 36 with box lunch.Therefore, the value of output voltage must add the value of offset voltage greater than builtin voltage, so that make the voltage useful signal for high.When being high at the enable signal of input on 19, the value of the band gap output voltage in output 21 adds the value of the internal blas voltage of comparer 37 greater than the builtin voltage on node 30, and therefore, comparer 37 driving voltage useful signals be height.The high voltage useful signal allows transistor 14 that the value of band gap output voltage is coupled to element 13, is used for storing.
When the enable signal step-down, disables reference 11 and amplifier 36 have only leakage current to flow through resistance 27,28 and 31 from amplifier 36, and flow through transistor 32 and 34.Low enable signal in input 19 also by phase inverter 38 enables transistors 39, is moved the output of amplifier 36 to the level of return path 18 or lower value.The non-inverting input of comparer 37 is from the output incoming level of amplifier 36.Because the leakage current from amplifier 36 has very little voltage on node 30.This small voltage is applied to the anti-phase input of comparer 37.Because the offset voltage on the inverting input of comparer 37, this small voltage on node 30 can trigger comparator 37.The value of selecting offset voltage is to guarantee that leakage current can not trigger comparator 37.In a preferred embodiment, offset voltage is approximately 100mV.Therefore, comparer 37 driving voltage useful signals are low, and the output voltage that is illustrated in the output 21 is invalid, and should not use.Low level voltage useful signal disable transistor 14, and element 13 and output 21 disconnections, thus maintenance is stored in the magnitude of voltage in the element 13.When should be noted that the input voltage that receives when comparer 37 near the value of return path 18, comparer 37 work of having to is as what seen in the top explanation.Design with this voltage power supply is known for those skilled in the art.
In order to be beneficial to this operation, the output of amplifier 36 is connected to first end of resistance 27 and first end of resistance 31.Second end of resistance 27 is connected to first end of node 29 and resistance 28.The emitter of transistor 32 is connected to second end of resistance 28.The collector of transistor 32 and base stage are connected to voltage return path 18.Second end of resistance 31 is connected to the emitter of node 30 and transistor 34.The base stage of transistor 34 and collector are connected to return path 18.The non-inverting input of amplifier 36 is connected to node 30, and inverting input is connected to node 29, and output simultaneously is connected to the non-inverting input of output 21 and comparer 37.The enabling of amplifier 36 imported 35 and is connected to input 19.The anti-phase input of comparer 37 is connected to node 30, and the output of comparer 37 simultaneously is connected to output 22.The source electrode of transistor 39 is connected to return path 18, and drain electrode is connected to the non-inverting input of comparer 37, and grid is connected to the output of phase inverter 38.The input of phase inverter 38 is connected to input 19.The drain electrode of transistor 14 is connected to output 21, and source electrode is connected to the non-inverting input of amplifier 16 and first end of element 13.The grid of transistor 14 is connected to output 22 and timing circuit 12.Second end of element 13 is connected to return path 18.The non-inverting input of amplifier 16 is connected to the output of amplifier 16 and is connected to 15.The output of timing circuit 12 is connected to input 19.It will be understood by those of skill in the art that amplifier 36, comparer 37 and phase inverter 38 from import 17 and return path 18 receive working powers.
The particular bandgap cell of using in benchmark 11 can be any one in many different well know bandgap designs.Two this designs have been shown in Fig. 2 and Fig. 3.
Fig. 2 schematically shows the part of band-gap reference 80 of the alternate embodiment of the benchmark 11 that illustrates in the introduction of Fig. 1.Benchmark 80 is included in the bandgap cell 81 of the alternate embodiment of the unit 33 that illustrates in the introduction of Fig. 1.When forbidding amplifier 36, the output of amplifier 36 is connected to input 17 with disable transistor 82.Unit 81 and operation thereof are known for those skilled in the art.In certain embodiments, unit 81 is as the unit 33 in the generator 10 of Fig. 1.
Fig. 3 schematically shows the part of band-gap reference 85 of the alternate embodiment that is the benchmark 11 that illustrates in the introduction of Fig. 1.Benchmark 85 is included in the bandgap cell 86 of the alternate embodiment of the unit 33 that illustrates in the introduction of Fig. 1.When forbidding amplifier 36, the output of amplifier 36 is connected to input 17 with disable transistor 87.Unit 86 and operation thereof are known for those skilled in the art.In certain embodiments, unit 86 is as the unit 33 in the generator 10 of Fig. 1.
Fig. 4 schematically shows the part of timing circuit 70 of the preferred embodiment of the timing circuit 12 that illustrates in the introduction of Fig. 1.Circuit 12 comprises simulation relaxor 41 and is used for forming the analog pulse reshaper 42 of the low duty cycle enable signal that is added to input 19.Form circuit 70 so that low-power consumption and low-power consumption to be provided, so that minimize the power that generator 10 (referring to Fig. 1) consumes.The enable signal of low duty ratio it will be understood by those of skill in the art that and to adopt Digital Implementation or other implementation, as long as can be provided for generator 10.But, as well-known, because the various frequencies relevant with the power consumption composition of Digital Implementation, so the simulation of circuit 70 realizes providing more controlled power consumption than Digital Implementation.The threshold voltage that the reference circuit 68 of circuit 70 provides oscillator 41 and reshaper 42 to use.Circuit 68 provides first threshold voltage or low threshold voltage in output 71, provide second threshold voltage or high threshold voltage in output 72.
Suppose rest-set flip-flop 47 set, and transistor 53 is forbidden.Current source 48 is with complete controlled speed charging capacitor 51.When the voltage on the electric capacity 51 reached high threshold, the output of comparer 52 uprised, and drive node 50 uprises.High level on node 50 allows transistor 61 charging capacitors 59.Notice that node 64 is low, phase inverter 66 is output as height, therefore, is added to trigger 47 from the high level of node 50.High level on the node 50 is also by door 44 and 46 reset flip-flops 47, and Q (Q bar) output that drives trigger 47 uprises, and allows transistor 53 discharge capacities 51.When electric capacity 51 discharges into high threshold, node 50 step-downs, disable transistor 61 stops charging capacitor 59.From node 50 through moving into one's husband's household upon marriage 44 and 46, the time quantum that allows transistor 61 charging capacitors 59 being set through trigger 47 with through the delay of comparer 52.This delay is usually compared very little with the cycle of oscillator 41, therefore, be added on the electric capacity 59 at the very small amount of electric charge of each impulse duration of oscillator 41.Oscillator 41 continues vibration, is charged to the magnitude of voltage that equals to export the high threshold on 72 at least up to electric capacity 59.This magnitude of voltage is received by comparer 63, and the output and the node 64 that drive comparer 63 uprise.Notice that be added to other electric charge in the process of electric capacity 59 owing to oscillator 41 is in this moment, so node 50 also is high.High level on the node 64 and 50 allows AND door 69 to produce enable signal to input 19.Simultaneously, the high level on node 64 makes the output step-down and the inhibit gate 44 of phase inverter 66, thereby prevents the high level reset flip-flop 47 on the node 50.Circuit 70 remains on this state, up to receiving the voltage useful signal from benchmark 11.Voltage useful signal reset flip-flop 65 in output 22 makes Q output step-down, allows transistor 62 discharge capacities 59.When the voltage on the electric capacity 59 discharges into when being lower than high threshold, the output step-down of comparer 63 removes enable signal from importing 19, also removes low level from door 44, allows the high level reset flip-flop 47 on the node 50.When the voltage on electric capacity 59 reached low threshold value, the output of comparer 74 uprised, set flip-flop 65 and disable transistor 62, thus allow the operation of reshaper 42 response oscillators 41 to restart charging capacitor 59.The oscillator 41 that forms postpones up to receiving that the voltage useful signal guarantees that the output of benchmark 11 reaches effective working value.Postponing a time cycle after receiving the voltage useful signal is provided at and is the time of charge member 13 before removing enable signal.
In an example, form generator 10 provides about 1.2V in output 15 reference voltage, and with 2.2% dutycycle work.Enabling pulse has the pulse width of about 40 μ s and the cycle of about 2ms.When enabling benchmark 11, the electric current of process resistance 28 is approximately 5 μ A, the generator 10 corresponding electric currents that consume about 30 μ A.When disables reference 11, generator 10 approximately consumes the electric current of 10nA.Generator 10 population mean consumed current are about 0.6 μ A.Therefore, benchmark 11 uses big electric current to flow through transistor 32 and 34, so that form reliable reference voltage, and consumes small amount of current when forbidding, so that reduce overall power consumption.In addition, under these current status, the pole frequency of generator 10 has improved the PSRR of generator 10 greater than 1KHz.
Fig. 5 schematically shows the amplification view of the part of the embodiment of the semiconductor devices 75 of formation on semiconductor element 76.Generator 10 is formed on the tube core 76 with the load 77 of the reference voltage that utilizes generator 10 to produce.
A kind of Apparatus and method for of novelty is obviously disclosed in sum.In further feature, comprise the formation voltage reference, to operate the band-gap reference unit less than hundred-percent dutycycle.Form voltage reference, when allowing, under current state, operate, minimize the low current influence of reference voltage.The influence of big current consumption minimizes leakage current has also improved Power Supply Rejection Ratio.Therefore, low duty cycle operation has reduced the power consumption of reference generator and has improved the precision of reference voltage.
Though introduced the present invention with specific preferred embodiment, many substitute and modification is obvious for the technician of semiconductor applications.For example, the enforcement by various pulse producers can form enable signal.In addition, bandgap cell can be used any in many different realizations, forms reference voltage when enabling bandgap cell.
Claims (17)
1. method that forms pedestal generator may further comprise the steps:
Band-gap circuit formed to be enabled during the cycle very first time have the reference voltage of a value with generation, and the response cycle very first time and memory device is connected to band-gap circuit and the value of reference voltage is stored on the memory device;
Band-gap circuit formed during second time cycle be under an embargo; And
Pedestal generator is formed second time cycle of response and disconnect so that do not receive reference voltage, comprise described value being remained on the memory device in forming pedestal generator during second time cycle with memory device.
2. according to the process of claim 1 wherein that band-gap circuit is formed the step that has a reference voltage of described value with generation of being enabled to be comprised band-gap circuit is formed with less than hundred-percent dutycycle work during the cycle very first time.
3. according to the method for claim 2, wherein band-gap circuit is formed to comprise band-gap circuit is formed with less than 50 percent dutycycle work less than hundred-percent dutycycle work.
4. according to the method for claim 3, wherein band-gap circuit is formed to comprise band-gap circuit is formed with less than 3 percent dutycycle work less than 50 percent dutycycle work.
5. comprise with the step that produces reference voltage and can produce second voltage that has less than the value of reference voltage value during band-gap circuit was formed on for second time cycle according to the process of claim 1 wherein band-gap circuit formed being enabled during the cycle very first time.
6. according to the method for claim 1, there is the step of the band-gap circuit of the reference voltage of described value to comprise band-gap circuit to be formed the selection reference amplifier that during the cycle very first time, enables band-gap circuit with generation but wherein band-gap circuit is formed being enabled during the cycle very first time, but and during second time cycle, forbids the selection reference amplifier.
7. according to the method for claim 1, also comprise the formation amplifier, this amplifier is connected to and is receiving described value from memory device during the cycle very first time He during second time cycle.
8. have the step of the reference voltage of described value to comprise with generation to form timing circuit has dutycycle with generation pulse according to the process of claim 1 wherein band-gap circuit formed to be enabled during the cycle very first time.
9. method that produces reference voltage may further comprise the steps:
First interim of work period of band-gap reference circuit make bandgap reference circuit with receive working current and with it response produce reference voltage with first value;
Response first is connected to memory element with band-gap reference circuit and storage first value on memory element at interval; With
Forbid band-gap reference circuit in second interim of work period and do not suppress to produce reference voltage so that do not receive working current and respond with it, comprise that response second is at interval with memory element and band-gap reference circuit disconnection and maintenance first value on memory element, wherein, first of the work period at interval less than a hundred per cent.
10. according to the method for claim 9, wherein forbid band-gap reference circuit in case do not receive working current and response suppresses to produce first value with it step comprise make bandgap reference circuit with respond second at interval generation less than second value of first value.
11., also comprise the step that memory element is connected to amplifier with high input impedance according to the method for claim 9.
12. method according to claim 9, but but wherein make bandgap reference circuit with receive working current and with it the response step that produces reference voltage be included in the selection reference amplifier and provide first interim of working current to enable the selection reference amplifier to band-gap reference circuit, but and after first finishes at interval, forbid the selection reference amplifier.
13., also comprise the configuration timing circuit, have the timing signal of asymmetric waveform with generation, and use timing signal to be connected with band-gap reference circuit to receive working current according to the method for claim 9.
14. a reference voltage device comprises:
But selection reference amplifier with output, first input and second input;
First reference transistor with first electric current current-carrying electrode, but the first electric current current-carrying electrode of this first reference transistor is connected to by first and second resistance that are connected in series from selection reference amplifier received current, but wherein first input that is connected to become the selection reference amplifier of second resistance that is connected in series provides voltage;
Second reference transistor with first electric current current-carrying electrode, but the first electric current current-carrying electrode of this second reference transistor is connected to by the 3rd resistance that is connected in series from selection reference amplifier received current, but wherein second input that is connected to become the selection reference amplifier of the 3rd resistance that is connected in series provides voltage; And
Provide timing signal optionally to enable and to forbid the timing circuit of selection reference amplifier but be connected to.
15. reference voltage device according to claim 14, also comprise comparer, but this comparer is connected to from the output of selection reference amplifier and receives output voltage and receive builtin voltage from the first electric current current-carrying electrode of second reference transistor, and correspondingly produces the control signal of the difference between expression output voltage and the builtin voltage.
16., also comprise being connected to receiving output voltage and output voltage being sent to the transistor of memory element according to control signal according to the reference voltage device of claim 15.
17. according to the reference voltage device of claim 16, wherein first reference transistor and second reference transistor all are the transistors in band-gap reference circuit.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/US2003/012082 WO2004099892A1 (en) | 2003-04-18 | 2003-04-18 | Method of forming a reference voltage and structure therefor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1662863A CN1662863A (en) | 2005-08-31 |
| CN100492246C true CN100492246C (en) | 2009-05-27 |
Family
ID=33434334
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB038141604A Expired - Fee Related CN100492246C (en) | 2003-04-18 | 2003-04-18 | Method and structure of forming reference voltage |
Country Status (5)
| Country | Link |
|---|---|
| CN (1) | CN100492246C (en) |
| AU (1) | AU2003234137A1 (en) |
| HK (1) | HK1081283A1 (en) |
| TW (1) | TWI333602B (en) |
| WO (1) | WO2004099892A1 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5068522B2 (en) * | 2006-12-08 | 2012-11-07 | 株式会社リコー | Reference voltage generation circuit |
| US7764059B2 (en) * | 2006-12-20 | 2010-07-27 | Semiconductor Components Industries L.L.C. | Voltage reference circuit and method therefor |
| US9218014B2 (en) * | 2012-10-25 | 2015-12-22 | Fairchild Semiconductor Corporation | Supply voltage independent bandgap circuit |
| KR102455877B1 (en) * | 2016-02-15 | 2022-10-21 | 에스케이하이닉스 주식회사 | Voltage generation circuit and integrated circuit including the same |
| TWI760023B (en) * | 2020-12-22 | 2022-04-01 | 新唐科技股份有限公司 | Reference voltage circuit |
| CN115390610A (en) * | 2022-08-22 | 2022-11-25 | 哲库科技(北京)有限公司 | Power utilization system, frequency control method, chip and storage medium |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4772793A (en) * | 1987-10-05 | 1988-09-20 | The United States Of America As Represented By The United States Department Of Energy | Dead-time compensation for a logarithmic display rate meter |
| US5920182A (en) * | 1997-08-21 | 1999-07-06 | Stmicroelectronics S.A. | "Reset" type power supply voltage monitoring device |
| US6535054B1 (en) * | 2001-12-20 | 2003-03-18 | National Semiconductor Corporation | Band-gap reference circuit with offset cancellation |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5512817A (en) * | 1993-12-29 | 1996-04-30 | At&T Corp. | Bandgap voltage reference generator |
| US6118266A (en) * | 1999-09-09 | 2000-09-12 | Mars Technology, Inc. | Low voltage reference with power supply rejection ratio |
| US6400207B1 (en) * | 2001-04-03 | 2002-06-04 | Texas Instruments Incorporated | Quick turn-on disable/enable bias control circuit for high speed CMOS opamp |
-
2003
- 2003-04-18 AU AU2003234137A patent/AU2003234137A1/en not_active Abandoned
- 2003-04-18 CN CNB038141604A patent/CN100492246C/en not_active Expired - Fee Related
- 2003-04-18 WO PCT/US2003/012082 patent/WO2004099892A1/en not_active Application Discontinuation
-
2004
- 2004-04-02 TW TW093109162A patent/TWI333602B/en not_active IP Right Cessation
-
2006
- 2006-01-26 HK HK06101190.0A patent/HK1081283A1/en not_active IP Right Cessation
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4772793A (en) * | 1987-10-05 | 1988-09-20 | The United States Of America As Represented By The United States Department Of Energy | Dead-time compensation for a logarithmic display rate meter |
| US5920182A (en) * | 1997-08-21 | 1999-07-06 | Stmicroelectronics S.A. | "Reset" type power supply voltage monitoring device |
| US6535054B1 (en) * | 2001-12-20 | 2003-03-18 | National Semiconductor Corporation | Band-gap reference circuit with offset cancellation |
Also Published As
| Publication number | Publication date |
|---|---|
| AU2003234137A1 (en) | 2004-11-26 |
| TW200510986A (en) | 2005-03-16 |
| WO2004099892A1 (en) | 2004-11-18 |
| HK1081283A1 (en) | 2006-05-12 |
| CN1662863A (en) | 2005-08-31 |
| TWI333602B (en) | 2010-11-21 |
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