CN100481503C - 沟槽栅晶体管及其制造 - Google Patents
沟槽栅晶体管及其制造 Download PDFInfo
- Publication number
- CN100481503C CN100481503C CNB2005800074714A CN200580007471A CN100481503C CN 100481503 C CN100481503 C CN 100481503C CN B2005800074714 A CNB2005800074714 A CN B2005800074714A CN 200580007471 A CN200580007471 A CN 200580007471A CN 100481503 C CN100481503 C CN 100481503C
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- Prior art keywords
- trench
- silicon dioxide
- layer
- array
- dioxide layer
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 149
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 74
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 73
- 239000004065 semiconductor Substances 0.000 claims abstract description 31
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 27
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 18
- 238000005530 etching Methods 0.000 claims abstract description 13
- 230000004888 barrier function Effects 0.000 claims description 49
- 239000004020 conductor Substances 0.000 claims description 19
- 210000000746 body region Anatomy 0.000 claims description 18
- 238000003475 lamination Methods 0.000 claims description 15
- 239000011810 insulating material Substances 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 11
- 150000004767 nitrides Chemical class 0.000 abstract description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 229920005591 polysilicon Polymers 0.000 description 11
- 230000000694 effects Effects 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000037361 pathway Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (4)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB0405325.2A GB0405325D0 (en) | 2004-03-10 | 2004-03-10 | Trench-gate transistors and their manufacture |
GB0405325.2 | 2004-03-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1930689A CN1930689A (zh) | 2007-03-14 |
CN100481503C true CN100481503C (zh) | 2009-04-22 |
Family
ID=32117356
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005800074714A Active CN100481503C (zh) | 2004-03-10 | 2005-02-28 | 沟槽栅晶体管及其制造 |
Country Status (6)
Country | Link |
---|---|
US (2) | US7361555B2 (zh) |
EP (1) | EP1728279A2 (zh) |
JP (1) | JP2007528598A (zh) |
CN (1) | CN100481503C (zh) |
GB (1) | GB0405325D0 (zh) |
WO (1) | WO2005088725A2 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102129993B (zh) * | 2010-01-18 | 2012-10-03 | 上海华虹Nec电子有限公司 | 氧化层/氮化层/氧化层侧墙的制作方法 |
Families Citing this family (41)
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US7629646B2 (en) * | 2006-08-16 | 2009-12-08 | Force Mos Technology Co., Ltd. | Trench MOSFET with terraced gate and manufacturing method thereof |
US20080042208A1 (en) * | 2006-08-16 | 2008-02-21 | Force Mos Technology Co., Ltd. | Trench mosfet with esd trench capacitor |
US20080042222A1 (en) * | 2006-08-16 | 2008-02-21 | Force Mos Technology Co., Ltd. | Trench mosfet with copper metal connections |
JP5298432B2 (ja) * | 2007-01-31 | 2013-09-25 | 富士電機株式会社 | 半導体装置およびその製造方法 |
US7851298B2 (en) * | 2007-10-29 | 2010-12-14 | Hynix Semiconductor Inc. | Method for fabricating transistor in a semiconductor device utilizing an etch stop layer pattern as a dummy pattern for the gate electrode formation |
US20090115060A1 (en) * | 2007-11-01 | 2009-05-07 | Infineon Technologies Ag | Integrated circuit device and method |
US8174067B2 (en) | 2008-12-08 | 2012-05-08 | Fairchild Semiconductor Corporation | Trench-based power semiconductor devices with increased breakdown voltage characteristics |
US8304829B2 (en) | 2008-12-08 | 2012-11-06 | Fairchild Semiconductor Corporation | Trench-based power semiconductor devices with increased breakdown voltage characteristics |
US7879686B2 (en) * | 2009-01-16 | 2011-02-01 | Infineon Technologies Austria Ag | Semiconductor device and method for manufacturing |
JP2011233701A (ja) * | 2010-04-27 | 2011-11-17 | Toshiba Corp | 電力用半導体素子 |
US8502346B2 (en) * | 2010-12-23 | 2013-08-06 | Alpha And Omega Semiconductor Incorporated | Monolithic IGBT and diode structure for quasi-resonant converters |
CN102184959B (zh) * | 2011-04-25 | 2016-03-02 | 上海华虹宏力半导体制造有限公司 | 功率mos管及其制造方法 |
US8946091B2 (en) | 2011-04-28 | 2015-02-03 | Lam Research Corporation | Prevention of line bending and tilting for etch with tri-layer mask |
JP5995435B2 (ja) | 2011-08-02 | 2016-09-21 | ローム株式会社 | 半導体装置およびその製造方法 |
KR101736282B1 (ko) * | 2011-11-22 | 2017-05-16 | 한국전자통신연구원 | 반도체 소자 및 반도체 소자의 형성 방법 |
CN103426738B (zh) | 2012-05-17 | 2018-05-18 | 恩智浦美国有限公司 | 具有边缘端部结构的沟槽半导体器件及其制造方法 |
US8946002B2 (en) * | 2012-07-24 | 2015-02-03 | Semiconductor Components Industries, Llc | Method of forming a semiconductor device having a patterned gate dielectric and structure therefor |
JP6062269B2 (ja) | 2013-01-31 | 2017-01-18 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
US9735241B2 (en) | 2013-05-16 | 2017-08-15 | Infineon Technologies Americas Corp. | Semiconductor device with a field plate double trench having a thick bottom dielectric |
DE102013108518B4 (de) * | 2013-08-07 | 2016-11-24 | Infineon Technologies Ag | Halbleitervorrichtung und verfahren zum herstellen derselben |
US9245974B2 (en) | 2014-02-24 | 2016-01-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Performance boost by silicon epitaxy |
DE102014206361A1 (de) * | 2014-04-03 | 2015-10-08 | Robert Bosch Gmbh | Verfahren zur Herstellung einer dielektrischen Feldplatte in einem Graben eines Substrats, nach dem Verfahren erhältliches Substrat und Leistungstransistor mit einem solchen Substrat |
US9343528B2 (en) | 2014-04-10 | 2016-05-17 | Semiconductor Components Industries, Llc | Process of forming an electronic device having a termination region including an insulating region |
US9324784B2 (en) | 2014-04-10 | 2016-04-26 | Semiconductor Components Industries, Llc | Electronic device having a termination region including an insulating region |
DE102014109924B3 (de) * | 2014-07-15 | 2015-11-12 | Infineon Technologies Austria Ag | Halbleitervorrichtung mit Feldelektrode und Felddielektrikum und Verfahren zur Herstellung und elektronische Anordnung |
WO2016008690A1 (en) * | 2014-07-17 | 2016-01-21 | Koninklijke Philips N.V. | Ultrasound transducer arrangement and assembly, coaxial wire assembly, ultrasound probe and ultrasonic imaging system |
DE102015110737B4 (de) * | 2015-07-03 | 2022-09-29 | Infineon Technologies Austria Ag | Halbleitervorrichtung mit einer direkt an einen Mesaabschnitt und eine Feldelektrode angrenzenden Kontaktstruktur |
CN106935637A (zh) * | 2015-12-31 | 2017-07-07 | 无锡华润华晶微电子有限公司 | 一种整流器及其制作方法 |
US11127822B2 (en) | 2016-02-26 | 2021-09-21 | Fuji Electric Co., Ltd. | Semiconductor device and method of manufacturing semiconductor device |
WO2017145197A1 (en) | 2016-02-26 | 2017-08-31 | Fuji Electric Co., Ltd. | Semiconductor device and method of manufacturing semiconductor device |
CN107665921A (zh) * | 2016-07-29 | 2018-02-06 | 朱江 | 一种沟槽半导体装置 |
TWI606519B (zh) * | 2016-09-09 | 2017-11-21 | 帥群微電子股份有限公司 | 溝槽式功率半導體元件及其製造方法 |
US9812535B1 (en) * | 2016-11-29 | 2017-11-07 | Infineon Technologies Austria Ag | Method for manufacturing a semiconductor device and power semiconductor device |
JP6761389B2 (ja) * | 2017-09-19 | 2020-09-23 | 株式会社東芝 | 半導体装置 |
CN109037059A (zh) * | 2018-08-24 | 2018-12-18 | 福建龙夏电子科技有限公司 | 沟槽型二极管器件及其形成方法 |
CN111987142B (zh) * | 2019-05-24 | 2024-05-17 | 长鑫存储技术有限公司 | 沟槽阵列晶体管结构及其制备方法 |
JP7317752B2 (ja) | 2020-03-17 | 2023-07-31 | 株式会社東芝 | 半導体装置 |
EP3944740B1 (en) * | 2020-06-18 | 2024-06-19 | Dynex Semiconductor Limited | Method of forming asymmetric thickness oxide trenches |
CN111755526A (zh) * | 2020-07-24 | 2020-10-09 | 华羿微电子股份有限公司 | 一种Trench MOS器件及制备方法 |
US20230126899A1 (en) * | 2021-10-27 | 2023-04-27 | Texas Instruments Incorporated | Method of reducing integrated deep trench optically sensitive defectivity |
CN114743879A (zh) * | 2022-04-02 | 2022-07-12 | 捷捷微电(上海)科技有限公司 | 一种分离栅mosfet的制作方法 |
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US5567634A (en) * | 1995-05-01 | 1996-10-22 | National Semiconductor Corporation | Method of fabricating self-aligned contact trench DMOS transistors |
US5637898A (en) * | 1995-12-22 | 1997-06-10 | North Carolina State University | Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance |
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FR2779751B1 (fr) * | 1998-06-10 | 2003-11-14 | Saint Gobain Isover | Substrat a revetement photocatalytique |
US5998833A (en) * | 1998-10-26 | 1999-12-07 | North Carolina State University | Power semiconductor devices having improved high frequency switching and breakdown characteristics |
US6413822B2 (en) * | 1999-04-22 | 2002-07-02 | Advanced Analogic Technologies, Inc. | Super-self-aligned fabrication process of trench-gate DMOS with overlying device layer |
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DE19935442C1 (de) | 1999-07-28 | 2000-12-21 | Siemens Ag | Verfahren zum Herstellen eines Trench-MOS-Leistungstransistors |
US6211018B1 (en) * | 1999-08-14 | 2001-04-03 | Electronics And Telecommunications Research Institute | Method for fabricating high density trench gate type power device |
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US6864532B2 (en) * | 2000-01-14 | 2005-03-08 | Denso Corporation | Semiconductor device and method for manufacturing the same |
US6392257B1 (en) * | 2000-02-10 | 2002-05-21 | Motorola Inc. | Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same |
SE519528C2 (sv) * | 2000-08-04 | 2003-03-11 | Ericsson Telefon Ab L M | Anordning i en effekt-MOS-transistor |
US6674124B2 (en) * | 2001-11-15 | 2004-01-06 | General Semiconductor, Inc. | Trench MOSFET having low gate charge |
DE10214151B4 (de) * | 2002-03-28 | 2007-04-05 | Infineon Technologies Ag | Halbleiterbauelement mit erhöhter Durchbruchspannung im Randbereich |
US6872622B1 (en) * | 2002-04-09 | 2005-03-29 | Taiwan Semiconductor Manufacturing Company | Method of forming a capacitor top plate structure to increase capacitance and to improve top plate to bit line overlay margin |
US6566196B1 (en) * | 2002-05-15 | 2003-05-20 | Mosel Vitelic, Inc. | Sidewall protection in fabrication of integrated circuits |
US6940125B2 (en) * | 2002-08-19 | 2005-09-06 | Silicon Storage Technology, Inc. | Vertical NROM and methods for making thereof |
-
2004
- 2004-03-10 GB GBGB0405325.2A patent/GB0405325D0/en not_active Ceased
-
2005
- 2005-02-28 EP EP05708868A patent/EP1728279A2/en not_active Withdrawn
- 2005-02-28 CN CNB2005800074714A patent/CN100481503C/zh active Active
- 2005-02-28 JP JP2007502455A patent/JP2007528598A/ja not_active Withdrawn
- 2005-02-28 US US10/591,352 patent/US7361555B2/en not_active Expired - Fee Related
- 2005-02-28 WO PCT/IB2005/050723 patent/WO2005088725A2/en not_active Application Discontinuation
-
2008
- 2008-03-03 US US12/041,117 patent/US8222693B2/en active Active
Non-Patent Citations (1)
Title |
---|
Characterizing Trench-GatePowerMetal-Oxide-Semiconductor Field Effect TransistorwithMulti-Layer Dielectrics at the Trench Bottom. Ming-Jang LIN,Chorng-Wei LIAW,Fang-LongCHANG and Huang-Chung CHENG.Jpn.J.Appl.Phys,Vol.Vol 42 No.Part 1,NO 11. 2003 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102129993B (zh) * | 2010-01-18 | 2012-10-03 | 上海华虹Nec电子有限公司 | 氧化层/氮化层/氧化层侧墙的制作方法 |
Also Published As
Publication number | Publication date |
---|---|
EP1728279A2 (en) | 2006-12-06 |
US20080150021A1 (en) | 2008-06-26 |
JP2007528598A (ja) | 2007-10-11 |
GB0405325D0 (en) | 2004-04-21 |
WO2005088725A2 (en) | 2005-09-22 |
CN1930689A (zh) | 2007-03-14 |
US7361555B2 (en) | 2008-04-22 |
US20070181975A1 (en) | 2007-08-09 |
WO2005088725A3 (en) | 2006-03-09 |
US8222693B2 (en) | 2012-07-17 |
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