CN100456435C - 衬底处理装置以及半导体设备的制造方法 - Google Patents

衬底处理装置以及半导体设备的制造方法 Download PDF

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Publication number: CN100456435C
Authority: CN; China
Prior art keywords: mentioned; substrate; inert gas; preparation room; exhaust
Prior art date: 2004-11-01
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Active

Application number

CNB2005800307409A

Other languages

English (en)

Chinese (zh)

Other versions

CN101019213A (zh

Inventor

中岛诚世

谷山智志

寿崎健一

高岛义和

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

International Electric Co., Ltd.

Original Assignee

Hitachi Kokusai Electric Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2004-11-01

Filing date

2005-10-26

Publication date

2009-01-28

2005-10-26 Application filed by Hitachi Kokusai Electric Inc filed Critical Hitachi Kokusai Electric Inc

2007-08-15 Publication of CN101019213A publication Critical patent/CN101019213A/zh

2009-01-28 Application granted granted Critical

2009-01-28 Publication of CN100456435C publication Critical patent/CN100456435C/zh

Status Active legal-status Critical Current

2025-10-26 Anticipated expiration legal-status Critical

Links

239000000758 substrate Substances 0.000 title claims abstract description 149
238000004519 manufacturing process Methods 0.000 title claims description 23
239000004065 semiconductor Substances 0.000 title claims description 14
238000012545 processing Methods 0.000 title abstract description 15
239000011261 inert gas Substances 0.000 claims abstract description 157
238000000034 method Methods 0.000 claims description 103
238000002360 preparation method Methods 0.000 claims description 68
230000032258 transport Effects 0.000 claims description 39
239000007789 gas Substances 0.000 abstract description 49
238000009423 ventilation Methods 0.000 description 35
230000007613 environmental effect Effects 0.000 description 24
238000007789 sealing Methods 0.000 description 18
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 14
239000002245 particle Substances 0.000 description 13
238000004140 cleaning Methods 0.000 description 9
230000015572 biosynthetic process Effects 0.000 description 7
229910052757 nitrogen Inorganic materials 0.000 description 7
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
230000003139 buffering effect Effects 0.000 description 4
238000010438 heat treatment Methods 0.000 description 4
238000011068 loading method Methods 0.000 description 4
238000012546 transfer Methods 0.000 description 4
230000004087 circulation Effects 0.000 description 3
230000000052 comparative effect Effects 0.000 description 3
239000000498 cooling water Substances 0.000 description 3
230000006837 decompression Effects 0.000 description 3
239000004519 grease Substances 0.000 description 3
238000012423 maintenance Methods 0.000 description 3
238000009428 plumbing Methods 0.000 description 3
230000005855 radiation Effects 0.000 description 3
229910010271 silicon carbide Inorganic materials 0.000 description 3
238000000137 annealing Methods 0.000 description 2
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
239000000356 contaminant Substances 0.000 description 2
238000006073 displacement reaction Methods 0.000 description 2
230000000694 effects Effects 0.000 description 2
238000011049 filling Methods 0.000 description 2
238000009413 insulation Methods 0.000 description 2
230000003647 oxidation Effects 0.000 description 2
238000007254 oxidation reaction Methods 0.000 description 2
239000001301 oxygen Substances 0.000 description 2
229910052760 oxygen Inorganic materials 0.000 description 2
230000002093 peripheral effect Effects 0.000 description 2
238000010248 power generation Methods 0.000 description 2
238000010926 purge Methods 0.000 description 2
238000012797 qualification Methods 0.000 description 2
230000008093 supporting effect Effects 0.000 description 2
241000220317 Rosa Species 0.000 description 1
229910052581 Si3N4 Inorganic materials 0.000 description 1
229910004298 SiO 2 Inorganic materials 0.000 description 1
238000006701 autoxidation reaction Methods 0.000 description 1
238000010923 batch production Methods 0.000 description 1
239000004020 conductor Substances 0.000 description 1
230000008021 deposition Effects 0.000 description 1
238000010586 diagram Methods 0.000 description 1
238000009826 distribution Methods 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
239000003344 environmental pollutant Substances 0.000 description 1
238000000605 extraction Methods 0.000 description 1
238000005429 filling process Methods 0.000 description 1
230000005484 gravity Effects 0.000 description 1
239000000463 material Substances 0.000 description 1
239000002184 metal Substances 0.000 description 1
231100000719 pollutant Toxicity 0.000 description 1
229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
229920005591 polysilicon Polymers 0.000 description 1
238000005086 pumping Methods 0.000 description 1
239000010453 quartz Substances 0.000 description 1
239000000377 silicon dioxide Substances 0.000 description 1
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
229910052814 silicon oxide Inorganic materials 0.000 description 1
229910001220 stainless steel Inorganic materials 0.000 description 1
239000010935 stainless steel Substances 0.000 description 1
238000007669 thermal treatment Methods 0.000 description 1

Images

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces

Landscapes

Engineering & Computer Science (AREA)
Chemical & Material Sciences (AREA)
Manufacturing & Machinery (AREA)
General Physics & Mathematics (AREA)
Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Chemical & Material Sciences (AREA)
Chemical Kinetics & Catalysis (AREA)
Materials Engineering (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Chemical Vapour Deposition (AREA)

CNB2005800307409A 2004-11-01 2005-10-26 衬底处理装置以及半导体设备的制造方法 Active CN100456435C (zh)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP318194/2004		2004-11-01
JP2004318194		2004-11-01

Publications (2)

Publication Number	Publication Date
CN101019213A CN101019213A (zh)	2007-08-15
CN100456435C true CN100456435C (zh)	2009-01-28

Family

ID=36319067

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CNB2005800307409A Active CN100456435C (zh)	2004-11-01	2005-10-26	衬底处理装置以及半导体设备的制造方法

Country Status (6)

Country	Link
US (1)	US7731797B2 (ja)
JP (1)	JP4498362B2 (ja)
KR (1)	KR100859602B1 (ja)
CN (1)	CN100456435C (ja)
TW (1)	TWI329891B (ja)
WO (1)	WO2006049055A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN104903994A (zh) *	2013-01-15	2015-09-09	株式会社Eugene科技	基板处理装置

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KR100943588B1 (ko) *	2003-09-19	2010-02-23	가부시키가이샤 히다치 고쿠사이 덴키	반도체 장치의 제조 방법 및 기판 처리 장치
JP5043776B2 (ja) *	2008-08-08	2012-10-10	株式会社日立国際電気	基板処理装置及び半導体装置の製造方法
JP5198988B2 (ja) *	2008-09-16	2013-05-15	ルネサスエレクトロニクス株式会社	半導体装置の製造方法
JP5394360B2 (ja) *	2010-03-10	2014-01-22	東京エレクトロン株式会社	縦型熱処理装置およびその冷却方法
JP5805461B2 (ja) *	2010-10-29	2015-11-04	株式会社日立国際電気	基板処理装置および半導体装置の製造方法
JP5779957B2 (ja) *	2011-04-20	2015-09-16	東京エレクトロン株式会社	ローディングユニット及び処理システム
KR101402236B1 (ko) *	2012-05-25	2014-06-02	국제엘렉트릭코리아 주식회사	노즐 유닛 및 그 노즐 유닛을 갖는 기판 처리 설비
JP6445853B2 (ja) *	2014-12-02	2018-12-26	国立研究開発法人産業技術総合研究所	抵抗加熱炉
KR101682154B1 (ko) *	2015-04-14	2016-12-02	주식회사 유진테크	기판처리장치
US9793097B2 (en) *	2015-07-27	2017-10-17	Lam Research Corporation	Time varying segmented pressure control
JP6600408B2 (ja) *	2016-03-24	2019-10-30	株式会社ＫｏｋｕｓａｉＥｌｅｃｔｒｉｃ	基板処理装置、半導体装置の製造方法および記録媒体
CN107968038B (zh) *	2017-11-20	2020-01-21	上海华力微电子有限公司	一种改善hcd氮化硅沉积工艺过程缺陷状况的装置
JP6651591B1 (ja)	2018-09-27	2020-02-19	株式会社ＫｏｋｕｓａｉＥｌｅｃｔｒｉｃ	基板処理装置、半導体装置の製造方法
US11047050B2 (en)	2018-10-30	2021-06-29	Taiwan Semiconductor Manufacturing Co., Ltd.	Semiconductor tool having controllable ambient environment processing zones
JP2020188255A (ja) *	2019-05-16	2020-11-19	エーエスエムアイピーホールディングビー．ブイ．	ウェハボートハンドリング装置、縦型バッチ炉および方法
JP2020188254A (ja) *	2019-05-16	2020-11-19	エーエスエムアイピーホールディングビー．ブイ．	ウェハボートハンドリング装置、縦型バッチ炉および方法
CN110408914B (zh) *	2019-08-28	2021-07-20	理想晶延半导体设备(上海)股份有限公司	管式沉积***
CN112864069A (zh) *	2021-03-10	2021-05-28	新阳硅密（上海）半导体技术有限公司	晶圆片预处理装置
JPWO2023022062A1 (ja) *	2021-08-17	2023-02-23

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JPH0247828A (ja) *	1988-08-10	1990-02-16	Nec Kyushu Ltd	減圧熱ｃｖｄ装置
JPH058936U (ja) *	1991-07-15	1993-02-05	関西日本電気株式会社	半導体製造装置
US5447294A (en) *	1993-01-21	1995-09-05	Tokyo Electron Limited	Vertical type heat treatment system
JP2000058530A (ja) *	1998-06-02	2000-02-25	Tokyo Electron Ltd	真空処理装置

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KR100531629B1 (ko) *	2000-08-11	2005-11-29	동경 엘렉트론 주식회사	기판의 처리장치 및 처리방법
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JP4486489B2 (ja) *	2004-12-22	2010-06-23	東京エレクトロン株式会社	処理方法及び処理装置
JP4790291B2 (ja) *	2005-03-10	2011-10-12	東京エレクトロン株式会社	基板処理方法、記録媒体および基板処理装置

2005
- 2005-10-26 WO PCT/JP2005/019670 patent/WO2006049055A1/ja active Application Filing
- 2005-10-26 US US11/665,217 patent/US7731797B2/en active Active
- 2005-10-26 JP JP2006543201A patent/JP4498362B2/ja active Active
- 2005-10-26 KR KR1020077006315A patent/KR100859602B1/ko active IP Right Grant
- 2005-10-26 CN CNB2005800307409A patent/CN100456435C/zh active Active
- 2005-10-31 TW TW094138122A patent/TWI329891B/zh active

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Publication number	Priority date	Publication date	Assignee	Title
JPH0247828A (ja) *	1988-08-10	1990-02-16	Nec Kyushu Ltd	減圧熱ｃｖｄ装置
JPH058936U (ja) *	1991-07-15	1993-02-05	関西日本電気株式会社	半導体製造装置
US5447294A (en) *	1993-01-21	1995-09-05	Tokyo Electron Limited	Vertical type heat treatment system
JP2000058530A (ja) *	1998-06-02	2000-02-25	Tokyo Electron Ltd	真空処理装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN104903994A (zh) *	2013-01-15	2015-09-09	株式会社Eugene科技	基板处理装置
CN104903994B (zh) *	2013-01-15	2017-04-05	株式会社Eugene科技	基板处理装置

Also Published As

Publication number	Publication date
KR100859602B1 (ko)	2008-09-23
TWI329891B (en)	2010-09-01
JP4498362B2 (ja)	2010-07-07
JPWO2006049055A1 (ja)	2008-08-07
WO2006049055A1 (ja)	2006-05-11
KR20070044497A (ko)	2007-04-27
CN101019213A (zh)	2007-08-15
TW200620427A (en)	2006-06-16
US20080134977A1 (en)	2008-06-12
US7731797B2 (en)	2010-06-08

Legal Events

Date	Code	Title	Description
2007-08-15	C06	Publication
2007-08-15	PB01	Publication
2007-10-10	C10	Entry into substantive examination
2007-10-10	SE01	Entry into force of request for substantive examination
2009-01-28	C14	Grant of patent or utility model
2009-01-28	GR01	Patent grant
2018-12-18	TR01	Transfer of patent right	Effective date of registration: 20181128 Address after: Tokyo, Japan, Japan Patentee after: International Electric Co., Ltd. Address before: Tokyo, Japan, Japan Patentee before: Hitachi Kunisai Electric Corp.
2018-12-18	TR01	Transfer of patent right

Publication	Publication Date	Title
CN100456435C (zh)	2009-01-28	衬底处理装置以及半导体设备的制造方法
CN101834119B (zh)	2012-04-04	衬底处理装置
US8277161B2 (en)	2012-10-02	Substrate processing apparatus and manufacturing method of a semiconductor device
KR20060126602A (ko)	2006-12-07	기판처리장치 및 반도체장치의 제조방법
US20120083120A1 (en)	2012-04-05	Substrate processing apparatus and method of manufacturing a semiconductor device
JP2012023073A (ja)	2012-02-02	基板処理装置および基板の製造方法
KR100905262B1 (ko)	2009-06-29	기판 처리 장치 및 반도체 장치의 제조 방법
JP2007095879A (ja)	2007-04-12	基板処理装置
JPH06224145A (ja)	1994-08-12	処理装置
JP2007088177A (ja)	2007-04-05	基板処理装置
JP5785062B2 (ja)	2015-09-24	基板処理装置及び半導体装置の製造方法
JP2003092329A (ja)	2003-03-28	基板処理装置
JP2004339566A (ja)	2004-12-02	基板処理装置
JP2005056905A (ja)	2005-03-03	基板処理装置
JP2006190812A (ja)	2006-07-20	基板処理装置
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JP2010153480A (ja)	2010-07-08	半導体装置の製造方法
JP2005175068A (ja)	2005-06-30	基板処理装置
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JP2006253448A (ja)	2006-09-21	基板処理装置
WO2004057656A1 (ja)	2004-07-08	基板処理装置および半導体装置の製造方法