CN100420024C - 半导体器件的制造方法 - Google Patents
半导体器件的制造方法 Download PDFInfo
- Publication number
- CN100420024C CN100420024C CNB038256290A CN03825629A CN100420024C CN 100420024 C CN100420024 C CN 100420024C CN B038256290 A CNB038256290 A CN B038256290A CN 03825629 A CN03825629 A CN 03825629A CN 100420024 C CN100420024 C CN 100420024C
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- China
- Prior art keywords
- film
- mentioned
- strong dielectric
- semiconductor device
- formation process
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 238000000034 method Methods 0.000 title claims abstract description 120
- 239000004065 semiconductor Substances 0.000 title claims abstract description 58
- 230000008569 process Effects 0.000 claims abstract description 64
- 239000003990 capacitor Substances 0.000 claims abstract description 50
- 238000004519 manufacturing process Methods 0.000 claims abstract description 41
- 230000015572 biosynthetic process Effects 0.000 claims description 95
- 239000002994 raw material Substances 0.000 claims description 50
- 239000002305 electric material Substances 0.000 claims description 43
- 229910052751 metal Inorganic materials 0.000 claims description 28
- 239000002184 metal Substances 0.000 claims description 28
- 238000002425 crystallisation Methods 0.000 claims description 21
- 230000008025 crystallization Effects 0.000 claims description 21
- 238000005137 deposition process Methods 0.000 claims description 10
- 238000000137 annealing Methods 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 239000012535 impurity Substances 0.000 abstract description 43
- 239000013078 crystal Substances 0.000 abstract description 19
- 230000007547 defect Effects 0.000 abstract description 19
- 239000003989 dielectric material Substances 0.000 abstract 1
- 230000002349 favourable effect Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 51
- 238000009792 diffusion process Methods 0.000 description 26
- 239000011229 interlayer Substances 0.000 description 24
- 239000000758 substrate Substances 0.000 description 19
- 229910052760 oxygen Inorganic materials 0.000 description 11
- 239000010410 layer Substances 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 9
- 239000002245 particle Substances 0.000 description 9
- 239000012491 analyte Substances 0.000 description 7
- 238000002474 experimental method Methods 0.000 description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 229910052745 lead Inorganic materials 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 230000010287 polarization Effects 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 238000010276 construction Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 230000002269 spontaneous effect Effects 0.000 description 4
- 238000005979 thermal decomposition reaction Methods 0.000 description 4
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910000457 iridium oxide Inorganic materials 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000005546 reactive sputtering Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000002309 gasification Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910018182 Al—Cu Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
Landscapes
- Semiconductor Memories (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
Claims (18)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2003/007202 WO2004109804A1 (ja) | 2003-06-06 | 2003-06-06 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1714453A CN1714453A (zh) | 2005-12-28 |
CN100420024C true CN100420024C (zh) | 2008-09-17 |
Family
ID=33495937
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB038256290A Expired - Fee Related CN100420024C (zh) | 2003-06-06 | 2003-06-06 | 半导体器件的制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7029984B2 (zh) |
JP (1) | JP4313797B2 (zh) |
CN (1) | CN100420024C (zh) |
WO (1) | WO2004109804A1 (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4601896B2 (ja) * | 2002-10-30 | 2010-12-22 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
JP2007036126A (ja) * | 2005-07-29 | 2007-02-08 | Fujitsu Ltd | 半導体装置とその製造方法 |
JP2007266429A (ja) * | 2006-03-29 | 2007-10-11 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP2007318018A (ja) * | 2006-05-29 | 2007-12-06 | Toshiba Corp | 強誘電体メモリセル及び強誘電体メモリセルの製造方法 |
KR100819003B1 (ko) * | 2006-10-20 | 2008-04-02 | 삼성전자주식회사 | 비휘발성 메모리 소자 제조 방법 |
EP3656426B1 (en) | 2012-11-21 | 2023-05-17 | Amgen Inc. | Drug delivery device |
US10611868B2 (en) * | 2015-11-25 | 2020-04-07 | Toray Industries, Inc. | Ferroelectric memory element, method for producing same, memory cell using ferroelectric memory element, and radio communication device using ferroelectric memory element |
US10861862B1 (en) * | 2019-06-24 | 2020-12-08 | Wuxi Petabyte Technologies Co, Ltd. | Ferroelectric memory devices |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002212129A (ja) * | 2001-01-12 | 2002-07-31 | Mitsubishi Materials Corp | 金属キレート錯体及びその合成方法 |
CN1371124A (zh) * | 2000-12-20 | 2002-09-25 | 富士通株式会社 | 铁电存储器集成电路的高质量铅锆钛酸盐膜的制造工艺 |
US20030062554A1 (en) * | 2001-09-13 | 2003-04-03 | Atsushi Sakurai | Oriented ferroelectric thin-film device and method for manufacturing the same |
JP2003133531A (ja) * | 2001-10-26 | 2003-05-09 | Fujitsu Ltd | 電子装置とその製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3206105B2 (ja) * | 1992-06-09 | 2001-09-04 | セイコーエプソン株式会社 | 誘電体素子の製造方法及び半導体記憶装置 |
JP3133922B2 (ja) | 1995-06-09 | 2001-02-13 | シャープ株式会社 | 強誘電体薄膜被覆基板、その製造方法、及びキャパシタ構造素子 |
AU1539900A (en) * | 1998-11-30 | 2000-06-19 | Interuniversitair Micro-Elektronica Centrum | Method of fabrication of a ferro-electric capacitor and method of growing a pzt layer on a substrate |
US6682772B1 (en) * | 2000-04-24 | 2004-01-27 | Ramtron International Corporation | High temperature deposition of Pt/TiOx for bottom electrodes |
JP2002208678A (ja) | 2001-01-11 | 2002-07-26 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP4282245B2 (ja) * | 2001-01-31 | 2009-06-17 | 富士通株式会社 | 容量素子及びその製造方法並びに半導体装置 |
JP4428500B2 (ja) * | 2001-07-13 | 2010-03-10 | 富士通マイクロエレクトロニクス株式会社 | 容量素子及びその製造方法 |
JP2003068991A (ja) * | 2001-08-23 | 2003-03-07 | Fujitsu Ltd | 半導体装置及びその製造方法 |
-
2003
- 2003-06-06 WO PCT/JP2003/007202 patent/WO2004109804A1/ja active Application Filing
- 2003-06-06 CN CNB038256290A patent/CN100420024C/zh not_active Expired - Fee Related
- 2003-06-06 JP JP2005500556A patent/JP4313797B2/ja not_active Expired - Fee Related
-
2005
- 2005-05-25 US US11/136,564 patent/US7029984B2/en not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1371124A (zh) * | 2000-12-20 | 2002-09-25 | 富士通株式会社 | 铁电存储器集成电路的高质量铅锆钛酸盐膜的制造工艺 |
JP2002212129A (ja) * | 2001-01-12 | 2002-07-31 | Mitsubishi Materials Corp | 金属キレート錯体及びその合成方法 |
US20030062554A1 (en) * | 2001-09-13 | 2003-04-03 | Atsushi Sakurai | Oriented ferroelectric thin-film device and method for manufacturing the same |
JP2003133531A (ja) * | 2001-10-26 | 2003-05-09 | Fujitsu Ltd | 電子装置とその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2004109804A1 (ja) | 2004-12-16 |
CN1714453A (zh) | 2005-12-28 |
US20050215006A1 (en) | 2005-09-29 |
JPWO2004109804A1 (ja) | 2006-07-20 |
US7029984B2 (en) | 2006-04-18 |
JP4313797B2 (ja) | 2009-08-12 |
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C14 | Grant of patent or utility model | ||
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Owner name: FUJITSU MICROELECTRONICS CO., LTD. Free format text: FORMER OWNER: FUJITSU LIMITED Effective date: 20081107 |
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Effective date of registration: 20081107 Address after: Tokyo, Japan Patentee after: FUJITSU MICROELECTRONICS Ltd. Address before: Kawasaki, Kanagawa, Japan Patentee before: Fujitsu Ltd. |
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Owner name: FUJITSU SEMICONDUCTOR CO., LTD. Free format text: FORMER NAME: FUJITSU MICROELECTRON CO., LTD. |
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CP01 | Change in the name or title of a patent holder |
Address after: Japan's Kanagawa Prefecture Yokohama Patentee after: FUJITSU MICROELECTRONICS Ltd. Address before: Japan's Kanagawa Prefecture Yokohama Patentee before: Fujitsu Microelectronics Ltd. |
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CP02 | Change in the address of a patent holder |
Address after: Japan's Kanagawa Prefecture Yokohama Patentee after: FUJITSU MICROELECTRONICS Ltd. Address before: Tokyo, Japan Patentee before: Fujitsu Microelectronics Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080917 Termination date: 20200606 |