CN100405536C - Substrate processing system - Google Patents
Substrate processing system Download PDFInfo
- Publication number
- CN100405536C CN100405536C CNB2005101173155A CN200510117315A CN100405536C CN 100405536 C CN100405536 C CN 100405536C CN B2005101173155 A CNB2005101173155 A CN B2005101173155A CN 200510117315 A CN200510117315 A CN 200510117315A CN 100405536 C CN100405536 C CN 100405536C
- Authority
- CN
- China
- Prior art keywords
- measuring cell
- air
- base plate
- processing system
- carrying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
Abstract
The invention relates to a base process system which inhibits pollution of a testing device generated by process gas. A measurement area (40) for forming a measurement chamber (S) is arranged in the frame (30) of a measurement device (4). The measurement chamber (S) adopts a convey hole (33) of a wafer (W) as a lateral, which forms a rectangle shape. A carry board (42) is arranged in the measurement chamber (S). The optical system (45) is positioned at the oppose side of the top of the division measurement chamber (S). Hence, the vent of the optical system (45) and the measurement chamber (S) is broken. An air supplying hole (50) for providing clean air is arranged on the measurement chamber (S) towards convey hole (33). The wafer (W) is transmitted in the measurement chamber (S) to test the wafer (W) and the clean air is provided in the convey hole (33) from the air supplying hole and flows in the measurement chamber (S) from the convey hole (33).
Description
Technical field
The present invention relates to have the base plate processing system of gas treatment equipment and determinator.
Background technology
For example the etch processes in making semiconductor device technology is carried out with Etaching device usually, and this Etaching device is loaded in the base plate processing system.Base plate processing system has usually to be moved into wafer loading-unloading portion of taking out of, wafer is sent into Handling device of Etaching device etc. from loading-unloading portion.The wafer that does not have to handle is sent into loading-unloading portion, this carrying wafers is carried out etching behind Etaching device, after this make it turn back to loading-unloading portion with Handling device with Handling device.
For the wafer of having finished above-mentioned etch processes, be necessary to check size and thickness, the etch depth etc. of pattern of the etching-film of the covering after the etching.These check to use mostly all the time has the determinator of optical system to carry out, and this determinator and base plate processing system branch are arranged.Therefore need from base plate processing system, take out the wafer of finishing etch processes, be transported to various determinators, because this checks handling time that need be very long.So in recent years in order to shorten the handling time of wafer W, improve the productivity ratio of wafer, proposed pack into scheme in the base plate processing system of determinator.(for example with reference to patent documentation 1).
But in the above-mentioned etch processes of carrying out with base plate processing system, the corrosive gas that for example uses HCl, HBr etc. is as handling gas.Under the situation in base plate processing system that determinator is packed into, have this corrosive gas flows into determinator from Etaching device situation.In addition, the wafer of finishing etch processes in Etaching device has the situation of bringing corrosive gas into when sending into determinator.Therefore the optical system of determinator reduces the mensuration precision of determinator owing to corrosive gas is corroded.The component life that constitutes optical system in addition shortens.Because of the corrosion of optical system causes the inside of determinator contaminated, pollute the wafer that is transported to determinator, waste product increases as a result.In order to solve such problem, for example also can consider to make the optical system components of determinator all to become the parts of anti-corrosion specification, but need very high cost in this case, be unpractical.
The patent documentation spy opens the 2002-280279 communique
Summary of the invention
Given this present invention puts the invention of finishing, and its objective is provides a kind of base plate processing system, can prevent the corrosion and the pollution that the optical detecting of determinator are partly caused because of the processing gas that uses in the gas treatment equipment of Etaching device etc.
In order to achieve the above object, base plate processing system of the present invention is characterised in that, has integrated formation: use the gas treatment equipment of handling the gas treatment substrate; The determinator that substrate processed in the above-mentioned gas processing unit is measured; Will be at the processed board carrying of above-mentioned gas processing unit Handling device to the said determination device, the said determination device has: the mounting portion of mounting substrate; Light shine on the substrate that is positioned in this mounting portion the optical detecting portion that substrate is measured; Hold above-mentioned mounting portion, the measuring cell that substrate in the above-mentioned mounting portion is measured, on the said determination chamber, be formed with and utilize above-mentioned Handling device, the wall blocking that space in the above-mentioned optical detecting portion and the ventilation between the said determination chamber are configured this measuring cell the board carrying mouth of board carrying to above-mentioned mounting portion.
According to the present invention, because the gas passage is blocked with the wall of measuring cell by the measuring cell in determinator substrate measured and optical detecting portion, so the gas in board carrying mouth inflow measuring cell does not contact with optical detecting portion.Even therefore handle the corrosive gas that contains in the gas, for example flow into determinator, or be brought in the determinator by substrate from gas treatment equipment, can not corrode optical detecting portion yet.Its result can keep can carrying out the mensuration of standard to substrate with the mensuration precision of optics determination part to substrate.Can prolong the life-span of optical detecting portion in addition.Have again owing to there is not contaminated situation in the optical detecting portion corrosion back determinator, also can not pollute the substrate of moving in the determinator.Its result can reduce the waste product substrate.
Also can implement on the face anticorrosion of above-mentioned processing gas is processed in indoor the exposing of said determination.At this moment, handle the corrosion that gas causes, can prevent because of corrosion contamination measuring cell and substrate owing to can prevent the measuring cell internal cause.
The said determination chamber also can form in the mode of only holding above-mentioned mounting portion.At this moment, because the volume of measuring cell is suppressed to minimum limit, can be suppressed to minimum limit to corrosion in the measuring cell that causes because of processing gas and pollution.Implement anticorrosion in this external such measuring cell and add man-hour,, can reduce the cost that anticorrosion processing needs because its area is suppressed at minimum limit.The said determination chamber also can form the rectangular shape of aforesaid substrate carrying port as a side.
The said determination device also has framework and is arranged on the mensuration zone (block) that is used to form the said determination chamber in this framework, and said determination zone profile is made rectangular shape, and the said determination chamber also can form concavity on the side wall surface of measuring the zone.
Above-mentioned optical detecting portion can be arranged in the said determination zone, is arranged on the internal face that constitutes the said determination chamber and constitutes in the hollow bulb between the outside wall surface of said determination zone profile.
Block and above-mentioned optical detecting portion between the wall of said determination chamber on, also can form the portion that sees through that sees through from the light of above-mentioned optical detecting portion irradiation.In addition, at the above-mentioned portion that the sees through protection baffle plate that also can be provided for portion that above-mentioned processing Buchholz protection is seen through in the portion that sees through.At this moment, for example when measuring, close through portion's protection and use baffle plate, can close through portion, therefore, can suppress to cause corrosion and pollution through portion because of the processing gas in the measuring cell with respect to measuring cell without optical detecting portion.Its result sees through portion rightly from the light of optical detecting portion, can keep the mensuration precision of optical detecting portion.
With the side wall surface of the said determination chamber of aforesaid substrate carrying port subtend position on, also can form the air supply opening that the gas of cleaning is provided towards the aforesaid substrate carrying port.At this moment,, utilize the air-flow of this cleaning owing to provide the gas of cleaning to the board carrying mouth from the side wall surface of said determination chamber, can be flowing into the processing gas dilution of measuring cell from the board carrying mouth, or push back.Its result can suppress to cause corrosion and pollution to measuring cell because of handling gas.
Swim near the exhaust outlet that discharges the aforesaid substrate carrying port of a side from above-mentioned mounting subordinate also can forming the clean air that above-mentioned air supply opening is provided on the said determination chamber.At this moment, owing to can make the clean air that provides from air supply opening by discharging in the measuring cell, so for example can purifying measuring indoor.
Above-mentioned exhaust outlet also can form in the bottom surface of said determination chamber.At this moment, can discharge effectively heavier-than-air, be trapped in corrosive gas on the bottom surface easily.
The aforesaid substrate treatment system also can have: the baffle plate that opens and closes the aforesaid substrate carrying port; And control device, when opening above-mentioned baffle plate, carry out air feed from above-mentioned air supply opening, stop exhaust from above-mentioned exhaust outlet, when closing above-mentioned baffle plate, carry out from the air feed of above-mentioned air supply opening with from the exhaust of above-mentioned exhaust outlet.At this moment, carry out air feed when opening baffle plate, can suppress to handle gas and flow in the measuring cell.This is external to carry out air feed and exhaust when closing baffle plate, can make in the measuring cell to clean, and keep the state of its cleaning.
The aforesaid substrate treatment system can also have: the air introducing port that imports the outside air of said determination device; Be communicated to the air supply channel of above-mentioned air supply opening from above-mentioned air introducing port; Remove filter from the impurity that passes through the air in the above-mentioned supply air line.
Move into the outside of taking out of mouth at aforesaid substrate and also can form down current, set for from the gas supply flow of above-mentioned air supply opening littler than the flow of above-mentioned down current.At this moment, according to inventor's checking, in the interflow portion of the air-flow and the down current of the indoor above-mentioned cleaning of said determination, the situation that does not have air turbulence, dust to fly upward.The contamination by dust that the substrate that its result carries to the board carrying mouth can not be flown upward.
The cowling panel that air-flow to the interflow portion of indoor above-mentioned cleaning gas tream of said determination and above-mentioned down current carries out rectification also can be set on the aforesaid substrate carrying port.At this moment, owing to can prevent that near the dust the board carrying mouth from flying upward, so the contamination by dust that the substrate of carrying to the board carrying mouth can not be flown upward.
In order to proofread and correct the mensuration of being undertaken by above-mentioned optical detecting portion; be provided with by light-struck reference component in that said determination is indoor, on the said reference parts, also can be provided for protection baffle plate at above-mentioned processing Buchholz protection reference component from above-mentioned optical detecting portion.Therefore at this moment, close the protection baffle plate when not using, can close reference component, can suppress because of handling the corrosion and the pollution of the reference component that gas causes with respect to measuring cell.
According to the present invention, can keep the mensuration precision in the determinator, prolong the life-span of determinator, prevent the pollution of the substrate measured with determinator.
Description of drawings
Fig. 1 is the vertical view of the base plate processing system of schematic representation present embodiment.
Fig. 2 is the key diagram of the vertical section of schematic representation assay device structures.
Fig. 3 is the stereogram that the zone is measured in expression.
Fig. 4 is the key diagram of vertical section of the mensuration zone inner structure of expression determinator.
Fig. 5 is the key diagram of the state in the determinator when representing not carry out measuring.
Fig. 6 is the key diagram of the state in the determinator of expression when measuring.
Fig. 7 is the key diagram that expression is equipped with the reference plate and the vertical section of the mounting plate of protection baffle plate.
Fig. 8 measures the key diagram of the vertical section of the structure in the zone when penetrating window is installed with the protection baffle plate on penetrating window.
Fig. 9 is the key diagram of the structure of the determinator when being illustrated in carrying port cowling panel being installed.
Symbol description
1 base plate processing system; 3 Etaching devices; 4 determinators; 5 measure the zone; 10 carrying rooms; 30 frameworks; 33 carrying ports; 42 mounting plates; 45 optical systems; 50 air supply openings; 60 exhaust outlets; 70 carrying baffle plates; The S measuring cell; The W wafer
Embodiment
Below preferred implementation of the present invention is described.Fig. 1 is the vertical view of the structure of the base plate processing system 1 in the schematic representation present embodiment.
Base plate processing system 1 for example has: mounting is held the box mounting portion 2 of a plurality of box C of wafer W; Etaching device 3 as the gas treatment equipment that wafer W is carried out etch processes; The determinator 4 of the thickness of the etched film on the wafer W after the mensuration etch processes; Carry out the location division 5 of wafer W location; Carry out the Handling device 6 of wafer W carrying between these box mounting portions 2, Etaching device 3, determinator 4, location division 5, these apparatus integrations connect.
The carrying mechanism 20 of carrying wafer W for example is set in carrying room 10.Carrying mechanism 20 for example has the carrying arm 20a that keeps wafer W, by this carrying arm 20a being advanced or retreating, and for example can be to box mounting portion 2, determinator 4, load locking room 11 carrying wafer W.For example as shown in Figure 2, be provided with the clean air air supply unit U of air feed downwards that to be adjusted to set point of temperature, humidity on the top of carrying room 10, utilize this air supply unit U in carrying room 10, to form down current, can make the gaseous environment of keeping the cleaning of regulation in the carrying room 10.In addition as shown in Figure 1, in load locking room 11, for example be arranged on the carrying mechanism 21 of carrying wafer W between load locking room 11 and the Etaching device 3.
Etaching device 3 for example imports the processing gas of HCl, HBr etc. in chamber, simultaneously mounting have wafer W lower electrode and and the upper electrode of its subtend between, apply High frequency power, make it produce plasma, etched film that can the etched wafer surface.
As shown in Figure 2, determinator 4 for example has profile for being the framework 30 of about rectangular shape substantially, and this framework 30 is close on the carrying room 10.For example be divided into the determination part 31 on top and the control part 32 of bottom in the framework 30.On the contact site of determination part 31 and carrying room 10, be formed for carrying the square carrying port of being roughly of wafer W 33.For example accommodate the instrument that carries out the mensuration necessary control system in the determination part 31 in the control part 32.
The mensuration zone 40 that forms the measuring cell S of wafer W is arranged in the determination part 31.As shown in Figure 3, mensuration zone 40 forms profile and is roughly rectangular shape.On the outside wall surface 41 of carrying room 10 1 sides of measuring zone 40, be formed with the recess of measuring cell S.In measuring cell S, carrying port 33 is roughly the shape of cuboid as a side.That is, measuring on the zone 40, be formed with the bottom outlet that has of rectangular shape from outside wall surface 41 to horizontal direction, this has bottom outlet to become measuring cell S, and its opening is called carrying port 33.
In measuring cell S, for example be provided as the mounting plate 42 of the discoidal mounting portion of mounting wafer W.As shown in Figure 4, for example be hollow between the internal face 43 of the outside wall surface 41 of the formation profile in mensuration zone 40 and formation measuring cell S.In the hollow space 40a on the top between the end face internal face 43a of the outside wall surface 41 of measuring zone 40 and measuring cell S, configuration is as the optical system 45 of the optical detecting portion of irradiation portion with light and light accepting part etc.Block gas passage between optical system 45 and the measuring cell S with the internal face 43 of measuring cell S, for example processing gas that flows into from carrying port 33 is contact optical system 45 not.Optical system 45 for example to the wafer W irradiates light on the mounting plate 42 and its reverberation of reception, can be measured the thickness of the etched film on the wafer W by detecting its reflectivity.
End face internal face 43a at measuring cell S forms as the transparent penetrating window 46 that sees through portion with the position that optical system 45 is faced mutually.Optical system 45 can receive its reverberation by this penetrating window 46 the wafer W irradiates light of light on mounting plate 42.
For example between the outside wall surface 41 in the bottom surface of measuring cell S internal face 43b and the mensuration zone 40 below it, be formed with bottom hollow space 40b.For example being provided with in the hollow space 40b of bottom makes mounting plate 42 in the mobile travel mechanism 47 of carrying port 33 directions (directions X).Travel mechanism 47 for example is formed with guide rail 48 and moves freely on this guide rail 48 and from the following objective table 49 of surface bearing mounting plate 42 towards directions X.Objective table 49 for example can move on guide rail 48 with the drive division that is contained in inner motor etc.
With the internal face 43c of the measuring cell S of carrying port 33 subtend positions on, form air supply opening 50.Air supply opening 50 is towards carrying port 33 1 sides.For example as shown in Figure 2, the supply air line 52 by the air introducing port 51 that forms on framework 30 is connected on the air supply opening 50.Supply air line 52 for example from the inside of air supply opening 50 by mensuration zone 40, in the determination part 31 of measuring regional 40 outsides, is communicated with on air introducing port 51.Supply air line 52 is provided with and is used for sucking the fan 53 of framework 30 air outside and is used for removing the filter 54 of the impurity of dust etc. from being inhaled into air in the supply air line 52.After the air that imports from air introducing port 51 with fan 53 becomes the air of cleaning with filter 54, from air supply opening 50 air feed in measuring cell S.The air that is provided in measuring cell S, can flow out from carrying port 33 after on the mounting plate 42 to carrying port 33 1 side flow.Flow into processing gas in the measuring cell S by the dilution of this air from carrying port 33, or the body of will regulating the flow of vital energy pushes back herein, measuring cell S can be maintained in the gaseous environment of clean air.
For example the revolution of fan 53 can be adjusted with control device 60, and control device 60 is adjusted the revolution of fan 53, and the gas flow that provides in measuring cell S can be provided.
On the internal face 43b of the bottom surface of measuring cell S bottom surface, form exhaust outlet 60.For example as shown in Figure 3, exhaust outlet 60 is with respect to the air feed of air supply opening 50, and two positions form near the carrying port 33 of the downstream of mounting plate 42 side.As shown in Figure 2, be connected with the gas exhaust piping 62 of the outlet 61 that forms on the side of carrying room 10 1 sides that are communicated with framework 30 on the exhaust outlet 60.Gas exhaust piping 62 is for example by measuring zone 40, control part 32 connections on outlet 61.On exhaust outlet 60, for example be arranged on the exhaust screen 63 that horizontal direction is slided.The exhaust screen drive division 64 that utilization has cylinder (cylinder) etc. carries out the switching of this exhaust screen 63.
On framework 30, be arranged on above-below direction and move, open and close the baffle plate 70 of carrying port 30.This carrying baffle plate 70 for example utilizes the carrying barrier driving portion 71 with cylinder etc. to carry out.
The action of exhaust screen drive division 64 and carrying barrier driving portion 71 is for example controlled with control device 60.Therefore control device 60 can open and close exhaust screen 63 and carrying baffle plate 70 constantly in regulation.
The face that exposes for processing gas in measuring cell S, for example the surface of the internal face 43 of measuring cell S and mounting plate 42 can be implemented handling the anticorrosion processing of gas.Can use coating Al as anticorrosion processing
2O
3Deng metal oxide film etc. expose the method for the fluorine-type resin coating of the method for face and sintering Teflon (polytetrafluoroethylene) (registered trade mark of Dupont company) etc. with thin film cladding.During this external coating fluorine-type resin,, can obtain excellent corrosion resisting property owing to do not react fully with bronsted lowry acids and bases bronsted lowry.
The following describes the treatment process of the wafer W of in the base plate processing system 1 of above structure, carrying out.In the processing of wafer W, for example in carrying room 10, utilize the clean air of air supply unit U to form down current.At first as shown in Figure 1, the box C that holds untreated wafer W is positioned in the box mounting portion 2, takes out wafer W with the carrying mechanism 20 of carrying room 10 from box C, is moved to location division 5.The wafer W of location is transported to load locking room 11 with carrying mechanism 20 in location division 5, is transported to Etaching device 3 with carrying mechanism 21.The wafer W that is moved to Etaching device 3 is carried out etch processes with predetermined process gas.
The wafer W of finishing etch processes is transported to load locking room 11 with carrying mechanism 21, is transported to determinator 4 with carrying mechanism 20.With the thickness of the etched film on the determinator 4 mensuration wafer W, check the etching state of wafer W.Wafer W after having checked in determinator 4 turns back in the box C of box mounting portion 2 with carrying mechanism 20.
Here, the action of more detailed explanation said determination device 4.In base plate processing system 1 work, the processing gas that leaks from Etaching device 3 flows into carrying room 10 by load locking room 11, or is brought into carrying room 10 attached to the processing gas on the wafer W by this wafer W.
At first in determinator 4, do not carry out the mensuration of wafer W, when wafer W is not moved into, for example as shown in Figure 5, close carrying baffle plate 70.Start fan 53 in addition, the air of cleaning is provided to measuring cell S from air supply opening 50.Open exhaust screen 63, make by the clean air in the measuring cell S and discharge from exhaust outlet 60.Like this when not carrying out the mensuration of wafer W with determinator 4, form the air-flow of the air of the cleaning that the end to end in the measuring cell S that closes flows through, remain in the measuring cell S in the gaseous environment of clean air.
As shown in Figure 6, when the carrying arm 20a that utilizes carrying mechanism 20 sends into wafer W in the determinator 4, open carrying baffle plate 70.Keeping under the state of air supply opening 50 air feed, closing exhaust outlet 60 by the exhaust screen 63 of exhaust outlet 60.In measuring cell S, form the air-flow of the air of the cleaning that flows into, flows out from carrying port 33 from air supply opening 50 like this.Utilize this air-flow to flow into the processing gas dilution of measuring cell S by carrying port 33, or push back from carrying room 10 1 sides.
The gas flow that provide from air supply opening 50 this moment is configured to littler than the flow of the down current of the outside carrying room 10 of carrying port 60.The air-flow that flows out from measuring cell S and the interflow of down current can be carried out smoothly like this, can be suppressed at carrying port 60 around produce eddy current etc.The rolled-up situation of impurity such as dust in the carrying room 10 can not take place in its result.
Open carrying port 33 with carrying baffle plate 70, for example mounting plate 42 moves to carrying port 33 1 sides (positive direction one side of directions X) wafer W and is moved, is positioned on the mounting plate 42 from carrying arm 20a.When wafer W was positioned on the mounting plate 42, mounting plate 42 just moved along the opposite direction of directions X, and wafer W moves to locating of optical system 45 belows regulation.This rear optical system 45 light shines on the wafer W, receives its reverberation, for example measures the thickness of the etched film on the wafer W.Form the air-flow to the cleaning of carrying port 33 1 side bottom horizontal flow sheet around here in measuring cell S, for example the processing gas of being brought into by wafer W turns back to carrying port 33 1 sides.
After finishing with the mensuration of optical system 45, wafer W is moved on the carrying arm 20a once more, takes out of from determinator 4.After taking out of wafer W, close carrying baffle plate 70 once more, open the exhaust screen 63 of exhaust outlet 60, under measuring cell S closing state, in measuring cell S, form from the air-flow of air supply opening 50 to the clean air of exhaust outlet 60.
Adopt above execution mode, in determinator 4, be formed on the measuring cell S of carrying port 33 openings, owing to block the gas passage of optical system 45 and measuring cell S with the wall of this measuring cell S, so the processing gas that uses in Etaching device 3 can contact optical system 45, the corrosive gas corrosion of the sour gas that optical system 45 can processed gas contain etc. and polluting.Even therefore long-time the use, the mensuration precision of optical system 45 does not reduce yet, and can prolong the life-span of optical system 45.In addition, do not have the pollution that causes optical system 45 resembling now because of processing gas, pollute the situation of the wafer W in the pollution measurement device 4 thus.
Because the face that exposes in the measuring cell S is carried out corrosion-resistant processing, do not cause corrosion in the measuring cell S so do not have because of flowing into corrosive gas in the measuring cell S.So contaminant accumulation after stain wafer W that can not cause because of the corrosion in the measuring cell S.
Be arranged in the framework 30 of determinator 4 measuring zone 40, form with this mensuration zone 40 and only hold the measuring cell S of mounting plate 42, so the part that exposes by carrying port 33 carrying rooms 10 1 sides can be suppressed to minimum limit.Therefore the area that carries out corrosion-resistant processing is diminished, reduce the cost that corrosion-resistant processing needs significantly.Part beyond the optical system in the determinator 4 45 in addition is because the contact position body of regulating the flow of vital energy not, so can reduce corrosion and pollute.
Because optical system 45 is arranged in the top hollow space 40a that measures zone 40, so optical system 45 is not only not contact measurement chamber S, nor the gaseous environment in 40 outsides, contact measurement zone can also reduce the corrosion and the pollution of optical system 45.
Owing to transparency window 46 is arranged on the top inner wall face 43a of measuring cell S, can carries out appropriate mensuration with 45 pairs of wafer W of optical system.
Because on the internal face 43c of the measuring cell S of the position relative, the air supply opening 50 towards carrying port 33 1 sides being set with carrying port 33, thus can dilute from the processing gas of carrying room 10 1 side inflow measuring cell S, or it is pushed back.In addition, can be with the impurity extrusion flow of corrosive gas of bringing into by the wafer W of moving in the measuring cell S etc. to carrying room 10 1 sides.Can suppress the pollution in the measuring cell S that corrosive gas etc. causes like this.
Formation air introducing port 51 on framework 30, because fan 53 and filter 54 are arranged on the supply air line 52 that is connected air introducing port 51 and air supply opening 50, so can offer in the measuring cell S after the air cleaning in framework 30 outsides.At this moment, owing to can utilize framework 30 extraneous gas on every side, the air to measuring cell S provides cleaning can reduce the cost that purifies air and need.
Owing near the carrying port 33 of measuring cell S, form exhaust outlet 60, the air that provides from air supply opening 50 is discharged after on the mounting plate 42.Therefore for example when wafer W not being measured, close carrying baffle plate 70, can make in the measuring cell S to purify.In addition since on the internal face 43b of measuring cell S bottom surface exhaust outlet 60, so can discharge effectively heavier-than-air, be trapped in the corrosive gas of HCl, HBr etc. on the internal face 43b of bottom surface easily.In addition since than carrying port 33 more by the framework 30 of following carrying room 10 1 sides on formation pass through the outlet 61 of exhaust outlet 60, so can make down current interflow, can be discharged to the outside of base plate processing system 1 by this down current by gas in the measuring cell S and carrying room 10.Therefore can utilize existing down current rightly the emission gases from measuring cell S to be discharged.
When not carrying out wafer W mensuration with above execution mode, close carrying baffle plate 70 with control device 60, carry out by the air feed of air supply opening 50 with from the exhaust of exhaust outlet 60, and for example also can close under the state of carrying baffle plate 70 with control device 60 this moment, carry out air feed and the exhaust of stipulated time, after purifying in the measuring cell S, stop this air feed and exhaust.The state that also can keep at this moment, cleaning in the measuring cell S.
In addition in the above-described embodiment, when carrying out wafer W mensuration, open carrying baffle plate 70 with control device 60, carry out air feed from air supply opening 50, stop from the exhaust of exhaust outlet 60, but also can for example close carrying baffle plate 70 this moment, carry out above-mentioned air feed and exhaust two aspects with control device 60.At this moment, send into wafer W in the measuring cell S after, close measuring cell S, the air feed and the exhaust of clean air in the measuring cell S that carries out this is closed.Therefore when measuring wafer W, handle gas and cut off with carrying baffle plate 70, utilize, can keep cleaning in the measuring cell S from the air feed of air supply opening 50 with from the exhaust of exhaust outlet 60 from the inflow of carrying room 10 to measuring cell S.
In the optical system of in above execution mode, putting down in writing 45, need to proofread and correct the reference component of usefulness.Reference component for example is to have the known material of predesignating, the parts of surface state, utilizes optical system 45 reality that reference component is measured, and obtains to be used to measure the intrinsic reference data of various determinators of wafer W needs.
For example as shown in Figure 7, form recess 42a, imbed reference plate 90 as reference component at its recess 42a at the surperficial assigned positions of mounting plate 42.On the surface of this reference plate 90, for example form smooth silicon (naked silicon).
The protection baffle plate 91 move in the horizontal direction, can switch recess 42a is set on reference plate 90.Protection baffle plate 91 for example can move with the protection barrier driving portion 92 with cylinder.So open protection baffle plate 91 when using reference plate 90, reference plate 90 is opened with respect to measuring cell S.This is external when not using reference plate 90, and protection baffle plate 91 is closed, and reference plate 90 is covered with protection baffle plate 91.Time of being exposed in the gaseous environment in the measuring cell S of reference plate 90 shortens like this, can control and treatment gas to the corrosion and the pollution of reference plate 90.Its result can carry out the correction of appropriate optical system 45.
Said reference sheet 90 also can be arranged on the part beyond the mounting plate 42, for example can be arranged on the bottom surface etc. of measuring cell S, at this moment, by corrosion and the pollution that protection baffle plate 91 can suppress reference plate 90 is set.
For example as shown in Figure 8, also can be provided on the penetrating window of in above execution mode, putting down in writing 46 protecting baffle plate 100 at using from the penetrating window of the processing Buchholz protection penetrating window 46 in the measuring cell S.For example side can be arranged on the tabular penetrating window protection baffle plate 100 that horizontal direction is free to slide below penetrating window 46.Protection baffle plate 100 for example can slide with the barrier driving portion 101 of cylinder etc.And when measuring with optical system 45, with barrier driving portion 101 penetrating window is opened with protection baffle plate 100, relative determination chamber S opens penetrating window 46.The mensuration one of optical system 45 is finished, and penetrating window is just closed with protection baffle plate 100, covers penetrating window 46 by penetrating window with protection baffle plate 100.At this moment, because at from the processing Buchholz protection penetrating window 45 that flows in the measuring cell S, so can keep mensuration precision with optical system 45.
As shown in Figure 9, on the carrying port 33 of the measuring cell S that in above execution mode, puts down in writing, the cowling panel 110 to the air-flow rectification of the junction of two streams of the interior down current of the carrying room by the air stream that flows out from carrying port 33 in the measuring cell S and carrying port 33 outsides 10 can be set also.Cowling panel 110 for example can form to angle of depression direction from carrying port 33 side ends of the bottom surface of measuring cell S.Utilize this cowling panel 110 the air stream that flows out from carrying port 33 and the interflow of down current, air-flow is not disorderly in this junction of two streams.The down current that its result for example can suppress in the carrying room 10 is not disorderly, for example can not roll the particulate in the carrying room 10, can suppress to carry the pollution of wafer W.
An example of embodiments of the present invention more than has been described, but the present invention is not limited thereto example, can adopt the mode of various variations.For example the determinator 4 of record is a thickness of measuring etched film in the present embodiment, also can be other of wafer W are measured, and for example measures the patterning that forms in wafer surface of the thick wafer surface pattern of etching etc.In base plate processing system 1, also a plurality of determinators can be housed.The position of packing into of determinator can be selected arbitrarily in addition.In the present embodiment in Ji Zai the base plate processing system 1, Etaching device 4 is housed, but also can be that use regulate the flow of vital energy other gas treatment equipment of body, for example film formation device, ashing (ashing) device, the substrate surface lapping device that uses the soda acid medicine and developing device etc. are housed.The structure of the Handling device 6 in the base plate processing system 1, box mounting portion 2 etc. is not limited to present embodiment yet in addition.In addition except semiconductor wafer, the present invention also goes for other base plate processing systems of glass substrate that FPD (flat-panel monitor) uses with substrate, photomask etc.
Utilizability on the industry
The present invention can in the base plate processing system with gas treatment equipment and determinator Process pollution in the determinator that gas brings with establishment.
Claims (15)
1. a base plate processing system is characterized in that, has incorporate following apparatus:
Use and handle the gas treatment equipment that gas is handled substrate;
To the determinator of measuring with the substrate of described gas treatment equipment processing; With
To arrive the Handling device of described determinator with the board carrying that described gas treatment equipment is handled,
Described determinator has the mounting portion of mounting substrate; The substrate irradiates light of mounting in this mounting portion, the optical detecting portion that substrate is measured; With hold described mounting portion, the measuring cell that the substrate in the described mounting portion is measured,
On described measuring cell, be formed with the board carrying mouth that utilizes described Handling device that board carrying is used to described mounting portion,
The wall blocking that space in the described optical detecting portion and the ventilation between the described measuring cell are configured this measuring cell,
With the side wall surface of the described measuring cell of described board carrying mouth subtend position on, be formed with the air supply opening that clean air is provided to described measuring cell, described air supply opening forms towards described board carrying mouth.
2. base plate processing system as claimed in claim 1 is characterized in that, exposes on the face the corrosion-resistant processing of implementing at described processing gas in described measuring cell.
3. as each described base plate processing system in claim 1 or 2, it is characterized in that described measuring cell forms in the mode of only holding described mounting portion.
4. base plate processing system as claimed in claim 1 is characterized in that, described measuring cell as a side, forms rectangular shape with described board carrying mouth.
5. base plate processing system as claimed in claim 1 is characterized in that, described determinator also has framework and is arranged on the mensuration zone that is used to form described measuring cell in this framework,
The described profile of measuring the zone is a rectangular shape, and described measuring cell forms concavity on the side wall surface of measuring the zone.
6. base plate processing system as claimed in claim 5 is characterized in that, described optical detecting portion is set in the described mensuration zone, promptly is arranged on the internal face that constitutes described measuring cell and constitutes in the hollow bulb between the outside wall surface of the regional profile of described mensuration.
7. base plate processing system as claimed in claim 1 is characterized in that, will and described optical detecting portion between on the wall of the described measuring cell that blocks, be formed with the portion that sees through that sees through from the light of described optical detecting portion irradiation.
8. base plate processing system as claimed in claim 7 is characterized in that, the described portion that sees through is provided with at described processing gas, and protection sees through the portion that the sees through protection baffle plate of portion.
9. base plate processing system as claimed in claim 1 is characterized in that, at described measuring cell, is formed with exhaust outlet near described board carrying mouth, and the clean air that described exhaust outlet will provide from described air supply opening is discharged from the downstream of described mounting portion.
10. base plate processing system as claimed in claim 9 is characterized in that, described exhaust outlet forms in the bottom surface of described measuring cell.
11., it is characterized in that also having as claim 9 or 10 described base plate processing systems:
Open and close the baffle plate of described board carrying mouth; With
When opening described baffle plate, carry out air feed from described air supply opening, stop exhaust from described exhaust outlet, when closing described baffle plate, carry out from the air feed of described air supply opening with from the control device of the exhaust of described exhaust outlet.
12. base plate processing system as claimed in claim 1 is characterized in that, also has:
Import the air introducing port of air from the outside of described determinator;
Be communicated to the supply air line of described air supply opening from described air introducing port; With
From remove the filter of impurity by the air in the described supply air line.
13. base plate processing system as claimed in claim 1 is characterized in that,
The outside at described board carrying mouth forms down current,
To be set at flow from the gas supply flow of described air supply opening less than described down current.
14. base plate processing system as claimed in claim 1 is characterized in that,
The outside at the carrying port of described substrate forms down current,
Described board carrying mouth is provided with the cowling panel that the air-flow to the interflow portion of the air-flow of the described clean air in the described measuring cell and described down current carries out rectification.
15. base plate processing system as claimed in claim 1 is characterized in that,
For proofreading and correct mensuration based on described optical detecting portion, in described measuring cell, be provided with by light-struck reference component from described optical detecting portion,
Described reference component is provided with at described processing gas, the protection baffle plate of protecting group quasi-component.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004318100 | 2004-11-01 | ||
| JP2004318100A JP2006128559A (en) | 2004-11-01 | 2004-11-01 | Substrate processing system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1779905A CN1779905A (en) | 2006-05-31 |
| CN100405536C true CN100405536C (en) | 2008-07-23 |
Family
ID=36722894
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005101173155A Expired - Fee Related CN100405536C (en) | 2004-11-01 | 2005-11-01 | Substrate processing system |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2006128559A (en) |
| KR (1) | KR100686762B1 (en) |
| CN (1) | CN100405536C (en) |
| TW (1) | TW200629350A (en) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4584864B2 (en) | 2005-05-27 | 2010-11-24 | 株式会社リコー | Belt drive device, image forming apparatus, belt drive method, and program |
| JP4961893B2 (en) * | 2006-08-23 | 2012-06-27 | 東京エレクトロン株式会社 | Substrate transport apparatus and substrate transport method |
| JP4359640B2 (en) * | 2007-09-25 | 2009-11-04 | 東京エレクトロン株式会社 | Substrate transfer apparatus and downflow control method |
| JP5316180B2 (en) * | 2009-04-08 | 2013-10-16 | 株式会社安川電機 | Pre-aligner device, transport device including the same, and semiconductor manufacturing device |
| JP5552559B2 (en) * | 2013-07-04 | 2014-07-16 | 東京エレクトロン株式会社 | Peeling system, peeling method, program, and computer storage medium |
| US10082461B2 (en) | 2014-07-29 | 2018-09-25 | Nanometrics Incorporated | Optical metrology with purged reference chip |
| JP5923197B2 (en) * | 2015-04-17 | 2016-05-24 | 株式会社日立国際電気 | Substrate processing apparatus and semiconductor device manufacturing method |
| US10410832B2 (en) * | 2016-08-19 | 2019-09-10 | Lam Research Corporation | Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment |
| JP6700605B2 (en) * | 2016-11-16 | 2020-05-27 | 日本電気硝子株式会社 | Glass substrate manufacturing method |
| TWI712865B (en) * | 2017-09-21 | 2020-12-11 | 日商斯庫林集團股份有限公司 | Exposure device, substrate processing apparatus, exposure method and substrate processing method |
| CN110366774B (en) * | 2018-01-12 | 2023-06-02 | 株式会社爱发科 | Vacuum device |
| KR101906770B1 (en) | 2018-04-30 | 2018-10-10 | 윤우걸 | Polishing device for wafer |
| KR20190137449A (en) * | 2018-06-01 | 2019-12-11 | 주식회사 디엠에스 | Apparatus for substrate process |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5462603A (en) * | 1993-06-24 | 1995-10-31 | Tokyo Electron Limited | Semiconductor processing apparatus |
| JPH10321690A (en) * | 1997-05-23 | 1998-12-04 | Mitsubishi Electric Corp | Wafer inspecting equipment |
| JPH11220004A (en) * | 1997-11-26 | 1999-08-10 | Dainippon Screen Mfg Co Ltd | Wafer processing system |
| JP2000009434A (en) * | 1998-06-24 | 2000-01-14 | Matsushita Electric Ind Co Ltd | Method for measuring with optical linear sensor |
| JP2000195779A (en) * | 1998-12-28 | 2000-07-14 | Nikon Corp | Aligner and manufacture of micro devices |
| JP2000256094A (en) * | 1999-03-08 | 2000-09-19 | Speedfam-Ipec Co Ltd | Production of wafer by epitaxial growth of silica and device therefor |
| JP2003100838A (en) * | 2001-09-25 | 2003-04-04 | Sony Corp | System and method for treating substrate |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0751478B2 (en) * | 1989-11-24 | 1995-06-05 | 新技術事業団 | Epitaxial growth method of compound crystal |
| JPH03250642A (en) * | 1989-12-06 | 1991-11-08 | Hitachi Ltd | Infrared ray thermometer |
| JPH06340304A (en) * | 1993-06-01 | 1994-12-13 | Tokyo Electron Ltd | Storage rack, conveying method, and washing device for box body |
| JP2817605B2 (en) * | 1993-12-22 | 1998-10-30 | 村田機械株式会社 | Automatic warehouse for clean room |
| JP3453223B2 (en) * | 1994-08-19 | 2003-10-06 | 東京エレクトロン株式会社 | Processing equipment |
| JPH11238787A (en) * | 1998-02-23 | 1999-08-31 | Nec Kansai Ltd | Wafer stocker |
| JP4018829B2 (en) * | 1998-05-07 | 2007-12-05 | 松下電器産業株式会社 | Manufacturing method of semiconductor device |
| JP2000021797A (en) * | 1998-07-01 | 2000-01-21 | Tokyo Electron Ltd | Single-wafer processing type heat treating apparatus |
| JP2000036532A (en) * | 1998-07-17 | 2000-02-02 | Nikon Corp | Semiconductor manufacturing and inspecting apparatus |
| JP3662154B2 (en) * | 1999-12-13 | 2005-06-22 | 東京エレクトロン株式会社 | Substrate processing system |
| JP3679690B2 (en) * | 2000-07-12 | 2005-08-03 | 東京エレクトロン株式会社 | Substrate processing equipment |
| JP3783075B2 (en) * | 2001-12-13 | 2006-06-07 | 東京エレクトロン株式会社 | Probe device and loader device |
-
2004
- 2004-11-01 JP JP2004318100A patent/JP2006128559A/en active Pending
-
2005
- 2005-10-13 TW TW094135721A patent/TW200629350A/en unknown
- 2005-10-31 KR KR1020050102709A patent/KR100686762B1/en not_active IP Right Cessation
- 2005-11-01 CN CNB2005101173155A patent/CN100405536C/en not_active Expired - Fee Related
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5462603A (en) * | 1993-06-24 | 1995-10-31 | Tokyo Electron Limited | Semiconductor processing apparatus |
| JPH10321690A (en) * | 1997-05-23 | 1998-12-04 | Mitsubishi Electric Corp | Wafer inspecting equipment |
| JPH11220004A (en) * | 1997-11-26 | 1999-08-10 | Dainippon Screen Mfg Co Ltd | Wafer processing system |
| JP2000009434A (en) * | 1998-06-24 | 2000-01-14 | Matsushita Electric Ind Co Ltd | Method for measuring with optical linear sensor |
| JP2000195779A (en) * | 1998-12-28 | 2000-07-14 | Nikon Corp | Aligner and manufacture of micro devices |
| JP2000256094A (en) * | 1999-03-08 | 2000-09-19 | Speedfam-Ipec Co Ltd | Production of wafer by epitaxial growth of silica and device therefor |
| JP2003100838A (en) * | 2001-09-25 | 2003-04-04 | Sony Corp | System and method for treating substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1779905A (en) | 2006-05-31 |
| JP2006128559A (en) | 2006-05-18 |
| KR20060052345A (en) | 2006-05-19 |
| KR100686762B1 (en) | 2007-02-26 |
| TW200629350A (en) | 2006-08-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100405536C (en) | Substrate processing system | |
| CN101072620B (en) | System and method for removing contaminants | |
| JP3839555B2 (en) | Locally sealed cleaning device | |
| US6535270B1 (en) | Exposure apparatus and air-conditioning apparatus for use with exposure apparatus | |
| JP3511514B2 (en) | Substrate purification processing apparatus, dispenser, substrate holding mechanism, substrate purification processing chamber, and substrate purification method using these | |
| JP4344593B2 (en) | Mini-environment device, thin plate manufacturing system, and atmosphere replacement method for clean container | |
| KR101271181B1 (en) | Apparatus for measuring contamination degree of conveying enclosure and measuring method for using the same | |
| US8353986B2 (en) | Substrate processing apparatus | |
| CN110816072B (en) | Low particle gas enclosure system and method | |
| KR20020073601A (en) | Air management system and method for chemical containment and contamination reduction in a semiconductor manufacturing facility | |
| JP2007130730A (en) | Cutting device | |
| JPWO2002101804A1 (en) | Exposure apparatus, device manufacturing method, and temperature stabilized flow path apparatus | |
| JP5449720B2 (en) | Substrate processing equipment | |
| JP2010087079A (en) | Surface processing apparatus | |
| TW201907042A (en) | Environmental control coating system | |
| KR100571864B1 (en) | Substrate processing apparatus | |
| KR101483224B1 (en) | Apparatus for detecting particles in porous parts | |
| CN212963399U (en) | Detection equipment and detection system | |
| US20110122379A1 (en) | Filter holding apparatus, exposure apparatus, and method for producing device | |
| TW201300967A (en) | Filter box, filter device, and exposure device | |
| JP2009087992A (en) | Plasma processing apparatus | |
| WO2002053267A1 (en) | Fan filter unit and method of manufacturing the unit, exposure device, and method of manufacturing device | |
| JP3469803B2 (en) | Coating and developing apparatus operating method and coating and developing apparatus | |
| CN112466771B (en) | Semiconductor device with a plurality of semiconductor chips | |
| WO2003012836A1 (en) | Semiconductor manufacturing system, semiconductor manufacturing apparatus, semiconductor manufacturing method, and semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080723 Termination date: 20131101 |