CN100388418C - Components for substrate processing apparatus and manufacturing method thereof - Google Patents
Components for substrate processing apparatus and manufacturing method thereof Download PDFInfo
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- CN100388418C CN100388418C CNB2005101177866A CN200510117786A CN100388418C CN 100388418 C CN100388418 C CN 100388418C CN B2005101177866 A CNB2005101177866 A CN B2005101177866A CN 200510117786 A CN200510117786 A CN 200510117786A CN 100388418 C CN100388418 C CN 100388418C
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
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- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/0054—Plasma-treatment, e.g. with gas-discharge plasma
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- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
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- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
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Abstract
A focus ring is shaped by cutting off a silicon carbide body formed by a sintering method or a CVD method. The shaped focus ring is exposed to a plasma generated from at least one of a carbon tetra fluoride gas and an oxygen gas for producing impurities, and the impurities are introduced to void-like defects existing in the vicinity of a surface of the focus ring. Subsequently, positrons are injected in the vicinity of the surface of the focus ring into which the impurities are introduced, and the defect density in the vicinity of the surface of the focus ring is detected by the positron annihilation method.
Description
Technical field
The present invention relates to components for substrate processing apparatus and manufacture method thereof, particularly consuming components for substrate processing apparatus and the manufacture method of using under the environment thereof.
Background technology
Usually, to the reception room implementing the substrate board treatment of etch processes as the semiconductor wafer of substrate (below, be called " wafer "), have to accommodate wafer (below, be called " chamber ").In this substrate board treatment, in chamber, apply High frequency power, by CF
4Class gas etc. are handled gas and are generated plasma, utilize the plasma of this generation that wafer surface is implemented etch processes.
Be used for the multiple parts that state with plasma maintains expectation state and be configured in the chamber, as one of such parts, known have a focusing ring.Focusing ring is circular parts, is configured to surround the periphery of discoidal wafer in chamber.In order effectively the plasma in the chamber to be guided to wafer, focusing ring must have the electrical characteristics identical with wafer, for example conductivity.Therefore, existing focusing ring is made by silicon (Si).
But because silicon is corroded by plasma, in chamber, focusing ring consumes distortion at short notice.Because can change if focusing ring is out of shape the state of the plasma on the wafer then, so, under the situation of using the focusing ring of making by silicon, must change focusing ring at short notice.
Therefore, in recent years, the focusing ring that the material carborundum (SiC) that use is difficult to be corroded by plasma by known conduct is made.Because it is carborundum has with much at one conductivity of wafer, metallic pollution can not take place in plasma atmosphere, therefore, suitable as the parts in the chamber.
As carborundum, known have sintered silicon carbon that is formed by sintering process and the CVD carborundum that is formed by the CVD method, and they are separately because of the consumption of plasma generation, and with respect to the consumption of silicon because of plasma generation, the former reduces about 15%, and the latter reduces about 50%.
But, because known sintered silicon carbon easily produces particulate, so, there is the surface use of the focusing ring that suggestion will form by sintered silicon carbon to be difficult to produce the CVD carborundum overlay film (for example, with reference to patent documentation 1) of particulate.Thus, can suppress the particulate that produces by focusing ring.
Patent documentation 1: the spy opens flat 10-135093 communique
Summary of the invention
But CVD carborundum can form the thick film of carborundum by transfer material gas around the graphite substrate in being configured in high-temperature atmosphere on the surface of this graphite substrate, cuts away this thick film of formation and obtains.In addition, because the rough surface of the CVD carborundum after cutting away, so, in order to prevent to disperse with the particulate that the surface slynessization produces, focusing ring is implemented attrition process because of improving outward appearance.Therefore, the focusing ring of CVD carborundum has the problem of the difficulty made.
In addition, though CVD carborundum is difficult to produce particulate, still can produce some particulates, particularly, the etch processes at the initial stage after focusing ring is changed specifically, when the application time of High frequency power reaches 120 hours, can produce a large amount of particulates.Therefore, when using CVD carborundum focusing ring, after focusing ring is changed,, need carry out weather (seasoning) for a long time and handle, also have the problem of the running rate decline of substrate board treatment in order to make the environmental gas in the chamber stable.
The object of the present invention is to provide the generation that suppresses particulate, can prevent that the running rate of substrate board treatment from descending simultaneously, and the components for substrate processing apparatus that can make easily and manufacture method thereof.
In order to achieve the above object, a first aspect of the present invention is described to be the manufacture method that is configured in the components for substrate processing apparatus in the reception room of the substrate board treatment of accommodating substrate, it is characterized in that, comprise: the defective existence makes the aforesaid substrate processing unit reduce with the existence ratio of the emptying aperture shape defective of the near surface existence of parts than reducing step.
The manufacture method of the described components for substrate processing apparatus of a second aspect of the present invention, it is characterized in that: in the manufacture method of the described components for substrate processing apparatus of a first aspect of the present invention, described defective exists ratio reduction step that foreign body is imported described defective.
The manufacture method of the described components for substrate processing apparatus of a third aspect of the present invention, it is characterized in that: in the manufacture method of the described components for substrate processing apparatus of a second aspect of the present invention, described foreign body is formed by the plasma that at least a gas in fluoro-gas, carbonaceous gas and the oxygen-containing gas generates.
The manufacture method of the described components for substrate processing apparatus of a fourth aspect of the present invention, it is characterized in that: in the manufacture method of the described components for substrate processing apparatus of a first aspect of the present invention, described defective exists than reducing step heat-treats described components for substrate processing apparatus.
The manufacture method of the described components for substrate processing apparatus of a fifth aspect of the present invention, it is characterized in that: in the manufacture method of the described components for substrate processing apparatus of a fourth aspect of the present invention, described defective exists ratio reduction step in inert gas atmosphere the temperature of described components for substrate processing apparatus to be set at 1200 ℃～1600 ℃.
The manufacture method of the described components for substrate processing apparatus of a sixth aspect of the present invention, it is characterized in that: in the manufacture method of the described components for substrate processing apparatus of either side, it is characterized in that in aspect of the present invention first～the 5th: have the inspection step of checking the near surface of described components for substrate processing apparatus by the positron annihilation method.
In order to achieve the above object, a seventh aspect of the present invention is described to be the interior components for substrate processing apparatus of reception room that is configured in the substrate board treatment of accommodating substrate, it is characterized in that: the existence ratio of the emptying aperture shape defective that near surface exists, than the existence of the emptying aperture shape defective of the near surface existence of the carborundum that forms by the CVD method than low.
The manufacture method of described components for substrate processing apparatus according to a first aspect of the invention, the existence of the emptying aperture shape defective that the near surface of components for substrate processing apparatus exists is than reducing.If the existence of emptying aperture shape defective is than reducing, then the generation rate of the particulate in the etching treatment procedure at initial stage will descend.Therefore, can suppress particulate by the components for substrate processing apparatus generation, simultaneously, owing to do not need long weather to handle, so, can prevent that the running rate of substrate board treatment from descending.In addition, need be not the attrition process of purpose to prevent that particulate from dispersing, and, even using under the situation that is relatively easy to the carborundum that sintering process forms by manufacturing, because can reduce the particulate generation rate in the etch processes at initial stage, therefore, can easily make components for substrate processing apparatus.
The manufacture method of described components for substrate processing apparatus according to a second aspect of the invention, because the emptying aperture shape defective that exists to the near surface of components for substrate processing apparatus imports foreign body, therefore, the existence that can make this defective really is than reducing.
The manufacture method of described components for substrate processing apparatus according to a third aspect of the invention we, foreign body is formed by the plasma that at least a gas in fluoro-gas, carbonaceous gas and the oxygen-containing gas generates, therefore, the defective that can easily exist near surface imports.And these plasmas also produce in etching treatment procedure, so, in etching treatment procedure, can continue to import the foreign body that forms by these plasmas to defective.Therefore, can continue to reduce the existence ratio of defective.
The manufacture method of described components for substrate processing apparatus because the emptying aperture shape defective that components for substrate processing apparatus by heat treatment, makes near surface exist disappears, can reduce the existence ratio of defective really according to a forth aspect of the invention.
The manufacture method of described components for substrate processing apparatus according to a fifth aspect of the invention, because the temperature of components for substrate processing apparatus is set to 1200 ℃～1600 ℃ in inert gas atmosphere, therefore, heat treatment can be promoted, the evaporation of the constituent material of components for substrate processing apparatus can be suppressed simultaneously.
The manufacture method of described components for substrate processing apparatus according to a sixth aspect of the invention, the near surface of components for substrate processing apparatus is checked by the positron annihilation method.The positron annihilation method can easily be checked out the existence ratio of the emptying aperture shape defective that the near surface of components for substrate processing apparatus exists.Therefore, can judge easily that components for substrate processing apparatus has or not the generation particulate, and then can easily make components for substrate processing apparatus.
The existence ratio of the emptying aperture shape defective that described according to a seventh aspect of the invention components for substrate processing apparatus, near surface exist, than the existence of the emptying aperture shape defective of the near surface existence of the carborundum that forms by the CVD method than low.If the existence ratio of emptying aperture shape defective, than low, then the particulate generation rate in the etching treatment procedure at initial stage reduces than the existence of the emptying aperture shape defective of the carborundum that is formed by the CVD method.Therefore, can suppress particulate, simultaneously,, therefore, can prevent that the running rate of substrate board treatment from reducing owing to do not need long weather to handle by the components for substrate processing apparatus generation.In addition, need be not the attrition process of purpose to prevent that particulate from dispersing, and, even using under the situation that is relatively easy to the carborundum that sintering process forms by manufacturing, therefore particulate generation rate in the time of also can reducing the etch processes at initial stage, can easily make components for substrate processing apparatus.
Description of drawings
Fig. 1 is the sectional view of expression use as the general structure of the substrate board treatment of the focusing ring of the components for substrate processing apparatus of first execution mode of the present invention.
Fig. 2 is the figure that is illustrated in the mechanism that particulate produces in the etch processes at initial stage.
Fig. 3 is the flow chart of handling as the parts manufacturing of the manufacture method of the components for substrate processing apparatus of present embodiment.
Fig. 4 is the figure of the foreign body importing process of step S32 in the presentation graphs 3.
Fig. 5 is the image that the foreign body of step S32 in the presentation graphs 3 imports the result.
Fig. 6 is the image of the manufacture method and the relation between the defective existence ratio of expression carborundum.
Fig. 7 is the flow chart of handling as the parts manufacturing of the manufacture method of the components for substrate processing apparatus of second execution mode of the present invention.
Fig. 8 is the image of the heat treated result of step S72 in the presentation graphs 7.
Symbol description:
The W semiconductor wafer
1 etch processes device
2 chambers
3 lower electrodes
4 insulating material
5 supporters
6 shower nozzles
Chamber on 7
8 times chambers
9 dipole annular magnets (dipole ring magnet)
10 gate valves
11 high frequency electric sources
12 adaptations
13 electrostatic chucks
14 battery lead plates
15 DC power supply
16 focusing rings
17 spoilers
18 gas extraction system
19 ball-screws
20 bellowss
21 bellows protecting covers (bellows cover)
22 push pin (pusher pin)
23 cryogen chamber
24 pipe arrangements
25 heat-conducting gas supply pipelines
26 heat-conducting gas supply units
27 surge chambers
28 handle gas introduction tube
29?MFC
Embodiment
Below, with reference to the description of drawings embodiments of the present invention.
The components for substrate processing apparatus and the manufacture method thereof of first execution mode of the present invention at first, are described.
Fig. 1 is the sectional view of expression use as the general structure of the substrate board treatment of the focusing ring of the components for substrate processing apparatus of first execution mode of the present invention.
Among Fig. 1, the etch processes device 1 that constitutes substrate board treatment has: aluminum cylinder type chamber 2 for example; For example be configured in this chamber 2, support the supporter 5 of free lifting of lower electrode 3 that the mounting diameters are the semiconductor wafer W of 200mm across insulating material 4; And relatively be configured in top in the chamber 2 as the shower nozzle 6 of upper electrode with lower electrode 3.
High frequency electric source 11 is connected with lower electrode 3 by adaptation 12, and high frequency electric source 11 imposes on lower electrode 3 with the High frequency power of regulation.Thus, lower electrode 3 plays a role as lower electrode.
On lower electrode 3, dispose the electrostatic chuck (ESC) 13 that is used for Electrostatic Absorption power absorption semiconductor wafer W.The discoidal battery lead plate 14 that is made of conducting film is configured in the inside of this electrostatic chuck 13, and DC power supply 15 is electrically connected with this battery lead plate 14.The Coulomb force that semiconductor wafer W produces by the direct voltage that is imposed on battery lead plate 14 by DC power supply 15 etc. be adsorbed remain on electrostatic chuck 13 above.
Around electrostatic chuck 13, dispose circular focusing ring 16.Therefore, focusing ring 16 will be attracted to the periphery encirclement of the semiconductor wafer W on the electrostatic chuck 13.In addition, focusing ring 16 is because made by carborundum, so have and semiconductor wafer W conductivity much at one.Thus, focusing ring 16 can guide the aftermentioned plasma that produces to semiconductor wafer W effectively in chamber 2.Here, focusing ring 16 is by the manufacture method manufacturing of the components for substrate processing apparatus of present embodiment described later, the existence of the defective of the emptying aperture shape that near surface exists than (below, be called " defective exist than "), be configured to defective existence that the near surface than the carborundum that is formed by the CVD method exists than low.
Between the sidewall and lower electrode 3 of last chamber 7, formation is discharged exhaust channel from the gas of the top of lower electrode 3 to the outside of chamber 2, disposes the spoiler 17 of ring-type at this exhaust channel midway.Space (inner space of following chamber 8) below the spoiler 17 of exhaust channel is communicated with gas extraction system 18, and this gas extraction system is not only carried out the pressure control in the chamber 2, and will be decompressed to almost vacuum state in the chamber 2.
Below lower electrode 3, dispose the lower electrode elevating mechanism that constitutes by the ball-screw 19 that extends setting from the bottom of this supporter 5 downwards.This lower electrode elevating mechanism supports lower electrodes 3 by supporter 5, makes ball-screw 19 rotations by not shown motor etc., makes lower electrode 3 liftings as GAP thus.This lower electrode elevating mechanism cuts off with environmental gas in the chamber 2 by the bellows protecting cover 21 that is configured in the bellows 20 around it and be configured in around this bellows 20.
In addition, on lower electrode 3, dispose a plurality of propelling movement pins 22 of freely giving prominence to from the upper surface of this electrostatic chuck 13.These propelling movement pins 22 above-below direction in the drawings move.
In this etch processes device 1, when output input semiconductor wafer W, lower electrode 3 drops to the output input position of semiconductor wafer W, simultaneously, it is outstanding from the upper surface of electrostatic chuck 13 to push pin 22, makes semiconductor wafer W leave lower electrode 3, and it is promoted upward.In addition, when the etch processes semiconductor wafer W, lower electrode 3 rises to the processing position of semiconductor wafer W, simultaneously, pushes in the pin 22 income lower electrodes 3, and electrostatic chuck 13 absorption keep semiconductor wafer W.
In addition, in the inside of lower electrode 3, be provided with the cryogen chamber 23 of the ring-type of for example extending in a circumferential direction.By the cold-producing medium of pipe arrangement 24 to these cryogen chamber 23 circulation-supplied set points of temperature, for example cooling water is controlled the treatment temperature that is positioned in the semiconductor wafer W on the lower electrode 3 by the temperature of this cold-producing medium from cooling device (not shown).
On electrostatic chuck 13, dispose a plurality of heat-conducting gas supply holes and heat-conducting gas and supply with groove (not shown).These heat-conducting gas supply holes etc. are connected with heat-conducting gas supply unit 26 by the heat-conducting gas supply pipeline 25 that is configured in lower electrode 3 inside, heat-conducting gas, for example He gas are supplied with in the gap of this heat-conducting gas supply unit 26 between electrostatic chuck 13 and semiconductor wafer W.This heat-conducting gas supply unit 26 constitutes and the gap between electrostatic chuck 13 and the semiconductor wafer W can be evacuated.
Be configured in shower nozzle 6 ground connection (ground wire) at the top of chamber 2, shower nozzle 6 plays grounding electrode.In addition, surge chamber 27 is set on shower nozzle 6, this surge chamber 27 be connected from the processing gas introduction tube 28 of handling gas supply part (not shown).Dispose MFC (Mass Flow Controller: mass flow controller) 29 midway at this processing gas introduction tube 28.This MFC29 for example handles gas or N by surge chamber 27 and shower nozzle 6 with the gas of regulation
2Gas supplies in the chamber 2, simultaneously, controls the flow of this gas, cooperates with above-mentioned gas extraction system 18, the pressure of chamber 2 is controlled at the value of expectation.
In the chamber 2 of this etch processes device 1, as mentioned above, lower electrode 3 is applied High frequency power, by this High frequency power that applies, between lower electrode 3 and shower nozzle 6, produce highdensity plasma by handling gas, generate ion etc.
In etch processes device 1, when carrying out etch processes, at first make gate valve 10 be in open mode, will be input in the chamber 2 as the semiconductor wafer W of processing object.Then, will handle gas (for example, by the carbon tetrafluoride gas (CF that stipulates flow proportional from shower nozzle 6
4) and oxygen (O
2) in the mist of at least a formation) import in the chamber 2 with the flow and the flow-rate ratio of regulation, make the pressure in the chamber 2 reach setting by gas extraction system 18 grades.Next, apply High frequency power to lower electrode 3, apply direct voltage to battery lead plate 14, semiconductor wafer W is adsorbed on the lower electrode 3 by DC power supply 15 by high frequency electric source 11.Then, make the processing gas plasma as described above that spues from shower nozzle 6.This plasma accumulates in the surface of semiconductor wafer W by focusing ring 16, the ion that generates by this plasma for example fluorine ion and oxonium ion etc. with the surface physics etching of semiconductor wafer W.
As mentioned above, when forming focusing ring 16 by carborundum, as carborundum can use the carborundum that forms by sintering process (below, be called " sintered silicon carbon ") and the carborundum that forms by the CVD method (below, be called " CVD carborundum ") in any, still, well-known all the time, using sintered silicon carbon and using under arbitrary situation of CVD carborundum, in the etch processes in the early stage, focusing ring 16 all can produce particulate.
About producing the mechanism of particulate in the etch processes in the early stage, be difficult to clearly state, therefore, the inventor is in order to analogize the hypothesis of this mechanism, the focusing ring that making is made of carborundum, this focusing ring is configured in the chamber in the etch processes device,, observes with respect to the quantity of the particulate (silicon-carbide particles) that produces by focusing ring of disposing time and with respect to the consumption of the focusing ring of disposing time.
Its result, the inventor confirms: when the application time of High frequency power is 15 minutes, produce a large amount of particulates in the chamber 2, about 1/3 is the particulate that is produced by focusing ring in the particulate, and focusing ring does not almost consume.In addition, the inventor confirms: when the application time of High frequency power was 80 hours, the particulate in the chamber reduced, and about 1/10 is the particulate that is produced by focusing ring in the particulate, and focusing ring consumes.
That is, the inventor confirms: be accompanied by the consumption of focusing ring, the particle number that is produced by focusing ring reduces.Thus, about producing the mechanism of particulate in the etching treatment procedure in the early stage, inventor's class is released following hypothesis as shown in Figure 2.
The defective of the emptying aperture shape that nearby exists carbon or silicon to come off in a large number on the surface of the focusing ring of being made by carborundum to form (among the figure with " zero " expression), it exists ratio high more the closer to the surface.Therefore, can think at the surface of focusing ring formation brittle layer (Fig. 2 (A)).
In the etching treatment procedure in the early stage, shown in arrow among the figure, if this brittle layers of collision such as ions, then the kinetic energy of ion passes to brittle layer, and the carborundum molecule in the brittle layer disperses, and the carborundum molecule that this disperses becomes particulate (Fig. 2 (B)).
If semiconductor wafer W is implemented long etch processes, so, also be exposed to for a long time in the plasma owing to be configured to surround the focusing ring of the periphery of this semiconductor wafer W, brittle layer consumption, the dense layer (hereinafter referred to as " compacted zone ") below the brittle layer exposes.Shown in arrow among the figure, even this compacted zone of collision such as ion, because the molecular separating force of carborundum is big in the compacted zone, therefore, the carborundum molecule in the brittle layer can not disperse, and its result also produces particulate (Fig. 2 (C)) hardly.
That is to say, defective exist than and the generation of particulate confidential relation is arranged, in the existence of defective when low, the generation minimizing of particulate.
According to this hypothesis, in the manufacture method of the components for substrate processing apparatus of first execution mode of the present invention, can make constitute by carborundum, exist than reducing as the defective of the near surface of the focusing ring of components for substrate processing apparatus.
Fig. 3 is the flow chart of handling as the parts manufacturing of the manufacture method of the components for substrate processing apparatus of first execution mode of the present invention.
In Fig. 3, at first, form the big or small carborundum of expectation by sintering process or CVD method, the carborundum that will form by cut is configured as focusing ring (step S31).
Then, the focusing ring of shaping is exposed to generate in the plasma that at least a gas by in carbon tetrafluoride gas and the oxygen of foreign body generates, will for example fluorine ion and oxonium ion etc. import to the defective (defective exists than reducing step) (step S32) of the emptying aperture shape that the near surface of focusing ring exists by the foreign body of plasma generation.
In step S32, at first, shown in the arrow that has been coated with shade among the figure,, inject by infiltration (dope) or ion the fluorine ion of plasma and oxonium ion etc. are imported to defective (Fig. 4 (A)) as foreign body to the focusing ring surface irradiation plasma that is shaped.Import the fluorine ion of this defective and oxonium ion etc. and can improve carborundum electric adhesion (molecular separating force) each other towards defective.And, be imported into the fluorine ion of defective and oxonium ion etc. and rest on (in the drawings to be coated with the circle expression of shade) in the defective, thus, the defective that the near surface of focusing ring exists exists than reducing, the top layer of focusing ring becomes dense layer (below, be called " foreign body introduced layer ") (Fig. 4 (B)).
At this moment, because fluorine ion and oxonium ion etc. only import the defective of the near surface of focusing ring, so, the thin thickness of foreign body introduced layer, the focusing ring that will have this foreign body introduced layer is configured in when carrying out etch processes in the chamber, because etching, the foreign body introduced layer might consume in advance.
But, even in etching treatment procedure, because focusing ring is exposed in the plasma that the processing gas that is made of at least a gas in carbon tetrafluoride gas and the oxygen generates (representing with blank arrow among the figure), for example, even the foreign body introduced layer has consumed, after the foreign body introduced layer consumes, the foreign body in the plasma, for example the continuation of quilt such as fluorine ion and oxonium ion imports and is exposed near the defective on the new surface in the plasma.That is, even near new surface, the existence of defective reduces than also continuing, and forms new foreign body introduced layer (Fig. 4 (C)).
The plasma that uses when the plasma of use was preferably with etch processes when therefore, step S32 foreign body imported is with a kind of.
Fig. 5 is the result's that imports of the foreign body of step S32 in the presentation graphs 3 figure.
In Fig. 5, the longitudinal axis is the density of each atom, and transverse axis is the degree of depth apart from the focusing ring surface.The figure shows and the focusing ring made by sintered silicon carbon is implemented foreign body import, by SIMS (Secondary Ion Mass Spectrometry: method result that the focusing ring of having implemented this foreign body and importing is analyzed secondary ion mass spectroscopy).
As shown in the figure, in the focusing ring in being exposed on plasma, the position apart from about case depth 2 μ m exists fluorine atom and oxygen atom.Therefore, import by foreign body, fluorine ion in the plasma and oxonium ion are directed in the defective that is present in the degree of depth 2 μ m.Thus, in the focusing ring of having implemented the foreign body importing, being formed with thickness is the foreign body introduced layer of about 2 μ m.
Sintered silicon carbon focusing ring and CVD carborundum focusing ring all have the defective of a plurality of emptying aperture shapes near surface, but, because importing, can implement above-mentioned foreign body to any one focusing ring, so, no matter which kind of the manufacture method of carborundum is, there is ratio in the defective that can reduce the near surface of focusing ring.
There is the chart that concerns between the ratio in Fig. 6 for the manufacture method and the defective of expression carborundum.
Among Fig. 6, the longitudinal axis is to exist than corresponding S parameter with defective, and transverse axis is the positron energy corresponding with the degree of depth on distance focusing ring surface.The figure shows the result that there is ratio in the defective of measuring the near surface of the focusing ring of being made by various carborundum by the positron annihilation method.
The positron annihilation method is that the positron of being emitted by sodium radioisotope is injected carborundum, by monitor this positron injected and the electronics in the carborundum for example in the energy that produces of pair annihilation between nuclear electron or the free electron, thereby measure the method that there is ratio in defective.
In the positron annihilation method, under defective existed than low situation, positron was invaded between the lattice of each atom that forms carborundum, increased with the ratio (hereinafter referred to as " annihilation ratio ") of the interior nuclear electron generation pair annihilation of each atom.On the other hand, exist than under the condition with higher in defective, positron is invaded each defective, and the annihilation ratio between the free electron in the defective increases.
Usually, the kinetic energy of interior nuclear electron is bigger than the kinetic energy of free electron, therefore, the energy that produces when positron and kernel annihilation of electron pair, the energy that produces during than positron and free electron pair annihilation is big.So,, can measure defective and have ratio by monitoring pair annihilation energy.For example, under the big situation of the pair annihilation energy of measuring, can think that defective exists than low.
In addition, the S parameter is and free electron etc. has annihilation ratio between the electronics of less kinetic energy, and the S parameter is more little, and the big electronics of kinetic energy promptly and the annihilation ratio between the interior nuclear electron many more.Therefore, in the figure of Fig. 6, the S parameter is more little, and the expression defective exists lower than more.
In addition, the energy of positron of injecting carborundum is big more, and it is dark more that positron is invaded the degree of depth of carborundum.Therefore, in the figure of Fig. 6, the positron energy of transverse axis is big more, and expression is dark more apart from the degree of depth on the surface of carborundum.
In the figure of Fig. 6, " ● " expression sintered silicon carbon, the low-resistance CVD carborundum of " ▲ " expression,
Represent high-resistance CVD carborundum, the sintered silicon carbon that foreign body imports has been implemented in " zero " expression, and the low resistance CVD carborundum that foreign body imports has been implemented in " △ " expression,
The high resistance CVD carborundum that foreign body imports has been implemented in expression.Here, the resistance value of high resistance CVD carborundum for example is 10000 Ω cm, and the resistance value of low resistance CVD carborundum for example is 0.01～0.1 Ω cm.
Shown in the figure of Fig. 6, the energy of not implementing the positron of sintered silicon carbon, low resistance CVD carborundum and high resistance CVD carborundum that foreign body imports is 0, that is, the S parameter on the surface of carborundum is different, the S parameter maximum of sintered silicon carbon, the S parameter minimum of low resistance CVD carborundum.Therefore, under the situation of not implementing the foreign body importing, the defective of sintered silicon carbon exists than the highest, and the defective of low resistance CVD carborundum exists than minimum.
Import if each carborundum is implemented foreign body, no matter which kind of the manufacture method of carborundum is, the S parameter all diminishes.For example, it is littler than the S parameter of the low resistance CVD carborundum of not implementing the foreign body importing to have implemented the S parameter of the sintered silicon carbon that foreign body imports.That is, for example,, import, also can exist than little than the defective of the low resistance CVD carborundum of not implementing the foreign body importing by implementing foreign body even use under the situation of sintered silicon carbon as the material of focusing ring.
Therefore,, import, also can make the generation rate of the particulate in the etch processes at initial stage lower than the generation rate of the low resistance CVD carborundum of not implementing the foreign body importing by implementing foreign body even using under the situation of sintered silicon carbon as the material of focusing ring.
In addition, sintered silicon carbon, low resistance CVD carborundum and high resistance CVD carborundum that foreign body imports have been implemented, represent identical S parameter on the surface of carborundum, therefore, import by implementing foreign body, no matter which kind of the manufacture method of carborundum is, defective can be existed identical more low-level than being reduced to.
Therefore, even using under the situation of sintered silicon carbon as the material of focusing ring, import by implementing foreign body, particulate generation rate in the time of also can be with the etch processes at initial stage is reduced to identical with the generation rate of having implemented the CVD carborundum that foreign body imports low-level.
Get back to Fig. 3, next, inject positron, utilize the positron annihilation method to check that the defective of focusing ring near surface exists than (inspection step) (step S33) at the near surface of the focusing ring that has imported foreign body.Exist when being reduced to the numerical value of regulation in the defective checked out, this focusing ring is configured in the chamber, when not being reduced to the numerical value of regulation, this focusing ring is not configured in the chamber in the defective existence of checking out.
The components for substrate processing apparatus of first embodiment of the invention and manufacture method thereof, because foreign body is directed in the defective of the emptying aperture shape that the surface as the focusing ring of being made by carborundum of components for substrate processing apparatus exists, so the defective of the near surface of focusing ring exists than reducing.Specifically, there is ratio in the defective of the near surface of focusing ring, exists than reducing than the defective of the near surface of not implementing the CVD carborundum that foreign body imports.If the defective of near surface exists than reducing, then the particulate generation rate the during etch processes at initial stage reduces.Therefore, can suppress particulate, simultaneously,, therefore, can prevent that the running rate of etch processes device from reducing owing to do not need long weather to handle by the focusing ring generation.In addition, need be not the attrition process of purpose, and even using manufacturing to be relatively easy under the situation of sintered silicon carbon, therefore the particulate generation rate in the time of also can reducing the etch processes at initial stage, can easily make focusing ring to prevent that particulate from dispersing.
In addition, in above-mentioned present embodiment, even in etching treatment procedure, focusing ring is exposed in the plasma of the processing gas generation that is made of at least a gas in carbon tetrafluoride gas and the oxygen, therefore, fluorine ion in this plasma and oxonium ion are used as in the foreign body importing defective.Therefore, the defective that can easily carry out existing near surface imports foreign body, in addition, even the foreign body introduced layer of focusing ring consumes, after this foreign body introduced layer consumed, fluorine ion in the plasma and oxonium ion etc. were also continued to import near the defective on the new surface that is exposed in the plasma.That is,, the existence of defective is reduced than continuing, and can continue to form new foreign body introduced layer even near new surface.
In addition, in above-mentioned present embodiment, the defective that positron is injected the emptying aperture shape that exists near surface imports the near surface of the focusing ring of foreign body, checks that by the positron annihilation method there is ratio in the defective of the near surface of focusing ring.The positron annihilation method can easily check out that there is ratio in the defective of the near surface of the focusing ring that is made of carborundum.Therefore, can not carry out in kind for a long time the evaluation and have or not particulate to produce, and then can easily make focusing ring from focusing ring with regard to easily judging.
Secondly, components for substrate processing apparatus and the manufacture method thereof to second execution mode of the present invention describes.
The structure of present embodiment, effect and above-mentioned first execution mode are basic identical, in the manufacture method of components for substrate processing apparatus, are not that above-mentioned foreign body imports, and are only using difference on this aspect of heat treatment.Therefore, omit for the structure that repeats, the explanation of effect, below, different structures, effect are described.
As the focusing ring of the components for substrate processing apparatus of present embodiment, with above-mentioned focusing ring 16 similarly, the defective that near surface exists exist than be set to defective than the near surface of CVD carborundum exist compare lower.The focusing ring of present embodiment is made on this aspect in the manufacture method of the components for substrate processing apparatus by present embodiment described later, and is different with focusing ring 16.
Below, the manufacture method of the components for substrate processing apparatus of present embodiment is described.This manufacture method, the hypothesis of the mechanism that produces with particulate in the above-mentioned initial stage etch processes is corresponding, with the manufacture method of the components for substrate processing apparatus of first execution mode similarly, the defective that is made of carborundum, exist as the near surface of the focusing ring of components for substrate processing apparatus is existed than reducing.
Fig. 7 is the flow chart of handling as the parts manufacturing of the manufacture method of the components for substrate processing apparatus of second execution mode of the present invention.In addition, step S31 in the processing of Fig. 7 and S33 are identical with step S31 and S33 in the processing of Fig. 3.
Among Fig. 7, after step S31, in inert gas atmosphere, make the temperature of the focusing ring of shaping rise to 1200 ℃, carry out the heat treatment (annealing) (defective exists than reducing step) (step S72) of focusing ring.
Specifically, in step S72, focusing ring is put in argon gas atmosphere, the temperature of this focusing ring is kept more than 20 minutes at 1200 ℃.At this moment, the molecule of the carborundum of heat fusing etc. flow, thereby make the emptying aperture shape defective of the near surface of focusing ring fill up, disappear.Thus, the defective of the near surface of focusing ring existence exists than reducing.
Fig. 8 is the heat treatment result's of the step S72 in the presentation graphs 7 figure.
Among Fig. 8, the longitudinal axis is represented and defective exists than corresponding S parameter, transverse axis represent with apart from the corresponding positron energy of the degree of depth on focusing ring surface.
The figure shows, utilize the positron annihilation method to measure the result that there is ratio in defective under the heat treated situation down at 1400 ℃ focusing ring.As shown in the figure, the S parameter diminishes when the degree of depth of the surperficial 200nm of distance (0.2 μ m) sharp.That is, the defective of the near surface of focusing ring exists than reducing.This trend does not all have to change in sintered silicon carbon and CVD carborundum.
In addition, if the temperature of focusing ring reaches more than 1400 ℃, carborundum start vaporizer then, if reach more than 1600 ℃, then this evaporation becomes strongly, therefore, in the heat treatment of step S72, the temperature of focusing ring can be set at 1200 ℃～1600 ℃, preferred 1200 ℃～1400 ℃.
Components for substrate processing apparatus second embodiment of the invention and manufacture method thereof, because the focusing ring that is made of carborundum as components for substrate processing apparatus is heat-treated, so, the defective of the emptying aperture shape that near surface exists disappears, and the defective of the near surface of focusing ring exists than reducing.If the defective of near surface exists than reducing, then the generation rate of particulate descends in the etch processes at initial stage.Therefore, can suppress to produce particulate, simultaneously,, therefore, can prevent that the running rate of etch processes device from reducing owing to do not need long weather to handle by focusing ring.And, owing to need be not the attrition process of purpose, therefore, can easily make focusing ring to prevent that particulate from dispersing.
In addition, in the heat treatment of step S72,,, simultaneously, can suppress the evaporation of the carborundum of focusing ring so heat treatment obtains promotion because the temperature of focusing ring is set to 1200 ℃～1600 ℃.
In the above-described embodiment, be illustrated as the situation of the focusing ring of components for substrate processing apparatus applying the present invention to, still, the components for substrate processing apparatus that the present invention can be suitable for is not limited to focusing ring.For example, so long as the components for substrate processing apparatus that uses under consumption environment such as upper electrode or exhaust collector ring, shading ring just can be used the present invention.
In addition, manufacture method of the present invention is not only applicable to components for substrate processing apparatus, also go for components for substrate processing apparatus similarly at the structural member of the conveying device that consumes for example load locking room that uses under the environment etc.
In the above-described embodiment, processed substrate is a semiconductor wafer, and still, processed substrate is not limited thereto, LCD) and FPD (Flat Panel Display: glass substrate such as flat-panel monitor) for example, also can be LCD (Liquid Crystal Display:.
Claims (2)
1. the manufacture method of the components for substrate processing apparatus in the reception room that is configured in the substrate board treatment of accommodating substrate is characterized in that, comprising:
Defective exists than reducing step, and the existence that makes the emptying aperture shape defective that the near surface of described components for substrate processing apparatus exists is than reducing,
Described defective exists ratio reduction step that foreign body is imported described defective,
Described foreign body is formed by the plasma that at least a gas in fluoro-gas, carbonaceous gas and the oxygen-containing gas generates.
2. the manufacture method of components for substrate processing apparatus as claimed in claim 1 is characterized in that:
Has the inspection step of checking the near surface of described components for substrate processing apparatus by the positron annihilation method.
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| JP2004327077 | 2004-11-10 | ||
| JP2004327077A JP2006140238A (en) | 2004-11-10 | 2004-11-10 | Component for substrate treatment device and its manufacturing method |
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| CN100577866C (en) * | 2007-02-27 | 2010-01-06 | 中微半导体设备(上海)有限公司 | Gas sprayer assembly applied in plasma reaction chamber, manufacture method and renewing reutilization method thereof |
| CN101357854B (en) * | 2008-09-12 | 2012-07-25 | 西安交通大学 | Postprocessing method for reducing thermal conductivity of ceramic heat barrier coating |
| CN101748385B (en) * | 2008-12-22 | 2012-05-09 | 深超光电（深圳）有限公司 | Substrate processing device for chemical vapor deposition (CVD) |
| JP5415853B2 (en) * | 2009-07-10 | 2014-02-12 | 東京エレクトロン株式会社 | Surface treatment method |
| JP2012049220A (en) * | 2010-08-25 | 2012-03-08 | Mitsui Eng & Shipbuild Co Ltd | Plasma resistant member and method for recycling the same |
| KR101671671B1 (en) | 2016-05-25 | 2016-11-01 | 주식회사 티씨케이 | Reproducing method of part for semiconductor manufactoring, reproducing apparatus and reproduced part thereof |
| JP6812264B2 (en) * | 2017-02-16 | 2021-01-13 | 東京エレクトロン株式会社 | Vacuum processing equipment and maintenance equipment |
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| KR0170907B1 (en) * | 1995-10-25 | 1999-03-30 | 김주용 | Method of manufacturing zero-defects layer of semiconductor device |
| KR100203129B1 (en) | 1995-12-15 | 1999-06-15 | 김영환 | Process for removal remnant defects in source/drain junction |
| JP4432317B2 (en) * | 2002-12-11 | 2010-03-17 | 信越半導体株式会社 | Heat treatment method for silicon wafer |
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- 2004-11-10 JP JP2004327077A patent/JP2006140238A/en active Pending
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- 2005-11-04 KR KR1020050105199A patent/KR100735936B1/en active IP Right Grant
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| JPH07211700A (en) * | 1994-01-24 | 1995-08-11 | Sumitomo Metal Ind Ltd | Electrode for plasma generation system and production thereof |
| US6815352B1 (en) * | 1999-11-09 | 2004-11-09 | Shin-Etsu Chemical Co., Ltd. | Silicon focus ring and method for producing the same |
| CN1440563A (en) * | 2000-06-30 | 2003-09-03 | 兰姆研究公司 | Semiconductor processing equipment having improved particle performance |
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| KR100735936B1 (en) | 2007-07-06 |
| TWI380360B (en) | 2012-12-21 |
| CN1790615A (en) | 2006-06-21 |
| CN101244945B (en) | 2013-05-29 |
| TW200634924A (en) | 2006-10-01 |
| CN101244945A (en) | 2008-08-20 |
| KR20060052455A (en) | 2006-05-19 |
| JP2006140238A (en) | 2006-06-01 |
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