CN100382199C - 具有交织电路芯片群组的电路模块 - Google Patents

具有交织电路芯片群组的电路模块 Download PDF

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CN100382199C
CN100382199C CNB2004100422885A CN200410042288A CN100382199C CN 100382199 C CN100382199 C CN 100382199C CN B2004100422885 A CNB2004100422885 A CN B2004100422885A CN 200410042288 A CN200410042288 A CN 200410042288A CN 100382199 C CN100382199 C CN 100382199C
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S·切努帕蒂
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Infineon Technologies AG
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/18Printed circuits structurally associated with non-printed electric components
    • H05K1/181Printed circuits structurally associated with non-printed electric components associated with surface mounted components
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0652Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next and on each other, i.e. mixed assemblies
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007Types of components
    • H05K2201/10159Memory
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10431Details of mounted components
    • H05K2201/10507Involving several components
    • H05K2201/10515Stacked components
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10431Details of mounted components
    • H05K2201/10507Involving several components
    • H05K2201/10522Adjacent components
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/50Peripheral circuit region structures
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
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Abstract

本发明提供了一种具有高密度电路芯片排列的电路模块,其具有一载体(10)以及配置于该载体(10)的一表面(12、14)上的电路芯片(24、26)的多个堆栈(20、22),而每一个堆栈具有多个配置于不同层(50、52、54、56)中的电路芯片。该电路芯片被分类为不同的群组,其中该群组不在同时间内驱动,且该电路芯片加以配置,以使得属于相同群组的电路芯片被配置于相邻堆栈的不同层中。因而,通过本发明,能够获得改善的功率消散,并且改善了电路模块的效能及错误率。

Description

具有交织电路芯片群组的电路模块
技术领域
本发明涉及一电路模块,并且,特别是涉及被包含于一载体中的一电路模块以及配置于该载体上的电路芯片组,其中该电路芯片被分类为在不同时间驱动的不同群组。
背景技术
存储器模块的传统结构,DIMMs(双直列内存模块,Dual In-LineMemory Module),举例而言,包括一模块板(module board)以及,举例而言,配置于该模块板的上的存储器芯片、DRAM芯片的群组。在高密度存储器模块的中,该存储器芯片于该模块板的上进行堆栈,其中,每一个堆栈包含彼此堆栈于其上的多个存储器芯片,通常,每一个堆栈包括两个芯片,一个被配置于该堆栈的一第一层中,而一个被配置于该堆栈的一第二层中。
而在如此的习知存储器模块中,该存储器芯片被分类为两个存储器芯片组(banks),其中,每一次仅一个存储器芯片组驱动,而该有效组的该存储器芯片乃是藉由一组选择信号而加以选择。在上述的习知存储器模块中,该存储器芯片的排列为,属于一第一组的该存储器芯片被配置于该存储器芯片堆栈的该第一层(举例而言,底层),相反的,属于一第二组的该存储器芯片则被配置于该存储器芯片堆栈的该第二层(举例而言,顶层)。
但在如此的高密度存储器模块中的功率消散非常地高。如上述所解释的该存储器芯片的排列,其中属于相同存储器组的存储器芯片被配置于相同的层中,因此热消耗困难。所以,该存储器模块的温度可以到达80至90℃,尤其是,如果底部芯片组驱动,对周围空气的热对流是相当糟的,而这可能会造成存储器芯片的毁损,以及因此该存储器模块的毁损。
发明内容
本发明的目的在于提供一具有高密度电路芯片排列的可变电路模块。
本发明提供一种电路模块,包括:
一载体;
电路芯片堆栈,其配置于该载体的一表面的上,并包括数配置于不同层中的电路芯片,
其中该电路芯片被分类为不同的群组,其中每一次一个群组驱动,
其中该电路芯片加以配置,因而使属于相同群组的电路芯片被配置于相邻堆栈中的不同层的中。
本发明的基础为,可以具有优势地使用在电路模块的电路芯片的排列中,相同层的相邻电路芯片不同时驱动的结果,以使在电路模块上的功率消散更为平均。
根据本发明的排列,电路芯片加以交织,因此,在每一堆栈中彼此相邻的芯片、或在每一层中彼此相邻的芯片,会属于不在同一时间内驱动的不同群组。
因此,根据本发明,不驱动的芯片,亦即,冷却芯片(coolerchips),被配置于驱动芯片之间,所以,该模块所被加热到的最大温度可以被降低。
电路芯片堆栈可被配置于由一电路板所形成的该载体的两个主要表面。而在如此的例子中,较佳地是,那些属于不同群组的电路芯片以该电路板配置于其间的方式彼此相对。
根据本发明的较佳实施例,该电路模块为一存储器模块(举例而言,一DIMM),并且该电路芯片为存储器芯片(举例而言,DRAM)。而在如此的存储器模块中,该存储器芯片被分类为不同的存储器组(举例而言,DRAM组),该不同的存储器组中,每一次仅一个驱动,其中当利用一组选择信号(bank select signal)而使一存储器组驱动时,则会使得属于该关连存储器组的存储器芯片被驱动。
因此,与现有技术的解决方案相比,本发明利用同时间驱动的电路芯片的特殊排列,而使得电路模块上获得改善的功率消散成为可能,这也使得在该模块上的功率消散更平均,并且给予对周围空气的热对流足够的面积及时间,这更使得可在一较低的温度操作某一模块,进而改善该电路模块的效能及错误率,另外,与现有技术的解决方案相比,根据本发明较佳实施例的排列并不需要额外的成本。
本发明的一较佳实施例将结合附图予以说明。
附图说明
图1显示具体化本发明的存储器模块的示意图。
具体实施方式
图1显示服务器专用DIMM(registered DIMM)形式的存储器模块的示意图,以代表根据本发明的电路模块。该存储器模块包括一模块板10,其具有一第一主要表面12,以及与该第一主要表面相对的一第二主要表面14,存储器芯片的堆栈20形成于该第一主要表面12的上,而堆栈22则形成于该第二主要表面14的上。本实施例更详细的说明,显示于图1中,九个堆栈20形成于该第一主要表面12的上,也有九个堆栈22形成于该第二主要表面14的上。
该堆栈20及22的每一个包括两个电路芯片24及26,而该电路芯片24属于一第一DRAM组,DRAM组1,反的,图1中画斜线所指示的该存储器芯片26则属于一第二DRAM组,DRAM组2。
存储器芯片的各个堆栈可以由熟悉此存储器的人以所熟知的方式加以执行,因此,该存储器芯片于图1中所概要显示并以参考符号30所表示的各个终端连接至位于该电路板10上的各个终端,因而可以达成操作该存储器芯片的电连接。更甚者,配置于该电路板10的该第一及该第二主要表面12及14上的寄存器40及42显示于图1中。
正如可由图1所见,根据本发明,属于DRAM组1的等该电路芯片24二者择一地被配置于该堆栈20的一顶层50以及一底层52的中,类似地,属于DRAM组2的该电路芯片26二者择一地被配置于该顶层50以及该底层52的中。因此,属于相同组的两个相邻堆栈的该存储器芯片被配置于不同层的中。
以相同的方式,被配置于该电路板10的该第二主要表面14上的该堆栈22的该电路芯片24及26,二者择一地加以配置于该堆栈22的一顶层54及一底层56的中,因此,该堆栈22的该电路芯片以与该堆栈的该电路芯片相同的方式而加以交织。再者,该模块板置于其间而彼此相对的该堆栈20及22的该电路芯片加以配置,因而使得直接彼此相对的该存储器芯片会属于不同的DRAM组,所以,在图1中所示的该存储器芯片中,属于不同存储器组而分别以平行于该模块板10及法线的两个方向相邻的存储器芯片的交织排列可以加以达成,是以,根据本发明可以达成具有优势的热消散。
在操作的过程中,该存储器芯片的控制与习知具有堆栈芯片的存储器模块相同,但例外的是,根据本发明的该存储器芯片,会受到属于相同存储器组的驱动芯片会以上述的方式进行交织的控制。
本发明已经以存储器模块做为参考而加以叙述,但很清楚地,本发明也可用于与包括电路芯片的堆栈的其它电路模块的连接中,另外,每一个电路芯片堆栈可具有多于两个的属于两个或多个不同电路芯片群组的电路芯片,不管在那个例子中,电路芯片的排列皆为,在相邻堆栈的相同层中的存储器芯片属于不同的群组,另外,该排列将是,在相同堆栈中的相邻存储器芯片属于不在相同时间内驱动的不同群组。因此,既然相邻芯片总是属于不同组,并且不同组不于相同时间内驱动,芯片所产生的热则可均匀地分散于堆栈中的芯片之间,因此,模块或部分模块被加热到的最大温度可被降低。

Claims (7)

1.一种电路模块,包括:
载体(10);以及
电路芯片(24、26)的堆栈(20、22),其配置于该载体(10)的一表面(12、14)的上,并包括多个配置于不同层(50、52、54、56)的中的电路芯片,
其中所述电路芯片(24、26)被分类为不同的群组,其中所述群组不在相同时间内驱动,
其中所述电路芯片(24、26)加以配置,因而使属于相同群组的电路芯片被配置于相邻堆栈中的不同层中。
2.根据权利要求1所述的电路模块,其中电路芯片的堆栈(20、22)被配置于该载体(10)的一第一表面(12)以及一第二表面(14)。
3.根据权利要求1或2所述的电路模块,其中该电路模块为一存储器模块,并且所述电路芯片为存储器芯片。
4.根据权利要求3所述的电路模块,其中该存储器模块为一双直列内存模块,并且所述存储器芯片为动态随机存取存储器。
5.根据权利要求3所述的电路模块,其中由所述电路芯片所分类成的所述群组分别为存储器组。
6.根据权利要求1或2所述的电路模块,其更包括用以驱动属于相同群组的所述电路芯片(24、26)的装置。
7.根据权利要求6所述的电路模块,其中该用以驱动属于相同群组的这些电路芯片的装置包括一组选择信号。
CNB2004100422885A 2003-05-08 2004-05-08 具有交织电路芯片群组的电路模块 Expired - Fee Related CN100382199C (zh)

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EP03010411A EP1475836B1 (en) 2003-05-08 2003-05-08 Circuit module having interleaved groups of circuit chips
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US6917100B2 (en) 2005-07-12
CN1551221A (zh) 2004-12-01
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DE60305006T2 (de) 2006-11-02
US20040222507A1 (en) 2004-11-11
EP1475836B1 (en) 2006-05-03

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