CN100377294C - 单晶硅膜的制造方法 - Google Patents
单晶硅膜的制造方法 Download PDFInfo
- Publication number
- CN100377294C CN100377294C CNB2004100013826A CN200410001382A CN100377294C CN 100377294 C CN100377294 C CN 100377294C CN B2004100013826 A CNB2004100013826 A CN B2004100013826A CN 200410001382 A CN200410001382 A CN 200410001382A CN 100377294 C CN100377294 C CN 100377294C
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000013078 crystal Substances 0.000 claims abstract description 151
- 238000000034 method Methods 0.000 claims abstract description 71
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 238000002425 crystallisation Methods 0.000 claims abstract description 26
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract 5
- 239000002184 metal Substances 0.000 claims abstract 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 48
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 29
- 230000008569 process Effects 0.000 claims description 29
- 230000008025 crystallization Effects 0.000 claims description 25
- 230000005855 radiation Effects 0.000 claims description 25
- 239000012528 membrane Substances 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 8
- 230000001678 irradiating effect Effects 0.000 claims description 8
- 238000012937 correction Methods 0.000 claims description 4
- 238000011161 development Methods 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000004033 plastic Substances 0.000 claims description 2
- 229920003023 plastic Polymers 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims 2
- 229910020750 SixGey Inorganic materials 0.000 claims 1
- 229910017817 a-Ge Inorganic materials 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010409 thin film Substances 0.000 abstract description 11
- 229910021419 crystalline silicon Inorganic materials 0.000 description 47
- 230000002093 peripheral effect Effects 0.000 description 24
- 230000000694 effects Effects 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 239000010408 film Substances 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 238000013461 design Methods 0.000 description 8
- 238000005755 formation reaction Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 230000018109 developmental process Effects 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000012212 insulator Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000007711 solidification Methods 0.000 description 3
- 230000008023 solidification Effects 0.000 description 3
- 239000010949 copper Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 240000007762 Ficus drupacea Species 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000002224 dissection Methods 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000005499 laser crystallization Methods 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 238000011165 process development Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/42—Bombardment with radiation
- H01L21/423—Bombardment with radiation with high-energy radiation
- H01L21/428—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02678—Beam shaping, e.g. using a mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02691—Scanning of a beam
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Optics & Photonics (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (9)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR19953/03 | 2003-03-31 | ||
KR19953/2003 | 2003-03-31 | ||
KR1020030019953A KR100618184B1 (ko) | 2003-03-31 | 2003-03-31 | 결정화 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1534725A CN1534725A (zh) | 2004-10-06 |
CN100377294C true CN100377294C (zh) | 2008-03-26 |
Family
ID=32985911
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100013826A Expired - Lifetime CN100377294C (zh) | 2003-03-31 | 2004-01-07 | 单晶硅膜的制造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7135388B2 (zh) |
JP (1) | JP2004311935A (zh) |
KR (1) | KR100618184B1 (zh) |
CN (1) | CN100377294C (zh) |
TW (1) | TWI310059B (zh) |
Families Citing this family (55)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100400510B1 (ko) * | 2000-12-28 | 2003-10-08 | 엘지.필립스 엘시디 주식회사 | 실리콘 결정화 장치와 실리콘 결정화 방법 |
KR100496251B1 (ko) * | 2002-11-25 | 2005-06-17 | 엘지.필립스 엘시디 주식회사 | 순차측면고상 결정화 기술을 이용한 비정질 실리콘층의결정화 방법 |
US7164152B2 (en) | 2003-09-16 | 2007-01-16 | The Trustees Of Columbia University In The City Of New York | Laser-irradiated thin films having variable thickness |
US7318866B2 (en) | 2003-09-16 | 2008-01-15 | The Trustees Of Columbia University In The City Of New York | Systems and methods for inducing crystallization of thin films using multiple optical paths |
US7311778B2 (en) | 2003-09-19 | 2007-12-25 | The Trustees Of Columbia University In The City Of New York | Single scan irradiation for crystallization of thin films |
KR101212378B1 (ko) * | 2004-11-18 | 2012-12-13 | 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 | 결정 방위 제어형 폴리실리콘막을 생성하기 위한 장치 및 방법 |
US7645337B2 (en) | 2004-11-18 | 2010-01-12 | The Trustees Of Columbia University In The City Of New York | Systems and methods for creating crystallographic-orientation controlled poly-silicon films |
KR100599043B1 (ko) * | 2005-03-18 | 2006-07-12 | 삼성전자주식회사 | 반도체 장치의 제조 방법 |
US8221544B2 (en) | 2005-04-06 | 2012-07-17 | The Trustees Of Columbia University In The City Of New York | Line scan sequential lateral solidification of thin films |
KR101167662B1 (ko) * | 2005-08-04 | 2012-07-23 | 삼성전자주식회사 | 순차 측면 고상화용 마스크 및 이의 제조 방법 |
KR101132404B1 (ko) * | 2005-08-19 | 2012-04-03 | 삼성전자주식회사 | 다결정 실리콘 박막의 제조 방법 및 이를 포함하는 박막트랜지스터의 제조 방법 |
KR100731752B1 (ko) | 2005-09-07 | 2007-06-22 | 삼성에스디아이 주식회사 | 박막트랜지스터 |
CN101617069B (zh) | 2005-12-05 | 2012-05-23 | 纽约市哥伦比亚大学理事会 | 处理膜的***和方法以及薄膜 |
KR100928664B1 (ko) * | 2007-04-09 | 2009-11-27 | 삼성전자주식회사 | 낸드 플래시 메모리 소자의 제조 방법 |
US20070262311A1 (en) * | 2006-05-11 | 2007-11-15 | Toppoly Optoelectronics Corp. | Flat panel display and fabrication method and thereof |
KR100803867B1 (ko) * | 2006-09-14 | 2008-02-14 | 연세대학교 산학협력단 | 비정질 실리콘층의 결정화 방법 및 이를 이용한 박막트랜지스터의 제조방법 |
US8394483B2 (en) | 2007-01-24 | 2013-03-12 | Micron Technology, Inc. | Two-dimensional arrays of holes with sub-lithographic diameters formed by block copolymer self-assembly |
KR101397567B1 (ko) * | 2007-01-24 | 2014-05-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체막의 결정화 방법 및 반도체장치의 제작방법 |
US8083953B2 (en) * | 2007-03-06 | 2011-12-27 | Micron Technology, Inc. | Registered structure formation via the application of directed thermal energy to diblock copolymer films |
US8557128B2 (en) | 2007-03-22 | 2013-10-15 | Micron Technology, Inc. | Sub-10 nm line features via rapid graphoepitaxial self-assembly of amphiphilic monolayers |
JP2008244374A (ja) * | 2007-03-29 | 2008-10-09 | Nec Lcd Technologies Ltd | 半導体薄膜の製造方法、半導体薄膜及び薄膜トランジスタ |
US8097175B2 (en) | 2008-10-28 | 2012-01-17 | Micron Technology, Inc. | Method for selectively permeating a self-assembled block copolymer, method for forming metal oxide structures, method for forming a metal oxide pattern, and method for patterning a semiconductor structure |
US8294139B2 (en) | 2007-06-21 | 2012-10-23 | Micron Technology, Inc. | Multilayer antireflection coatings, structures and devices including the same and methods of making the same |
US7959975B2 (en) | 2007-04-18 | 2011-06-14 | Micron Technology, Inc. | Methods of patterning a substrate |
US8372295B2 (en) | 2007-04-20 | 2013-02-12 | Micron Technology, Inc. | Extensions of self-assembled structures to increased dimensions via a “bootstrap” self-templating method |
US8404124B2 (en) | 2007-06-12 | 2013-03-26 | Micron Technology, Inc. | Alternating self-assembling morphologies of diblock copolymers controlled by variations in surfaces |
US8080615B2 (en) | 2007-06-19 | 2011-12-20 | Micron Technology, Inc. | Crosslinkable graft polymer non-preferentially wetted by polystyrene and polyethylene oxide |
US7776718B2 (en) * | 2007-06-25 | 2010-08-17 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor substrate with reduced gap size between single-crystalline layers |
WO2009039482A1 (en) | 2007-09-21 | 2009-03-26 | The Trustees Of Columbia University In The City Of New York | Collections of laterally crystallized semiconductor islands for use in thin film transistors |
JP5385289B2 (ja) | 2007-09-25 | 2014-01-08 | ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | 横方向に結晶化した薄膜上に作製される薄膜トランジスタデバイスにおいて高い均一性を生成する方法 |
JP2009135448A (ja) * | 2007-11-01 | 2009-06-18 | Semiconductor Energy Lab Co Ltd | 半導体基板の作製方法及び半導体装置の作製方法 |
CN101919058B (zh) | 2007-11-21 | 2014-01-01 | 纽约市哥伦比亚大学理事会 | 用于制备外延纹理厚膜的***和方法 |
WO2009067688A1 (en) | 2007-11-21 | 2009-05-28 | The Trustees Of Columbia University In The City Of New York | Systems and methods for preparing epitaxially textured polycrystalline films |
US8012861B2 (en) | 2007-11-21 | 2011-09-06 | The Trustees Of Columbia University In The City Of New York | Systems and methods for preparing epitaxially textured polycrystalline films |
US8999492B2 (en) | 2008-02-05 | 2015-04-07 | Micron Technology, Inc. | Method to produce nanometer-sized features with directed assembly of block copolymers |
US8101261B2 (en) * | 2008-02-13 | 2012-01-24 | Micron Technology, Inc. | One-dimensional arrays of block copolymer cylinders and applications thereof |
US8569155B2 (en) | 2008-02-29 | 2013-10-29 | The Trustees Of Columbia University In The City Of New York | Flash lamp annealing crystallization for large area thin films |
US8426313B2 (en) | 2008-03-21 | 2013-04-23 | Micron Technology, Inc. | Thermal anneal of block copolymer films with top interface constrained to wet both blocks with equal preference |
US8425982B2 (en) | 2008-03-21 | 2013-04-23 | Micron Technology, Inc. | Methods of improving long range order in self-assembly of block copolymer films with ionic liquids |
US8114300B2 (en) * | 2008-04-21 | 2012-02-14 | Micron Technology, Inc. | Multi-layer method for formation of registered arrays of cylindrical pores in polymer films |
US8114301B2 (en) | 2008-05-02 | 2012-02-14 | Micron Technology, Inc. | Graphoepitaxial self-assembly of arrays of downward facing half-cylinders |
JP2009302251A (ja) * | 2008-06-12 | 2009-12-24 | Sharp Corp | レーザ結晶化装置、マスク、レーザ結晶化方法、結晶材、および半導体素子 |
US7914619B2 (en) * | 2008-11-03 | 2011-03-29 | International Business Machines Corporation | Thick epitaxial silicon by grain reorientation annealing and applications thereof |
CN102232239A (zh) | 2008-11-14 | 2011-11-02 | 纽约市哥伦比亚大学理事会 | 用于薄膜结晶的***和方法 |
US9646831B2 (en) | 2009-11-03 | 2017-05-09 | The Trustees Of Columbia University In The City Of New York | Advanced excimer laser annealing for thin films |
US9087696B2 (en) | 2009-11-03 | 2015-07-21 | The Trustees Of Columbia University In The City Of New York | Systems and methods for non-periodic pulse partial melt film processing |
US8440581B2 (en) | 2009-11-24 | 2013-05-14 | The Trustees Of Columbia University In The City Of New York | Systems and methods for non-periodic pulse sequential lateral solidification |
KR101642834B1 (ko) | 2010-04-09 | 2016-08-11 | 삼성전자주식회사 | Leg 공정을 이용하여 벌크 실리콘 웨이퍼의 필요한 영역내에 soⅰ층을 형성하는 반도체 소자의 제조방법 |
US8304493B2 (en) | 2010-08-20 | 2012-11-06 | Micron Technology, Inc. | Methods of forming block copolymers |
US8900963B2 (en) | 2011-11-02 | 2014-12-02 | Micron Technology, Inc. | Methods of forming semiconductor device structures, and related structures |
US9356171B2 (en) * | 2012-01-25 | 2016-05-31 | The Trustees Of Dartmouth College | Method of forming single-crystal semiconductor layers and photovaltaic cell thereon |
US9087699B2 (en) | 2012-10-05 | 2015-07-21 | Micron Technology, Inc. | Methods of forming an array of openings in a substrate, and related methods of forming a semiconductor device structure |
US9229328B2 (en) | 2013-05-02 | 2016-01-05 | Micron Technology, Inc. | Methods of forming semiconductor device structures, and related semiconductor device structures |
US9177795B2 (en) | 2013-09-27 | 2015-11-03 | Micron Technology, Inc. | Methods of forming nanostructures including metal oxides |
CN106702495A (zh) * | 2016-12-27 | 2017-05-24 | 陕西科技大学 | 一种单晶薄膜的制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1050221C (zh) * | 1994-12-27 | 2000-03-08 | 松下电器产业株式会社 | 多结晶薄膜的形成方法和制造薄膜晶体管的方法 |
JP2001093835A (ja) * | 1999-09-22 | 2001-04-06 | Sharp Corp | 半導体装置の製造方法 |
US6326248B1 (en) * | 1994-06-02 | 2001-12-04 | Semiconductor Energy Laboratory Co., Ltd. | Process for fabricating semiconductor device |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3213338B2 (ja) * | 1991-05-15 | 2001-10-02 | 株式会社リコー | 薄膜半導体装置の製法 |
KR100234895B1 (ko) * | 1997-05-12 | 1999-12-15 | 구본준 | 비정질 실리콘의 결정화 방법 |
US6326286B1 (en) * | 1998-06-09 | 2001-12-04 | Lg. Philips Lcd Co., Ltd. | Method for crystallizing amorphous silicon layer |
-
2003
- 2003-03-31 KR KR1020030019953A patent/KR100618184B1/ko active IP Right Grant
- 2003-11-14 TW TW092131894A patent/TWI310059B/zh not_active IP Right Cessation
- 2003-11-14 US US10/714,226 patent/US7135388B2/en not_active Expired - Lifetime
- 2003-11-20 JP JP2003391471A patent/JP2004311935A/ja active Pending
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2004
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US6326248B1 (en) * | 1994-06-02 | 2001-12-04 | Semiconductor Energy Laboratory Co., Ltd. | Process for fabricating semiconductor device |
CN1050221C (zh) * | 1994-12-27 | 2000-03-08 | 松下电器产业株式会社 | 多结晶薄膜的形成方法和制造薄膜晶体管的方法 |
JP2001093835A (ja) * | 1999-09-22 | 2001-04-06 | Sharp Corp | 半導体装置の製造方法 |
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US20040192013A1 (en) | 2004-09-30 |
JP2004311935A (ja) | 2004-11-04 |
TW200419017A (en) | 2004-10-01 |
CN1534725A (zh) | 2004-10-06 |
US7135388B2 (en) | 2006-11-14 |
KR100618184B1 (ko) | 2006-08-31 |
TWI310059B (en) | 2009-05-21 |
KR20040085310A (ko) | 2004-10-08 |
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