CH519839A - Thin-film circuit prodn - including capacitor s and with combined iro counter electrodes tracks and contact pads - Google Patents
Thin-film circuit prodn - including capacitor s and with combined iro counter electrodes tracks and contact padsInfo
- Publication number
- CH519839A CH519839A CH1602167A CH1602167A CH519839A CH 519839 A CH519839 A CH 519839A CH 1602167 A CH1602167 A CH 1602167A CH 1602167 A CH1602167 A CH 1602167A CH 519839 A CH519839 A CH 519839A
- Authority
- CH
- Switzerland
- Prior art keywords
- electrodes
- dielectric
- combined
- iro
- tracks
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 3
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 abstract 2
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 230000001771 impaired effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 238000001771 vacuum deposition Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
The basic electrodes are applied first to the insulated substrate and are either of Fe-Ni alloy or of Al. The dielectric is then applied to parts of those electrodes and with Al electrodes this, is an oxide of Si or Ti, esp. formed by chemical reaction, and next the resistor track material is applied to the substrate. The dielectric is then annealed at 150-500 degrees C in an oxidising atmos. The combined counter electrode, contact pad and conductor track layer is then deposited with the substrate at approx 300 degrees C in one or more vacuum deposition stages, the counter electrodes being over the dielectric covered parts of the basic electrodes and those parts of the basic electrode layer which are not dielectric covered being covered by contact pad sections of the final layer of Fe-Ni. Dielectric power factor is not impaired by later stages of prodn.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DD11931666 | 1966-08-17 | ||
| DD12107066 | 1966-11-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH519839A true CH519839A (en) | 1972-02-29 |
Family
ID=25747116
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH1602167A CH519839A (en) | 1966-08-17 | 1967-11-16 | Thin-film circuit prodn - including capacitor s and with combined iro counter electrodes tracks and contact pads |
Country Status (1)
| Country | Link |
|---|---|
| CH (1) | CH519839A (en) |
-
1967
- 1967-11-16 CH CH1602167A patent/CH519839A/en unknown
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PLZ | Patent of addition ceased |