JPS56161674A - Metal oxide semiconductor device - Google Patents
Metal oxide semiconductor deviceInfo
- Publication number
- JPS56161674A JPS56161674A JP6474980A JP6474980A JPS56161674A JP S56161674 A JPS56161674 A JP S56161674A JP 6474980 A JP6474980 A JP 6474980A JP 6474980 A JP6474980 A JP 6474980A JP S56161674 A JPS56161674 A JP S56161674A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode wire
- wiring
- semiconductor device
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE:To improve the reproducibility and the reliability of a metal oxide semiconductor device by employing a compound layer of insoluble metal such as Ta or the like and a semiconductor such as Si or the like for a gate metallic layer and a wiring layer for an MOS structure, thereby eliminating high temperature treatment in the step of forming an electrode wire. CONSTITUTION:This is applied for a capacitive electrode wire 24 and a gate electrode wire 27 which heretofore used two-layer polysilicon in a circuit or the like having one-transistor type memory cell. A compound or mixture of, for example, Ta and Si is coated, for example, by a method such as a sputtering method instead of the polysilicon layers. Interlayer insulating layers 25, 29 are used by anodizing (or thermally oxidizing at low temperature) the compound layer as TaO5 (or TaO5 containing SiO2) having high moisture resistance. Thus, the high temperature treatment of approx. 1,000 deg.C becomes unnecessary in the step of wiring the electrode, and an MOS circuit having low resistivity, and excellent interlayer insulation electrode wiring structure can be formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6474980A JPS56161674A (en) | 1980-05-16 | 1980-05-16 | Metal oxide semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6474980A JPS56161674A (en) | 1980-05-16 | 1980-05-16 | Metal oxide semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56161674A true JPS56161674A (en) | 1981-12-12 |
Family
ID=13267114
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6474980A Pending JPS56161674A (en) | 1980-05-16 | 1980-05-16 | Metal oxide semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56161674A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61212040A (en) * | 1985-03-18 | 1986-09-20 | Hitachi Ltd | Manufacture of semiconductor device |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5236477A (en) * | 1975-09-17 | 1977-03-19 | Philips Nv | Method of producing semiconductor device |
JPS547864A (en) * | 1977-06-21 | 1979-01-20 | Toshiba Corp | Manufacture for semiconductor device |
JPS54133089A (en) * | 1978-04-06 | 1979-10-16 | Nec Corp | Thin film capacitor and its manufacture |
-
1980
- 1980-05-16 JP JP6474980A patent/JPS56161674A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5236477A (en) * | 1975-09-17 | 1977-03-19 | Philips Nv | Method of producing semiconductor device |
JPS547864A (en) * | 1977-06-21 | 1979-01-20 | Toshiba Corp | Manufacture for semiconductor device |
JPS54133089A (en) * | 1978-04-06 | 1979-10-16 | Nec Corp | Thin film capacitor and its manufacture |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61212040A (en) * | 1985-03-18 | 1986-09-20 | Hitachi Ltd | Manufacture of semiconductor device |
JPH0789549B2 (en) * | 1985-03-18 | 1995-09-27 | 株式会社日立製作所 | Method for manufacturing semiconductor device |
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