CH330205A - Verfahren zum Ziehen eines stabförmigen kristallinen Körpers, vorzugsweise Halbleiterkörpers - Google Patents

Verfahren zum Ziehen eines stabförmigen kristallinen Körpers, vorzugsweise Halbleiterkörpers

Info

Publication number
CH330205A
CH330205A CH330205DA CH330205A CH 330205 A CH330205 A CH 330205A CH 330205D A CH330205D A CH 330205DA CH 330205 A CH330205 A CH 330205A
Authority
CH
Switzerland
Prior art keywords
rod
shaped crystalline
semiconductor body
semiconductor
crystalline body
Prior art date
Application number
Other languages
English (en)
Inventor
Hans Dr Schweickert
Haus Joachim
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH330205A publication Critical patent/CH330205A/de

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/10Solid or liquid components, e.g. Verneuil method
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/06Non-vertical pulling
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/08Downward pulling
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/91Downward pulling
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/1024Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032Seed pulling
    • Y10T117/1056Seed pulling including details of precursor replenishment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
CH330205D 1954-03-02 1955-02-08 Verfahren zum Ziehen eines stabförmigen kristallinen Körpers, vorzugsweise Halbleiterkörpers CH330205A (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES37783A DE1044768B (de) 1954-03-02 1954-03-02 Verfahren und Vorrichtung zum Ziehen eines stabfoermigen kristallinen Koerpers, vorzugsweise Halbleiterkoerpers
DES37925A DE1134967B (de) 1954-03-02 1954-03-02 Verfahren zum Ziehen eines stabfoermigen kristallinen Halbleiterkoerpers

Publications (1)

Publication Number Publication Date
CH330205A true CH330205A (de) 1958-05-31

Family

ID=25995136

Family Applications (1)

Application Number Title Priority Date Filing Date
CH330205D CH330205A (de) 1954-03-02 1955-02-08 Verfahren zum Ziehen eines stabförmigen kristallinen Körpers, vorzugsweise Halbleiterkörpers

Country Status (4)

Country Link
US (1) US2783168A (de)
CH (1) CH330205A (de)
DE (2) DE1134967B (de)
GB (1) GB784617A (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3093456A (en) * 1958-09-02 1963-06-11 Texas Instruments Inc Method for recovery and reuse of quartz containers
DE1188040B (de) * 1959-01-20 1965-03-04 Intermetall Vorrichtung zum Ziehen von Halbleitereinkristallen aus einer Schmelze konstanten Volumens

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2935478A (en) * 1955-09-06 1960-05-03 Gen Electric Co Ltd Production of semi-conductor bodies
US2879189A (en) * 1956-11-21 1959-03-24 Shockley William Method for growing junction semi-conductive devices
NL237834A (de) * 1958-04-09
DE1113682B (de) * 1958-04-26 1961-09-14 Standard Elektrik Lorenz Ag Verfahren zum Ziehen von Einkristallen, insbesondere aus Halbleitermaterial aus einer an einem Rohr haengenden Schmelze
DE1131187B (de) * 1958-06-03 1962-06-14 Wacker Chemie Gmbh Verfahren zum Reinigen, Umkristallisieren und Formen von Metallen, Nichtmetallen undderen Verbindungen oder Legierungen
NL112257C (de) * 1958-07-11
DE1094237B (de) * 1958-07-24 1960-12-08 Licentia Gmbh Verfahren zur Verminderung der Verspannungen von Impfkristallen
DE1077187B (de) * 1958-11-13 1960-03-10 Werk Fuer Bauelemente Der Nach Verfahren zur Herstellung von Einkristallen aus halbleitenden Stoffen
NL121446C (de) * 1958-11-17
DE1130414B (de) * 1959-04-10 1962-05-30 Elektronik M B H Verfahren und Vorrichtung zum Ziehen von Einkristallen
NL260305A (de) * 1960-01-20
DE1191789B (de) * 1960-10-25 1965-04-29 Siemens Ag Verfahren zum Ziehen von vorzugsweise einkristallinen Halbleiterstaeben
DE1238450B (de) * 1964-06-04 1967-04-13 Consortium Elektrochem Ind Verfahren zum Herstellen von spannungsfreien und rissefreien Staeben aus hochreinem Bor aus der Schmelze
DE1275996B (de) * 1965-07-10 1968-08-29 Siemens Ag Vorrichtung zum tiegelfreien Zonenschmelzen
DE1278993B (de) * 1965-07-15 1968-10-03 Halbleiterwerk Frankfurt Oder Vorrichtung zum tiegelfreien Zonenschmelzen von stabfoermigem Halbleitermaterial
DE2331004C3 (de) * 1973-06-18 1982-02-04 Siemens AG, 1000 Berlin und 8000 München Induktionsheizspule zum tiegelfreien Zonenschmelzen
DE2635373C2 (de) * 1975-08-08 1982-04-15 PCUK-Produits Chimiques Ugine Kuhlmann, 92400 Courbevoie, Hauts-de-Seine Verfahren und Vorrichtung zur kontinuierlichen Züchtung von Einkristallen bestimmter Form
FR2592064B1 (fr) * 1985-12-23 1988-02-12 Elf Aquitaine Dispositif pour former un bain d'un materiau semi-conducteur fondu afin d'y faire croitre un element cristallin
DE3865628D1 (de) * 1987-11-02 1991-11-21 Mitsubishi Materials Corp Einrichtung zur zuechtung von kristallen.
JP3478406B2 (ja) * 1992-09-09 2003-12-15 アルベマール・コーポレーシヨン 粒状物質の供給装置
US11352712B1 (en) * 2018-03-29 2022-06-07 Energy, United States Department Of Method for controlling fiber growth in a laser heated pedestal growth system by controlling a laser power output, a pedestal feedstock rate of motion, and a draw rate
CN109811404A (zh) * 2018-04-06 2019-05-28 姚小琴 一种用于晶体生长炉内的坩埚提取装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2631356A (en) * 1953-03-17 Method of making p-n junctions
US2214976A (en) * 1939-01-05 1940-09-17 Research Corp Apparatus for the manufacture of crystalline bodies
BE500569A (de) * 1950-01-13
US2615794A (en) * 1950-06-26 1952-10-28 Phillips Petroleum Co Crystallization apparatus
DE894293C (de) * 1951-06-29 1953-10-22 Western Electric Co Verfahren zur Herstellung eines Kristalls aus Halbleitermaterial

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3093456A (en) * 1958-09-02 1963-06-11 Texas Instruments Inc Method for recovery and reuse of quartz containers
DE1188040B (de) * 1959-01-20 1965-03-04 Intermetall Vorrichtung zum Ziehen von Halbleitereinkristallen aus einer Schmelze konstanten Volumens

Also Published As

Publication number Publication date
DE1044768B (de) 1958-11-27
US2783168A (en) 1957-02-26
DE1134967B (de) 1962-08-23
GB784617A (en) 1957-10-09

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