CH330205A - Verfahren zum Ziehen eines stabförmigen kristallinen Körpers, vorzugsweise Halbleiterkörpers - Google Patents
Verfahren zum Ziehen eines stabförmigen kristallinen Körpers, vorzugsweise HalbleiterkörpersInfo
- Publication number
- CH330205A CH330205A CH330205DA CH330205A CH 330205 A CH330205 A CH 330205A CH 330205D A CH330205D A CH 330205DA CH 330205 A CH330205 A CH 330205A
- Authority
- CH
- Switzerland
- Prior art keywords
- rod
- shaped crystalline
- semiconductor body
- semiconductor
- crystalline body
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
- C30B11/10—Solid or liquid components, e.g. Verneuil method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/06—Non-vertical pulling
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/08—Downward pulling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/91—Downward pulling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1056—Seed pulling including details of precursor replenishment
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES37783A DE1044768B (de) | 1954-03-02 | 1954-03-02 | Verfahren und Vorrichtung zum Ziehen eines stabfoermigen kristallinen Koerpers, vorzugsweise Halbleiterkoerpers |
DES37925A DE1134967B (de) | 1954-03-02 | 1954-03-02 | Verfahren zum Ziehen eines stabfoermigen kristallinen Halbleiterkoerpers |
Publications (1)
Publication Number | Publication Date |
---|---|
CH330205A true CH330205A (de) | 1958-05-31 |
Family
ID=25995136
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH330205D CH330205A (de) | 1954-03-02 | 1955-02-08 | Verfahren zum Ziehen eines stabförmigen kristallinen Körpers, vorzugsweise Halbleiterkörpers |
Country Status (4)
Country | Link |
---|---|
US (1) | US2783168A (de) |
CH (1) | CH330205A (de) |
DE (2) | DE1134967B (de) |
GB (1) | GB784617A (de) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3093456A (en) * | 1958-09-02 | 1963-06-11 | Texas Instruments Inc | Method for recovery and reuse of quartz containers |
DE1188040B (de) * | 1959-01-20 | 1965-03-04 | Intermetall | Vorrichtung zum Ziehen von Halbleitereinkristallen aus einer Schmelze konstanten Volumens |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2935478A (en) * | 1955-09-06 | 1960-05-03 | Gen Electric Co Ltd | Production of semi-conductor bodies |
US2879189A (en) * | 1956-11-21 | 1959-03-24 | Shockley William | Method for growing junction semi-conductive devices |
NL237834A (de) * | 1958-04-09 | |||
DE1113682B (de) * | 1958-04-26 | 1961-09-14 | Standard Elektrik Lorenz Ag | Verfahren zum Ziehen von Einkristallen, insbesondere aus Halbleitermaterial aus einer an einem Rohr haengenden Schmelze |
DE1131187B (de) * | 1958-06-03 | 1962-06-14 | Wacker Chemie Gmbh | Verfahren zum Reinigen, Umkristallisieren und Formen von Metallen, Nichtmetallen undderen Verbindungen oder Legierungen |
NL112257C (de) * | 1958-07-11 | |||
DE1094237B (de) * | 1958-07-24 | 1960-12-08 | Licentia Gmbh | Verfahren zur Verminderung der Verspannungen von Impfkristallen |
DE1077187B (de) * | 1958-11-13 | 1960-03-10 | Werk Fuer Bauelemente Der Nach | Verfahren zur Herstellung von Einkristallen aus halbleitenden Stoffen |
NL121446C (de) * | 1958-11-17 | |||
DE1130414B (de) * | 1959-04-10 | 1962-05-30 | Elektronik M B H | Verfahren und Vorrichtung zum Ziehen von Einkristallen |
NL260305A (de) * | 1960-01-20 | |||
DE1191789B (de) * | 1960-10-25 | 1965-04-29 | Siemens Ag | Verfahren zum Ziehen von vorzugsweise einkristallinen Halbleiterstaeben |
DE1238450B (de) * | 1964-06-04 | 1967-04-13 | Consortium Elektrochem Ind | Verfahren zum Herstellen von spannungsfreien und rissefreien Staeben aus hochreinem Bor aus der Schmelze |
DE1275996B (de) * | 1965-07-10 | 1968-08-29 | Siemens Ag | Vorrichtung zum tiegelfreien Zonenschmelzen |
DE1278993B (de) * | 1965-07-15 | 1968-10-03 | Halbleiterwerk Frankfurt Oder | Vorrichtung zum tiegelfreien Zonenschmelzen von stabfoermigem Halbleitermaterial |
DE2331004C3 (de) * | 1973-06-18 | 1982-02-04 | Siemens AG, 1000 Berlin und 8000 München | Induktionsheizspule zum tiegelfreien Zonenschmelzen |
DE2635373C2 (de) * | 1975-08-08 | 1982-04-15 | PCUK-Produits Chimiques Ugine Kuhlmann, 92400 Courbevoie, Hauts-de-Seine | Verfahren und Vorrichtung zur kontinuierlichen Züchtung von Einkristallen bestimmter Form |
FR2592064B1 (fr) * | 1985-12-23 | 1988-02-12 | Elf Aquitaine | Dispositif pour former un bain d'un materiau semi-conducteur fondu afin d'y faire croitre un element cristallin |
DE3865628D1 (de) * | 1987-11-02 | 1991-11-21 | Mitsubishi Materials Corp | Einrichtung zur zuechtung von kristallen. |
JP3478406B2 (ja) * | 1992-09-09 | 2003-12-15 | アルベマール・コーポレーシヨン | 粒状物質の供給装置 |
US11352712B1 (en) * | 2018-03-29 | 2022-06-07 | Energy, United States Department Of | Method for controlling fiber growth in a laser heated pedestal growth system by controlling a laser power output, a pedestal feedstock rate of motion, and a draw rate |
CN109811404A (zh) * | 2018-04-06 | 2019-05-28 | 姚小琴 | 一种用于晶体生长炉内的坩埚提取装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2631356A (en) * | 1953-03-17 | Method of making p-n junctions | ||
US2214976A (en) * | 1939-01-05 | 1940-09-17 | Research Corp | Apparatus for the manufacture of crystalline bodies |
BE500569A (de) * | 1950-01-13 | |||
US2615794A (en) * | 1950-06-26 | 1952-10-28 | Phillips Petroleum Co | Crystallization apparatus |
DE894293C (de) * | 1951-06-29 | 1953-10-22 | Western Electric Co | Verfahren zur Herstellung eines Kristalls aus Halbleitermaterial |
-
1954
- 1954-03-02 DE DES37925A patent/DE1134967B/de active Pending
- 1954-03-02 DE DES37783A patent/DE1044768B/de active Pending
-
1955
- 1955-02-08 CH CH330205D patent/CH330205A/de unknown
- 1955-02-18 US US489178A patent/US2783168A/en not_active Expired - Lifetime
- 1955-02-23 GB GB5504/55A patent/GB784617A/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3093456A (en) * | 1958-09-02 | 1963-06-11 | Texas Instruments Inc | Method for recovery and reuse of quartz containers |
DE1188040B (de) * | 1959-01-20 | 1965-03-04 | Intermetall | Vorrichtung zum Ziehen von Halbleitereinkristallen aus einer Schmelze konstanten Volumens |
Also Published As
Publication number | Publication date |
---|---|
DE1044768B (de) | 1958-11-27 |
US2783168A (en) | 1957-02-26 |
DE1134967B (de) | 1962-08-23 |
GB784617A (en) | 1957-10-09 |
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