CH365802A - Verfahren zur grossflächigen Kontaktierung eines Siliziumkörpers - Google Patents

Verfahren zur grossflächigen Kontaktierung eines Siliziumkörpers

Info

Publication number: CH365802A
Authority: CH; Switzerland
Prior art keywords: silicon body; area contacting; contacting; area; silicon
Prior art date: 1956-05-15

Application number

CH6954959A

Other languages

English (en)

Inventor

Adolf Dr Herlet

Hubert Dr Patalong

Norbert Dr Schink

Original Assignee

Siemens Ag

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1956-05-15

Filing date

1959-02-13

Publication date

1962-11-30

1959-02-13 Application filed by Siemens Ag filed Critical Siemens Ag

1962-11-30 Publication of CH365802A publication Critical patent/CH365802A/de

Links

XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
229910052710 silicon Inorganic materials 0.000 title 1
239000010703 silicon Substances 0.000 title 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/02—Alloys based on gold
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Chemical & Material Sciences (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Materials Engineering (AREA)
Ceramic Engineering (AREA)
Manufacturing & Machinery (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Contacts (AREA)
Conductive Materials (AREA)
Die Bonding (AREA)
Electrodes Of Semiconductors (AREA)
Manufacture And Refinement Of Metals (AREA)
Silicon Compounds (AREA)
Packages (AREA)
Powder Metallurgy (AREA)

CH6954959A 1956-05-15 1959-02-13 Verfahren zur grossflächigen Kontaktierung eines Siliziumkörpers CH365802A (de)

Applications Claiming Priority (4)

Application Number	Priority Date	Filing Date	Title
DES48725A DE1085613B (de)	1956-05-15	1956-05-15	Verfahren zur grossflaechigen Kontaktierung eines einkristallinen Siliziumkoerpers
DES52207A DE1279848B (de)	1956-05-15	1957-02-05	Verfahren zum grossflaechigen Kontaktieren eines einkristallinen Siliziumkoerpers
DES55807A DE1279849B (de)	1956-05-15	1957-11-08	Verfahren zum grossflaechigen Kontaktieren eines einkristallinen Siliziumkoerpers
DES57002A DE1282792B (de)	1956-05-15	1958-02-19	Verfahren zum grossflaechigen Kontaktieren eines einkristallinen Siliziumkoerpers

Publications (1)

Publication Number	Publication Date
CH365802A true CH365802A (de)	1962-11-30

Family

ID=27437483

Family Applications (4)

Application Number	Title	Priority Date	Filing Date
CH360732D CH360732A (de)	1956-05-15	1957-05-07	Verfahren zur grossflächigen Kontaktierung eines einkristallinen Siliziumkörpers
CH5524458A CH365800A (de)	1956-05-15	1958-01-29	Verfahren zur grossflächigen Kontaktierung eines einkristallinen Siliziumkörpers
CH6568958A CH365801A (de)	1956-05-15	1958-11-01	Verfahren zur grossflächigen Kontaktierung eines einkristallinen Siliziumkörpers
CH6954959A CH365802A (de)	1956-05-15	1959-02-13	Verfahren zur grossflächigen Kontaktierung eines Siliziumkörpers

Family Applications Before (3)

Application Number	Title	Priority Date	Filing Date
CH360732D CH360732A (de)	1956-05-15	1957-05-07	Verfahren zur grossflächigen Kontaktierung eines einkristallinen Siliziumkörpers
CH5524458A CH365800A (de)	1956-05-15	1958-01-29	Verfahren zur grossflächigen Kontaktierung eines einkristallinen Siliziumkörpers
CH6568958A CH365801A (de)	1956-05-15	1958-11-01	Verfahren zur grossflächigen Kontaktierung eines einkristallinen Siliziumkörpers

Country Status (8)

Country	Link
US (4)	US2898528A (de)
CH (4)	CH360732A (de)
DE (4)	DE1085613B (de)
FR (1)	FR1174436A (de)
GB (4)	GB846744A (de)
NL (7)	NL235480A (de)
NO (1)	NO120536B (de)
SE (3)	SE323146B (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3031747A (en) *	1957-12-31	1962-05-01	Tung Sol Electric Inc	Method of forming ohmic contact to silicon
NL240107A (de) *	1958-06-14
NL230892A (de) *	1958-08-27
BE590762A (de) *	1959-05-12
US3068127A (en) *	1959-06-02	1962-12-11	Siemens Ag	Method of producing a highly doped p-type zone and an appertaining contact on a semiconductor crystal
DE1268470B (de) *	1959-06-23	1968-05-16	Licentia Gmbh	Vorrichtung zum Aufschmelzen eines Goldueberzuges auf die Endflaeche eines Platindrahtstueckes geringen Durchmessers
US2973466A (en) *	1959-09-09	1961-02-28	Bell Telephone Labor Inc	Semiconductor contact
NL261280A (de) *	1960-02-25	1900-01-01
US3181935A (en) *	1960-03-21	1965-05-04	Texas Instruments Inc	Low-melting point materials and method of their manufacture
US3124868A (en) *	1960-04-18	1964-03-17		Method of making semiconductor devices
GB916379A (en) *	1960-05-23	1963-01-23	Ass Elect Ind	Improvements in and relating to semiconductor junction units
DE1125084B (de) *	1961-01-31	1962-03-08	Telefunken Patent	Verfahren zum Auflegieren von Legierungsmaterial auf einen Halbleiterkoerper
US3127285A (en) *	1961-02-21	1964-03-31		Vapor condensation doping method
US3226265A (en) *	1961-03-30	1965-12-28	Siemens Ag	Method for producing a semiconductor device with a monocrystalline semiconductor body
GB953034A (en) *	1961-07-13	1964-03-25	Clevite Corp	Improvements in or relating to semiconductor devices
NL296608A (de) *	1962-08-15
US3394994A (en) *	1966-04-26	1968-07-30	Westinghouse Electric Corp	Method of varying the thickness of dendrites by addition of an impurity which controls growith in the <111> direction
US3518498A (en) *	1967-12-27	1970-06-30	Gen Electric	High-q,high-frequency silicon/silicon-dioxide capacitor
ES374318A1 (es) *	1968-12-10	1972-03-16	Matsushita Electronics Corp	Un metodo de fabricar un dispositivo semiconductor sensiblea la presion.
US3897277A (en) *	1973-10-30	1975-07-29	Gen Electric	High aspect ratio P-N junctions by the thermal gradient zone melting technique

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
AT117475B (de) *	1924-06-30	1930-04-25	Degussa	Verfahren zur Darstellung von Substitutionsprodukten des ß-Jodpyridins.
US2792538A (en) *	1950-09-14	1957-05-14	Bell Telephone Labor Inc	Semiconductor translating devices with embedded electrode
NL162993B (nl) *	1950-09-14		Bosch Gmbh Robert	Brandstofinspuitinrichting voor mengselcomprimerende verbrandigsmotoren met afzonderlijke ontsteking.
BE517459A (de) *	1952-02-07
US2765245A (en) *	1952-08-22	1956-10-02	Gen Electric	Method of making p-n junction semiconductor units
NL87620C (de) *	1952-11-14
BE525280A (de) *	1952-12-31	1900-01-01
US2702360A (en) *	1953-04-30	1955-02-15	Rca Corp	Semiconductor rectifier
NL96840C (de) *	1953-05-11	1900-01-01
US2782492A (en) *	1954-02-11	1957-02-26	Atlas Powder Co	Method of bonding fine wires to copper or copper alloys
BE536150A (de) *	1954-03-05
US2736847A (en) *	1954-05-10	1956-02-28	Hughes Aircraft Co	Fused-junction silicon diodes
NL88273C (de) *	1954-12-01
US2784300A (en) *	1954-12-29	1957-03-05	Bell Telephone Labor Inc	Method of fabricating an electrical connection
NL107361C (de) *	1955-04-22	1900-01-01
US2825667A (en) *	1955-05-10	1958-03-04	Rca Corp	Methods of making surface alloyed semiconductor devices
US2809165A (en) *	1956-03-15	1957-10-08	Rca Corp	Semi-conductor materials
US2805370A (en) *	1956-04-26	1957-09-03	Bell Telephone Labor Inc	Alloyed connections to semiconductors
US2879190A (en) *	1957-03-22	1959-03-24	Bell Telephone Labor Inc	Fabrication of silicon devices

0
- NL NL107648D patent/NL107648C/xx active
- NL NL216614D patent/NL216614A/xx unknown
- NL NL112317D patent/NL112317C/xx active
- NL NL224458D patent/NL224458A/xx unknown
- NL NL231940D patent/NL231940A/xx unknown
- NL NL112167D patent/NL112167C/xx active
- NL NL235480D patent/NL235480A/xx unknown
1956
- 1956-05-15 DE DES48725A patent/DE1085613B/de active Pending
1957
- 1957-02-05 DE DES52207A patent/DE1279848B/de active Pending
- 1957-05-02 FR FR1174436D patent/FR1174436A/fr not_active Expired
- 1957-05-07 US US657631A patent/US2898528A/en not_active Expired - Lifetime
- 1957-05-07 CH CH360732D patent/CH360732A/de unknown
- 1957-05-15 GB GB15439/57A patent/GB846744A/en not_active Expired
- 1957-11-08 DE DES55807A patent/DE1279849B/de active Pending
1958
- 1958-01-22 SE SE557/58A patent/SE323146B/xx unknown
- 1958-01-29 US US711967A patent/US2959501A/en not_active Expired - Lifetime
- 1958-01-29 CH CH5524458A patent/CH365800A/de unknown
- 1958-02-04 GB GB3667/58A patent/GB865370A/en not_active Expired
- 1958-02-19 DE DES57002A patent/DE1282792B/de active Pending
- 1958-09-25 NO NO129344A patent/NO120536B/no unknown
- 1958-10-17 SE SE9648/58A patent/SE323147B/xx unknown
- 1958-10-24 US US769295A patent/US2937113A/en not_active Expired - Lifetime
- 1958-10-29 GB GB34670/58A patent/GB866376A/en not_active Expired
- 1958-11-01 CH CH6568958A patent/CH365801A/de unknown
1959
- 1959-02-13 CH CH6954959A patent/CH365802A/de unknown
- 1959-02-14 SE SE01459/59A patent/SE336845B/xx unknown
- 1959-02-18 GB GB5666/59A patent/GB903334A/en not_active Expired
- 1959-02-18 US US794001A patent/US2974074A/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
CH365801A (de)	1962-11-30
US2959501A (en)	1960-11-08
DE1279849B (de)	1968-10-10
DE1279848B (de)	1968-10-10
SE323147B (de)	1970-04-27
DE1282792B (de)	1968-11-14
NL112317C (de)
NO120536B (de)	1970-11-02
CH365800A (de)	1962-11-30
GB846744A (en)	1960-08-31
NL107648C (de)
FR1174436A (fr)	1959-03-11
US2974074A (en)	1961-03-07
NL224458A (de)
GB866376A (en)	1961-04-26
NL235480A (de)
SE323146B (de)	1970-04-27
NL112167C (de)
US2937113A (en)	1960-05-17
NL231940A (de)
GB865370A (en)	1961-04-12
NL216614A (de)
DE1085613B (de)	1960-07-21
GB903334A (en)	1962-08-15
US2898528A (en)	1959-08-04
CH360732A (de)	1962-03-15
SE336845B (de)	1971-07-19

Publication	Publication Date	Title
CH365802A (de)	1962-11-30	Verfahren zur grossflächigen Kontaktierung eines Siliziumkörpers
CH369223A (de)	1963-05-15	Verfahren und Einrichtung zur Materialbearbeitung mittels eines Ladungsträgerstrahles
CH330205A (de)	1958-05-31	Verfahren zum Ziehen eines stabförmigen kristallinen Körpers, vorzugsweise Halbleiterkörpers
AT245040B (de)	1966-02-10	Verfahren zum Herstellen eines einkristallinen Halbleiterkörpers
CH374868A (de)	1964-01-31	Verfahren zum elektrolytischen Ätzen eines Halbleiterkörpers mit p-n-Übergang
CH425735A (de)	1966-12-15	Verfahren zum Umschmelzen eines stabförmigen Körpers
CH367593A (de)	1963-02-28	Verfahren zur Herstellung eines Ferrocitratkomplexes
CH347580A (de)	1960-07-15	Verfahren zum Anbringen einer Elektrode auf einem halbleitenden Körper
CH375799A (de)	1964-03-15	Verfahren zur Herstellung eines Halbleiterkörpers
CH408285A (de)	1966-02-28	Verfahren zum Konservieren eines Impfstoffes
AT197436B (de)	1958-04-25	Verfahren zum Anbringen eines Kontaktes auf Silizium
CH394398A (de)	1965-06-30	Verfahren zum Dotieren eines Siliziumkristalls
AT199702B (de)	1958-09-25	Verfahren zum elektrolytischen Ätzen eines einkristallinen Halbleiterkörpers mit p-n-Übergang
CH421609A (de)	1966-09-30	Verfahren zur Herstellung eines Ungeziefervertilgungsmittels
CH370529A (de)	1963-07-15	Verfahren zur Behandlung eines keramischen Giessrohrs
CH389100A (de)	1965-03-15	Verfahren zum Kontaktieren eines Halbleiterkörpers und danach hergestellte Halbleiteranordnung
AT199226B (de)	1958-08-25	Verfahren zur Herstellung eines halbleitenden Elektrodensystems
CH360320A (de)	1962-02-15	Verfahren zum Lackieren eines Gegenstandes mit poröser Oberfläche
AT193139B (de)	1957-11-25	Verfahren zur Schwefelerzröstung
AT192744B (de)	1957-10-25	Verfahren zum Konservieren
AT196558B (de)	1958-03-25	Verfahren zur Gewinnung eines den Winterschlaf bewirkenden Stoffes
AT199462B (de)	1958-09-10	Verfahren zum Auftragsschweißen
CH334815A (de)	1958-12-15	Verfahren zur Behandlung der Oberfläche eines Halbleitkörpers
CH378333A (de)	1964-06-15	Verfahren zur Herstellung eines Bis-triazinylamino-stilbens
AT196426B (de)	1958-03-25	Verfahren zur Herstellung eines Düngemittels