CA2061499A1 - Methode d'imagerie pour la fabrication de microdispositifs - Google Patents

Methode d'imagerie pour la fabrication de microdispositifs

Info

Publication number
CA2061499A1
CA2061499A1 CA2061499A CA2061499A CA2061499A1 CA 2061499 A1 CA2061499 A1 CA 2061499A1 CA 2061499 A CA2061499 A CA 2061499A CA 2061499 A CA2061499 A CA 2061499A CA 2061499 A1 CA2061499 A1 CA 2061499A1
Authority
CA
Canada
Prior art keywords
imaging method
microdevices
manufacture
directions
center
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2061499A
Other languages
English (en)
Other versions
CA2061499C (fr
Inventor
Akiyoshi Suzuki
Miyoko Noguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=26366769&utm_source=***_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=CA2061499(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from JP3028631A external-priority patent/JP2633091B2/ja
Priority claimed from JP3128446A external-priority patent/JP2890892B2/ja
Application filed by Individual filed Critical Individual
Priority to CA002216296A priority Critical patent/CA2216296C/fr
Publication of CA2061499A1 publication Critical patent/CA2061499A1/fr
Application granted granted Critical
Publication of CA2061499C publication Critical patent/CA2061499C/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/7005—Production of exposure light, i.e. light sources by multiple sources, e.g. light-emitting diodes [LED] or light source arrays
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/701—Off-axis setting using an aperture
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70108—Off-axis setting using a light-guiding element, e.g. diffractive optical elements [DOEs] or light guides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70133—Measurement of illumination distribution, in pupil plane or field plane
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Electron Tubes For Measurement (AREA)
  • Light Receiving Elements (AREA)
  • Micromachines (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Developing Agents For Electrophotography (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Length Measuring Devices By Optical Means (AREA)
CA002061499A 1991-02-22 1992-02-19 Methode d'imagerie pour la fabrication de microdispositifs Expired - Lifetime CA2061499C (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CA002216296A CA2216296C (fr) 1991-02-22 1992-02-19 Methode de formation d'images pour la fabrication de microappareils

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP3028631A JP2633091B2 (ja) 1991-02-22 1991-02-22 像投影方法、回路製造方法及び投影露光装置
JP028631/1991 1991-02-22
JP128446/1991 1991-04-30
JP3128446A JP2890892B2 (ja) 1991-04-30 1991-04-30 露光装置及びそれを用いた素子製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CA002216296A Division CA2216296C (fr) 1991-02-22 1992-02-19 Methode de formation d'images pour la fabrication de microappareils

Publications (2)

Publication Number Publication Date
CA2061499A1 true CA2061499A1 (fr) 1992-08-23
CA2061499C CA2061499C (fr) 1998-02-03

Family

ID=26366769

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002061499A Expired - Lifetime CA2061499C (fr) 1991-02-22 1992-02-19 Methode d'imagerie pour la fabrication de microdispositifs

Country Status (7)

Country Link
US (5) US5305054A (fr)
EP (3) EP1118909A1 (fr)
KR (1) KR960006684B1 (fr)
AT (2) ATE160028T1 (fr)
CA (1) CA2061499C (fr)
DE (2) DE69233508T2 (fr)
SG (1) SG87739A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6856377B2 (en) 2000-08-11 2005-02-15 Nikon Corporation Relay image optical system, and illuminating optical device and exposure system provided with the optical system

Families Citing this family (105)

* Cited by examiner, † Cited by third party
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US7656504B1 (en) 1990-08-21 2010-02-02 Nikon Corporation Projection exposure apparatus with luminous flux distribution
US5638211A (en) 1990-08-21 1997-06-10 Nikon Corporation Method and apparatus for increasing the resolution power of projection lithography exposure system
US6897942B2 (en) * 1990-11-15 2005-05-24 Nikon Corporation Projection exposure apparatus and method
US5719704A (en) 1991-09-11 1998-02-17 Nikon Corporation Projection exposure apparatus
US6885433B2 (en) * 1990-11-15 2005-04-26 Nikon Corporation Projection exposure apparatus and method
US6252647B1 (en) 1990-11-15 2001-06-26 Nikon Corporation Projection exposure apparatus
US6967710B2 (en) * 1990-11-15 2005-11-22 Nikon Corporation Projection exposure apparatus and method
US5305054A (en) 1991-02-22 1994-04-19 Canon Kabushiki Kaisha Imaging method for manufacture of microdevices
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EP0500393A3 (en) 1993-01-27
US6271909B1 (en) 2001-08-07
US20040080736A1 (en) 2004-04-29
DE69222963T2 (de) 1998-03-26
DE69233508D1 (de) 2005-06-16
ATE295555T1 (de) 2005-05-15
EP0783135B1 (fr) 2005-05-11
EP1118909A1 (fr) 2001-07-25
EP0500393B2 (fr) 2005-06-08
CA2061499C (fr) 1998-02-03
EP0783135A1 (fr) 1997-07-09
US6473160B2 (en) 2002-10-29
EP0500393B1 (fr) 1997-11-05
DE69233508T2 (de) 2006-02-02
US20010007495A1 (en) 2001-07-12
US5305054A (en) 1994-04-19
DE69222963D1 (de) 1997-12-11
US20010015797A1 (en) 2001-08-23
EP0500393A2 (fr) 1992-08-26
SG87739A1 (en) 2002-04-16
ATE160028T1 (de) 1997-11-15
DE69222963T3 (de) 2005-12-08
US6654101B2 (en) 2003-11-25
KR960006684B1 (ko) 1996-05-22

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