BRPI1009416A2 - célula solar. - Google Patents
célula solar.Info
- Publication number
- BRPI1009416A2 BRPI1009416A2 BRPI1009416A BRPI1009416A BRPI1009416A2 BR PI1009416 A2 BRPI1009416 A2 BR PI1009416A2 BR PI1009416 A BRPI1009416 A BR PI1009416A BR PI1009416 A BRPI1009416 A BR PI1009416A BR PI1009416 A2 BRPI1009416 A2 BR PI1009416A2
- Authority
- BR
- Brazil
- Prior art keywords
- solar cell
- solar
- cell
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009081023 | 2009-03-30 | ||
PCT/JP2010/055195 WO2010113750A1 (ja) | 2009-03-30 | 2010-03-25 | 太陽電池 |
Publications (1)
Publication Number | Publication Date |
---|---|
BRPI1009416A2 true BRPI1009416A2 (pt) | 2016-03-01 |
Family
ID=42828043
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BRPI1009416A BRPI1009416A2 (pt) | 2009-03-30 | 2010-03-25 | célula solar. |
Country Status (9)
Country | Link |
---|---|
US (1) | US8796539B2 (pt) |
EP (1) | EP2416373B1 (pt) |
JP (1) | JP5383792B2 (pt) |
KR (1) | KR101521326B1 (pt) |
CN (1) | CN102369601B (pt) |
BR (1) | BRPI1009416A2 (pt) |
MY (1) | MY152718A (pt) |
SG (1) | SG175041A1 (pt) |
WO (1) | WO2010113750A1 (pt) |
Families Citing this family (80)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101521326B1 (ko) * | 2009-03-30 | 2015-05-18 | 산요덴키가부시키가이샤 | 태양 전지 |
JP5485060B2 (ja) | 2010-07-28 | 2014-05-07 | 三洋電機株式会社 | 太陽電池の製造方法 |
JP5334926B2 (ja) * | 2010-08-02 | 2013-11-06 | 三洋電機株式会社 | 太陽電池の製造方法 |
JP5388970B2 (ja) * | 2010-08-24 | 2014-01-15 | 三洋電機株式会社 | 太陽電池の製造方法 |
JP5595850B2 (ja) * | 2010-09-27 | 2014-09-24 | 三洋電機株式会社 | 太陽電池の製造方法 |
EP2660873A4 (en) * | 2010-12-29 | 2018-03-28 | Panasonic Intellectual Property Management Co., Ltd. | Method for manufacturing solar cell and solar cell |
WO2012132654A1 (ja) * | 2011-03-25 | 2012-10-04 | 三洋電機株式会社 | 裏面接合型の光電変換素子及び裏面接合型の光電変換素子の製造方法 |
JPWO2012132835A1 (ja) | 2011-03-25 | 2014-07-28 | 三洋電機株式会社 | 太陽電池 |
WO2012132655A1 (ja) * | 2011-03-25 | 2012-10-04 | 三洋電機株式会社 | 裏面接合型の光電変換素子及び裏面接合型の光電変換素子の製造方法 |
WO2012132961A1 (ja) * | 2011-03-25 | 2012-10-04 | 三洋電機株式会社 | 光電変換素子の製造方法 |
WO2012132838A1 (ja) * | 2011-03-25 | 2012-10-04 | 三洋電機株式会社 | 光電変換装置の製造方法 |
WO2012132615A1 (ja) * | 2011-03-25 | 2012-10-04 | 三洋電機株式会社 | 光電変換装置及びその製造方法 |
WO2012132613A1 (ja) * | 2011-03-25 | 2012-10-04 | 三洋電機株式会社 | 光電変換素子の製造方法 |
WO2012132064A1 (ja) * | 2011-03-25 | 2012-10-04 | 三洋電機株式会社 | 光起電力素子 |
WO2012132616A1 (ja) * | 2011-03-25 | 2012-10-04 | 三洋電機株式会社 | 光電変換素子の製造方法 |
JPWO2012132758A1 (ja) * | 2011-03-28 | 2014-07-28 | 三洋電機株式会社 | 光電変換装置及び光電変換装置の製造方法 |
WO2012132836A1 (ja) | 2011-03-28 | 2012-10-04 | 三洋電機株式会社 | 光電変換装置及び光電変換装置の製造方法 |
JPWO2012132834A1 (ja) * | 2011-03-28 | 2014-07-28 | 三洋電機株式会社 | 太陽電池及び太陽電池の製造方法 |
JPWO2012132766A1 (ja) * | 2011-03-28 | 2014-07-28 | 三洋電機株式会社 | 光電変換装置及び光電変換装置の製造方法 |
JP2012204764A (ja) * | 2011-03-28 | 2012-10-22 | Sanyo Electric Co Ltd | 太陽電池及び太陽電池の製造方法 |
EP2693488A4 (en) * | 2011-03-28 | 2014-10-15 | Sanyo Electric Co | PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR THE PRODUCTION THEREOF |
US9012769B2 (en) * | 2011-05-25 | 2015-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
JP2013030615A (ja) * | 2011-07-28 | 2013-02-07 | Sanyo Electric Co Ltd | 太陽電池 |
JP5892584B2 (ja) * | 2011-09-26 | 2016-03-23 | デクセリアルズ株式会社 | 太陽電池モジュール、太陽電池モジュールの製造方法 |
JP5927027B2 (ja) * | 2011-10-05 | 2016-05-25 | 株式会社半導体エネルギー研究所 | 光電変換装置 |
TWI685984B (zh) * | 2011-12-21 | 2020-02-21 | 美商太陽電子公司 | 混合式多晶矽異質接面背接觸電池 |
FR2985608B1 (fr) * | 2012-01-05 | 2016-11-18 | Commissariat Energie Atomique | Cellule photovoltaique et procede de realisation |
JP2013168605A (ja) * | 2012-02-17 | 2013-08-29 | Sharp Corp | 太陽電池の製造方法 |
WO2013133005A1 (ja) * | 2012-03-08 | 2013-09-12 | 三洋電機株式会社 | 半導体装置の製造方法 |
GB2503515A (en) * | 2012-06-29 | 2014-01-01 | Rec Cells Pte Ltd | A rear contact heterojunction solar cell |
KR20140019099A (ko) * | 2012-08-02 | 2014-02-14 | 삼성에스디아이 주식회사 | 광전소자 |
JP6042679B2 (ja) * | 2012-09-26 | 2016-12-14 | シャープ株式会社 | 光電変換素子および光電変換素子の製造方法 |
JP6360471B2 (ja) * | 2013-03-04 | 2018-07-18 | シャープ株式会社 | 光電変換素子、光電変換モジュールおよび太陽光発電システム |
JP2014183073A (ja) * | 2013-03-18 | 2014-09-29 | Sharp Corp | 光電変換素子および光電変換素子の製造方法 |
NL2010496C2 (en) * | 2013-03-21 | 2014-09-24 | Stichting Energie | Solar cell and method for manufacturing such a solar cell. |
JP6284522B2 (ja) * | 2013-03-28 | 2018-02-28 | シャープ株式会社 | 光電変換素子、光電変換モジュールおよび太陽光発電システム |
CN104995742B (zh) * | 2013-03-28 | 2017-03-08 | 夏普株式会社 | 光电转换元件 |
CN104112789B (zh) * | 2013-04-17 | 2016-04-27 | 茂迪股份有限公司 | 太阳能电池及其制造方法 |
JP6206843B2 (ja) * | 2013-09-09 | 2017-10-04 | パナソニックIpマネジメント株式会社 | 太陽電池 |
WO2015060013A1 (ja) * | 2013-10-25 | 2015-04-30 | シャープ株式会社 | 光電変換素子 |
US20160268462A1 (en) * | 2013-10-25 | 2016-09-15 | Sharp Kabushiki Kaisha | Photoelectric conversion element |
JP2015109948A (ja) * | 2013-10-31 | 2015-06-18 | キヤノン株式会社 | 被検体情報取得装置 |
JP2015177175A (ja) * | 2014-03-18 | 2015-10-05 | シャープ株式会社 | 光電変換素子および光電変換素子の製造方法 |
WO2015189878A1 (ja) * | 2014-06-13 | 2015-12-17 | 国立大学法人福島大学 | 太陽電池及びその製造方法 |
JP5957102B2 (ja) * | 2015-01-21 | 2016-07-27 | シャープ株式会社 | 太陽電池の製造方法 |
US10854767B2 (en) * | 2015-03-31 | 2020-12-01 | Kaneka Corporation | Solar cell and method for manufacturing same |
EP3346506B1 (en) * | 2015-08-31 | 2020-04-01 | Sharp Kabushiki Kaisha | Photoelectric conversion element |
CN108352413B (zh) * | 2015-10-25 | 2021-11-02 | 索拉昂德有限公司 | 双面电池制造方法 |
EP3163632A1 (en) * | 2015-11-02 | 2017-05-03 | CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement | Photovoltaic device and method for manufacturing the same |
EP3223318A1 (en) * | 2016-03-23 | 2017-09-27 | Meyer Burger (Germany) AG | Hetero junction photovoltaic cell and method of manufacturing same |
CN109155342A (zh) * | 2016-05-23 | 2019-01-04 | 株式会社钟化 | 太阳能电池及其制造方法、以及太阳能电池面板 |
CN110047965A (zh) * | 2018-01-16 | 2019-07-23 | 福建金石能源有限公司 | 一种新型的背接触异质结电池及其制作方法 |
US11379389B1 (en) | 2018-04-03 | 2022-07-05 | Xilinx, Inc. | Communicating between data processing engines using shared memory |
US11567881B1 (en) | 2018-04-03 | 2023-01-31 | Xilinx, Inc. | Event-based debug, trace, and profile in device with data processing engine array |
US11061673B1 (en) | 2018-04-03 | 2021-07-13 | Xilinx, Inc. | Data selection network for a data processing engine in an integrated circuit |
US10747531B1 (en) | 2018-04-03 | 2020-08-18 | Xilinx, Inc. | Core for a data processing engine in an integrated circuit |
US10866753B2 (en) | 2018-04-03 | 2020-12-15 | Xilinx, Inc. | Data processing engine arrangement in a device |
US10990552B1 (en) | 2018-04-03 | 2021-04-27 | Xilinx, Inc. | Streaming interconnect architecture for data processing engine array |
US11372803B2 (en) | 2018-04-03 | 2022-06-28 | Xilinx, Inc. | Data processing engine tile architecture for an integrated circuit |
US10747690B2 (en) | 2018-04-03 | 2020-08-18 | Xilinx, Inc. | Device with data processing engine array |
US11016822B1 (en) | 2018-04-03 | 2021-05-25 | Xilinx, Inc. | Cascade streaming between data processing engines in an array |
US10635622B2 (en) | 2018-04-03 | 2020-04-28 | Xilinx, Inc. | System-on-chip interface architecture |
US11113223B1 (en) | 2018-04-03 | 2021-09-07 | Xilinx, Inc. | Dual mode interconnect |
US10824584B1 (en) | 2018-04-03 | 2020-11-03 | Xilinx, Inc. | Device with data processing engine array that enables partial reconfiguration |
US10579559B1 (en) | 2018-04-03 | 2020-03-03 | Xilinx, Inc. | Stall logic for a data processing engine in an integrated circuit |
KR102244132B1 (ko) * | 2019-04-29 | 2021-04-23 | 홍익대학교 산학협력단 | 듀얼포토다이오드의 제조방법, 그에 따른 듀얼포토다이오드, 듀얼포토다이오드를 이용한 파장 및 세기 측정방법 |
US10891414B2 (en) | 2019-05-23 | 2021-01-12 | Xilinx, Inc. | Hardware-software design flow for heterogeneous and programmable devices |
US11301295B1 (en) | 2019-05-23 | 2022-04-12 | Xilinx, Inc. | Implementing an application specified as a data flow graph in an array of data processing engines |
US10891132B2 (en) | 2019-05-23 | 2021-01-12 | Xilinx, Inc. | Flow convergence during hardware-software design for heterogeneous and programmable devices |
US11188312B2 (en) | 2019-05-23 | 2021-11-30 | Xilinx, Inc. | Hardware-software design flow with high-level synthesis for heterogeneous and programmable devices |
US10977018B1 (en) | 2019-12-05 | 2021-04-13 | Xilinx, Inc. | Development environment for heterogeneous devices |
CN111799348A (zh) * | 2020-06-10 | 2020-10-20 | 中国科学院微电子研究所 | 一种异质结背接触太阳能电池及其形成方法 |
US11443091B1 (en) | 2020-07-31 | 2022-09-13 | Xilinx, Inc. | Data processing engines with cascade connected cores |
US11496418B1 (en) | 2020-08-25 | 2022-11-08 | Xilinx, Inc. | Packet-based and time-multiplexed network-on-chip |
US11288222B1 (en) | 2020-09-28 | 2022-03-29 | Xilinx, Inc. | Multi-die integrated circuit with data processing engine array |
US11336287B1 (en) | 2021-03-09 | 2022-05-17 | Xilinx, Inc. | Data processing engine array architecture with memory tiles |
US11520717B1 (en) | 2021-03-09 | 2022-12-06 | Xilinx, Inc. | Memory tiles in data processing engine array |
CN113964216B (zh) * | 2021-09-22 | 2023-10-27 | 泰州隆基乐叶光伏科技有限公司 | 一种背接触电池及其制作方法 |
CN113921625B (zh) * | 2021-09-30 | 2023-10-27 | 泰州隆基乐叶光伏科技有限公司 | 一种背接触电池及其制作方法 |
US11848670B2 (en) | 2022-04-15 | 2023-12-19 | Xilinx, Inc. | Multiple partitions in a data processing array |
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JP2984537B2 (ja) * | 1994-03-25 | 1999-11-29 | キヤノン株式会社 | 光起電力素子 |
CN1135635C (zh) * | 1994-03-25 | 2004-01-21 | 阿莫科/恩龙太阳公司 | 增强光电器件和电子器件的光和电特性的等离子淀积工艺 |
JP3753605B2 (ja) * | 2000-11-01 | 2006-03-08 | シャープ株式会社 | 太陽電池およびその製造方法 |
EP1650812B2 (en) * | 2003-07-24 | 2019-10-23 | Kaneka Corporation | Method for making a silicon based thin film solar cell |
JP4155899B2 (ja) * | 2003-09-24 | 2008-09-24 | 三洋電機株式会社 | 光起電力素子の製造方法 |
EP1519422B1 (en) * | 2003-09-24 | 2018-05-16 | Panasonic Intellectual Property Management Co., Ltd. | Photovoltaic cell and its fabrication method |
JP3998619B2 (ja) | 2003-09-24 | 2007-10-31 | 三洋電機株式会社 | 光起電力素子およびその製造方法 |
JP2006324590A (ja) * | 2005-05-20 | 2006-11-30 | Sharp Corp | 裏面電極型太陽電池とその製造方法 |
DE102005025125B4 (de) * | 2005-05-29 | 2008-05-08 | Hahn-Meitner-Institut Berlin Gmbh | Verfahren zur Herstellung einer einseitig kontaktierten Solarzelle und einseitig kontaktierte Solarzelle |
EP2239788A4 (en) * | 2008-01-30 | 2017-07-12 | Kyocera Corporation | Solar battery element and solar battery element manufacturing method |
KR101521326B1 (ko) * | 2009-03-30 | 2015-05-18 | 산요덴키가부시키가이샤 | 태양 전지 |
-
2010
- 2010-03-25 KR KR1020117022863A patent/KR101521326B1/ko active IP Right Grant
- 2010-03-25 SG SG2011072071A patent/SG175041A1/en unknown
- 2010-03-25 BR BRPI1009416A patent/BRPI1009416A2/pt not_active IP Right Cessation
- 2010-03-25 JP JP2011507126A patent/JP5383792B2/ja not_active Expired - Fee Related
- 2010-03-25 MY MYPI2011004312 patent/MY152718A/en unknown
- 2010-03-25 CN CN201080014742.XA patent/CN102369601B/zh not_active Expired - Fee Related
- 2010-03-25 EP EP10758523.4A patent/EP2416373B1/en active Active
- 2010-03-25 WO PCT/JP2010/055195 patent/WO2010113750A1/ja active Application Filing
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2011
- 2011-09-27 US US13/246,021 patent/US8796539B2/en not_active Expired - Fee Related
Also Published As
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---|---|
EP2416373A1 (en) | 2012-02-08 |
JPWO2010113750A1 (ja) | 2012-10-11 |
KR20120003871A (ko) | 2012-01-11 |
SG175041A1 (en) | 2011-11-28 |
EP2416373A4 (en) | 2016-11-02 |
US8796539B2 (en) | 2014-08-05 |
CN102369601B (zh) | 2015-04-29 |
JP5383792B2 (ja) | 2014-01-08 |
WO2010113750A1 (ja) | 2010-10-07 |
KR101521326B1 (ko) | 2015-05-18 |
US20120012179A1 (en) | 2012-01-19 |
EP2416373B1 (en) | 2019-12-25 |
MY152718A (en) | 2014-11-28 |
CN102369601A (zh) | 2012-03-07 |
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