BR9807551A - Circuito integrado para uso em um rádio de transceptor digital, circuito amplificador de rádio receptor, circuito misturador de rádio frequência, telefone móvel, rádio transceptor digital, processo para fabricação de um circuito integrado de rádio transceptor digital, e , rádio transceptor. - Google Patents

Circuito integrado para uso em um rádio de transceptor digital, circuito amplificador de rádio receptor, circuito misturador de rádio frequência, telefone móvel, rádio transceptor digital, processo para fabricação de um circuito integrado de rádio transceptor digital, e , rádio transceptor.

Info

Publication number
BR9807551A
BR9807551A BR9807551-9A BR9807551A BR9807551A BR 9807551 A BR9807551 A BR 9807551A BR 9807551 A BR9807551 A BR 9807551A BR 9807551 A BR9807551 A BR 9807551A
Authority
BR
Brazil
Prior art keywords
radio
digital
transceiver
integrated circuit
circuit
Prior art date
Application number
BR9807551-9A
Other languages
English (en)
Inventor
Andrej Litwin
Sven Erik Mattisson
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Publication of BR9807551A publication Critical patent/BR9807551A/pt

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06—Receivers
    • H04B1/16—Circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Signal Processing (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Amplifiers (AREA)
  • Transceivers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
  • Executing Machine-Instructions (AREA)
  • Mobile Radio Communication Systems (AREA)

Abstract

"CIRCUITO INTEGRADO PARA USO EM UM RáDIO TRANSCEPTOR DIGITAL, CIRCUITO AMPLIFICADOR DE RáDIO RECEPTOR, CIRCUITO MISTURADOR DE RáDIO FREQuêNCIA, TELEFONE MóVEL, RáDIO TRANSCEPTOR DIGITAL, PROCESSO PARA FABRICAçãO DE UM CIRCUITO INTEGRADO DE RáDIO TRANSCEPTOR DIGITAL, E, RáDIO RECEPTOR". Circuito integrado de rádio transceptor digital inclui transistores MOS com tensões de limiar normais nos circuitos digitais e com tensões de limiar reduzidas em pelo menos alguns dos componentes de RF analógicos. Isto permite que o transceptor seja reduzido em tamanho e peso, sem requerer que o desempenho seja comprometido.
BR9807551-9A 1997-02-05 1998-01-26 Circuito integrado para uso em um rádio de transceptor digital, circuito amplificador de rádio receptor, circuito misturador de rádio frequência, telefone móvel, rádio transceptor digital, processo para fabricação de um circuito integrado de rádio transceptor digital, e , rádio transceptor. BR9807551A (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB9702375A GB2322042B (en) 1997-02-05 1997-02-05 Radio architecture
PCT/EP1998/000422 WO1998035386A1 (en) 1997-02-05 1998-01-26 Radio architecture

Publications (1)

Publication Number Publication Date
BR9807551A true BR9807551A (pt) 2000-02-01

Family

ID=10807155

Family Applications (1)

Application Number Title Priority Date Filing Date
BR9807551-9A BR9807551A (pt) 1997-02-05 1998-01-26 Circuito integrado para uso em um rádio de transceptor digital, circuito amplificador de rádio receptor, circuito misturador de rádio frequência, telefone móvel, rádio transceptor digital, processo para fabricação de um circuito integrado de rádio transceptor digital, e , rádio transceptor.

Country Status (21)

Country Link
US (2) US6611680B2 (pt)
EP (3) EP0970523B1 (pt)
JP (1) JP2001516525A (pt)
KR (2) KR100686413B1 (pt)
CN (1) CN1165998C (pt)
AU (1) AU746534B2 (pt)
BR (1) BR9807551A (pt)
CA (1) CA2280128C (pt)
DE (1) DE69839512D1 (pt)
DK (1) DK0970523T3 (pt)
EE (1) EE9900342A (pt)
ES (1) ES2306470T3 (pt)
GB (1) GB2322042B (pt)
HK (1) HK1024098A1 (pt)
ID (1) ID22766A (pt)
MY (1) MY126413A (pt)
NO (1) NO993778L (pt)
PL (1) PL334808A1 (pt)
RU (1) RU2217862C2 (pt)
TR (3) TR200000320T2 (pt)
WO (1) WO1998035386A1 (pt)

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Also Published As

Publication number Publication date
EP1742268A2 (en) 2007-01-10
PL334808A1 (en) 2000-03-13
TR200000320T2 (tr) 2000-05-22
GB9702375D0 (en) 1997-03-26
CN1165998C (zh) 2004-09-08
ES2306470T3 (es) 2008-11-01
KR20000070610A (ko) 2000-11-25
AU6213598A (en) 1998-08-26
TR199901818T2 (xx) 1999-10-21
NO993778L (no) 1999-10-04
US6973290B2 (en) 2005-12-06
EP1742267A3 (en) 2007-08-08
US20030013416A1 (en) 2003-01-16
EE9900342A (et) 2000-02-15
EP0970523A1 (en) 2000-01-12
EP1742268A3 (en) 2007-08-01
AU746534B2 (en) 2002-05-02
RU2217862C2 (ru) 2003-11-27
EP0970523B1 (en) 2008-05-21
CN1246964A (zh) 2000-03-08
MY126413A (en) 2006-09-29
GB2322042A (en) 1998-08-12
KR20050111639A (ko) 2005-11-25
DE69839512D1 (de) 2008-07-03
GB2322042B (en) 2002-02-06
EP1742267A2 (en) 2007-01-10
US6611680B2 (en) 2003-08-26
ID22766A (id) 1999-12-09
HK1024098A1 (en) 2000-09-29
CA2280128A1 (en) 1998-08-13
NO993778D0 (no) 1999-08-04
WO1998035386A1 (en) 1998-08-13
KR100686413B1 (ko) 2007-02-23
US20030211833A1 (en) 2003-11-13
CA2280128C (en) 2008-08-12
DK0970523T3 (da) 2008-09-15
TR200000321T2 (tr) 2000-05-22
JP2001516525A (ja) 2001-09-25

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B07A Application suspended after technical examination (opinion) [chapter 7.1 patent gazette]
B09B Patent application refused [chapter 9.2 patent gazette]

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B09B Patent application refused [chapter 9.2 patent gazette]

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