FI20075275A0 - RF-transkonduktanssituloaste - Google Patents

RF-transkonduktanssituloaste

Info

Publication number
FI20075275A0
FI20075275A0 FI20075275A FI20075275A FI20075275A0 FI 20075275 A0 FI20075275 A0 FI 20075275A0 FI 20075275 A FI20075275 A FI 20075275A FI 20075275 A FI20075275 A FI 20075275A FI 20075275 A0 FI20075275 A0 FI 20075275A0
Authority
FI
Finland
Prior art keywords
transkonduktanssituloaste
Prior art date
Application number
FI20075275A
Other languages
English (en)
Swedish (sv)
Inventor
Pete Sivonen
Ari Vilander
Original Assignee
Nokia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nokia Corp filed Critical Nokia Corp
Priority to FI20075275A priority Critical patent/FI20075275A0/fi
Publication of FI20075275A0 publication Critical patent/FI20075275A0/fi
Priority to US11/826,779 priority patent/US7774019B2/en
Priority to CN2008800124346A priority patent/CN101669289B/zh
Priority to EP08736843.7A priority patent/EP2137828B1/en
Priority to PCT/FI2008/050194 priority patent/WO2008129122A1/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/4508—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using bipolar transistors as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/456—A scaled replica of a transistor being present in an amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45306—Indexing scheme relating to differential amplifiers the common gate stage implemented as dif amp eventually for cascode dif amp
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45352—Indexing scheme relating to differential amplifiers the AAC comprising a combination of a plurality of transistors, e.g. Darlington coupled transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45364—Indexing scheme relating to differential amplifiers the AAC comprising multiple transistors parallel coupled at their gates and sources only, e.g. in a cascode dif amp, only those forming the composite common source transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45554—Indexing scheme relating to differential amplifiers the IC comprising one or more coils

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
FI20075275A 2007-04-19 2007-04-19 RF-transkonduktanssituloaste FI20075275A0 (fi)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FI20075275A FI20075275A0 (fi) 2007-04-19 2007-04-19 RF-transkonduktanssituloaste
US11/826,779 US7774019B2 (en) 2007-04-19 2007-07-18 RF input transconductor stage
CN2008800124346A CN101669289B (zh) 2007-04-19 2008-04-16 Rf输入跨导器级
EP08736843.7A EP2137828B1 (en) 2007-04-19 2008-04-16 An rf input transconductor stage
PCT/FI2008/050194 WO2008129122A1 (en) 2007-04-19 2008-04-16 An rf input transconductor stage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI20075275A FI20075275A0 (fi) 2007-04-19 2007-04-19 RF-transkonduktanssituloaste

Publications (1)

Publication Number Publication Date
FI20075275A0 true FI20075275A0 (fi) 2007-04-19

Family

ID=38009928

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20075275A FI20075275A0 (fi) 2007-04-19 2007-04-19 RF-transkonduktanssituloaste

Country Status (5)

Country Link
US (1) US7774019B2 (fi)
EP (1) EP2137828B1 (fi)
CN (1) CN101669289B (fi)
FI (1) FI20075275A0 (fi)
WO (1) WO2008129122A1 (fi)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8112055B2 (en) * 2008-06-26 2012-02-07 Intel Corporation Calibrating receive chain to reduce second order intermodulation distortion
US8212611B2 (en) * 2010-10-06 2012-07-03 Texas Instruments Incorporated Switching core layout
JP5578070B2 (ja) * 2010-12-24 2014-08-27 ソニー株式会社 全二重伝送回路、及び電子機器
US9025709B2 (en) * 2013-05-30 2015-05-05 Mediatek Inc. Receiver front-end circuit, communication unit and method therefor
EP2913922A1 (en) * 2014-02-28 2015-09-02 Telefonaktiebolaget L M Ericsson (publ) A low noise amplifier circuit
US10972075B2 (en) * 2015-12-11 2021-04-06 GM Global Technology Operations LLC Active quadrature circuits for high frequency applications
WO2018173201A1 (ja) * 2017-03-23 2018-09-27 三菱電機株式会社 電流増幅器
TWI670930B (zh) * 2018-12-18 2019-09-01 財團法人工業技術研究院 無線接收裝置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2322042B (en) * 1997-02-05 2002-02-06 Ericsson Telefon Ab L M Radio architecture
AUPP261898A0 (en) 1998-03-27 1998-04-23 Victoria University Of Technology Dc offset and im2 removal in direct conversion receivers
US6057714A (en) * 1998-05-29 2000-05-02 Conexant Systems, Inc. Double balance differential active ring mixer with current shared active input balun
US6125272A (en) 1998-09-25 2000-09-26 Motorola, Inc. Method and apparatus providing improved intermodulation distortion protection
US6529721B1 (en) * 1999-06-04 2003-03-04 Infineon Technologies North America Corp. Low-noise mixer and method
US6380777B1 (en) * 1999-08-20 2002-04-30 International Business Machinesc Corporation Output driver having controlled slew rate
JP3386019B2 (ja) * 1999-10-27 2003-03-10 日本電気株式会社 ミキサ回路
US6807407B2 (en) * 2000-09-11 2004-10-19 Scientific Components, Inc. Dual double balanced mixer
WO2002084859A1 (en) 2001-04-18 2002-10-24 Nokia Corporation Balanced circuit arrangement and method for linearizing such an arrangement
KR100632690B1 (ko) 2003-12-30 2006-10-11 삼성전자주식회사 아이피투 교정회로
US6992519B2 (en) 2004-02-11 2006-01-31 Nokia Corporation Method and apparatus providing cancellation of second order intermodulation distortion and enhancement of second order intercept point (IIP2) in common source and common emitter transconductance circuits

Also Published As

Publication number Publication date
US20080261553A1 (en) 2008-10-23
EP2137828A1 (en) 2009-12-30
CN101669289B (zh) 2013-07-03
US7774019B2 (en) 2010-08-10
EP2137828B1 (en) 2016-01-06
WO2008129122A1 (en) 2008-10-30
EP2137828A4 (en) 2014-12-03
CN101669289A (zh) 2010-03-10

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Legal Events

Date Code Title Description
FD Application lapsed