BE777627A - Dispositifs semiconducteurs, tels que transistors de puissance et leur procede de fabrication - Google Patents

Dispositifs semiconducteurs, tels que transistors de puissance et leur procede de fabrication

Info

Publication number
BE777627A
BE777627A BE777627A BE777627A BE777627A BE 777627 A BE777627 A BE 777627A BE 777627 A BE777627 A BE 777627A BE 777627 A BE777627 A BE 777627A BE 777627 A BE777627 A BE 777627A
Authority
BE
Belgium
Prior art keywords
manufacturing process
semiconductor devices
power transistors
transistors
power
Prior art date
Application number
BE777627A
Other languages
English (en)
Inventor
D S Jacobson
R A Duclos
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of BE777627A publication Critical patent/BE777627A/fr

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4824Pads with extended contours, e.g. grid structure, branch structure, finger structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234Bipolar junction transistors [BJT]
    • H01L29/66272Silicon vertical transistors
    • H01L29/66295Silicon vertical transistors with main current going through the whole silicon substrate, e.g. power bipolar transistor
    • H01L29/66303Silicon vertical transistors with main current going through the whole silicon substrate, e.g. power bipolar transistor with multi-emitter, e.g. interdigitated, multi-cellular or distributed emitter
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/10251Elemental semiconductors, i.e. Group IV
    • H01L2924/10253Silicon [Si]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1203Rectifying Diode
    • H01L2924/12036PN diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
BE777627A 1971-04-05 1971-12-31 Dispositifs semiconducteurs, tels que transistors de puissance et leur procede de fabrication BE777627A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13122971A 1971-04-05 1971-04-05

Publications (1)

Publication Number Publication Date
BE777627A true BE777627A (fr) 1972-04-17

Family

ID=22448510

Family Applications (1)

Application Number Title Priority Date Filing Date
BE777627A BE777627A (fr) 1971-04-05 1971-12-31 Dispositifs semiconducteurs, tels que transistors de puissance et leur procede de fabrication

Country Status (12)

Country Link
AR (1) AR192233A1 (fr)
AU (1) AU461334B2 (fr)
BE (1) BE777627A (fr)
BR (1) BR7108653D0 (fr)
CA (1) CA934480A (fr)
DE (1) DE2165274A1 (fr)
ES (1) ES397884A1 (fr)
FR (1) FR2131930B1 (fr)
GB (1) GB1322141A (fr)
IT (1) IT946279B (fr)
NL (1) NL7200117A (fr)
SE (1) SE377632B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113394267A (zh) * 2021-06-09 2021-09-14 武汉新芯集成电路制造有限公司 半导体器件及其制造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3571913A (en) * 1968-08-20 1971-03-23 Hewlett Packard Co Method of making ohmic contact to a shallow diffused transistor
DE1958542A1 (de) * 1968-11-22 1970-07-09 Tokyo Shibaura Electric Co Halbleitervorrichtung

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113394267A (zh) * 2021-06-09 2021-09-14 武汉新芯集成电路制造有限公司 半导体器件及其制造方法

Also Published As

Publication number Publication date
FR2131930A1 (fr) 1972-11-17
FR2131930B1 (fr) 1977-06-03
AR192233A1 (es) 1973-02-08
DE2165274A1 (de) 1972-10-12
IT946279B (it) 1973-05-21
ES397884A1 (es) 1975-05-16
BR7108653D0 (pt) 1973-05-15
AU3660271A (en) 1973-06-14
CA934480A (en) 1973-09-25
AU461334B2 (en) 1975-05-22
NL7200117A (fr) 1972-10-09
SE377632B (fr) 1975-07-14
GB1322141A (en) 1973-07-04

Similar Documents

Publication Publication Date Title
BE796460A (fr) Transistor bipolaire et procede de fabrication de celui-ci
FR2325186A1 (fr) Procede de fabrication de transistor mos et structure de transistor resultante
BE790547R (fr) Procede de fabrication de copolymeres
BE785150A (fr) Procede pour la fabrication de dispositifs semiconducteurs
BE766395A (fr) Procede de fabrication du 1,1-difluorethane,
BE791930A (fr) Dispositif electroluminescent et procede pour sa fabrication
BE790289A (fr) Procede de fabrication de zeaxanthine
BE776319A (fr) Dispositif semiconducteur et procede permettant sa fabrication
BE785287A (fr) Procede de fabrication des conducteurs-poutres pour dispositifssemiconducteurs
BE789534A (fr) Procede de fabrication de silanes
BE772314A (fr) Procede de fabrication d'embases de transistors
BE792908A (fr) Procede de fabrication de dispositifs semi-conducteurs
BE803528A (fr) Procede de fabrication de dispositifs semi-conducteurs
BE749281A (fr) Procede de fabrication de laits vegetaux
BE774023A (fr) Procede de fabrication de multifilaments de spandex agglomeres
BE778430A (fr) Procede de fabrication de dispositifs
BE782285A (fr) Dispositif semiconducteur, et procede permettant sa fabrication
BE771841A (fr) Procede de fabrication de copolymeres
BE779780A (fr) Procede de fabrication de vinylchlorosilanes.
BE768643A (fr) Procede de fabrication de gaufrettes semiconductrices ultraminces
BE746114A (fr) Procede de fabrication de poly-beta-alanine
BE777627A (fr) Dispositifs semiconducteurs, tels que transistors de puissance et leur procede de fabrication
CH548374A (fr) Procede de fabrication de cyclo-alcanonoximes.
BE781377A (fr) Procede de fabrication de phenoxyphenols ou de chlorophenoxyphenols
BE802553A (fr) Procede de fabrication de compositions thermo-fusibles et compositions en resultant