GB1322141A - Radio frequency transistor structure and method for making - Google Patents
Radio frequency transistor structure and method for makingInfo
- Publication number
- GB1322141A GB1322141A GB4272A GB4272A GB1322141A GB 1322141 A GB1322141 A GB 1322141A GB 4272 A GB4272 A GB 4272A GB 4272 A GB4272 A GB 4272A GB 1322141 A GB1322141 A GB 1322141A
- Authority
- GB
- United Kingdom
- Prior art keywords
- grid
- emitter
- base
- overlay
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052751 metal Inorganic materials 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 3
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 229910021339 platinum silicide Inorganic materials 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229910052703 rhodium Inorganic materials 0.000 abstract 1
- 239000010948 rhodium Substances 0.000 abstract 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910021332 silicide Inorganic materials 0.000 abstract 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 238000005245 sintering Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
- H01L29/66295—Silicon vertical transistors with main current going through the whole silicon substrate, e.g. power bipolar transistor
- H01L29/66303—Silicon vertical transistors with main current going through the whole silicon substrate, e.g. power bipolar transistor with multi-emitter, e.g. interdigitated, multi-cellular or distributed emitter
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13122971A | 1971-04-05 | 1971-04-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1322141A true GB1322141A (en) | 1973-07-04 |
Family
ID=22448510
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB4272A Expired GB1322141A (en) | 1971-04-05 | 1972-01-03 | Radio frequency transistor structure and method for making |
Country Status (12)
Country | Link |
---|---|
AR (1) | AR192233A1 (fr) |
AU (1) | AU461334B2 (fr) |
BE (1) | BE777627A (fr) |
BR (1) | BR7108653D0 (fr) |
CA (1) | CA934480A (fr) |
DE (1) | DE2165274A1 (fr) |
ES (1) | ES397884A1 (fr) |
FR (1) | FR2131930B1 (fr) |
GB (1) | GB1322141A (fr) |
IT (1) | IT946279B (fr) |
NL (1) | NL7200117A (fr) |
SE (1) | SE377632B (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116759433A (zh) * | 2021-06-09 | 2023-09-15 | 武汉新芯集成电路制造有限公司 | 半导体器件及其制造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3571913A (en) * | 1968-08-20 | 1971-03-23 | Hewlett Packard Co | Method of making ohmic contact to a shallow diffused transistor |
GB1262000A (en) * | 1968-11-22 | 1972-02-02 | Tokyo Shibaura Electric Co | A semiconductor device and a method for manufacturing the same |
-
1971
- 1971-12-08 AU AU36602/71A patent/AU461334B2/en not_active Expired
- 1971-12-08 FR FR7143997A patent/FR2131930B1/fr not_active Expired
- 1971-12-09 CA CA129820A patent/CA934480A/en not_active Expired
- 1971-12-11 ES ES397884A patent/ES397884A1/es not_active Expired
- 1971-12-29 DE DE19712165274 patent/DE2165274A1/de active Pending
- 1971-12-29 BR BR8653/71A patent/BR7108653D0/pt unknown
- 1971-12-31 BE BE777627A patent/BE777627A/fr unknown
-
1972
- 1972-01-03 IT IT19013/72A patent/IT946279B/it active
- 1972-01-03 GB GB4272A patent/GB1322141A/en not_active Expired
- 1972-01-04 AR AR239946A patent/AR192233A1/es active
- 1972-01-04 SE SE7200054A patent/SE377632B/xx unknown
- 1972-01-05 NL NL7200117A patent/NL7200117A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
AU3660271A (en) | 1973-06-14 |
BE777627A (fr) | 1972-04-17 |
FR2131930A1 (fr) | 1972-11-17 |
AR192233A1 (es) | 1973-02-08 |
BR7108653D0 (pt) | 1973-05-15 |
NL7200117A (fr) | 1972-10-09 |
DE2165274A1 (de) | 1972-10-12 |
SE377632B (fr) | 1975-07-14 |
IT946279B (it) | 1973-05-21 |
FR2131930B1 (fr) | 1977-06-03 |
CA934480A (en) | 1973-09-25 |
AU461334B2 (en) | 1975-05-22 |
ES397884A1 (es) | 1975-05-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PCNP | Patent ceased through non-payment of renewal fee |