BE415725A - - Google Patents
Info
- Publication number
- BE415725A BE415725A BE415725DA BE415725A BE 415725 A BE415725 A BE 415725A BE 415725D A BE415725D A BE 415725DA BE 415725 A BE415725 A BE 415725A
- Authority
- BE
- Belgium
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/08—Preparation of the foundation plate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02425—Conductive materials, e.g. metallic silicides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/02444—Carbon, e.g. diamond-like carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02491—Conductive materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02625—Liquid deposition using melted materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Prevention Of Electric Corrosion (AREA)
- Cell Electrode Carriers And Collectors (AREA)
- Secondary Cells (AREA)
- Electrolytic Production Of Metals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE471390X | 1935-06-07 | ||
DE2109879X | 1935-12-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
BE415725A true BE415725A (es) | 1900-01-01 |
Family
ID=32031404
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE415725D BE415725A (es) | 1935-06-07 |
Country Status (8)
Country | Link |
---|---|
US (1) | US2109879A (es) |
AT (1) | AT149626B (es) |
BE (1) | BE415725A (es) |
CH (1) | CH191661A (es) |
DK (1) | DK54032C (es) |
FR (1) | FR807072A (es) |
GB (1) | GB471390A (es) |
NL (1) | NL45637C (es) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE961733C (de) * | 1939-01-17 | 1957-04-11 | Aeg | Verfahren zum Herstellen elektrisch unsymmetrisch leitender Elemente mit einem Halbleiter wie Selen |
BE545512A (es) * | 1939-01-22 | |||
US2524270A (en) * | 1945-09-27 | 1950-10-03 | Sylvania Electric Prod | Selenium rectifier |
US2629672A (en) * | 1949-07-07 | 1953-02-24 | Bell Telephone Labor Inc | Method of making semiconductive translating devices |
DE972120C (de) * | 1950-09-24 | 1959-05-27 | Siemens Ag | Verfahren zur Herstellung eines Selengleichrichters der Freiflaechenbauart |
DE1086822B (de) * | 1952-07-31 | 1960-08-11 | Anna Luise Falkenthal Geb Broe | Fotoelement mit Vorderwandeffekt |
US3013328A (en) * | 1954-10-22 | 1961-12-19 | Gen Electric | Method of forming a conductive film |
US2875103A (en) * | 1956-06-07 | 1959-02-24 | Westinghouse Brake And Sigual | Method of manufacturing selenium rectifiers |
US3226610A (en) * | 1962-03-01 | 1965-12-28 | Jr George G Harman | Constant-current semiconductor device |
-
0
- BE BE415725D patent/BE415725A/xx unknown
- NL NL45637D patent/NL45637C/xx active
-
1936
- 1936-05-26 CH CH191661D patent/CH191661A/de unknown
- 1936-05-30 DK DK54032D patent/DK54032C/da active
- 1936-05-30 AT AT149626D patent/AT149626B/de active
- 1936-06-05 FR FR807072D patent/FR807072A/fr not_active Expired
- 1936-06-06 GB GB15916/36A patent/GB471390A/en not_active Expired
- 1936-12-30 US US118206A patent/US2109879A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CH191661A (de) | 1937-06-30 |
GB471390A (en) | 1937-09-03 |
US2109879A (en) | 1938-03-01 |
FR807072A (fr) | 1937-01-04 |
DK54032C (da) | 1937-12-20 |
AT149626B (de) | 1937-05-10 |
NL45637C (es) | 1900-01-01 |