AU7371898A - Low density film for low dielectric constant applications - Google Patents

Low density film for low dielectric constant applications

Info

Publication number
AU7371898A
AU7371898A AU73718/98A AU7371898A AU7371898A AU 7371898 A AU7371898 A AU 7371898A AU 73718/98 A AU73718/98 A AU 73718/98A AU 7371898 A AU7371898 A AU 7371898A AU 7371898 A AU7371898 A AU 7371898A
Authority
AU
Australia
Prior art keywords
dielectric constant
low
density film
low density
constant applications
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU73718/98A
Other languages
English (en)
Inventor
Mark J. Hampden-Smith
Toivo T. Kodas
Daniel J. Skamser
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DANIEL J SKAMSER
MARK J HAMPDEN SMITH
TOIVO T KODAS
Original Assignee
DANIEL J SKAMSER
MARK J HAMPDEN SMITH
TOIVO T KODAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by DANIEL J SKAMSER, MARK J HAMPDEN SMITH, TOIVO T KODAS filed Critical DANIEL J SKAMSER
Publication of AU7371898A publication Critical patent/AU7371898A/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3694—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer one layer having a composition gradient through its thickness
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/006—Surface treatment of glass, not in the form of fibres or filaments, by coating with materials of composite character
    • C03C17/007—Surface treatment of glass, not in the form of fibres or filaments, by coating with materials of composite character containing a dispersed phase, e.g. particles, fibres or flakes, in a continuous phase
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/006—Surface treatment of glass, not in the form of fibres or filaments, by coating with materials of composite character
    • C03C17/008—Surface treatment of glass, not in the form of fibres or filaments, by coating with materials of composite character comprising a mixture of materials covered by two or more of the groups C03C17/02, C03C17/06, C03C17/22 and C03C17/28
    • C03C17/009—Mixtures of organic and inorganic materials, e.g. ormosils and ormocers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K7/00—Use of ingredients characterised by shape
    • C08K7/22—Expanded, porous or hollow particles
    • C08K7/24—Expanded, porous or hollow particles inorganic
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K7/00—Use of ingredients characterised by shape
    • C08K7/22—Expanded, porous or hollow particles
    • C08K7/24—Expanded, porous or hollow particles inorganic
    • C08K7/26—Silicon- containing compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02186—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing titanium, e.g. TiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/40—Coatings comprising at least one inhomogeneous layer
    • C03C2217/42—Coatings comprising at least one inhomogeneous layer consisting of particles only
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/30—Aspects of methods for coating glass not covered above
    • C03C2218/32—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/30—Aspects of methods for coating glass not covered above
    • C03C2218/32—After-treatment
    • C03C2218/328—Partly or completely removing a coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Composite Materials (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Dispersion Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
AU73718/98A 1997-05-07 1998-05-06 Low density film for low dielectric constant applications Abandoned AU7371898A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US85236297A 1997-05-07 1997-05-07
US08852362 1997-05-07
PCT/US1998/009295 WO1998050945A2 (fr) 1997-05-07 1998-05-06 Film basse densite pour applications a faible constante dielectrique

Publications (1)

Publication Number Publication Date
AU7371898A true AU7371898A (en) 1998-11-27

Family

ID=25313123

Family Applications (1)

Application Number Title Priority Date Filing Date
AU73718/98A Abandoned AU7371898A (en) 1997-05-07 1998-05-06 Low density film for low dielectric constant applications

Country Status (2)

Country Link
AU (1) AU7371898A (fr)
WO (1) WO1998050945A2 (fr)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6469390B2 (en) * 1999-01-26 2002-10-22 Agere Systems Guardian Corp. Device comprising thermally stable, low dielectric constant material
JP3827056B2 (ja) * 1999-03-17 2006-09-27 キヤノンマーケティングジャパン株式会社 層間絶縁膜の形成方法及び半導体装置
JP3600507B2 (ja) 2000-05-18 2004-12-15 キヤノン販売株式会社 半導体装置及びその製造方法
JP3532830B2 (ja) 2000-05-24 2004-05-31 キヤノン販売株式会社 半導体装置及びその製造方法
JP2002009069A (ja) 2000-06-22 2002-01-11 Canon Sales Co Inc 成膜方法
JP3934343B2 (ja) 2000-07-12 2007-06-20 キヤノンマーケティングジャパン株式会社 半導体装置及びその製造方法
US6500752B2 (en) 2000-07-21 2002-12-31 Canon Sales Co., Inc. Semiconductor device and semiconductor device manufacturing method
KR100486333B1 (ko) 2000-07-21 2005-04-29 가부시끼가이샤 한도따이 프로세스 켄큐쇼 반도체 장치 및 그 제조 방법
US6835669B2 (en) 2000-07-21 2004-12-28 Canon Sales Co., Inc. Film forming method, semiconductor device and semiconductor device manufacturing method
JP3545364B2 (ja) 2000-12-19 2004-07-21 キヤノン販売株式会社 半導体装置及びその製造方法
JP2005504433A (ja) * 2001-07-18 2005-02-10 トリコン ホールディングス リミティド 低誘電率層
JP3701626B2 (ja) 2001-12-06 2005-10-05 キヤノン販売株式会社 半導体装置の製造方法
ATE499458T1 (de) * 2002-04-17 2011-03-15 Air Prod & Chem Verfahren zur herstellung einer porösen sioch- schicht
US9061317B2 (en) 2002-04-17 2015-06-23 Air Products And Chemicals, Inc. Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants
JP3859540B2 (ja) 2002-05-14 2006-12-20 松下電器産業株式会社 低誘電率絶縁膜形成用材料
US6825130B2 (en) 2002-12-12 2004-11-30 Asm Japan K.K. CVD of porous dielectric materials
DE102012108704A1 (de) * 2012-09-17 2014-03-20 Osram Opto Semiconductors Gmbh Verfahren zur Fixierung einer matrixfreien elektrophoretisch abgeschiedenen Schicht auf einem Halbleiterchip und strahlungsemittierendes Halbleiterbauelement
JP2020527626A (ja) 2017-07-20 2020-09-10 サウジ アラビアン オイル カンパニー 表面改質を使用するコンデンセートバンキングの緩和
EP3914667A1 (fr) 2019-01-23 2021-12-01 Saudi Arabian Oil Company Atténuation formation de condensat et de banc d'eau à l'aide de nanoparticules fonctionnalisées
JP2022096300A (ja) * 2020-12-17 2022-06-29 積水化成品工業株式会社 半導体部材用樹脂組成物に用いる中空樹脂粒子

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4865875A (en) * 1986-02-28 1989-09-12 Digital Equipment Corporation Micro-electronics devices and methods of manufacturing same
US4849284A (en) * 1987-02-17 1989-07-18 Rogers Corporation Electrical substrate material
US5055342A (en) * 1990-02-16 1991-10-08 International Business Machines Corporation Fluorinated polymeric composition, fabrication thereof and use thereof
US5354611A (en) * 1990-02-21 1994-10-11 Rogers Corporation Dielectric composite
JPH0697298A (ja) * 1992-09-14 1994-04-08 Fujitsu Ltd 半導体装置の絶縁膜の形成方法
JP2886432B2 (ja) * 1992-12-29 1999-04-26 インターナショナル・ビジネス・マシーンズ・コーポレイション フッ素化重合体組成物
JP3567494B2 (ja) * 1993-08-27 2004-09-22 旭硝子株式会社 含フッ素溶媒に分散されてなるオルガノゾルからなるコーティング剤
US5835987A (en) * 1995-10-31 1998-11-10 Micron Technology, Inc. Reduced RC delay between adjacent substrate wiring lines
US5801092A (en) * 1997-09-04 1998-09-01 Ayers; Michael R. Method of making two-component nanospheres and their use as a low dielectric constant material for semiconductor devices

Also Published As

Publication number Publication date
WO1998050945A2 (fr) 1998-11-12
WO1998050945A3 (fr) 1999-03-11

Similar Documents

Publication Publication Date Title
AU7371898A (en) Low density film for low dielectric constant applications
AU1818195A (en) Porous film
AU3545395A (en) Paper-like film
AU3856297A (en) Polymeric film
AU6656598A (en) Methods and apparatus for forming a high dielectric film and the dielectric filmformed thereby
AU2249497A (en) Metallized film capacitor
AU4472796A (en) Metallized film for electrical capacitors
EP0886335A3 (fr) Guide d'onde diélectrique
AU5842998A (en) Polymeric films
AU2203097A (en) Metallized film structure
AU5843298A (en) Polymeric films
AU1637095A (en) Polymeric film
AU6301198A (en) Thin films
AU3165699A (en) Compact projector
AU9426698A (en) Film packaging
EP0959151A3 (fr) Dispositif pour la fabrication des couches minces
AU5842898A (en) Polymeric films
AU5843098A (en) Polymeric films
AU2572799A (en) Solvent systems for low dielectric constant polymeric materials
AU8034698A (en) Storage medium having electronic circuits
AU5843198A (en) Polymeric films
AU6612696A (en) Expandable multi media terminal unit
AU2652797A (en) Dielectric thin film element and method for manufacturing the same
AUPM651894A0 (en) Film feeder
AU7674198A (en) Laminating film

Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase